Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
  • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
  • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
  • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
  • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
  • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
  • C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/04—Coating on selected surface areas, e.g. using masks
  • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/14—Metallic material, boron or silicon
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/3435—Applying energy to the substrate during sputtering
  • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/3464—Sputtering using more than one target
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
  • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32697—Electrostatic control
  • H01J37/32706—Polarising the substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
  • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
  • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
  • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
  • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
  • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2218/00—Methods for coating glass
  • C03C2218/10—Deposition methods
  • C03C2218/15—Deposition methods from the vapour phase
  • C03C2218/152—Deposition methods from the vapour phase by cvd
  • C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2218/00—Methods for coating glass
  • C03C2218/30—Aspects of methods for coating glass not covered above
  • C03C2218/32—After-treatment
  • C03C2218/328—Partly or completely removing a coating
  • C03C2218/33—Partly or completely removing a coating by etching

Definitions

• the present invention relates to an improvement in a technique for embedding a metal in a recess opening in a surface of an object to be processed such as a semiconductor wafer using plasma sputtering.
• a desired device is manufactured by repeatedly performing various processes such as a film forming process and a pattern etching process on a semiconductor wafer. Due to the demand for further higher integration and miniaturization of semiconductor devices, line widths and hole diameters are becoming increasingly finer! When various dimensions are miniaturized, it is necessary to reduce the electrical resistance of the wiring material and the embedding material. Therefore, there is a tendency to use copper having a very small electric resistance as the wiring material and the embedding material (Japanese Patent Laid-open No. 2000-77365 See the publication). When copper is used as a wiring material and an embedding material, a metal tantalum film or a tantalum nitride film is generally used as an underlying barrier layer in consideration of adhesion and the like.
• a thin seed film made of a copper film is first formed on the entire wafer surface including the entire inner surface of the recess in the plasma sputtering apparatus.
• a copper plating process is performed on the entire wafer surface, and copper is embedded in the entire recess.
• the conventional embedding method will be described with reference to FIG.
• a large number of recesses 2 are formed in the semiconductor wafer S, and these recesses 2 are opened on the wafer surface, that is, on the upper surface of the wafer.
• the recess 2 is a via hole, a through hole, or a groove (trench or Dual Damascene structure). Due to miniaturization of design rules, the aspect ratio of the recess 2 is very large (for example, about 3 to 4), and the width or inner diameter of the recess 2 is as small as about 120 nm, for example.
• a TaN film is formed on the entire surface of the wafer surface and the inner surface of the recess 2 by a plasma sputtering apparatus. And a barrier layer 4 made of a laminated structure of Ta films is formed in advance substantially uniformly (see FIG. 8A).
• a seed film 6 made of a metal film, for example, a thin copper film, is formed on the wafer surface and the inner surface of the recess by a plasma sputtering apparatus (see FIG. 8B). When the seed film 6 is formed, a high frequency voltage noise power is applied to the semiconductor wafer side in order to efficiently draw copper ions.
• metal film 8 made of a copper film on the wafer surface by a ternary copper plating process. Thereafter, excess metal film 8, seed film 6 and barrier layer 4 on the wafer surface are removed by polishing.
• the seed film 6 made of a copper film As shown in FIG. 8 (B), the seed film is hardly attached to the portion of the region B 1 below the side wall of the recess 2. For this reason, if a film formation process is performed for a long time until the seed film 6 having a sufficient thickness is formed in the region B1, an overhang portion 10 is generated in the seed film 6 in the upper end opening of the recess 2 and the opening is opened. The area becomes narrower. Even if the plating process is performed in this state, the recess 2 may not be completely filled and void 11 may be generated.
• An object of the present invention is to provide a technique capable of embedding a metal in a concave portion opened on the surface of an object to be processed without causing defects such as voids.
• Another object of the present invention is to reduce the burden of the plating process that can be performed after embedding. It is in.
• Still another object of the present invention is to reduce the burden of surface polishing treatment that can be performed after embedding and Z or plating treatment.
• the surface and the object to be processed having a recess opening in the surface are mounted on the mounting table disposed in the vacuum processing container.
