WO2004102139A1 - Capteur d'infrarouge a rendement energetique ameliore - Google Patents

Capteur d'infrarouge a rendement energetique ameliore Download PDF

Info

Publication number
WO2004102139A1
WO2004102139A1 PCT/DE2004/000971 DE2004000971W WO2004102139A1 WO 2004102139 A1 WO2004102139 A1 WO 2004102139A1 DE 2004000971 W DE2004000971 W DE 2004000971W WO 2004102139 A1 WO2004102139 A1 WO 2004102139A1
Authority
WO
WIPO (PCT)
Prior art keywords
carrier substrate
sensor according
radiation
radiation sensor
layer
Prior art date
Application number
PCT/DE2004/000971
Other languages
German (de)
English (en)
Inventor
Marion Simon
Wilhelm Leneke
Mischa Schulze
Karlheinz Storck
Jörg SCHIEFERDECKER
Stephan Karl
Original Assignee
Heimann Sensor Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heimann Sensor Gmbh filed Critical Heimann Sensor Gmbh
Priority to JP2006529594A priority Critical patent/JP4685019B2/ja
Publication of WO2004102139A1 publication Critical patent/WO2004102139A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0808—Convex mirrors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0814—Particular reflectors, e.g. faceted or dichroic mirrors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the present invention relates to a radiation sensor, for example for non-contact temperature measurement or infrared gas spectroscopy.
  • thermometers A large number of techniques for measuring temperatures are known which take advantage of a large number of effects in measurement, in which physical or chemical substance properties show a temperature dependence. Almost all processes are based on heat transfer to the sensor or sensor. In the case of so-called touch thermometers, this heat transport takes place by conduction and convection, in the case of non-contact thermometers (radiation thermometers) by heat radiation.
  • the contact thermometers generally work very reliably and are usually simple and inexpensive to manufacture, their area of use is nevertheless restricted. For example, due to the material properties of the sensor, there is an upper temperature limit above which the sensor can no longer be operated. In addition, the contact thermometers are unsuitable for measuring the temperature of quickly moving or difficult to access objects.
  • thermometers which ideally have an absorption capacity that is independent of the wavelength and which heat up when the radiation (infrared radiation) strikes it, so that the heating of the adsorption element can serve as evidence of the emitted infrared radiation.
  • Radiation thermometers or so-called radiation pyrometers generally have optics, a detector with an absorption element and a housing which mechanically and thermally protects the optics and detector.
  • the infrared radiation emitted by the measurement object is imaged on an absorbing surface by suitable windows or optical components, this surface experiencing a temperature increase due to the absorption.
  • this method can in principle also be used to measure temperatures which are below the temperature of the detector. In this case, however, the temperature drop is greater than the temperature due to the self-radiation of the absorption element. increase due to the absorption of the detected radiation, so that a total decrease in temperature of the absorber element occurs.
  • the temperature increase or temperature difference can then be measured in different ways.
  • the thermistor Bolornetem one measures the change of the electrical resistance, with the thermocouples the voltage at the contact point of two metal wires, with the pyroelectric detectors a charge shift which arises with a temperature change of special insulator crystals.
  • thermocouples use the so-called Seebeck effect to detect the elevated temperature.
  • the connection point of a thermocouple made of two different thermoelectric materials is brought into contact with the absorber area, while the reference contact is generally at the temperature of the sensor housing. Since the sensor output voltages of such thermocouples are very low, many such thermocouples are often connected in series. Such a series connection of a large number of thermocouples is also referred to as a thermopile or thermopile.
  • miniaturized radiation sensors it is therefore particularly important for the miniaturized radiation sensors to achieve the highest possible absorption of the infrared radiation in the absorber system and to isolate the absorber surface thermally as well as possible from the surroundings in order to generate the greatest possible temperature increase and thus a large sensor output signal.
  • Radiation sensors are therefore already known with a detector designed as a chip, which consists of a support body with a recess and an absorber element, which absorbs radiation and is thereby heated, the absorber element being arranged above the recess, so that at least a section of the absorber element supports the support body not touched.
  • a membrane with very low thermal conductivity which essentially conceals the recess, is often arranged and the absorber element is positioned on the membrane. This ensures that the absorber element is largely thermally decoupled from the support body.
