WO2006025408A1 - Exposure apparatus and device manufacturing method - Google Patents

Exposure apparatus and device manufacturing method Download PDF

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Publication number
WO2006025408A1
WO2006025408A1 PCT/JP2005/015800 JP2005015800W WO2006025408A1 WO 2006025408 A1 WO2006025408 A1 WO 2006025408A1 JP 2005015800 W JP2005015800 W JP 2005015800W WO 2006025408 A1 WO2006025408 A1 WO 2006025408A1
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WO
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Patent type
Prior art keywords
optical system
projection optical
non
exposure apparatus
exposure light
Prior art date
Application number
PCT/JP2005/015800
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French (fr)
Japanese (ja)
Inventor
Yusaku Uehara
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Nikon Corporation
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70258Projection system adjustment, alignment during assembly of projection system
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B27/00Other optical systems; Other optical apparatus
    • G02B27/0025Other optical systems; Other optical apparatus for optical correction, e.g. distorsion, aberration
    • G02B27/0068Other optical systems; Other optical apparatus for optical correction, e.g. distorsion, aberration having means for controlling the degree of correction, e.g. using phase modulators, movable elements

Abstract

An exposure apparatus or the like which efficiently corrects a rotation asymmetrical aberration component generated in a projection optical system. The exposure apparatus is provided with adjusting mechanisms (40, etc.) for adjusting dynamic rotation asymmetrical optical characteristics of the projection optical system (PL) and adjusting mechanisms (22, etc.) for adjusting static rotation asymmetrical optical characteristics of the projection optical system (PL). A main control system (20) changes an adjusting quantity of the adjusting mechanisms (40, etc.) which adjust the optical characteristics of the projection optical system (PL) in accordance with the cross section shape and sizes of exposure light (IL) on a plane coupled to an image plane of the projection optical system (PL).

Description

Specification

Exposure apparatus and device manufacturing method

Technical field

[0001] The present invention relates to an exposure apparatus for transferring onto a substrate a pattern of a mask through a projection optical system, and a method of manufacturing a device using the exposure apparatus.

Priority is claimed on Japanese Patent Application No. 2004- 251877, filed on Aug. 31, 2004, which is incorporated herein by reference.

BACKGROUND

[0002] In the semiconductor device, a liquid crystal display device, an imaging device (CCD (Charge Coupled Device), etc.), in manufacturing a device such as a thin-film magnetic head, the photoresist a pattern of a reticle as a mask and the substrate is coated to transfer into each shot area on the wafer (or glass plate) that is, the projection exposure apparatus such as Sutetsupa are used. Contact Itewa a projection exposure apparatus, the irradiation amount and surrounding air pressure changes in the exposure light, the imaging characteristics of the projection optical system is changed. Therefore, in order to maintain the image forming characteristics in a desired state, the projection exposure apparatus, for example, I child stranded 〖be located or control the attitude (inclination) of a portion of optical members constituting the projection optical system, the imaging characteristic correction mechanism for correcting the imaging characteristics is provided. Imaging properties that can be corrected by conventional imaging characteristic correction mechanism, low rotational symmetry, such as distortion and magnification?, Which is a component of order.

[0003] Incidentally, you!, Te is the recent exposure apparatus, the order to increase the resolution for a particular pattern, Tokoroiwa zone illumination, the area of ​​the four positions on the pupil plane of the quadrupole illumination (illumination optical system 2 such illumination method) for the next light source, illumination condition the area including the optical axis on the pupil plane of the illumination optical system exposure light does not pass through the opportunity is used are many summer. When using a force hunt lighting conditions, the optical member in the vicinity of the pupil plane in the projection projection optical system will and this exposure light is illuminated in a state of incomplete toner substantially. The projection for rather large area of ​​the Nag transfer can be patterned possible to increase the size of the optical system, are recently also frequently used a projection exposure apparatus of the scanning exposure type such as scanning scan Tetsu pa. For scanning exposure type, the reticle and short side direction of the scanning direction, to be illuminated by the illumination area eg rectangular shape, the optical member near the reticle and the wafer in the projection optical system, a mainly non-rotationally symmetric area is to be illuminated in the exposure light.

[0004] In such an exposure apparatus, because there is a possibility that variations in the high-order variation and non-rotationally symmetric aberration of high order component such as spherical aberration of the imaging characteristics of the projection optical system occurs, like this Patent Document 1 projection exposure apparatus is less than that so as to suppress aberration variation, proposed in Patent Document 2.

Patent Document 1: JP-10 64 790 discloses

Patent Document 2: JP-10 50 585 discloses

Disclosure of the Invention

Problems that the Invention is to you'll solve

[0005] Incidentally, in recent years, for example in the case so as to transfer mainly including reticle pattern predetermined line 'and' space patterns, only two areas which sandwich the optical axis on the pupil plane of the illumination system may dipole illumination for a secondary light source (dipole illumination) is used. Thus the dipole illumination has become rotationally asymmetric light intensity distribution is larger than the 4-pole illumination, astigmatism on the optical axis is a non-rotationally symmetric aberration component in the projected image (hereinafter, "center one astigmatic Teizumu "hereinafter) is generated. Further, also occurs non-rotationally symmetric aberration variation other than the center astigmatic Te ism by dipole illumination.

[0006] Further, in recent years, and the shape and size in a single exposure apparatus has summer often different devices are manufactured, significantly changing the size and shape of the illumination area on the reticle have enhanced opportunity for exposure process is performed, depending on the size and shape of the illumination area on the reticle situation where Mau optical characteristics of the projection optical system is greater than a predetermined allowable range occurs.

[0007] The present invention has been made in view of the above circumstances, and aims to provide an exposure apparatus which can maintain the optical characteristics of the projection optical system to a desired state, and a device manufacturing method using the exposure apparatus to. In particular, it is an object to provide a method of manufacturing a device using a non-rotationally symmetric aberration component produced by the projection optical system can be efficiently corrected exposure apparatus, and the exposure apparatus.

Means for Solving the Problems

[0008] The present invention adopts the following constructions corresponding to respective drawings as illustrated in embodiments. And 伹, parenthesized reference numerals affixed to respective elements merely exemplify the elements by way of example, not be construed as constituting limit the respective elements.

In order to solve the above problems, an exposure apparatus of the present invention, the illumination light (IL) illumination optical system for morphism light of the mask (R) and (ILS), the image of the pattern of the mask on the substrate (W) in the exposure apparatus and a projection projection optical system (PL) for projecting the projection optical system that adjust adjuster optical properties of (14, 22, 40), in the conjugate plane of the image plane of the projection optical system a setting device (9) for setting at least one of the cross-sectional shape and size of the illumination light, according to the cross-sectional shape and size of the set the illumination light by the setting equipment, the projection by the adjusting device It is a feature that a control device for controlling the adjustment of the optical characteristics of the optical system (20).

According to the invention, the adjustment of the optical characteristics of the projection optical system is performed in accordance with the cross-sectional shape and size of the illumination light in the conjugate plane of the image plane of the projection optical system.

In order to solve the above problems, an exposure apparatus of the present invention, an illumination optical system for irradiating illumination light (IL) on the mask (R) and (ILS), the image of the pattern of the mask substrate (W) on non-rotating in an exposure apparatus comprising a projection optical system (PL) you projections, in the first and the adjusting mechanism (22), the projection optical system to adjust the static optical properties of the non-rotationally symmetric in the projection optical system It is characterized in that it comprises a second adjusting mechanism for adjusting the dynamic optical properties of symmetry (40).

According to the invention, the static optical science properties of the non-rotationally symmetrical in the projection optical system by the first adjusting mechanism is adjusted, the dynamic optical properties of the non-rotationally symmetric in the projection optical system by the second adjustment mechanism is adjusted It is.

Device manufacturing method of the present invention, Ru is characterized in that it comprises a step (S46) for transferring a pattern of the device on the object body (W) by using the above-described exposure apparatus.

Effect of the invention

According to the present invention, it is possible to maintain the optical characteristics of the projection optical system to a desired state. Further, it is possible to perform high device production of yield Mari by using an exposure apparatus that the optical characteristics of the projection optical system can be maintained in the desired state.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing a schematic arrangement of an exposure apparatus according to an embodiment of the present invention.

It is a diagram illustrating an example of FIG. 2 imaging characteristic correction mechanism.

It is a sectional view showing a configuration example of FIG. 3A] adjusting mechanism.

Is a top view showing a configuration example of FIG. 3B] adjusting mechanism.

It is a diagram illustrating another configuration example of FIG. 4 temperature regulator.

Is a diagram illustrating a configuration example of a temperature regulator with FIG. 5 heat transport mechanism.

[FIG 6A] is a front view of a cross-section a portion of the projection optical system.

[FIG 6B] is a front view of a cross-section a portion of the projection optical system.

It is a diagram for explaining the change in shape of the lens generated when performing the FIG 7A] dipole illumination.

It is a diagram for explaining the change in shape of the lens generated when performing the FIG 7B] dipole illumination.

It is a diagram for explaining the change in shape of the lens generated when performing the FIG 7C] dipole illumination.

It is a diagram for explaining the change in shape of the lens generated when performing the FIG 7D] dipole illumination.

It is a diagram for explaining the change in shape of the lens generated when performing the FIG 8A] dipole illumination.

It is a diagram for explaining the change in shape of the lens generated when performing the FIG 8B] dipole illumination.

9 is a diagram showing the center astigmatic te ism caused by dipole illumination.

Is a diagram for explaining an example of a method for correcting rotationally asymmetric aberration of the projection optical system using the FIG. 10A] non-exposure light irradiation mechanism.

It is a diagram for explaining an example of a method for correcting rotationally asymmetric aberration of the projection optical system using the FIG. 10B] non-exposure light irradiation mechanism.

11 is a block diagram showing the internal structure, and a device for exchanging the main control system and the various signals of the main control system.

It is a diagram illustrating a typical transfer function for [12] the focus variation. 13 is a diagram for explaining an example of a table stored in the memory.

14 is a flowchart diagram showing a part of a process of manufacturing the semiconductor device as a microdevice.

Is a diagram illustrating an example of a detailed flow of step S 13 in FIG. 15 FIG. 14.

DESCRIPTION OF SYMBOLS

[0011] 9 field stop 14 imaging characteristic correction mechanism 20 main control system 22 adjusting mechanism 37 memory 40 non-exposure light irradiation mechanism IL exposure light (illumination light) ILS illumination optical system PL projection optical system R reticle (mask) W wafer ( substrate, object)

BEST MODE FOR CARRYING OUT THE INVENTION

[0012] Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail.

