WO2006059803A1 - 位相差電子顕微鏡用位相板及びその製造方法並びに位相差電子顕微鏡 - Google Patents
位相差電子顕微鏡用位相板及びその製造方法並びに位相差電子顕微鏡 Download PDFInfo
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- WO2006059803A1 WO2006059803A1 PCT/JP2005/022595 JP2005022595W WO2006059803A1 WO 2006059803 A1 WO2006059803 A1 WO 2006059803A1 JP 2005022595 W JP2005022595 W JP 2005022595W WO 2006059803 A1 WO2006059803 A1 WO 2006059803A1
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- Prior art keywords
- phase
- phase plate
- electron microscope
- contrast
- plate
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 33
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims description 22
- 238000010894 electron beam technology Methods 0.000 claims description 17
- 238000001771 vacuum deposition Methods 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 17
- 101710205482 Nuclear factor 1 A-type Proteins 0.000 description 21
- 101710170464 Nuclear factor 1 B-type Proteins 0.000 description 21
- 102100022162 Nuclear factor 1 C-type Human genes 0.000 description 21
- 101710113455 Nuclear factor 1 C-type Proteins 0.000 description 21
- 101710140810 Nuclear factor 1 X-type Proteins 0.000 description 21
- 239000013311 covalent triazine framework Substances 0.000 description 21
- 239000004020 conductor Substances 0.000 description 9
- 230000001133 acceleration Effects 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 238000001493 electron microscopy Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 239000012472 biological sample Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000004516 long-range potential Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 239000010938 white gold Substances 0.000 description 1
- 229910000832 white gold Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/263—Contrast, resolution or power of penetration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/2614—Holography or phase contrast, phase related imaging in general, e.g. phase plates
Definitions
- Phase plate for phase contrast electron microscope manufacturing method thereof, and phase contrast electron microscope
- the invention of this application relates to a phase plate for a phase contrast electron microscope, a manufacturing method thereof, and a phase contrast electron microscope. More specifically, the invention of this application relates to a phase plate for a phase contrast electron microscope that completely prevents the lens effect associated with charging and can be applied to the field of materials science, a manufacturing method thereof, and a phase contrast electron microscope. is there. Background art
- phase contrast electron microscope that converts a phase difference generated in an electron beam transmitted through a sample into an intensity change and images it.
- This phase contrast electron microscope has a problem of charging the phase plate. Therefore, conventionally, a carbon thin film that is relatively difficult to be charged has been used as a phase plate. However, even if a carbon thin film is used, contamination of the phase plate by an electron beam cannot be avoided.
- the phase plate is irradiated with an electron beam for a long time just before use (Japanese Patent Laid-Open No. 20 0 1 -2 7 3 8 6 6), heating the phase plate (J. Faget, MM Fagot, J. Ferre and C.
- phase contrast electron microscope In a phase contrast electron microscope, when a conductive material is used for the phase plate, charging of the phase plate is not caused by the phase plate itself, but is caused by exogenous insulating dirt that gets mixed in the phase plate manufacturing process. Has been known for a long time. Of the dirt, those derived from organic substances evaporate to some extent in vacuum, but those derived from inorganic substances and metal oxides are not necessarily in vacuum and always remain a cause of charging. Many efforts have been made in the past to eliminate non-volatile insulating contamination and create a completely clean phase plate, but it has not been successful. This is because fine dirt is unavoidably attached to all of the steps of peeling from the substrate and transferring the phase plate, which is a free thin film, to the electron microscope grid (phase plate support).
- the invention of this application was made in view of the circumstances as described above, and is based on the recognition that it is impossible to prevent the phase plate from being charged. It is an object of the present invention to provide a phase plate for a phase contrast electron microscope that can be applied to the present invention, a method for manufacturing the phase plate, and a phase contrast electron microscope.
- the invention of this application is to solve the above problems. First, it has a phase plate main body and a phase plate support that carries the phase plate, and is arranged in an electron path that passes through an objective lens of an electron microscope.
- phase plate for a phase contrast electron microscope wherein the phase plate body is supported on a phase plate support having an opening so as to cover at least a part of the opening, and the core phase plate
- phase plate for a phase-contrast electron microscope comprising a conductive shield thin film that covers the periphery including both the upper and lower surfaces.
- the phase difference electron microscope phase characterized in that carbon, beryllium, aluminum, silicon, or an alloy thereof is used as the core phase plate material.