  • the known infrared sensors are mainly manufactured using silicon micromechanics and mounted in standard housings in electrical engineering.
  • EP 0 599 364 describes an infrared radiation detector in which the various chips, for example a thermopile array with an ASIC (application-specific circuit) for signal preprocessing and a memory IC on the base plate of a TO (transistor Outline) housing base are mounted.
  • the known TO housings have glazed pins for contacting and can therefore only be mounted on printed circuit boards in push-through contacting.
  • Modern SMD (Surface Mounted Device) mounting technology is not possible with this.
  • the infrared detector described in US Pat. No. 5,693,942 is also arranged in a TO housing, which must be mounted on printed circuit boards by means of push-through contacting.
  • the embodiment shown here has an additional recess in the housing base plate below the sensitive surface of the sensor chip.
  • the cutout which can also be designed to be reflective, serves to increase the distance between the absorber element and the carrier substrate in order to increase the sensitivity of the infrared sensor.
  • thermopile sensors available on the market each use a metal pin housing with a metal cap.
  • An optical element for example an infrared filter, is provided in the cap. Part of the infrared radiation falls through the infrared filter in the cap onto the area next to the sensor element, which usually consists of a metallic and thus also reflective TO bottom plate. These radiation components are reflected back to the absorber by multiple reflection on the housing wall or the metallic cap. These multiple reflections lead to an enlargement of the measuring spot, which is undesirable in those measuring arrangements which aim at the radiation or temperature measurement of a spatially limited measurement object. This is the normal case for non-contact temperature measurement.
  • the known solutions with a metal pin housing can only be contacted by means of a push-through contact on the next wiring level. This can be done, for example, by soft soldering. With the known solutions, SMD assembly techniques cannot be implemented.
  • a radiation sensor which has a detector, preferably a detector chip, consisting of a support body with a recess and an absorber element which absorbs radiation and is thereby heated, the absorber element being arranged above the recess, so that at least a section of the absorber element does not touch the support body and at least the base or the bottom surface the recess in the support body consists at least partially of a material which reflects the radiation to be detected.
  • a detector preferably a detector chip, consisting of a support body with a recess and an absorber element which absorbs radiation and is thereby heated, the absorber element being arranged above the recess, so that at least a section of the absorber element does not touch the support body and at least the base or the bottom surface the recess in the support body consists at least partially of a material which reflects the radiation to be detected.
  • This material which is preferably selected in such a way that it has practically no self-absorption and almost no transmission, reflects the radiation component that has passed through the absorber element back to the latter, in order to ensure that the reflected radiation component transmitted by the absorber element also increases the temperature of the Absorber element contributes.
  • the reflective layer or the reflective material can be arranged directly on or on the base or the bottom surface of the recess.
  • the recess in the support body is continuous, so that the absorber element is arranged directly above the material arranged under the support body.
  • At least the base or the bottom surface of the recess consists at least partially of a metallic material, preferably of gold.
  • the layer reflecting the radiation to be detected is advantageously designed as a layer and has a thickness of less than 2 ⁇ m.
  • the radiation sensor has a housing which consists of a carrier substrate and a cap with an opening which is designed such that the radiation to be detected can pass through the opening, the detector chip being arranged in the housing in this way, that the radiation passing through the opening at least partially strikes the absorber element.
  • the carrier substrate consists of a base material that is not electrically conductive. This feature in particular makes it possible to design the radiation sensor as an SMD (Surface Mounted Device).
  • SMD Surface Mounted Device
  • the carrier substrate advantageously consists of a ceramic base material, preferably of oxide ceramic or AIN ceramic.
  • the metal layer can then advantageously be formed by printed conductor and insulation tracks, preferably made of silver-palladium or silver-platinum.
  • the carrier substrate can also consist of an organic material, for example epoxy, Pertinax or polyimide, preferably FR2, FR3 or FR4.
  • the metal layer expediently consists of a metal layer laminated or additively applied with a thickness of preferably between approximately 20 and 150 ⁇ m, the metal layer preferably consisting of copper.
