WO2005048336A1 - Dispositif d'evacuation de liquide - Google Patents

Dispositif d'evacuation de liquide Download PDF

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Publication number
WO2005048336A1
WO2005048336A1 PCT/JP2004/016667 JP2004016667W WO2005048336A1 WO 2005048336 A1 WO2005048336 A1 WO 2005048336A1 JP 2004016667 W JP2004016667 W JP 2004016667W WO 2005048336 A1 WO2005048336 A1 WO 2005048336A1
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WO
WIPO (PCT)
Prior art keywords
substrate
liquid
linear
nozzle
nozzles
Prior art date
Application number
PCT/JP2004/016667
Other languages
English (en)
Japanese (ja)
Inventor
Kouichi Inoue
Tomoki Kondo
Osamu Fujine
Original Assignee
Sumitomo Precision Products Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co., Ltd filed Critical Sumitomo Precision Products Co., Ltd
Publication of WO2005048336A1 publication Critical patent/WO2005048336A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Definitions

  • the present invention relates to a liquid removal apparatus that removes a processing liquid remaining on the surface of a substrate at an outlet of a processing zone using a specific processing liquid in a substrate transfer type substrate processing equipment called a flat flow type. .
  • an integrated circuit is formed on the surface of a large-area glass substrate by repeatedly performing a resist application, image development, etching, and resist peeling process on the surface of a large-sized glass substrate as a material.
  • One of the typical processing methods is a substrate transfer method called flat flow, in which various processing is performed on the surface of a substrate while the substrate is transported in a horizontal direction.
  • an etchant is supplied to the surface of a substrate that is conveyed in a horizontal direction in a horizontal posture, and then the surface is washed with pure water.
  • draining is performed to remove the etching liquid remaining on the surface of the substrate to the extent that it does not dry, in order to prevent the etching liquid from entering the next washing zone.
  • an air knife type that ejects a slit nozzle cartridge in a thin film shape is frequently used (see Patent Document 1 and Patent Document 2).
  • Patent Document 1 JP-A-8-2364987
  • Patent Document 2 JP 2001-50660 A
  • the collision angle of the air knife is generally tilted in the counter direction with respect to the substrate surface in order to enhance the liquid draining effect.
  • the slit nozzle is often inclined laterally with respect to the substrate transport direction. This is a force that causes the collision of air to start from the corner of the substrate due to the inclination of the slit nozzle, thereby suppressing the liquid from scattering.
  • the substrate is inclined with respect to the substrate transport direction, there is a problem that residual liquid collects at corners located diagonally. In order to solve this problem, it has been considered to combine a short dedicated auxiliary nozzle for locally draining the corner (see Patent Reference 2).
  • An object of the present invention is to remove residual liquid from the surface of a large substrate as much as possible without drying the surface even when the substrate is conveyed at high speed, and to reduce the thickness of the liquid film remaining after the removal. It is an object of the present invention to provide a substrate processing apparatus capable of making the surface uniform and suppressing the liquid scattering.
  • the liquid draining apparatus of the present invention is used in a transport type substrate processing facility for supplying a processing liquid to the surface of a substrate to be transported and performing various types of processing, and
  • the liquid removal device that removes the processing liquid remaining on the surface of the substrate
  • linear nozzles that perform liquid removal by air knife over the entire width of the substrate are arranged in parallel in two stages in the substrate transfer direction, and the straight nozzles are arranged in parallel.
  • the nozzle is inclined at an angle of 5 to 30 degrees in the same direction as the transport direction of the substrate.
  • the inclination angle ⁇ 1 of the linear nozzle with respect to the substrate transfer direction is the inclination angle ⁇ 1 of the linear nozzle with respect to the substrate transfer direction. If the angle is less than 5 degrees, the liquid scattering when the corner of the substrate enters the air knife becomes remarkable. If it exceeds 30 degrees, processing unevenness occurs in the substrate width direction. Therefore, the inclination angle ⁇ 1 is preferably 5 to 30 degrees. A particularly preferable inclination angle ⁇ 1 is 10 to 20 degrees.
  • the nozzle interval L is preferably from 50 to 300 mm, more preferably from 100 to 200 mm. If this interval is too short, there is a risk that air interference will occur between the first-stage air knife and the second-stage air knife, and the intended effect may not be obtained. If this interval is too large, when the liquid is removed in the first step, the film pressure is still non-uniform, so that the non-uniform processing proceeds up to the second step, resulting in processing unevenness.
  • the force for making the second stage the same as the first stage is smaller than the first stage, and specifically, it is preferable that the discharge amount of the first stage be 1 and 0.5-1. .
  • the substrate may be dried when the discharge amount of the second stage is larger than the discharge amount of the first stage, and when the discharge amount of the second stage is extremely smaller than the discharge amount of the first stage, the uniformity of the liquid thickness is reduced. It is because it decreases. If the substrate dries, uneven spots will occur and cause processing failure.
  • the reference first-stage discharge amount is 1000 to 2000 LZmin per 1300 mm of substrate width.
  • the angle of inclination ⁇ 2 of the air knife with respect to the substrate surface is represented by an angle with respect to a vertical line, and 15-45 degrees is preferred in the counter direction.
  • the first stage is preferably larger than the second stage.
