WO2005038896A1 - Methode de gravure au plasma - Google Patents

Methode de gravure au plasma Download PDF

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Publication number
WO2005038896A1
WO2005038896A1 PCT/JP2004/015256 JP2004015256W WO2005038896A1 WO 2005038896 A1 WO2005038896 A1 WO 2005038896A1 JP 2004015256 W JP2004015256 W JP 2004015256W WO 2005038896 A1 WO2005038896 A1 WO 2005038896A1
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Prior art keywords
film
etching
gas
plasma
hard mask
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PCT/JP2004/015256
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English (en)
Japanese (ja)
Inventor
Tetsuya Nishizuka
Toshihisa Nozawa
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Tokyo Electron Limited
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Publication of WO2005038896A1 publication Critical patent/WO2005038896A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Definitions

  • the present invention relates to a method for etching a fluorine-added carbon film formed on a substrate for manufacturing a semiconductor device by plasma.
  • the n-th wiring layer and the (n + 1) -th wiring layer are connected by a conductive layer, and a thin film called an interlayer insulating film is formed in a region other than the conductive layer.
  • a typical example of the interlayer insulating film is an SiO film.
  • fluorine-added carbon film which is a compound of carbon (C) and fluorine (F)
  • fluorine-added carbon film which is a compound of carbon (C) and fluorine (F)
  • the relative dielectric constant of the fluorinated carbon film is less than or equal to 2.5 if the type of source gas is selected. Therefore, the fluorine-added carbon film is an extremely effective film as an interlayer insulating film.
  • the selection of source gases is progressing, and the prospect that high quality films can be obtained by CVD equipment that generates plasma with high density and low electron temperature is emerging. Therefore, practical use of a fluorine-added carbon film as a low dielectric constant insulating film is expected.
  • An object of the present invention is to provide a plasma etching method which can perform favorable etching on a fluorinated carocarbon film and does not damage other films formed after the etching.
  • the present invention provides a method for generating a plasma of a processing gas containing a CF gas (x and y are natural numbers).
  • the fluorine-added carbon film can be etched in a good shape, and since hydrogen is not used as a processing gas, the etching does not allow hydrogen to enter the surface portion. There is no risk of damaging the film formed in the process.
  • the CF gas is, for example, a CF gas, a CF gas, a CF gas, a CF gas, a CFy 4 2 6 4 6 3 8 4 8 gas, or the like.
  • the processing gas containing the C F gas (x and y are natural numbers) is a rare gas added to the processing gas.
  • the present invention also provides a method of etching a substrate on which a fluorine-added carbon film, a hard mask film, and a resist film formed in a desired pattern are laminated in this order, wherein the pattern of the resist film is A hard mask removing step of etching and removing an exposed portion of the node mask film exposed based on the above, and after the hard mask removing step, adding fluorine below the node mask film removed by the hard mask removing step.
  • the carbon film is etched by a plasma of a processing gas containing CF gas (x and y are natural numbers).
  • the fluorine-added carbon film can be etched in a good shape, and since hydrogen is not used as a processing gas, the etching prevents hydrogen from entering the surface portion. There is no risk of damaging the film formed in the process.
  • a plasma of a processing gas containing a CF gas (x and y are natural numbers) may be used.
  • the hard mask removing step includes: a first step of partially removing the exposed portion of the hard mask film; and completely removing the exposed portion of the node mask film partially removed in the first step.
  • a resist film removing step of etching the resist film is performed between the first step and the second step.
  • a plasma containing an active species of oxygen is used.
  • the present invention provides a method for etching a substrate on which a base film, a fluorine-added carbon film, a hard mask film, and a resist film formed in a desired pattern are laminated in this order,
  • the fluorine-added carbon film can be etched in a good shape, and since hydrogen is not used as a processing gas, the etching is performed so that hydrogen does not enter the surface. There is no risk of damaging the film formed in the process.
  • the fluorine-added carbon film is formed at the time of etching the resist film (at the time of ashing). The etching of the side wall of the film can be suppressed.
  • the main etching step is performed by a plasma of a processing gas containing a CF gas (x and y are natural numbers) and a rare gas.