  • the carrier substrate has a radiation-absorbing layer as the uppermost layer around the support body, the radiation-absorbing layer being, for example, an organic lacquer, a photoresist or a solder resist.
  • the radiation-absorbing layer being, for example, an organic lacquer, a photoresist or a solder resist.
  • the carrier substrate has a marking which is arranged outside the cap, the marking being designed such that automatic positioning systems use the marking to provide orientation and / or can position the sensor.
  • the marking is advantageously arranged in the metallic layer.
  • the radiation-absorbing layer if it is present, does not extend over the entire carrier substrate, but rather leaves the metallic layer outside the cap at least partially uncovered, so that the marking can be arranged in the metallic layer.
  • connection contacts for the transmission of the detector signal from the housing are provided on the underside of the carrier substrate, ie on the side facing away from the cap.
  • the detector element is then advantageously connected to the connection contacts via metallized through-holes, so-called VIAs, through the carrier substrate, the connection contacts then preferably being designed as solder bumps.
  • VIAs metallized through-holes
  • the metallic layer and / or the radiation-absorbing layer, if these are present is advantageously interrupted in the immediate vicinity of the through holes. This creates a defined contact between the detector chip and the connection contact.
  • FIG. 1 shows a radiation sensor according to the invention in a top view from above with the cap removed
  • FIG. 2 shows a sectional view through the radiation sensor from FIG. 1,
  • FIG. 3 shows an alternative embodiment of the radiation sensor according to the invention, in which the carrier substrate is designed as a direct plug connector
  • Figure 4 shows a further alternative embodiment of the radiation sensor according to the invention, in which a plug connector is arranged on the top of the carrier substrate
  • Figure 5 shows a further alternative embodiment of the radiation sensor according to the invention, in which the carrier substrate is designed as a flex or rigid-flex circuit board, and that End of the circuit board is designed as a direct connector with direct connector contacts.
  • FIGS. 1 and 2 The basic structure of the temperature sensor according to the invention is shown in FIGS. 1 and 2.
  • a detector chip 2 which here has a thermopile element, a silicon circuit 3 and a temperature reference 4 for measuring the ambient temperature are fastened with good thermal contact to a carrier substrate 1, which is either made of an organic circuit board material or a ceramic, such as oxide ceramic or AIN -Ceramic, exists.
  • the temperature reference 4 can optionally also be integrated in the silicon circuit 3, which can be designed, for example, as an application-specific integrated circuit with an amplifier and compensation circuit, as a so-called ASIC.
  • This circuit represents the first stage for signal conditioning.
  • the detector chip also has several elements which, for. B. are arranged in the form of a line or matrix.
  • the individual components 2, 3 and 4 are preferably mounted on the carrier substrate 1 with the aid of a conductive adhesive, for example a silver-filled epoxy adhesive.
  • a conductive adhesive for example a silver-filled epoxy adhesive.
  • soldering the chip components with a tin-lead solder or with a lead-free solder is also possible.
  • the detector chip 2, the temperature reference element 4 and the silicon circuit 3 are electrically conductively connected to the connection contact surfaces 6 of the carrier substrate 1 by means of thin bond wires 5.
  • the carrier substrate 1 has a metallization 11.
  • the detector chip 2 is mounted on a support body 17 which has a recess 18.
  • the absorber element 19 of the detector chip 2 is arranged above the recess 18 of the support body 17 such that the absorber element 19 has no contact with the support body 17, at least in some areas.
  • the metallization 11 is equipped with a very well reflective coating 7, which can be designed, for example, as a thin, galvanically or chemically applied gold layer. Such a coating can be implemented inexpensively, since it is one of the standard processes in the production of printed circuit boards.
  • the carrier substrate 1 consists of an organic carrier substrate material, such as FR2, FR3, FR4 or polyimide, a laminated or additively applied metal layer 11, preferably between about 20 and 150 ⁇ m thick, is placed under the detector chip 2, under the temperature reference 4 or arranged under the silicon circuit 3 up to the cap contact surface.
  • a laminated or additively applied metal layer preferably between about 20 and 150 ⁇ m thick
  • the copper layer usually present in printed circuit boards can be used as the metal layer.
  • the metal layer 11 advantageously consists of a printed conductor track, for example of silver-palladium or silver-platinum.