• Applying and drawing the metal ions into the recesses and depositing the metal ions in the recesses, thereby embedding the metal in the recesses, and the bias power is applied to the surface of the object to be processed by the metal. It is characterized in that the deposition rate of metal deposition caused by ion attraction and the etching rate of sputter etching caused by the plasma are approximately balanced. Film forming method and is provide.
• a plating process After embedding a metal in the recess, a plating process can be performed. Further, after the mesh treatment, a polishing treatment for polishing and flattening the surface can be performed.
• the width or diameter of the recess can be set to lOOnm or less and the aspect ratio can be set to 3 or more.
• the metal may be any one of copper, aluminum, and tungsten.
• the present invention further includes a step of placing a target object having a surface and a recess opening in the surface on a mounting table disposed in the vacuum processing container, and a plasm in the vacuum processing container. And generating a metal ion by sputtering a metal target disposed in the vacuum processing vessel with the plasma, and applying a bias power to the mounting table, thereby causing the metal ion to move into the recess.
• a first film forming step including a step of drawing in and depositing in the concave portion, thereby embedding a metal in the concave portion, and generating plasma in the vacuum processing vessel and disposing it in the vacuum processing vessel.
• Sputtering the metal target sputtered by the plasma to generate metal ions applying a bias power to the mounting table, and drawing the metal ions into the recesses.
• Parts having to be deposited comprising the steps of embedding a metal in the recess by this, a second film forming process including, wherein the The first film-forming process and the second film-forming process are alternately repeated a plurality of times, and the bias power in the first film-forming process attracts the metal ions at the surface of the object to be processed.
• the bias power in the second film-forming step is such that the deposition rate of the metal deposition caused by the etching is much higher than the etching rate of the notch etching caused by the plasma.
• a deposition method characterized in that the deposition rate of the metal deposition caused by the drawing of the metal ions and the etching rate of the sputter etching caused by the plasma are approximately balanced on the surface of To do.
• the repeated film formation step ends with the first film formation step.
• a plating process may be performed.
• a polishing process may be performed to polish the surface and make it flat.
• the object to be processed is a substrate for an interposer that couples IC chips together.
• the induction coil may be formed of a metal film embedded in the concave portion of the object to be processed.
• the metal may be any one of copper, aluminum, and tungsten.
• a processing vessel that can be evacuated, a mounting table for mounting an object to be processed having a surface and a recess opening in the surface, and the processing
• a gas introduction means for introducing a predetermined gas into the container, a plasma generator for generating plasma into the processing container, and a metal target provided in the processing container and to be ionized by the plasma
• the bias power source control unit includes the bias power source.
• the bias power output from the surface of the object is generated by the deposition rate of the metal deposition caused by the metal ion attraction and the plasma. That it is configured to control the magnitude, such as the etching rate of sputter etching is generally balanced, a plasma processing apparatus according to claim Rukoto is provided.
• a processing vessel that can be evacuated, a surface, and an opening on the surface.
• a mounting table for mounting an object to be processed having a recess to be opened; a gas introducing means for introducing a predetermined gas into the processing container; and a plasma generator for generating plasma in the processing container
• a metal target provided in the processing vessel and to be ionized by the plasma, a bias power source for supplying a predetermined bias power to the mounting table, and a bias power source control unit for controlling the bias power source Gasifying the gas introduced into the processing vessel and ionizing the metal target with the plasma to form metal ions; and a deposition rate of metal deposits generated by the drawing of the metal ions; Apply a bias voltage tl so that the etching rate of the sputter etching generated by the plasma is substantially balanced.
• Plasma film forming apparatus is provided, characterized in that it and a device control unit for controlling the whole apparatus to perform the steps of the embed by depositing a metal film in the rece
• the bias power applied to the mounting table is adjusted to adjust the relationship between the deposition rate of the metal film caused by metal ion drawing and the etching rate of sputter etching caused by plasma.
• the concave portion of the object to be processed can be efficiently embedded.
• FIG. 1 is a cross-sectional view showing a configuration of a plasma film forming apparatus according to an embodiment of the present invention.
• FIG. 2 is a graph showing the angle dependency of sputter etching.
• FIG. 3 is a graph showing the relationship between bias power and the film formation rate on the wafer surface.
• FIG. 4 is a partially enlarged cross-sectional view of a target object for explaining a series of steps according to the first embodiment of the method of the present invention.
• FIG. 5 is a graph showing the verticality of metal ions corresponding to different bias powers and process pressures, respectively.
• FIG. 6 is a partially enlarged cross-sectional view of a target object for explaining a series of steps according to a second embodiment of the method of the present invention.
