WO2005040459B1 - Procedes et compositions pour galvanoplastie - Google Patents

Procedes et compositions pour galvanoplastie

Info

Publication number
WO2005040459B1
WO2005040459B1 PCT/US2004/033229 US2004033229W WO2005040459B1 WO 2005040459 B1 WO2005040459 B1 WO 2005040459B1 US 2004033229 W US2004033229 W US 2004033229W WO 2005040459 B1 WO2005040459 B1 WO 2005040459B1
Authority
WO
WIPO (PCT)
Prior art keywords
copper
seed layer
electroplating
sulfuric acid
deposition
Prior art date
Application number
PCT/US2004/033229
Other languages
English (en)
Other versions
WO2005040459A2 (fr
WO2005040459A3 (fr
Filing date
Publication date
Priority claimed from US10/688,420 external-priority patent/US20050081744A1/en
Application filed filed Critical
Priority to JP2006535564A priority Critical patent/JP2007508461A/ja
Priority to EP04794546A priority patent/EP1680535A4/fr
Publication of WO2005040459A2 publication Critical patent/WO2005040459A2/fr
Publication of WO2005040459A3 publication Critical patent/WO2005040459A3/fr
Publication of WO2005040459B1 publication Critical patent/WO2005040459B1/fr

Links

Abstract

La présente invention concerne des procédés et compositions de galvanoplastie permettant de combler de métallisation des microstructures évidées dans une pièce micro-électronique telle qu'une plaquette de semi-conducteurs. Ces compositions sont généralement un mélange de cuivre et d'acide sulfurique, à raison de 0,3 à 0,5 g de cuivre pour 11 g de litre de solution. On peut également pousser à la limite de saturation la concentration du cuivre dans l'acide sulfurique, c'est-à-dire entre environ 65 et environ 150 g/l. Ces compositions admettent éventuellement les additifs conventionnels tels que les accélérateurs, les suppresseurs, les halogénures et/ou les niveleurs. L'invention concerne ainsi des procédés de dépôt électrochimique de matériaux conducteurs dans des structures telles que des tranchées et/ou des trous de contact réalisés sur des pièces semi-conductrices, et notamment des procédés convenant particulièrement dans les réacteurs à anodes multiples utilisant les solutions de galvanoplastie de l'invention.
PCT/US2004/033229 2003-10-16 2004-10-08 Procedes et compositions pour galvanoplastie WO2005040459A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006535564A JP2007508461A (ja) 2003-10-16 2004-10-08 電気鍍金組成物及び電気鍍金方法
EP04794546A EP1680535A4 (fr) 2003-10-16 2004-10-08 Procedes et compositions pour galvanoplastie

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/688,420 US20050081744A1 (en) 2003-10-16 2003-10-16 Electroplating compositions and methods for electroplating
US10/688,420 2003-10-16

Publications (3)

Publication Number Publication Date
WO2005040459A2 WO2005040459A2 (fr) 2005-05-06
WO2005040459A3 WO2005040459A3 (fr) 2006-01-12
WO2005040459B1 true WO2005040459B1 (fr) 2006-03-02

Family

ID=34521165

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/033229 WO2005040459A2 (fr) 2003-10-16 2004-10-08 Procedes et compositions pour galvanoplastie

Country Status (6)

