WO2006025408A1 - Appareil d’exposition et procédé pour la fabrication d’un dispositif - Google Patents

Appareil d’exposition et procédé pour la fabrication d’un dispositif Download PDF

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Publication number
WO2006025408A1
WO2006025408A1 PCT/JP2005/015800 JP2005015800W WO2006025408A1 WO 2006025408 A1 WO2006025408 A1 WO 2006025408A1 JP 2005015800 W JP2005015800 W JP 2005015800W WO 2006025408 A1 WO2006025408 A1 WO 2006025408A1
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WIPO (PCT)
Prior art keywords
optical system
projection optical
exposure light
exposure apparatus
illumination
Prior art date
Application number
PCT/JP2005/015800
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English (en)
Japanese (ja)
Inventor
Yusaku Uehara
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2006532735A priority Critical patent/JP5266641B2/ja
Publication of WO2006025408A1 publication Critical patent/WO2006025408A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G02B27/0068—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration having means for controlling the degree of correction, e.g. using phase modulators, movable elements

Definitions

  • the present invention relates to an exposure apparatus that transfers a mask pattern onto a substrate via a projection optical system, and a device manufacturing method for manufacturing a device using the exposure apparatus.
  • a reticle pattern as a mask is coated with a photoresist as a substrate.
  • a projection exposure apparatus such as a stepper is used to transfer to each shot area on the wafer (or glass plate or the like).
  • the imaging characteristics of the projection optical system change depending on the exposure light irradiation amount and the ambient pressure change. For this reason, in order to maintain the imaging characteristics in a desired state, the projection exposure apparatus controls the position or posture (tilt) of some optical members constituting the projection optical system, for example.
  • An imaging characteristic correction mechanism for correcting the imaging characteristics is provided.
  • the imaging characteristics that can be corrected by the conventional imaging characteristics correction mechanism are low-order and low-order components such as distortion and magnification.
  • annular illumination in order to increase the resolution for a specific pattern, so-called annular illumination, quadrupole illumination (2 regions on the pupil plane of the illumination optical system are divided into 2 regions).
  • illumination conditions are used in which the exposure light does not pass through a region including the optical axis on the pupil plane of the illumination optical system, such as an illumination method as a next light source.
  • the exposure light is illuminated with the optical member near the pupil plane in the projection optical system being substantially hollow.
  • a scanning exposure type projection exposure apparatus such as a scanning stepper has recently been widely used.
  • the reticle is illuminated in a rectangular illumination area whose scanning direction is the short side direction, for example, so that the reticle is optically close to the reticle and wafer in the projection optical system.
  • a non-rotationally symmetric region is mainly illuminated by the exposure light.
  • Patent Document 1 Japanese Patent Laid-Open No. 10-64790
  • Patent Document 2 Japanese Patent Laid-Open No. 10-50585
  • Dipole illumination (bipolar illumination) may be used as a secondary light source. Since this dipole illumination has a large light amount distribution and non-rotation symmetry compared to quadrupole illumination, astigmatism on the optical axis, which is a non-rotationally symmetric aberration component in the projected image (hereinafter referred to as “center-astigma”). "Taism”) occurs. Dipole illumination also causes non-rotationally symmetric aberration fluctuations other than center astigmatism.
  • the present invention has been made in view of the above circumstances, and an object thereof is to provide an exposure apparatus that can maintain the optical characteristics of a projection optical system in a desired state, and a device manufacturing method using the exposure apparatus. To do.
  • an exposure apparatus of the present invention includes an illumination optical system (ILS) that irradiates illumination light (IL) onto a mask (R), and an image of the mask pattern on a substrate (W).
  • an exposure apparatus comprising a projection optical system (PL) for projection, an adjustment device (14, 22, 40) for adjusting the optical characteristics of the projection optical system and a conjugate plane of the image plane of the projection optical system
  • a setting device (9) for setting at least one of the cross-sectional shape and size of the illumination light, and the projection by the adjusting device according to the cross-sectional shape and size of the illumination light set by the setting device
  • a control device (20) for controlling the adjustment of the optical characteristics of the optical system.
  • the optical characteristics of the projection optical system are adjusted according to the cross-sectional shape and size of the illumination light in the conjugate plane with the image plane of the projection optical system.
  • the exposure apparatus of the present invention includes an illumination optical system (ILS) that irradiates the mask (R) with illumination light (IL), and an image of the mask pattern on the substrate (W).
  • ILS illumination optical system
  • the first adjustment mechanism adjusts the non-rotationally symmetric static optical characteristic in the projection optical system
  • the second adjustment mechanism adjusts the non-rotationally symmetric dynamic optical characteristic in the projection optical system. Is done.
  • the device manufacturing method of the present invention is characterized by including a step (S46) of transferring a device pattern onto the object (W) using the above exposure apparatus.
  • the optical characteristics of the projection optical system can be maintained in a desired state. Further, by using an exposure apparatus that can maintain the optical characteristics of the projection optical system in a desired state, it is possible to manufacture a device with a high yield.
  • FIG. 1 is a view showing the schematic arrangement of an exposure apparatus according to an embodiment of the present invention.
  • FIG. 2 is a diagram illustrating an example of an imaging characteristic correction mechanism.
  • FIG. 3A is a cross-sectional view showing a configuration example of an adjustment mechanism.
  • FIG. 3B is a top view showing a configuration example of an adjustment mechanism.
  • FIG. 4 is a diagram showing another configuration example of the temperature regulator.
  • FIG. 5 is a diagram showing a configuration example of a temperature regulator using a heat transport mechanism.
  • FIG. 6A is a front view with a section of a part of the projection optical system.
  • FIG. 6B is a front view showing a cross section of a part of the projection optical system.
  • FIG. 7A is a diagram for explaining a lens shape change that occurs when dipole illumination is performed.
  • FIG. 7B is a diagram for explaining a lens shape change that occurs when dipole illumination is performed.
  • FIG. 7C is a diagram for explaining the lens shape change that occurs when dipole illumination is performed.
  • FIG. 7D is a diagram for explaining a lens shape change that occurs when dipole illumination is performed.
  • FIG. 8A is a diagram for explaining a change in the shape of a lens that occurs when dipole illumination is performed.
  • FIG. 8B is a diagram for explaining the lens shape change that occurs when dipole illumination is performed.
  • FIG. 9 is a diagram showing center astigmatism caused by dipole illumination.
  • FIG. 10A is a diagram for explaining an example of a method for correcting non-rotationally symmetric aberration of a projection optical system using a non-exposure light irradiation mechanism.
  • FIG. 10B is a diagram for explaining an example of a method for correcting non-rotationally symmetric aberration of the projection optical system using the non-exposure light irradiation mechanism.
  • FIG. 11 is a block diagram showing an internal configuration of the main control system and an apparatus for exchanging various signals with the main control system.
  • FIG. 12 is a diagram showing a typical transfer function with respect to the focus fluctuation amount.
  • FIG. 13 is a diagram for explaining an example of a table stored in a memory.
  • FIG. 14 is a flowchart showing a part of a manufacturing process for manufacturing a semiconductor element as a micro device.
  • FIG. 15 is a diagram showing an example of a detailed flow of step S 13 in FIG.
  • FIG. 1 is a view showing the schematic arrangement of an exposure apparatus according to an embodiment of the present invention.
  • the exposure apparatus shown in FIG. 1 sequentially moves the pattern formed on the reticle R onto the wafer W while moving the reticle R as a mask and the wafer W as a substrate relative to the projection optical system PL.
  • This is a scanning exposure type exposure apparatus of the next “and” scanning method for transferring.
  • an XYZ orthogonal coordinate system is set in the drawing, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system.
  • the XYZ Cartesian coordinate system shown in Fig. 1 is set so that the X-axis and Y-axis are almost parallel to the wafer W surface, and the Z-axis is set in a direction almost perpendicular to the wafer W surface. Yes.
  • the XYZ coordinate system in the figure the XY plane is actually set parallel to the horizontal plane, and the Z axis is set vertically.
  • the direction in which the reticle R and the wafer W are moved synchronously is set to the Y direction.
  • the exposure apparatus shown in FIG. 1 includes an exposure light source 1, an illumination optical system ILS, a reticle stage RST, a projection optical system PL, a wafer stage WST, and a main control system 20.
  • the exposure light source 1 is, for example, a KrF excimer laser light source (wavelength 247 nm).
  • ArF excimer laser light source (wavelength 193 nm), F laser light source (wavelength 157 nm), Kr laser light source (
  • UV laser light source such as Ar laser light source (wavelength 126nm), YAG laser
  • Harmonic generator solid-state laser (semiconductor laser, etc.) harmonic generator, or mercury run (I-line etc.) can also be used.