• FIG. 7 is an explanatory diagram for explaining the use of the object to be processed created by the second embodiment of the method of the present invention.
• FIG. 8 is a view showing a conventional embedding process of a recess of a semiconductor wafer. Explanation of symbols
• FIG. 1 is a cross-sectional view showing an example of a plasma film forming apparatus according to the present invention.
• an ICP (Inductively Coupled Plasma) type plasma sputtering apparatus will be described as an example of a plasma film forming apparatus.
• the film forming apparatus 12 has a processing container 14 formed into a cylindrical shape with aluminum or the like, for example.
• the processing vessel 14 is grounded.
• An exhaust port 18 is provided at the bottom 16 of the processing vessel 14.
• a vacuum pump 68 is connected to the exhaust port 18 via a throttle valve 66! [0029]
• a disk-shaped mounting table 20 made of, for example, aluminum is provided.
• an electrostatic chuck 22 for adsorbing and holding the semiconductor wafer S, which is an object to be processed, is installed on the upper surface of the mounting table 20, an electrostatic chuck 22 for adsorbing and holding the semiconductor wafer S, which is an object to be processed, is installed.
• a DC voltage is applied to the electrostatic chuck 22 for attracting the wafer S.
• the mounting table 20 is supported by a column 24 extending downward from the central portion of the lower surface thereof.
• the support 24 penetrates the bottom 16 of the processing container 14 and is connected to an elevating mechanism (not shown). Therefore, the mounting table 20 can be moved up and down by operating the lifting mechanism.
• An extendable metal bellows 26 surrounds the column 24.
• the upper end of the metal bellows 26 is airtightly joined to the lower surface of the mounting table 20, and the lower end of the metal bellows 26 is airtightly joined to the upper surface of the bottom 16.
• the metal bellows 26 allows the mounting table 20 to move up and down while maintaining airtightness in the processing container 14.
• a refrigerant circulation path 28 for flowing a refrigerant for cooling the wafer S is formed on the mounting table 20 .
• the refrigerant is supplied to the refrigerant circulation path 28 via a flow path (not shown) in the support 24 and is discharged from the refrigerant circulation path 28.
• a plurality of, for example, three (only two of them are shown in FIG. 1) support pins 30 stand upward from the bottom 16 of the container.
• a pin insertion hole 32 is formed in the mounting table 20.
• the electrostatic chuck 22 is connected to a bias power source 38 made of a high frequency power source that generates, for example, a 13.56 MHz high frequency via a wiring 36. .
• the bias power output from the noise power source 38 is controlled by a bias power source control unit 40 composed of, for example, a micro computer.
• a high-frequency transmission plate 42 made of a dielectric material such as aluminum nitride is airtightly attached to the ceiling opening of the processing vessel 14 via a seal member 44 such as an O-ring.
• a plasma generator 46 for generating plasma of plasma gas, for example, Ar gas is provided in the processing space 52 in the processing container 14.
• plasma The generator 46 includes an induction coil section 48 provided above the transmission plate 42, and a high frequency power supply 50 of 13.56 MHz, for example, for generating plasma connected to the coil 48.
• a baffle plate 54 made of, for example, aluminum is provided immediately below the transmission plate 42 in order to diffuse a high frequency introduced into the processing container 14 through the transmission plate 42.
• an annular metal target 56 is provided below the baffle plate 54 so as to surround the upper portion of the processing space 52, and the diameter of the metal target 56 decreases as it goes upward.
• the inner peripheral surface of the metal target 56 has the shape of a truncated cone.
• a variable DC power source 58 is connected to the metal target 56.
• the metal target 56 for example, a metal such as metal tantalum or copper can be used.
• the metal target 56 is sputtered by Ar ions in the plasma, thereby releasing metal atoms or metal atomic groups from the metal target 56, which are ionized when passing through the plasma to become metal ions.
• the protective cover 60 is grounded, and the lower part thereof is bent inward and extends to the vicinity of the side part of the mounting table 20.
• a gas inlet 62 for introducing a processing gas into the processing container 14 is provided at the bottom of the processing container 14. The gas is introduced from the gas inlet 62 through a gas control unit 64 including a plasma gas, for example, an Ar gas power gas flow rate controller and a valve.
• Various functional elements of the plasma film forming apparatus 12 specifically, the bias power supply control unit 40, the high frequency power supply 50, the variable DC power supply 58, the gas control unit 64, the throttle valve 66, the vacuum pump 68, etc.
• the device control unit 100 that also has computer power.
• the apparatus control unit 100 controls these functional elements to cause the film forming apparatus 12 to execute the following processing.
• Ar gas is caused to flow through the gas control unit 64 into the processing container 14 that has been evacuated by operating the vacuum pump 68, and the throttle valve 66 is controlled to give a predetermined degree of vacuum inside the processing container 14.
• DC power is applied to the metal target 56 via the variable DC power source 58, and further high frequency power is applied to the induction coil unit 48 via the high frequency power source 50.
• the apparatus control unit 100 also issues a command to the bias power supply control unit 40 and applies a predetermined bias power to the mounting table 20. Then, Ar gas is turned into plasma by the power applied to the metal target 56 and the induction coil section 48. Ar ions in the plasma are metal Colliding with the target 56, the metal target 56 is sputtered. As a result, the metal atoms and metal atomic groups emitted from the metal target 56 are ionized when passing through the plasma to become metal ions. The metal ions are attracted to the mounting table 20 to which a bias power is applied, and are deposited on the wafer S on the mounting table 20.
• the device control unit 100 is created to control each functional element so that a metal film is formed according to a predetermined process recipe, and a storage medium (for example, a node) attached to the device control unit 100
• a storage medium for example, a node
• Each functional element of the film forming apparatus 12 is controlled by executing a control program stored in a disk drive or HDD).
• a control program may be stored in a storage medium such as a floppy (registered trademark) disk (FD), a compact disk (CD) or a flash memory.
• FD floppy (registered trademark) disk
• CD compact disk
• flash memory a storage medium
• Each functional element of the film forming apparatus 12 is controlled by executing a program in which the medium force is also read.
• FIG. 2 is a graph showing the angle dependency of sputter etching
• FIG. 3 is a graph showing the relationship between the bias power and the film formation rate on the wafer surface
• FIG. 4 is a diagram showing each process of the first embodiment.
• the feature of the first embodiment of the method of the present invention is that the deposition rate of the metal film generated by the drawing of metal ions is controlled by controlling the bias power to an appropriate magnitude when performing film formation by plasma sputtering.
• the purpose is to achieve a state in which the etching rate of sputter etching generated by ions derived from plasma gas (for example, Ar ions) is almost balanced.
• plasma gas for example, Ar ions
• the bias power is applied to the “wafer surface (surface of the object to be processed)” that is a plane that is orthogonal to the virtual central axis of the annular metal target 56 and is located at the same height as the entrance opening of the recess.
• Metal film deposition rate and sputter etching rate are set to be approximately balanced Is done.
• the term “wafer surface” is used as a term meaning a portion excluding the inner surface of the concave portion (the side surface and the bottom surface of the concave portion) of the surface to be deposited on the wafer. It was noted that
• the angle of the sputter surface means the normal force of the sputtered surface and the angle formed with the incident direction of ions (specifically Ar ions) incident on the sputtered surface in order to scrape the sputtered surface.
• the angle of the sputter surface at the wafer surface and the bottom surface of the recess is 0 degree, and the angle of the sputter surface at the side surface of the recess is 90 degrees.
• the bias power is set so that the metal deposition rate and the sputter etching rate are approximately balanced (corresponding to the area A2 in FIG. 3).
• substantially balanced means not only when the film formation rate on the wafer surface is “zero”, but also at a film formation rate as low as 3Z10 at most relative to the film formation rate in the area A1 in FIG. This also includes the case where is formed.
• the wafer S is loaded into the processing container 14 via the gate valve 34 of the processing container 14 while the mounting table 20 is lowered, and the wafer S is supported on the support pins 30.
• the mounting table 20 is raised by V, the wafer S on the support pins 30 is supported on the upper surface of the mounting table 20.
• the wafer S is attracted to the upper surface of the mounting table 20 by the electrostatic attraction force by the electrostatic chuck 22.
• the wafer S carried into the processing container 14 is provided with a via hole, a through hole, and a recess 2 (see FIG. 8) such as a Z or groove that opens on the wafer surface.
• a barrier having a laminated structure such as a TaN ZTa film is formed by a sputtering process using a metal Ta as a target by another plasma film forming apparatus having a structure similar to the apparatus shown in FIG. Layer 4 is formed in advance (see FIG. 4A).
• the width of the recess 2 (in the case of a groove) and the diameter (in the case of a hole) are very small, several lOOnm or less, and the aspect ratio is about 5 at the maximum.
• a film forming process is started.
• copper is used as the metal target 56.
• a high frequency voltage is applied to the induction coil section 48 of the plasma generation source 46, and a predetermined bias power is applied to the electrostatic chuck 22 of the mounting table 20 from the bias power source 38.
• a plasma gas such as Ar gas is supplied into the processing container 14 from the gas inlet 62.
• the bias power is set in a region A2 in FIG.
• the bias power is set to a value corresponding to the region A3 slightly lower than the point X1 in FIG. 3 or the point XI, and the metal film (Cu film) Film formation is performed.
• the bias power is 320 to 350 W.
• Only Ar gas is supplied from the gas inlet 62.
• FIG. 4B almost no metal film is deposited on the wafer surface, and the metal film 6 made of Cu film is deposited almost uniformly on the side and bottom surfaces of the recess 2.
• the metal film does not substantially grow on the wafer surface as shown in FIGS. 4 (C) to 4 (F), or While the state in which the metal film 6 grows at a very low deposition rate is maintained, the metal film 6 grows gradually on the side surface of the recess 2 while maintaining the uniformity of the film thickness. At the same time, the metal film 6 gradually grows in the bottom force of the recess 2, and the recess 2 is filled with the metal without generating voids.