- the core phase plate material Provide a board.
- a phase for a phase contrast electron microscope characterized in that a carbon, gold, silver, or platinum group is used as the conductive shield thin film material.
- the phase plate main body has a circular planar shape, and a perfect circular electron transmission hole is formed in a central portion serving as an electron path.
- a phase plate for a phase-contrast electron microscope characterized in that is controlled so as to shift the phase of electrons by ⁇ -2.
- the phase plate main body has a substantially semicircular planar shape, and the film thickness is controlled so as to shift the phase of electrons by ⁇ .
- a phase plate for a phase-contrast electron microscope is provided.
- the present invention provides a phase contrast electron microscope comprising the phase plate for a phase contrast electron microscope according to any one of the first to sixth aspects.
- the phase plate support having an opening covers at least a part of the opening.
- a phase shield body is fabricated by covering the core phase plate and the grid, including the upper and lower surfaces, with a conductive shield thin film.
- the conductive shield thin film is formed using a Joule thermal vacuum deposition method, an electron beam vacuum deposition method, an ion sputtering method, or a plasma CVD method.
- a method for producing a phase plate for a phase contrast electron microscope is provided.
- the lens effect accompanying charging of the phase plate for a phase contrast electron microscope can be completely prevented, and various types of phase contrast electrons such as the Zernike phase difference method and the differential interference method can be used.
- phase contrast electrons such as the Zernike phase difference method and the differential interference method.
- Figs. 1 (a) and (b) are cross-sectional views schematically showing an embodiment of the phase difference electron microscope phase plate according to the invention of this application.
- (A) is a Zernike phase plate and
- (b) is a Hilve. This is a differential phase plate.
- 2 (a) and 2 (b) are cross-sectional views showing examples of shapes and dimensions of typical conventional Zernike phase plates and Hilbert differential phase plates used in a 10 O k V phase-contrast electron microscope, respectively. .
- FIGS. 3 (a) and 3 (b) are cross-sectional views showing examples of the shapes and dimensions of the Zernike phase plate and the Hilbert differential phase plate according to the invention of this application used in a 30 O k V phase-contrast electron microscope, respectively. .
- Figure 4 shows the contrast transfer function (absolute value display) of the normal method (solid line) and the phase difference method (dashed line).
- the dotted line shows the contrast transfer function (absolute value display) for the charged phase plate. Yes.
- FIGS. 5 (a) and 5 (b) are diagrams showing the charging characteristics of a conventional single-layer carbon film Zernike phase plate that is not antistatic and the relationship between CTF phase shift and spatial frequency.
- FIGS. 6 (a) and 6 (b) are diagrams showing the charging characteristics of the Zernike phase plate according to the invention of this application and the relationship between the CTF phase shift and one spatial frequency, respectively.
- FIGS. 1 (a) and 1 (b) are cross-sectional views schematically showing an embodiment of a phase difference electron microscope phase plate according to the invention of this application.
- phase plate (10) shown in Fig. 1 (a) is described.
- This phase plate (10) is called a Zernike phase plate, and the phase plate body (11) and the grid (which is the phase plate support) 12) and is disposed in the electron path that has passed through the objective lens of the phase contrast electron microscope.
- This phase plate (10) is configured to shift the phase of electrons by two.
- the phase plate body (11) is composed of a conductive core phase plate (14) carried on a grid (12) having a circular opening (13) and conductive shield thin films ( 15)
- a perfect circular through hole is formed in the center of the core phase plate (14), and a conductive shield thin film (15) is also provided on the side wall (16). As a result, a perfect circular electron beam transmission hole (17) is formed.
- the conductive shield thin film is also applied to the grid portion (18), which corresponds to an extension of the core phase plate (14) provided on the grid (12) on which the core phase plate (14) is carried. (15) is provided.
- the grid (12) does not transmit electrons. Therefore, the phase plate body (11) has an electron beam transmission hole (17) in the center, and is basically composed of three layers, and the planar shape is circular.
- the thickness of the phase plate body (1 1) is controlled so as to shift the phase of electrons by 7C / 2.
- the grid (12) is grounded by the grounding member (19).
- phase plate (20) shown in Fig. 1 (b) is described.
- This phase plate (20) is called a Hilpelt differential phase plate, and is similar to the phase plate (10) of Fig. 1 (a).
