WO2005117152A1 - Method for fabricating group iii nitride devices and devices fabricated using method - Google Patents

Method for fabricating group iii nitride devices and devices fabricated using method Download PDF

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Publication number
WO2005117152A1
WO2005117152A1 PCT/US2005/016987 US2005016987W WO2005117152A1 WO 2005117152 A1 WO2005117152 A1 WO 2005117152A1 US 2005016987 W US2005016987 W US 2005016987W WO 2005117152 A1 WO2005117152 A1 WO 2005117152A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
mirror
substrate
epitaxial
epitaxial semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/016987
Other languages
English (en)
French (fr)
Inventor
Shuji Nakamura
Steven Denbaars
John Edmond
Umesh Mishra
Charles Swoboda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Priority to JP2007527328A priority Critical patent/JP5468203B2/ja
Priority to EP05751127.1A priority patent/EP1763900B1/en
Priority to CA002564995A priority patent/CA2564995A1/en
Publication of WO2005117152A1 publication Critical patent/WO2005117152A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Definitions

  • GaN/AlGaN optoelectronic devices such as high efficiency blue, green and ultra-violet (UV) light emitting diodes (LED or LEDs) and lasers, and electronic devices such as high power microwave transistors.
  • LED or LEDs light emitting diodes
  • Some of the advantages of GaN is its 3. eV wide direct bandgap, high electron velocity (2xl0 7 cm/s) , high breakdown field (2x10 s V/cm) and the availability of heterostructures .
  • Typical LEDs can comprise an active region sandwiched between a p-type doped layer .
  • RCLED resonant cavity LED
  • RCLEDs are generally described in E. Fred Shubert, Light Emitting Diodes, Ca bidge University Press, Pages 198-211 (2003) . and typically comprise two oppositely doped epitaxial layers and mirrors on the oppositely doped layers such that the oppositely doped layers are sandwiched between the mirrors.
  • One of the mirrors has reflectivity that is lower than the reflectivity of the other mirror so that light exits the RCLED through the lower reflectivity mirror.
  • an epitaxial active region can be included between the oppositely doped layers.
  • an optional step 16 is included that comprises depositing a first mirror layer on the surface of the epitaxial layers opposite the substrate.
  • a first mirror layer is included that comprises depositing a first mirror layer on the surface of the epitaxial layers opposite the substrate.
  • this mirror helps increase the useful light extraction of the LED, and if an RCLED is being fabricated this mirror is necessary to generate the resonant cavity effect.
  • Different mirrors can be used, such as metal mirrors made of materials such as silver, gold, rhodium, platinum, palladium, gold tin or combinations thereof, which can be deposited on the surface usin a conventional method such as sputtering.
  • the second mirror layer 100 can be many different mirror types such as an n-type metal mirror, an n-type DBR or an n-type epitaxial Bragg reflector.
  • the second mirror layer 100 should have a lower reflectivity than the first mirror so that light exits the RCLED through the second mirror layer 100.
  • the first mirror layer 96 can also be any of a metal layer, a p-type Bragg reflector DBR, or a p-type epitaxial mirror.
  • Metallization layer 102 cab be deposited on the exposed surface of second mirror n-type layer 100 and can be any of gold, silver, rhodium, palladium, platinum or gold tin for bonding.
  • second mirror layer can be an n-type metal mirror when first mirror layer is a p-type DBR.
  • FIG. 17 shows one embodiment of an RCLED 150 according to the present invention that can be fabricated using the method 10 in FIG. 1. As described above, RCLEDs require that the epitaxial structure 36 be thin, having a thickness of approximately one wavelength of the light being emitted by the structure 36. The method 10 provides for the fabrication of high quality Group-Ill nitride thin layers particularly adapted to RCLEDs.
  • the first and second mirror layers 152, 154 can be any of those described above and the RCLED 150 also comprises a contact metal layer 156 on the second mirror layer 154.

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
PCT/US2005/016987 2004-05-18 2005-05-17 Method for fabricating group iii nitride devices and devices fabricated using method Ceased WO2005117152A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007527328A JP5468203B2 (ja) 2004-05-18 2005-05-17 第３族窒化物デバイスを製造する方法およびその方法を使用して製造されたデバイス
EP05751127.1A EP1763900B1 (en) 2004-05-18 2005-05-17 Method for fabricating group iii nitride devices
CA002564995A CA2564995A1 (en) 2004-05-18 2005-05-17 Method for fabricating group iii nitride devices and devices fabricated using method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/848,937 2004-05-18
US10/848,937 US7332365B2 (en) 2004-05-18 2004-05-18 Method for fabricating group-III nitride devices and devices fabricated using method

Publications (1)

Publication Number Publication Date
WO2005117152A1 true WO2005117152A1 (en) 2005-12-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/016987 Ceased WO2005117152A1 (en) 2004-05-18 2005-05-17 Method for fabricating group iii nitride devices and devices fabricated using method

Country Status (8)

Country Link
US (1) US7332365B2 (https=)
EP (1) EP1763900B1 (https=)
JP (1) JP5468203B2 (https=)
KR (1) KR20070013324A (https=)
CN (1) CN1957481A (https=)
CA (1) CA2564995A1 (https=)
TW (1) TWI390759B (https=)
WO (1) WO2005117152A1 (https=)

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US8556469B2 (en) 2010-12-06 2013-10-15 Cree, Inc. High efficiency total internal reflection optic for solid state lighting luminaires
US8680556B2 (en) 2011-03-24 2014-03-25 Cree, Inc. Composite high reflectivity layer
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US8710536B2 (en) 2008-12-08 2014-04-29 Cree, Inc. Composite high reflectivity layer
US8764224B2 (en) 2010-08-12 2014-07-01 Cree, Inc. Luminaire with distributed LED sources
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
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JP2007538408A (ja) 2007-12-27
EP1763900A1 (en) 2007-03-21
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JP5468203B2 (ja) 2014-04-09
CA2564995A1 (en) 2005-12-08
EP1763900B1 (en) 2015-06-24
TWI390759B (zh) 2013-03-21
US20060049411A1 (en) 2006-03-09
US7332365B2 (en) 2008-02-19

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