WO2004051749A1 - Structure et procede de lubistor lateral - Google Patents

Structure et procede de lubistor lateral Download PDF

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Publication number
WO2004051749A1
WO2004051749A1 PCT/US2002/038546 US0238546W WO2004051749A1 WO 2004051749 A1 WO2004051749 A1 WO 2004051749A1 US 0238546 W US0238546 W US 0238546W WO 2004051749 A1 WO2004051749 A1 WO 2004051749A1
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WO
WIPO (PCT)
Prior art keywords
fin
gate
doped
electrode
esd
Prior art date
Application number
PCT/US2002/038546
Other languages
English (en)
Inventor
Jack Mandelman
Steven H. Voldman
Original Assignee
International Business Machines Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corporation filed Critical International Business Machines Corporation
Priority to JP2004557083A priority Critical patent/JP2006522460A/ja
Priority to PCT/US2002/038546 priority patent/WO2004051749A1/fr
Priority to EP02786852A priority patent/EP1599904A4/fr
Priority to CNB028299787A priority patent/CN100459119C/zh
Priority to AU2002351206A priority patent/AU2002351206A1/en
Publication of WO2004051749A1 publication Critical patent/WO2004051749A1/fr
Priority to US10/908,961 priority patent/US7173310B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L2029/7857—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET of the accumulation type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys

Abstract

L'invention concerne une structure de LUBISTOR à décharge électrostatique basée sur une technologie FINFET utilisant une dérive (50) (un élément vertical fin contenant la source, le drain et le corps du dispositif) avec ou sans porte (60) suivant le mode de réalisation. La porte (60) peut être connectée à une électrode externe (51) laquelle est protégée en vue de produire un dispositif à activation automatique ou peut être connectée à une tension de référence (92). Le dispositif peut être utilisé dans des circuits numériques ou analogiques.
PCT/US2002/038546 2002-12-03 2002-12-03 Structure et procede de lubistor lateral WO2004051749A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004557083A JP2006522460A (ja) 2002-12-03 2002-12-03 横型ルビスター構造（ｌａｔｅｒａｌｌｕｂｉｓｔｏｒｓｔｒｕｃｔｕｒｅ）および形成方法
PCT/US2002/038546 WO2004051749A1 (fr) 2002-12-03 2002-12-03 Structure et procede de lubistor lateral
EP02786852A EP1599904A4 (fr) 2002-12-03 2002-12-03 Structure et procede de lubistor lateral
CNB028299787A CN100459119C (zh) 2002-12-03 2002-12-03 横向lubistor结构和方法
AU2002351206A AU2002351206A1 (en) 2002-12-03 2002-12-03 Lateral lubistor structure and method
US10/908,961 US7173310B2 (en) 2002-12-03 2005-06-02 Lateral lubistor structure and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/038546 WO2004051749A1 (fr) 2002-12-03 2002-12-03 Structure et procede de lubistor lateral

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/908,961 Continuation US7173310B2 (en) 2002-12-03 2005-06-02 Lateral lubistor structure and method

Publications (1)

Publication Number Publication Date
WO2004051749A1 true WO2004051749A1 (fr) 2004-06-17

Family

ID=32467120

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/038546 WO2004051749A1 (fr) 2002-12-03 2002-12-03 Structure et procede de lubistor lateral

Country Status (5)

Country Link
EP (1) EP1599904A4 (fr)
JP (1) JP2006522460A (fr)
CN (1) CN100459119C (fr)
AU (1) AU2002351206A1 (fr)
WO (1) WO2004051749A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005007822A1 (de) * 2005-02-21 2006-08-31 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Feldeffekttransistor, insbesondere mit Tunnel-Feldeffekttransistor
DE102005022763A1 (de) * 2005-05-18 2006-11-23 Infineon Technologies Ag Elektronischer Schaltkreis, elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises
DE102005039365A1 (de) * 2005-08-19 2007-02-22 Infineon Technologies Ag Gate-gesteuertes Fin-Widerstandselement zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis
DE102006022105A1 (de) * 2006-05-11 2007-11-15 Infineon Technologies Ag ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis
DE102006023429A1 (de) * 2006-05-18 2007-11-22 Infineon Technologies Ag ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis, Verfahren zum Herstellen eines ESD-Schutz-Elementes
EP2070110A2 (fr) * 2006-09-15 2009-06-17 International Business Machines Corporation Transistor à effet de champ avec attaches d'ailette source/drain élevées
WO2014056909A1 (fr) * 2012-10-08 2014-04-17 Intel Mobile Communications GmbH Dispositif de redresseur commandé au silicium (scr) pour une technologie finfet de substrat
US9368629B2 (en) 2012-11-29 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Diode structure compatible with FinFET process

