DE10321640B4 - Infrarotsensor mit verbesserter Strahlungsausbeute - Google Patents

Infrarotsensor mit verbesserter Strahlungsausbeute Download PDF

Info

Publication number
DE10321640B4
DE10321640B4 DE10321640.5A DE10321640A DE10321640B4 DE 10321640 B4 DE10321640 B4 DE 10321640B4 DE 10321640 A DE10321640 A DE 10321640A DE 10321640 B4 DE10321640 B4 DE 10321640B4
Authority
DE
Germany
Prior art keywords
carrier substrate
radiation
sensor according
radiation sensor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10321640.5A
Other languages
German (de)
English (en)
Other versions
DE10321640A1 (de
Inventor
Dr. Simon Marion
Mischa Schulze
Dr. Leneke Wilhelm
Karlheinz Storck
Dr. Schieferdecker Jörg
Stephan Karl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HEIMANN Sensor GmbH
Original Assignee
HEIMANN Sensor GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HEIMANN Sensor GmbH filed Critical HEIMANN Sensor GmbH
Priority to DE10321640.5A priority Critical patent/DE10321640B4/de
Priority to PCT/DE2004/000971 priority patent/WO2004102139A1/de
Priority to JP2006529594A priority patent/JP4685019B2/ja
Publication of DE10321640A1 publication Critical patent/DE10321640A1/de
Application granted granted Critical
Publication of DE10321640B4 publication Critical patent/DE10321640B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/04Casings
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/04Casings
    • G01J5/041Mountings in enclosures or in a particular environment
    • G01J5/045Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/04Casings
    • G01J5/046Materials; Selection of thermal materials
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0808Convex mirrors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0814Particular reflectors, e.g. faceted or dichroic mirrors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0853Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
DE10321640.5A 2003-05-13 2003-05-13 Infrarotsensor mit verbesserter Strahlungsausbeute Expired - Fee Related DE10321640B4 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE10321640.5A DE10321640B4 (de) 2003-05-13 2003-05-13 Infrarotsensor mit verbesserter Strahlungsausbeute
PCT/DE2004/000971 WO2004102139A1 (de) 2003-05-13 2004-05-10 Infrarotsensor mit verbesserter strahlungsausbeute
JP2006529594A JP4685019B2 (ja) 2003-05-13 2004-05-10 改善された放射活用を備えた赤外線センサー

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10321640.5A DE10321640B4 (de) 2003-05-13 2003-05-13 Infrarotsensor mit verbesserter Strahlungsausbeute

Publications (2)

Publication Number Publication Date
DE10321640A1 DE10321640A1 (de) 2004-12-02
DE10321640B4 true DE10321640B4 (de) 2016-12-22

Family

ID=33394572

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10321640.5A Expired - Fee Related DE10321640B4 (de) 2003-05-13 2003-05-13 Infrarotsensor mit verbesserter Strahlungsausbeute

Country Status (3)

Country Link
JP (1) JP4685019B2 (ja)
DE (1) DE10321640B4 (ja)
WO (1) WO2004102139A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202018100322U1 (de) 2018-01-20 2018-01-31 LOEWE Technologies GmbH Vorrichtung für die Erfassung mindestens der CO2-Konzentration in der Umgebungsluft
WO2018122148A1 (de) 2016-12-30 2018-07-05 Heimann Sensor Gmbh Smd-fähiger thermopile infrarot sensor