• the width or diameter of the recess 2 is very fine, such as several lOOnm or less, the scattered metal 70 scattered by sputtering at the bottom of the recess 2 adheres to the side surface of the bottom of the recess 2. For this reason, the metal film 6 adheres to the side surface of the bottom of the recess 2 where it was difficult to attach the metal film in the conventional method, and the thickness of the side surface of the recess 2 can be made uniform in the depth direction. .
• the metal film 6 adhering to the bottom side surface in the recess 2 protrudes toward the center of the recess 2, the metal film 6 gradually accumulates on the bottom, and thereby the bottom side force is also reduced. The inside will be buried. The reason why the overhang 8 (see FIG. 8) does not occur in the opening of the recess 2 is that the deposition and etching cancel each other.
• the high-frequency power applied to the induction coil section 48 of the plasma generator 46 should be high (5000 to 6000 W).
• the etching rate at the bottom of the recess 2 is higher than the metal deposition rate even if the film forming rate on the wafer surface can be reduced to zero. As a result, the NORA layer 4 that is the base film is damaged, which is not preferable.
• the reason why etching is dominant at this time is that neutral metal atoms can reach the wafer surface and contribute to the deposition, but neutral metal atoms have a low verticality, so they reach the bottom of recess 2. This is because the amount of ions that cause sputtering (Ar ions) at the bottom of the recess 2 is larger than the amount of metal atoms.
• one metal atom (or metal ion) formed by the plasma is ejected (etched) by one plasma ion.
• the perpendicularity of the metal ions to the wafer is somewhat low.
• the pressure in the processing vessel 14 is kept high compared to the conventional film formation method to a low vacuum state (1 to 1 OO mTorr, more preferably 3 to 10 mTorr), and the mean free path of metal ions is shortened. ing. This increases the number of times metal ions collide with plasma ions and lowers the perpendicularity to the wafer.
• FIG. Figure 5 is a graph showing the verticality of metal ions for different bias powers and process pressures.
• the ellipses indicated by A, B, and C indicate the relationship between the amount of metal ions deposited per unit area on the wafer surface and the incident angle.
• the origin O force draws a straight line for each ellipse
• the length to the intersection of the origin O force is the amount of metal ions
• the angle made with the X axis is the incident angle.
• the incident angle when the metal ions are incident perpendicularly to the wafer surface is 0 degree.
• ellipse A corresponds to the case where the film is formed under a bias condition corresponding to region A1 in FIG. 3
• ellipse B corresponds to the case where the process pressure is low vacuum and the film is formed under a bias condition corresponding to region XI.
• Ellipse C is under a bias condition where the process pressure is high vacuum (less than 0.5 mTorr) and corresponds to region XI. This corresponds to the case where a film is formed.
• the straight lines Ll and L2 indicate the metal ions incident on the wafer at the critical angle ⁇ , which is the maximum value of the incident angle of metal ions that can reach the bottom of the recess 2, as shown in the lower part of FIG.
• the straight lines Ll and L2 indicate the metal ions incident on the wafer at the critical angle ⁇ , which is the maximum value of the incident angle of metal ions that can reach the bottom of
• metal ions incident on the wafer S at an angle smaller than the critical angle ⁇ are also deposited on the side and bottom surfaces of the recesses.
• Metal ions incident on the wafer S at an angle larger than the critical angle 0 are deposited only on the side surface of the concave portion, but are preferentially deposited on the upper side of the concave side surface as the incident angle increases. Therefore, in order to form a film efficiently over the entire side surface of the recess, a metal ion having the perpendicularity indicated by the ellipse A is used rather than a metal ion having the perpendicularity indicated by the ellipse C.
• the bias power is not excessively increased so that the barrier layer 4 made of the TaNZTa film is not damaged by sputtering due to ions (Ar ions) in the plasma.
• the plasma deposition apparatus 12 loaded with a copper metal target was made evacuable to another plasma deposition apparatus (barrier layer deposition apparatus) equipped with a tantalum metal target. It is preferable to connect via a transfer chamber. Thus, after the formation of the NORA layer 4, the semiconductor wafer S can be carried into the plasma film forming apparatus 12 without being exposed to the atmosphere.
• the wafer S is taken out from the plasma film forming apparatus 12.
• the wafer S after the film formation process is subjected to a plating process, and the entire upper surface of the wafer S is made of the same metal as the metal film 6 so as to completely fill the recess 72 as shown in FIG.
• a metal film 74 (in this case, a copper film) is formed. Since the recess 72 is shallower than the concave portion 2 to be embedded by the plating process in the conventional example of FIG. 8, it is not necessary to perform a special plating process such as a ternary mask. Embedding can be carried out by easy plating, for example, binary plating with fewer additives.
• the thickness H2 of the metal film 74 formed by the plating process is much thinner than the thickness HI of the metal film 8 shown in FIG. 8 (C).