  • the exposure light IL pulsed from the exposure light source 1 at the time of exposure is shaped into a predetermined shape through a beam shaping optical system (not shown) and the like as an optical integrator (a homogenizer or a homogenizer).
  • the light is incident on the first fly-eye lens 2 and the illuminance distribution is made uniform.
  • the exposure light IL emitted from the first fly-eye lens 2 is incident on the second fly-eye 4 as an optical integrator through a relay lens (not shown) and the vibrating mirror 3, and the illuminance distribution is further uniformized.
  • the vibrating mirror 3 is used for reducing speckles of the exposure light IL that is laser light and reducing interference fringes by a fly-eye lens.
  • a diffractive optical element DOE: Dilfractive Optical Element
  • an internal reflection type integrator rod lens or the like
  • the exposure light intensity distribution (secondary light source) has a small circle (small ⁇ illumination), a normal circle, Illumination system aperture stop member 5 for determining illumination conditions by setting to any one of multiple eccentric regions (dipole and quadrupole illumination) and ring-shaped zones, etc., is rotatably arranged by drive motor 5c Has been.
  • the main control system 20 composed of a computer that controls the overall operation of the apparatus controls the rotation angle of the illumination system aperture stop member 5 via the drive motor 5c to set the illumination conditions. In the state shown in FIG.
  • the first dipole illumination two-pole illumination
  • a second dipole illumination aperture stop 5b obtained by rotating the aperture stop 5a by 90 °.
  • an aperture stop 5a for the first dipole illumination is installed.
  • the light distribution on the pupil plane of the illumination optical system ILS is adjusted using the illumination system aperture stop member 5, but as disclosed in US Pat. No. 6,563,567.
  • the light amount distribution on the pupil plane of the illumination optical system ILS may be adjusted using another optical member.
  • the exposure light IL that has passed through the aperture stop 5a in the illumination system aperture stop member 5 is incident on the beam splitter 6 having a low reflectance.
  • the exposure light reflected by the beam splitter 6 is received by the integrator sensor 7 via a condenser lens (not shown).
  • the detection signal of the integrator sensor 7 is supplied to the main control system 20. Based on this detection signal, the main control system 20
  • the output of the light source 1 is controlled, and the pulse energy of the exposure light IL is controlled step by step using a dimming mechanism (not shown) as necessary.
  • the exposure light IL that has passed through the beam splitter 6 is incident on the aperture of the field stop 9 via a relay lens (not shown).
  • the field stop 9 is actually composed of a fixed field stop (fixed blind) and a movable field stop (movable blind) force.
  • the latter movable field stop is arranged on a plane almost conjugate with the pattern surface (reticle surface) of the reticle R, and the former fixed field stop is arranged on a plane defocused slightly with a conjugate surface force with the reticle plane.
  • the fixed field stop is used to define the shape of the illumination area on the reticle R.
  • the fixed field stop is defocused slightly with respect to the reticle surface will be described as an example, but it may be arranged on the conjugate surface.
  • the movable field stop moves in synchronization with reticle R (or wafer W) so that unnecessary portions are not exposed at the start and end of scanning exposure to each shot area to be exposed. Used to block the lighting area.
  • the fixed field stop does not move in synchronization with the reticle R (or wafer W), it is also used to define the center and width of the illumination area in the scanning direction and non-scanning direction as required.
  • the main control system 20 controls the operations of the fixed field stop and the movable field stop.
  • the exposure light IL that has passed through the aperture of the field stop 9 passes through a condenser lens (not shown), a mirror 10 for bending the optical path, and a condenser lens 11, so that the illumination area of the reticle surface of the reticle R is made uniform. Illuminate with illumination distribution.
  • the normal shape of the aperture of the field stop 9 (fixed field stop) is a rectangle with an aspect ratio of about 1: 3 to 1: 4. Therefore, the normal shape of the illumination area on the reticle R that is almost conjugate with the aperture of the field stop 9 is also rectangular.
  • the main control system 20 changes the shape of the aperture of the field stop 9 so that the distribution of the exposure light IL irradiated onto the reticle R, that is, the cross-sectional shape and size of the exposure light IL (the image plane of the projection optical system).
  • the cross-sectional shape and size of the illumination light at the conjugate plane changes.
  • the distribution (density) of apertures and patterns defined by the light shielding area around the reticle R area formed to shield unnecessary light
  • the shape and size of the illumination light on the conjugate plane with the image plane of the projection optical system change.
  • the pattern in the illumination area of the reticle R is coated with a photoresist with a projection magnification of
  • 8 is 1Z4, 1Z5, etc.
  • the exposure area is a rectangular area conjugate with the illumination area on the reticle R with respect to the projection optical system PL.
  • the wafer W is a disk-shaped substrate having a diameter of about 200 to 300 mm, such as a semiconductor (silicon etc.) or SOI (silicon on insulator).
  • a part of the exposure light IL is reflected by the wafer W, and the reflected light passes through the projection optical system PL, the reticle R, the condenser lens 11, the mirror 10, and the field stop 9 in this order and returns to the beam splitter 6 to return to the beam splitter.
  • the light further reflected by 6 is received by a reflection amount sensor (reflectance monitor) 8 through a condenser lens (not shown).
  • the detection signal of the reflection amount sensor 8 is supplied to the main control system 20.
  • environmental sensors 12 for measuring atmospheric pressure and temperature are arranged outside the projection optical system PL (for example, a total of four locations on the ⁇ X side and the Y side of the projection optical system PL). Measurement data measured by the environmental sensor 12 is also supplied to the main control system 20.
  • An illumination optical system ILS is composed of the exposure light source 1, fly-eye lenses 2 and 4, mirrors 3 and 10, illumination system aperture stop member 5, field stop 9, condenser lens 11, and the like.
  • the illumination optical system IL S is further covered with a sub-chamber (not shown) as an airtight chamber.
  • a sub-chamber (not shown) as an airtight chamber.
  • dry air from which impurities are highly removed is placed in the subchamber and in the lens barrel of the projection optical system PL. Nitrogen gas, helium gas, etc. are also used.
  • the projection optical system PL of the present embodiment is a refractive system, and the plurality of optical members constituting the projection optical system PL are quartz that is rotationally symmetric about the optical axis AX (exposure light is ArF excimer).
  • exposure light is ArF excimer
  • ZA it includes a plurality of lenses made of fluorite, etc., and a flat aberration correction plate made of quartz.
  • An aperture stop 13 is disposed on the pupil plane PP of the projection optical system PL (a plane conjugate with the pupil plane of the illumination optical system ILS), and lenses L1 and L2 are disposed near the pupil plane PP.
  • the lens L1 in order to adjust dynamic optical characteristics (particularly non-rotationally symmetric aberration) of the projection optical system PL, illumination light having a wavelength region different from that of the exposure light IL is applied. It is irradiated by.
  • the lens L2 is subjected to a predetermined adjustment by the adjusting mechanism 22 in order to adjust the static optical characteristics (particularly non-rotationally symmetric aberration) of the projection optical system PL.
  • Adjustment of the optical characteristics of the projection optical system PL by the adjustment mechanism 22 and the non-exposure light irradiation mechanism 40 is controlled by the main control system 20. To do. Details of the adjustment mechanism 22 and the non-exposure light irradiation mechanism 40 will be described later.
  • the main control system 20 controls the operation of the imaging characteristic correction mechanism 14 for adjusting the optical characteristics (particularly rotationally symmetric aberration) of the projection optical system PL via the control unit 15.
  • the static optical characteristics of the projection optical system PL are the optical characteristics when the projection optical system PL is in the initial state, that is, when the projection optical system PL is not affected by the irradiation of the exposure light IL.
  • the dynamic optical characteristics of the system PL are optical characteristics that change when the projection optical system PL is irradiated with the exposure light IL.
  • Reticle R is attracted and held on reticle stage RST.
  • Reticle stage RST moves at a constant speed in the Y direction on a reticle base (not shown), and X direction, Y direction,
  • the reticle R is scanned by slightly moving in the rotation direction.
  • the position and rotation angle of reticle stage RST in the X and Y directions are measured by a movable mirror (not shown) and a laser interferometer (not shown) provided on reticle stage RST. It is supplied to the control system 20.
  • a slit image is projected obliquely onto the pattern surface (reticle surface) of the reticle R, the reflected light of the reticle surface force is received, and the slit image is re-imaged.
  • An oblique-incidence focus sensor (hereinafter referred to as “reticle-side AF sensor”) 16 that detects the displacement of the reticle surface in the Z direction from the amount of lateral displacement of the slit image is disposed. Information detected by the reticle side AF sensor 16 is supplied to the main control system 20.