- the phase plate body (21) includes a substantially semicircular and conductive core phase plate (24) carried by a grid (22) having a circular opening (23), and conductive shields provided on both sides thereof.
- Thin film (2 5) A conductive shield thin film (25) is also provided on the side wall (26) of the core phase plate (14).
- a grid portion (28) corresponding to an extension of the core phase plate (24) provided on the grid (22) on which the core phase plate (24) is carried, and a grid on the left side in the figure. (22) also has a conductive shield film (25) on both sides and side walls. Dalid (22) does not transmit electrons. Therefore, the phase plate body (21) is basically composed of three layers, and the plane shape is substantially semicircular. The thickness of the phase plate body (21) is controlled so as to shift the phase of electrons by ⁇ .
- the grid (22) is grounded by the ground member (29).
- the material of the core phase plates (14) and (24) for example, conductive light element materials such as carbon, beryllium, aluminum, silicon, or alloys thereof can be used. These materials are preferably amorphous which is not easily charged.
- the thickness of the core phase plate (14) is appropriately set depending on the material, the acceleration voltage, and the like. For example, it can be about 10 to 15 nm at a 100 kV acceleration voltage.
- the diameter of the electron beam transmitting hole (17) can be about 0.5 to 1 m.
- the thickness of the core phase plate (24) is appropriately set depending on the material, the acceleration voltage, and the like, but can be set to about 20 to 30 nm at a 100 kV acceleration voltage, for example.
- the conductive shield thin film (15), (25) for example, a material which is not easily oxidized such as carbon, gold, silver or platinum group (ruthenium, rhodium, palladium, osmium, iridium, white gold) can be used. . These materials are also preferably amorphous so that they are not easily charged.
- the thickness of the conductive shield thin film (15) is also appropriately set depending on the material, acceleration voltage, etc., but can be about 2 to 1 Onm.
- the thickness of the conductive shield thin film (25) is also appropriately set depending on the material, the acceleration voltage, etc., but can be about 2 to 1 Onm. It is important that these conductive shield thin films (15) and (25) are formed in the final step of the manufacturing process of the phase plate bodies (11) and (21).
- Phase plate body (11) The total thickness of the phase plate is controlled so that the phase of electrons shifts by 7 tZ 2 as described above. It can be ⁇ 25 nm.
- the diameter of the phase plate body (11) can be about 50 to 100 m.
- the total thickness of the phase plate body (21) is controlled so as to shift the phase of electrons by ⁇ as described above.
- the thickness is set to 30 to 45 nm. be able to.
- the radius of the phase plate body (21) can be about 25 to 50 m.
- conductive materials such as copper and molybdenum can be used.
- the thickness of the grids (13) and (23) can be about 10-50 m.
- the shape of the grids (13) and (23) is typically a ring shape, but is not limited to this.
- Figures 2 (a) and 3 (a) show examples of the shape and dimensions of a typical phase plate (10) used in a 100 kV phase contrast electron microscope and a 300 kV phase contrast electron microscope according to the invention of this application.
- Figures 2 (b) and 3 (b) show the shape and shape of a typical phase plate (20) used in the 100 kV and 300 kV phase contrast electron microscopes according to the invention of this application. An example of dimensions is shown.
- phase plate (10) having the above configuration
- a core phase plate material is deposited on an insulating substrate such as My Force and silicon to the required thickness by methods such as Joule thermal vacuum deposition, electron beam vacuum deposition, ion sputtering, and plasma CVD. Then, an amorphous core phase plate film is formed (deposition step). This is exfoliated in water, for example, and floats on the water surface (exfoliation process). Then, scoop it with a grid (12) made of a conductive material such as copper or molybdenum with a circular opening (13). The entire surface of the opening (13) is covered with a core phase plate film (transfer process).
- a micro through-hole is formed in the core phase plate film and cut out to form the core phase plate (14) supported on the grid (12).
- Drilling process, cutting process the conductive shield material is applied to both sides of the core phase plate (14) supported on the grid (12) and the side wall portion (16) of the through hole by Joule thermal vacuum deposition, electron beam vacuum deposition, The film is formed to the required thickness by a method such as the ion sputtering method or plasma CVD method.
- a phase plate body (11) having an electron beam transmission hole (17) is obtained.
- the grid (12) is grounded by a grounding member (19) such as a conductor.
