WO2004065315A1 - 合成石英ガラス光学部材及びその製造方法 - Google Patents
合成石英ガラス光学部材及びその製造方法 Download PDFInfo
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- WO2004065315A1 WO2004065315A1 PCT/JP2004/000467 JP2004000467W WO2004065315A1 WO 2004065315 A1 WO2004065315 A1 WO 2004065315A1 JP 2004000467 W JP2004000467 W JP 2004000467W WO 2004065315 A1 WO2004065315 A1 WO 2004065315A1
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- quartz glass
- synthetic quartz
- optical member
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- glass optical
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1415—Reactant delivery systems
- C03B19/1423—Reactant deposition burners
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1453—Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/0085—Compositions for glass with special properties for UV-transmitting glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/07—Impurity concentration specified
- C03B2201/075—Hydroxyl ion (OH)
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/08—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant
- C03B2201/12—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant doped with fluorine
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
- C03B2201/21—Doped silica-based glasses doped with non-metals other than boron or fluorine doped with molecular hydrogen
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/36—Fuel or oxidant details, e.g. flow rate, flow rate ratio, fuel additives
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/08—Doped silica-based glasses containing boron or halide
- C03C2201/12—Doped silica-based glasses containing boron or halide containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
- C03C2201/21—Doped silica-based glasses containing non-metals other than boron or halide containing molecular hydrogen
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
- C03C2201/23—Doped silica-based glasses containing non-metals other than boron or halide containing hydroxyl groups
Definitions
- Synthetic quartz glass optical member and method of manufacturing the same
- the present invention relates to a synthetic quartz glass optical system used as an illumination optical system of an ultraviolet laser of an optical lithography apparatus, a lens member of a projection optical system, a reticle substrate for printing a circuit pattern of an integrated circuit, and the like.
- a synthetic quartz glass optical system used as an illumination optical system of an ultraviolet laser of an optical lithography apparatus, a lens member of a projection optical system, a reticle substrate for printing a circuit pattern of an integrated circuit, and the like.
- the present invention relates to a synthetic quartz glass optical member capable of using a light source in a long region and a method for manufacturing the same.
- Optical lithography equipment is mainly used for transferring integrated circuit patterns such as IC and LSI.
- the projection optical system used in this apparatus is required to have a large, exposed area and a high resolution over the entire exposed area with the high integration of integrated circuits.
- NA numerical aperture
- the resolution and depth of focus of a projection lens for an optical lithography apparatus are expressed by the following Rayleigh equation.
- ⁇ indicates the exposure wavelength
- ⁇ indicates the numerical aperture of the projection lens
- k 1 and I ⁇ 2 indicate the process constants.
- the wavelength of the light source is changed from the g-line (wavelength 436 nm) of the mercury lamp to the i-line (wavelength 365 nm), and further to KrF ( Excimer lasers with a wavelength of 248 nm and ArF (193 nm) excimer lasers are being shortened.
- the optical glass used as an illumination optical system of an optical lithography apparatus using a light source having a wavelength longer than the i-line or a lens member of a projection optical system has a sharp transmittance in a wavelength region shorter than the i-line. Most of the optical glass does not pass through in the wavelength region below 250 nm. Therefore, as a material for the lens members that compose the optical system of the optical lithography apparatus that uses an excimer laser as a light source, it has durability against excimer lasers and can achieve sufficient transmittance even in a wavelength region of 250 nm or less. Materials must be selected.
- quartz glass and fluorite C a F 2
- quartz glass and fluorite C a F 2
- these are indispensable materials for performing chromatic aberration correction by an excimer laser optical system.
- the material used for this reticle substrate is not only resistant to excimer lasers, but also has a significant problem of thermal expansion due to heat generation. You. Therefore, it is required that the material used for the reticle substrate be a material having good transmittance and durability and a small thermal expansion coefficient. Quartz glass has less transmission loss of light, yet are resistant to temperature changes, and superior small linear expansion coefficient in the vicinity of room temperature to about 5.