[0013] [Exposure Apparatus]

Figure 1 is a diagram showing a schematic arrangement of an exposure apparatus according to an embodiment of the present invention. Figure 1 〖This indicates exposure apparatus Exiled a while relatively moving the © E wafer W as a reticle R and the substrate as a mask with respect to the projection optical system PL, is formed on the reticle R pattern onto a wafer W it is a scanning exposure type exposure apparatus of the step 'and' scan system for performing the next transfer.

[0014] In the following description, if necessary an XYZ orthogonal coordinate system in the figure, with reference to the XYZ orthogonal coordinate system for the positional relationship between the respective members will be described. X YZ orthogonal coordinate system shown in Figure 1, X-axis and Y-axis are set to be substantially parallel to the surface of the wafer W, is set in a direction substantially perpendicular to the Z Jikugau wafer W surface there. XYZ coordinate system in the figure, actually the XY plane is set in a plane parallel to the horizontal plane, Z-axis is set vertically. Further, the direction (run 查 direction) for synchronously moving reticle R and wafer W in the present embodiment is set to the Y direction Ru.

[0015] exposure apparatus shown in FIG. 1 includes an exposure light source 1, the illumination optical system ILS, a reticle stage RST, projection projection optical system PL, the wafer stage WST, and the main control system 20. The exposure light source 1 is a KrF excimer laser source For example (wavelength 247 nm). As the exposure light source 1, ArF E excimer lasers sources (wavelength 193 nm), F a laser light source (wavelength 157 nm), Kr laser light source (

twenty two

Wavelength 146 nm), Ar laser light source (wavelength 126 nm) or the like ultraviolet laser light source, a YAG laser

2

Harmonic generating light source, a harmonic generator of a solid-state laser (semiconductor laser or the like), or mercury lamp (i-ray, etc.) and the like can also be used.

[0016] Pulse emitting the exposure light IL from the exposure light source 1 at the time of exposure, the cross-sectional shape through a beam shaping optical system (not shown) or the like is shaped into a predetermined shape, optical 'integrator (Interview - Fomaiza or homogenizer) as the and enters a first fly-eye lens 2, the illuminance distribution is made uniform. The exposure light IL emitted from the first fly-eye lens 2 is incident on the second fly's eye's 4 as an optical 'integrator through Rirere lens and a vibrating mirror 3 not shown, the illuminance distribution is more uniform . Oscillating mirror 3, reduction of speckle is a laser beam exposure light IL, and is used for the reduction of interference fringes caused by the fly-eye lens. Instead of the fly-eye lens 2, 4, diffractive optical element (DOE: Dilfractive Optical Element) or an internal reflection type integrator (a rod lens, etc.) and the like may also be used.

[0017] The focal plane on the exit side of the second fly-eye lens 4 (the pupil plane of the illumination optical system ILS), the light amount distribution of the exposure light (secondary light source) of the small circular (small σ illumination), usually circular, a plurality of eccentric areas (2-pole and 4-pole illumination), as well as the illumination system aperture diaphragm member 5 order to determine the settings to illumination conditions to any of the annular like, rotatably disposed by a drive motor 5c It is. Consisting computer supervising controlling the operation of the entire apparatus main control system 20, to set the illumination condition by controlling the rotation angle of the illumination system aperture diaphragm member 5 through the driving motor 5c. In the state shown in FIG. 1, diaphragm plurality of apertures of the illumination system aperture diaphragm member 5 of the (sigma stop), a first dipole illumination two circular openings symmetrically around the optical axis is formed (dipole illumination ) aperture stop 5a, and the second aperture stop 5b of the dipole illumination and the aperture stop 5a rotated 90 ° is shown for. Then, in the focal plane of the exit side of the second fly-eye lens 4, the first aperture stop 5a of dipole illumination is provided. In the present embodiment, as with the illumination system aperture diaphragm member 5 has Gyotsu adjustment of light intensity distribution in a pupil plane of the illumination optical system ILS is disclosed in U.S. Patent 6, 563, 567 the other optical members may be performed to adjust the light intensity distribution in a pupil plane of the irradiation Meiko science system ILS with.

[0018] an illumination system aperture stop exposure light IL passing through the aperture stop 5a of member 5 is incident on a small-bi one beam splitter 6 reflectivity. Exposure light reflected by the beam splitter 6, is received by the integrator sensor 7 through a condenser lens (not shown). Detection signals of the integrator sensor 7 is supplied to the main control system 20, the main control system 20 based on the detection signal controls the output of the exposure light source 1, using a dimming mechanism (not shown) as required stepwise controlling the pulse energy of the exposure light IL Te.

[0019] exposure light IL that has been transmitted through the beam splitter 6 passes through a relay lens (not shown) is incident on the aperture of the field stop 9. Field stop 9 is actually fixed field stop aperture (fixed blind) and variable dynamic field structure (movable blind) force. The latter movable field stop is disposed in substantially a plane conjugate with the pattern surface of the reticle R (reticle plane), the diaphragm former fixed field, located in the conjugate plane force was also slightly 〖this defocus plane of the reticle plane of its It is. Fixed field stop is used to define the shape of the illumination area on the reticle R. Here, fixed field stop is levator Gaité explain if also slightly 〖this defocus conjugate plane force to the example of the reticle plane, but may be disposed in a conjugate plane. Movable field stop is exposed to start and unnecessary portions at the end of the scanning exposure for the respective shot areas subject to exposure performed such odd, the reticle R (or the wafer W) moves in synchronism with, the It is used to block the illumination region. Fixed field stop is reticle R (or the wafer W) but does not move in synchronism with, it is also used to define the center and width of the scanning direction and the non-scanning direction of the illumination area as necessary. The main control system 20 controls the operation of the fixed field stop aperture and a movable field of view.

[0020] field stop 9 exposure light IL passing through the opening of the through condenser lens (not shown), a mirror 10 for bending the folded optical path, and a condenser lens 11, a uniform illumination area of ​​the reticle plane of the reticle R illuminated with illuminance distribution. Normal shape of the aperture of the field stop 9 (fixed field stop) is an aspect ratio of 1: 3 to 1: 4 about rectangular. Thus, typical shape of the illumination region on the substantially conjugate reticle R and the aperture of the field stop 9 is also rectangular. Incidentally, by the main control system 20 changes the shape of the opening of Ri 9 aperture field distribution of the exposure light IL irradiated on reticle R, i.e. the cross-sectional shape and size of the exposure light IL (the image plane of the projection optical system and the cross-sectional shape and size of the illumination light on the conjugate plane) is changed. Further, the distribution of openings and patterns Ri defined by the (a region formed to shield the unnecessary light) Replace the reticle R on the reticle stage RST shielding region of the periphery of the reticle R (density) the shape and size of the illumination light is changed in the conjugate plane of the image plane of the projection optical system to vary.

[0021] Under the exposure light IL, the pattern in the illumination area of ​​reticle R, projection magnification through the projection optical system PL of the both-side telecentric | in 8 (j8 is 1Z4, 1Z5, etc.), photoresist is applied is projected onto the exposure region on one shot area on the wafer w was. The exposure area is an area of ​​the illumination region and the conjugate rectangle on the reticle R with respect to the projection optical system PL. © E c W, for example a semiconductor (silicon, etc.) or diameter, such as SOI (Silicon on Insulator) is disk-shaped substrate of about 200 to 300 mm.

[0022] part of the exposure light IL is reflected by the wafer W, the reflected light returns to the beam splitter 6 sequentially through the projection optical system PL, a reticle R, a condenser lens 11, a mirror 10, and a field stop 9, the beam splitter light is further reflected by the 6 is received by reflection amount sensor (reflectance monitor) 8 via a condenser lens (not shown). Detection signals of reflection amount sensor 8 is supplied to the main control system 20. The external (e.g., a total of four positions of ± X side and Judges Y side of the projection optical system PL) of the projection optical system PL, the Ri Contact disposed environment sensor 12 for measuring the pressure and temperature, the measurement data measured by the environment sensor 12 is also supplied to the main control system 20, Ru.

[0023] the exposure light source 1, the fly-eye lens 2, 4, mirror 3, 10, the illumination system aperture diaphragm member 5, a field stop 9, and the illumination optical system ILS from the condenser lens 11 and the like is formed. The illumination optical system IL S is further covered with the sub-chamber (not shown) as a gas-tight chamber. To maintain a high transmittance of the optical path space for the exposure light IL, the inside barrel of the subchamber and the projection optical system PL, when dry air (exposure light highly remove impurities is an ArF excimer laser nitrogen gas, helium gas or the like is also used) is supplied.

[0024] The projection optical system PL of this embodiment is a catadioptric system, multiple optical members constituting the projection optical system PL is rotationally symmetrical quartz around the optical axis AX (the exposure light is an ArF excimer one in the case of the comprises a plurality of lenses made of fluorite and the like are also used), and a plate-shaped aberration correction plate or the like made of quartz. Then, the pupil plane PP of the projection optical system PL (the pupil plane conjugate with the plane of the illumination optical system IL S) is an aperture stop 13 is disposed, that in the vicinity of the pupil plane PP lenses L1, L2 are disposed.

[0025] the lens L1, the dynamic optical characteristics of the projection optical system PL (in particular, rotationally asymmetric aberration) in order to adjust the illumination light in a wavelength range different from the exposure light IL is non-exposure light irradiation mechanism 40 irradiation Isa is by. Lens L2, static optical characteristics of the projection optical system PL (in particular, rotationally asymmetric aberration) in order to adjust a predetermined adjustment is performed by the adjusting mechanism 22. Adjustment of the optical characteristics of the projection optical system PL by adjusting mechanism 22 and the non-exposure light irradiation mechanism 40, the main control system 20 controls. It will be described in detail later adjustment mechanism 22 and the non-exposure light irradiation mechanism 40. The main control system 20 is an optical characteristic of the projection optical system PL via the control unit 15 (in particular, rotationally symmetrical aberration) for controlling the operation of the imaging characteristic correction mechanism 14 for adjusting. Note that the static optical characteristics of the projection optical system PL, the projection optical system PL is the initial state, i.e. the projection optical system PL is an optical characteristic in a state that is not affected by the irradiation of the exposure light IL, the projection optical the dynamic optical properties of the system PL, an optical characteristic that varies by the exposure light IL is irradiated to the projection optical system PL.

[0026] The reticle R is held by suction on the reticle stage RST, reticle stage RST while moving at a constant speed in the Y direction on the reticle base (not shown), X direction so that to correct the synchronization error, Y-direction, and fine movement in the rotational direction, to scan the reticle R. X direction Rechikurusute over di RST, position and rotation angle of the Y-direction, the movable mirror has kicked set on the reticle stage RST (not shown) and a laser interferometer is measured by (not shown), the measured value is mainly It is supplied to the control system 20.