  • the metal layer 11 is coated with an absorbent layer 8 around the chip elements 2, 3 and 4 as well as around the contact surfaces 6 and the circular segment surface for the cap assembly.
  • the absorbent layer 8 can, for example, consist of a solder resist, preferably in the case of organic substrate material or a printed insulation layer, preferably in the case of ceramic substrates. This ensures that undesired radiation components that fall next to the absorber element 19 on the substrate surface are not reflected, but are absorbed by the absorption layer 8. This measure counteracts an increase in the size of the measuring spot.
  • a metallic cap 9, which consists for example of steel, nickel, measurement or copper, is mounted on the carrier substrate 1 in a gas-tight manner.
  • the metallic cap 9 has an opening 21 with an infrared filter 10 is covered, which is preferably optically coated.
  • the filter 10 can be installed in the cap 9, for example by gluing, soft soldering or diffusion welding.
  • the connection 12 between the cap 9 on the one hand and the carrier substrate 1 on the other hand can advantageously be made by soft soldering or by gluing.
  • the connection medium 12 between the cap 9 and the carrier substrate 1 is preferably selected depending on the application in such a way that either an electrical contact and thus a good thermal connection between the cap 9 and the metal layer 11 or an electrically insulated assembly is realized.
  • metallic soft solder is advantageously used and in the second case dielectric filled epoxy resin adhesive is used.
  • connection contact surfaces 6, as can be clearly seen in FIG. 2, are connected through lead-through holes 13, which are also referred to as vias, in the carrier substrate 1 to the connection contacts 14, which are designed here as solder bumps.
  • the through holes 13 are metallized on the walls and are sealed gas-tight from the bottom, for example with the aid of a drop of adhesive 15 or a solder seal with a solder ball, after completion of the assembly. This closure ensures that the sensor and thus the detector element 2 is protected against environmental influences, such as moisture, aggressive gases, etc.
  • the closure takes place under a defined gas atmosphere, for example in the case of a dry nitrogen atmosphere or noble gas atmosphere, in order to ensure a defined gas and moisture ratio in the interior.
  • a defined gas atmosphere for example in the case of a dry nitrogen atmosphere or noble gas atmosphere, in order to ensure a defined gas and moisture ratio in the interior.
  • solder balls 14 arranged on the underside of the carrier substrate 1 make it easy to make contact with the sensor element with the next wiring level or with a plug connector or with a flexible printed circuit board which acts as intermediate wiring.
  • the metallizations of the through holes 13 are guided to the solder bumps 14 printed on.
  • a surface mount device (SMD) has been realized.
  • SMD surface mount device
  • BGA ball grid array
  • PBGA plastic ball grid array
  • the most permanent contact of the sensor element with the next wiring level which in most applications consists of a printed circuit board, can be achieved by automatically re-melting the solder bump, ie by re-melting the printed circuit board with the BGA the so-called reflow soldering.
  • ball grid array bases could also be used for contacting for the sensor test or even for final assembly.
  • the asymmetrical marking 16 which is produced, for example, using the metallization 11, can be clearly seen in FIG.
  • This asymmetrical marking 16 enables automatic detection and positioning of the sensor by means of commercially available placement and test machines.
  • the marking can be on the top, i.e. on the cap side of the carrier substrate and also on the underside on the carrier substrate 1, the arrangement of the marking on the top of the carrier substrate 1 being particularly preferred.
  • the sensor element according to the invention fulfills all the requirements that are placed on an SMD component.
  • the carrier substrate 1 if a standardized printed circuit board is selected as the carrier substrate 1, for example, further external components can also be applied to the front or the back of the carrier substrate 1. This can be particularly advantageous if the additional components have a high electrical power loss, which can lead to thermal influencing of the infrared sensor chip.
  • the carrier substrate 1 designed as a printed circuit board can also be designed in such a way that other contacts to the next wiring level are possible.
  • the carrier substrate 1 can be equipped as a printed circuit board with contacts 23 for direct plug connectors 22 (see FIG. 3), - the carrier substrate 1 can be equipped as a printed circuit board with a plug connector 24, which can be located on the upper or lower side of the carrier substrate (see FIG 4)
  • the carrier substrate 1 can be designed as a printed circuit board, which is designed as a flex or rigid-flex printed circuit board and the end of the printed circuit board is designed as a direct connector 22 with direct connector contacts 23 (see FIG. 5). LIST OF REFERENCES