- ordinary quartz glass has a large transmission loss due to internal absorption and scattering in the wavelength region of 200 nm or less, especially 190 nm or less, and also has color-sensing, heat generation, fluorescence, The optical performance tends to decrease due to compaction where the density changes. Therefore, the application of ordinary quartz glass to light having a wavelength of about an ArF excimer laser (wavelength: 193 nm) is the limit, and ordinary quartz glass is used for light of a shorter wavelength. It was generally considered difficult to use the reticle substrate used.
- fluorite C a F 2
- quartz glass this fluorite is less resistant to temperature changes, is fragile and easily damaged, breaks during the pattern formation process, and has a linear expansion coefficient of about 40 times that of quartz glass. Due to the large size, it is difficult to form a mask pattern with high accuracy, and the temperature must be extremely strictly controlled when the exposure process is applied to an exposure apparatus.20 Synthetic silica glass optical members with improved optical performance in the wavelength region of 0 nm or less, particularly in the wavelength range of 190 nm or less, are being studied.
- the synthetic quartz glass optical member containing an OH group has the advantage that the OH group can be contained to reduce the reduction type defects of ⁇ S i —S i, etc. It is known that NB 0 HC is easily induced from the 0 H group. Further, a synthetic quartz glass optical member in which fluorine is doped to suppress induced absorption has been proposed, and Japanese Patent Application Laid-Open No. 4-195101 discloses 0.5 wt% to 3.0 wt%.
- Fluorine is doped in the range of%.
- the binding energy of the 3-S 1-F bond generated by fluorine is high and stable against ultraviolet irradiation, it is necessary to suppress the reduced absorption of ⁇ S i -S i ⁇ ⁇ to suppress the induced absorption.
- an E 'center is generated by ultraviolet irradiation, it can be combined with fluorine in the synthetic quartz glass optical member to form triSi-F, thereby improving the UV resistance. It is possible. Further, a transmittance of 80% or more is obtained in the ultraviolet and vacuum ultraviolet region from 1550 nm to 400 nm.
- Figures 1 and 2 and related explanations in this document indicate that fluorine-doped synthetic quartz glass and synthetic quartz glass containing high concentrations of OH do not show defect absorption but contain low concentrations of OH.
- Japanese Patent Application Laid-Open No. 2001-194550 proposes a synthetic quartz glass optical member containing fluorine in the form of a Si—F bond, which reduces the 0H group concentration. Therefore, Si-F is contained, and the induced absorption is reduced by a large amount of hydrogen molecules.
- the concentration of the 0H group is set to 5 ppm or less, and S i _ If the F concentration is high, reduced defects may be newly generated and the UV resistance may be reduced. Therefore, the Si—F concentration is set to 300 ppm by weight or less, that is, 0.3 wt% or less. .
- a first object of the present invention is to provide a synthetic quartz glass optical member having a high ultraviolet transmittance while appropriately suppressing the action of alleviating induced absorption.
- a second object of the present invention is to provide a synthetic glass optical member having excellent UV transmittance uniformity and UV resistance.
- a third object of the present invention is to configure an optical system of an optical lithography apparatus using a short wavelength ultraviolet light having a wavelength of 200 ⁇ m or less as a light source.
- An object of the present invention is to provide a synthetic quartz glass optical member suitable for performing the above.
- a synthetic quartz glass optical member having a F (fluorine) concentration of 0.5 wt% to 3.0 wt% and an OH group concentration of 1 ppb (weight ppb), which are bonded to Si.
- a synthetic quartz glass optical member is provided, characterized by having a hydrogen molecule concentration of 1 to 10 ppm (weight ppm) and a hydrogen molecule concentration of 1 x 10 1 ⁇ / cm 3 to 5 x 10 17 / cm 3. You. More preferably, the 0 H group concentration is 1 ppb to 5 ppb.
