JP2006522460A - 横型ルビスター構造(laterallubistorstructure)および形成方法 - Google Patents
横型ルビスター構造(laterallubistorstructure)および形成方法 Download PDFInfo
- Publication number
- JP2006522460A JP2006522460A JP2004557083A JP2004557083A JP2006522460A JP 2006522460 A JP2006522460 A JP 2006522460A JP 2004557083 A JP2004557083 A JP 2004557083A JP 2004557083 A JP2004557083 A JP 2004557083A JP 2006522460 A JP2006522460 A JP 2006522460A
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- fin
- electrode
- gate
- doped
- diode
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- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims description 16
- 239000012212 insulator Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000007943 implant Substances 0.000 description 9
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- 125000001475 halogen functional group Chemical group 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 210000000746 body region Anatomy 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910010380 TiNi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
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- 239000002313 adhesive film Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
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- 238000007667 floating Methods 0.000 description 1
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- 230000036039 immunity Effects 0.000 description 1
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- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L2029/7857—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET of the accumulation type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2002/038546 WO2004051749A1 (fr) | 2002-12-03 | 2002-12-03 | Structure et procede de lubistor lateral |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006522460A true JP2006522460A (ja) | 2006-09-28 |
Family
ID=32467120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004557083A Pending JP2006522460A (ja) | 2002-12-03 | 2002-12-03 | 横型ルビスター構造(laterallubistorstructure)および形成方法 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1599904A4 (fr) |
JP (1) | JP2006522460A (fr) |
CN (1) | CN100459119C (fr) |
AU (1) | AU2002351206A1 (fr) |
WO (1) | WO2004051749A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009283934A (ja) * | 2008-05-09 | 2009-12-03 | Imec | MuGFETのESD保護デバイスの設計手法 |
JP2012521091A (ja) * | 2009-03-19 | 2012-09-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ゲート・ダイオード構造及びゲート・ダイオード構造の製造方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005007822B4 (de) | 2005-02-21 | 2014-05-22 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Tunnel-Feldeffekttransistor |
DE102005022763B4 (de) * | 2005-05-18 | 2018-02-01 | Infineon Technologies Ag | Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises |
DE102005039365B4 (de) * | 2005-08-19 | 2022-02-10 | Infineon Technologies Ag | Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis |
CN100449783C (zh) * | 2005-11-29 | 2009-01-07 | 台湾积体电路制造股份有限公司 | 具有体接触窗的鳍状场效应晶体管及其制造方法 |
DE102006022105B4 (de) | 2006-05-11 | 2012-03-08 | Infineon Technologies Ag | ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis |
DE102006023429B4 (de) | 2006-05-18 | 2011-03-10 | Infineon Technologies Ag | ESD-Schutz-Element zur Verwendung in einem elektrischen Schaltkreis |
US7456471B2 (en) * | 2006-09-15 | 2008-11-25 | International Business Machines Corporation | Field effect transistor with raised source/drain fin straps |
CN102683418B (zh) * | 2012-05-22 | 2014-11-26 | 清华大学 | 一种finfet动态随机存储器单元及其制备方法 |
US8785968B2 (en) * | 2012-10-08 | 2014-07-22 | Intel Mobile Communications GmbH | Silicon controlled rectifier (SCR) device for bulk FinFET technology |
US9209265B2 (en) * | 2012-11-15 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD devices comprising semiconductor fins |
US9093492B2 (en) | 2012-11-29 | 2015-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode structure compatible with FinFET process |
CN104124153B (zh) * | 2013-04-28 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | 鳍式双极结型晶体管及其形成方法 |
US9601607B2 (en) * | 2013-11-27 | 2017-03-21 | Qualcomm Incorporated | Dual mode transistor |
CN107369710B (zh) * | 2016-05-12 | 2020-06-09 | 中芯国际集成电路制造(上海)有限公司 | 栅控二极管及其形成方法 |
CN107492569B (zh) * | 2016-06-12 | 2020-02-07 | 中芯国际集成电路制造(上海)有限公司 | 栅控二极管及其形成方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4037140A (en) * | 1976-04-14 | 1977-07-19 | Rca Corporation | Protection circuit for insulated-gate field-effect transistors (IGFETS) |
US4282556A (en) * | 1979-05-21 | 1981-08-04 | Rca Corporation | Input protection device for insulated gate field effect transistor |
JPH0425175A (ja) * | 1990-05-21 | 1992-01-28 | Canon Inc | ダイオード |
US5610790A (en) * | 1995-01-20 | 1997-03-11 | Xilinx, Inc. | Method and structure for providing ESD protection for silicon on insulator integrated circuits |
JPH10125801A (ja) * | 1996-09-06 | 1998-05-15 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US5952695A (en) * | 1997-03-05 | 1999-09-14 | International Business Machines Corporation | Silicon-on-insulator and CMOS-on-SOI double film structures |
US6413802B1 (en) * | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
US6894324B2 (en) * | 2001-02-15 | 2005-05-17 | United Microelectronics Corp. | Silicon-on-insulator diodes and ESD protection circuits |
-
2002
- 2002-12-03 JP JP2004557083A patent/JP2006522460A/ja active Pending
- 2002-12-03 CN CNB028299787A patent/CN100459119C/zh not_active Expired - Lifetime
- 2002-12-03 EP EP02786852A patent/EP1599904A4/fr not_active Ceased
- 2002-12-03 WO PCT/US2002/038546 patent/WO2004051749A1/fr active Application Filing
- 2002-12-03 AU AU2002351206A patent/AU2002351206A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009283934A (ja) * | 2008-05-09 | 2009-12-03 | Imec | MuGFETのESD保護デバイスの設計手法 |
JP2012521091A (ja) * | 2009-03-19 | 2012-09-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ゲート・ダイオード構造及びゲート・ダイオード構造の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1599904A4 (fr) | 2006-04-26 |
WO2004051749A1 (fr) | 2004-06-17 |
CN1695245A (zh) | 2005-11-09 |
EP1599904A1 (fr) | 2005-11-30 |
CN100459119C (zh) | 2009-02-04 |
AU2002351206A1 (en) | 2004-06-23 |
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