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

La présente invention concerne un capteur de rayonnement, p. ex. pour la mesure sans contact de température ou la spectroscopie infrarouge de gaz, lequel capteur comprend une puce de détection (2) composée d'un corps porteur (17) présentant un évidement (18) et d'un élément absorbeur (19) qui absorbe le rayonnement de façon à chauffer, ledit élément absorbeur (19) étant placé au-dessus de l'évidement (18), de sorte qu'au moins une section de l'élément absorbeur (19) n'est pas en contact avec le corps porteur (17), et ledit corps porteur étant monté sur un substrat support (1). L'objectif de cette invention est de fournir un capteur de rayonnement comprenant un détecteur, de préférence une puce de détection, composé d'un corps porteur présentant un évidement et d'un élément absorbeur qui absorbe le rayonnement de façon à chauffer, ledit élément absorbant étant placé au-dessus de l'évidement, de sorte qu'au moins une section de l'élément absorbeur n'est pas en contact avec le corps porteur, et au moins la base ou le fond de l'évidement dans le corps porteur étant au moins partiellement constitué(e) d'une matière qui réfléchit le rayonnement à détecter. A cet effet, au moins la base ou le fond de l'évidement (18) est au moins partiellement constitué(e) d'une matière qui réfléchit le rayonnement à détecter et sous laquelle se trouve le substrat support (1).
PCT/DE2004/000971 2003-05-13 2004-05-10 Capteur d'infrarouge a rendement energetique ameliore WO2004102139A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006529594A JP4685019B2 (ja) 2003-05-13 2004-05-10 改善された放射活用を備えた赤外線センサー

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10321640.5 2003-05-13
DE10321640.5A DE10321640B4 (de) 2003-05-13 2003-05-13 Infrarotsensor mit verbesserter Strahlungsausbeute

Publications (1)

Publication Number Publication Date
WO2004102139A1 true WO2004102139A1 (fr) 2004-11-25

Family

ID=33394572

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/000971 WO2004102139A1 (fr) 2003-05-13 2004-05-10 Capteur d'infrarouge a rendement energetique ameliore

Country Status (3)

Country Link
JP (1) JP4685019B2 (fr)
DE (1) DE10321640B4 (fr)
WO (1) WO2004102139A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008544263A (ja) * 2005-06-27 2008-12-04 エイチエル−プラナー・テクニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング 電磁波検出用装置及びそのような装置製造のための方法
US8806743B2 (en) 2012-08-07 2014-08-19 Excelitas Technologies Singapore Pte. Ltd Panelized process for SMT sensor devices
CN110121634A (zh) * 2016-12-30 2019-08-13 海曼传感器有限责任公司 支持smd的红外热电堆传感器

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009048988A1 (de) * 2009-10-09 2011-04-14 Volkswagen Ag Thermoelektrische Teileinheit, thermoelektrische Einheit, thermoelektrisches Element und Verbindungsverfahren
JP6194799B2 (ja) * 2014-01-15 2017-09-13 オムロン株式会社 赤外線センサ
JP6857019B2 (ja) * 2016-12-20 2021-04-14 セイコーＮｐｃ株式会社 センサモジュールの製造方法
JP6820789B2 (ja) * 2017-04-07 2021-01-27 セイコーＮｐｃ株式会社 赤外線センサ装置
DE202018100322U1 (de) 2018-01-20 2018-01-31 LOEWE Technologies GmbH Vorrichtung für die Erfassung mindestens der CO2-Konzentration in der Umgebungsluft
DE102019206407A1 (de) * 2019-05-03 2020-11-05 Siemens Aktiengesellschaft Messverfahren und Messanordnung

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0354369A2 (fr) * 1988-08-12 1990-02-14 Texas Instruments Incorporated Détecteur infrarouge
DE3927735A1 (de) * 1989-08-23 1991-02-28 Asea Brown Boveri Strahlungsthermometer
US5693942A (en) * 1995-04-07 1997-12-02 Ishizuka Electronics Corporation Infrared detector
EP0913675A1 (fr) * 1997-10-28 1999-05-06 Matsushita Electric Works, Ltd. Capteur infrarouge
DE19923960A1 (de) * 1998-05-25 1999-12-02 Murata Manufacturing Co Infrarotsensor
WO2001048449A2 (fr) * 1999-12-24 2001-07-05 Perkinelmer Optoelectronics Gmbh Procede de correction du signal de sortie d'un detecteur a elements multiples a rayonnement infrarouge et systeme de detecteur a elements multiples a rayonnement infrarouge