- the F (fluorine) concentration, the OH group concentration, and the hydrogen molecule concentration are limited to specific ranges as described above, so that the inside of the F 2 laser (wavelength: 157.6 nm) is reduced. It can achieve a transmittance of 90% or more (per 1/4 inch (approximately 3.54 mm)), especially 93% or more. Furthermore, when the OH group concentration is 1 ppm or less and the concentration of F bonded to Si is 2.7 wt% or less, an internal transmittance of 95% or more can be achieved.
- the in-plane distribution of the internal transmittance of the F 2 laser (wavelength 157.6 nm) on the light transmitting surface is within ⁇ 0.5%, particularly ⁇ 0.4%. Within the range.
- an energy density of 0.1 to 10 mJ / cm 2 / pulse of F 2 (wavelength . 6 nm) induced absorbed by the 1 X 1 0 7 pulse irradiation is achieved following 1% Z cm.
- the relaxation rate after 10 minutes of this induced absorption is less than 1/2, especially 1/5 at the same time.
- the synthetic quartz glass optical member of the present invention has excellent ultraviolet light resistance.
- a method for producing a synthetic quartz glass optical member according to the present invention wherein the porous base material obtained by the gas phase synthesis method is made transparent by removing H groups and fluorine in a heating atmosphere.
- the first step of obtaining a preformed base material and the base material obtained in the first step A second step of heat molding at 0 ° C. or more to make it transparent, and a third step of quenching from the second step to about 110 ° C. at a temperature lowering rate of 100 ° C./hour or more, A fourth step of slowing down to a temperature of about 700 ° C. at a temperature lowering rate of 100 ° C./hour or lower than the temperature lowering rate of the third step, and a method of manufacturing a synthetic quartz glass optical member.
- the concentration of reduced type defects of ⁇ S i -S i, and indirectly —F concentration and OH group concentration are important factors, and these concentration distributions are important to improve the homogeneity of the transmittance, and sufficient fluorine is required to improve the UV resistance.
- the Si-F concentration should be 0.5 wt% or more and 3.0 ⁇ ⁇ 7% or less (0.5 wt% to 3.0 wt%).
- the 0H group concentration is in the range of 1 ppb to 10 ppm (1 ppb to 10 ppm).
- Si—F concentration means the concentration (weight by ppm) of F (fluorine) bound to Si.
- the fluorine is contained in the synthetic quartz glass optical member to form three Si—F bonds.
- reduced defects of three Si—Si three are suppressed.
- the absorption around 160 nm increases, so the effect is large when using a light source in the wavelength region of 190 nm or less, such as an F 2 laser. This is not desirable.
- the ⁇ S i-F bond has a higher binding energy than the S i- 0- S i basic structure, the stability to ultraviolet irradiation can be improved, and the synthetic quartz glass optical member contains fluorine. By doing so, the effect of reducing the induced absorption in the case where E 'sensor is generated by UV irradiation can be expected. Therefore, when the Si—F concentration is less than 0.5 wt%, reduced defects of the three Si—Si 3 types are liable to occur, and the resulting E ′ sensation is also likely to be induced. The transmittance in the wavelength region around 160 nm is reduced, and the effect of reducing induced absorption is small, and the UV resistance is deteriorated.
- the Si—F concentration exceeds 3.0% by weight, the distribution of the Si—F concentration of the synthetic quartz glass optical member tends to be non-uniform, and the in-plane distribution of the light transmitting surface becomes large, and the homogeneity increases. Worsens and is not preferred.
- the OH group concentration is set in the range of 1 ppb to 1 Oppm in the range of the Si—F concentration as described above, so that the OH group is present in the synthetic quartz glass optical member. This suppresses the generation of reduced Si 3 -S 3 defects.
- the action of suppressing the reducing defects by the 0 H group is indispensable, and it is not preferable to reduce the 0 H group concentration to less than 1 ppb.
- the OH group concentration is less than 1 ppb, three Si—Si three reduced defects are likely to be generated, and if these defects are suppressed by fluorine, a large amount of fluorine is required, and Si— This can be done because the F concentration becomes excessive.
- the OH group concentration needs to be 10 ppm or less, and if it is larger than that, the absorption of the wavelength around 160 nm of the 0 H group itself becomes remarkable. This is not preferable because the in-plane distribution of the light transmitting surface is likely to be large.
- the induced absorption is reduced in a state where the reduction type defects are sufficiently suppressed by setting the Si—F concentration and the OH group concentration in the predetermined ranges as described above.
- the hydrogen molecule concentration in order to moderate the relaxation There are, are in the range of 1 X 10 16 atoms of hydrogen molecule concentration / cm 3 or more 5 X 10 17 atoms / cm 3 or less (1 X 1 0 16 atoms / cm 3 ⁇ 5x1 0 17 atoms / cm 3).
- a relaxation effect of induced absorption caused by reduced defects is obtained.However, by relaxing this relaxation effect to an appropriate degree for synthetic quartz glass in which reduced defects are reduced, the relaxation effect is reduced.
- the transmittance it is possible to keep the transmittance small, and to reduce the fluctuation range of the transmittance after UV irradiation. If the hydrogen molecule concentration is less than 1 ⁇ 10 16 Zcm 3 , the effect of relaxing the induced absorption is insufficient, and the ultraviolet light resistance is lowered, which is not preferable. On the other hand, when the hydrogen molecule concentration exceeds 5 ⁇ 10 17 atoms / cm 3 , the relaxation effect of the induced absorption becomes too strong, and the relaxation rate becomes large.
- the reduced transmittance during ultraviolet light irradiation and the ultraviolet irradiation The difference between the restored transmittance and the difference between the restored transmittance and the transmittance after the ultraviolet irradiation again, such as the difference between the restored transmittance and the transmittance after ultraviolet irradiation, is not preferable because the fluctuation width of the transmittance due to the ultraviolet light irradiation becomes large.
- the in-plane distribution of the light transmitting surface of the optical member having the hydrogen molecule concentration is large, and the homogeneity tends to be reduced.
- the relaxation rate is, for example, the ratio of the amount of decrease due to irradiation when the synthetic silica glass optical member is irradiated with ultraviolet light to the amount of recovery after 10 minutes from the end of irradiation, and the transmittance at the start of irradiation.
- T 0 the transmittance in the irradiation end T a, when the transparently ratio of the elapse end of irradiation after 1 0 minutes and T b, expressed in (T b -T a) / ( T.- T a).
- the relaxation rate is small, the difference between the transmittance that has decreased over time during ultraviolet light irradiation and the transmittance that has recovered after irradiation with ultraviolet light can be reduced, and IC palms and SIs can be manufactured using optical lithography equipment. Quality is more easily stabilized.
- the internal transmittance of the F 2 laser (wavelength 157.6 nm) can be increased by 90% per 1/4 inch. %, And a high ultraviolet transmittance in a wide wavelength region, particularly in a wavelength region of 190 nm or less.
- the internal transparency To achieve an excess ratio of 95% or more per 1/4 inch, it is possible to make the OH group concentration 1 ppm or less and the Si-F concentration 1.5 wt% or more.
- an F 2 laser (wavelength 157.6 nm) with an in-plane distribution of the internal transmittance of the light transmitting surface within 0.5% of soil can be obtained, and high ultraviolet light can be obtained. Uniformity of transmittance can be achieved.
- the “ 2 laser (wavelength 1) with an energy density of 0.1 to 10 mJ / cm 2 / pulse. 57.
- the Si—F concentration is 0.5 wt% to 3.0 wt%
- the OH group concentration is 1 ppb to 10 ppm
- the hydrogen molecule concentration is 1 ⁇ 1.
- the illumination optical system of the optical lithographic device using a light source 1 90n m or less in the wavelength region of the F 2 laser or the like, or a lens member and a projection optical system it is possible to use as a reticle substrate, moreover In addition, variations in quality can be suppressed when manufacturing ICs and LSIs.
- this synthetic quartz glass optical member it is possible to make the refractive index homogeneity within ⁇ 0.25%.
- the distribution of Si-Si concentration is directly reduced to 1 X 10 It is preferably 15 / cc or less.
- the 0H group concentration should be 1 ppm or less.
- the Si—F concentration distribution be within 0.1 wt%.
- the synthetic quartz glass optical member of the present invention as described above can be manufactured as follows.
- a silicon compound and a combustion gas are jetted into a synthesis furnace, and the silicon compound is hydrolyzed in a flame to generate fine glass particles, which are deposited on a substrate.
- a porous base material having an ingot diameter of 150 mm to 600 mm is formed.
- the silicon compound and the combustion gas those generally used in a gas phase synthesis method can be appropriately used.
- silicon compounds such as silicon halides such as silicon tetrachloride;
- alkoxysilanes such as tetramethoxysilane, alkylalkoxysilanes such as methyltrimethoxysilane, and siloxanes such as hexamethyldisiloxane.
- the combustion gas includes oxyhydrogen gas.
- this porous preform for example, C 1 2, SOC 1 2 such as a halogen-containing inert gas atmosphere of a mixed gas of an inert gas such as halogen gas and H e in the, 9 0 0 ° C
- concentration of 0H group is adjusted by performing a heat treatment to about 130 ° C. and performing a dehydration treatment.
- a fluorine-containing gas atmosphere such as F 2 or Si F 4
- a fluorine treatment is performed by heating to about 700 ° C. to 150 ° C., and fluorine is doped to obtain Si. —Generate F.
- the porous base material is heated at a temperature of at least 160 ° C. or more in an atmosphere of the fluorine treatment. Heating is carried out, and if necessary, molding is carried out to make it transparent.
- the structural temperature it is necessary to lower the structural temperature to 10000 K or lower in order to stabilize the basic structure of the synthetic quartz glass optical member. Need to hold for more than 1 minute.
- the ingot diameter is set to 50 mm to 200 mm.
- it is rapidly cooled to about 110 ° C. from the temperature of the transparency treatment in the second step at a rate of 100 ° C.Z or more.
- the rate may decrease.
- the temperature is gradually lowered from about 110 ° C. to about 700 ° C. at a rate of 100 ° C./hour or less, which is slower than the rate of cooling during the rapid cooling in the third step.
- a synthetic quartz glass optical member is obtained.
- the hydrogen molecule concentration of the obtained synthetic quartz glass optical member was measured, and when the hydrogen molecule concentration was less than 1 ⁇ 10 16 / cm 3 , hydrogen treatment was performed to obtain 5 ⁇ 10 1 Hydrogen molecules are introduced in a range of 7 / cm 3 or less.
- the base material is maintained in a temperature range of, for example, 200 ° C. to 600 ° C. in a hydrogen-containing atmosphere to dissolve hydrogen molecules from a surface in contact with the hydrogen-containing atmosphere. Furthermore, it can be performed by diffusing this hydrogen molecule to the inside.
- the synthetic quartz glass is exposed to a high temperature of 1200 ° C. or higher, there is a possibility that the surface layer may be altered or a change due to a chemical reaction inside the glass may occur. For this reason, it is desirable that the total time of exposure to a temperature of 1200 ° C. or higher in the period after the third step be within 10 hours.
- the Si—F concentration, the OH group concentration, and the hydrogen molecule concentration of the blocks of Examples 1 to 5 and Comparative Examples 1 to 4 were measured.
- the OH group concentration was calculated from the absorption peak at 1.38 ⁇ measured with an infrared spectrophotometer (IR).