• the polishing process for removing the excess film can be performed easily and in a short time.
• the first embodiment is effective when the width of the recess 2 (in the case of a groove) or the diameter (in the case of a hole) is very fine, which is several lOOnm or less. However, if the width of the recess is much larger than that, for example, 20 to: about LOO / zm, the film formation under the film formation conditions in the first embodiment and other By combining with film formation under film formation conditions, it becomes possible to embed metal efficiently in the recess.
• FIG. 6 is a partially enlarged cross-sectional view for explaining each step in the second embodiment of the method of the present invention
• FIG. 7 is an explanation for explaining the use of the object processed by the second embodiment of the method of the present invention.
• the object to be processed S2 is formed of, for example, a semiconductor wafer such as a silicon substrate, or a polymer resin such as a polyimide resin.
• the object to be processed S2 is, for example, a substrate of the interposer 84 for interposing between the IC chips 80 when the IC chips 80 are stacked and bonded to each other to achieve communication between the IC chips 80.
• a plurality of concave portions 82 having a large width or diameter are formed in the object to be processed S2, and a metal such as copper is embedded in the concave portions 82.
• the aspect ratio of the recess 82 is, for example, 5 or more and is considerably large.
• the process conditions of the first embodiment with a small film formation rate require a long time for embedding the recess 82, which is practical. Not right. Therefore, in the second embodiment, in order to form a metal film, for example, a copper film, as a seed film on the inner surface including the side surface of the recess 82, the process conditions (bias power) used in the first embodiment and the conventional technique are used. Combined with process conditions (bias power) for the method. [0070] As shown in FIG.
• a metal film 6A made of a copper film as a seed film is formed under the same process conditions as the film forming method by the conventional plasma sputtering as the first film forming step. Form.
• the noise power is set to a value corresponding to the area A1 in FIG. That is, the bias power is set so that the metal deposition rate is much higher than the sputter etching rate on the surface of the object to be processed.
• the metal film 6A is deposited on the bottom surface of the recess 82. The metal film hardly adheres to the lower region B1 on the side surface of the recess 82.
• the second film formation step is then performed as shown in FIG. 6B.
• the same process conditions (bias power) as in the first embodiment are used. That is, in this second film forming step, the bias power is a value corresponding to the area A2 in FIG. 3, for example, the area A3 or the point XI, in other words, the metal deposition rate on the surface of the object to be processed.
• the bias power is set so as to roughly balance the sputter etching rate.
• metal film 6 B made of a copper film is deposited on the inner surface of recess 82 as a seed film.
• the metal film 6A deposited on the bottom of the recess 82 in the first film formation step is struck and scattered by the ions of the plasma, and the scattered metal 70 is in the region B1 on the immediate side. It adheres to and accumulates. Therefore, by performing the second film forming step, the metal films 6A and 6B are deposited on the entire side surface in the recess 82, although they are thin.
• the metal films 6A and 6B that are formed on the side surfaces of the recess 82 by the first and second film forming steps once each are very thin, so this film thickness is increased!
• the first and second film forming steps are alternately repeated a plurality of times (FIGS. 6C and 6D).
• the first film forming process is performed three times and the second film forming process is performed twice.
• the number of each film forming process is not limited to this and is determined in consideration of the throughput. be able to.
• the metal film on the bottom surface of the recess 82 is spattered and spattered, so that the metal film is almost deposited on the bottom surface of the recess 82 immediately after the second film-forming process. There is a possibility that it is in a state of not working. For this reason, the film formation process performed alternately and repeatedly is terminated in the first film formation process as shown in FIG. 6 (E).
• Unnecessary metal film located on the upper surface of the object to be processed S2 in which the recess 82 has been embedded is scraped off by polishing.
• the workpiece S2 is cut along the cross section including the bottom surface of the recess 82.
• the interposer 84 shown in FIG. 7 can be formed.
• a wiring groove may be formed on the surface of the interposer 84, and a metal may be embedded in the groove using the film forming method described above.
• the object to be processed S2 is not limited to the substrate for the interposer 84.
• a spiral groove is formed on the upper surface of the object to be processed, and metal is embedded in the groove using the film forming method according to the first embodiment or the second embodiment described above. It can be done by forming a coil.
• the embedding material is copper, but the present invention is not limited to this.
• other metals such as Al, W, Ti, Ru, and Ta can be used as the embedding material.
• each high-frequency power source is not limited to 13.56 MHz, and other frequencies such as 27. OMHz can be used.
• the inert gas for plasma is not limited to Ar gas, and other inert gases such as He and Ne may be used.
• the object to be processed is not limited to a semiconductor wafer, and may be an LCD substrate, a glass substrate, or the like.

