WO2006013828A1 - シリコン単結晶の品質評価方法 - Google Patents
シリコン単結晶の品質評価方法 Download PDFInfo
- Publication number
- WO2006013828A1 WO2006013828A1 PCT/JP2005/014049 JP2005014049W WO2006013828A1 WO 2006013828 A1 WO2006013828 A1 WO 2006013828A1 JP 2005014049 W JP2005014049 W JP 2005014049W WO 2006013828 A1 WO2006013828 A1 WO 2006013828A1
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- WIPO (PCT)
- Prior art keywords
- single crystal
- silicon single
- quality
- crystal growth
- silicon
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Definitions
- the present invention relates to a silicon single crystal quality evaluation method for evaluating the quality of a silicon single crystal pulled from a silicon melt, and evaluates the quality of the entire crystal region using log data of control parameters during crystal growth. To do.
- the former is LPD (Laser Point Defect J, OP ( Crystal Originated Particle), FPD (Flow Pattern Defect), LSTD (Laser Scattering Tomograpy Defect), etc.
- the vacancy type defect is called VD (Vacancy type Defect)
- the interstitial silicon type defect is called ID (self-Interstitial type Defect).
- Distribution and generation behavior are the crystal pulling speed, that is, the crystal growth speed (hereinafter referred to as crystal growth speed V), and the temperature gradient (hereinafter referred to as temperature gradient G) near the melting point in the pulling axis direction of the silicon single crystal. It is known that it is determined by crystal growth.
- the defect distribution in the silicon single crystal shows that the VD generation region force also changes to the ID generation region, and there is a defect-free region in the middle region.
- the single crystal diameter control mechanism in silicon single crystal growth generally detects the crystal diameter (or the corresponding crystal weight) as needed, and the difference from the target crystal diameter is determined by silicon. Feedback control of melt temperature and crystal growth rate V is performed. Therefore, the force that was controlled with a fluctuation of about ⁇ 0.02 mm / min with respect to the set crystal growth speed V.
- the allowable fluctuation range of the crystal growth speed V to satisfy the required quality is Since it has become necessary to make them equal or lower, there are cases where quality standards have been partially deviated at the control level so far, and it has become necessary to accurately inspect and judge them.
- a silicon single crystal is grown. Specifically, the silicon melt is pulled up to form an ingot-shaped silicon single crystal (step 1201). The silicon single crystal is divided into blocks of a predetermined length and further sliced (step 1202). A quality inspection (intermediate inspection) is performed on the divided blocks (step 1203). In this intermediate inspection, so-called sampling inspection is performed to extract the inspection sample from both ends of the divided block, and inspections such as oxygen concentration, resistivity, stacking fault, and Grown-in defect are performed. Grown-in defects are detected using a selective etching method such as Seco etching, which detects VD and ID. If the wafer satisfies the prescribed standard, the block from which the wafer is extracted is determined to be acceptable, and the process passes to the next wafer processing step.
- a selective etching method such as Seco etching
- woofer chemical / mechanical polishing processing is performed (step 1204).
- Product inspection is performed on the wafer after the wafer processing process is completed (step 1205).
- the quality inspection currently being performed is merely an estimation of the quality of the extracted block based on the quality of the extracted sample, and is a high-precision inspection method.
- the sample wafer itself is of high quality, it is determined that the extraction target block is of high quality, and all the wafers sliced from that block are mirror-finished. In some cases, low-quality wafers may be included in all wafers. Such wafers are eventually rejected because they are rejected at the product inspection stage. Since wasteful work occurs in this way, there is a problem in terms of work efficiency.
- the present invention has been made in view of such a situation, and the accuracy of wafer quality inspection is improved.
- the problem to be solved is to improve the working efficiency and the yield by improving. Means for solving the problem
- the first invention is a first invention
- control parameters that affect the quality of the silicon single crystal are measured, and using the preset control parameter tolerance and the measured control parameter, the good quality part and quality of the silicon single crystal are measured. Determining a defective part
- the second invention is:
- the third invention is the first or second invention
- the control parameter is a crystal growth rate of a silicon single crystal.
- the fourth invention is the first or second invention
- the control parameter is a lower end force of a heat shielding plate that is disposed above the silicon melt and shields radiant heat from the silicon single crystal, and a distance to the surface of the silicon melt.
- control parameters that affect the quality of the silicon single crystal for example, the pulling speed of the silicon single crystal, that is, the crystal growth speed V, and the radiant heat applied to the silicon single crystal placed above the silicon melt.
- the distance to the silicon melt surface that is, the GAP distance d, is also controlled by the lower end force of the heat shield plate that shields the film.
- These control parameters have a range in which the silicon single crystal is maintained at a predetermined quality. This is called the allowable range.
- the crystal growth rate V has an allowable range corresponding to each part of the silicon single crystal.
- Such an allowable range is obtained in advance.
- measure the log data of the control parameters and use this log data to determine the actual value of the crystal growth rate V. Then, the allowable range and the actual value are compared.
- the crystal growth rate V corresponding to the portion from position L0 to position L1 and the portion from position L2 to position L3 in the silicon single crystal 22 is within an allowable range.
- the crystal growth rate V corresponding to the portion of the silicon single crystal 22 from position L1 to position L2 is outside the allowable range.
- the portion from the position L0 to the position L1 and the portion from the position L2 to the position L3 of the silicon single crystal 22 are determined as non-defective products satisfying the predetermined standard, and the portion from the position L1 to the position L2 is determined as the predetermined portion. It is determined that the product does not meet the standards.
- the quality of the entire region of a silicon single crystal is evaluated using log data of control parameters at the time of crystal growth.
- the conventional sampling inspection that extracts and evaluates a part of the silicon single crystal
- the entire area of the silicon single crystal is evaluated, so the accuracy of the quality inspection is high.
- FIG. 1 is a diagram showing a configuration of a CZ method single crystal bow I lifting apparatus used in this embodiment.
- the single crystal pulling device 10 can freely move up and down in the furnace body 11 and Two crucibles 12 that can rotate freely around the lifting shaft, store the silicon melt 21, the side heater 13 that surrounds the side of the crucible and mainly heats the side of the crucible, and faces the bottom of the crucible A bottom heater 14 that mainly heats the bottom of the crucible, and a heat shield 15 that is provided above the crucible and shields radiant heat from the silicon single crystal 22.
- crystal growth rate V and “distance d from thermal shield lower end 15a to silicon melt liquid surface 21a” are applied as control parameters.
- the crystal growth rate V is obtained from the operation of a single crystal pulling unit (not shown).
- the single crystal pulling apparatus 10 is provided outside the furnace body 11 and includes a laser beam irradiator and a light receiver.
- the distance measuring unit 31, the scan mirror 32 provided outside the furnace body 11 and capable of moving or rotating freely, and provided inside the furnace body 11 and facing the scan mirror 32 through the entrance window 11a It has a prism 33.
- the gap between the heat shield lower end 15a and the silicon melt liquid surface 21a is referred to as "GAP".
- the laser beam that is also output as the laser beam irradiator force of the distance measuring unit 31 is reflected by the scan mirror 32, passes through the incident window 11a, is refracted by the prism 33, and is irradiated onto the silicon melt surface 21a. Further, the laser beam is reflected by the silicon melt surface 21a, and is irradiated and scattered on the lower surface of the heat shield lower end portion 15a. Part of the scattered light is reflected by the silicon melt surface 21a, refracted by the prism 33, transmitted through the incident window 11a, reflected by the scan mirror 32, and incident on the light receiver of the distance measuring unit 31. .
- the distance measurement unit 31 uses the distance between the laser beam irradiator and the light receiver, the irradiation angle of the laser beam, and the reception angle of the scattered light, and the laser beam irradiation force also calculates the optical path distance Dw to the receiver. .
- the scan mirror 32 is rotated or moved to move the laser light irradiation position from the silicon melt liquid surface 21a to the upper surface of the thermal shield lower end portion 15a. Then, the laser beam output from the laser beam irradiator of the distance measuring unit 31 is reflected by the scan mirror 32, passes through the incident window 1 la, is refracted by the prism 33, and is irradiated on the upper surface of the lower end portion 15a of the heat shield. Scattered. A part of the scattered light is refracted by the prism 33, passes through the incident window 11a, is reflected by the scan mirror 32, and enters the light receiver of the distance measuring unit 31.
- the distance measurement unit 31 Using the distance between the laser beam irradiator and the light receiver, the irradiation angle of the laser light, and the light reception angle of the scattered light, the optical path distance Ds to the light receiver is calculated in addition to the power of the laser light irradiator.
- the difference between the optical path distances Dw and Ds is (the upper surface force of the heat shield lower end 15a is also the distance to the silicon melt liquid surface 21a) X2. That is, the GAP distance d is obtained by considering the thickness of the lower end 15a of the heat shield in the difference between the optical path distances Dw and Ds, but in the present embodiment, the thickness of the lower end 15a of the heat shield is ignored. Therefore, GAP distance d is
- FIG. 2 is a flow chart showing a silicon wafer manufacturing process including the present invention.
- Silicon melt force The silicon single crystal is pulled up to form an ingot (step 201).
- the crystal growth rate V and the GAP distance d are measured constantly or at predetermined time intervals, and the measurement results are stored in a storage device not shown as log data.
- crystal growth rate data is averaged, and GAP distance data is data processed (step 202).
- the averaging process of the crystal growth rate data will be described.
- the part of the silicon single crystal described in this specification refers to a position on the silicon single crystal when the longitudinal direction of the silicon single crystal is the displacement direction.
- the defect distribution of a wafer sliced from an arbitrary part of a silicon single crystal is determined by the crystal growth rate V performed when forming the part of the arbitrary part and a part of the predetermined range (for example, 30 mm front and 40 mm rear). There is a very good correlation with the average value of.
- the crystal growth rate V executed when forming a certain portion of the silicon single crystal and a predetermined range before and after the portion is extracted from the log data, and the average value of the extracted crystal growth rate data And the calculated value is regarded as the crystal growth rate V corresponding to the arbitrary position.
- the relationship between each part of the silicon single crystal and the crystal growth rate V is obtained by using the thus obtained crystal growth rate V as an actual value.
- GAP distance data Data processing of GAP distance data will be described. This process is based on log data. GAP distance data for each fixed pitch is extracted. This process can improve the processing efficiency without affecting the quality inspection result.
- An allowable range is set in advance for each of the crystal growth speed V and the GAP distance d, and whether or not the crystal growth speed V after the averaging process and the GAP distance d after the data processing are within the allowable range. Judgment is made (step 203).
- the allowable range is a range of control parameters that can maintain the quality of an arbitrary part of the silicon single crystal at a predetermined standard or higher, and is determined for each part of the silicon single crystal. ing.
- the allowable range of crystal growth rate V and GAP distance d and how to find them will be described later.
- FIG. 3 is a diagram showing an example of the relationship between the actual value of the crystal growth rate and the allowable range of the crystal growth rate and the portion of the silicon single crystal.
- the crystal growth speed V corresponding to the portion from position L0 to position L1 and the portion from position L2 to position L3 in the silicon single crystal 22 is within the allowable range.
- the crystal growth rate V corresponding to the portion of the silicon single crystal 22 from position L1 to position L2 is outside the allowable range.
- the portion from the position L0 to the position L1 and the portion from the position L2 to the position L3 of the silicon single crystal 22 are determined to be non-defective products that satisfy the predetermined standard, and the portion from the position L1 to the position L2 is predetermined. It is determined that the product does not meet the standards.
- an allowable range is set for the GAP distance d, and a portion of the silicon single crystal in which the GAP distance d is within the allowable range is determined to be a non-defective product that satisfies a predetermined standard, and the GAP distance d is A portion outside the allowable range is determined as a defective product that does not satisfy a predetermined standard.
- the silicon single crystal is divided into blocks of a predetermined length and further sliced (step 203: OK, step 205).
- the cutting position is changed so as to cut both ends of the region determined to be defective, and then the silicon single crystal is divided into blocks of a predetermined length. Only non-defective blocks are sliced (decision NG in step 203, step 204, step 205). Blocks containing defective products are discarded (step 206)
- step 207 it is possible to omit the quality inspection related to the Grown-in defect. All sliced wafers flow to the next wafer processing step.
- a chemical / mechanical polishing process (mirror finishing) of the wafer is performed (step 208).
- Product inspection final inspection is performed on the wafer after completion of the wafer processing process (step 209). Wafers that pass the specified standard and pass the product inspection are shipped as products (step 209: OK, step 210), and wafers that are rejected are discarded as defective (step 209: NG, step 211).
- Figure 4 shows the relationship between the crystal growth rate V and the number of LPDs at any part of the silicon single crystal. Although some data are entered in FIG. 4, it has been confirmed that the data is distributed in the area surrounded by the ellipse E according to the experiment results of the present inventors. As shown in Fig. 4, there is a correlation between the crystal growth rate V and the number of LPDs. LPD increases as the crystal growth rate V increases, and conversely, LPD decreases as the crystal growth rate V decreases. From this relationship, it can be said that LPD decreases if the crystal growth rate V is slow. However, when the crystal growth speed V falls below the specified speed, ID is generated on the outer periphery of the wafer.
- This tolerance is It exists in each part of the recon single crystal and is not necessarily constant in all parts. This can also be seen from the change in the tolerance range shown in Figure 3.
- the allowable range also varies depending on the required product standards. From the above, it is necessary to determine the permissible range for each part or predetermined part of the silicon single crystal, and it is necessary to determine it according to the product standard.
- FIG. 5 is a graph showing the relationship between the GAP distance d and the LPD number at an arbitrary part of the silicon single crystal. As shown in Fig. 5, there is a correlation between the GAP distance d and the number of LPDs. When the GAP distance d increases, the LPD increases. Conversely, when the GAP distance d decreases, the LPD decreases. From this relationship, it can be said that LPD decreases if GAP distance d is small. However, if the GAP distance d is less than the predetermined distance, an ID is generated on the outer periphery of the wafer.
- the range of the GAP distance d according to the product standard can be specified by using the correlation shown in FIG.
- This allowable range exists for each part of the silicon single crystal, and is not always constant for all parts.
- the allowable range also varies depending on the required product standards. From the above, it is necessary to obtain an allowable range for each part or predetermined part of the silicon single crystal, and it is necessary to obtain it according to the product standard.
- Fig. 6 shows the relationship between the crystal growth rate V and the GAP distance d, which have the greatest effect on controlling VZG. From Fig. 6, it can be seen that increasing the control accuracy of either the crystal growth rate V or the GAP distance d increases the allowable range of the other. For example, by restricting the GAP control range in Fig. 6 to X force ⁇ , the allowable range of crystal growth rate V can be increased from Y to. Therefore, if one of the control parameters is strictly controlled, the allowable range of the other control parameter can be widened, and the yield rate of the silicon single crystal can be increased without strictly controlling the other control parameter. If you can do it, you will.
- the concept of the allowable range is the same for both crystal growth speed V and GAP distance d. Therefore, here we will explain the crystal growth rate V.
- a level test of the crystal growth rate V is performed so that the GAP distance d becomes a set value. As shown in Fig. 7, the level test is a growth condition (pattern a) that is added at an arbitrary speed range to a currently set crystal growth speed V (pattern b) and a growth condition (pattern that is subtracted). Growing crystals in c).
- three levels are given as an example, but the number of levels is determined as needed.
- the defect behavior and radial defect distribution of the silicon single crystal are evaluated.
- two silicon single crystals pulled at the same level of crystal growth speed V are prepared, one silicon single crystal is sliced into wafers, LPD evaluation is performed after mirror polishing, and another silicon single crystal is obtained.
- the crystal is vertically divided in the direction of the pulling axis, and the cut sample is subjected to thermal oxidation treatment and Cu decoration treatment, and then the defect distribution is observed by X-ray topography (X-ray diffraction microscopic method). Check for presence.
- FIG. 8 is a diagram showing the inspection result in the area A of the pattern a shown in FIG. Fig. 8 (a) shows the axial distribution of the LPD number, Fig. 8 (b) shows the defect distribution evaluated for the vertically divided sample, and Fig. 8 (c) shows the relationship between the silicon single crystal length and the crystal growth rate V. Show.
- FIG. 9 is a diagram showing the inspection result in the area A of the pattern b shown in FIG. Fig. 9 (a) shows the axial distribution of LPD numbers, Fig. 9 (b) shows the defect distribution evaluated with the vertically divided sample, and Fig. 9 (c) shows the relationship between the silicon single crystal length and the crystal growth rate V. Show.
- FIG. 10 is a diagram showing the inspection result in the area A of the pattern c shown in FIG. Fig. 10 (a) shows the axial distribution of the LPD number, Fig. 10 (b) shows the defect distribution evaluated with the vertically divided sample, and Fig. 10 (c) shows the relationship between the silicon single crystal length and the crystal growth rate V. Indicates.
- the b2 area is determined as an OK area that satisfies the LPD standard and the ID standard, and the bl area is determined as an NG area that does not satisfy the LPD standard.
- the LPD standard is satisfied in the c2 region and no ID defect exists, but the LPD standard is not satisfied in the cl region, and the ID defect exists in the c3 region.
- I can confirm.
- the c2 region is determined as an OK region that satisfies the LPD standard and ID standard
- the c3 area is determined as an NG area if the ID standard is not satisfied.
- the LPD standard and the ID defect are regarded as quality assurance standards
- the allowable range of the crystal growth speed V and the GAP distance d is set
- the actual values are obtained using the log data.
- other control parameters in the CZ single crystal process for example, Ar flow rate, furnace pressure, GAP distance, crystal rotation speed
- the quality of the entire region of the silicon single crystal is evaluated using the log data of the control parameters at the time of crystal growth.
- the entire area of the silicon single crystal is evaluated, so the accuracy of the quality inspection is high.
- wafer processing is not performed on defective wafers, improving work efficiency.
- good woofers are not discarded and the yield is improved.
- FIG. 1 is a diagram showing a configuration of a CZ method single crystal pulling apparatus used in the present embodiment.
- FIG. 2 is a flowchart showing a manufacturing process of a silicon wafer including the present invention.
- FIG. 3 is a diagram showing an example of the correspondence between the actual value of the crystal growth rate and the allowable range of the crystal growth rate and the portion of the silicon single crystal.
- FIG. 4 is a graph showing the relationship between the crystal growth rate V and the number of LPDs at an arbitrary part of a silicon single crystal.
- FIG. 5 is a graph showing the relationship between the GAP distance d and the LPD number at an arbitrary part of a silicon single crystal.
- FIG. 6 is a graph showing the relationship between the crystal growth rate V and the GAP distance d.
- FIG. 7 is a diagram showing an example of setting the crystal growth rate V in the level test.
- FIG. 8 is a diagram showing a test result in area A of pattern a shown in FIG. Fig. 8 (a) is a diagram showing the axial distribution of the LPD number, Fig. 8 (b) is a diagram showing the defect distribution evaluated with the vertically divided sample, and Fig. 8 (c) is the length of the silicon single crystal.
- FIG. 6 is a diagram showing the relationship of crystal growth rate V.
- Fig. 9 is a diagram showing the inspection result in the area A of the pattern b shown in Fig. 7.
- Fig. 9 (a) is a diagram showing the axial distribution of the LPD number
- Fig. 9 (b) is a diagram showing the defect distribution evaluated with the vertically divided sample
- Fig. 9 (c) is the length of the silicon single crystal.
- FIG. 6 is a diagram showing the relationship of crystal growth rate V.
- FIG. 10 is a diagram showing an inspection result in an area A of the pattern c shown in FIG. Fig. 10 (a) is a diagram showing the axial distribution of the LPD number, Fig. 10 (b) is a diagram showing the defect distribution evaluated in the vertically divided sample, and Fig. 10 (c) is the length of the silicon single crystal.
- FIG. 5 is a diagram showing the relationship of crystal growth rate V.
- FIG. 11 is a schematic diagram showing how to obtain the allowable range of the crystal growth rate V by a level test.
- FIG. 12 is a flowchart showing the manufacturing process of silicon wafer.
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/659,061 US20080302295A1 (en) | 2004-08-04 | 2005-08-01 | Method of Evaluating Quality of Silicon Single Crystal |
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JP2004-229408 | 2004-08-04 | ||
JP2004229408A JP2006045007A (ja) | 2004-08-05 | 2004-08-05 | シリコン単結晶の品質評価方法 |
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US (1) | US20080302295A1 (ja) |
JP (1) | JP2006045007A (ja) |
KR (1) | KR20070048183A (ja) |
TW (1) | TW200625494A (ja) |
WO (1) | WO2006013828A1 (ja) |
Cited By (3)
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US8038895B2 (en) * | 2006-06-22 | 2011-10-18 | Siltronic Ag | Method and appartus for detection of mechanical defects in an ingot piece composed of semiconductor material |
CN111809230A (zh) * | 2019-04-12 | 2020-10-23 | 胜高股份有限公司 | 制备单晶硅时的间隙尺寸决定方法及单晶硅的制备方法 |
CN118171066A (zh) * | 2024-05-13 | 2024-06-11 | 西安理工大学 | 基于自适应典型变量分析的硅单晶生长过程故障检测方法 |
Families Citing this family (7)
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JP4432458B2 (ja) * | 2003-10-30 | 2010-03-17 | 信越半導体株式会社 | 単結晶の製造方法 |
KR100700082B1 (ko) * | 2005-06-14 | 2007-03-28 | 주식회사 실트론 | 결정 성장된 잉곳의 품질평가 방법 |
JP5407473B2 (ja) * | 2009-03-25 | 2014-02-05 | 株式会社Sumco | シリコンウェーハの製造方法 |
JP5577873B2 (ja) | 2010-06-16 | 2014-08-27 | 信越半導体株式会社 | 遮熱部材下端面と原料融液面との間の距離の測定方法、遮熱部材下端面と原料融液面との間の距離の制御方法、シリコン単結晶の製造方法 |
JP5967019B2 (ja) | 2013-05-31 | 2016-08-10 | 信越半導体株式会社 | 半導体ウェーハの評価方法 |
TWI617809B (zh) * | 2016-03-22 | 2018-03-11 | 中美矽晶製品股份有限公司 | 矽原料品質的檢驗方法 |
JP6897497B2 (ja) * | 2017-10-31 | 2021-06-30 | 株式会社Sumco | シリコンブロックの品質判定方法、シリコンブロックの品質判定プログラム、およびシリコン単結晶の製造方法 |
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JP2000178099A (ja) * | 1998-12-14 | 2000-06-27 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法およびこの方法で製造されたシリコン単結晶とシリコンウエーハ |
WO2001083859A1 (fr) * | 2000-05-01 | 2001-11-08 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Procede et appareil de mesure du niveau de bain de fusion |
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2004
- 2004-08-05 JP JP2004229408A patent/JP2006045007A/ja active Pending
-
2005
- 2005-07-29 TW TW094125864A patent/TW200625494A/zh unknown
- 2005-08-01 US US11/659,061 patent/US20080302295A1/en not_active Abandoned
- 2005-08-01 WO PCT/JP2005/014049 patent/WO2006013828A1/ja active Application Filing
- 2005-08-01 KR KR1020077002806A patent/KR20070048183A/ko not_active Application Discontinuation
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US8038895B2 (en) * | 2006-06-22 | 2011-10-18 | Siltronic Ag | Method and appartus for detection of mechanical defects in an ingot piece composed of semiconductor material |
CN111809230A (zh) * | 2019-04-12 | 2020-10-23 | 胜高股份有限公司 | 制备单晶硅时的间隙尺寸决定方法及单晶硅的制备方法 |
CN118171066A (zh) * | 2024-05-13 | 2024-06-11 | 西安理工大学 | 基于自适应典型变量分析的硅单晶生长过程故障检测方法 |
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TW200625494A (en) | 2006-07-16 |
KR20070048183A (ko) | 2007-05-08 |
JP2006045007A (ja) | 2006-02-16 |
US20080302295A1 (en) | 2008-12-11 |
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