WO2006034946A1 - Resistiv schaltender halbleiterspeicher - Google Patents
Resistiv schaltender halbleiterspeicher Download PDFInfo
- Publication number
- WO2006034946A1 WO2006034946A1 PCT/EP2005/054410 EP2005054410W WO2006034946A1 WO 2006034946 A1 WO2006034946 A1 WO 2006034946A1 EP 2005054410 W EP2005054410 W EP 2005054410W WO 2006034946 A1 WO2006034946 A1 WO 2006034946A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- gese
- electrode
- memory cell
- matrix material
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 230000015654 memory Effects 0.000 claims abstract description 84
- 229910005866 GeSe Inorganic materials 0.000 claims abstract description 70
- 239000011159 matrix material Substances 0.000 claims abstract description 38
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 59
- 230000008569 process Effects 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 24
- 229910052709 silver Inorganic materials 0.000 claims description 19
- 239000004332 silver Substances 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000010416 ion conductor Substances 0.000 claims description 7
- 239000011149 active material Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910052756 noble gas Inorganic materials 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- -1 silver ions Chemical class 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 230000006399 behavior Effects 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000005546 reactive sputtering Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 238000000678 plasma activation Methods 0.000 claims description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims 2
- 229910021645 metal ion Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 230000004888 barrier function Effects 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 6
- 230000003446 memory effect Effects 0.000 abstract description 2
- 238000001556 precipitation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 107
- 238000003860 storage Methods 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011262 electrochemically active material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
- H10N70/046—Modification of switching materials after formation, e.g. doping by diffusion, e.g. photo-dissolution
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
- H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
Definitions
- the invention relates to a semiconductor memory with resistively switching memory cells.
- the invention further relates to a method for producing a semiconductor memory device with nonvolatile, resistively switching memory cells.
- a cell array is usually constructed consisting of a plurality of memory cells and a matrix of column and row inlets or word and bit lines.
- the actual memory cell is located at the crossing points of the leads made of electrically conductive material.
- the column and row inlets or word and bit lines are in each case electrically connected to the memory cell via an upper electrode or top electrode and a lower electrode or bottom electrode.
- the respective word and bit lines are selected and subjected to either a write current or a read current.
- the word and bit lines are controlled by appropriate control devices.
- RAM Random Access Memory
- a RAM memory device is a random access memory, that is, data can be stored under a certain address and later read out again at the same address.
- DRAMs Dynamic Random Access Memory
- a single, appropriately driven capacitive element such as e.g. a trench capacitor
- this charge remains in a DRAM memory cell for only a relatively short time, which is why regular charging, e.g. approximately every 64 ms, a so-called "refresh" must be performed, the information content is written again in the memory cell.
- SRAMs Static Random Access Memories
- DRAMs Dynamic Random Access Memories
- SRAMs do not need to be "refreshed", since the data stored in the transistors of the memory cell are preserved as long as a corresponding supply voltage is supplied to the SRAM.
- NVMs or non-volatile memories such as EPROMs, EEPROMs and flash memories, the stored data remain stored even when the supply voltage is switched off.
- CMOS complementary metal oxide semiconductor
- the flash memory concept is faced with the problem of limited write and read cycles with barrier layers, but no optimal solution has yet been found for the high voltages and slow read and write cycles.
- CB Conductive Bridging RAM
- CB Conductive Bridging RAM
- the CBRAM memory cell can be switched by bipolar electrical pulses between different electrical resistance values.
- such an element can be switched by applying short current or voltage pulses between a very high (eg in the GOhm range) and a significantly lower resistance value (eg in the kOhm range).
- the switching speeds can be less than a microsecond.
- CBRAM memory cells in a volume between an upper electrode and a lower electrode or bottom electrode, there is an electrochemically active material, e.g. so-called chalcogenide material of germanium (Ge), selenium (Se), copper (Cu), sulfur (S) and / or silver (Ag), for example, in a GeSe, GeS, AgSe or CuS compound.
- an electrochemically active material e.g. so-called chalcogenide material of germanium (Ge), selenium (Se), copper (Cu), sulfur (S) and / or silver (Ag), for example, in a GeSe, GeS, AgSe or CuS compound.
- the above-mentioned switching process is based in the CBRAM memory cell in principle that by applying appropriate current or voltage pulses of certain intensity or height and duration at the electrodes in the electrode disposed between the active material elements of a so-called separation clusters in volume always continue to grow until the two electrodes finally bridged electrically conductive, ie electrically connected to each other, which corresponds to the electrically conductive state of the CBRAM cell.
