WO2005040459B1 - Procedes et compositions pour galvanoplastie - Google Patents
Procedes et compositions pour galvanoplastieInfo
- Publication number
- WO2005040459B1 WO2005040459B1 PCT/US2004/033229 US2004033229W WO2005040459B1 WO 2005040459 B1 WO2005040459 B1 WO 2005040459B1 US 2004033229 W US2004033229 W US 2004033229W WO 2005040459 B1 WO2005040459 B1 WO 2005040459B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- seed layer
- electroplating
- sulfuric acid
- deposition
- Prior art date
Links
- 238000009713 electroplating Methods 0.000 title claims abstract 12
- 239000000203 mixture Substances 0.000 title claims abstract 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract 9
- 229910052802 copper Inorganic materials 0.000 claims abstract 9
- 239000010949 copper Substances 0.000 claims abstract 9
- 238000000151 deposition Methods 0.000 claims abstract 4
- 230000001629 suppression Effects 0.000 claims abstract 4
- 238000001465 metallisation Methods 0.000 claims abstract 3
- 239000002184 metal Substances 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 5
- 239000012530 fluid Substances 0.000 claims 4
- 238000005137 deposition process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000002253 acid Substances 0.000 claims 2
- 230000002708 enhancing Effects 0.000 claims 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000654 additive Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
Abstract
La présente invention concerne des procédés et compositions de galvanoplastie permettant de combler de métallisation des microstructures évidées dans une pièce micro-électronique telle qu'une plaquette de semi-conducteurs. Ces compositions sont généralement un mélange de cuivre et d'acide sulfurique, à raison de 0,3 à 0,5 g de cuivre pour 11 g de litre de solution. On peut également pousser à la limite de saturation la concentration du cuivre dans l'acide sulfurique, c'est-à-dire entre environ 65 et environ 150 g/l. Ces compositions admettent éventuellement les additifs conventionnels tels que les accélérateurs, les suppresseurs, les halogénures et/ou les niveleurs. L'invention concerne ainsi des procédés de dépôt électrochimique de matériaux conducteurs dans des structures telles que des tranchées et/ou des trous de contact réalisés sur des pièces semi-conductrices, et notamment des procédés convenant particulièrement dans les réacteurs à anodes multiples utilisant les solutions de galvanoplastie de l'invention.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006535564A JP2007508461A (ja) | 2003-10-16 | 2004-10-08 | 電気鍍金組成物及び電気鍍金方法 |
EP04794546A EP1680535A4 (fr) | 2003-10-16 | 2004-10-08 | Procedes et compositions pour galvanoplastie |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/688,420 US20050081744A1 (en) | 2003-10-16 | 2003-10-16 | Electroplating compositions and methods for electroplating |
US10/688,420 | 2003-10-16 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2005040459A2 WO2005040459A2 (fr) | 2005-05-06 |
WO2005040459A3 WO2005040459A3 (fr) | 2006-01-12 |
WO2005040459B1 true WO2005040459B1 (fr) | 2006-03-02 |
Family
ID=34521165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/033229 WO2005040459A2 (fr) | 2003-10-16 | 2004-10-08 | Procedes et compositions pour galvanoplastie |
Country Status (6)
Country | Link |
---|---|
US (1) | US20050081744A1 (fr) |
EP (1) | EP1680535A4 (fr) |
JP (1) | JP2007508461A (fr) |
CN (1) | CN1867703A (fr) |
TW (1) | TW200516176A (fr) |
WO (1) | WO2005040459A2 (fr) |
Families Citing this family (28)
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US8236159B2 (en) | 1999-04-13 | 2012-08-07 | Applied Materials Inc. | Electrolytic process using cation permeable barrier |
US8852417B2 (en) | 1999-04-13 | 2014-10-07 | Applied Materials, Inc. | Electrolytic process using anion permeable barrier |
US20060157355A1 (en) * | 2000-03-21 | 2006-07-20 | Semitool, Inc. | Electrolytic process using anion permeable barrier |
US20060189129A1 (en) * | 2000-03-21 | 2006-08-24 | Semitool, Inc. | Method for applying metal features onto barrier layers using ion permeable barriers |
US7628898B2 (en) * | 2001-03-12 | 2009-12-08 | Semitool, Inc. | Method and system for idle state operation |
EP1422320A1 (fr) * | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Bain d' électroplacage de cuivre |
US7232513B1 (en) * | 2004-06-29 | 2007-06-19 | Novellus Systems, Inc. | Electroplating bath containing wetting agent for defect reduction |
TW200632147A (fr) * | 2004-11-12 | 2006-09-16 | ||
US20070043474A1 (en) * | 2005-08-17 | 2007-02-22 | Semitool, Inc. | Systems and methods for predicting process characteristics of an electrochemical treatment process |
US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
TWI341554B (en) * | 2007-08-02 | 2011-05-01 | Enthone | Copper metallization of through silicon via |
JP2009041097A (ja) * | 2007-08-10 | 2009-02-26 | Rohm & Haas Electronic Materials Llc | 銅めっき方法 |
JP5442188B2 (ja) * | 2007-08-10 | 2014-03-12 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 銅めっき液組成物 |
US7905994B2 (en) * | 2007-10-03 | 2011-03-15 | Moses Lake Industries, Inc. | Substrate holder and electroplating system |