- phase plate (20) as in the case of manufacturing the phase plate (10), first, the core phase plate material is placed on an insulating substrate such as My force by Joule thermal vacuum deposition, electronic An amorphous core phase plate film is formed by depositing the film to the required thickness using a method such as beam vacuum deposition, ion sputtering, or plasma CVD (deposition process). This is exfoliated in water, for example, and floats on the water surface (exfoliation process). Then, a grid (22) made of a conductive material such as copper or molybdenum having a circular opening (23) is scooped. The entire surface of the opening (23) is covered with a core phase plate film (transfer process).
- a method such as beam vacuum deposition, ion sputtering, or plasma CVD (deposition process).
- phase plate main body (planar shape is almost semicircular) by forming an amorphous conductive shield thin film (25) using the ion sputtering method, plasma CVD method, etc. 21) is obtained.
- the grid (2 2) is grounded by a grounding member (29) such as a conductor.
- the conductive shield thin film (15), (25) covers the rising dirt adhering to the surface, so that the electric charge induced in the dirty part by the electron beam is electrically contained.
- electromagnetic field shielding In other words, the conductor generally prevents the electric field from entering and escaping, and the electric charge trapped in the conductor is neutralized by the ground of the conductor. So This electromagnetic field shielding effect can prevent unnecessary lens effects. In the case of electromagnetic field shielding, high electrical conductivity of the shield object is required.
- phase plate (10), (2 0) the charge of the dirty part does not change rapidly, so the conductive shielding film ( The electrical conductivity of 15) and (25) is not expected to require high performance like metal.
- a phase-contrast electron microscope using the phase plate having excellent characteristics as described above is provided.
- CTF contrast transfer function
- CTF si ⁇ ( ⁇ k 2 ) (1)
- ⁇ is the wavelength of the electron wave
- ⁇ is the focal shift
- k is the spatial frequency.
- Spatial frequency k is included as a variable because CTF is a function defined by the diffraction plane, that is, the focal plane behind the objective lens.
- phase plate for a phase contrast electron microscope of the invention of this application is effective in solving the charging problem.
- the volume resistivity of the used e.g. amorphous carbon film on the phase plate is usually a 4 X 10- 5 ⁇ cm, large enough thousand times than metals such as copper.
- the electrical conductivity is 1 / 100th that of metal.
- the phase change measurement using the phase plate was performed by comparing and measuring the CTF with and without the Zernike phase plate (Figs. 5 (a) and 6 (a)). As described above, this utilizes the fact that the CTF function type is a sine type (sin type) without a phase plate and a cosine type (cos type) with a phase plate (reported in Non-Patent Document 3). ).
- Figures 5 (a) and 5 (b) show the experimental results on the charging characteristics of a conventional single-layer carbon film phase plate. The conditions of the phase plate are as follows.
- Phase plate body material amorphous carbon
- Phase plate thickness 24 nm
- Diameter of electron beam transmission hole 1 / Am
- the phase shift effect of the phase plate can be estimated from the difference in vibration between the two CTFs plotted in Fig. 5 (a). Plotting the phase difference in the radial direction from the vibration without the phase plate (solid line in Fig. 5 (a)) and the vibration with the phase plate (dotted line in Fig. 5 (a)). 5
- the square points shown in (b) are data with a phase plate, and the round points are data without a phase plate.
- the phase difference between the two is indicated by a triangular point. It can be seen that the phase difference should shift to the positive side as it goes to the high frequency side (to the right).
- the CTF with a phase plate behaves in the same way as the CTF (dotted line) of the charged phase plate model in Fig. 4 and causes an additional phase shift.
- FIGs 6 (a) and (b) show the experimental results of the charging characteristics of the Zernike phase plate according to the invention of this application.
- the conditions of the phase plate are as follows.
- Core phase plate material Amorphous carbon
- Conductive shield film material Amorphous carbon
- Diameter of phase plate body 50 / xm
- Phase plate body thickness 24 nm
- Diameter of electron beam transmission hole 1 m
- the phase shift effect of the phase plate can be estimated from the difference in vibration between the two CTFs plotted in Fig. 6 (a). Plotting the phase difference in the radial direction from the vibration without the phase plate (solid line in Fig. 6 (a)) and the vibration with the phase plate (dotted line in Fig. 6 (a)). 6
- the square points shown in (b) are data with a phase plate, and the round points are data without a phase plate.