  • FIG. 1 is a vertical sectional side view showing an example of a plasma processing apparatus used in an embodiment of the present invention.
  • FIG. 2 is a plan view showing a gas supply unit of the plasma processing apparatus of FIG. 1.
  • FIG. 3 is a perspective view showing an antenna section of the plasma processing apparatus of FIG. 1 in a partial cross section.
  • FIG. 4 is an explanatory view showing a state in which a fluorine-added carbon film is etched according to an embodiment of the present invention.
  • FIG. 5 is an explanatory view showing a state in which a fluorine-added carbon film is etched according to another embodiment of the present invention.
  • FIG. 6 is an explanatory diagram showing a plasma electron density distribution in the plasma processing apparatus of FIG. 1.
  • FIG. 7 is an explanatory diagram showing an XPS analysis result of the surface portion of the fluorine-added carbon film.
  • FIG. 8 shows the RBS of the fluorinated carbon film plasma-treated using HZN gas.
  • FIG. 9 is an explanatory diagram showing an analysis result.
  • FIG. 9 shows the dilution ratio of CF gas with Ar gas and the etching rate of fluorine-added carbon film.
  • FIG. 4 is an explanatory diagram showing the relationship with the following.
  • FIG. 10 is an explanatory diagram showing a map of an etching rate of a fluorine-added carbon film.
  • FIG. 11 is an explanatory diagram showing a map of an etching rate of a SiCN film as a hard mask.
  • FIG. 12 is an explanatory diagram showing a map of a selectivity of a fluorine-added carbon film ZSiCN film.
  • FIG. 13 is an explanatory diagram showing the relationship between the temperature of the mounting table and the selectivity of the fluorine-added carbon film ZSiCN film.
  • FIG. 14 is an explanatory diagram showing the relationship between the temperature of the mounting table and the inclination of the side wall of the fluorinated carbon film.
  • FIG. 15 is an explanatory view showing observation results of a concave portion obtained by etching a fluorine-added carbon film by the method of the present invention.
  • reference numeral 1 denotes a processing container (vacuum chamber) that also has, for example, aluminum power.
  • a mounting table 2 is provided in the processing container 1.
  • An electrostatic chuck 21 is provided on the surface of the mounting table 2.
  • the electrodes of the electrostatic chuck 21 are connected to a DC power supply 23 via a switch 22.
  • a flow path 24 of a temperature control medium as a temperature control means is provided inside the mounting table 2.
  • the refrigerant which is a temperature control medium, is discharged from the outflow passage 26 through the inflow passage 24 as well as the inflow passage 25.
  • the semiconductor wafer (hereinafter, referred to as a wafer) W as a substrate on the mounting table 2 is maintained at a predetermined temperature.
  • the mounting table 2 is connected to a high frequency power supply 27 for biasing at 13.56 MHz, for example.
  • a gas supply unit 3 formed of, for example, a substantially disk shape and serving as a conductor is provided above the mounting table 2.
  • a large number of gas supply holes 31 are formed on the surface of the gas supply unit 3 facing the mounting table 2.
  • a lattice-shaped gas flow path 32 communicating with the gas supply hole 31 is formed inside the gas supply unit 3, for example, as shown in FIG. 2, a lattice-shaped gas flow path 32 communicating with the gas supply hole 31 is formed.
  • the gas flow path 32 is connected to a gas supply path 33.
  • a gas supply source (not shown) is connected to the gas supply path 33, and a CF gas (x, y is a natural number) such as CF gas is supplied from each gas supply source.
  • the gas is supplied into the processing vessel 1 through the gas supply path 33 and the gas supply hole 31.
  • the gas supply unit 3 has a number of openings 34 penetrating the gas supply unit 3 in the up-down direction.
  • the openings 34 are formed between adjacent gas channels 32, for example, as shown in FIG. 2, in order to allow the plasma to pass through the space below the gas supply unit 3.
  • An exhaust pipe 11 is connected to the bottom of the processing container 1.
  • a vacuum exhaust unit (not shown) is connected to the base end of the exhaust pipe 11. Further, inside the inner wall of the processing container 1, a surrounding member (wall portion) 13 in which a heater 12 as a heating means is built is provided.
