JP2007508461A - 電気鍍金組成物及び電気鍍金方法 - Google Patents

電気鍍金組成物及び電気鍍金方法 Download PDF

Info

Publication number
JP2007508461A
JP2007508461A JP2006535564A JP2006535564A JP2007508461A JP 2007508461 A JP2007508461 A JP 2007508461A JP 2006535564 A JP2006535564 A JP 2006535564A JP 2006535564 A JP2006535564 A JP 2006535564A JP 2007508461 A JP2007508461 A JP 2007508461A
Authority
JP
Japan
Prior art keywords
copper
composition
inhibitor
electroplating
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006535564A
Other languages
English (en)
Japanese (ja)
Inventor
クロッケ，ジョン・エル
チェン，リンリン
Original Assignee
セミトゥール・インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by セミトゥール・インコーポレーテッド filed Critical セミトゥール・インコーポレーテッド
Publication of JP2007508461A publication Critical patent/JP2007508461A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
JP2006535564A 2003-10-16 2004-10-08 電気鍍金組成物及び電気鍍金方法 Pending JP2007508461A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/688,420 US20050081744A1 (en) 2003-10-16 2003-10-16 Electroplating compositions and methods for electroplating
PCT/US2004/033229 WO2005040459A2 (fr) 2003-10-16 2004-10-08 Procedes et compositions pour galvanoplastie

Publications (1)

Publication Number Publication Date
JP2007508461A true JP2007508461A (ja) 2007-04-05

Family

ID=34521165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006535564A Pending JP2007508461A (ja) 2003-10-16 2004-10-08 電気鍍金組成物及び電気鍍金方法

Country Status (6)

Country Link
US (1) US20050081744A1 (fr)
EP (1) EP1680535A4 (fr)
JP (1) JP2007508461A (fr)
CN (1) CN1867703A (fr)
TW (1) TW200516176A (fr)
WO (1) WO2005040459A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014513211A (ja) * 2011-04-26 2014-05-29 アトーテヒ ドイッチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング 銅の電解析出用水性酸浴

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8236159B2 (en) * 1999-04-13 2012-08-07 Applied Materials Inc. Electrolytic process using cation permeable barrier
US8852417B2 (en) 1999-04-13 2014-10-07 Applied Materials, Inc. Electrolytic process using anion permeable barrier
US20060157355A1 (en) * 2000-03-21 2006-07-20 Semitool, Inc. Electrolytic process using anion permeable barrier
US20060189129A1 (en) * 2000-03-21 2006-08-24 Semitool, Inc. Method for applying metal features onto barrier layers using ion permeable barriers
US7628898B2 (en) * 2001-03-12 2009-12-08 Semitool, Inc. Method and system for idle state operation
EP1422320A1 (fr) * 2002-11-21 2004-05-26 Shipley Company, L.L.C. Bain d' électroplacage de cuivre
US7232513B1 (en) * 2004-06-29 2007-06-19 Novellus Systems, Inc. Electroplating bath containing wetting agent for defect reduction
TWI400365B (zh) * 2004-11-12 2013-07-01 Enthone 微電子裝置上的銅電沈積
US20070043474A1 (en) * 2005-08-17 2007-02-22 Semitool, Inc. Systems and methods for predicting process characteristics of an electrochemical treatment process
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
JP5442188B2 (ja) * 2007-08-10 2014-03-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 銅めっき液組成物
JP2009041097A (ja) * 2007-08-10 2009-02-26 Rohm & Haas Electronic Materials Llc 銅めっき方法
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US8268155B1 (en) * 2009-10-05 2012-09-18 Novellus Systems, Inc. Copper electroplating solutions with halides
TWI397615B (zh) * 2010-04-01 2013-06-01 Zhen Ding Technology Co Ltd 電鍍裝置
US9416459B2 (en) * 2011-06-06 2016-08-16 United Microelectronics Corp. Electrical chemical plating process
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
US10648096B2 (en) 2014-12-12 2020-05-12 Infineon Technologies Ag Electrolyte, method of forming a copper layer and method of forming a chip
US9758896B2 (en) * 2015-02-12 2017-09-12 Applied Materials, Inc. Forming cobalt interconnections on a substrate
US10749278B2 (en) 2016-01-15 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method of electroplating metal into recessed feature and electroplating layer in recessed feature
CN107326407B (zh) * 2017-07-25 2018-11-16 上海新阳半导体材料股份有限公司 整平剂、含其的金属电镀组合物及制备方法、应用
CN107858728B (zh) * 2017-12-20 2019-08-23 武汉新芯集成电路制造有限公司 Tsv电镀方法
TWI741466B (zh) * 2019-12-27 2021-10-01 鉑識科技股份有限公司 利用水/醇溶性有機添加劑製備之奈米雙晶層及其製備方法
US20230167575A1 (en) * 2021-11-30 2023-06-01 Applied Materials, Inc. Electrochemical deposition systems with enhanced crystallization prevention features
CN114214682B (zh) * 2021-12-22 2023-05-30 东莞市金瑞五金股份有限公司 一种工件镀铜的电镀工艺及其电镀设备