  • a reticle alignment microscope (not shown) for reticle alignment is disposed above the periphery of the reticle R.
  • the wafer W is sucked and held on the Z tilt stage 17 via a wafer holder (not shown).
  • the Z tilt stage 17 is fixed on the wafer stage WST, and the wafer stage WST can be moved at a constant speed in the Y direction on a wafer base (not shown) and can be moved stepwise in the X direction and the Y direction.
  • the Z tilt stage 17 controls the position of the wafer W in the Z direction and the tilt angles around the X and Y axes.
  • the position and rotation angle in the X and Y directions of wafer stage WST are measured by a laser interferometer (not shown), and the measured values are supplied to main control system 20.
  • the main control system 20 controls the position and speed of the wafer stage WST based on the measurement values and various control information.
  • a plurality of slit images are projected obliquely onto the surface of the wafer W (wafer surface), and reflected light from the wafer surface is received to reconstruct the slit images.
  • An oblique-incidence focus sensor (hereinafter referred to as the "wafer-side AF sensor") that forms an image and detects the displacement (defocus amount) and tilt angle of the wafer surface in the Z direction from the lateral displacement of the slit images. 18 is arranged. Information detected by the wafer side AF sensor 18 is supplied to the main control system 20.
  • the main control system 20 constantly projects the wafer surface based on the detection information of the reticle side AF sensor 16 and the wafer side AF sensor 18.
  • the Z tilt stage 17 is driven so as to be focused on the image plane of the optical system PL.
  • a dose sensor 19 including a photoelectric sensor having a light receiving surface covering the entire exposure area of the exposure light IL is fixed, and the dose sensor 19 The detection signal is supplied to the main control system 20.
  • the exposure light IL is irradiated with the light receiving surface of the irradiation sensor 19 moved to the exposure area of the projection optical system PL, and the detection signal of the irradiation sensor 19 is detected as the detection signal of the integrator sensor 7.
  • the main control system 20 calculates and stores the transmittance of the optical system from the beam splitter 6 to the dose sensor 19 (wafer W).
  • an aberration measuring device 21 for measuring the aberration of the projection optical system PL is provided on the Z tilt stage 17.
  • the measurement result of the aberration measuring device 21 is supplied to the main control system 20.
  • an aerial image sensor as disclosed in Japanese Patent Application Laid-Open No. 2002-14005 (corresponding US Patent Publication 2002Z0041377) can be used.
  • an off-axis alignment sensor (not shown) for wafer alignment is arranged above wafer stage WST, and the above-mentioned reticle alignment microscope and the detection result of the alignment sensor are arranged.
  • the main control system 20 performs the reticle R alignment and the wafer W alignment.
  • the reticle stage RST and wafer stage WST are driven while the illumination area on the reticle R is irradiated with the exposure light IL, and the reticle R and one shot area on the wafer W are synchronously scanned in the Y direction. And the operation of stepping the wafer W in the X and Y directions by driving the wafer stage WST are repeated.
  • the pattern image of the reticle R is exposed to each shot area on the wafer W by the step “and” scanning method.
  • the overall configuration of the exposure apparatus according to the embodiment of the present invention has been described above.
  • the imaging characteristic correction mechanism 14 and the adjustment mechanism 22 provided for adjusting the optical characteristics of the projection optical system PL are described.
  • the non-exposure light irradiation mechanism 40 will be described in order.
  • FIG. 2 is a diagram illustrating an example of the imaging characteristic correction mechanism 14.
  • five lenses Ll l, L12, L13, L14, and L15 selected from a plurality of optical members are independently expanded and contracted in the direction of the three optical axes in the lens barrel of the projection optical system PL. It is held via free drive elements 14a, 14b, 14c, 14d, 14e. Fixed lenses (not shown) and aberration correction plates are also arranged before and after the lenses L11 to L15.
  • the three drive elements 14a (only two are shown in FIG. 2) are arranged in a positional relationship that is approximately the apex of a regular triangle, and each of the other three drive elements is similarly driven.
  • the elements 14b to 14e are also arranged in a positional relationship that is almost the vertex of an equilateral triangle.
  • the extendable drive elements 14a to 14e for example, piezoelectric elements such as piezoelectric elements, magnetostrictive elements, or electric micrometers can be used.
  • the control unit 15 independently controls the expansion / contraction amounts of the drive elements 14a to 14e based on the control information from the main control system 20, whereby the position of each of the five lenses L11 to L15 in the optical axis direction and the light The tilt angle around two perpendicular axes perpendicular to the axis can be controlled independently. As a result, a predetermined rotationally symmetric aberration in the imaging characteristics of the projection optical system PL can be corrected.
  • the rotationally symmetric optical characteristics (aberration) of the projection optical system PL adjusted by the imaging characteristic correction mechanism 14 are: focus error, projection magnification error, curvature of field aberration, distortion (distortion), coma aberration, spherical Including at least one of the aberrations.
  • distortion aberration including magnification error
  • spherical aberration or the like can be corrected by controlling the position in the optical axis direction of the lens L13 at a position close to the pupil plane of the projection optical system PL. 2 may be the same as the lens L1 irradiated with the illumination light for aberration correction in the projection optical system PL of FIG.
  • the mechanism for driving the lens or the like in the projection optical system PL as described above for example, It is also disclosed in Japanese Patent Laid-Open No. 4-134813. Further, instead of or together with the optical member in the projection optical system PL, the position in the optical axis direction of the reticle R in FIG. 1 may be controlled to correct a predetermined rotationally symmetric aberration. . Further, as the imaging characteristic correction mechanism 14 in FIG. 1, as disclosed in, for example, Japanese Patent Laid-Open No. 60-78454, a sealed space between two predetermined lenses in the projection optical system PL is used. A mechanism for controlling the pressure of the gas may be used.
  • FIG. 3A is a cross-sectional view illustrating a configuration example of the adjustment mechanism 22, and FIG. 3B is a top view illustrating a configuration example of the adjustment mechanism 22.
  • FIG. 3A and 3B only the configuration of the adjustment mechanism 22 is shown for the sake of simplicity, and the configuration other than the adjustment mechanism 22 (for example, a lens barrel or the like) is not shown.
  • the adjustment mechanism 22 includes a holding member 22a, a temperature adjuster 22b, an adjustment screw 22c, and the like.
  • the holding member 22a is formed of a material having a high thermal conductivity such as aluminum, and holds the lens L2 in contact with one end around the lens L2.
  • the temperature adjuster 22b includes a heating element such as a heater or a heating and cooling element such as a Peltier element, and heats or cools the lens L2 in order to adjust the optical characteristics of the projection optical system PL.
  • the temperature adjuster 22b is mounted on the holding member 22a, and heats or cools the lens L2 via the holding member 22a having high thermal conductivity.
  • the temperature adjustment of the lens L2 performed through the holding member 22a is controlled by the control unit 23 under the control of the main control system 20.
  • the temperature adjuster 22b may be directly attached to the lens L2 to adjust the temperature of the lens L2.
  • the holding member 22a is formed with a screw hole penetrating from the contact surface to the lens L2 to one side surface (a surface facing the contact surface), and the adjustment screw 22c is fitted into the screw hole.
  • the adjusting screw 22c is arranged so that its axis is substantially parallel to a plane perpendicular to the optical axis of the lens L2.
  • the adjustment screw 22c is used to pressurize or depressurize the lens L2 in order to adjust the optical characteristics of the projection optical system PL.
  • the lens L2 By rotating the adjustment screw 22c in the direction of the directional force toward the center of the lens L2, the lens L2 can be pressurized (increasing the force to press the lens L2), and conversely in the direction of the directional force from the center of the lens L2 Rotate the adjustment screw 22c to move the lens L2 Reduce the pressure (reduce or eliminate the force pushing the lens L2). Since this adjusting screw 22c is a member for pressing the lens L2, it is desirable to form it with a highly rigid material. Further, the temperature adjuster 22b is capable of heating or cooling the lens L2 efficiently. It is highly conductive and is preferably made of a material.
  • a lens barrel (not shown) provided in the projection optical system PL is provided with an operation hole (not shown) for operating the adjustment screw 22c.
  • the operator is formed in the lens barrel from the outside of the lens barrel.
  • the adjusting screw 22c can be adjusted through the operation hole. Note that the inside of the projection optical system PL is temperature-controlled to suppress fluctuations in optical characteristics. For this reason, for example, it is usually desirable to remove the lid so that the operation hole appears only when the adjustment screw 22c is operated.
  • a plurality of adjustment mechanisms 22 are provided around the lens L2.
  • eight adjustment mechanisms 22 are provided so as to form an angle of 45 ° with respect to the center of the lens L2.
