EP1680535A4 - Procedes et compositions pour galvanoplastie - Google Patents

Procedes et compositions pour galvanoplastie

Info

Publication number
EP1680535A4
EP1680535A4 EP04794546A EP04794546A EP1680535A4 EP 1680535 A4 EP1680535 A4 EP 1680535A4 EP 04794546 A EP04794546 A EP 04794546A EP 04794546 A EP04794546 A EP 04794546A EP 1680535 A4 EP1680535 A4 EP 1680535A4
Authority
EP
European Patent Office
Prior art keywords
electroplating
methods
compositions
electroplating compositions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04794546A
Other languages
German (de)
English (en)
Other versions
EP1680535A2 (fr
Inventor
John L Klocke
Linlin Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc filed Critical Semitool Inc
Publication of EP1680535A2 publication Critical patent/EP1680535A2/fr
Publication of EP1680535A4 publication Critical patent/EP1680535A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
EP04794546A 2003-10-16 2004-10-08 Procedes et compositions pour galvanoplastie Withdrawn EP1680535A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/688,420 US20050081744A1 (en) 2003-10-16 2003-10-16 Electroplating compositions and methods for electroplating
PCT/US2004/033229 WO2005040459A2 (fr) 2003-10-16 2004-10-08 Procedes et compositions pour galvanoplastie

Publications (2)

Publication Number Publication Date
EP1680535A2 EP1680535A2 (fr) 2006-07-19
EP1680535A4 true EP1680535A4 (fr) 2008-05-07

Family

ID=34521165

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04794546A Withdrawn EP1680535A4 (fr) 2003-10-16 2004-10-08 Procedes et compositions pour galvanoplastie

Country Status (6)

Country Link
US (1) US20050081744A1 (fr)
EP (1) EP1680535A4 (fr)
JP (1) JP2007508461A (fr)
CN (1) CN1867703A (fr)
TW (1) TW200516176A (fr)
WO (1) WO2005040459A2 (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8236159B2 (en) * 1999-04-13 2012-08-07 Applied Materials Inc. Electrolytic process using cation permeable barrier
US20060157355A1 (en) * 2000-03-21 2006-07-20 Semitool, Inc. Electrolytic process using anion permeable barrier
US8852417B2 (en) 1999-04-13 2014-10-07 Applied Materials, Inc. Electrolytic process using anion permeable barrier
US20060189129A1 (en) * 2000-03-21 2006-08-24 Semitool, Inc. Method for applying metal features onto barrier layers using ion permeable barriers
US7628898B2 (en) * 2001-03-12 2009-12-08 Semitool, Inc. Method and system for idle state operation
EP1422320A1 (fr) * 2002-11-21 2004-05-26 Shipley Company, L.L.C. Bain d' électroplacage de cuivre
US7232513B1 (en) * 2004-06-29 2007-06-19 Novellus Systems, Inc. Electroplating bath containing wetting agent for defect reduction
TW200632147A (fr) * 2004-11-12 2006-09-16
US20070043474A1 (en) * 2005-08-17 2007-02-22 Semitool, Inc. Systems and methods for predicting process characteristics of an electrochemical treatment process
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
JP2009041097A (ja) * 2007-08-10 2009-02-26 Rohm & Haas Electronic Materials Llc 銅めっき方法
JP5442188B2 (ja) * 2007-08-10 2014-03-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 銅めっき液組成物
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US8268155B1 (en) * 2009-10-05 2012-09-18 Novellus Systems, Inc. Copper electroplating solutions with halides
TWI397615B (zh) * 2010-04-01 2013-06-01 Zhen Ding Technology Co Ltd 電鍍裝置
EP2518187A1 (fr) * 2011-04-26 2012-10-31 Atotech Deutschland GmbH Bain d'acide aqueux pour le dépôt électrolytique de cuivre
US9416459B2 (en) * 2011-06-06 2016-08-16 United Microelectronics Corp. Electrical chemical plating process
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
US10648096B2 (en) * 2014-12-12 2020-05-12 Infineon Technologies Ag Electrolyte, method of forming a copper layer and method of forming a chip
US9758896B2 (en) 2015-02-12 2017-09-12 Applied Materials, Inc. Forming cobalt interconnections on a substrate
US10749278B2 (en) 2016-01-15 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method of electroplating metal into recessed feature and electroplating layer in recessed feature
CN107326407B (zh) * 2017-07-25 2018-11-16 上海新阳半导体材料股份有限公司 整平剂、含其的金属电镀组合物及制备方法、应用
CN107858728B (zh) * 2017-12-20 2019-08-23 武汉新芯集成电路制造有限公司 Tsv电镀方法
TWI741466B (zh) * 2019-12-27 2021-10-01 鉑識科技股份有限公司 利用水/醇溶性有機添加劑製備之奈米雙晶層及其製備方法
CN114214682B (zh) * 2021-12-22 2023-05-30 东莞市金瑞五金股份有限公司 一种工件镀铜的电镀工艺及其电镀设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1069210A1 (fr) * 1999-07-12 2001-01-17 Applied Materials, Inc. Procédé pour le dépot électrochimique de structures ayant un rapport de forme élevé
US6518182B1 (en) * 1999-11-12 2003-02-11 Ebara-Udylite Co., Ltd. Via-filling process