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100449783C (zh) * 2005-11-29 2009-01-07 台湾积体电路制造股份有限公司 具有体接触窗的鳍状场效应晶体管及其制造方法
EP2117045A1 (fr) * 2008-05-09 2009-11-11 Imec Méthodologie de conception pour dispositifs de protection MuGFET contre les décharges éléctrostatiques ESD
US8232603B2 (en) * 2009-03-19 2012-07-31 International Business Machines Corporation Gated diode structure and method including relaxed liner
CN102683418B (zh) * 2012-05-22 2014-11-26 清华大学 一种finfet动态随机存储器单元及其制备方法
US9209265B2 (en) * 2012-11-15 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. ESD devices comprising semiconductor fins
CN104124153B (zh) * 2013-04-28 2016-08-31 中芯国际集成电路制造(上海)有限公司 鳍式双极结型晶体管及其形成方法
US9601607B2 (en) * 2013-11-27 2017-03-21 Qualcomm Incorporated Dual mode transistor
CN107369710B (zh) * 2016-05-12 2020-06-09 中芯国际集成电路制造(上海)有限公司 栅控二极管及其形成方法
CN107492569B (zh) * 2016-06-12 2020-02-07 中芯国际集成电路制造(上海)有限公司 栅控二极管及其形成方法

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US5610790A (en) * 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture

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US4282556A (en) * 1979-05-21 1981-08-04 Rca Corporation Input protection device for insulated gate field effect transistor
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Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005007822B4 (de) * 2005-02-21 2014-05-22 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Tunnel-Feldeffekttransistor
US8629500B2 (en) 2005-02-21 2014-01-14 Infineon Technologies Ag Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor
US9219063B2 (en) 2005-02-21 2015-12-22 Infineon Technologies Ag Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor
DE102005007822A1 (de) * 2005-02-21 2006-08-31 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Feldeffekttransistor, insbesondere mit Tunnel-Feldeffekttransistor
DE102005022763A1 (de) * 2005-05-18 2006-11-23 Infineon Technologies Ag Elektronischer Schaltkreis, elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises
US8085518B2 (en) 2005-05-18 2011-12-27 Infineon Technologies Ag Electronic circuit, electronic circuit arrangement and method for producing an electronic circuit
DE102005022763B4 (de) * 2005-05-18 2018-02-01 Infineon Technologies Ag Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises
JP4621182B2 (ja) * 2005-08-19 2011-01-26 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 電気回路中にて静電気放電保護素子として用いるためのゲート制御されたフィン型抵抗素子
JP2011040768A (ja) * 2005-08-19 2011-02-24 Infineon Technologies Ag 電気回路中にて静電気放電保護素子として用いるためのゲート制御されたフィン型抵抗素子、および、電気回路内部を静電気放電から保護するための保護装置
JP2007053387A (ja) * 2005-08-19 2007-03-01 Infineon Technologies Ag 電気回路中にて静電気放電保護素子として用いるためのゲート制御されたフィン型抵抗素子、および、電気回路内部を静電気放電から保護するための保護装置
US7919816B2 (en) 2005-08-19 2011-04-05 Infineon Technologies Ag Electrostatic discharge protection element
DE102005039365A1 (de) * 2005-08-19 2007-02-22 Infineon Technologies Ag Gate-gesteuertes Fin-Widerstandselement zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis
DE102005039365B4 (de) 2005-08-19 2022-02-10 Infineon Technologies Ag Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis
US8476711B2 (en) 2005-08-19 2013-07-02 Infineon Technologies Ag System for protection against electrostatic discharges in an electrical circuit
DE102006022105A1 (de) * 2006-05-11 2007-11-15 Infineon Technologies Ag ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis
DE102006022105B4 (de) * 2006-05-11 2012-03-08 Infineon Technologies Ag ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis
US8455949B2 (en) 2006-05-11 2013-06-04 Infineon Technologies Ag ESD protection element and ESD protection device for use in an electrical circuit
DE102006023429A1 (de) * 2006-05-18 2007-11-22 Infineon Technologies Ag ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis, Verfahren zum Herstellen eines ESD-Schutz-Elementes
DE102006023429B4 (de) * 2006-05-18 2011-03-10 Infineon Technologies Ag ESD-Schutz-Element zur Verwendung in einem elektrischen Schaltkreis
US7838939B2 (en) 2006-05-18 2010-11-23 Infineon Technologies Ag ESD protection element
EP2070110A2 (fr) * 2006-09-15 2009-06-17 International Business Machines Corporation Transistor à effet de champ avec attaches d'ailette source/drain élevées
EP2070110A4 (fr) * 2006-09-15 2012-01-25 Ibm Transistor à effet de champ avec attaches d'ailette source/drain élevées
US8785968B2 (en) 2012-10-08 2014-07-22 Intel Mobile Communications GmbH Silicon controlled rectifier (SCR) device for bulk FinFET technology
WO2014056909A1 (fr) * 2012-10-08 2014-04-17 Intel Mobile Communications GmbH Dispositif de redresseur commandé au silicium (scr) pour une technologie finfet de substrat
US9368629B2 (en) 2012-11-29 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Diode structure compatible with FinFET process
US9601627B2 (en) 2012-11-29 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Diode structure compatible with FinFET process

Also Published As

Publication number Publication date
EP1599904A4 (fr) 2006-04-26
CN100459119C (zh) 2009-02-04
EP1599904A1 (fr) 2005-11-30
CN1695245A (zh) 2005-11-09
AU2002351206A1 (en) 2004-06-23
JP2006522460A (ja) 2006-09-28

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