- IR infrared spectrophotometer
- the Si_F concentration was measured using ion chromatography or a laser Raman spectrometer using an Ar ion laser as a light source. Here, the measurement was made on the assumption that the amount of fluorine existing in other forms was extremely small.
- the hydrogen molecule concentration using laser Raman spectrometer that a light source A r ion laser (trade name "NR 1 800", manufactured by JASCO Corporation) and, 800 c m_ represents a fundamental vibration of the quartz glass 1
- the ratio was calculated from the ratio of the peak of to the peak of 41 35 cm- 1 representing the stretching vibration of hydrogen molecules.
- the internal transmittance, the in-plane distribution of the transmittance, and the relaxation rate were measured.
- 0. 1 m J / cm 2 / pu 1 F 2 lasers se of energy density (wavelength 1 57.
- short-wavelength ultraviolet light in particular 1 57. shows a high UV transmittance to the oscillation wavelength of F 2 laser of 6 nm near, yet is sufficiently high homogeneity of transmittance and the transmittance with respect to "2, single THE It has excellent resistance to ultraviolet light because of its low rate of decrease, and is therefore used in applications where short-wavelength ultraviolet light is used as a light source, especially for illumination optics in optical lithography equipment and optical devices such as lenses used in projection optics. It is extremely useful as an element material.
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Cited By (3)
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JP2009013048A (ja) * | 2007-06-06 | 2009-01-22 | Shin Etsu Chem Co Ltd | ナノインプリントモールド用チタニアドープ石英ガラス |
EP1735249B1 (en) * | 2004-02-23 | 2011-07-27 | Corning Incorporated | Synthetic silica glass optical material and method of producing it |
JP2018140922A (ja) * | 2016-06-03 | 2018-09-13 | クアーズテック株式会社 | シリカガラス部材 |
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EP1125897A1 (en) * | 1999-06-10 | 2001-08-22 | Asahi Glass Company Ltd. | Synthetic quartz glass and method for preparing the same |
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JP2861512B2 (ja) * | 1991-07-24 | 1999-02-24 | 旭硝子株式会社 | 石英ガラス光学部材の製造方法 |
JP3125630B2 (ja) * | 1994-07-07 | 2001-01-22 | 株式会社ニコン | 真空紫外用石英ガラスの製造方法および石英ガラス光学部材 |
JP2002316831A (ja) * | 2001-04-20 | 2002-10-31 | Sumitomo Electric Ind Ltd | フッ素添加石英ガラス |
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- 2004-01-21 JP JP2005508101A patent/JPWO2004065315A1/ja active Pending
- 2004-01-21 WO PCT/JP2004/000467 patent/WO2004065315A1/ja active Application Filing
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WO2000055689A1 (en) * | 1999-03-15 | 2000-09-21 | Corning Incorporated | Projection lithography photomask blanks, preforms and method of making |
EP1125897A1 (en) * | 1999-06-10 | 2001-08-22 | Asahi Glass Company Ltd. | Synthetic quartz glass and method for preparing the same |
JP2001322820A (ja) * | 2000-03-06 | 2001-11-20 | Shin Etsu Chem Co Ltd | フッ素含有合成石英ガラス及びその製造方法 |
EP1188723A1 (en) * | 2000-08-18 | 2002-03-20 | Shin-Etsu Chemical Co., Ltd. | Synthetic quartz glass and method of production |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1735249B1 (en) * | 2004-02-23 | 2011-07-27 | Corning Incorporated | Synthetic silica glass optical material and method of producing it |
JP2009013048A (ja) * | 2007-06-06 | 2009-01-22 | Shin Etsu Chem Co Ltd | ナノインプリントモールド用チタニアドープ石英ガラス |
JP2018140922A (ja) * | 2016-06-03 | 2018-09-13 | クアーズテック株式会社 | シリカガラス部材 |
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