  • the temperature regulator 22b provided in the adjustment mechanism 22 is connected to the control unit 23, and which temperature regulator 22b is to be temperature-adjusted and how many times are to be adjusted? It is controlled by the controller 2 3.
  • the static optical characteristics (non-rotationally symmetric aberration) of the projection optical system PL can be adjusted by either the temperature regulator 22b or the adjustment screw 22c. .
  • the adjustment by the temperature adjuster 22b can be controlled by the control unit 23, but the response is relatively slow.
  • adjustment with the adjusting screw 22c is relatively responsive, but requires manual operation by the operator. Therefore, in this embodiment, the adjustment with the adjustment screw 22c is performed at the time of manufacturing the projection optical system or the exposure apparatus, and the adjustment by the temperature adjuster 22b is projected at the time of regular or irregular maintenance of the exposure apparatus. This is done to correct for changes in the static optical characteristics of the optical system PL over time.
  • the adjusting mechanism 22 adjusts the static non-rotationally symmetric aberration of the projection optical system PL, but may be used to adjust the rotationally symmetric aberration of the projection optical system PL. .
  • the lens L2 The periphery of the lens is sandwiched in the vertical direction (Z direction), and the lens is You may use the mechanism which produces the stress which acts in the surface of L2.
  • an actuator for rotating the adjustment screw 22c is provided to control the rotation angle of the adjustment screw 22c. It may be configured to control via the
  • FIG. 4 is a diagram showing a configuration example of the temperature regulator 22b using the heat transport mechanism. As shown in FIG. 4, a plurality of heating / cooling sources 24 controlled by the control unit 23 are provided outside the projection optical system PL, and heat pipes from the heating / cooling sources 24 toward the end of the lens L2 are provided. 25 is arranged!
  • FIG. 4 there are eight power heating / cooling sources 24 and heat pipes 25 that are simplified in illustration, and each end of the heat pipe 25 is 8 around the lens L2 as in FIG. 3B. Placed in place.
  • the control unit 23 controls the heating / cooling source 24, so that the optical characteristics of the projection optical system PL can be adjusted in the same manner as the temperature adjuster 22b.
  • the configuration including the plurality of heating / cooling sources 24 is described as an example, but the configuration including one heating / cooling source in which eight heat pipes are connected to the outside of the projection optical system PL. It is also good.
  • the heating or cooling part of the lens L2 is changed by controlling the opening and closing of the flow path of each heat pipe.
  • the temperature regulator 22b and the adjusting screw 22c are arranged at the same position around the lens L2, and they may be arranged at different positions around the lens L2. The number of may be different. Furthermore, one of the temperature adjuster 22b and the adjustment screw 22c may be arranged around another lens different from the lens L2 in the vicinity of the pupil plane of the projection optical system PL. In addition, in order to adjust the static optical characteristics of the projection optical system PL, the adjusting mechanism 22 can include only one of the forces including both the temperature adjuster 22b and the adjusting screw 22c. [0047] [Non-exposure light irradiation mechanism 40]
  • the non-exposure light irradiation mechanism 40 for adjusting the dynamic optical characteristics (non-rotationally symmetric aberration) of the projection optical system PL will be described.
  • the non-exposure light irradiation mechanism 40 shown in FIG. 1 corrects non-rotationally symmetric aberration such as center astigmatism that occurs in the projection optical system PL when dipole illumination is performed, for example.
  • the non-exposure light irradiation mechanism 40 is used for correcting aberrations in a wavelength region different from the exposure light IL on the lens L1 near the pupil plane PP of the projection optical system PL.
  • Illumination light hereinafter referred to as “non-exposure light”) LB is irradiated.
  • the non-exposure light LB for example, infrared light having a wavelength of 10. emitted from a carbon dioxide laser (CO laser) is used as an example.
  • CO laser carbon dioxide laser
  • continuous light may be used as the CO laser.
  • This infrared light with a wavelength of 10.6 / z m
  • Projection optical system with high absorptivity in the UK Since almost all (preferably 90% or more) is absorbed by one lens in the PL, aberration is controlled without affecting other lenses. Therefore, there is an advantage that it is easy to use.
  • the non-exposure light LB irradiated to the lens L1 of the present embodiment is set so that 90% or more is absorbed.
  • the non-exposure light LB in addition to the above-mentioned infrared light, near-infrared light having a wavelength of about 1 ⁇ m emitted from a solid-state laser light such as a YAG laser, or a wavelength emitted from a semiconductor laser Infrared light of several meters can also be used. That is, as the light source that generates the non-exposure light LB, an optimum light source can be employed according to the material of the optical member (lens or the like) irradiated with the non-exposure light LB. In FIG. 1 and the like, the lens L1 may be a force-concave lens drawn like a convex lens.
  • the non-exposure light LB emitted from the light source system 41 is directed to a plurality (eight in this embodiment) of optical paths and photoelectric sensors 43 by the mirror optical system 42. It is branched into another optical path. A detection signal corresponding to the light amount of the non-exposure light LB detected by the photoelectric sensor 43 is fed back to the light source system 41.
  • the non-exposure light LB force of the two optical paths out of the plurality of optical paths LB force as the non-exposure light LBa and LBb via the two irradiation mechanisms 44a and 44b arranged so as to sandwich the projection optical system PL in the X direction.
  • FIG. 5 is a top view showing a detailed configuration example of the non-exposure light irradiation mechanism 40.
  • the light source system 41 of FIG. 1 includes a light source 41a and a control unit 41b.
  • the non-exposure light LB emitted from the light source 41a is either in a state in which the optical path of the non-exposure light LB is bent by 90 ° (closed state) or in a state in which the non-exposure light LB passes through as it is (open state).
  • Galvano mirrors 45g, 45c, 45e, 45a, 45h, 45d, 45f, and 45b as movable mirrors that can be switched at high speed to the photoelectric sensor 43, and the detection signal of the photoelectric sensor 43 is supplied to the control unit 41b ing.
  • Galvano mirrors 45a to 45h correspond to the mirror optical system 42 in FIG.
  • the control unit 41b controls the light emission timing and output of the light source 41a and the opening and closing of the galvano mirrors 45a to 45h according to control information from the main control system 20.
  • the non-exposure light LB whose optical path is sequentially bent by the eight galvanometer mirrors 45a to 45h is irradiated through the bundle of optical fibers 46a to 46h (or a metal tube or the like can be used). It is guided to ⁇ 44h.
  • Eight irradiation mechanisms 44a to 44h have the same configuration.
  • the irradiation mechanisms 44a and 44b are a condensing lens 47, a beam splitter 48 having a predetermined low reflectance, and a bundle of optical fibers or a relay lens system.
  • a light guide unit 49 having equal force, a condensing lens 51, and a holding frame 50 for fixing the condensing lens 47 and the light guide unit 49 to the beam splitter 48 are provided.
  • the non-exposure light LB is irradiated to the lens L1 in the projection optical system PL as non-exposure light LBa and LBb from the irradiation mechanisms 44a and 44b, respectively.
  • the first pair of irradiation mechanisms 44a and 44b and the second pair of irradiation mechanisms 44c and 44d are arranged to face each other so as to sandwich the projection optical system PL in the X direction and the Y direction, respectively. .
  • the third pair of irradiation mechanisms 44e and 44f and the fourth pair of irradiation mechanisms 44g and 44h are respectively arranged such that the irradiation mechanisms 44a and 44b and the irradiation mechanisms 44c and 44d are centered on the optical axis of the projection optical system PL. It is arranged at an angle rotated 45 ° clockwise. Then, the non-exposure light LB is irradiated from the irradiation mechanisms 44c to 44h to the lens L1 in the projection optical system PL as non-exposure light LBc to LBh, respectively.
  • the position, shape and size of the optical member irradiated with the non-exposure light LBa to L Bh and the irradiation area of the non-exposure light LBa to LBh on the optical member are as non-rotationally symmetric as possible through experiments and simulations. Aberrations (center astigmatism, etc.) are determined to be reduced.
  • photoelectric sensors 52a to 52h that respectively receive part of the non-exposure light reflected by the beam splitters 48 of the irradiation mechanisms 44a to 44h are provided, and detection of the eight photoelectric sensors 52a to 52h is provided. The signal is also supplied to the control unit 41b.
  • the control unit 41b can accurately monitor the light amounts of the non-exposure light LBa to LBh immediately before being irradiated from the irradiation mechanisms 44a to 44h to the lens L1 in the projection optical system PL by the detection signals of the photoelectric sensors 52a to 52h. Based on the monitoring result, each of the irradiation amounts of the non-exposure light LBa to LBh is controlled to a value instructed by the main control system 20, for example.