[0027] The upper side surface of the projection optical system PL, and by projecting the slits image obliquely to the pattern surface of the reticle R (reticle plane), the re-imaging the slit image by receiving the reflected light of the reticle plane force and the focus sensor of an oblique incidence method for detecting a displacement in the Z direction of the reticle surface from lateral deviation of the slit image (hereinafter, referred to as "reticle side AF sensor") 16 is disposed. The information detected by Rechiku Le side AF sensor 16 is supplied to the main control system 20. Above the peripheral portion of the reticle R, the reticle § Lai instrument microscope for reticle § Lai instrument (not shown) is disposed.

[0028] On the other hand, the wafer W is attracted retained on the Z tilt stage 17 via a wafer holder (not shown). Z tilt stage 17 is fixed on the wafer stage WST, Wehasute chromatography di WST along with movable at a constant speed in the Y direction on the wafer base (not shown), X-direction, a step movable in the Y direction. Further, Z tilt stage 17, the position in the Z direction of the wafer W, and the X-axis, controlling the tilt angle around the Y axis. X direction of the wafer stage WST, position and rotation angle of the Y-direction is measured by a laser interferometer (not shown), the measured value of this is supplied to the main control system 20. The main control system 20, based on the measured value and various control information, the position of the wafer stage WST Te, which controls the speed. [0029] The bottom side of the projection optical system PL, and projects a plurality of Suritsu IMAGING obliquely to the surface (wafer surface) of the wafer W, Re and their slit image by receiving the reflected light from the wafer surface imaged, the focus sensor of their displacement from lateral deviation amount of the slit image in the Z direction of the wafer surface (defocus amount) and oblique incidence type which detects the tilt angle (hereinafter, intends saying a "wafer-side AF sensor") 18 is disposed. The information detected by the wafer side AF sensor 18 is subjected fed to the main control system 20, the main control system 20, based on detection information of the reticle-side AF sensor 16 and the wafer-side AF sensor 18, at all times the wafer surface is projected as it is focused on the image plane of the optical system PL, for driving the Z tilt stage 17.

[0030] Further, near the wafer W on the Z tilt stage 17, the irradiation amount sensor 19 consisting of a photoelectric sensor having a light receiving surface that covers the entire exposure area of ​​the exposure light IL is fixed, the irradiation amount sensor 1 9 detection signal is supplied to the main control system 20. Exposure before or periodically, by exposure light IL in a state where the light receiving surface is moved to an exposure area of ​​the projection optical system PL of the radiation amount sensor 19, the detection signal of the integrator sensor 7 a detection signal of the radiation amount sensor 19 in the dividing, the main control system 20, and stores the calculated transmittance of the optical system from the beam splitter 6 to the irradiation amount sensor 19 (wafer W). Further, on the Z tilt stage 17, the aberration measuring device 21 which measures the aberration of the projection optical system PL, is provided. Measurement results of the aberration measuring device 21 is supplied to the main control system 20. Aberration measuring apparatus 21 may use a spatial image sensor as disclosed in, for example, JP 20 02 14005 discloses (corresponding U.S. Patent Publication No. 2002Z0041377).

[0031] Further, above the wafer stage WST, it is disposed § Rye placement sensor off 'Akushisu method for web huh Lai instrument (not shown), the detection result of the above reticle § Rye instrument microscope and § Rye placement sensor based on the main control system 20 performs Araimento of § La Imento and the wafer W of the reticle R. During exposure, while irradiating the exposure light beam IL in the illumination area on the reticle R, by driving the reticle stage RST and the wafer stage WST, scanning synchronization and one shot area on the reticle R and the wafer W in the Y-direction an act of, X-direction of the wafer W by driving the wafer stage WST, is an act of stepping movement in the Y direction are repeated. This behavior pattern image of the reticle R onto each shot area on the wafer W is exposed in the step 'and' scan method. [0032] Having described the overall configuration of an exposure apparatus according to an embodiment of the present invention, the imaging characteristics is provided in order to adjust the optical characteristics of the projection optical system PL to the next correction mechanism 14, the adjustment mechanism 22 , and the non-exposure light irradiation mechanism 40 will be described in order.

[0033] [imaging characteristic correction mechanism 14 '

Figure 2 is a diagram showing an example of the imaging characteristic correction mechanism 14. 2, in a lens barrel of the projection optical system PL, and independently plurality of optical members, for example, five were selected from among the lens Ll l, L12, L13, L14, L15 are the three optical axis direction stretch universal drive elements 14a, 1 4b, 14c, 14d, are held through 14e. Lens or the aberration correction plate a fixed (not shown) before and after the lens L11~L15 also arranged. In this case, three drive elements 14a (which shows only 2 two in the drawing) are arranged in a positional relationship to be substantially equilateral vertices of, likewise other drive of triplicate element 14b~14e be arranged in a positional relationship where the vertex of the approximately regular triangle, respectively, Ru.

[0034] The telescopic drive elements 14a-14e, can be used, for example, a piezoelectric element such as a piezoelectric element, magnetostrictive element, or an electric micrometer or the like. Control unit 15, by controlling independently the amount of expansion and contraction of the drive element 14a~14e based on the control information from main control system 20, each of the optical axis direction position of the five lenses L11 through L15, and the light it is possible to control the tilt angle about the two axes perpendicular orthogonal to the axis independently. Yotsute to this, it is possible to correct the predetermined rotational symmetric aberration of the imaging characteristics of the projection optical science system PL. The rotational symmetric optical characteristics of the projection optical system PL is adjusted by the imaging characteristic correction mechanism 14 (aberration) is, follower one Kas error, the projection magnification error, curvature of field, distortion (distortion), coma, spherical comprising at least one of aberrations.

[0035] For example, by controlling the position and inclination angle of the optical axis of the lens Ll l, L15 position close to the reticle or wafer, for example (including magnification error) distortion or the like can correction child a. Further, for example, by controlling the position of the optical axis of the position of the lens L13 near the pupil plane of projection optical system PL, it is possible to correct the spherical aberration and the like. The lens L13 to be driven in Fig. 2, the illumination light for aberration correction in the projection optical system PL in FIG. 1 may be identical to the lens L1 to be irradiated.

[0036] mechanism for driving a lens or the like of the projection optical system in the PL, for example is also disclosed in JP-A-4 134 813. Further, instead of the optical member in the projection optical system PL, or together with the optical member, by controlling the position of the optical axis direction of the reticle R in FIG 1, it may be corrected rotationally symmetric aberration of Jo Tokoro . Further, as the imaging characteristic correction mechanism 14 in FIG. 1, for example, JP 60- 78454 No. as disclosed in Japanese, a hermetically sealed space between the two lenses at a constant in the projection optical system PL even using the mechanism for controlling the pressure of the gas not good.

[0037] [adjustment mechanism 22]

3A is a sectional view showing a configuration example of the adjustment mechanism 22, FIG. 3B is a top view showing a usage scenario of the adjustment mechanism 22. Note that in FIGS. 3A and 3B are shown only the configuration of the adjusting mechanism 22 for simplicity of illustration, the illustration of the configuration other than the adjustment mechanism 22 (e.g., barrel, etc.) are omitted. As shown in FIG. 3A, the adjustment mechanism 22 includes holding members 22a, the temperature adjustment Seiki 22b, and an adjusting screw 22c, and the like.

[0038] holding member 22a, for example thermal conductivity such as aluminum are high material strength formation, it is to hold the lens L2 in contact with one end of the lens periphery L2. Temperature controller 22b includes, for example, a heating and cooling element, such as a heating element or a Peltier element such as a heater, to heat or cool the lens L2 in order to adjust the optical characteristics of the projection optical system PL. The temperature adjuster 22b is mounted on the holding member 22a, for heating or cooling of the lens L2 through the high retention member 22a thermal conductivity. Temperature adjustment of the lens L2 which is performed via the holding member 22a is controlled by the control unit 23 under the control of the main control system 20. Incidentally, the element temperature adjuster 22b is attached directly to the lens L2, the may be the temperature adjustment of the lens L2.

[0039] Further, the holding member 22a, a screw hole penetrating from the contact surface to the lens L2 on one side (face you face the contact surface) are formed, the adjusting screw 22c is fitted into the screw hole It is engaged. Adjusting screw 22c is disposed so as to be substantially parallel to the plane in which the axis is perpendicular to the optical axis of the lens L2. The adjusting screw 22c is pressurized or the lens L2 in order to adjust the optical characteristics of the projection optical system PL is for vacuum. The center of the lens L2 pressurizing the lens L2 by which rotate the adjusting screw 22c in Kochikara direction (increase the force pressing the lens L2) that can, from the center of the lenses L2 around back to Kochikara direction rotating the adjusting screw 22c of the lens L2 is reduced in pressure (eliminating or weaken the force to push the lens L2) can. As the adjustment screw 22 c is Mashi is Nozomu be formed with high rigidity material for a member for pressurizing the lens L2 ingredients further temperature controller 22b is capable of heating or cooling efficiently lens L2, the thermal conductivity is high!, it preferred to form a material,.

[0040] and Misao Sakuana for operating the adjusting screw 22c in the barrel (not shown) provided in the projection optical system PL (not shown) is provided, the operator is formed on the lens barrel from the outside of the barrel it is possible to adjust the adjustment screw 22c via the operation hole was. Incidentally, the interior of the projection optical system PL is temperature control in order to suppress the variation of the optical properties. Thus, for example, typically are closed is by connexion operation hole in the lid or the like, only when manipulating the adjusting screw 22c, U,. Desirable to make the operation hole appears and remove the lid

[0041] Adjustment mechanism 22 is provided with a plurality around the lens L2, the each in the example shown in FIG. 3B is eight disposed at an angle of 45 ° with respect to the center of the lens L2. As shown in FIGS. 3A and 3 B, the temperature regulator 22b provided on the adjusting mechanism 22 is connected to the control unit 23, either the temperature regulator 22b whether temperature adjustment, and is either adjusted to times It is controlled by the control unit 2 3.

[0042] to the present embodiment us!, Te, the adjustment of the static optical characteristics of the projection optical system PL (non-rotationally symmetric aberrations) can be carried out by any of the temperature controller 22b and the adjustment screw 22c . Adjustment by temperature adjuster 22b, the response is relatively Slow but can be controlled by the control unit 23. In contrast, adjustment by the adjusting screw 22c will require manual operator but is relatively fast response. Thus, in accordance with adjustment adjusting screw 22c in this embodiment, the projection during manufacture of the projection optical system, or carried out at the time of manufacture of the exposure apparatus, adjustment by the temperature adjuster 22b is at regularly or irregularly maintenance of the exposure apparatus It is performed in order to correct the change with time of the static optical characteristics of the optical system PL. In the present embodiment, the adjustment Organization 22 is to adjust the static rotationally asymmetric aberration of the projection optical system PL, it may be used to adjust the rotationally symmetric aberration of the projection optical science system PL .