Landscapes

• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Materials Engineering (AREA)
• Organic Chemistry (AREA)
• Mechanical Engineering (AREA)
• Physics & Mathematics (AREA)
• Metallurgy (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Power Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Analytical Chemistry (AREA)
• Plasma & Fusion (AREA)
• Life Sciences & Earth Sciences (AREA)
• General Chemical & Material Sciences (AREA)
• Geochemistry & Mineralogy (AREA)
• Physical Vapour Deposition (AREA)
• Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
• Electrodes Of Semiconductors (AREA)

Priority Applications (2)

Applications Claiming Priority (2)

Publications (1)

Family

ID=36202966

Family Applications (1)

Country Status (5)

Families Citing this family (15)

Citations (4)

Family Cites Families (8)

• 2005
  • 2005-10-18 US US11/577,535 patent/US20080200002A1/en not_active Abandoned
  • 2005-10-18 KR KR1020077008812A patent/KR100904779B1/ko not_active Expired - Fee Related
  • 2005-10-18 WO PCT/JP2005/019120 patent/WO2006043551A1/ja not_active Ceased
  • 2005-10-18 CN CN2005800359070A patent/CN101044259B/zh not_active Expired - Fee Related
  • 2005-10-19 TW TW094136551A patent/TW200622029A/zh not_active IP Right Cessation

Patent Citations (4)

Also Published As

Similar Documents

Legal Events