EP1680535A4 - Galvanisierzusammensetzungen und galvanisierverfahren - Google Patents
Galvanisierzusammensetzungen und galvanisierverfahrenInfo
- Publication number
- EP1680535A4 EP1680535A4 EP04794546A EP04794546A EP1680535A4 EP 1680535 A4 EP1680535 A4 EP 1680535A4 EP 04794546 A EP04794546 A EP 04794546A EP 04794546 A EP04794546 A EP 04794546A EP 1680535 A4 EP1680535 A4 EP 1680535A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- electroplating
- methods
- compositions
- electroplating compositions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000009713 electroplating Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 239000000203 mixture Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/688,420 US20050081744A1 (en) | 2003-10-16 | 2003-10-16 | Electroplating compositions and methods for electroplating |
PCT/US2004/033229 WO2005040459A2 (en) | 2003-10-16 | 2004-10-08 | Electroplating compositions and methods for electroplating |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1680535A2 EP1680535A2 (de) | 2006-07-19 |
EP1680535A4 true EP1680535A4 (de) | 2008-05-07 |
Family
ID=34521165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04794546A Withdrawn EP1680535A4 (de) | 2003-10-16 | 2004-10-08 | Galvanisierzusammensetzungen und galvanisierverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US20050081744A1 (de) |
EP (1) | EP1680535A4 (de) |
JP (1) | JP2007508461A (de) |
CN (1) | CN1867703A (de) |
TW (1) | TW200516176A (de) |
WO (1) | WO2005040459A2 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060157355A1 (en) * | 2000-03-21 | 2006-07-20 | Semitool, Inc. | Electrolytic process using anion permeable barrier |
US8236159B2 (en) * | 1999-04-13 | 2012-08-07 | Applied Materials Inc. | Electrolytic process using cation permeable barrier |
US8852417B2 (en) | 1999-04-13 | 2014-10-07 | Applied Materials, Inc. | Electrolytic process using anion permeable barrier |
US20060189129A1 (en) * | 2000-03-21 | 2006-08-24 | Semitool, Inc. | Method for applying metal features onto barrier layers using ion permeable barriers |
US7628898B2 (en) * | 2001-03-12 | 2009-12-08 | Semitool, Inc. | Method and system for idle state operation |
EP1422320A1 (de) * | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Kupfer-Elektroplattierungsbad |
US7232513B1 (en) * | 2004-06-29 | 2007-06-19 | Novellus Systems, Inc. | Electroplating bath containing wetting agent for defect reduction |
TW200632147A (de) * | 2004-11-12 | 2006-09-16 | ||
US20070043474A1 (en) * | 2005-08-17 | 2007-02-22 | Semitool, Inc. | Systems and methods for predicting process characteristics of an electrochemical treatment process |
US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
TWI341554B (en) * | 2007-08-02 | 2011-05-01 | Enthone | Copper metallization of through silicon via |
JP2009041097A (ja) * | 2007-08-10 | 2009-02-26 | Rohm & Haas Electronic Materials Llc | 銅めっき方法 |
JP5442188B2 (ja) * | 2007-08-10 | 2014-03-12 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 銅めっき液組成物 |
US7905994B2 (en) * | 2007-10-03 | 2011-03-15 | Moses Lake Industries, Inc. | Substrate holder and electroplating system |
US20090188553A1 (en) * | 2008-01-25 | 2009-07-30 | Emat Technology, Llc | Methods of fabricating solar-cell structures and resulting solar-cell structures |
US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
US8268155B1 (en) * | 2009-10-05 | 2012-09-18 | Novellus Systems, Inc. | Copper electroplating solutions with halides |
TWI397615B (zh) * | 2010-04-01 | 2013-06-01 | Zhen Ding Technology Co Ltd | 電鍍裝置 |
EP2518187A1 (de) * | 2011-04-26 | 2012-10-31 | Atotech Deutschland GmbH | Wässriges Säurebad zur elektrolytischen Ablagerung von Kupfer |
US9416459B2 (en) * | 2011-06-06 | 2016-08-16 | United Microelectronics Corp. | Electrical chemical plating process |
US9768060B2 (en) * | 2014-10-29 | 2017-09-19 | Applied Materials, Inc. | Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD |
US10648096B2 (en) * | 2014-12-12 | 2020-05-12 | Infineon Technologies Ag | Electrolyte, method of forming a copper layer and method of forming a chip |
US9758896B2 (en) * | 2015-02-12 | 2017-09-12 | Applied Materials, Inc. | Forming cobalt interconnections on a substrate |
US10749278B2 (en) * | 2016-01-15 | 2020-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of electroplating metal into recessed feature and electroplating layer in recessed feature |
CN107326407B (zh) * | 2017-07-25 | 2018-11-16 | 上海新阳半导体材料股份有限公司 | 整平剂、含其的金属电镀组合物及制备方法、应用 |
CN107858728B (zh) * | 2017-12-20 | 2019-08-23 | 武汉新芯集成电路制造有限公司 | Tsv电镀方法 |
TWI741466B (zh) * | 2019-12-27 | 2021-10-01 | 鉑識科技股份有限公司 | 利用水/醇溶性有機添加劑製備之奈米雙晶層及其製備方法 |
US20230167575A1 (en) * | 2021-11-30 | 2023-06-01 | Applied Materials, Inc. | Electrochemical deposition systems with enhanced crystallization prevention features |