[0043] Incidentally, in the above example, adjustment screws 22c by the lens periphery mosquito 卩 the force Kochikara cormorants direction about the example of the lens L2 construction for pressurizing reduced pressure described force such as a lens in addition to the configuration of the L2 L2 peripheral entrapment in the vertical direction (which Z direction), may be used a mechanism to cause stress exerted by the sandwiching force in the plane of the lens L2. Further, in the above example it has been described an example in which Opere one data to adjust the adjusting screw 22c manually control the rotation angle of the adjusting screw 22c provided Akuchiyueta rotating the adjusting screw 2 2c 23 it may be configured to control via the.

[0044] Further, with the above example, the temperature adjuster 22b is an example in which provided with a heating and cooling element, such as a heating element or a Peltier element such as a heater, provided heating and cooling sources outside the projection optical system PL , it may be connected to the end portion of the heating and cooling sources and the holding member 22a or the lens L2 at heat transport mechanism such as a heat Noibu. Figure 4 is a diagram showing a configuration example of a temperature regulator 22b with heat transport mechanism. As shown in FIG. 4, the outside of the projection optical system PL has a plurality of heating and cooling source 24 which is controlled by the control unit 23 is provided, the heat toward from each of the heating and cooling source 24 to the end portion of the lens L2 pipe 25 is disposed! /, Ru.

[0045] In addition, it provided eight power heating and cooling sources 24 and heat pipe 25 is simplified shown in FIG. 4, as the end portion of each heat pipe 25 and FIG. 3B, 8 around the lens L2 It is placed at a location. With the above arrangement, the control unit 23 by controlling the heating and cooling source 24, it is possible to adjust the optical characteristics of the projection optical system PL like the temperature adjuster 22b. In FIG. 4, a description has been given a structure comprising a plurality of heating and cooling source 24 as an example, with one heating and cooling sources 8 of the heat pipe to the outside of the projection optical system PL is connected configured it may be. Force mow the case of the configuration, for example to alter the heating or cooling site by controlling the opening and closing of the flow path of each heat pipe lens L2.

[0046] In the present embodiment, although only set eight adjusting mechanism 22 at equal intervals around the lens L2, the number and position of the adjustment mechanism 22 can be set arbitrarily. In the present embodiment, it is arranged respectively at different positions around the force lens L2 which are arranged and adjustment screw 22c with the temperature controller 22b in the same position around the lens L2 Yogu their respective it may be different from the number of. Furthermore, one of the temperature controller 22b and the adjustment screw 22c, may be arranged around the other different lens and lens L2 of the pupil plane near the projection optical system PL. Also, in order to adjust the static optical characteristics of the projection optical system PL, and adjustment mechanism 22 may be provided with only a force either provide both temperature regulator 22b and the adjustment screw 22c [0047 ] [non-exposure light irradiation mechanism 40]

Next, a description will be given non-exposure light irradiation mechanism 40 for adjusting the dynamic optical characteristics of the projection optical system PL (non-rotationally symmetric aberrations). Non-exposure light irradiation mechanism shown in FIG. 1 40, for example, is to correct the rotationally asymmetric aberration of the center astigmatic te ism etc. occurring in the projection optical system PL when performing a da Iporu illumination. In order to correct rotationally asymmetric aberration of the projection optical system PL, non-exposure light irradiation mechanism 40 for correcting aberration of a different wavelength range than the exposure light IL to lens L1 in the vicinity of the pupil plane PP of the projection optical system PL the illumination light (hereinafter referred to as "non-exposure light") is irradiated with LB.

[0048] In this embodiment, as non-exposure light LB, using light in a wavelength range hardly feeling light a photoresist applied to Uweha W. Therefore, as non-exposure light LB, to use the infrared light pulses emitted by a wavelength 10. From a carbon dioxide laser (CO laser) as an example

2

That. It is also possible to use continuous light as CO laser. Infrared light of the wavelength 10. 6 / zm, the stone

2

The absorption against British are almost all (desirable rather is more than 90%) absorbed by a single lens having a high tool in the projection optical system PL, aberration the control without affecting the other lenses there is an advantage that is easy to use for. Further, non-exposure light LB irradiated onto the lens L1 of the present embodiment is set to be absorbed more than 90 percent!, Ru.

[0049] The wavelength as the non-exposure light LB, emitted in addition to the aforementioned infrared solid-state laser light or al emitted by the wavelength 1 mu m about the near-infrared light of YAG laser or the like, or a semiconductor laser infrared light or the like of about several m can also be used. That is, the light source that generates non-exposure light LB can be adopted the best one depending on the materials of the optical members non-exposure light LB is irradiated (lens or the like). Incidentally, in one such figure, the lens L1 may be a force concave depicted as convex lenses.

[0050] In the non-exposure light irradiation mechanism 40 in FIG. 1, the non-exposure light LB emitted from the light source system 41, toward the force in the optical path and a photoelectric sensor 43 of the plurality by the mirror optical system 42 (eight in this embodiment) cormorant is branched into one optical path. Detection signal that corresponds to the amount of non-exposure light LB is detected by the photoelectric sensor 43 is fed back to the light source system 41. Further, two optical paths of the two irradiation mechanisms 44a to the non-exposure light LB force projection optical system PL is arranged so as to sandwich the X direction of the plurality of optical paths, respectively, via 44b non-exposure light LBa, as LBb It is applied to the lens L1.

[0051] FIG. 5 is a top view showing the detailed structure of the non-exposure light irradiation mechanism 40. 5, the light source system 41 of FIG. 1 is a light source 41a and control unit 41b. Non-exposure light LB which Desa morphism from the light source 41a is one of a state which passes through the non-exposure light LB and state the optical path bending 90 ° of non-exposure light LB, respectively (closed) (open, was state) galvanomirror 45g as a movable mirror which can be switched at high speed, 45c, 45e, 45a, 45h, 45d, 45f, and enters the photoelectric sensor 43 through 45b, the detection signal of the photoelectric sensor 43 is supplied to the control unit 41b in ing. Galvanomirror 45a~45h correspond to mirror optical system 42 of FIG. 1. Control unit 41b is timing of light emission of the light source 41a according to the control information from main control system 20, the output, and controls the opening and closing of the galvanometer mirror 45A~45h.

[0052] Further, eight non-exposure light LB bent sequentially light path galvanomirror 45a~45h is irradiated Organization 44a via the respective optical fiber bundle 46A (or metal tube or the like may also be used) are Shiruberyoku to ~44h. Eight irradiation mechanism 44a~44h have the same configuration, irradiation mechanism 44a of which, 44b includes a condenser lens 47, a beam splitter 48 having a predetermined low reflectivity, a bundle fiber, or the relay lens system also a light guide portion 49 made Hitoshiryoku, a Atsumarikore lens 51, the condensing lens 47 and the light guide portion 49 and a holding frame 5 0 be fixed to the beam splitter 48.

[0053] non-exposure light LB is irradiated mechanism 44a, respectively, from 44b unexposed light LBa, is irradiated to the lens L1 in the projection optical system PL as LBb. In this case, the first pair of irradiation mechanism 44a, and 44b, a second pair of irradiation mechanism 44c, and 44d, are arranged respectively a projection optical system PL to be opposed to sandwich the X and Y directions . Then, the central third of the pair of irradiation mechanism 44e, and 44f, a fourth pair of irradiation mechanism 44 g, and is 44h, respectively irradiation mechanism 44a, 44b and irradiation mechanism 44c, the optical axis of the projection optical system PL and 44d It is placed in 45 ° rotational angular clockwise as. Then, non-exposure light LB is irradiated on the lens L1 in the projection optical system PL respectively as non-exposure light LBc~LBh from irradiation mechanism 44C~44h. The optical member non-exposure light LBa~L Bh is irradiated, and the position of the irradiation morphism area of ​​non-exposure light LBa~LBh on the optical member, the shape and size of possible non-rotationally symmetrical by experiment or simulation aberrations (such as center astigmatic Te ism) is determined as reduced. [0054] Also provided photoelectric sensor 52a~52h for receiving the non-exposure light partially reflected at each beam splitter 48 of the irradiation mechanism 44a~44h respectively, detection of the eight photoelectric sensors 52a to 52h signal is also supplied to the control unit 41b. Control unit 41b is a detection signal of the photoelectric sensor 52a to 52h, to accurately monitor the light quantity of non-exposure light LBa~LBh immediately before being irradiated from the irradiation mechanism 44a~44h the lens L1 in the projection optical system PL can, each of the irradiation amount of non-exposure light LBa~LBh based on the monitoring result is controlled to the value indicated for example by the main control system 20. Just before of the projection optical system PL, and by measuring the irradiation amount of non-exposure light LB by the photoelectric sensor 52A~52 h, the length of the optical fiber bundle 46A (optical path length) is varied, further Ku, such being affected by a change with time of the optical system or the like, can be accurately monitored irradiation amount of non-exposure light LBa~LBh irradiated to the lens L1.

[0055] Figures 6A and 6B are a front view and cross-section a portion of the projection optical system PL. As shown in FIG. 6A, the irradiation mechanism 44a, 44b, an opening was respectively kicked set in the flange portion F of the barrel of the projection optical system PL Fa, in Fb, inclined toward the force connexion slightly obliquely downward to the lens L1 It is placed so as to. Then, non-exposure light LBa, LBb emitted from the irradiation mechanism 44a, 44b is incident on the lens L1 in a direction intersecting obliquely to the optical path of the exposure light IL. Other irradiation Organization 44c~44h likewise in FIG. 5, Ri Contact are arranged at the same inclination angle in the opening in the flange portion F of FIG. 6A, the optical path of non-exposure light LBc~LBh also the exposure light IL from them incident on the lenses L1 in a direction intersecting obliquely.

[0056] This Yotsute, the optical path becomes longer in within the lens L1 of the non-exposure light LBa~LBh, non-exposure light L Ba~LBh together with most within the lens L1 is absorbed, the projection optical system PL force almost injection is not. The lens surface of a portion of the optical member (lens L1) of the projection optical system PL, i.e., the area exposed light IL that can enter (or exit), non without passing through other optical members of the projection optical system PL since the exposure light LB, the temperature distribution of the lens L1 can efficiently adjust child. as a result, can be accurately adjusted rotationally asymmetric aberration of the projection optical system PL in a short time.