- this process can be reversed again, whereby the relevant CBRAM cell can be brought back into a non-conductive state again.
- a switch between a state with a higher electrical conductivity of the CBRAM memory cell and a state with a lower electrical conductivity of the CBRAM memory cell can be achieved.
- the switching process in the CBRAM memory cell is based essentially on the modulation of the chemical
- composition and the local nanostructure of the doped with a metal chalcogenide material which serves as a solid electrolyte and diffusion matrix.
- the pure chalcogenide material typically exhibits a semiconductive behavior and has a very high electrical resistance at room temperature that is orders of magnitude, i. E. Powers of ten of the ohmic resistance value is higher than that of an electrically conductive metal.
- the current or voltage pulses applied across the electrodes change the steric arrangement and the local concentration of the ionic and metallic constituents of the element which is mobile in the diffusion matrix. Thereby, the so-called bridging, i. an electrical bridging of the volume between the electrodes of metal-rich precipitates, be caused that the electrical
- Resistor of CBRAM memory cell changed by several orders of magnitude by the ohmic resistance value is lowered by several orders of magnitude.
- the surface of glassy sputter deposited GeSe layers of the chalcogenide material also always has an amorphous structure and often contains excess and selenium poorly bound to valence bond with germanium.
- an annealing process at 250 0 C in an oxygen atmosphere is carried out to oxidize the selenium layer on the surface of the GeSe layer and evaporate.
- the disadvantage of this method is that that during this annealing, the entire storage element is heated, so that it can lead to an undesirable modification of the layer properties or interfacial interdiffusion.
- the thermal energies used in this method for the resolution of Selenstromronne lie in the meV range.
- the general aim of the present invention is to provide a non-volatile semiconductor memory which is characterized by good scalability (nanoscale dimensions).
- An object of the present invention is to provide a non-volatile semiconductor memory device which ensures low switching voltages at low switching times and enables a high number of switching cycles with good temperature stability.
- a further object of the present invention is to provide a CBRAM memory cell in which a chemically inert barrier layer is present between the Ag-doped GeSe layer and the Ag top electrode, which improves the switching characteristics of the CBRAM memory cell.
- the objects are achieved according to the present invention by a resistively switching CBRAM semiconductor memory having the features specified in claim 1.
- the objects are further achieved by a method for producing a non-volatile, resistively switching CBRAM memory cell having the features specified in claim 10.
- Advantageous embodiments of the invention are defined in the subclaims.
- a semiconductor memory with resistive switching, nonvolatile memory cells which are respectively arranged at the intersections of a memory cell array of electrical leads, which are respectively connected via a first electrode and a second electrode to the memory cell
- the memory cell comprises a plurality of material layers having at least one active matrix material layer serving as an ion conductor of the memory cell utilizing the ion drift in the
- the matrix material layer has a resistively switching property between two stable states
- the memory cell comprising a GeSe / Ge: H double layer with a glassy GeSe layer and an amorphous Ge: H layer and the amorphous Ge: H layer between the GeSe layer and the second electrode is arranged.
- the solution according to the invention is therefore based on the special structure of the layer matrix of a CBRAM memory cell arranged between the electrodes of the column and row inlets and bit lines, wherein the ion conductor of the CBRAM memory cell is designed as a GeSe / Ge: H double layer system a glassy GeSe layer and an overlying amorphous Ge: H layer comprises.
- the resistive non-volatile storage effect of the CBRAM memory cell is obtained on the one hand, and on the other hand, by means of the thin Ge: H layer containing germanium (Ge) and hydrogen (H) ensured chemical stability of the overlying top electrode, which is preferably made of silver (Ag) in one of the last coating processes.
- the GeSe / Ge: H double layer system according to the present invention formation of AgSe conglomerates in the Ag doping and / or electrode layer is prevented so that precipitations are prevented and homogeneous deposition of the silver doping layer is made possible.
- a memory cell comprising an active material, which is displaceable by electrochemical switching operations in a more or less electrically conductive state, wherein the The method comprises at least the following steps:
- the GeSe / Ge: H double layer is deposited before the Ag doping process step and thus forms the entire active memory layer matrix, into which the Ag ion conductor is then preferably subsequently is incorporated by photodiffusion.