  • Particularly preferred inclination angles ⁇ 2 are 25-30 degrees for the first stage and 20-25 degrees for the second stage. If the inclination angle is small, the liquid draining effect becomes insufficient, and if it is too large, liquid scattering becomes remarkable. This is why it is desirable to increase the inclination angle ⁇ 2 of the first stage, which gives priority to the drainage effect.
  • the linear nozzle force and the distance D to the substrate surface are preferably 3 to 10 mm, and particularly preferably 5 to 7 mm. Linear nozzle force If the distance D to the substrate surface is too small, turbulence will occur, and if it is too large, the drainage effect will decrease.
  • a linear nozzle is a force that is usually a slit nozzle.
  • a plurality of flat nozzles may be arranged so as to form an air knife! /.
  • the liquid draining device of the present invention is particularly effective when a large substrate of 730 X 920 mm or more, at which the liquid draining effect is insufficient or unstable, is conveyed at a high speed of 200 mmZsec or more.
  • the liquid draining device of the present invention is also effective for removing residual liquid remaining on the front surface of the substrate. Regarding residual liquid adhering and remaining on the back surface of the substrate, for example, even if the liquid draining device of the present invention is not necessarily used, for example, A one-stage liquid drainage device can be used sufficiently.
  • linear nozzles for performing liquid removal by an air knife over the entire width of the substrate are arranged in parallel in two stages in the substrate transfer direction, and the two linear nozzles are arranged in parallel.
  • FIG. 1 is a plan view of a liquid draining device showing an embodiment of the present invention
  • FIG. 2 is a diagram showing an arrow AA in FIG.
  • the liquid draining device of the present embodiment is used for etching equipment used for manufacturing a glass substrate for a liquid crystal panel.
  • Etching equipment is controlled by a roller-type substrate transfer mechanism 20.
  • the substrate 10 is sequentially passed through a chemical treatment zone and a washing zone, so that a conductive film such as aluminum is coated with a resist. Selectively remove parts.
  • the liquid draining device of the present embodiment is provided at an outlet of a chemical solution processing zone for supplying an etching solution to the surface of the substrate 10, and more specifically, is provided above the outlet. .
  • This liquid draining device has two slit nozzles 30 and 40 arranged in parallel in the transport direction of the substrate 10. Each slit nozzle is configured to discharge an air in a curtain shape from a narrow slit continuous in the longitudinal direction to form air knives 31 and 41 continuous in the nozzle longitudinal direction.
  • Each of the slit nozzles 30 and 40 is inclined at an angle of ⁇ 2 with respect to a vertical line so that the air knives 31 and 41 impinge and collide with the substrate 10 in the force center direction with respect to the transport direction of the substrate 10.
  • the angle of inclination ⁇ 2 is set to 25-30 degrees for the slit nozzle 30 on the upstream side and 20-25 degrees for the slit nozzle 40 on the downstream side.
  • the distance D between the slit nozzles 30, 40 is set to 100-200 mm, and the distance L (vertical height) from the slit nozzles 30, 40 to the surface of the substrate 10 is set to 5-7 mm. You.
  • the air discharge amount from the slit nozzles 30, 40 is set to be equal to or higher than the discharge amount force from the slit nozzle 30 located on the upstream side and the discharge amount force from the slit nozzle 40 located on the downstream side.
  • the slit widths of the slit nozzles 30 and 40 are the same. Therefore, the discharge pressure is adjusted to achieve this discharge amount balance.
  • 0.5-1 is appropriate as the ratio of the latter discharge amount when the former discharge amount is set to 1.
  • a slit nozzle 50 provided below the substrate transfer line is provided for an etchant adhering to the back surface of the substrate 10.
  • the slit nozzle 50 is provided opposite to the slit nozzle 30 with the transfer line of the substrate 10 interposed therebetween.
  • the slit nozzle 50 is inclined with respect to the transfer line of the substrate 10, and the air knife 51 to be formed is formed on the back surface of the substrate 10. Power It is arranged obliquely with respect to the vertical line so that it collides in the center direction.
  • the etching liquid is supplied in the chemical processing zone of the etching apparatus, it is discharged from the slit nozzles 30 and 40 provided on the substrate transfer line at the outlet thereof.
  • the etching liquid remaining on the surface of the substrate 10 is gradually removed by air, that is, the air knives 31 and 41.
  • the etching liquid remaining on the back surface of the substrate 10 is removed by air discharged from a slit nozzle 50 provided below the substrate transfer line, that is, an air knife 51.
  • the liquid draining apparatus of the present embodiment after almost half of the etching liquid on the substrate 10 is removed by the air knife 31 formed by the first-stage slit nozzle 30, the two-step The residual liquid is removed by the air knife 41 formed by the slit nozzle 40 of the eye. Since the burden of the second-stage air knife 41 is reduced, the minimum etching liquid that can prevent drying can be left on the substrate 10 to remove the etching liquid, and the thickness of the remaining etching liquid can be reduced. It can be made uniform.
  • the two slit nozzles 30, 40 are inclined sideways with respect to the transport direction of the substrate 10. Therefore, the air knives 31 and 41 formed by the slit nozzles 30 and 40 gradually enter the corners of the substrate 10. For this reason, liquid scattering is suppressed. Also, with respect to this liquid scattering, the two slit nozzles 30 and 40 are arranged in two stages, so that drastic suppression can be achieved.
  • the liquid draining device is used for etching equipment, but it can be used for other wet processing including washing with water.
  • the substrate is horizontally supported. However, an inclined transfer system in which the substrate is transferred while being tilted to the side may be employed.
  • FIG. 1 is a plan view of a liquid draining device showing one embodiment of the present invention.
  • FIG. 2 is a diagram showing an arrow AA in FIG. 1.