  • a plate (microwave transmitting window) 4 that also has a dielectric material, for example, a quartz force is provided on the upper side of the quartz plate 4 so as to be in close contact with the quartz plate 4.
  • the dielectric plate is not limited to quartz, for example, Lumina or the like may be used.
  • the antenna section 5 has a flat antenna body 50 having a circular lower surface side and an opening, and a disk-shaped planar antenna member (a plurality of slots formed on the lower surface side of the antenna body 50). Slot plate) 51.
  • the antenna body 50 and the planar antenna member 51 are made of a conductor, form a flat hollow circular waveguide, and are connected to the coaxial waveguide 41.
  • the antenna main body 50 is divided into two members in this example, and a refrigerant reservoir 52 through which the refrigerant flows through a refrigerant passage having an external force (not shown) is formed therein.
  • a retardation plate 53 made of a low-loss dielectric material such as alumina, silicon oxide, silicon nitride or the like. .
  • the retardation plate 53 shortens the wavelength of the microwave described later to shorten the guide wavelength in the circular waveguide.
  • a radial line slot antenna (RLSA) is constituted by the antenna body 50, the planar antenna member 51, and the retardation plate 53! RU
  • the antenna unit 5 configured as described above is mounted on the processing container 1 via a sealing member (not shown) such that the planar antenna member 51 comes into close contact with the quartz plate 4.
  • the antenna section 5 is connected to an external microwave generation means 42 via a coaxial waveguide 41, so that a microwave having a frequency of, for example, 2.45 GHz or 8.4 GHz is supplied.
  • the outer waveguide 41A constituting the coaxial waveguide 41 is connected to the antenna main body 50, and the center conductor 41B is connected to the planar antenna member 51 via the opening formed in the retardation plate 53. I have.
  • the flat antenna member 51 is made of, for example, a copper plate having a thickness of about 0.3 to 1 mm.
  • the planar antenna member 51 has a large number of slots 54 for generating, for example, circularly polarized waves. More specifically, a plurality of pairs of slots 54a, 54b arranged slightly apart in a substantially T-shape, for example, concentrically or spirally along the circumferential direction around the center of the planar antenna member 51. Is formed. Note that the pair of slots may be arranged slightly apart in an approximately octagonal shape. Since the slots 54a and 54b are arranged so as to be substantially orthogonal to each other, circularly polarized waves including two orthogonally polarized components are emitted. If the slot pairs 54a and 54b are arranged at intervals corresponding to the wavelength of the microwave compressed by the retardation plate 53, the microwave is substantially planar from the planar antenna member 51. Radiated as waves.
  • the slot length of each of the slots 54a and 54b is 1Z2 or less of the microwave wavelength on the coaxial waveguide 41 side of the planar antenna member 51, and The dimension is set to be larger than 1/2 of the wavelength of the microwave on the plasma generation space (inside the processing vessel 2) of the surface antenna member 51.
  • the microwave does not return to the coaxial waveguide 41 after entering the plasma space through the slot 54.
  • the slot may be formed so that the microphone mouth wave is radiated not in circular polarization but in linear polarization.
  • a wafer W which is a substrate for manufacturing semiconductor devices, has a SiCN force on a fluorine-added carbon film (CF film) 61 to be etched.
  • a hard mask 62 is laminated, and a resist film (resist pattern) 63 for forming a pattern is further formed thereon.
  • a fluorine-added carbon film 65 is formed under the fluorine-added carbon film 61 via a hard mask 64 made of SiCN.
  • the fluorine additive films 65 and 61 correspond to the n-th and n + 1-th interlayer insulating films, respectively.
  • Each of the fluorine-added carbon films 65 and 61 and the hard masks 62 and 64 is formed by CVD using plasma generated by microwaves.
  • the thickness of the fluorine-added carbon films 65 and 61 is, for example, 500 ⁇ 500, and the thickness of the hard masks 62, 64 is, for example, 1000A.