- the surface layer of the double layer consists of an amorphous Ge: H compound, which is temperature-stable and chemically inert to silver.
- the method according to the invention for producing a CBRAM memory cell avoids the implementation of an annealing process step in which the doped silver can uncontrollably diffuse through the GeSe matrix and thus short-circuit the CBRAM memory cell.
- Another advantage of the GeSe / Ge: H double layer produced by the method according to the invention is that the double layer in the same system and without intermediate aeration in a process step by reactive sputtering of a GeSe and Ge target in a noble gas or noble gas / hydrogen mixture can be produced.
- the GeSe / Ge: H bilayer system can be deposited on the GeSe layer in a common process step, without the need for intermediate filling or the use of another system.
- the passivation layer is only deposited after the photodiffusion or subsequently carried out in an annealing process in an oxygen atmosphere.
- deposition of the Ge: H layer onto the already Ag-doped GeSe layer is fundamentally possible since the Ag-doped GeSe layer is not an oxide layer.
- the advantage of the GeSe / Ge: H double-layer system lies in the chemically inert nature of the interface, the electronically undisturbed connection between the top electrode and the ion conductor in the GeSe / Ge: H matrix layer and in the improved temperature resistance and in the reduced production costs.
- Double layer matrix into which the Ag ion conductor is diffused Due to the similarity of the structure of the amorphous, glassy GeSe layer and the amorphous Ge: H layer, the subsequent photodiffusion process, with which the silver is incorporated into the GeSe / Ge: H bilayer matrix, is not affected. Due to the spatial separation of the GeSe layer to the Ag top electrode due to the chemical barrier formed by the Ge: H layer to the Ag top electrode, no reaction partner for the silver, in particular no selenium is present, so that the formation of conglomerates in the Ag - Electrode layer is prevented.
- the switching properties of the GeSe layer matrix described above, on which the resistive non-volatile memory effect of the CBRAM memory cell is based, are not modified by the thin, amorphous Ge: H layer.
- the amorphous Ge: H layer is more stable in temperature than the GeSe layer or an additional oxide passivation layer and thus improves the temperature resistance of the CBRAM memory element according to the invention during subsequent process steps.
- the advantages of the GeSe / Ge: H bilayer explained above are significant for the stable operation of the CBRAM memory element.
- the formation of the GeSe / Ge: H bilayer can be achieved by modifying known processes for making a GeSe: Ag resistive, nonvolatile CBRAM memory element.
- a sputter coating plant such as in the system ZV 6000 Fa. Leybold or similar systems of the Fa. KDF, without interruption of the vacuum three different sputtering targets are used.
- To produce the GeSe / Ge: H: Ag storage element for example, a GeSe, Ge and Ag target are installed in a sputtering system of this type.
- the GeSe layer is deposited by means of rf magnetron sputtering of a GeSe compound target into the prefabricated vias of the memory element.
- argon is usually used as the sputtering gas at a pressure of about 4 to 5 ⁇ 10 -3 mbar and an RF sputtering power in the range of 1 to 2 kW.
- the generated layer thickness is about 40 nm to 45 nm.
- the elementary Ge target is atomized instead of the GeSe target.
- a reactive noble gas / hydrogen mixture is used, wherein the hydrogen reacts with the germanium to Ge: H on the layer surface.
- the same pressure and the same rf power can be used as in the first second sub-step, wherein the second
- Sub-step generated layer thickness should be in the range of 5 nm to 10 nm.
- a similar sputtering process as for the deposition of absorber material for thin-film solar cells can be used.
- a GeSe / Ge: H bilayer matrix is generated according to the present invention.
- the Ag top electrode is deposited by dc magnetron sputtering from the Ag element target in a noble gas.
- FIG. 1 shows the schematic structure of a CBRAM
- Memory cell with a GeSe / Ge: H bilayer matrix in a preferred embodiment of the invention.
- the incorporation of the GeSe / Ge: H double layer into the via of the CBRAM memory element according to the invention is shown schematically in FIG.
- the wafers used preferably already have structures for a W bottom electrode and corresponding vias in the insulator layer with the required dimensions.
- the CBRAM memory cell shown in the figure comprises a layer stack of material layers which is built up on a substrate.
- the layers are prepared in several process steps according to the present invention in the manner described above.
- the lowermost layer represents a first electrode or bottom electrode 1, while the uppermost layer consists of a second electrode or top electrode 2.