Abstract

Le liquide résiduel sur la surface d'un substrat de grande taille peut être retiré dans une large mesure sans séchage de la surface, même en cas de déplacement du substrat à grande vitesse. De plus, l'épaisseur du film de liquide restant après évacuation est uniformisée, sans diffraction du liquide lors du processus d'élimination. A cette fin, on dispose les buses linéaires (30, 40) de séparateur d'air sur toute la largeur du substrat en deux étages dans le sens d'avance du substrat (10). Les buses linéaires (30, 40) sont inclinées de 5 à 30 ° sur le côté par rapport au sens d'avance du substrat (10). La distance (D) entre les buses linéaires (30, 40) est comprise entre 50 et 300 mm. Le volume d'air sortant d'une buse linéaire (40) est égal ou inférieur à celui émis par une buse linéaire (30). L'angle d'inclinaison (υ2) d'un séparateur d'air par rapport à la verticale est réglé à 25-30° pour la buse linéaire (30) et à 20-25 ° pour la buse linéaire (40).
PCT/JP2004/016667 2003-11-14 2004-11-10 Dispositif d'evacuation de liquide WO2005048336A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003385130A JP4057993B2 (ja) 2003-11-14 2003-11-14 液切り装置
JP2003-385130 2003-11-14

Publications (1)

Publication Number Publication Date
WO2005048336A1 true WO2005048336A1 (fr) 2005-05-26