  • the length (optical path length) of the bundle of optical fibers 46a to 46h varies by measuring the irradiation amount of the non-exposure light LB by the photoelectric sensors 52a to 52h immediately before the projection optical system PL, The amount of non-exposure light LBa to LBh irradiated to the lens L1 can be accurately monitored without being affected by changes over time of the optical system or the like.
  • FIG. 6A and 6B are front views in which a part of the projection optical system PL is taken as a cross section.
  • the irradiation mechanisms 44a and 44b are inclined slightly diagonally downward in the openings Fa and Fb provided in the flange portion F of the lens barrel of the projection optical system PL, respectively, by directing the lens L1. It is arranged to do.
  • the non-exposure lights LBa and LBb emitted from the irradiation mechanisms 44a and 44b enter the lens L1 in a direction obliquely intersecting the optical path of the exposure light IL.
  • FIG. 6B is a modification of FIG. 6A.
  • the irradiation mechanisms 44a and 44b (the same applies to the other irradiation mechanisms 44c to 44h) are respectively provided for the lens barrels of the projection optical system PL.
  • the openings Fc and Fd provided in the flange part F tilt slightly upward toward the lens L1.
  • the bottom surface of the lens L1 may be illuminated with non-exposure light LBa, LBb. In this case, it is possible to further reduce the amount of leakage of the non-exposure light LBa to LBh from the wafer W side force of the projection optical system PL.
  • the non-exposure light irradiation mechanism 40 includes the light source 41a, the control unit 41b, the galvanometer mirrors 45a to 45h, the bundle of optical fibers 46a to 46h, the irradiation mechanisms 44a to 44h, the photoelectric sensors 52a to 52h, and the like. Is configured. For example, when the lens L1 is irradiated with only two non-exposure lights LBa and LBb in the X direction, the galvano mirrors 45a to 45h are all opened and opened (the state where the non-exposure light LB is allowed to pass).
  • the operation of closing the mirror 45a for a predetermined time (non-exposure light reflecting LB) and the operation of closing the galvano mirror 45b for a predetermined time may be repeated alternately! /. There is no effect on the aberration !, it is short enough! By switching the galvano mirror in time (for example, lmsec), the effect on the aberration can be eliminated. Further, since the non-exposure light LB is pulse light, the opening / closing operation of the galvanometer mirrors 45a to 45h may be performed in units of a predetermined number of pulses.
  • eight regions on the lens L1 can be illuminated with the non-exposure light LB.
  • four regions on the lens L1 in the X direction and the Y direction are used. Even if only this area can be illuminated with non-exposure light LB, most of the aberrations that occur in normal applications can be corrected.
  • a fixed mirror and a beam splitter are combined to divide the non-exposure light LB into 8 light beams, and the optical path of these light bundles is opened and closed using a shatter. Also good. In this configuration, a plurality of locations can be irradiated with non-exposure light LB simultaneously.
  • the non-exposure light irradiation mechanism 40 is a non-rotating pair of the projection optical system PL generated when the exposure light IL is irradiated onto the projection optical system PL. It is possible to adjust the characteristic aberration (dynamic optical characteristics).
  • the image formation characteristic correction mechanism 14, the adjustment mechanism 22, and the non-exposure light irradiation mechanism 40 provided for adjusting the optical characteristics of the projection optical system PL have been described above. Next, projection is performed using these. A method for adjusting the optical characteristics of the optical system PL will be described. Note that a method for adjusting the optical characteristics of the projection optical system PL using the imaging characteristic correction mechanism 14 is also disclosed in, for example, the above-mentioned Japanese Patent Laid-Open No. 4-134813. A method for adjusting the optical characteristics of the projection optical system PL by the non-exposure light irradiation mechanism 40 will be described.
  • FIGS. 7A, 7B, 7C, 8A, and 8B are diagrams for explaining the change in the shape of the lens that occurs when dipole illumination is performed.
  • the aperture stop 5a having two apertures separated in the direction corresponding to the X direction is disposed on the focal plane on the exit side of the second fly-eye lens 4, the main aperture formed on the reticle R
  • the pattern for transfer is shown in an enlarged view in Fig. 7A.
  • Line patterns that are elongated in the Y direction are arranged in the X direction (non-scanning direction) at a pitch that is approximately the resolution limit of the projection optical system PL.
  • Directional line 'and' space pattern hereinafter referred to as “L & S pattern”) PV.
  • a plurality of L & S patterns or the like which are usually larger than the L & S pattern PV and whose arrangement direction is the X direction and the Y direction (scanning direction) at the arrangement pitch are also formed.
  • the pupil plane PP of the projection optical system PL is symmetrical with respect to the X direction across the optical axis AX.
  • Illumination light IL illuminates two circular areas IRx.
  • the exposure light IL is usually low because the 0th-order light intensity is larger than the diffracted light intensity and the diffraction angle is small. Most of the (imaging beam) passes through the circular area IRx or its vicinity.
  • the temperature distribution of the lens LI is the highest in the two circular regions IRx that sandwich the optical axis in the X direction, and gradually decreases toward the surrounding region, and the lens L1 has a thermal expansion ( Heat deformation).
  • FIGS. 7C and 7D side views exaggerating the change of the lens L1 when viewed in the Y direction and the X direction are as shown in FIGS. 7C and 7D, respectively.
  • the surface shape of the lens L1 before the exposure light absorption is plane A
  • the thermally expanded surface B after the exposure light absorption is in a wide range in the direction along the X axis (Fig. 7C). Since two convex parts sandwiching the optical axis are formed, the refractive power decreases. In the direction along the Y axis (Fig. 7D), one refractive part is locally formed in the central part, and the refractive power increases.
  • Figure 9 shows the center astigmatism caused by dipole illumination.
  • the image plane of the projection optical system PL becomes a lower (one Z direction) image plane IV because the refractive power decreases with respect to the light beam opened in the X direction, and the light beam opened in the Y direction. Since the refractive power increases, the upper (+ Z) image plane is IH. Accordingly, center astigmatism ⁇ ⁇ that is astigmatism on the optical axis is generated.
  • the pupil plane ⁇ of the projection optical system PL is symmetrical in the Y direction across the optical axis AX.
  • the exposure light IL illuminates two circular areas IRy. At this time, even if various reticle patterns are arranged in the optical path of the exposure light IL, usually most of the exposure light IL (imaging light beam) passes through the circular region IRy and the vicinity thereof.
  • ⁇ 1st-order diffracted light from the L & S pattern PH having a pitch close to the resolution limit also passes through the circular region IRy or the vicinity thereof.
  • the image of the L & S pattern PH is projected onto the wafer W with high resolution.
  • the light amount distribution of the exposure light IL incident on the lens L1 in the vicinity of the pupil plane PP of the projection optical system PL of FIG. 1 is also substantially the light amount distribution of FIG. 8B. Therefore, when the exposure is continued, the temperature distribution of the lens L1 near the pupil plane PP becomes the highest in the two circular areas IRy that sandwich the optical axis in the Y direction, and gradually decreases toward the surrounding area. Depending on the distribution, the lens L1 expands thermally. Therefore, the image plane of the projection optical system PL is almost opposite to the case of FIGS. 7A, 7B, and 7C, and is close to the upper image plane IH because the refractive power increases for the light beam opened in the X direction.
  • center astigmatisms are non-rotationally symmetric aberrations, and other non-rotationally symmetric aberrations by dipole illumination (for example, orthogonal in a plane perpendicular to the optical axis of the projection optical system PL).
  • these non-rotationally symmetric aberrations cannot be substantially corrected by the imaging characteristic correction mechanism 14 in FIG.
  • the dynamic non-rotation symmetry of the projection optical system PL generated by the exposure light IL irradiation In order to correct various aberrations, a non-exposure light irradiation mechanism 40 is provided.
  • FIGS. 10A and 10B are diagrams for explaining an example of a method for correcting non-rotationally symmetric aberration of the projection optical system using the non-exposure light irradiation mechanism.
  • the optical axis AX on the pupil plane PP of the projection optical system PL is sandwiched symmetrically in the X direction.
  • the exposure light IL is irradiated to the two circular areas IRx, this is the optical axis on the lens L1.
  • the exposure light IL is irradiated to the region IRx that sandwiches the AX symmetrically in the X direction and the adjacent region.
  • FIG. 7B the optical axis AX on the pupil plane PP of the projection optical system PL is sandwiched symmetrically in the X direction.
  • the region IRx is a region obtained by rotating the region IRx by 90 ° around the optical axis AX.
  • Circular regions LRc and LRd that sandwich the optical axis AX symmetrically in the Y direction on the lens L1.