- the phase difference between the two is indicated by a triangular point.
- the phase difference with and without the phase plate was approximately ⁇ / 2 as indicated by the triangular point in FIG. 6 (b). . Therefore, it was confirmed that the phase plate of the present invention retains the good characteristics of the Zernike phase plate in a wide frequency range.
- the conventional phase plate made of a single-layer carbon film could not eliminate the contamination even if it was carefully made.
- the lens effect associated with the dirt charging is caused by the conductive shield. The fruit was completely suppressed.
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Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05814365A EP1845551A4 (en) | 2004-12-03 | 2005-12-02 | PHASE PLATE FOR A PHASE CONTRAST ELECTRON MICROSCOPE, METHOD OF MANUFACTURING THEREOF, AND PHASE CONTRAST ELECTRONIC MICROSCOPE |
US11/791,964 US20080202918A1 (en) | 2004-12-03 | 2005-12-02 | Phase Plate For Phase-Contrast Electron Microscope, Method For Manufacturing the Same and Phase-Contrast Electron Microscope |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004351902A JP4625317B2 (ja) | 2004-12-03 | 2004-12-03 | 位相差電子顕微鏡用位相板及びその製造方法並びに位相差電子顕微鏡 |
JP2004-351902 | 2004-12-03 |
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WO2006059803A1 true WO2006059803A1 (ja) | 2006-06-08 |
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Family Applications (1)
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PCT/JP2005/022595 WO2006059803A1 (ja) | 2004-12-03 | 2005-12-02 | 位相差電子顕微鏡用位相板及びその製造方法並びに位相差電子顕微鏡 |
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Country | Link |
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US (1) | US20080202918A1 (ja) |
EP (1) | EP1845551A4 (ja) |
JP (1) | JP4625317B2 (ja) |
WO (1) | WO2006059803A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
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US7851757B2 (en) * | 2005-11-04 | 2010-12-14 | Nagayama Ip Holdings, Llc | Phase plate for electron microscope and method for manufacturing same |
DE102006055510B4 (de) * | 2006-11-24 | 2009-05-07 | Ceos Corrected Electron Optical Systems Gmbh | Phasenplatte, Bilderzeugungsverfahren und Elektronenmikroskop |
DE102007007923A1 (de) | 2007-02-14 | 2008-08-21 | Carl Zeiss Nts Gmbh | Phasenschiebendes Element und Teilchenstrahlgerät mit phasenschiebenden Element |
EP2091062A1 (en) | 2008-02-13 | 2009-08-19 | FEI Company | TEM with aberration corrector and phase plate |
EP2131385A1 (en) * | 2008-06-05 | 2009-12-09 | FEI Company | Hybrid phase plate |
US7977633B2 (en) * | 2008-08-27 | 2011-07-12 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E. V. | Phase plate, in particular for an electron microscope |
JP4896106B2 (ja) | 2008-09-30 | 2012-03-14 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡 |
US8785850B2 (en) * | 2010-01-19 | 2014-07-22 | National Research Counsel Of Canada | Charging of a hole-free thin film phase plate |
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JP2012253001A (ja) * | 2011-05-10 | 2012-12-20 | National Institutes Of Natural Sciences | 位相板及びその製造方法、並びに位相差電子顕微鏡 |
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JP6286270B2 (ja) | 2013-04-25 | 2018-02-28 | エフ イー アイ カンパニFei Company | 透過型電子顕微鏡内で位相版を用いる方法 |
DE102013019297A1 (de) | 2013-11-19 | 2015-05-21 | Fei Company | Phasenplatte für ein Transmissionselektronenmikroskop |
JP2016170951A (ja) | 2015-03-12 | 2016-09-23 | 日本電子株式会社 | 位相板およびその製造方法、ならびに電子顕微鏡 |
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EP3474308A1 (en) | 2017-10-17 | 2019-04-24 | Universiteit Antwerpen | Spatial phase manipulation of charged particle beam |
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- 2005-12-02 US US11/791,964 patent/US20080202918A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
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JP4625317B2 (ja) | 2011-02-02 |
EP1845551A4 (en) | 2010-07-28 |
JP2006162805A (ja) | 2006-06-22 |
EP1845551A1 (en) | 2007-10-17 |
US20080202918A1 (en) | 2008-08-28 |
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