  • the wafer W is loaded into the processing container 1 from a load lock chamber (not shown) through a transfer port (not shown), and is placed on the mounting table 2. Subsequently, while the CF gas and the Ar gas are supplied at predetermined flow rates from the gas supply unit 3, the inside of the processing vessel 1 is evacuated.
  • a high frequency (microwave) of, for example, 2.45 GHz and 1500 W is supplied from the microwave generation means 42, and a high frequency power for bias of, for example, 13.56 MHz and 1250 W is supplied to the mounting table 2 from the high frequency power supply unit 27.
  • the microwave propagates in the coaxial waveguide 41 in the TM mode, the TE mode, or the TEM mode, and reaches the planar antenna member 51 of the antenna unit 5. Then, while the central force of the planar antenna member 51 is also propagated radially toward the peripheral region, the microwaves are emitted from the pair of slots 54a and 54b through the quartz plate 4 toward the lower processing space. Is done. At this time, due to the arrangement of the pair of slots 54a and 54b as described above, the circularly polarized wave is uniformly emitted over the plane of the planar antenna member 51, and the electric field density in the space below this is made uniform. Is done. On the other hand, the CF gas and Ar gas supplied into the processing vessel 1 from the gas supply unit 3
  • the gas flows upward through the opening 34 (see FIG. 2) of the gas supply unit 3 and is turned into plasma by the microwave energy.
  • This plasma flows into the processing space below the gas supply unit 3 through the opening 34.
  • the exposed hard mask 62 is etched by the active species in the plasma. Specifically, as can be inferred from the experimental examples described later, the CF compound adheres to the surface of the hard mask 62, and the hard mask 62 is removed together with this compound.
  • the thickness of the node mask 62 becomes about ⁇ of the original thickness.
  • the process is stopped. Then, the process is switched to the etching (assisting) process of the resist film 63.
  • Ar gas, O gas and N gas are supplied from the gas supply unit 3 into the processing vessel 1.
  • microwaves are emitted from the planar antenna member 51, and a high-frequency bias is supplied to the mounting table 2.
  • the gas mixture is converted into plasma by the energy of microwaves, and the resist film 63 is ashed (ashed) by oxygen radicals, which are active oxygen species in the plasma, and removed (FIG. 4 (c)). )).
  • the gas supply and the power supply are stopped, and the process is stopped. Then, the process is switched to the etching process of the fluorine-added carbon film 61.
  • This etching process is performed under the same conditions as the etching process of the hard mask 62 described above. In this etching, active species of F and active species of CF are generated in the plasma, and these active species react with the fluorinated carbon film 61, as estimated from an experimental example described later, and the film is formed of CF or CF. It is removed as volatile gas such as CF.
  • the bon film 61 is etched, exposing the underlying hard mask 64 as shown in FIG.
  • a favorable etching shape of the fluorine-added carbon film 61 that is, an etching shape with high perpendicularity can be obtained.
  • use CF gas for example CF gas, and do not use hydrogen gas.
  • Hydrogen does not enter the side wall surface of the concave portion of the fluorine-added carbon film formed by the etching due to the etching. For this reason, it is possible to obtain the expected electrical characteristics without damaging the barrier metal film formed in the concave portion in the next step and the metal film embedded in the concave portion.
  • the ratio (selectivity) of the etching rate of the fluorine-added carbon film 61 to the etching rate of the SiCN film 62 as a hard mask can be increased. Therefore, it is possible to employ a method of etching the resist film 63 while leaving the exposed hard mask 62 thin without etching it, and thereafter etching the remaining hard mask 62 and the fluorine-added carbon film 61. In this case, when etching the resist film 63, the plasma of oxygen gas is not irradiated to the fluorinated carocarbon film 61. Therefore, the undercut (expansion of the side wall swelling and etching) does not occur, and a favorable etching shape with high perpendicularity can be obtained.
  • the circularly polarized wave is uniformly emitted over the plane of the planar antenna member 51, and the electric field density in the processing space below this is made uniform.
  • the energy excites high-density and uniform plasma over the entire processing space. Therefore, uniform processing can be performed at a high etching rate.
