TW200516176A - Electroplating compositions and methods for electroplating - Google Patents

Electroplating compositions and methods for electroplating

Info

Publication number
TW200516176A
TW200516176A TW093128537A TW93128537A TW200516176A TW 200516176 A TW200516176 A TW 200516176A TW 093128537 A TW093128537 A TW 093128537A TW 93128537 A TW93128537 A TW 93128537A TW 200516176 A TW200516176 A TW 200516176A
Authority
TW
Taiwan
Prior art keywords
electroplating
sulfuric acid
disclosed
methods
copper
Prior art date
Application number
TW093128537A
Other languages
English (en)
Chinese (zh)
Inventor
John L Klocke
Lin-Lin Chen
Original Assignee
Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc filed Critical Semitool Inc
Publication of TW200516176A publication Critical patent/TW200516176A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
TW093128537A 2003-10-16 2004-09-21 Electroplating compositions and methods for electroplating TW200516176A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/688,420 US20050081744A1 (en) 2003-10-16 2003-10-16 Electroplating compositions and methods for electroplating

Publications (1)

Publication Number Publication Date
TW200516176A true TW200516176A (en) 2005-05-16

Family

ID=34521165

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093128537A TW200516176A (en) 2003-10-16 2004-09-21 Electroplating compositions and methods for electroplating

Country Status (6)

Country Link
US (1) US20050081744A1 (fr)
EP (1) EP1680535A4 (fr)
JP (1) JP2007508461A (fr)
CN (1) CN1867703A (fr)
TW (1) TW200516176A (fr)
WO (1) WO2005040459A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI391536B (zh) * 2007-08-10 2013-04-01 羅門哈斯電子材料有限公司 銅電鍍製程
TWI398555B (zh) * 2007-08-10 2013-06-11 羅門哈斯電子材料有限公司 銅電鍍浴配方

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US8852417B2 (en) 1999-04-13 2014-10-07 Applied Materials, Inc. Electrolytic process using anion permeable barrier
US20060157355A1 (en) * 2000-03-21 2006-07-20 Semitool, Inc. Electrolytic process using anion permeable barrier
US8236159B2 (en) 1999-04-13 2012-08-07 Applied Materials Inc. Electrolytic process using cation permeable barrier
US20060189129A1 (en) * 2000-03-21 2006-08-24 Semitool, Inc. Method for applying metal features onto barrier layers using ion permeable barriers
US7628898B2 (en) * 2001-03-12 2009-12-08 Semitool, Inc. Method and system for idle state operation
EP1422320A1 (fr) * 2002-11-21 2004-05-26 Shipley Company, L.L.C. Bain d' électroplacage de cuivre
US7232513B1 (en) * 2004-06-29 2007-06-19 Novellus Systems, Inc. Electroplating bath containing wetting agent for defect reduction
TWI400365B (zh) 2004-11-12 2013-07-01 Enthone 微電子裝置上的銅電沈積
US20070043474A1 (en) * 2005-08-17 2007-02-22 Semitool, Inc. Systems and methods for predicting process characteristics of an electrochemical treatment process
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US8268155B1 (en) * 2009-10-05 2012-09-18 Novellus Systems, Inc. Copper electroplating solutions with halides
TWI397615B (zh) * 2010-04-01 2013-06-01 Zhen Ding Technology Co Ltd 電鍍裝置
EP2518187A1 (fr) * 2011-04-26 2012-10-31 Atotech Deutschland GmbH Bain d'acide aqueux pour le dépôt électrolytique de cuivre
US9416459B2 (en) * 2011-06-06 2016-08-16 United Microelectronics Corp. Electrical chemical plating process
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
US10648096B2 (en) * 2014-12-12 2020-05-12 Infineon Technologies Ag Electrolyte, method of forming a copper layer and method of forming a chip
US9758896B2 (en) * 2015-02-12 2017-09-12 Applied Materials, Inc. Forming cobalt interconnections on a substrate
US10749278B2 (en) * 2016-01-15 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method of electroplating metal into recessed feature and electroplating layer in recessed feature
CN107326407B (zh) * 2017-07-25 2018-11-16 上海新阳半导体材料股份有限公司 整平剂、含其的金属电镀组合物及制备方法、应用
CN107858728B (zh) * 2017-12-20 2019-08-23 武汉新芯集成电路制造有限公司 Tsv电镀方法
TWI741466B (zh) * 2019-12-27 2021-10-01 鉑識科技股份有限公司 利用水/醇溶性有機添加劑製備之奈米雙晶層及其製備方法
US20230167575A1 (en) * 2021-11-30 2023-06-01 Applied Materials, Inc. Electrochemical deposition systems with enhanced crystallization prevention features
CN114214682B (zh) * 2021-12-22 2023-05-30 东莞市金瑞五金股份有限公司 一种工件镀铜的电镀工艺及其电镀设备