US20090188553A1 (en) * | 2008-01-25 | 2009-07-30 | Emat Technology, Llc | Methods of fabricating solar-cell structures and resulting solar-cell structures |
US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
US8268155B1 (en) * | 2009-10-05 | 2012-09-18 | Novellus Systems, Inc. | Copper electroplating solutions with halides |
TWI397615B (zh) * | 2010-04-01 | 2013-06-01 | Zhen Ding Technology Co Ltd | 電鍍裝置 |
EP2518187A1 (fr) * | 2011-04-26 | 2012-10-31 | Atotech Deutschland GmbH | Bain d'acide aqueux pour le dépôt électrolytique de cuivre |
US9416459B2 (en) * | 2011-06-06 | 2016-08-16 | United Microelectronics Corp. | Electrical chemical plating process |
US9768060B2 (en) * | 2014-10-29 | 2017-09-19 | Applied Materials, Inc. | Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD |
US10648096B2 (en) * | 2014-12-12 | 2020-05-12 | Infineon Technologies Ag | Electrolyte, method of forming a copper layer and method of forming a chip |
US9758896B2 (en) * | 2015-02-12 | 2017-09-12 | Applied Materials, Inc. | Forming cobalt interconnections on a substrate |
US10749278B2 (en) * | 2016-01-15 | 2020-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of electroplating metal into recessed feature and electroplating layer in recessed feature |
CN107326407B (zh) * | 2017-07-25 | 2018-11-16 | 上海新阳半导体材料股份有限公司 | 整平剂、含其的金属电镀组合物及制备方法、应用 |
CN107858728B (zh) * | 2017-12-20 | 2019-08-23 | 武汉新芯集成电路制造有限公司 | Tsv电镀方法 |
TWI741466B (zh) * | 2019-12-27 | 2021-10-01 | 鉑識科技股份有限公司 | 利用水/醇溶性有機添加劑製備之奈米雙晶層及其製備方法 |
CN114214682B (zh) * | 2021-12-22 | 2023-05-30 | 东莞市金瑞五金股份有限公司 | 一种工件镀铜的电镀工艺及其电镀设备 |
Family Cites Families (22)
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US5252196A (en) * | 1991-12-05 | 1993-10-12 | Shipley Company Inc. | Copper electroplating solutions and processes |
US6413436B1 (en) * | 1999-01-27 | 2002-07-02 | Semitool, Inc. | Selective treatment of the surface of a microelectronic workpiece |
US5972192A (en) * | 1997-07-23 | 1999-10-26 | Advanced Micro Devices, Inc. | Pulse electroplating copper or copper alloys |
US6024857A (en) * | 1997-10-08 | 2000-02-15 | Novellus Systems, Inc. | Electroplating additive for filling sub-micron features |
EP1019954B1 (fr) * | 1998-02-04 | 2013-05-15 | Applied Materials, Inc. | Procédé et appareil de recuit a basse temperature intervenant après dépot électrolytique de microstructures de cuivre destinées à un dispositif micro-electronique |
US6331490B1 (en) * | 1998-03-13 | 2001-12-18 | Semitool, Inc. | Process for etching thin-film layers of a workpiece used to form microelectric circuits or components |
TW593731B (en) * | 1998-03-20 | 2004-06-21 | Semitool Inc | Apparatus for applying a metal structure to a workpiece |
US6565729B2 (en) * | 1998-03-20 | 2003-05-20 | Semitool, Inc. | Method for electrochemically depositing metal on a semiconductor workpiece |
US6517894B1 (en) * | 1998-04-30 | 2003-02-11 | Ebara Corporation | Method for plating a first layer on a substrate and a second layer on the first layer |
US6228232B1 (en) * | 1998-07-09 | 2001-05-08 | Semitool, Inc. | Reactor vessel having improved cup anode and conductor assembly |
US6074544A (en) * | 1998-07-22 | 2000-06-13 | Novellus Systems, Inc. | Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer |
US6793796B2 (en) * | 1998-10-26 | 2004-09-21 | Novellus Systems, Inc. | Electroplating process for avoiding defects in metal features of integrated circuit devices |
US20030038035A1 (en) * | 2001-05-30 | 2003-02-27 | Wilson Gregory J. | Methods and systems for controlling current in electrochemical processing of microelectronic workpieces |
JP2001020077A (ja) * | 1999-07-07 | 2001-01-23 | Sony Corp | 無電解めっき方法及び無電解めっき液 |
EP1069210A1 (fr) * | 1999-07-12 | 2001-01-17 | Applied Materials, Inc. | Procédé pour le dépot électrochimique de structures ayant un rapport de forme élevé |
US6355153B1 (en) * | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
KR100659544B1 (ko) * | 1999-11-12 | 2006-12-19 | 에바라 유지라이토 코포레이션 리미티드 | 비아 필링 방법 |
US6491806B1 (en) * | 2000-04-27 | 2002-12-10 | Intel Corporation | Electroplating bath composition |
US20020112964A1 (en) * | 2000-07-12 | 2002-08-22 | Applied Materials, Inc. | Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths |
EP1308541A1 (fr) * | 2001-10-04 | 2003-05-07 | Shipley Company LLC | Bain et procédé pour le dépôt d'une couche metallique sur un substrat |
US6833063B2 (en) * | 2001-12-21 | 2004-12-21 | Nutool, Inc. | Electrochemical edge and bevel cleaning process and system |
US7247223B2 (en) * | 2002-05-29 | 2007-07-24 | Semitool, Inc. | Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces |
-
2003
- 2003-10-16 US US10/688,420 patent/US20050081744A1/en not_active Abandoned
-
2004
- 2004-09-21 TW TW093128537A patent/TW200516176A/zh unknown
- 2004-10-08 EP EP04794546A patent/EP1680535A4/fr not_active Withdrawn
- 2004-10-08 WO PCT/US2004/033229 patent/WO2005040459A2/fr active Application Filing
- 2004-10-08 JP JP2006535564A patent/JP2007508461A/ja active Pending
- 2004-10-08 CN CN200480029839.2A patent/CN1867703A/zh active Pending
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