JP5925898B2 - フルオロカーボン用の金属カーバイドバリア層を形成する方法 - Google Patents
フルオロカーボン用の金属カーバイドバリア層を形成する方法 Download PDFInfo
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Description
Claims (20)
- 半導体デバイス内においてフルオロカーボン膜用の金属カーバイドバリア層を形成する方法であって:
基板上にフルオロカーボン膜を堆積する工程;
第1温度で前記フルオロカーボン膜上に金属含有層を堆積する工程であって、前記金属含有層が前記フルオロカーボン膜と反応することで、前記金属含有層と前記フルオロカーボン膜との間の界面に金属フッ化物層が形成される、工程;
前記第1温度よりも高い第2温度で前記金属含有層を熱処理する工程;
を有し、
前記金属含有層を熱処理する工程は、前記金属含有層を介する拡散によって前記金属フッ化物層からフッ素を除去し、かつ、前記金属含有層と前記フルオロカーボン膜との間の界面に金属カーバイド層のバリア層を形成し、
前記金属含有層は、ブリスタリング又は剥離を起こすことなく前記第2温度での前記熱処理工程に耐える、
方法。 - 前記金属含有層が、金属窒化物、金属酸化物、金属カーバイド、若しくは金属元素の状態を含み、又は、金属窒化物、金属酸化物、金属カーバイド、若しくは金属元素の状態から構成される、請求項1に記載の方法。
- 前記金属含有層が、タンタル(Ta)、チタン(Ti)、タングステン(W)、コバルト(Co)、若しくはマンガン(Mn)、又はこれらの組み合わせを含む、請求項2に記載の方法。
- 前記第1温度が-30℃乃至300℃で、かつ、
前記第2温度が300℃よりも高温である、
請求項1に記載の方法。 - 前記金属含有層が物理気相成長法によって堆積される、請求項1に記載の方法。
- 前記フルオロカーボン膜が、フッ素と炭素を含む処理気体から生成されるプラズマを用いることによって堆積される、請求項1に記載の方法。
- フッ素と炭素を含む前記処理気体が、C4F4、C4F6、C6F6、若しくはC5F8、又はこれら2つ以上の組み合わせを含む、請求項5に記載の方法。
- 前記プラズマが、ラジアルスロットアンテナ(RLSA)を含むマイクロ波プラズマ源を用いることによって生成される、請求項6に記載の方法。
- 前記金属含有層の熱処理後に前記金属含有層を除去する工程をさらに有する、請求項1に記載の方法。
- 前記金属含有層を除去する工程が、前記金属含有層の乾式エッチング又は湿式エッチングを含む、請求項9に記載の方法。
- 前記金属含有層の除去後に第3温度で前記フルオロカーボン膜上に追加の金属含有層を堆積する工程であって、前記追加の金属含有層は、該追加の金属含有層と前記フルオロカーボン膜との間の界面で追加の金属フッ化物層を形成する、工程;
前記第3温度よりも高い第4温度で前記追加の金属含有層を熱処理する工程であって、前記追加の金属含有層を熱処理する工程は、前記追加の金属含有層を介する拡散によって前記追加の金属フッ化物層からフッ素を除去し、かつ、前記追加の金属含有層と前記フルオロカーボン膜との間の界面で追加の金属カーバイドバリア層を形成する、工程;
をさらに有する、請求項9に記載の方法。 - 前記追加の金属含有層が、金属窒化物、金属酸化物、金属酸窒化物、金属カーバイド、若しくは金属元素の状態を含み、又は、金属窒化物、金属酸化物、金属酸窒化物、金属カーバイド、若しくは金属元素の状態から構成される、請求項11に記載の方法。
- 前記追加の金属含有層が、タンタル(Ta)、チタン(Ti)、タングステン(W)、コバルト(Co)、若しくはマンガン(Mn)、又はこれらの組み合わせを含む、請求項11に記載の方法。
- 前記第3温度が-30℃乃至300℃で、かつ、
前記第4温度が300℃よりも高温である、
請求項11に記載の方法。 - 前記第4温度での前記追加の金属含有層の熱処理後に前記追加の金属含有層を除去する工程をさらに有する、請求項11に記載の方法。
- 前記追加の金属含有層を除去する工程が、前記追加の金属含有層の乾式エッチング又は湿式エッチングを含む、請求項15に記載の方法。
- 前記金属含有層の熱処理後に前記金属含有層上にCu金属を堆積する工程をさらに有する、請求項1に記載の方法。
- 前記金属含有層の除去後に前記金属カーバイドバリア層上にCu金属を堆積する工程をさらに有する、請求項9に記載の方法。
- 前記の熱処理された追加の金属含有層上にCu金属を堆積する工程をさらに有する、請求項11に記載の方法。
- 前記追加の金属含有層の除去後に前記金属カーバイドバリア層上にCu金属を堆積する工程をさらに有する、請求項15に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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US13/244,371 US8691709B2 (en) | 2011-09-24 | 2011-09-24 | Method of forming metal carbide barrier layers for fluorocarbon films |
US13/244,371 | 2011-09-24 | ||
PCT/US2012/055608 WO2013043512A1 (en) | 2011-09-24 | 2012-09-14 | Method of forming metal carbide barrier layers for fluorocarbon films |
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JP5925898B2 true JP5925898B2 (ja) | 2016-05-25 |
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US (1) | US8691709B2 (ja) |
JP (1) | JP5925898B2 (ja) |
KR (1) | KR20140063870A (ja) |
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US5324813A (en) | 1992-07-22 | 1994-06-28 | International Business Machines Corporation | Low dielectric constant fluorinated polymers and methods of fabrication thereof |
EP1052694A4 (en) | 1998-01-10 | 2004-11-24 | Tokyo Electron Ltd | SEMICONDUCTOR DEVICE HAVING AN INSULATING LAYER CONSISTING OF A FLUORINATED CARBON FILM AND METHOD FOR PRODUCING SAID DEVICE |
US6448655B1 (en) | 1998-04-28 | 2002-09-10 | International Business Machines Corporation | Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation |
US6265779B1 (en) | 1998-08-11 | 2001-07-24 | International Business Machines Corporation | Method and material for integration of fuorine-containing low-k dielectrics |
US6818990B2 (en) | 2000-04-03 | 2004-11-16 | Rensselaer Polytechnic Institute | Fluorine diffusion barriers for fluorinated dielectrics in integrated circuits |
US6846737B1 (en) | 2000-08-15 | 2005-01-25 | Intel Corporation | Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materials |
US7049209B1 (en) | 2005-04-01 | 2006-05-23 | International Business Machines Corporation | De-fluorination of wafer surface and related structure |
JP5194393B2 (ja) | 2006-06-23 | 2013-05-08 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP5366235B2 (ja) * | 2008-01-28 | 2013-12-11 | 東京エレクトロン株式会社 | 半導体装置の製造方法、半導体製造装置及び記憶媒体 |
TW201044462A (en) | 2009-01-22 | 2010-12-16 | Tokyo Electron Ltd | A method for manufacturing semiconductor devices |
US20110081503A1 (en) | 2009-10-06 | 2011-04-07 | Tokyo Electron Limited | Method of depositing stable and adhesive interface between fluorine-based low-k material and metal barrier layer |
US20110081500A1 (en) | 2009-10-06 | 2011-04-07 | Tokyo Electron Limited | Method of providing stable and adhesive interface between fluorine-based low-k material and metal barrier layer |
WO2011044053A1 (en) * | 2009-10-06 | 2011-04-14 | Tokyo Electron Limited | Method of providing stable and adhesive interface between fluorine-based low-k material and metal barrier layer |
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2012
- 2012-09-14 KR KR1020147010678A patent/KR20140063870A/ko not_active Application Discontinuation
- 2012-09-14 WO PCT/US2012/055608 patent/WO2013043512A1/en active Application Filing
- 2012-09-14 JP JP2014531887A patent/JP5925898B2/ja not_active Expired - Fee Related
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Publication number | Publication date |
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KR20140063870A (ko) | 2014-05-27 |
US20130078799A1 (en) | 2013-03-28 |
TW201330100A (zh) | 2013-07-16 |
TWI505360B (zh) | 2015-10-21 |
US8691709B2 (en) | 2014-04-08 |
JP2014526804A (ja) | 2014-10-06 |
WO2013043512A1 (en) | 2013-03-28 |
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