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252196A (en) * 1991-12-05 1993-10-12 Shipley Company Inc. Copper electroplating solutions and processes
US6413436B1 (en) * 1999-01-27 2002-07-02 Semitool, Inc. Selective treatment of the surface of a microelectronic workpiece
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys
US6024857A (en) * 1997-10-08 2000-02-15 Novellus Systems, Inc. Electroplating additive for filling sub-micron features
EP1019954B1 (fr) * 1998-02-04 2013-05-15 Applied Materials, Inc. Procédé et appareil de recuit a basse temperature intervenant après dépot électrolytique de microstructures de cuivre destinées à un dispositif micro-electronique
US6331490B1 (en) * 1998-03-13 2001-12-18 Semitool, Inc. Process for etching thin-film layers of a workpiece used to form microelectric circuits or components
TW593731B (en) * 1998-03-20 2004-06-21 Semitool Inc Apparatus for applying a metal structure to a workpiece
US6565729B2 (en) * 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
EP1091024A4 (fr) * 1998-04-30 2006-03-22 Ebara Corp Procede et dispositif de placage d'un substrat
US6228232B1 (en) * 1998-07-09 2001-05-08 Semitool, Inc. Reactor vessel having improved cup anode and conductor assembly
US6074544A (en) * 1998-07-22 2000-06-13 Novellus Systems, Inc. Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
US6793796B2 (en) * 1998-10-26 2004-09-21 Novellus Systems, Inc. Electroplating process for avoiding defects in metal features of integrated circuit devices
US20030038035A1 (en) * 2001-05-30 2003-02-27 Wilson Gregory J. Methods and systems for controlling current in electrochemical processing of microelectronic workpieces
JP2001020077A (ja) * 1999-07-07 2001-01-23 Sony Corp 無電解めっき方法及び無電解めっき液
EP1069210A1 (fr) * 1999-07-12 2001-01-17 Applied Materials, Inc. Procédé pour le dépot électrochimique de structures ayant un rapport de forme élevé
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
KR100659544B1 (ko) * 1999-11-12 2006-12-19 에바라 유지라이토 코포레이션 리미티드 비아 필링 방법
US6491806B1 (en) * 2000-04-27 2002-12-10 Intel Corporation Electroplating bath composition
US20020112964A1 (en) * 2000-07-12 2002-08-22 Applied Materials, Inc. Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths
US20030066756A1 (en) * 2001-10-04 2003-04-10 Shipley Company, L.L.C. Plating bath and method for depositing a metal layer on a substrate
US6833063B2 (en) * 2001-12-21 2004-12-21 Nutool, Inc. Electrochemical edge and bevel cleaning process and system
US7247223B2 (en) * 2002-05-29 2007-07-24 Semitool, Inc. Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014513211A (ja) * 2011-04-26 2014-05-29 アトーテヒ ドイッチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング 銅の電解析出用水性酸浴

Also Published As

Publication number Publication date
EP1680535A4 (fr) 2008-05-07
EP1680535A2 (fr) 2006-07-19
CN1867703A (zh) 2006-11-22
US20050081744A1 (en) 2005-04-21
WO2005040459A2 (fr) 2005-05-06
TW200516176A (en) 2005-05-16
WO2005040459A3 (fr) 2006-01-12

Similar Documents

Publication Publication Date Title
JP2007508461A (ja) 電気鍍金組成物及び電気鍍金方法
KR102509652B1 (ko) Tsv들 (through silicon vias) 내로 구리의 전착을 위한 니켈 라이너 및 코발트 라이너의 전처리
TWI225901B (en) Copper-plating solution, plating method and plating apparatus
TW584899B (en) Planar metal electroprocessing
CN100378954C (zh) 半导体元件及制造铜导线的方法
KR101105485B1 (ko) 관통전극형 채움 장치 및 방법
KR101807313B1 (ko) 듀얼 스테이트 저해제를 지닌 전해질을 이용한 관통형 실리콘 비아 충진
US20110259750A1 (en) Method of direct plating of copper on a ruthenium alloy
JP2006519503A (ja) 欠陥のない薄い及び平坦なフィルム加工
US20220010446A1 (en) Electrodeposition of nanotwinned copper structures
TW201527607A (zh) 電鍍用鹼前處理
US20230212773A1 (en) Surface pretreatment for electroplating nanotwinned copper
KR20200131909A (ko) 비-구리 라이너 층들 상의 구리 전기충진 (electrofill)
US20130249096A1 (en) Through silicon via filling
JP2001152386A (ja) 高アスペクト比構造のために電気パルス変調を使用する電気化学堆積方法及びシステム
JP4416979B2 (ja) 銅電気メッキに用いるメッキ溶液
US20070170066A1 (en) Method for planarization during plating
US20050199507A1 (en) Chemical structures and compositions of ECP additives to reduce pit defects
US20050109627A1 (en) Methods and chemistry for providing initial conformal electrochemical deposition of copper in sub-micron features
US20220102209A1 (en) Electrodeposition of cobalt tungsten films
US20040118699A1 (en) Homogeneous copper-palladium alloy plating for enhancement of electro-migration resistance in interconnects
JP2003277985A (ja) メッキ成膜方法及びメッキ成膜装置
WO2023204978A1 (fr) Dépôt de cuivre conforme sur une couche de revêtement mince
KR20070031373A (ko) 배리어 금속상에 직접 구리를 도금할 수 있도록 배리어 층표면을 처리하는 방법

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090105

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090127

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090623