  • the shape and size of the irradiation region of the non-exposure light LBc, LBd (and other non-exposure light as well) is, for example, the position of the condensing lens 51 in the irradiation mechanisms 44c, 44d in FIG. It is also possible to change by making it movable in the axial direction.
  • the temperature distribution of the lens L1 becomes higher in the area IRx and the areas LRc and LRd, and gradually increases as the distance from the temperature distribution increases.
  • the distribution becomes lower.
  • 10A and 10B where the origin of the X and Y axes is the optical axis AX, a cross-sectional view along the non-scanning direction in the plane including the optical axes AX and X of the lens L1, and the optical axes AX and Y axes.
  • the cross-sectional view along the scanning direction in the plane including is shown exaggeratedly in FIG. 10B.
  • the thermal expansion of the lens L1 is almost the same as the cross-sectional shape in the non-scanning direction and the scanning direction, and the shape in which the refractive index distribution is in the central part and its left and right. It changes much more than other areas.
  • the deformation state of the lens L1 irradiated with the exposure light IL and the non-exposure light LBc, LBd is different in the non-scanning direction and the scanning direction compared to the deformation in FIGS. 7C and 7D when only the exposure light IL is illuminated.
  • the imaging characteristic correction mechanism 14 shown in FIG. 2 the imaging characteristic of the projection optical system PL can be strictly controlled.
  • the lens that irradiates the non-exposure light is a lens in the vicinity of the pupil plane of the projection optical system PL that is conjugate with the pupil plane of the illumination optical system ILS, such as the lens L1, the compensation of center astigmatism is achieved. The positive effect is increased. At this time, a plurality of lenses near the pupil plane may be irradiated with non-exposure light. Further, it is effective that the irradiation region including the exposure light IL and the non-exposure light LB on the optical member (L1) to be irradiated is as close to rotational symmetry as possible.
  • the position, shape, and size of the illumination area on the reticle R are changed by the field stop 9 to perform exposure on a plane conjugate with the image plane of the projection optical system PL.
  • Non-rotationally symmetric aberration may also occur when the position, cross-sectional shape, and size of the light IL are changed.
  • the distribution (density) of the reticle R pattern changes, and the distribution of the exposure light IL changes on the plane conjugate with the image plane of the projection optical system PL.
  • Non-rotationally symmetric aberrations may occur.
  • Such aberration can also be corrected by the non-exposure light irradiation mechanism 40 described above. That is, in the present embodiment, the static optical characteristics (non-rotationally symmetric optical characteristics) in the initial state of the projection optical system PL are adjusted using the adjusting mechanism 22, and the projection caused by the irradiation of the exposure light IL is performed.
  • the dynamic optical characteristics (non-rotationally symmetric aberration) of the optical system PL are applied to the illumination conditions specified by the illumination system aperture stop member 5 and the distribution of the exposure light IL on the plane conjugate with the image plane of the projection optical system PL. Adjust using the non-exposure light irradiation mechanism 40 accordingly.
  • FIG. 11 is a block diagram showing an internal configuration of the main control system 20 and a device that exchanges various signals with the main control system 20.
  • the main control system 20 includes an imaging characteristic calculation unit 31, an imaging characteristic control unit 32, an exposure amount control unit 33, a stage control unit 34, a Z tilt stage control unit 35, a controller 36, and a memory. Consists of 37.
  • the imaging characteristic calculation unit 31 uses the detection signals of the integrator sensor 7 and the reflection amount sensor 8 to detect from the reticle scale.
  • the integrated energy of the exposure light IL incident on the projection optical system PL and the integrated energy of the exposure light IL reflected by the wafer W and returning to the projection optical system PL are calculated.
  • This imaging characteristic calculation unit 31 receives information about the illumination conditions during exposure, information indicating the shape and size of the aperture of the field stop 9 from the controller 36, and characteristics of the reticle R (the size of the aperture and Information indicating the pattern distribution is also supplied. In addition, the imaging characteristic calculation unit 31 uses information such as illumination conditions, accumulated energy of the exposure light IL, and ambient atmospheric pressure and temperature supplied from the environmental sensor 12 in the imaging characteristics of the projection optical system PL. The amount of fluctuation of the rotationally symmetric aberration component and the non-rotationally symmetric aberration component is calculated. Here, when the imaging characteristic calculation unit 31 calculates the fluctuation amount of the non-rotationally symmetric aberration component in the imaging characteristic of the projection optical system PL, the transfer function read from the memory 37 by the controller 36. (Details will be described later).
  • the imaging characteristic control unit 32 Based on the dynamic aberration component variation amount of the projection optical system PL calculated by the imaging characteristic calculation unit 31, the imaging characteristic control unit 32 performs the imaging characteristic correction mechanism 14 via the control unit 15. Further, by controlling the operation of the non-exposure light irradiation mechanism 40, the optical characteristics of the projection optical system PL are adjusted to a desired state.
  • the control unit 15 3 is controlled based on the control information from the imaging characteristic control unit 32 in the main control system 20.
  • the position of each of the five lenses L11 to L15 in the direction of the optical axis and about two orthogonal axes perpendicular to the optical axis Independently control the inclination angle. This corrects a predetermined rotationally symmetric aberration in the imaging characteristics of the projection optical system PL.
  • the non-exposure light irradiation mechanism 40 when adjusting the optical characteristics of the projection optical system PL by the non-exposure light irradiation mechanism 40, the irradiation or non-irradiation of the non-exposure light LBa to LBh to the lens L1 is controlled. By controlling the non-exposure light irradiation mechanism 40, a predetermined non-rotationally symmetric aberration in the imaging characteristics of the projection optical system PL is corrected.
  • the exposure amount control unit 33 indirectly controls the exposure energy on the wafer W by using the detection signal of the integrator sensor 7 and the optical transmittance of the optical system from the beam splitter 6 to the wafer W measured in advance. Calculate automatically.
  • the transmittance of the optical system from the beam splitter 6 to the wafer W is calculated by projecting the light receiving surface of the dose sensor 19 before the exposure is started or periodically. It is obtained by irradiating the exposure light IL while moving to the exposure area of L, and dividing the detection signal of the dose sensor 19 by the detection signal of the integrator sensor 7.
  • the exposure control unit 33 controls the output of the exposure light source 1 so that the integrated exposure energy on the wafer W falls within the target range, and uses a dimming mechanism (not shown) as necessary.
  • the pulse energy of exposure light IL is controlled stepwise. Further, the rotation angle of the drive motor 5c that rotates the illumination system aperture stop member 5 is controlled by the control signal from the controller 36, and the size of the aperture of the field stop 9 is further controlled.
  • the stage control unit 34 controls the position and speed of the reticle stage RST based on measurement values of a laser interferometer (not shown) provided on the reticle stage RST and various control information.
  • the position and speed of wafer stage WST are controlled based on the measurement values of a laser interferometer (not shown) provided on wafer stage WST and various control information.
  • the Z tilt stage control unit 35 is configured so that the wafer surface is always focused on the image plane of the projection optical system PL based on the detection information of the reticle side AF sensor 16 and the wafer side AF sensor 18. Drive 17
  • the controller 36 controls all of the exposure apparatus by controlling the imaging characteristic calculation unit 31, the imaging characteristic control unit 32, the exposure amount control unit 33, the stage control unit 34, and the Z tilt stage control unit 35. Control physical movements.
  • the memory 37 stores a transfer function indicating the relationship between the energy of light incident on the projection optical system PL and the amount of variation in the optical characteristics of the projection optical system PL.
  • the transfer function shown in (1) above is a transfer function indicating the amount of force fluctuation when the projection optical system PL is irradiated with the exposure light IL. Change the variable Q in the above equation (1) according to the illumination conditions defined by the illumination system aperture stop member 5 and the cross-sectional shape and size of the exposure light IL in the conjugate plane of the image plane of the projection optical system PL. Thus, the focus fluctuation amount of the projection optical system PL can be obtained.
  • FIG. 12 is a diagram showing a typical transfer function with respect to the focus fluctuation amount. As shown in FIG.
  • the focus fluctuation amount greatly fluctuates with the start of exposure light IL irradiation, but as the exposure light IL irradiation time becomes longer, the change rate of the fluctuation amount gradually becomes closer to the fluctuation amount. Change.
  • the transfer function for the focus fluctuation amount the same transfer function is used to calculate the amount of fluctuation for the rotationally symmetric aberration such as force magnification and the non-rotationally symmetric aberration such as center astigmatism. Can be sought.
  • the static optical characteristics (non-rotationally symmetric aberration) of the projection optical system PL are already adjusted within a predetermined allowable range using at least one of the temperature adjuster 22b and the adjusting screw 22c of the adjusting mechanism 22.