[0057] Incidentally, FIG. 6B is a modification of FIG. 6A, as shown in FIG. 6B, irradiation mechanism 44a, 44b (the other irradiation mechanisms 44c~44h as well), the barrel of each projection optical system PL opening Fc provided in the flange portion F, in Fd, arranged such towards the lens L1 is inclined slightly obliquely upward, non-exposure light LBa, may illuminate the bottom surface of the lens L1 in LBb . In this case, further to Rukoto leaves at reducing the amount leaving the wafer W side force leakage of the projection optical system PL of the non-exposure light LBa~LBh.

[0058] Returning to FIG. 5, the light source 41a, the control unit 41b, the galvanometer mirror 45A~45h, optical fiber bundle 46a ~46H, irradiation mechanism 44A to 44H, and non-exposure light irradiation Organization etc. photoelectric sensors 52a-52h 40 There has been configured. Then, for example, two X-direction of the non-exposure light LBa, when irradiating the LBb Nomiore lens L1 is from the open all galvanomirror 45A~45h, was state (state for passing the non-exposure light LB), galvano by repeating the mirror 45a for a predetermined period of time operation of closing (non-exposure to reflect the light beam LB state) and the closing of the galvanometer mirror 45b by a predetermined time and motion to alternately! /,. Effect of the aberration-free! Sufficiently short!, By switching the galvanometer mirror one time (e.g. Lmsec), it is possible to eliminate the influence of the aberration. Moreover, since the non-exposure light LB is a pulse light, the opening and closing operation of the galvanometer mirror 45a~45h may be carried out in units of a predetermined number pulses. Similarly, two Y-direction of the non-exposure light LBc, when morphism irradiation only the lens L1 LBd is repeated operation and galvanomirror 45d to close the galvanometer mirror 45c for a predetermined time are alternately and only closing operation a predetermined time Bayoi. Thus, by using the galvanometer mirror 45a ~45H, no optical loss of the non-exposure light LB is little can be efficiently irradiated to the lens L1 in the state.

[0059] In the configuration example of FIG. 5, I can illuminate an area of ​​8 points on the lens L1 in a non-exposure light LB Te Unishi, Ru, and for example four positions in the X and Y directions on the lens L 1 only regions be allowed to illuminate the non-exposure light LB, it is possible to correct the most aberration generated in normal use. Also, instead of using the galvanometer mirror 45A~45h, for example by combining a fixed mirror 及 beauty beam splitter splits the non-exposure light LB into eight light beams, and open and close with a shutter of the optical paths of these light beams it may be. In this configuration, it is possible to irradiate a plurality of portions at the same time non-exposure light LB. Furthermore, when used as a light source such as a carbon dioxide gas laser or semiconductors lasers, lenses L1 the number of irradiation areas required on (8 in FIG. 5) but only to prepare the light source, the light emission of these light sources on 'by the off or the shutter may be controlled directly irradiated region on the lens L1. As described above, non-exposure light irradiation mechanism 4 0 is to adjust the non-rotational symmetry aberration of the projection optical system PL that occurs when irradiated with exposure light IL in the projection optical system PL (dynamic optical property) it can.

[0060] or more, the imaging characteristic correction mechanism 14 provided in order to adjust the optical characteristics of the projection optical system PL, adjusting mechanism 22, and have been described non-exposure light irradiation mechanism 40, then have use these projection It describes a method of adjusting the optical characteristics of the optical system PL. Note that the method of adjusting the optical characteristics of the projection optical system PL by using the image formation characteristic compensation mechanism 14, for example, which are disclosed in JP-A 4 134 813 discloses the aforementioned adjustment mechanism 22 and here the optical characteristics of the projection optical system PL is describes how is adjusted by non-exposure light irradiation mechanism 40.

[0061] [method of correcting rotationally asymmetric aberration component]

Changes and illumination condition by the illumination system aperture diaphragm member 5, the shape and size of the change of the illumination area on the reticle R by the field stop 9 is performed, a non-rotationally symmetric aberration component is generated in the projection optical system PL there is a possibility. Here, a description will be given of adjustment of a non-rotationally symmetric aberration component produced by the projection optical science system when performing dipole illumination.

[0062] FIG. 7A, 7B, 7C, 8A, and 8B are views for explaining the shape change of the lens generated when performing the dipole illumination. First, when the aperture stop 5a has two apertures spaced apart in a direction corresponding to the X direction are arranged in the focal plane of the exit side of the second fly-eye lens 4, the main being formed on the reticle R pattern to be transferred is formed by arranging at a pitch nearly the resolution limit of the projection optical system PL as shown enlarged in FIG. 7A as an example, an elongated line pattern in the Y direction in the X direction (non-scanning direction) X the direction of the line 'and' space patterns (hereinafter referred to as "L & S pattern") is the PV. At this time, the reticle R typically larger than L & S pattern PV, another plurality of L & S pattern or the like in the arrangement direction in the arrangement pitch in the X direction and the Y direction (scanning direction) be formed, Ru.

[0063] In the X-direction dipole illumination using the aperture stop 5a, assuming reticle is not, as shown in FIG. 7B, in the pupil plane PP of the projection optical system PL, and symmetric in the X direction across the optical axis AX 2 One of illuminating the exposure light IL a circular area IRx. Further, since when the various retinal cycle pattern in the optical path of the exposure light IL is also arranged, usually with light amount of the 0-order light is large Nari force than the amount of the diffracted light, smaller diffraction angle, exposure light IL most of the (imaging light beam) passes through the circular area IRx or near. Therefore, when continuing the exposure, the temperature distribution of the pupil plane PP vicinity of lenses LI is most high optical axes of two circular areas IRx sandwiched X direction and toward the force connexion gradually lower in a region near its distribution next, the lens L1 in accordance with the temperature distribution to a thermal expansion (thermal deformation).

[0064] In this case, the lens L1 were exaggerated changes seen in the Y direction and the X direction side view are as respectively Figure 7C and 7D. In these figures, when the surface shape of the exposure light absorbing front of the lens L1 to the surface A, the thermal expansion and surface B after exposure light absorption, in the direction along the X-axis (FIG. 7C), a wide range of power is reduced in order to be two protrusions sandwiching Wataru connexion optical axis, the refractive power is increased since it is one of the protrusions to locally central portion in the direction (Fig. 7D) along the Y-axis. Thus, non-rotationally symmetric aberrations such centers astigmatic tee rhythm occurs when a difference in refractive power between the X and Y directions is generated. Figure 9 is a diagram showing the center one astigmatic te ism caused by dipole illumination. As shown in FIG. 9, the image plane of the projection optical system PL, the image plane IV next lower (one Z-direction) in the refractive power is decreased for the light beam opened in the X direction, the light beam opening in the Y direction the image plane IH upward (+ Z direction), the refractive power is increased relative to the. Therefore, an astigmatism on the optical axis center astigmatic Te ism delta Zeta occurs.

[0065] In a state where the center astigmatic Te ism occurs, if the other X-direction of the L & S pattern PV on the reticle R, a predetermined pitch in the Y direction (the pitch is usually greater than the pitch of the L & S pattern PV ) assuming that array of Y-direction of the L & S pattern (not shown) is formed by the exposure light which has passed through the X-direction of the L & S pattern PV spreads in the X direction, the exposure light passed through the Y-direction of the L & S pattern the spread in the Y direction. Thus, the image of the X-direction of the L & S pattern PV is formed on the image plane IV in the lower part of FIG. 9, since the image in the Y direction of the L & S pattern is formed above the image plane IH in FIG. 9, if the image of the wafer surface Squeezing fit plane IV, the image of the X-direction of the L & S pattern PV is the image of the force Y direction L & S pattern transferred with high resolution occurs blur due to defocus.

[0066] On the other hand, are arranged at a pitch nearly the resolution limit of the projection optical system PL as shown in an enlarged, elongated line pattern mainly in the X direction on the reticle R Y direction (scanning direction) in FIG. 8A ing Te Y direction L & S pattern PH is assumed to be formed. In this case, the pupil plane of irradiation Meiko science system ILS in Fig. 1 Ru is the aperture stop 5b are set shape obtained by rotating the aperture stop 5a 90 °. In the Y direction of the dipole illumination using the aperture stop 5b, when you shall reticle is not, as shown in FIG. 8Beta, in the pupil plane ΡΡ of the projection optical system PL, and on both sides of the optical axis AX symmetry in the Y direction 2 One of illuminating the exposure light IL a circular area Iry. In this case, it is arranged various reticle pattern in the optical path of the exposure light IL, usually most of the exposure light IL (imaging light beam) passes through the circular region IRy and its vicinity. Then, when the Rechiku Le R of FIG. 8A is disposed in the optical path of the exposure light IL, for passing a substantially circular area IRy or near the even ± 1-order diffracted light from the pitch of the L & S pattern PH close to the resolution limit, image of the L & S pattern PH is projected onto the wafer W at a high resolution.

[0067] In this case, the light amount distribution of approximately Figure 8B also light amount distribution of the exposure light IL incident on the lens L1 in the vicinity of the pupil plane PP of the projection optical system PL in FIG. Therefore, when continuing the exposure, the temperature distribution of the pupil plane PP vicinity of the lens L1, the optical axis is highest in two circular areas IRy sandwiching the Y direction, becomes the area countercurrent force connexion gradually becomes lower distribution near the , lens L1 is thermally expanded depending on the distribution. Therefore, the image plane of the projection optical system PL is substantially contrary to the case of FIG. 7A, 7B and 7C, with respect to the light beam opens in the X direction becomes the vicinity of the upper image plane IH in the refractive power is increased open in the Y direction!, relative was light flux becomes near the image plane IV lower in the refractive power is decreased, the center astigmatic tee rhythm of approximately the same size when the opposite sign in FIG 9 is generated . Since being illuminated by a rectangular illumination area of ​​the reticle R in the X direction (non-scanning direction) is the longitudinal direction, the same as the center astigmatic Te ism center astigmatic tee rhythm also Figure 9 due to the illumination region It is always slightly occur in the code. Against this, the center astigmatic te ism generated in the dipole illumination of Figure 8B, the code is reversed with the center astigmatic te ism due to illumination area of ​​that rectangle, center astigmatic Te as a whole ism remote slightly smaller by case Ru, use a dipole illumination of Figure 7B.

[0068] These centers astigmatic Te ism, with a non-rotationally symmetric aberrations, other non-rotationally symmetric aberration by dipole Lumpur illumination (e.g., orthogonal in a plane perpendicular to the optical axis of the projection optical system PL two directions of projection magnification difference (XY magnification difference)) also occurs that, these non-rotationally symmetric aberrations can not substantially corrected the imaging characteristic correction mechanism 14 in Fig. In the present form condition, in order to correct the dynamic non-rotationally symmetric aberration of the projection optical system PL caused by the irradiation of the exposure light IL, the non-exposure light irradiation mechanism 40 is provided Ru.