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252196A (en) * 1991-12-05 1993-10-12 Shipley Company Inc. Copper electroplating solutions and processes
US6413436B1 (en) * 1999-01-27 2002-07-02 Semitool, Inc. Selective treatment of the surface of a microelectronic workpiece
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys
US6024857A (en) * 1997-10-08 2000-02-15 Novellus Systems, Inc. Electroplating additive for filling sub-micron features
EP1019954B1 (fr) * 1998-02-04 2013-05-15 Applied Materials, Inc. Procédé et appareil de recuit a basse temperature intervenant après dépot électrolytique de microstructures de cuivre destinées à un dispositif micro-electronique
US6331490B1 (en) * 1998-03-13 2001-12-18 Semitool, Inc. Process for etching thin-film layers of a workpiece used to form microelectric circuits or components
US6565729B2 (en) * 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
TW593731B (en) * 1998-03-20 2004-06-21 Semitool Inc Apparatus for applying a metal structure to a workpiece
WO1999057342A1 (fr) * 1998-04-30 1999-11-11 Ebara Corporation Procede et dispositif de placage d'un substrat
US6228232B1 (en) * 1998-07-09 2001-05-08 Semitool, Inc. Reactor vessel having improved cup anode and conductor assembly
US6074544A (en) * 1998-07-22 2000-06-13 Novellus Systems, Inc. Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
US6793796B2 (en) * 1998-10-26 2004-09-21 Novellus Systems, Inc. Electroplating process for avoiding defects in metal features of integrated circuit devices
US20030038035A1 (en) * 2001-05-30 2003-02-27 Wilson Gregory J. Methods and systems for controlling current in electrochemical processing of microelectronic workpieces
JP2001020077A (ja) * 1999-07-07 2001-01-23 Sony Corp 無電解めっき方法及び無電解めっき液
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6491806B1 (en) * 2000-04-27 2002-12-10 Intel Corporation Electroplating bath composition
US20020112964A1 (en) * 2000-07-12 2002-08-22 Applied Materials, Inc. Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths
EP1308541A1 (fr) * 2001-10-04 2003-05-07 Shipley Company LLC Bain et procédé pour le dépôt d'une couche metallique sur un substrat
US6833063B2 (en) * 2001-12-21 2004-12-21 Nutool, Inc. Electrochemical edge and bevel cleaning process and system
US7247223B2 (en) * 2002-05-29 2007-07-24 Semitool, Inc. Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1069210A1 (fr) * 1999-07-12 2001-01-17 Applied Materials, Inc. Procédé pour le dépot électrochimique de structures ayant un rapport de forme élevé
US6518182B1 (en) * 1999-11-12 2003-02-11 Ebara-Udylite Co., Ltd. Via-filling process

Also Published As

Publication number Publication date
WO2005040459A2 (fr) 2005-05-06
CN1867703A (zh) 2006-11-22
EP1680535A2 (fr) 2006-07-19
JP2007508461A (ja) 2007-04-05
TW200516176A (en) 2005-05-16
US20050081744A1 (en) 2005-04-21
WO2005040459A3 (fr) 2006-01-12

Similar Documents

Publication Publication Date Title
EP1680535A4 (fr) Procedes et compositions pour galvanoplastie
AP2089A (en) Compositions and methods for combination antiviraltherapy
EP1633718A4 (fr) Compositions et procedes d'inhibition du facteur de croissance transformant beta (tgf-$g(b))
GB0411940D0 (en) Methods and compositions
EP1701725A4 (fr) Methodes et compositions
AP2280A (en) Compositions and methods for increasing telomeraseactivity.
EP1646382A4 (fr) Composes, compositions et procedes
EP1692112A4 (fr) Composes, compositions, et methodes associees
AU2003256805A8 (en) Compounds compositions and methods
GB0302738D0 (en) Composition
EP1684771A4 (fr) Composition et procede associe
EP1675834A4 (fr) Composes, compositions et methodes
EP1594849A4 (fr) Composes, compositions, et methodes
EP1680420A4 (fr) Composes, compositions et methodes
EP1620092A4 (fr) Composes, compositions et methodes
GB0322033D0 (en) Composition
EP1706111A4 (fr) Composes, compositions et methodes
EP1622878A4 (fr) Composes, compositions et procedes
GB0309317D0 (en) Composition
EP1622883A4 (fr) Composes, compositions, et procedes
GB0306312D0 (en) Composition
GB0330062D0 (en) Compositions and methods
EP1622613A4 (fr) Composes, compositions et procedes
GB0301869D0 (en) Composition
GB0313059D0 (en) Compositions and method

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20060411

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL HR LT LV MK

R17D Deferred search report published (corrected)

Effective date: 20060302

R17D Deferred search report published (corrected)

Effective date: 20060112

R17D Deferred search report published (corrected)

Effective date: 20060302

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20080403

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: APPLIED MATERIALS, INC.

17Q First examination report despatched

Effective date: 20120820

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20130103