Country Link
US (1) US20050081744A1 (fr)
EP (1) EP1680535A4 (fr)
JP (1) JP2007508461A (fr)
CN (1) CN1867703A (fr)
TW (1) TW200516176A (fr)
WO (1) WO2005040459A2 (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8236159B2 (en) 1999-04-13 2012-08-07 Applied Materials Inc. Electrolytic process using cation permeable barrier
US8852417B2 (en) 1999-04-13 2014-10-07 Applied Materials, Inc. Electrolytic process using anion permeable barrier
US20060157355A1 (en) * 2000-03-21 2006-07-20 Semitool, Inc. Electrolytic process using anion permeable barrier
US20060189129A1 (en) * 2000-03-21 2006-08-24 Semitool, Inc. Method for applying metal features onto barrier layers using ion permeable barriers
US7628898B2 (en) * 2001-03-12 2009-12-08 Semitool, Inc. Method and system for idle state operation
EP1422320A1 (fr) * 2002-11-21 2004-05-26 Shipley Company, L.L.C. Bain d' électroplacage de cuivre
US7232513B1 (en) * 2004-06-29 2007-06-19 Novellus Systems, Inc. Electroplating bath containing wetting agent for defect reduction
TW200632147A (fr) * 2004-11-12 2006-09-16
US20070043474A1 (en) * 2005-08-17 2007-02-22 Semitool, Inc. Systems and methods for predicting process characteristics of an electrochemical treatment process
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
JP2009041097A (ja) * 2007-08-10 2009-02-26 Rohm & Haas Electronic Materials Llc 銅めっき方法
JP5442188B2 (ja) * 2007-08-10 2014-03-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 銅めっき液組成物
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US8268155B1 (en) * 2009-10-05 2012-09-18 Novellus Systems, Inc. Copper electroplating solutions with halides
TWI397615B (zh) * 2010-04-01 2013-06-01 Zhen Ding Technology Co Ltd 電鍍裝置
EP2518187A1 (fr) * 2011-04-26 2012-10-31 Atotech Deutschland GmbH Bain d'acide aqueux pour le dépôt électrolytique de cuivre
US9416459B2 (en) * 2011-06-06 2016-08-16 United Microelectronics Corp. Electrical chemical plating process
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
US10648096B2 (en) * 2014-12-12 2020-05-12 Infineon Technologies Ag Electrolyte, method of forming a copper layer and method of forming a chip
US9758896B2 (en) * 2015-02-12 2017-09-12 Applied Materials, Inc. Forming cobalt interconnections on a substrate
US10749278B2 (en) * 2016-01-15 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method of electroplating metal into recessed feature and electroplating layer in recessed feature
CN107326407B (zh) * 2017-07-25 2018-11-16 上海新阳半导体材料股份有限公司 整平剂、含其的金属电镀组合物及制备方法、应用
CN107858728B (zh) * 2017-12-20 2019-08-23 武汉新芯集成电路制造有限公司 Tsv电镀方法
TWI741466B (zh) * 2019-12-27 2021-10-01 鉑識科技股份有限公司 利用水/醇溶性有機添加劑製備之奈米雙晶層及其製備方法
CN114214682B (zh) * 2021-12-22 2023-05-30 东莞市金瑞五金股份有限公司 一种工件镀铜的电镀工艺及其电镀设备

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252196A (en) * 1991-12-05 1993-10-12 Shipley Company Inc. Copper electroplating solutions and processes
US6413436B1 (en) * 1999-01-27 2002-07-02 Semitool, Inc. Selective treatment of the surface of a microelectronic workpiece
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys
US6024857A (en) * 1997-10-08 2000-02-15 Novellus Systems, Inc. Electroplating additive for filling sub-micron features
EP1019954B1 (fr) * 1998-02-04 2013-05-15 Applied Materials, Inc. Procédé et appareil de recuit a basse temperature intervenant après dépot électrolytique de microstructures de cuivre destinées à un dispositif micro-electronique
US6331490B1 (en) * 1998-03-13 2001-12-18 Semitool, Inc. Process for etching thin-film layers of a workpiece used to form microelectric circuits or components
TW593731B (en) * 1998-03-20 2004-06-21 Semitool Inc Apparatus for applying a metal structure to a workpiece
US6565729B2 (en) * 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6517894B1 (en) * 1998-04-30 2003-02-11 Ebara Corporation Method for plating a first layer on a substrate and a second layer on the first layer
US6228232B1 (en) * 1998-07-09 2001-05-08 Semitool, Inc. Reactor vessel having improved cup anode and conductor assembly
US6074544A (en) * 1998-07-22 2000-06-13 Novellus Systems, Inc. Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
US6793796B2 (en) * 1998-10-26 2004-09-21 Novellus Systems, Inc. Electroplating process for avoiding defects in metal features of integrated circuit devices
US20030038035A1 (en) * 2001-05-30 2003-02-27 Wilson Gregory J. Methods and systems for controlling current in electrochemical processing of microelectronic workpieces
JP2001020077A (ja) * 1999-07-07 2001-01-23 Sony Corp 無電解めっき方法及び無電解めっき液
EP1069210A1 (fr) * 1999-07-12 2001-01-17 Applied Materials, Inc. Procédé pour le dépot électrochimique de structures ayant un rapport de forme élevé
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
KR100659544B1 (ko) * 1999-11-12 2006-12-19 에바라 유지라이토 코포레이션 리미티드 비아 필링 방법
US6491806B1 (en) * 2000-04-27 2002-12-10 Intel Corporation Electroplating bath composition
US20020112964A1 (en) * 2000-07-12 2002-08-22 Applied Materials, Inc. Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths
EP1308541A1 (fr) * 2001-10-04 2003-05-07 Shipley Company LLC Bain et procédé pour le dépôt d'une couche metallique sur un substrat
US6833063B2 (en) * 2001-12-21 2004-12-21 Nutool, Inc. Electrochemical edge and bevel cleaning process and system
US7247223B2 (en) * 2002-05-29 2007-07-24 Semitool, Inc. Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces

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