  • the static optical characteristics of the projection optical system PL can be measured using the aberration measuring device 21 and the like, and adjustment by the adjusting mechanism 22 can be performed based on the result.
  • the controller 36 outputs information on the illumination conditions set for the imaging characteristic calculation unit 31, information on the shape and size of the aperture of the field stop 9, and information on the characteristics of the reticle R. .
  • the exposure amount control unit 33 outputs a control signal to the exposure light source 1 to generate the exposure light IL.
  • the detection signal of the dose sensor 19 and the detection signal of the integrator sensor 7 are obtained, and the transmittance of the optical system from the beam splitter 6 to the wafer W is obtained from these detection signals.
  • the controller 36 outputs a control signal to a reticle loader (not shown) to convey a predetermined reticle R and hold it on the reticle stage RST, and outputs a control signal to a wafer loader (not shown) to convey the wafer W. And hold it on the wafer stage WST.
  • stage control unit 34 outputs a control signal to each of reticle stage RST and wafer stage WST, for example, starts acceleration of reticle stage RST in the + Y direction, and at the same time, wafer stage Start accelerating WST in the Y direction.
  • the controller 36 controls the exposure control 33 to expose from the exposure light source 1. Light IL is emitted.
  • the exposure light emitted from the exposure light source 1 passes through the first fly-eye lens 2, the vibrating mirror 3, the second fly-eye lens 4 and the like in order, and then the opening formed in the illumination system aperture stop member 5 It passes through the aperture 5a.
  • the exposure light IL transmitted through the aperture stop 5a is shaped into a slit by the field stop 9 through the beam splitter 6, deflected in the Z direction by the mirror 10, and then irradiated onto the reticle R through the condenser lens 11. Is done.
  • the exposure light IL is shaped by the aperture stop 5a, and the irradiation area on the reticle R is long in the X direction and has a slit shape.
  • the exposure light transmitted through the reticle R is irradiated onto the shot area to be exposed on the wafer W via the projection optical system PL, whereby a part of the pattern formed on the reticle R is wafered. W is transferred to a part of the shot area to be exposed. In this way, each shot area on the wafer W is sequentially exposed.
  • detection signals are output from the integrator sensor 7 and the reflection amount sensor 8, and the imaging characteristic calculation unit 31 uses the detection signals of the integrator sensor 7 and the reflection amount sensor 8 to Calculate the integrated energy of the exposure light IL that is incident on the projection optical system PL from the reticle scale, and the integrated energy of the exposure light IL that is reflected by the wafer W and returns to the projection optical system PL.
  • the imaging characteristic calculation unit 31 receives the illumination condition under exposure from the controller 36. Information, information indicating the state of the field stop 9, and information indicating the characteristics of the reticle R are supplied, and a transfer function stored in the memory 37 is read and supplied.
  • the image characteristic calculation unit 31 includes information on the above illumination conditions, information indicating the state of the field stop 9, information indicating the characteristics of the reticle R, accumulated energy of the exposure light IL, and surroundings supplied from the environment sensor 12. Using information such as atmospheric pressure and temperature and the transfer function, the amount of fluctuation of the rotationally symmetric aberration component and the non-rotationally symmetric aberration component in the imaging characteristics of the projection optical system PL is calculated. The variation amount of the aberration component of the projection optical system PL is calculated using the above-described equation (1). This calculation result is output from the imaging characteristic calculation unit 31 to the controller 36.
  • the controller 36 outputs the calculation result of the imaging characteristic calculation unit 31 to the imaging characteristic control unit 32.
  • the imaging characteristic control unit 32 controls the operation of the imaging characteristic correction mechanism 14 via the control unit 15 based on the calculation result output from the controller 36 so that a desired imaging characteristic is always obtained.
  • the fluctuation of the rotationally symmetric aberration of the projection optical system PL is suppressed.
  • the correction of the non-rotationally symmetric aberration of the projection optical system PL by the irradiation of the exposure light IL is performed by the non-exposure light irradiation mechanism 40.
  • the rotational symmetric aberration and the non-rotation symmetric aberration of the projection optical system PL are applied to the illumination condition and the exposure on the conjugate plane of the image plane of the projection optical system PL. It can be precisely controlled according to the distribution of light IL.
  • FIG. 13 is a diagram for explaining an example of a table stored in the memory 37.
  • the adjustment amount of the optical characteristics of the projection optical system PL changes according to the size (area) of the aperture of the field stop 9 provided in the illumination optical system ILS.
  • the relationship between the aperture size of the field stop 9 and the adjustment amount of the optical characteristics of the projection optical system PL is shown as a curve AJ in FIG.
  • the relationship between the size of the aperture of the field stop 9 shown in FIG. 13 and the adjustment amount of the optical characteristics of the projection optical system PL is merely an example, and may be a straight line!
  • the size of the aperture of the field stop 9 is divided into a plurality of areas, a representative adjustment amount in each section is set, and information indicating the size of the aperture of the field stop 9 and a representative Adjustment The quantity is stored in association with the table.
  • the size of the aperture of the field stop 9 is divided into five sections R1 to R5, and typical adjustments g [l to J5 are set for each of the sections R1 to R5. Therefore, for example, the maximum value and the minimum value of each of the sections R1 to R5 and the adjustments 1 to J5 are stored in the table in association with each other.
  • an average value of the curve AJ included in each of the sections R1 to R5 is used.
  • the average value when the curve AJ included in each section R1 to R5 is close to a straight line, or the intermediate value between the maximum and minimum values of the curve AJ included in each section R1 to R5 may be used. it can.
  • the size of the aperture size of the field stop 9 is not limited to five, and can be appropriately determined in consideration of a change in the size of the aperture of the field stop 9.
  • the controller 36 reads the table from the memory 37, reads the adjustment amount of the optical characteristic of the projection optical system PL corresponding to the setting, and controls the adjustment amount to the imaging characteristic control. Output to part 32.
  • the imaging characteristic control unit 32 outputs a control signal for adjusting the optical characteristics of the projection optical system PL according to the adjustment amount output from the controller 36 to the control unit 15 and the non-exposure light irradiation mechanism 40 to output the projection optical system. Adjust the optical characteristics of the PL.
  • the optical characteristics (rotationally symmetric aberration and non-rotationally symmetric aberration) with respect to the projection optical system PL are adjusted according to the cross-sectional shape and size of the exposure light IL.
  • the force described in the table of the adjustment amount of the optical characteristics of the projection optical system PL corresponding to the size (area) of the aperture of the field stop 9 is only the size of the aperture of the field stop 9
  • a table corresponding to the position and shape of the aperture of the field stop 9 may be provided.
  • a table corresponding to the length of the aperture of the field stop 9 in the longitudinal direction or the length of the aperture in the direction corresponding to the X direction and the length in the direction corresponding to the Y direction may be provided.
  • the adjustment amount table stored in the memory 37 can be prepared for each of various conditions determined by the setting of the field stop 9, the setting of the illumination system aperture stop member 5, the characteristics of the reticle R, etc. wear.
  • the adjustment mechanism 22 for adjusting the static optical characteristics (non-rotationally symmetric aberration) of the projection optical system PL, and the dynamics of the projection optical system PL The non-exposure light irradiation mechanism 40 that adjusts the optical characteristics (rotationally symmetric aberration) is provided, so that the amount of dynamic non-rotationally symmetric aberration adjustment by the non-exposure light irradiation mechanism 40 can be reduced. Therefore, the dynamic non-rotation aberration of the projection optical system PL can be adjusted more precisely.
  • the exposure apparatus of the present embodiment in consideration of the distribution of the exposure light IL (the position, the cross-sectional shape, and the size of the exposure light IL) in the plane conjugate with the image plane of the projection optical system PL, that is, Since the optical characteristics of the projection optical system PL are adjusted in consideration of at least one of the setting state of the aperture of the field stop 9 and the characteristics of the reticle, the optical characteristics of the projection optical system PL are controlled to a desired state.
  • the pattern of reticle R can be accurately projected.
  • the exposure apparatus and method according to the embodiment of the present invention have been described above.
  • the present invention is not limited to the above embodiment, and can be freely changed within the scope of the present invention.
  • the exposure apparatus of the above-described embodiment includes an adjustment mechanism that adjusts the static non-rotation symmetric aberration of the projection optical system PL and an adjustment mechanism that adjusts the dynamic non-rotation symmetric aberration, and a projection optical system.
  • the aberration to be rotated of the projection optical system PL is not rotationally symmetric. You can adjust the difference, but you can also adjust either one.
  • the case where the optical characteristic of the projection optical system PL is adjusted using a transfer function or a table has been described.
