JP5347868B2 - 載置台構造及びプラズマ成膜装置 - Google Patents
載置台構造及びプラズマ成膜装置 Download PDFInfo
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- JP5347868B2 JP5347868B2 JP2009218381A JP2009218381A JP5347868B2 JP 5347868 B2 JP5347868 B2 JP 5347868B2 JP 2009218381 A JP2009218381 A JP 2009218381A JP 2009218381 A JP2009218381 A JP 2009218381A JP 5347868 B2 JP5347868 B2 JP 5347868B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/358—Inductive energy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Description
プラズマスパッタにより金属膜を形成するための被処理体を載置し、外周側が絶縁用の隙間を隔ててグランド側に接続された保護カバー部材により囲まれた載置台構造において、被処理体をその上面側に載置する載置台本体を電極と兼用させて設けると共に、この載置台本体に高周波電力を供給するようにし、この載置台本体の下方に離間させて絶縁状態で導電性材料よりなるベース台をグランド状態で設け、高周波電力が印加されるホット側とグランド側との間に電力安定用コンデンサ部を設け、この電力安定用コンデンサ部の静電容量を、載置台本体と保護カバー部材との間で形成される浮遊容量の静電容量よりも大きくなるように設定している。
次に、以上のように構成されたプラズマ成膜装置の動作について図4も参照して説明する。図4は載置台構造の載置台の表面側に不要な金属膜が堆積した時の状況を示す部分拡大断面図である。
32 処理容器
42 載置台構造
44 載置台
46 支柱
48 載置台本体(電極)
50 ベース台
52 静電チャック
70 高周波給電ライン
72 バイアス用高周波電源
78 プラズマ発生源
86 金属ターゲット
92 保護カバー部材
94 絶縁用の隙間
108 絶縁部材
120 電力安定用コンデンサ部
126 浮遊容量
128 不要な金属膜
W 半導体ウエハ(被処理体)
Claims (7)
- プラズマスパッタにより金属膜を形成するための被処理体を載置し、外周側が絶縁用の隙間を隔ててグランド側に接続された保護カバー部材により囲まれた載置台構造において、
導電性材料よりなり、前記被処理体をその上面側に載置すると共に電極として兼用される載置台本体と、
前記載置台本体の下方に離間されて配置されると共に前記載置台本体に対して絶縁状態で設けられた導電性材料よりなるベース台と、
前記ベース台を支持すると共にグランド側に接続された支柱と、
前記載置台本体に接続されてバイアス用の高周波電力を供給する高周波給電ラインと、
前記高周波電力が印加されるホット側とグランド側との間に形成された電力安定用コンデンサ部とを備え、
前記電力安定用コンデンサ部の静電容量は、前記載置台本体と前記保護カバー部材との間で形成される浮遊容量の静電容量よりも大きく設定されていることを特徴とする載置台構造。 - 前記電力安定用コンデンサ部は、前記ベース台と前記載置台本体とを絶縁状態で連結して支持している複数本の支持ロッド部材により構成されていることを特徴とする請求項1記載の載置台構造。
- 前記支持ロッド部材が連結される各部分には、それぞれ絶縁部材が介在されていることを特徴とする請求項2記載の載置台構造。
- 前記支持ロッド部材は、導電性材料よりなる細長いネジ部材により形成されていることを特徴とする請求項2又は3記載の載置台構造。
- 前記電力安定用コンデンサ部の静電容量は、前記載置台本体と前記保護カバー部材との間に形成される前記浮遊容量の静電容量の2〜4倍の範囲内の大きさに設定されていることを特徴とする請求項1乃至4のいずれか一項に記載の載置台構造。
- 前記載置台本体の上面には、前記被処理体を吸着するための静電チャックが設けられていることを特徴とする請求項1乃至5のいずれか一項に記載の載置台構造。
- プラズマスパッタにより金属膜を被処理体の表面に形成するプラズマ成膜装置において、
真空引き可能になされた処理容器と、
請求項1乃至6のいずれか一項に記載の載置台構造と、
前記載置台構造の外周側に絶縁用の隙間を隔てて設けられると共にグランド側に接続された保護カバー部材と、
前記処理容器内へ所定のガスを導入するガス導入手段と、
前記処理容器内へプラズマを発生させるためのプラズマ発生源と、
前記金属膜の材料となる金属ターゲットと、
前記金属ターゲットへ前記ガスのイオンを引きつけるための電圧を供給するターゲット用の電源と、
前記載置台構造に対してバイアス用の高周波電力を供給するバイアス用高周波電源と、
を備えたことを特徴とするプラズマ成膜装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009218381A JP5347868B2 (ja) | 2009-09-24 | 2009-09-24 | 載置台構造及びプラズマ成膜装置 |
KR1020127009921A KR101347596B1 (ko) | 2009-09-24 | 2010-09-21 | 재치대 구조체 및 플라즈마 성막 장치 |
PCT/JP2010/066319 WO2011037107A1 (ja) | 2009-09-24 | 2010-09-21 | 載置台構造及びプラズマ成膜装置 |
CN2010800189047A CN102414340A (zh) | 2009-09-24 | 2010-09-21 | 载置台构造以及等离子体成膜装置 |
US13/497,937 US9324600B2 (en) | 2009-09-24 | 2010-09-21 | Mounting table structure and plasma film forming apparatus |
TW099132197A TW201129708A (en) | 2009-09-24 | 2010-09-23 | Structure of mounting table, and plasma film-forming apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2009218381A JP5347868B2 (ja) | 2009-09-24 | 2009-09-24 | 載置台構造及びプラズマ成膜装置 |
Publications (2)
Publication Number | Publication Date |
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JP2011068918A JP2011068918A (ja) | 2011-04-07 |
JP5347868B2 true JP5347868B2 (ja) | 2013-11-20 |
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Country Status (6)
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US (1) | US9324600B2 (ja) |
JP (1) | JP5347868B2 (ja) |
KR (1) | KR101347596B1 (ja) |
CN (1) | CN102414340A (ja) |
TW (1) | TW201129708A (ja) |