- the layer stack of the CBRAM memory cell is connected to the electrical leads, the column and row inlets or word and bit lines of the semiconductor memory via the two electrodes 1 and 2.
- the electrodes 1, 2 are each fabricated in a sputtering process using an Ag sputtering target of silver. Between the electrodes 1, 2 there is an active matrix material layer 3, which contains a GeSe / Ge: H double layer.
- the matrix material layer 3 is doped with silver ions and has an amorphous, micromorphic or microcrystalline structure.
- a doping layer (not shown) which serves to doping the matrix material layer 3 with silver ions, and on the doping layer is the layer of the second electrode 2.
- a contact hole 6 is provided, which enables a contacting of the bottom electrode 1 from above.
- the material layers of the memory cell are bounded laterally by a dielectric 4, 5, which is arranged between the contact hole 6 and the material layers of the memory cell.
- the GeSe / Ge: H double layer comprises a GeSe layer and a Ge: H layer arranged above it, so that the Ge: H
- the GeSe / Ge: H double-layer matrix is first produced, into which the Ag ion conductor is subsequently diffused by a photodiffusion process. Due to the similarity of the structure of the amorphous, glassy GeSe layer and the amorphous Ge: H layer, the subsequent photodiffusion process, with which the silver is incorporated into the GeSe / Ge: H bilayer matrix, is unaffected.
- the Ge: H layer Due to the spatial separation of the GeSe layer from the Ag top electrode due to the chemical barrier of the thin, amorphous Ge: H layer, the formation of silver Conglomerates on the active matrix material layer 3 effectively prevented, whereby the switching characteristics of the CBRAM memory cell can be improved.
- the Ge: H layer is more stable in temperature than the GeSe layer and thus improves the temperature resistance of the CBRAM memory element according to the invention during subsequent process steps.
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- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/631,055 US20090045387A1 (en) | 2004-09-27 | 2005-09-07 | Resistively switching semiconductor memory |
EP05782602A EP1794821A1 (de) | 2004-09-27 | 2005-09-07 | Resistiv schaltender halbleiterspeicher |
JP2006537324A JP2007509509A (ja) | 2004-09-27 | 2005-09-07 | 抵抗スイッチング半導体メモリー |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004046804.4 | 2004-09-27 | ||
DE102004046804A DE102004046804B4 (de) | 2004-09-27 | 2004-09-27 | Resistiv schaltender Halbleiterspeicher |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006034946A1 true WO2006034946A1 (de) | 2006-04-06 |
Family
ID=35160128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2005/054410 WO2006034946A1 (de) | 2004-09-27 | 2005-09-07 | Resistiv schaltender halbleiterspeicher |
Country Status (8)
Country | Link |
---|---|
US (1) | US20090045387A1 (de) |
EP (1) | EP1794821A1 (de) |
JP (1) | JP2007509509A (de) |
KR (1) | KR20060082868A (de) |
CN (1) | CN1879233A (de) |
DE (1) | DE102004046804B4 (de) |
TW (1) | TWI292191B (de) |
WO (1) | WO2006034946A1 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2895531A1 (fr) * | 2005-12-23 | 2007-06-29 | Commissariat Energie Atomique | Procede ameliore de realisation de cellules memoires de type pmc |
KR100833903B1 (ko) * | 2006-06-13 | 2008-06-03 | 광주과학기술원 | 비휘발성 기억소자, 그 제조방법 및 그 제조장치 |
US7804704B2 (en) | 2004-12-23 | 2010-09-28 | Commissariat A L'energie Atomique | PMC memory with improved retention time and writing speed |
US8048713B2 (en) | 2007-10-16 | 2011-11-01 | Commissariat A L'energie Atomique | Process for manufacturing a CBRAM memory having enhanced reliability |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006011461B4 (de) * | 2006-03-13 | 2008-08-28 | Infineon Technologies Ag | Elektrische Struktur mit einer Festkörperelektrolytschicht, programmierbare Struktur, Speicher mit einer Speicherzelle und Verfahren zum Herstellen der elektrischen Struktur |