  • the non-rotation of the PL of the projection optical system is performed using the aberration measuring device 21 shown in FIG. It is also possible to measure the symmetric aberration and adjust the optical characteristics of the projection optical system PL using the measurement result.
  • the adjustment mechanism 22 and the non-exposure light irradiation mechanism 40 perform the predetermined adjustment on different lenses, but the same adjustment may be performed on the same lens. .
  • the force non-rotationally symmetric difference described above is mainly used for correcting the center astigmatism as the non-rotationally symmetric aberration of the projection optical system.
  • other non-rotationally symmetric aberrations such as orthogonal projection magnification difference (XY magnification difference) and image shift may occur. Therefore, the optical member to be adjusted by the adjusting mechanism 22 can be determined to have an optimum experiment or simulation power according to the type of non-rotationally symmetric aberration.
  • non-exposure light irradiation mechanism The optical member to be adjusted 40 and the irradiation position, shape, and size of the non-exposure light LB on the optical member can be set as appropriate according to the type of aberration that is not rotated. For example, in the case of adjusting the non-rotationally symmetric XY magnification difference described above, the optical element relatively close to the reticle R among the plurality of optical members of the projection optical system PL, or an optical element close to Weno or W Is preferably selected.
  • the non-exposure light irradiation mechanism 40 may be used for adjusting the rotationally symmetric aberration of the projection optical system PL.
  • a higher-order that is likely to occur when using a small ⁇ illumination method that reduces the ⁇ value that represents the ratio between the numerical aperture of the projection optical system PL and the numerical aperture of the illumination optical system ILS for example, less than 0.4.
  • the rotationally symmetric aberration can be corrected satisfactorily using the non-exposure light irradiation mechanism 40.
  • the adjustment mechanism 22 adjusts the static optical characteristics of the projection optical system PL
  • the non-exposure light irradiation mechanism 40 adjusts the dynamic optical characteristics of the projection optical system PL.
  • the adjustment mechanism 22 may adjust the dynamic optical characteristics of the projection optical system PL
  • the non-exposure light irradiation mechanism 40 may adjust the static optical characteristics of the projection optical system PL. You may do it. That is, the adjustment mechanism for adjusting the static non-rotation symmetric aberration of the projection optical system PL and the adjustment mechanism for adjusting the dynamic non-rotation symmetric aberration are not limited to the above-described embodiments, and the heating action, the cooling action, Various methods using an external force action or the like can be appropriately selected or combined.
  • the step “and” repeat that collectively transfers the pattern of the force reticle described as an example in which the present invention is applied to the exposure apparatus of the step “and” scan method.
  • the present invention can also be applied to an exposure apparatus of a type (so-called stepper).
  • the present invention is applied to the projection optical system including the force refraction system and the reflection system described using the projection optical system PL of the refraction system, and the projection optical system having only the power of the reflection system. Can do.
  • the shape of the illumination area (exposure area) of the exposure light IL is not limited to a rectangle, and may be, for example, an arc.
  • the exposure apparatus of the present invention is an exposure apparatus that is used for manufacturing a semiconductor element to transfer a device pattern onto a semiconductor substrate, and is used for manufacturing a liquid crystal display element to transfer a circuit pattern onto a glass plate.
  • Exposure apparatus used to manufacture thin film magnetic heads, exposure apparatuses that transfer device patterns onto ceramic wafers, and image sensors such as CCDs The present invention can also be applied to an exposure apparatus or the like used for manufacturing the above.
  • FIG. 14 is a flow chart showing a part of a manufacturing process for manufacturing a semiconductor device as a micro device.
  • step S10 design step
  • step S 11 mask manufacturing step
  • step S 12 wafer manufacturing step
  • a wafer is manufactured using a material such as silicon.
  • step S13 wafer processing step
  • step S 14 device assembly step
  • step S 14 device assembly step
  • step S14 includes a dicing process, a bonding process, a packaging process (chip encapsulation), and the like as necessary.
  • step S 15 inspection step
  • inspections such as an operation confirmation test and a durability test of the microdevice fabricated in step S 14 are performed. After these steps, the microdevice is completed and shipped.
  • FIG. 15 is a diagram showing an example of a detailed flow of step S13 in FIG.
  • step S21 oxidation step
  • step S2 2 CVD step
  • step S23 electrode formation step
  • step S 24 ion implantation step
  • ions are implanted into the wafer.
  • step S25 resist formation step
  • step S26 Exposure In step (2)
  • step S26 Exposure In step (2)
  • step S27 development process
  • step S28 etching step
  • step S29 resist removal step
  • step S26 the optical characteristics of the projection optical system PL provided in the exposure apparatus are adjusted, and formed on the reticle R.
  • the pattern is transferred onto Ueno, W. Therefore, the optical characteristics of the projection optical system PL are adjusted according to the cross-sectional shape and size of the exposure light IL incident on the plane conjugate with the image plane of the projection optical system PL. As a result, manufacturing defects can be reduced and devices can be manufactured with high yield.
  • the present invention relates to an immersion exposure apparatus that locally fills a space between the projection optical system PL and the wafer W as disclosed in, for example, International Publication (WO) No. 99Z49504.
  • An immersion exposure apparatus for moving a stage holding a substrate to be exposed as disclosed in Japanese Patent Laid-Open No. 6-124873 in a liquid tank, a stage as disclosed in Japanese Patent Laid-Open No. 10-303114 The present invention can be applied to any exposure apparatus of a liquid immersion optical apparatus in which a liquid tank having a predetermined depth is formed thereon and a substrate is held therein.

Abstract

L’invention concerne un appareil d’exposition ou similaire qui corrige avec efficacité un composant d’aberration asymétrique en rotation généré dans un système optique de projection. L’appareil d’exposition comprend des mécanismes d'ajustement (40, etc.) pour ajuster les caractéristiques optiques asymétriques dynamiques de rotation du système optique de projection (PL) et des mécanismes d'ajustement (22, etc.) afin d'ajuster les caractéristiques optiques asymétriques statiques de rotation du système optique de projection (PL). Un système de commande principal (20) modifie une quantité d'ajustement des mécanismes d'ajustement (40, etc.) qui ajustent les caractéristiques optiques du système optique de projection (PL) selon la forme en coupe transversale et les dimensions de la lumière d’exposition (IL) sur un plan couplé avec un plan d’image du système optique de projection (PL).
PCT/JP2005/015800 2004-08-31 2005-08-30 Appareil d’exposition et procédé pour la fabrication d’un dispositif WO2006025408A1 (fr)

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JP2011520240A (ja) * 2007-08-24 2011-07-14 カール・ツァイス・エスエムティー・ゲーエムベーハー 制御可能な光学素子、熱アクチュエータによる光学素子の操作方法および半導体リソグラフィのための投影露光装置
US8508854B2 (en) 2006-09-21 2013-08-13 Carl Zeiss Smt Gmbh Optical element and method
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US11474439B2 (en) 2019-06-25 2022-10-18 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and method of manufacturing article
US11640119B2 (en) 2019-09-19 2023-05-02 Canon Kabushiki Kaisha Exposure method, exposure apparatus, article manufacturing method, and method of manufacturing semiconductor device

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US8508854B2 (en) 2006-09-21 2013-08-13 Carl Zeiss Smt Gmbh Optical element and method
US8891172B2 (en) 2006-09-21 2014-11-18 Carl Zeiss Smt Gmbh Optical element and method
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US7903234B2 (en) 2006-11-27 2011-03-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US10054786B2 (en) 2007-03-27 2018-08-21 Carl Zeiss Smt Gmbh Correction of optical elements by correction light irradiated in a flat manner
US8760744B2 (en) 2007-03-27 2014-06-24 Carl Zeiss Smt Gmbh Correction of optical elements by correction light irradiated in a flat manner
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US9366857B2 (en) 2007-03-27 2016-06-14 Carl Zeiss Smt Gmbh Correction of optical elements by correction light irradiated in a flat manner
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WO2010098299A1 (fr) * 2009-02-24 2010-09-02 株式会社ニコン Dispositif de retenue d'élément optique, système optique et dispositif d'exposition
JP2015515134A (ja) * 2012-04-18 2015-05-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ装置及びそのような装置において光学波面を変更する方法
US10423082B2 (en) 2012-04-18 2019-09-24 Carl Zeiss Smt Gmbh Microlithographic apparatus and method of changing an optical wavefront in such an apparatus
US11474439B2 (en) 2019-06-25 2022-10-18 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and method of manufacturing article
US11640119B2 (en) 2019-09-19 2023-05-02 Canon Kabushiki Kaisha Exposure method, exposure apparatus, article manufacturing method, and method of manufacturing semiconductor device

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