[0069] FIGS. 10A and 10B are views for explaining an example of a method for correcting rotationally asymmetric aberration of the projection optical system using the non-exposure light irradiation mechanism. As shown in FIG. 7B, when 〖this two exposure light IL in the circular area IRx sandwiching symmetrically to the optical axis AX in the X-direction on the pupil plane PP of the projection optical system PL is irradiated, the optical axis of the lens L1 the exposure light IL is irradiated with AX in the area of ​​the region IRx and near neighbor sandwich symmetrically in the X direction. As shown in FIG. 10A, in this embodiment, approximately the area IRx is a region that is rotated 90 ° around the optical axis AX, a circular area to sandwich the substantially optical axis AX symmetrically in the Y direction on the lens L1 LRc, LRD each irradiated non-exposure light LBc shown in FIGS 5, L Bd to. Incidentally, the non-exposure light LBc, shape and size of irradiation morphism region of LBd (other non-exposure light is also the same), for example, light a position of the irradiation mechanisms 44c, condenser lenses 51 in the 44d in FIG. 5 it is also possible to change by the axially movable.

[0070] exposure light IL non-exposure light LBc region rotated 90 ° the irradiation region, by irradiating at LBd, the temperature distribution of the lens L1 region IRx and regions LRc, increases in LRD, progressively then according away is the lower distribution. In Figure 10A and 10B, X-axis and the origin of the Y axis and the optical axis AX, cross-sectional view along the non-scanning direction in a plane including the optical axis AX and the X-axis of the lens L1, and the optical axis AX and the Y-axis sectional view taken along the scanning direction in a plane including becomes as shown exaggerated in FIG. 10B co. As shown in FIG. 10B, how the thermal expansion of the lens L1 is closer to the shape of the non-scanning direction and the scanning direction together its sectional shape was Rise isotonic with substantially central portion and right and left, also the central portion and left and right refractive index distribution in greatly changes than other regions. As a result, as compared with FIG. 7C and 7D deformation in the case of lighting only the exposure light IL, the exposure light IL and non-exposure light LBc, the state of deformation of the lens L1 irradiated with LBd is a non-scanning direction and the scanning direction since the similar state, the focus position in the X and Y directions with respect to open! was light beams approximately equal to each other, center astigmatic Te ism longer 殆 throat occur. That is, the non-rotationally symmetric aberration is changed to rotationally symmetric aberrations. Rotationally symmetric aberration, it is possible to correct in imaging characteristic correction mechanism 14 shown in FIG. 2, it is possible to strictly control the imaging characteristics of the projection optical system PL.

[0071] The lens for irradiating non-exposure light, when the pupil plane conjugate with the projection in the vicinity of the pupil plane of the optical system PL lenses of the illumination optical system ILS as lenses L1, complementary center astigmatic Te ism the positive effect is increased. At this time, but it may also be irradiated with non-exposure light into a plurality of lenses of the pupil plane near. Further, on the optical member of the illumination target (L1), toward the irradiation area of ​​the combined exposure light IL and non-exposure light LB is as close as possible to the rotational symmetry is effective. However, even when irradiating the non-exposure light on the optical element position of the throat in the projection optical system PL (lens or the like), by controlling the irradiation amount, the correction effect of the center astigmatic Te ism almost desired range it is possible to obtain. Further, by irradiating the lens L1 to non-exposure light LB with the exposure light also reduces non-rotationally symmetric aberrations other than center astigmatic Te ism. Having described the method for correcting rotationally asymmetric aberrations caused when performing bright dipole irradiation is not limited to dipole illumination, change the settings of the illumination system aperture diaphragm member 5, in other lighting conditions rotationally asymmetric aberrations can occur even when illuminating the record chicle R.

[0072] In addition to changes in the illumination system aperture stop 5a, the position of the illumination area on the reticle R by the field stop 9, the shape, and change the size of the exposure in the image plane conjugate with the plane of projection optical system PL position of the light IL, the cross-sectional shape, and a non-rotationally symmetric aberration even when is modified magnitude is sly be live. The position of the opening of the reticle R, the shape, even if the distribution of the pattern size Ya reticle R (density) is changed, changes the distribution of the exposure light IL on the image plane conjugate to the plane of the projection optical system PL, and may rotationally asymmetric aberration occurs. Such aberration can be corrected by the non-exposure light irradiation mechanism 40 described above. That is, in this embodiment, as well as adjusted using the adjustment Organization 22 static optical characteristics in the initial state of the projection optical system PL (rotationally asymmetric optical characteristics), due to the irradiation of the exposure light IL projected dynamic optical characteristics of the optical system PL (non-rotationally symmetric aberrations), the distribution and the like of the exposure light IL on the image plane conjugate with the plane of the lighting conditions and the projection optical system PL which is defined by the illumination system aperture diaphragm member 5 Correspondingly, adjusted using the non-exposure light irradiation mechanism 40.

[0073] [internal configuration of the main control system]

Figure 11 is a block diagram showing the internal structure, and a device for exchanging the main control system 20 and the various signals of the main control system 20. As main control system 20 shown in FIGS. 3A and 3B, the imaging characteristic calculation unit 31, image formation characteristic control unit 32, the exposure amount control unit 33, the stage control unit 34, Z-tilt stage controller 35, the controller 36, and memory configured to include a 37. Imaging characteristic calculation unit 31 uses the detection signal of the integrator sensor 7 and the reflection amount sensor 8, the cumulative energy of the exposure light IL incident from the reticle scale in the projection optical system PL, and the projection optical system is reflected by the wafer W calculating the cumulative energy of the exposure light IL back to PL.

[0074] The imaging characteristic calculation unit 31, the controller 36 information of the lighting conditions in the exposure from the information indicating the shape and size of the aperture of the field stop 9, further Ya size characteristics of the reticle R (the opening information indicating a pattern distribution) are also provided. Further, the imaging characteristic calculation unit 31, illumination conditions, the cumulative energy of the exposure light IL, and ambient air pressure supplied from the environment sensor 12, by using information such as the temperature, in imaging characteristics of the projection optical system PL calculating a fluctuation amount of the rotationally symmetric aberration component and rotationally asymmetric aberration component. Here, if the imaging characteristic calculation unit 31 calculates the variation amount of the non-rotationally symmetric aberration component in imaging characteristics of the projection optical science system PL, transfer functions read from the memory 37 by the controller 36 calculated using (details will be described later).

[0075] imaging characteristic controller 32, based on the amount of fluctuation of the dynamic aberration component of the imaging characteristic calculation unit 31 the projection optical system PL calculated in the imaging characteristics via a control unit 15 correction mechanism 14 and by controlling the operation of the non-exposure light irradiation mechanism 40 to adjust the optical characteristics of the projection optical system PL to a desired state. Here, in correcting the imaging characteristics of the projection optical system PL by imaging characteristic correction mechanism 14 based on the control information from the imaging characteristic control unit 32 in the main control system 20, the control unit 15 is 3 by connexion to controlling the amount of expansion and contraction of the drive element 14a~14e of each individual independently five respective position in the optical axis direction of the lens L11 through L15, and about a vertical straight interlinks two axes to the optical axis controlling the inclination angle of the independence. Yotsute thereto, predetermined rotational symmetry aberration in the imaging characteristics of the projection optical system PL is corrected.

[0076] Furthermore, when adjusting the optical characteristics of the projection optical system PL by non-exposure light irradiation mechanism 40 controls the irradiation or non-irradiation of non-exposure light LBa~LBh respect to the lens L1. The control of the non-exposure light irradiation mechanism 40, a predetermined rotationally asymmetric aberrations in the imaging characteristics of the projection optical system PL is corrected.

[0077] exposure control unit 33, the indirect exposure E energy on the wafer W by using the transmittance of the optical system from the beam splitter 6 which is measured in advance and the detection signal of the integrator sensor 7 to the wafer W to be calculated. Here, the transmittance of the optical system from the beam splitter 6 to the wafer W is exposed before or periodically, the exposure light IL in a state where the light receiving surface is moved to an exposure area of ​​the projection optical system PL of the radiation amount sensor 19 by irradiation, determined by dividing the detection signals of the radiation amount sensor 19 in the detection signal of the integrator sensor 7. The exposure amount control section 33, so that the accumulated exposure energy on the wafer W falls within the target range, and controls the output of the exposure light source 1, using a dimming mechanism (not shown) as required the pulse energy of the exposure light IL is controlled stepwise. Further, by controlling the rotation angle of the drive motor 5c for rotating the illumination system aperture diaphragm member 5 Ri by the control signal from the controller 36, to control the size of the further visual field stop 9 of the opening.

[0078] The stage control unit 34, the measurement value of the laser interferometer (not shown) provided on the reticle stage RST and based on various control information Te, and controls the position and velocity of the reticle stage RST. Further, based on the measured value of the laser interferometer and various control information (not shown) provided on the wafer stage WST! /, Te, and controls the position and speed of the wafer stage WST. Furthermore, Z-tilt stage control unit 35 based on the detection information of the reticle-side AF sensor 16 and the wafer-side AF sensor 18, as at all times the wafer surface is focused on the image plane of the projection optical system PL, Z tilt stage to drive the 17.

[0079] The controller 36, the imaging characteristic calculation unit 31, image formation characteristic control unit 32, the exposure amount control unit 33, by controlling the stages control unit 34 and the Z tilt stage control unit 35, all of the exposure apparatus to control the body behavior. Memory 37 stores a transfer function showing a relationship between the variation amount of the optical characteristics of energy and projecting projection optical system PL of the light entering the projection optical system PL.

[0080] formula of transfer function stored in the memory 37, for example expressed by the following equation (1).

However,

F: focus variation amount due to the exposure light absorbing

A t: calculation interval of the focus variation due to absorption of exposure light

T: focus change time constant due to the exposure light absorption

K

F: focus variation time constant before time A t by the exposure light absorbing C: time constant of the focus change rate with respect to the exposure light absorbing

K

R

W: © Ha reflectance

: Wafer reflectance dependency

Q: incident energy of the exposure light

[0081] The transfer function shown in the above (1) is the transfer function showing the Four force fluctuates amount when the exposure light IL in the projection optical system PL. Illumination condition defined by the illumination system aperture diaphragm member 5, by changing the variable Q in the formula (1) in accordance with the cross-sectional shape and size of the exposure light IL in the conjugate plane of the image plane of the projection projection optical system PL It allows therefore is found focus variation of the projection optical system PL. Figure 12 is a diagram illustrating a typical transfer function for the focus variation amount. As shown in FIG. 12, the focus variation amount will vary significantly with start of irradiation of the exposure light IL, asymptotic gradually change rate of change of the amount of small fence a connexion is variation as irradiation time increases the exposure light IL It shows a change to. Here, the transfer function Nitsu for focus variation, each variation with the same transfer function also rotationally asymmetric aberrations such as rotationally symmetric aberration and the center Asti grayed Mateizumu force magnification the like described Te the it can be determined.