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101213429B (zh) * 2005-06-27 2012-02-08 Hl-平面技术有限公司 用于检测电磁波的器件以及生产这样的器件的方法
DE102009048988A1 (de) * 2009-10-09 2011-04-14 Volkswagen Ag Thermoelektrische Teileinheit, thermoelektrische Einheit, thermoelektrisches Element und Verbindungsverfahren
US8806743B2 (en) 2012-08-07 2014-08-19 Excelitas Technologies Singapore Pte. Ltd Panelized process for SMT sensor devices
JP6194799B2 (ja) * 2014-01-15 2017-09-13 オムロン株式会社 赤外線センサ
JP6857019B2 (ja) * 2016-12-20 2021-04-14 セイコーNpc株式会社 センサモジュールの製造方法
JP6820789B2 (ja) * 2017-04-07 2021-01-27 セイコーNpc株式会社 赤外線センサ装置
DE102019206407A1 (de) * 2019-05-03 2020-11-05 Siemens Aktiengesellschaft Messverfahren und Messanordnung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0599364A2 (en) * 1992-10-27 1994-06-01 Matsushita Electric Works, Ltd. Infrared detecting device and infrared detecting element for use in the device
DE4244607A1 (de) * 1992-12-31 1994-07-07 Hl Planartechnik Gmbh Thermoelektrischer Strahlungssensor, insbesondere für infrarotes und sichtbares Licht
WO1995018961A1 (en) * 1994-01-10 1995-07-13 Thermoscan, Inc. Noncontact active temperature sensor
US5693942A (en) * 1995-04-07 1997-12-02 Ishizuka Electronics Corporation Infrared detector
WO2000075616A1 (en) * 1999-06-07 2000-12-14 The Boeing Company Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68923589T2 (de) * 1988-08-12 1996-01-18 Texas Instruments Inc Infrarot-Detektor.
DE3927735A1 (de) * 1989-08-23 1991-02-28 Asea Brown Boveri Strahlungsthermometer
JPH04268773A (ja) * 1991-02-25 1992-09-24 Matsushita Electric Works Ltd 赤外線センサおよびその製造方法
JPH11132857A (ja) * 1997-10-28 1999-05-21 Matsushita Electric Works Ltd 赤外線検出器
JP3289677B2 (ja) * 1998-05-25 2002-06-10 株式会社村田製作所 赤外線センサ
DE19962938A1 (de) * 1999-12-24 2001-07-19 Perkinelmer Optoelectronics Verfahren zum Korrigieren des Ausgangssignals eines Infrarotstrahlungsmehrelementsensors, Infrarotstrahlungsmehrelementsensor und Infrarotstrahlungsmehrelementsensorsystem
JP2001272271A (ja) * 2000-01-17 2001-10-05 Mitsubishi Electric Corp 赤外線センサ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0599364A2 (en) * 1992-10-27 1994-06-01 Matsushita Electric Works, Ltd. Infrared detecting device and infrared detecting element for use in the device
DE4244607A1 (de) * 1992-12-31 1994-07-07 Hl Planartechnik Gmbh Thermoelektrischer Strahlungssensor, insbesondere für infrarotes und sichtbares Licht
WO1995018961A1 (en) * 1994-01-10 1995-07-13 Thermoscan, Inc. Noncontact active temperature sensor
US5693942A (en) * 1995-04-07 1997-12-02 Ishizuka Electronics Corporation Infrared detector
WO2000075616A1 (en) * 1999-06-07 2000-12-14 The Boeing Company Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018122148A1 (de) 2016-12-30 2018-07-05 Heimann Sensor Gmbh Smd-fähiger thermopile infrarot sensor
DE102017131049A1 (de) 2016-12-30 2018-07-05 Heimann Sensor Gmbh SMD-fähiger Thermopile Infrarot Sensor
EP4191215A1 (de) 2016-12-30 2023-06-07 Heimann Sensor GmbH Smd-fähiger thermopile infrarot sensor
DE202018100322U1 (de) 2018-01-20 2018-01-31 LOEWE Technologies GmbH Vorrichtung für die Erfassung mindestens der CO2-Konzentration in der Umgebungsluft

Also Published As

Publication number Publication date
JP2007503586A (ja) 2007-02-22
DE10321640A1 (de) 2004-12-02
WO2004102139A1 (de) 2004-11-25
JP4685019B2 (ja) 2011-05-18

Similar Documents

Publication Publication Date Title
DE60132460T2 (de) Sensoreinheit, insbesondere für Fingerabdrucksensoren
EP1046030B1 (de) Anordnung zur feuchtemessung
DE10054013A1 (de) Drucksensormodul
DE10321640B4 (de) Infrarotsensor mit verbesserter Strahlungsausbeute
DE102004031316B3 (de) Gassensor-Modul zur spektroskopischen Messung einer Gaskonzentration
DE19923960C2 (de) Infrarotsensor
DE60226240T2 (de) Beschleunigungsaufnehmer
WO2004102140A1 (de) Infrarotsensor mit optimierter flächennutzung
EP1328796A1 (de) Sensoreinheit mit einem luftfeuchte-sensor und mit einem lufttemperatur-sensor
DE4440078A1 (de) Piezoelektrischer Beschleunigungsaufnehmer
DE10335690A1 (de) Verformungssensor
EP1568978B1 (de) Temperatursensor
DE19708053B4 (de) Verfahren und Sensoranordnung zur Dedektion von Kondensationen an Oberflächen
EP3058314B1 (de) Sensorelement
EP2464953B1 (de) Kompakter infrarotlichtdetektor und verfahren zur herstellung desselben sowie ein infrarotlichtdetektorsystem mit dem infrarotlichtdetektor
DE102005021494A1 (de) Bauelementemodul und Verfahren zu dessen Verwendung
EP1103808A2 (de) Gassensor und Verfahren zu dessen Herstellung
DE3818191C2 (ja)
DE102009060217B3 (de) Verfahren zum Herstellen eines Infrarotlichtdetektors
DE10125694A1 (de) Halbleitermodul mit mindestens einem Temperatursensor
DE19917438A1 (de) Schaltungsanordnung und Verfahren zu ihrer Herstellung
EP2778119B1 (de) Sensor und Verfahren zum Herstellen einer flexiblen Lötverbindung zwischen einem Sensor und einer Leiterplatte
DE102005000616A1 (de) Gassensormodul
DE102008034033B4 (de) Mikroelektronisches Sensorbauelement
DE102005023377A1 (de) Flowsensor mit Sensorchipelement

Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
R016 Response to examination communication
R016 Response to examination communication
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee