WO2005040459A3 - Procedes et compositions pour galvanoplastie - Google Patents

Procedes et compositions pour galvanoplastie Download PDF

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Publication number
WO2005040459A3
WO2005040459A3 PCT/US2004/033229 US2004033229W WO2005040459A3 WO 2005040459 A3 WO2005040459 A3 WO 2005040459A3 US 2004033229 W US2004033229 W US 2004033229W WO 2005040459 A3 WO2005040459 A3 WO 2005040459A3
Authority
WO
WIPO (PCT)
Prior art keywords
electroplating
sulfuric acid
disclosed
methods
copper
Prior art date
Application number
PCT/US2004/033229
Other languages
English (en)
Other versions
WO2005040459B1 (fr
WO2005040459A2 (fr
Inventor
John L Klocke
Linlin Chen
Original Assignee
Semitool Inc
John L Klocke
Linlin Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc, John L Klocke, Linlin Chen filed Critical Semitool Inc
Priority to EP04794546A priority Critical patent/EP1680535A4/fr
Priority to JP2006535564A priority patent/JP2007508461A/ja
Publication of WO2005040459A2 publication Critical patent/WO2005040459A2/fr
Publication of WO2005040459A3 publication Critical patent/WO2005040459A3/fr
Publication of WO2005040459B1 publication Critical patent/WO2005040459B1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

La présente invention concerne des procédés et compositions de galvanoplastie permettant de combler de métallisation des microstructures évidées dans une pièce micro-électronique telle qu'une plaquette de semi-conducteurs. Ces compositions sont généralement un mélange de cuivre et d'acide sulfurique, à raison de 0,3 à 0,5 g de cuivre pour 11 g de litre de solution. On peut également pousser à la limite de saturation la concentration du cuivre dans l'acide sulfurique, c'est-à-dire entre environ 65 et environ 150 g/l. Ces compositions admettent éventuellement les additifs conventionnels tels que les accélérateurs, les suppresseurs, les halogénures et/ou les niveleurs. L'invention concerne ainsi des procédés de dépôt électrochimique de matériaux conducteurs dans des structures telles que des tranchées et/ou des trous de contact réalisés sur des pièces semi-conductrices, et notamment des procédés convenant particulièrement dans les réacteurs à anodes multiples utilisant les solutions de galvanoplastie de l'invention.
PCT/US2004/033229 2003-10-16 2004-10-08 Procedes et compositions pour galvanoplastie WO2005040459A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04794546A EP1680535A4 (fr) 2003-10-16 2004-10-08 Procedes et compositions pour galvanoplastie
JP2006535564A JP2007508461A (ja) 2003-10-16 2004-10-08 電気鍍金組成物及び電気鍍金方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/688,420 US20050081744A1 (en) 2003-10-16 2003-10-16 Electroplating compositions and methods for electroplating
US10/688,420 2003-10-16

Publications (3)

Publication Number Publication Date
WO2005040459A2 WO2005040459A2 (fr) 2005-05-06
WO2005040459A3 true WO2005040459A3 (fr) 2006-01-12
WO2005040459B1 WO2005040459B1 (fr) 2006-03-02

Family

ID=34521165

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/033229 WO2005040459A2 (fr) 2003-10-16 2004-10-08 Procedes et compositions pour galvanoplastie

Country Status (6)

Country Link
US (1) US20050081744A1 (fr)
EP (1) EP1680535A4 (fr)
JP (1) JP2007508461A (fr)
CN (1) CN1867703A (fr)
TW (1) TW200516176A (fr)
WO (1) WO2005040459A2 (fr)

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US20060157355A1 (en) * 2000-03-21 2006-07-20 Semitool, Inc. Electrolytic process using anion permeable barrier
US8852417B2 (en) 1999-04-13 2014-10-07 Applied Materials, Inc. Electrolytic process using anion permeable barrier
US8236159B2 (en) * 1999-04-13 2012-08-07 Applied Materials Inc. Electrolytic process using cation permeable barrier
US20060189129A1 (en) * 2000-03-21 2006-08-24 Semitool, Inc. Method for applying metal features onto barrier layers using ion permeable barriers
US7628898B2 (en) * 2001-03-12 2009-12-08 Semitool, Inc. Method and system for idle state operation
EP1422320A1 (fr) * 2002-11-21 2004-05-26 Shipley Company, L.L.C. Bain d' électroplacage de cuivre
US7232513B1 (en) * 2004-06-29 2007-06-19 Novellus Systems, Inc. Electroplating bath containing wetting agent for defect reduction
TWI400365B (zh) 2004-11-12 2013-07-01 Enthone 微電子裝置上的銅電沈積
US20070043474A1 (en) * 2005-08-17 2007-02-22 Semitool, Inc. Systems and methods for predicting process characteristics of an electrochemical treatment process
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
JP2009041097A (ja) * 2007-08-10 2009-02-26 Rohm & Haas Electronic Materials Llc 銅めっき方法
JP5442188B2 (ja) * 2007-08-10 2014-03-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 銅めっき液組成物
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US8268155B1 (en) * 2009-10-05 2012-09-18 Novellus Systems, Inc. Copper electroplating solutions with halides
TWI397615B (zh) * 2010-04-01 2013-06-01 Zhen Ding Technology Co Ltd 電鍍裝置
EP2518187A1 (fr) * 2011-04-26 2012-10-31 Atotech Deutschland GmbH Bain d'acide aqueux pour le dépôt électrolytique de cuivre
US9416459B2 (en) * 2011-06-06 2016-08-16 United Microelectronics Corp. Electrical chemical plating process
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
US10648096B2 (en) * 2014-12-12 2020-05-12 Infineon Technologies Ag Electrolyte, method of forming a copper layer and method of forming a chip
US9758896B2 (en) * 2015-02-12 2017-09-12 Applied Materials, Inc. Forming cobalt interconnections on a substrate
US10749278B2 (en) 2016-01-15 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method of electroplating metal into recessed feature and electroplating layer in recessed feature
CN107326407B (zh) * 2017-07-25 2018-11-16 上海新阳半导体材料股份有限公司 整平剂、含其的金属电镀组合物及制备方法、应用
CN107858728B (zh) * 2017-12-20 2019-08-23 武汉新芯集成电路制造有限公司 Tsv电镀方法
TWI741466B (zh) * 2019-12-27 2021-10-01 鉑識科技股份有限公司 利用水/醇溶性有機添加劑製備之奈米雙晶層及其製備方法
US20230167575A1 (en) * 2021-11-30 2023-06-01 Applied Materials, Inc. Electrochemical deposition systems with enhanced crystallization prevention features
CN114214682B (zh) * 2021-12-22 2023-05-30 东莞市金瑞五金股份有限公司 一种工件镀铜的电镀工艺及其电镀设备

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Also Published As

Publication number Publication date
TW200516176A (en) 2005-05-16
US20050081744A1 (en) 2005-04-21
EP1680535A2 (fr) 2006-07-19
CN1867703A (zh) 2006-11-22
JP2007508461A (ja) 2007-04-05
EP1680535A4 (fr) 2008-05-07
WO2005040459A2 (fr) 2005-05-06

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