  • FIG. 5 (a) a wafer having the same surface structure as that used in the previous embodiment (FIG. 5 (a)) is used, and etching is performed by converting CF gas and Ar gas into plasma.
  • the etching of the mask 62 is not stopped, but is completely etched (FIG. 5B), and the fluorine-added carbon film 61 is continuously etched and removed (FIG. 5C). Then, a plasma containing active species of oxygen is generated (for example, Ar gas, N gas and O gas).
  • a plasma containing active species of oxygen for example, Ar gas, N gas and O gas.
  • a bias power of, for example, about 500 W to 1000 W is applied to the mounting table 2 to etch the resist film 63.
  • the resist film 63 is removed by etching (assisting) with an active species of oxygen.
  • Ar ions sputter the hard mask 64 which is a base film of the fluorinated carbon film 61, and the sputter adheres to the side wall of the concave portion of the fluorinated carbon film 61.
  • the attached spatter serves as a so-called protective film. This allows the oxygen radio The action of the cull to etch the side wall is suppressed, and the recess can be maintained in a good shape without becoming an undercut shape.
  • another rare gas may be added instead of Ar gas.
  • the CF gas used in the present invention is not limited to CF gas
  • F gas, CF gas, CF gas and CF gas can be used. Also, c
  • SiCN film not only SiCN film but also SiO mask, SiOF film, SiCO film, SiCOH film
  • an insulating film such as a SiN film may be used.
  • These insulating films are made of CF
  • the hard mask may be a conductive film such as TiN or TiW instead of the insulating film.
  • a gas for etching the hard mask for example, BC1 gas can be used.
  • the step of etching and removing the resist film 63 is preferably performed in a state where the hard mask 62 remains. Alternatively, it may be performed after the hard mask 62 and the fluorine-added carbon film 61 are removed by etching.
  • the rare gas used when etching the fluorine-added carbon film 61 is not limited to Ar gas, but may be Xe gas or Kr gas!
  • Ar gas was supplied into the processing vessel 1 of the plasma processing apparatus shown in Fig. 1, the pressure was set to 6.7 Pa, 67 Pa, and 133 Pa, the microwave power was set to 2000 W, and 60 mm below the quartz plate 4 was set. Electron density was measured at the position using a Langmuir probe. The results are as shown in FIG. Note that zero on the horizontal axis corresponds to the center position on the mounting table 2. As can be seen from the result, the electron density is about 1 ⁇ 10 12 (pieces / cm 3 ), which is about 10 times as large as that of the parallel plate type plasma apparatus. The electron temperature was 1.5 eV at the same position. Therefore, it is understood that high-density plasma with a low electron temperature was obtained.
  • a substrate (Ueno) with a fluorine-added carbon film formed on the entire surface other than the wafer shown in Fig. 4 was used. That is, this substrate was carried into the above-described plasma processing apparatus, and two types of plasmas of the processing gas were respectively generated to etch the fluorine-added carbon film.
  • the two types of processing gases are H gas ZN gas set at a flow rate of 200Z20 Osccm and Ar gas set at a flow rate of 400Zl00sccm.
  • the microwave power was set to 2000W and the pressure was 1.
  • the pressure was set to 33 Pa (10 mTorr), and the plasma irradiation time was 30 seconds.
  • the accelerated ions do not collide with the side walls of the recess formed by the actual etching. In order to model this side wall, etching was performed without applying a high frequency bias to the mounting table 2.
  • Irradiation increases the concentration of H atoms by about 2.5 times at a depth of about 1000A from the outermost surface.
  • N (nitrogen) atoms were only observed on the outermost surface and had not penetrated into the fluorine-added carbon film.
  • hydrogen easily penetrates and diffuses into the film due to its small atomic radius. As described above, hydrogen only penetrates deep into the fluorine-added carbon film simply by irradiating it with hydrogen plasma. It was found that the film composition was changed.
  • the profile of the CF bonding state on the surface has hardly changed. Therefore, the film formed after the etching is not likely to be damaged by hydrogen.
  • the microwave power and the bias power were 1500 W and 1250 W, respectively, the pressure was 1.33 Pa, and the wafer temperature was 0 ° C.
  • etching species such as F and CF are generated in the plasma to accelerate the etching of the fluorine-added carbon film. That is, the film surface becomes volatile gas such as CF or CF.
  • the etching speed is constant.
  • the result shown in FIG. 11 was obtained. It can be seen that, unlike the etching rate of the fluorine-added carbon film, the etching rate of the SiCN film does not depend so much on the plasma density but largely depends on the bias power. From this result, it can be said that the etching of the SiCN film is governed by the energy of ion sputtering rather than the ion density.
  • FIG. 12 shows the results of connecting the groups of the selectivity ratios (the etching rate of the fluorine-added carbon film and the etching rate of the ZSiCN film) from which the relational forces of FIGS. It is a map. From these results, it was concluded that microwave power, that is, high-density plasma was required to perform high-speed etching of the fluorine-added carbon film and to obtain a high selectivity, and that bias power was hardly involved. . Therefore, it is understood that the plasma processing apparatus shown in FIG. 1 is effective as an apparatus for etching a fluorine-added carbon film.
  • the microwave power and bias power were set to 1500 W and 1250 W, respectively, the pressure was set to 1.33 Pa, and the flow force of Ar gas ZCF gas was set to OOZlOOsccm.
  • the CF film is deposited on the surface of the SiCN film, and the SiCN film is peeled off together with the deposit.
  • the microwave power and bias power were set to 1500 W and 1250 W, respectively, the pressure was set to 1.33 Pa, and the flow force of Ar gas ZCF gas was set to OOZlOOsccm.
  • Example F-1 the temperature of the wafer is set to 40 ° C., first, the SiCN film which is a hard mask formed on the fluorinated carbon film is etched and removed, and then the fluorinated carbon film is formed in the next step. Etched.
  • the thicknesses of the fluorine-added carbon film and the node mask were 5000 A and 1000 A, respectively. This process is referred to as Example F-1.
  • CF gas instead of CF gas, CF gas is used, and further, Ar gas and O gas are used.
  • Ar gas ZC F gas ZO gas flow rate is set to 1000Zl5Zl0sccm and
  • Example F-2 The etching was performed in the same manner as in Example F-1, except that the pressure was set to 2.66 Pa. This process is referred to as Example F-2.
  • N gas was used instead of O gas, and the other conditions were the same as in Example F-2.
  • Example F-3 Was done. This process is referred to as Example F-3.
  • Example F-1 The cross section of the concave portion obtained in Example F-1 was confirmed by SEM (scanning electron microscope), and had a shape as shown in Fig. 15, and the angle ⁇ of the side wall was 87 degrees. High verticality was obtained. Further, the same results were obtained for Example F-2 and Example F-3.
  • the etching rate (etching rate) and selectivity in each example were as follows. The unit of the etching rate is AZ.
  • the pressure is set at 2.66 Pa
  • the microwave power and bias power are set at 1500 W and 500 W, respectively
  • the wafer temperature is set at S40 ° C
  • the resist film is set.

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Abstract

L'invention concerne une méthode de gravure au plasma caractérisée en ce qu'elle comprend une étape permettant de générer un plasma d'un gaz de traitement contenant un gaz CxFy (x et y désignent des nombres entiers naturels) et une autre étape consistant à graver un film en carbone fluoré précédemment formé sur un substrat, au moyen du plasma.
PCT/JP2004/015256 2003-10-16 2004-10-15 Methode de gravure au plasma WO2005038896A1 (fr)

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JP2003-356880 2003-10-16
JP2003356880A JP2005123406A (ja) 2003-10-16 2003-10-16 プラズマエッチング方法。

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KR101094953B1 (ko) 2005-06-02 2011-12-15 주식회사 하이닉스반도체 반도체 소자의 미세패턴 형성방법
KR101179111B1 (ko) * 2007-02-09 2012-09-07 도쿄엘렉트론가부시키가이샤 에칭 방법 및 기억 매체
JP4919871B2 (ja) 2007-02-09 2012-04-18 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法および記憶媒体
JP5369733B2 (ja) * 2008-02-27 2013-12-18 東京エレクトロン株式会社 プラズマ処理装置

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