[0082] Next, an example of operation when exposing the wafer W by the exposure apparatus described above will be described. Incidentally, the static optical characteristics of the projection optical system PL (non-rotationally symmetric aberrations) are already adjusted within a predetermined allowable range by using at least one of the temperature controller 22b and the adjustment screw 22c of the adjusting mechanism 22 . In this case, a static optical characteristics of the projection optical system PL is measured by using an aberration measuring unit 21 or the like, Ru can be adjusted by adjustment mechanism 22 based on the result. When the exposure operation is started, the first main control system 20 controller 36 exposure control unit 3 3 outputs the control signal, the aperture stop is formed on the illumination system aperture diaphragm member 5 by driving the motor 5c causes disposed either on the focal plane on the exit side of the second fly-eye lens 4, to set the shape and size of the opening by driving the field stop 9. Here, the aperture stop 5a is arranged in the focal plane of the exit side of the second Furaiaire lens 4. Thus, the shape and size of the illumination area on the lighting conditions and the reticle R is set. At the same time, the controller 36 outputs information of the illumination conditions set for imaging characteristic calculation unit 31, information indicating the shape and size of the aperture of the field stop 9, and information describing the characteristics of the reticle R . [0083] Next, in the state in which the light receiving surface of the radiation amount sensor 19 is arranged in the exposure region of the projection optical system PL, and the exposure amount control unit 33 outputs a control signal to the exposure light source 1 exposure light IL is emitted to obtain a detection signal of the detection signal and the integrator sensor 7 of the irradiation amount sensor 19, obtains the transmittance of the optical system from these detection signals from the beam splitter 6 to the wafer W. Then, the controller 36 causes held on the reticle stage RST by conveying a predetermined reticle R and outputs a control signal to a reticle loader (not shown), to transfer the wafer W to output a control signal to the wafer loader (not shown) to be held on the wafer stage WST Te.

When [0084] or more of the initial process is completed, together with the stage control unit 34 outputs a control signal to each of the reticle stage RST and © Ehasuteji WST, for example, to start the acceleration of the + Y direction of the reticle stage RST, the wafer stage initiating acceleration in the Y direction WST. Reticle stage RST and Ueno, start acceleration stage WST force also passed during a predetermined time, when each of these stages is constant speed, exposure from the exposure light source 1 controller 36 controls the exposure amount control section 33 emit light IL.

[0085] exposure light emitted from the exposure light source 1, the first fly-eye lens 2, the oscillating mirror 3, and a second opening formed on the illumination system aperture diaphragm member 5 after sequentially through the fly-eye lens 4, etc. It passes the aperture 5a. Aperture stop transmitting the exposure light IL a 5a is shaped by the field stop 9 via a beam splitter 6 in a slit shape, the mirror 10 - after being deflected in the Z-direction, irradiating the reticle R via condenser lens 11 It is. The exposure light IL is shaped by the aperture stop 5a, the irradiation area on the reticle R and the length in the X direction and the slit-shaped.

[0086] The reticle exposure light transmitted through the R, the projection optical system via the PL is irradiated on the shot area to be exposed on the wafer W, this part © E c of the pattern formed on Yotsute reticle R W is transferred to a portion of the shot area to be exposed processing. Thus, each shot area on the wafer W is sequentially exposed. During the exposure light IL is irradiated, are output detection signal from the integration Tasensa 7 and the reflection amount sensor 8, the imaging characteristic calculation unit 31 uses the detection signal of the integrator sensor 7 and the reflection amount sensor 8, the cumulative energy of the exposure light IL incident on the projection optical system PL from the reticle scale, and calculates the cumulative energy of the exposure light IL is reflected by the wafer W returns to the projection optical system PL.

[0087] As described above, the imaging characteristic calculation unit 31, information of the lighting conditions in the exposure from the controller 36, information indicating the state of the field stop 9, and together with information indicating a characteristic of the reticle R is being supplied , transfer function stored in the memory 37 is supplied is read. Imaging characteristic calculation unit 31, the illumination conditions of said information, information indicating the state of the field stop 9, and information indicating a characteristic of the reticle R, the cumulative energy of the exposure light IL, and the surrounding supplied from the environment sensor 12 pressure, by using the information and the transfer function of the temperature and the like, that to calculate the variation amount of the rotation symmetrical aberration component and a non-rotationally symmetric aberration component in imaging characteristics of the projection optical system PL. Incidentally, the amount of variation of aberration component of the projection optical system PL is calculated by using the aforementioned equation (1). The calculation result is output from the imaging characteristic calculation unit 31 to the controller 36.

[0088] Controller 36, it outputs the calculated result of the imaging characteristic calculation unit 31 to the imaging characteristic control unit 32. Imaging characteristic controller 32, based on the calculation result output from the controller 36, braking by controlling the operation of the imaging characteristic correction mechanism 14 via the control unit 15, at all times so that the desired imaging characteristic is obtained suppressing variation of the rotational symmetric aberration of the projection optical system PL. The correction of rotationally asymmetric aberration of the projection optical system PL due to the irradiation of the exposure light IL is carried out by the non-exposure light irradiation mechanism 40. Or control of order while the exposure operation is performed which is repeatedly executed, the rotationally symmetric aberration and non-rotationally symmetric aberration of the projection optical system PL, illumination conditions, exposure of the conjugate plane of the image plane of the projection optical system PL as possible out it is precisely controlled according to the distribution of light or the like IL.

[0089] All the above description, Te has been described as an example a case of adjusting the optical characteristics of the projection optical system PL by using the transfer function, a memory when adjusting the optical characteristics of the projection optical system PL may be adjusted, the optical characteristics of the projection optical system PL by using the adjustment amount set in the Ru table stored in 37. Figure 13 is a diagram for explaining an example of a table stored in the memory 37. Under certain illumination conditions, the adjustment amount of the optical characteristics of the projection optical system PL changes according to the magnitude of the field stop 9 of an opening provided in the illumination optical system ILS (area). For this reason, when illustrating the relationship between the adjustment amount of the optical properties of the magnitude and the projection optical system PL of the aperture of the field stop 9 with curve AJ in FIG 13. The relationship between the adjustment amount of the field stop 9 of the opening size and optical characteristics of the projection optical system PL shown in FIG. 13 is merely an example, it may also be straight!,.

[0090] In the present embodiment, by dividing the size of the aperture of the field stop 9 into a plurality of sets representative adjustment amount that put in each segment, and information indicating the size of the aperture of the field stop 9 representatives stored in the table in association with adjustment amount. In the example shown in FIG. 13 are divided into the five segments R1~R5 size of the aperture of the field stop 9, a typical adjustment g [l~J5 for each segment R1~R5 are set. Thus, the above table, so that for example the maximum and minimum values ​​of each of the segment R1 -R5 and the adjustment 1~J5 are stored in association. Typical adjustment amount in each section R1 to R5, for example, using the average value of the curve AJ included in each segment R1 to R5. Besides this, the use of an intermediate value between the average value or the maximum value and the minimum value of the curve AJ included in each segment R1~R5 when the curve AJ included in each segment R1~R5 and linearity recent it can. Further, field stop 9 opening segment size is 5, because more do not fit Raz of, taking into account the change in the size of the aperture of the field stop 9, it can be appropriately determined.

In the case of using the [0091] above table, the controller 36 reads the table from the memory 37, reads out the adjustment amount of the optical characteristics of the projection optical system PL corresponding to the setting, the imaging characteristics control the tone Seiryou and outputs it to the part 32. Imaging characteristic control unit 32 outputs a control signal for adjusting the optical characteristics of the projection optical system PL in accordance with the adjustment amount are output from the controller 36 to the control unit 1 5 and a non-exposure light irradiation mechanism 40 projection optical system adjusting the optical properties of the PL. Treatment of the following optical characteristics with respect to the projection optical system PL in accordance with the cross-sectional shape and size of the exposure light IL (rotationally symmetric aberrations and non-rotational symmetry aberration) is adjusted.

[0092] In the above description, the field stop 9 of the aperture size of the optical characteristics of the projection optical system PL in accordance with the (area) adjustment amount table force field stop 9 that have been described for the opening if only the magnitude It not, may be have a table in accordance with the position and shape of the aperture of the field stop 9. For example, the length in the longitudinal direction of the opening of the field stop 9, or be provided with an tables corresponding to the length in a direction corresponding to the length in the Y-direction direction corresponding to the X direction of the opening good ヽ. Immediate Chi, the adjustment amount table stored in the memory 37, setting of the field stop 9, setting of the illumination system aperture stop member 5, and it is to be prepared for each variety of conditions determined by the characteristics of the reticle R or the like kill.

[0093] As described above, in the exposure apparatus according to this embodiment, an adjustment mechanism 22 for adjusting the static optical characteristics of the projection optical system PL (non-rotationally symmetric aberrations), the dynamic of the projection optical system PL non Ru for exposure light irradiation mechanism 40 and a, is possible to reduce the amount of adjustment of the dynamic non-rotationally symmetric aberrations by non-exposure light irradiation mechanism 40 for adjusting an optical characteristic (rotationally symmetric aberrations) come, it is possible to perform a dynamic adjustment of the non-rotating aberration of the projection optical system PL more precisely. Further, in the exposure apparatus of this embodiment, the image plane and the distribution of the exposure light IL in the conjugate plane of the projection optical system PL (the position of the exposure light IL, the cross-sectional shape, and size) into consideration, namely since adjusting the optical properties of consideration to the projection optical system PL at least one of the characteristics of the setting state of the opening of the visual field stop 9 and reticle Ru, with the optical characteristics of the projection optical system PL is controlled to a desired state , it is possible to project a pattern of the reticle R accurately.

[0094] Having described exposure apparatus and method according to an embodiment of the present invention, the present invention is not limited to the above embodiments and can be freely modified within the scope of the present invention. For example, the exposure apparatus of the above embodiment, the adjustment using the adjusting mechanism for adjusting the adjustment mechanism and dynamic non-rotationally symmetric aberration adjusting the static non-rotationally symmetric aberration of the projection optical system PL, and a projection optical to an exposure apparatus for performing both to carry out the in and force either the adjustment of the adjustment of the optical characteristics of the projection optical system PL in consideration of distribution of the exposure light IL on the image plane conjugate with the plane of the system PL Chidesaru.