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US5252196A (en) * 1991-12-05 1993-10-12 Shipley Company Inc. Copper electroplating solutions and processes
US6413436B1 (en) * 1999-01-27 2002-07-02 Semitool, Inc. Selective treatment of the surface of a microelectronic workpiece
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys
US6024857A (en) * 1997-10-08 2000-02-15 Novellus Systems, Inc. Electroplating additive for filling sub-micron features
WO1999040615A1 (fr) * 1998-02-04 1999-08-12 Semitool, Inc. Procede et appareil de recuit a basse temperature intervenant apres metallisation de microstructures destinees a un dispositif micro-electronique
US6331490B1 (en) * 1998-03-13 2001-12-18 Semitool, Inc. Process for etching thin-film layers of a workpiece used to form microelectric circuits or components
US6565729B2 (en) * 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
TWI223678B (en) * 1998-03-20 2004-11-11 Semitool Inc Process for applying a metal structure to a workpiece, the treated workpiece and a solution for electroplating copper
EP1091024A4 (fr) * 1998-04-30 2006-03-22 Ebara Corp Procede et dispositif de placage d'un substrat
US6228232B1 (en) * 1998-07-09 2001-05-08 Semitool, Inc. Reactor vessel having improved cup anode and conductor assembly
US6074544A (en) * 1998-07-22 2000-06-13 Novellus Systems, Inc. Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
US6793796B2 (en) * 1998-10-26 2004-09-21 Novellus Systems, Inc. Electroplating process for avoiding defects in metal features of integrated circuit devices
US20030038035A1 (en) * 2001-05-30 2003-02-27 Wilson Gregory J. Methods and systems for controlling current in electrochemical processing of microelectronic workpieces
JP2001020077A (ja) * 1999-07-07 2001-01-23 Sony Corp 無電解めっき方法及び無電解めっき液
EP1069210A1 (fr) * 1999-07-12 2001-01-17 Applied Materials, Inc. Procédé pour le dépot électrochimique de structures ayant un rapport de forme élevé
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
KR100659544B1 (ko) * 1999-11-12 2006-12-19 에바라 유지라이토 코포레이션 리미티드 비아 필링 방법
US6491806B1 (en) * 2000-04-27 2002-12-10 Intel Corporation Electroplating bath composition
US20020112964A1 (en) * 2000-07-12 2002-08-22 Applied Materials, Inc. Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths
EP1308541A1 (fr) * 2001-10-04 2003-05-07 Shipley Company LLC Bain et procédé pour le dépôt d'une couche metallique sur un substrat
US6833063B2 (en) * 2001-12-21 2004-12-21 Nutool, Inc. Electrochemical edge and bevel cleaning process and system
US7247223B2 (en) * 2002-05-29 2007-07-24 Semitool, Inc. Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI391536B (zh) * 2007-08-10 2013-04-01 羅門哈斯電子材料有限公司 銅電鍍製程
TWI398555B (zh) * 2007-08-10 2013-06-11 羅門哈斯電子材料有限公司 銅電鍍浴配方

Also Published As

Publication number Publication date
US20050081744A1 (en) 2005-04-21
JP2007508461A (ja) 2007-04-05
WO2005040459A2 (fr) 2005-05-06
EP1680535A4 (fr) 2008-05-07
EP1680535A2 (fr) 2006-07-19
WO2005040459A3 (fr) 2006-01-12
CN1867703A (zh) 2006-11-22

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