CN114214682B (zh) * | 2021-12-22 | 2023-05-30 | 东莞市金瑞五金股份有限公司 | 一种工件镀铜的电镀工艺及其电镀设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1069210A1 (de) * | 1999-07-12 | 2001-01-17 | Applied Materials, Inc. | Verfahren zur elektrochemischen Abscheidung von Strukturen mit hohem Aspektverhältnis |
US6518182B1 (en) * | 1999-11-12 | 2003-02-11 | Ebara-Udylite Co., Ltd. | Via-filling process |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252196A (en) * | 1991-12-05 | 1993-10-12 | Shipley Company Inc. | Copper electroplating solutions and processes |
US6413436B1 (en) * | 1999-01-27 | 2002-07-02 | Semitool, Inc. | Selective treatment of the surface of a microelectronic workpiece |
US5972192A (en) * | 1997-07-23 | 1999-10-26 | Advanced Micro Devices, Inc. | Pulse electroplating copper or copper alloys |
US6024857A (en) * | 1997-10-08 | 2000-02-15 | Novellus Systems, Inc. | Electroplating additive for filling sub-micron features |
EP1019954B1 (de) * | 1998-02-04 | 2013-05-15 | Applied Materials, Inc. | Methode und Apparat für die Niedertemperaturbehandlung von elektroplattierten Kupfer-Mikrostrukturen für mikroelektronische Anordnungen |
US6331490B1 (en) * | 1998-03-13 | 2001-12-18 | Semitool, Inc. | Process for etching thin-film layers of a workpiece used to form microelectric circuits or components |
TW593731B (en) * | 1998-03-20 | 2004-06-21 | Semitool Inc | Apparatus for applying a metal structure to a workpiece |
US6565729B2 (en) * | 1998-03-20 | 2003-05-20 | Semitool, Inc. | Method for electrochemically depositing metal on a semiconductor workpiece |
US6517894B1 (en) * | 1998-04-30 | 2003-02-11 | Ebara Corporation | Method for plating a first layer on a substrate and a second layer on the first layer |
US6228232B1 (en) * | 1998-07-09 | 2001-05-08 | Semitool, Inc. | Reactor vessel having improved cup anode and conductor assembly |
US6074544A (en) * | 1998-07-22 | 2000-06-13 | Novellus Systems, Inc. | Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer |
US6793796B2 (en) * | 1998-10-26 | 2004-09-21 | Novellus Systems, Inc. | Electroplating process for avoiding defects in metal features of integrated circuit devices |
US20030038035A1 (en) * | 2001-05-30 | 2003-02-27 | Wilson Gregory J. | Methods and systems for controlling current in electrochemical processing of microelectronic workpieces |
JP2001020077A (ja) * | 1999-07-07 | 2001-01-23 | Sony Corp | 無電解めっき方法及び無電解めっき液 |
US6355153B1 (en) * | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
US6491806B1 (en) * | 2000-04-27 | 2002-12-10 | Intel Corporation | Electroplating bath composition |
US20020112964A1 (en) * | 2000-07-12 | 2002-08-22 | Applied Materials, Inc. | Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths |
EP1308541A1 (de) * | 2001-10-04 | 2003-05-07 | Shipley Company LLC | Beschichtungsbad und Methode zur Abscheidung einer Metallschicht auf einem Substrat |
US6833063B2 (en) * | 2001-12-21 | 2004-12-21 | Nutool, Inc. | Electrochemical edge and bevel cleaning process and system |
US7247223B2 (en) * | 2002-05-29 | 2007-07-24 | Semitool, Inc. | Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces |
-
2003
- 2003-10-16 US US10/688,420 patent/US20050081744A1/en not_active Abandoned
-
2004
- 2004-09-21 TW TW093128537A patent/TW200516176A/zh unknown
- 2004-10-08 JP JP2006535564A patent/JP2007508461A/ja active Pending
- 2004-10-08 EP EP04794546A patent/EP1680535A4/de not_active Withdrawn
- 2004-10-08 CN CN200480029839.2A patent/CN1867703A/zh active Pending
- 2004-10-08 WO PCT/US2004/033229 patent/WO2005040459A2/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1069210A1 (de) * | 1999-07-12 | 2001-01-17 | Applied Materials, Inc. | Verfahren zur elektrochemischen Abscheidung von Strukturen mit hohem Aspektverhältnis |
US6518182B1 (en) * | 1999-11-12 | 2003-02-11 | Ebara-Udylite Co., Ltd. | Via-filling process |
Also Published As
Publication number | Publication date |
---|---|
CN1867703A (zh) | 2006-11-22 |
EP1680535A2 (de) | 2006-07-19 |
TW200516176A (en) | 2005-05-16 |
WO2005040459A2 (en) | 2005-05-06 |
JP2007508461A (ja) | 2007-04-05 |
US20050081744A1 (en) | 2005-04-21 |
WO2005040459A3 (en) | 2006-01-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20060411 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL HR LT LV MK |
|
R17D | Deferred search report published (corrected) |
Effective date: 20060302 |
|
R17D | Deferred search report published (corrected) |
Effective date: 20060112 |
|
R17D | Deferred search report published (corrected) |
Effective date: 20060302 |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20080403 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: APPLIED MATERIALS, INC. |
|
17Q | First examination report despatched |
Effective date: 20120820 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20130103 |