[0095] In the embodiment described above, taking into account the distribution of the exposure light IL on the image plane conjugate with the plane of projection optical system PL, rotationally symmetric aberration of the projection optical system PL and a rotationally asymmetric yield Yo ヽ also be Ru so as to adjust the difference, rub 〖to adjust one or the other. In the above embodiment has described the case of adjusting the optical characteristics of the projection optical system PL by using a transfer function or table, the non-rotation of PL of the projection optical system by using an aberration measuring apparatus 21 shown in FIG. 1 symmetric aberrations actually measured, may adjust the optical characteristics of the projection optical system PL using the measurement results. In the embodiment described above, it is performed a predetermined adjustment to different lenses and adjusting mechanism 22 and the non-exposure light irradiation mechanism 40 may be performed a predetermined adjustment to the same lenses .

[0096] Further, in the above-described embodiment, as a non-rotationally symmetric aberration of the projection optical system, mainly Tsu in correcting the center astigmatic Te ism, as a force rotationally asymmetric yield differences described Te, Center not only the astigmatic Te ism, other non-rotationally symmetric aberrations such as two-way projection magnification difference (XY magnification difference) and image shift orthogonal there is a possibility to occur. Accordingly, the optical member to be adjusted in the adjustment mechanism 22 can determine the optimal experiment or simulation force depending on the type of non-rotationally symmetric aberrations. Similarly, adjusted subject to the optical member of the non-exposure light irradiation mechanism 40, and the irradiation position of the non-exposure light LB in the optical member on the shape and size, appropriately set according to a non-rotating addressed types of aberrations, such as can do. For example, when adjusting a non-rotational symmetric XY magnification difference described above, close to the relatively reticle R among the plurality of optical members of the projection optical system PL, and an optical element, some optical element near the Ueno, the W preferably selected. It is also possible using non-exposure light irradiation mechanism 40 for adjusting the rotational symmetric aberration of the projection optical system PL. For example, the projection optical system PL numerical aperture smaller σ value representing the ratio between the numerical aperture of the illumination optical system ILS (e.g. 0.4 below) to a small σ of order easily occurs when adopting the illumination method rotational symmetry aberration can be satisfactorily corrected by using the non-exposure light irradiation mechanism 4 0.

[0097] In the above embodiment, when the adjustment mechanism 22 adjusts the static optical characteristics of the projection optical system PL, non-exposure light irradiation mechanism 40 to adjust the dynamic optical characteristics of the projection optical system PL One had to have been described, to adjust the static optical characteristics of the projection optical system PL so as to adjust the dynamic optical characteristics of the projection optical system PL by adjusting mechanism 22 in Yogu non-exposure light irradiation mechanism 40 It may be Unishi. That is, the adjustment mechanism for adjusting the adjustment Organization, and dynamic non-rotationally symmetric aberration adjusting the static non-rotationally symmetric aberration of the projection optical system PL is not limited to the embodiments described above, the heating effect, cooling effect, it is possible to use various methods of using the external force or the like Te appropriately selected or combination.

[0098] In the above embodiment, Sutetsu flop 'and' repeat of transferring the case where the present invention is applied to an exposure apparatus of the step 'and' scan method in a batch pattern of forces reticle is described as an example exposure apparatus of a type (so-called Sutetsupa) also as possible out applying the present invention. The projection optical system and including a reflection system and force refraction system described with reference to the projection optical system PL of the refraction system in the embodiment described above, also possible to apply the present invention to the reflective type only force becomes the projection optical system can. The shape of the illumination area of ​​the exposure light IL (exposure region) is not limited to a rectangle, but may be, for example arcuate.

[0099] The exposure apparatus of the present invention, transfer exposure apparatus that transfers a device pattern is used in the manufacture of semiconductor devices on a semiconductor substrate, a is a circuit pattern used in the manufacture of liquid crystal display element onto a glass plate exposure apparatus, an exposure apparatus used in the manufacture of thin film magnetic head to transfer the device pattern onto a ceramic wafer, and can also be applied to an exposure apparatus such as used for manufacturing the image pickup element such as a CCD to be.

[0100] [Device Manufacturing Method]

Next, an exposure apparatus according to an embodiment of the present invention is applied to an exposure apparatus for manufacturing semiconductor devices, a method for manufacturing a semiconductor device using the exposure apparatus. Figure 14 is a Furochi Yato showing a part of a process of manufacturing the semiconductor device as a microdevice. As shown in FIG. 14, first, in step S 10 (design step), the function 'performance design of semiconductor devices, a pattern design to realize the function. Continue, in step S 11 (mask manufacturing step), a mask formed with the designed pattern (reticle). On the other hand, in step S 12 (wafer fabrication step), a wafer is manufactured using a material such as silicon down.

[0101] Next, in step S 13 (wafer processing step), using the mask and wafer prepared in Step S. 10 to step S 12, as described later, the actual on © E c by lithography or the like to form a circuit, and the like. Then, device assembly is performed using the step S 14 (device assembly step) fraud and mitigating risk wafer processed in step S 13. The step S14 〖This dicing step, Bonding step, and packaging step (chip encapsulation) steps are optionally included. Finally, in step S 15 (inspection step), fabricated microdevices operation confirmation test, the inspection of the durability test, and the like are performed in step S 14. Micro device is completed After these steps and shipped.

[0102] FIG. 15 is a diagram showing an example of a detailed flow of step S13 in FIG. 14. 15 Te smell, in step S21 (oxidation step) oxidizes the wafer's surface. Step S2 in 2 (CVD step), an insulating film is formed on the wafer surface. In step S23 (electrode type formation step) forms electrodes on the wafer by vapor deposition. In step S 24 (I O emissions implantation step), ions are implanted into the wafer. Above each step S21~ scan Tetsupu S24, constitutes the pre-process in each step of wafer processing, it is selectively executed in accordance with the processing required in each stage.

[0103] Te you, at each stage of the wafer process, the above pre-process is completed, post-process is executed as follows. In this post-process, first in step S25 (resist shape formation step), a photosensitive agent is applied to the wafer. Subsequently, in step S26 (as exposure E) is transferred by the exposure apparatus and the exposure method described above the pattern on the mask onto the wafer. Next, step S27 develops the wafer which has been exposed light in the (development step), in a step S28 (etching step), the resist is removed by etching an exposed member of an area other than the area where the residual presence. In step S29 (resist removal step), except Ri taken an unnecessary resist after etching is removed. By repeatedly performing these pre-process and post-process, a pattern is formed on the multiplex on the wafer.

By using the device manufacturing method of the embodiment described [0104] above, the exposure step (step S2 6) Contact, Te being adjusted optical characteristic of the projection optical system PL in which the exposure apparatus is provided, formed on the reticle R pattern is transferred Ueno, on W. Therefore, the optical characteristics of the projection optical system PL is adjusted according to the cross-sectional shape and size of the exposure light IL incident on the image plane conjugate with the plane of projection optical system PL, faithfully onto the wafer a fine pattern can be transferred, it is possible to produce the device with a high yield manufacturing defects is reduced as a result.

[0105] The present invention is International Publication (WO) immersion exposure apparatus is locally filled with liquid between the projection optical system PL and the wafer W as disclosed in the 99Z49504 pamphlet or the like, JP flat immersion exposure apparatus that moves a stage holding a substrate to be exposed, as disclosed in JP 6 124 873 in the liquid tank, is disclosed in JP-a-10- 303114, so that stage forming a liquid bath having a predetermined depth above is applicable to any exposure apparatus of the liquid immersion exposure light device holding the substrate therein.

Claims

The scope of the claims
[1] an illumination optical system for projecting illumination light to the mask, an image of the pattern of the mask in an exposure apparatus including a projection optical system for projecting a shadow onto a substrate,
An adjusting device for adjusting an optical characteristic of the projection optical system,
A setting device for setting at least one of the cross-sectional shape and size of the illumination light in the conjugate plane of the image plane of the projection optical system,
In response to said cross-sectional shape and size of the set the illumination light by the setting device, before Symbol adjuster exposure apparatus characterized in that it comprises a control device for controlling the adjustment of the optical characteristics of the projection optical system according to.
[2] the control device, the transfer function showing the relationship between the variation amount of the energy and optical properties of the projection optical system of the light incident on the projection optical system in accordance with the cross-sectional shape and size of the illumination light includes a storage unit for storing for exposure apparatus according to claim 1, wherein the controlling the adjustment of the optical characteristics of said projection optical system by the adjusting device by using a transfer function stored in the storage unit.
[3] The control device comprises a storage unit for storing a table in which a plurality sets the adjustment amount of the optical properties against the projection optical system in accordance with the cross-sectional shape and size of the illumination light, in the storage unit use the stored table V, Te exposure apparatus according to claim 1, wherein the controlling the adjustment of the optical characteristics of said projection optical system by the adjusting device.
[4] The optical characteristic of the projection optical system, an exposure apparatus according to any one of claims 3 to include non-rotational symmetry aberration claim 1, wherein.
[5] The optical characteristics of the projection optical system according to claim 4 Symbol mounting of the exposure apparatus characterized in that it comprises a rotationally symmetrical aberrations.
[6] an illumination optical system for projecting illumination light to the mask, an image of the pattern of the mask in an exposure apparatus including a projection optical system for projecting a shadow onto a substrate,
A first adjusting mechanism for adjusting the static optical properties of the non-rotationally symmetric in the projection optical system,
Exposure apparatus, characterized in that it comprises a second adjusting mechanism for adjusting the dynamic optical properties of the non-rotationally symmetric in the projection optical system.
[7] The static optical properties, Ri optical properties der of the projection optical system has in the initial state,
The dynamic optical property is an optical property that varies depending on the illumination condition of the illumination light when illuminating the illumination light to the projection optical system
The exposure apparatus according to claim 6, wherein a.
[8] the first adjusting mechanism is for at least one optical element included in the projection optical system, heating, cooling, pressurizing, claims, characterized in that it comprises a mechanism for at least one vacuum the exposure apparatus 6 or claim 7 wherein.
[9] the second adjustment mechanism, claim 6, characterized in that it comprises a mechanism for irradiating light beams of different wavelengths at least in part on the wavelength of the illumination light of the projection optical system according to claim 8 any exposure apparatus according to an item.
[10] A device manufacturing method which comprises a step of transferring a pattern of a device using an exposure apparatus according to claims 1 to any one of claims 9 on the object.
PCT/JP2005/015800 2004-08-31 2005-08-30 Exposure apparatus and device manufacturing method WO2006025408A1 (en)

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