DE102006028977B4 (de) * | 2006-06-23 | 2012-04-12 | Qimonda Ag | Sputterdepositions-Vorrichtung |
US8178379B2 (en) * | 2007-04-13 | 2012-05-15 | Qimonda Ag | Integrated circuit, resistivity changing memory device, memory module, and method of fabricating an integrated circuit |
FR2934711B1 (fr) * | 2008-07-29 | 2011-03-11 | Commissariat Energie Atomique | Dispositif memoire et memoire cbram a fiablilite amelioree. |
TWI401796B (zh) * | 2008-12-30 | 2013-07-11 | Ind Tech Res Inst | 導通微通道記憶體元件及其製造方法 |
US20110084248A1 (en) * | 2009-10-13 | 2011-04-14 | Nanya Technology Corporation | Cross point memory array devices |
TWI625874B (zh) * | 2015-11-05 | 2018-06-01 | 華邦電子股份有限公司 | 導電橋接式隨機存取記憶體 |
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WO2002021542A1 (en) * | 2000-09-08 | 2002-03-14 | Axon Technologies Corporation | Microelectronic programmable device and methods of forming and programming the same |
US20030045049A1 (en) * | 2001-08-29 | 2003-03-06 | Campbell Kristy A. | Method of forming chalcogenide comprising devices |
WO2003071614A2 (en) * | 2002-02-20 | 2003-08-28 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
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US6635914B2 (en) * | 2000-09-08 | 2003-10-21 | Axon Technologies Corp. | Microelectronic programmable device and methods of forming and programming the same |
US6815818B2 (en) * | 2001-11-19 | 2004-11-09 | Micron Technology, Inc. | Electrode structure for use in an integrated circuit |
US6867064B2 (en) * | 2002-02-15 | 2005-03-15 | Micron Technology, Inc. | Method to alter chalcogenide glass for improved switching characteristics |
-
2004
- 2004-09-27 DE DE102004046804A patent/DE102004046804B4/de not_active Expired - Fee Related
-
2005
- 2005-08-10 TW TW094127239A patent/TWI292191B/zh not_active IP Right Cessation
- 2005-09-07 EP EP05782602A patent/EP1794821A1/de not_active Withdrawn
- 2005-09-07 CN CN200580000916.6A patent/CN1879233A/zh active Pending
- 2005-09-07 US US11/631,055 patent/US20090045387A1/en not_active Abandoned
- 2005-09-07 JP JP2006537324A patent/JP2007509509A/ja active Pending
- 2005-09-07 WO PCT/EP2005/054410 patent/WO2006034946A1/de active Application Filing
- 2005-09-07 KR KR1020067005504A patent/KR20060082868A/ko not_active Application Discontinuation
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WO2002021542A1 (en) * | 2000-09-08 | 2002-03-14 | Axon Technologies Corporation | Microelectronic programmable device and methods of forming and programming the same |
US20030045049A1 (en) * | 2001-08-29 | 2003-03-06 | Campbell Kristy A. | Method of forming chalcogenide comprising devices |
WO2003071614A2 (en) * | 2002-02-20 | 2003-08-28 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7804704B2 (en) | 2004-12-23 | 2010-09-28 | Commissariat A L'energie Atomique | PMC memory with improved retention time and writing speed |
FR2895531A1 (fr) * | 2005-12-23 | 2007-06-29 | Commissariat Energie Atomique | Procede ameliore de realisation de cellules memoires de type pmc |
US7833822B2 (en) | 2005-12-23 | 2010-11-16 | Commissariat A L'energie Atomique | Method for making PMC type memory cells |
US8021953B2 (en) | 2005-12-23 | 2011-09-20 | Commissariat A L'energie Atomique | Method for making PMC type memory cells |
KR100833903B1 (ko) * | 2006-06-13 | 2008-06-03 | 광주과학기술원 | 비휘발성 기억소자, 그 제조방법 및 그 제조장치 |
US8048713B2 (en) | 2007-10-16 | 2011-11-01 | Commissariat A L'energie Atomique | Process for manufacturing a CBRAM memory having enhanced reliability |
Also Published As
Publication number | Publication date |
---|---|
EP1794821A1 (de) | 2007-06-13 |
DE102004046804B4 (de) | 2006-10-05 |
US20090045387A1 (en) | 2009-02-19 |
JP2007509509A (ja) | 2007-04-12 |
TWI292191B (en) | 2008-01-01 |
DE102004046804A1 (de) | 2006-04-06 |
TW200618114A (en) | 2006-06-01 |
CN1879233A (zh) | 2006-12-13 |
KR20060082868A (ko) | 2006-07-19 |
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