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JP (1) JP4057993B2 (fr)
WO (1) WO2005048336A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1803321B (zh) * 2006-01-17 2010-05-12 友达光电股份有限公司 液刀机构
WO2016086924A1 (fr) * 2014-12-05 2016-06-09 Rena Gmbh Dispositif de traitement de substrats
JP2020527689A (ja) * 2017-07-14 2020-09-10 レナ テクノロジー ゲーエムベーハーＲＥＮＡ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＧｍｂＨ 基板を乾燥させるための乾燥装置及び方法
KR20200118499A (ko) * 2018-02-27 2020-10-15 코닝 인코포레이티드 물질 시트 건조 장치 및 방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100889343B1 (ko) * 2007-09-27 2009-03-18 세메스 주식회사 나이프 어셈블리 및 이를 갖는 기판 처리 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204489A (ja) * 1998-01-12 1999-07-30 Dainippon Screen Mfg Co Ltd 基板乾燥装置及び基板乾燥方法
JP2000266465A (ja) * 1999-03-17 2000-09-29 Dainippon Screen Mfg Co Ltd 基板乾燥装置および基板乾燥方法
JP2002231684A (ja) * 2001-01-30 2002-08-16 Takemoto Denki Seisakusho:Kk 乾燥装置
WO2002073672A1 (fr) * 2001-03-14 2002-09-19 Sumitomo Precision Products Co., Ltd. Dispositif de traitement de substrat
JP2003083675A (ja) * 2001-09-10 2003-03-19 Tokyo Electron Ltd 基板乾燥装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204489A (ja) * 1998-01-12 1999-07-30 Dainippon Screen Mfg Co Ltd 基板乾燥装置及び基板乾燥方法
JP2000266465A (ja) * 1999-03-17 2000-09-29 Dainippon Screen Mfg Co Ltd 基板乾燥装置および基板乾燥方法
JP2002231684A (ja) * 2001-01-30 2002-08-16 Takemoto Denki Seisakusho:Kk 乾燥装置
WO2002073672A1 (fr) * 2001-03-14 2002-09-19 Sumitomo Precision Products Co., Ltd. Dispositif de traitement de substrat
JP2003083675A (ja) * 2001-09-10 2003-03-19 Tokyo Electron Ltd 基板乾燥装置

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1803321B (zh) * 2006-01-17 2010-05-12 友达光电股份有限公司 液刀机构
WO2016086924A1 (fr) * 2014-12-05 2016-06-09 Rena Gmbh Dispositif de traitement de substrats
CN107210254A (zh) * 2014-12-05 2017-09-26 雷纳技术有限责任公司 用于处理基板的设备
JP2017537858A (ja) * 2014-12-05 2017-12-21 レナ テクノロジー ゲーエムベーハーＲＥＮＡ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＧｍｂＨ サブストレートを処理するための装置
US10529606B2 (en) 2014-12-05 2020-01-07 RENA Technologies GmbH Device for treating substrates
US11823931B2 (en) 2014-12-05 2023-11-21 RENA Technologies GmbH Method and device for treating substrates
US11270901B2 (en) 2014-12-05 2022-03-08 RENA Technologies GmbH Method and device for treating substrates
JP7273788B2 (ja) 2017-07-14 2023-05-15 レナ テクノロジー ゲーエムベーハー 基板を乾燥させるための乾燥装置及び方法
JP2020527689A (ja) * 2017-07-14 2020-09-10 レナ テクノロジー ゲーエムベーハーＲＥＮＡ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＧｍｂＨ 基板を乾燥させるための乾燥装置及び方法
KR20200118499A (ko) * 2018-02-27 2020-10-15 코닝 인코포레이티드 물질 시트 건조 장치 및 방법
TWI799520B (zh) * 2018-02-27 2023-04-21 美商康寧公司 用於乾化材料片的設備及方法
CN112020481B (zh) * 2018-02-27 2023-02-03 康宁公司 用于干化材料片的设备和方法
CN112020481A (zh) * 2018-02-27 2020-12-01 康宁公司 用于干化材料片的设备和方法
KR102655395B1 (ko) * 2018-02-27 2024-04-05 코닝 인코포레이티드 물질 시트 건조 장치 및 방법

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