JP2007503586A - 改善された放射活用を備えた赤外線センサー - Google Patents
改善された放射活用を備えた赤外線センサー Download PDFInfo
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- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
Description
キャリア基板1は、ダイレクト・プラグ・コネクタ22に接点23を設けたPCBでもよい(図3を参照)。
キャリア基板1は、キャリア基板の上面側または下面側に配置できる、プラグ・コネクタ24を設けたPCBであってもよい(図4を参照)。
キャリア基板1は、フレックスまたは堅固でフレックスなPCBとして設計されたPCBであってもよく、前記PCBの一端はダイレクト・プラグ−ソケット・コネクタ接点を備えたダイレクト・プラグ・コネクタ22であってもよい(図5を参照)。
2 検出器チップ
3 シリコン回路
4 温度基準要素
5 結合ワイヤ
6 端子接続面
7 反射材料
8 放射線吸収層
9 キャップ
10 フィルタ
11 金属ケーブル/層
12 キャップとキャリア基板との接続部
13 スルーホール
14 端子接点/ハンダ・ランプ
15 シール剤
16 マーク
17 支持体
18 凹部
19 吸収器エレメント
20 キャップ静止面
21 キャップ開口部
22 ダイレクト・プラグ・コネクタ
23 ダイレクト・プラグ−ソケット・コネクタ接点
24 プラグ−ソケット・コネクタ
25 プラグ・コネクタ接続ピン
Claims (22)
- 放射線を吸収し、結果として加熱される吸収器エレメント(19)と凹部(18)とを備えた支持体(17)から成る検出器チップ(2)を有する、例えば、非接触温度測定または赤外線ガス分光用の放射線センサーであって、吸収器エレメント(19)が凹部(18)の上方に配置され、吸収器エレメント(19)の少なくとも一部が支持体(17)に接触せず、かつ、前記支持体がキャリア基板(1)に実装されているので、前記凹部(18)の少なくとも底面またはベース表面が、少なくとも部分的に、検出すべき放射線を反射するとともに、下方にキャリア基板(1)が配置されている材料(7)で製造されていることを特徴とする前記の放射線センサー。
- 凹部(18)の少なくとも底面またはベース表面が、少なくとも部分的に、金属材料(7)、好ましくは金で製造され、前記材料は好ましくは層の形状であり、かつ、好ましくは1μm未満の厚みを有していることを特徴とする請求項1に記載の放射線センサー。
- 検出すべき放射線が開口部(21)を介して入射できるように設計されている開口部(21)を備えたキャップ(9)と、キャリア基板(1)とから成るハウジング(1、9)が設けられ、検出器(2)が、開口部(21)を介して入射する放射線が吸収器エレメント(19)を少なくとも部分的にヒットするようにハウジング(1、9)内に配置されていることを特徴とする請求項1または2に記載の放射線センサー。
- キャリア基板(1)が導電体でないベース材料から成ることを特徴とする請求項3に記載の放射線センサー。
- キャリア基板(1)が、少なくともセクション(17)までキャリア基板(11)上を延在する金属ワイヤまたは層(11)を有し、その上で、キャップ(9)がキャリア基板(1)に接するとともに、前記キャップ(9)内に配置されているキャリア基板の表面領域の大部分を被覆することを特徴とする請求項3または4に記載の放射線センサー。
- キャリア基板(1)が、セラミックベース材料、好ましくは酸化物セラミックまたはAINセラミックであることを特徴とする請求項4または5に記載の放射線センサー。
- 金属ワイヤまたは金属層(11)が、プリントされた導電性の絶縁性トラックで形成され、好ましくは銀−パラジウムまたは銀−プラチナ製であることを特徴とし、請求項5に基づき、かつ、請求項6に記載の放射線センサー。
- キャリア基板(1)が、有機材料、好ましくはエポキシド、ペルチナクス(pertinax)、またはポリイミド、特に好ましくはFR2、FR3、またはFR4から成ることを特徴とする、請求項4または5に記載の放射線センサー。
- 金属層(11)が、好ましくは約20〜150μmの範囲の厚みで、積層または添加して加えられた金属層であり、前記金属層(11)が好ましくは銅であることを特徴とし、請求項7に基づき、かつ、請求項8に記載の放射線センサー。
- キャリア基板(1)が、放射線吸収層(8)をキャリア基板(17)の周囲の最上層に有し、前記放射線吸収層(8)が有機性ラッカー、フォトレジスト、または、ハンダ・レジスタンス・ラッカーであることを特徴とする請求項3ないし9のいずれか1項に記載の放射線センサー。
- キャリア基板(1)が、キャップ(9)の外側に設置された少なくとも一つのマーク(16)を有し、前記マーク(16)は、自動位置決めシステムが、マーク(16)の支援により、センサーの方向設定および/または位置決めを実行できるように設けられていることを特徴とする請求項3ないし10のいずれか1項に記載の放射線センサー。
- マーク(16)が金属層(11)に配置されていることを特徴とする請求項11に記載の放射線センサー。
- 温度基準要素(4)が検出器(2)から離して設けられていることを特徴とする請求項1ないし12のいずれか1項に記載の放射線センサー。
- 一つの回路(8)、好ましくはシリコン回路が、検出器信号を処理するために設けられていることを特徴とする請求項1ないし13のいずれか1項に記載の放射線センサー。
- 端子接点(14)が、キャリア基板(1)の下面側に、ハウジング(2、9)から検出器信号を送るために設けられていることを特徴とする請求項3ないし14のいずれか1項に記載の放射線センサー。
- 検出器エレメントがキャリア基板(1)を経由し、金属メッキしたスルーホール13を介して端子接点(14)に接続され、前記端子接点(14)が好ましくはハンダ・ランプとして設計されていることを特徴とする請求項15に記載の放射線センサー。
- 金属層(11)がスルーホール(13)の近傍で中断されていることを特徴とし、請求項5に基づき、かつ、請求項15または16に記載の放射線センサー。
- 放射線吸収層(8)がスルーホール(13)の近傍で中断されることを特徴とし、請求項10に基づき、かつ、請求項15ないし17のいずれか1項に記載の放射線センサー。
- スルーホール(13)がガス充填状態で密封され、好ましくはシール剤(15)で封止されていることを特徴とする請求項15ないし18のいずれか1項に記載の放射線センサー。
- キャリア基板(1)がダイレクト・プラグ・コネクタ(22)として設計されていることを特徴とする請求項1ないし19のいずれか1項に記載の放射線センサー。
- キャリア基板(1)の上面側または下面側に、プラグ・コネクタ(24)が、好ましくはハンダ処理または接着処理で固定されていることを特徴とする請求項1ないし19のいずれか1項に記載の放射線センサー。
- キャリア基板(1)がフレキシブルなPCBとしてまたは堅固でフレックスPCBとして設計され、前記PCBがその一端にダイレクト・プラグ・コネクタ構造(22)を有することを特徴とする請求項1ないし19のいずれか1項に記載の放射線センサー。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10321640.5A DE10321640B4 (de) | 2003-05-13 | 2003-05-13 | Infrarotsensor mit verbesserter Strahlungsausbeute |
PCT/DE2004/000971 WO2004102139A1 (de) | 2003-05-13 | 2004-05-10 | Infrarotsensor mit verbesserter strahlungsausbeute |
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Publication Number | Publication Date |
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JP2007503586A true JP2007503586A (ja) | 2007-02-22 |
JP4685019B2 JP4685019B2 (ja) | 2011-05-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006529594A Expired - Fee Related JP4685019B2 (ja) | 2003-05-13 | 2004-05-10 | 改善された放射活用を備えた赤外線センサー |
Country Status (3)
Country | Link |
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JP (1) | JP4685019B2 (ja) |
DE (1) | DE10321640B4 (ja) |
WO (1) | WO2004102139A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015132573A (ja) * | 2014-01-15 | 2015-07-23 | オムロン株式会社 | 赤外線センサ |
JP2018100898A (ja) * | 2016-12-20 | 2018-06-28 | セイコーNpc株式会社 | センサモジュールの製造方法 |
JP2018179628A (ja) * | 2017-04-07 | 2018-11-15 | セイコーNpc株式会社 | 赤外線センサ装置 |
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JP2008544263A (ja) * | 2005-06-27 | 2008-12-04 | エイチエル−プラナー・テクニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | 電磁波検出用装置及びそのような装置製造のための方法 |
DE102009048988A1 (de) * | 2009-10-09 | 2011-04-14 | Volkswagen Ag | Thermoelektrische Teileinheit, thermoelektrische Einheit, thermoelektrisches Element und Verbindungsverfahren |
US8806743B2 (en) | 2012-08-07 | 2014-08-19 | Excelitas Technologies Singapore Pte. Ltd | Panelized process for SMT sensor devices |
CN110121634B (zh) * | 2016-12-30 | 2022-04-08 | 海曼传感器有限责任公司 | 支持smd的红外热电堆传感器 |
DE202018100322U1 (de) | 2018-01-20 | 2018-01-31 | LOEWE Technologies GmbH | Vorrichtung für die Erfassung mindestens der CO2-Konzentration in der Umgebungsluft |
DE102019206407A1 (de) * | 2019-05-03 | 2020-11-05 | Siemens Aktiengesellschaft | Messverfahren und Messanordnung |
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JPH04268773A (ja) * | 1991-02-25 | 1992-09-24 | Matsushita Electric Works Ltd | 赤外線センサおよびその製造方法 |
JPH08278192A (ja) * | 1995-04-07 | 1996-10-22 | Ishizuka Denshi Kk | 赤外線検出器 |
EP0913675A1 (en) * | 1997-10-28 | 1999-05-06 | Matsushita Electric Works, Ltd. | Infrared sensor |
WO2001048449A2 (en) * | 1999-12-24 | 2001-07-05 | Perkinelmer Optoelectronics Gmbh | Method for the correction of the output signal of an infra red radiation multiple element sensor |
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Cited By (3)
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JP2015132573A (ja) * | 2014-01-15 | 2015-07-23 | オムロン株式会社 | 赤外線センサ |
JP2018100898A (ja) * | 2016-12-20 | 2018-06-28 | セイコーNpc株式会社 | センサモジュールの製造方法 |
JP2018179628A (ja) * | 2017-04-07 | 2018-11-15 | セイコーNpc株式会社 | 赤外線センサ装置 |
Also Published As
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DE10321640B4 (de) | 2016-12-22 |
DE10321640A1 (de) | 2004-12-02 |
WO2004102139A1 (de) | 2004-11-25 |
JP4685019B2 (ja) | 2011-05-18 |
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