WO (1) | WO2011037107A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2014064860A1 (ja) * | 2012-10-22 | 2014-05-01 | キヤノンアネルバ株式会社 | 基板処理装置 |
KR102194915B1 (ko) | 2014-01-13 | 2020-12-28 | 삼성디스플레이 주식회사 | 스퍼터링 장치 및 스퍼터링용 가스 공급관 |
JP6030813B1 (ja) * | 2015-03-25 | 2016-11-24 | 株式会社アルバック | 高周波スパッタリング装置及びスパッタリング方法 |
JP6328089B2 (ja) * | 2015-11-13 | 2018-05-23 | 株式会社日本製鋼所 | プラズマスパッタ装置 |
JP6552429B2 (ja) * | 2016-02-05 | 2019-07-31 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6900469B2 (ja) * | 2017-05-09 | 2021-07-07 | 富士フイルム株式会社 | 成膜装置および圧電膜の成膜方法 |
CN110800096B (zh) * | 2017-10-16 | 2023-07-18 | 日本碍子株式会社 | 静电卡盘 |
JP6465948B1 (ja) * | 2017-11-01 | 2019-02-06 | キヤノントッキ株式会社 | 基板処理装置及び成膜装置 |
KR102312330B1 (ko) * | 2018-09-18 | 2021-10-13 | 주식회사 테스 | 기판지지유닛 |
CN112838040B (zh) * | 2019-11-25 | 2023-10-20 | 中微半导体设备(上海)股份有限公司 | 一种晶圆夹持装置和等离子体处理设备 |
TW202129045A (zh) * | 2019-12-05 | 2021-08-01 | 美商應用材料股份有限公司 | 多陰極沉積系統與方法 |
CN211857976U (zh) * | 2020-04-16 | 2020-11-03 | 北京京东方显示技术有限公司 | 一种显示装置 |
Family Cites Families (16)
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US3763031A (en) * | 1970-10-01 | 1973-10-02 | Cogar Corp | Rf sputtering apparatus |
US4131533A (en) * | 1977-12-30 | 1978-12-26 | International Business Machines Corporation | RF sputtering apparatus having floating anode shield |
JPH03201713A (ja) * | 1989-12-28 | 1991-09-03 | Clarion Co Ltd | 圧電膜製造装置 |
US5478429A (en) | 1993-01-20 | 1995-12-26 | Tokyo Electron Limited | Plasma process apparatus |
JPH06236858A (ja) * | 1993-02-10 | 1994-08-23 | Tokyo Electron Ltd | プラズマ処理装置 |
JP3131865B2 (ja) * | 1994-09-05 | 2001-02-05 | 東京エレクトロン株式会社 | プラズマ成膜装置 |
JP4021601B2 (ja) * | 1999-10-29 | 2007-12-12 | 株式会社東芝 | スパッタ装置および成膜方法 |
JP2006014807A (ja) | 2004-06-30 | 2006-01-19 | Matsushita Electric Ind Co Ltd | 炊飯器 |
WO2006043551A1 (ja) * | 2004-10-19 | 2006-04-27 | Tokyo Electron Limited | プラズマスパッタリングによる成膜方法及び成膜装置 |
JP2006148075A (ja) * | 2004-10-19 | 2006-06-08 | Tokyo Electron Ltd | 成膜方法及びプラズマ成膜装置 |
US8221602B2 (en) * | 2006-12-19 | 2012-07-17 | Applied Materials, Inc. | Non-contact process kit |
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JP4887202B2 (ja) | 2007-04-17 | 2012-02-29 | 東京エレクトロン株式会社 | プラズマ処理装置及び高周波電流の短絡回路 |
JP5660753B2 (ja) * | 2007-07-13 | 2015-01-28 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プラズマエッチング用高温カソード |
JP2009182140A (ja) | 2008-01-30 | 2009-08-13 | Tokyo Electron Ltd | 薄膜の形成方法、プラズマ成膜装置及び記憶媒体 |
JP2009187673A (ja) * | 2008-02-01 | 2009-08-20 | Nec Electronics Corp | プラズマ処理装置及び方法 |
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2009
- 2009-09-24 JP JP2009218381A patent/JP5347868B2/ja not_active Expired - Fee Related
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2010
- 2010-09-21 US US13/497,937 patent/US9324600B2/en not_active Expired - Fee Related
- 2010-09-21 CN CN2010800189047A patent/CN102414340A/zh active Pending
- 2010-09-21 WO PCT/JP2010/066319 patent/WO2011037107A1/ja active Application Filing
- 2010-09-21 KR KR1020127009921A patent/KR101347596B1/ko active IP Right Grant
- 2010-09-23 TW TW099132197A patent/TW201129708A/zh unknown
Also Published As
Publication number | Publication date |
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US9324600B2 (en) | 2016-04-26 |
KR101347596B1 (ko) | 2014-01-03 |
KR20120054655A (ko) | 2012-05-30 |
CN102414340A (zh) | 2012-04-11 |
TW201129708A (en) | 2011-09-01 |
WO2011037107A1 (ja) | 2011-03-31 |
JP2011068918A (ja) | 2011-04-07 |
US20130001076A1 (en) | 2013-01-03 |
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