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04268773A (ja) * 1991-02-25 1992-09-24 Matsushita Electric Works Ltd 赤外線センサおよびその製造方法
US5426412A (en) * 1992-10-27 1995-06-20 Matsushita Electric Works, Ltd. Infrared detecting device and infrared detecting element for use in the device
DE4244607A1 (de) * 1992-12-31 1994-07-07 Hl Planartechnik Gmbh Thermoelektrischer Strahlungssensor, insbesondere für infrarotes und sichtbares Licht
US5645349A (en) * 1994-01-10 1997-07-08 Thermoscan Inc. Noncontact active temperature sensor
US6307194B1 (en) * 1999-06-07 2001-10-23 The Boeing Company Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method
JP2001272271A (ja) * 2000-01-17 2001-10-05 Mitsubishi Electric Corp 赤外線センサ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0354369A2 (fr) * 1988-08-12 1990-02-14 Texas Instruments Incorporated Détecteur infrarouge
DE3927735A1 (de) * 1989-08-23 1991-02-28 Asea Brown Boveri Strahlungsthermometer
US5693942A (en) * 1995-04-07 1997-12-02 Ishizuka Electronics Corporation Infrared detector
EP0913675A1 (fr) * 1997-10-28 1999-05-06 Matsushita Electric Works, Ltd. Capteur infrarouge
DE19923960A1 (de) * 1998-05-25 1999-12-02 Murata Manufacturing Co Infrarotsensor
WO2001048449A2 (fr) * 1999-12-24 2001-07-05 Perkinelmer Optoelectronics Gmbh Procede de correction du signal de sortie d'un detecteur a elements multiples a rayonnement infrarouge et systeme de detecteur a elements multiples a rayonnement infrarouge

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008544263A (ja) * 2005-06-27 2008-12-04 エイチエル−プラナー・テクニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング 電磁波検出用装置及びそのような装置製造のための方法
US8806743B2 (en) 2012-08-07 2014-08-19 Excelitas Technologies Singapore Pte. Ltd Panelized process for SMT sensor devices
CN110121634A (zh) * 2016-12-30 2019-08-13 海曼传感器有限责任公司 支持smd的红外热电堆传感器
US11268861B2 (en) 2016-12-30 2022-03-08 Heimann Sensor Gmbh SMD-enabled infrared thermopile sensor

Also Published As

Publication number Publication date
DE10321640A1 (de) 2004-12-02
JP2007503586A (ja) 2007-02-22
DE10321640B4 (de) 2016-12-22
JP4685019B2 (ja) 2011-05-18

Similar Documents

Publication Publication Date Title
DE60132460T2 (de) Sensoreinheit, insbesondere für Fingerabdrucksensoren
EP1046030B1 (fr) Systeme de mesure de l'humidite
DE102005047482A1 (de) Magnetoresistives Sensormodul und Verfahren zum Herstellen desselben
DE102005047414A1 (de) Magnetoresistives Sensormodul und Verfahren zum Herstellen desselben
DE102008027999A1 (de) Halbleitersensor
WO2018122148A1 (fr) Capteur infrarouge à thermopile cms
DE19923960C2 (de) Infrarotsensor
DE10054013A1 (de) Drucksensormodul
WO2004102140A1 (fr) Capteur d'infrarouge a utilisation de surface optimisee
DE10321640B4 (de) Infrarotsensor mit verbesserter Strahlungsausbeute
DE102004031316B3 (de) Gassensor-Modul zur spektroskopischen Messung einer Gaskonzentration
EP1568978B1 (fr) Capteur de température
EP2464953B1 (fr) Détecteur infrarouge compact et son procédé de fabrication, ainsi que système de détecteurs infrarouges doté du détecteur infrarouge
DE10335690A1 (de) Verformungssensor
EP3058314B1 (fr) Élément détecteur
EP1103808A2 (fr) Capteur de gaz et procédé de sa fabrication
DE10125694A1 (de) Halbleitermodul mit mindestens einem Temperatursensor
DE10321649A1 (de) Infrarotsensor mit Signalverarbeitung
DE102022204223A1 (de) Vorrichtung zur Temperaturmessung einer thermischen Quelle und Temperatursensor
WO1994023304A1 (fr) Puce de semi-conducteur
DE4438673A1 (de) Pyroelektrischer Infrarot-Array-Sensor
DE102018203101A1 (de) Gehäuste halbleitervorrichtungen und verfahren zur herstellung gehäuster halbleitervorrichtungen
DE19917438A1 (de) Schaltungsanordnung und Verfahren zu ihrer Herstellung
EP2261618A1 (fr) Source infrarouge miniature
DE102021111260A1 (de) Thermische Strahlungsquelle und Verfahren zur Messung der exakten Temperatur und / oder abgestrahlten Strahlungsleistung der thermischen Strahlungsquelle

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2006529594

Country of ref document: JP

WD Withdrawal of designations after international publication

Free format text: DE

122 Ep: pct application non-entry in european phase