JP2006522460A - 横型ルビスター構造（ｌａｔｅｒａｌｌｕｂｉｓｔｏｒｓｔｒｕｃｔｕｒｅ）および形成方法 - Google Patents

横型ルビスター構造（ｌａｔｅｒａｌｌｕｂｉｓｔｏｒｓｔｒｕｃｔｕｒｅ）および形成方法 Download PDF

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JP2006522460A
JP2006522460A JP2004557083A JP2004557083A JP2006522460A JP 2006522460 A JP2006522460 A JP 2006522460A JP 2004557083 A JP2004557083 A JP 2004557083A JP 2004557083 A JP2004557083 A JP 2004557083A JP 2006522460 A JP2006522460 A JP 2006522460A
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Prior art keywords
fin
electrode
gate
doped
diode
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Pending
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JP2004557083A
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English (en)
Japanese (ja)
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マンデルマン、ジャック
ヴォルドマン、ステイヴィン、エイチ
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L2029/7857—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET of the accumulation type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
JP2004557083A 2002-12-03 2002-12-03 横型ルビスター構造（ｌａｔｅｒａｌｌｕｂｉｓｔｏｒｓｔｒｕｃｔｕｒｅ）および形成方法 Pending JP2006522460A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/038546 WO2004051749A1 (fr) 2002-12-03 2002-12-03 Structure et procede de lubistor lateral

Publications (1)

Publication Number Publication Date
JP2006522460A true JP2006522460A (ja) 2006-09-28

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ID=32467120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004557083A Pending JP2006522460A (ja) 2002-12-03 2002-12-03 横型ルビスター構造（ｌａｔｅｒａｌｌｕｂｉｓｔｏｒｓｔｒｕｃｔｕｒｅ）および形成方法

Country Status (5)

Country Link
EP (1) EP1599904A4 (fr)
JP (1) JP2006522460A (fr)
CN (1) CN100459119C (fr)
AU (1) AU2002351206A1 (fr)
WO (1) WO2004051749A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283934A (ja) * 2008-05-09 2009-12-03 Imec ＭｕＧＦＥＴのＥＳＤ保護デバイスの設計手法
JP2012521091A (ja) * 2009-03-19 2012-09-10 インターナショナル・ビジネス・マシーンズ・コーポレーション ゲート・ダイオード構造及びゲート・ダイオード構造の製造方法

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* Cited by examiner, † Cited by third party
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DE102005007822B4 (de) 2005-02-21 2014-05-22 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Tunnel-Feldeffekttransistor
DE102005022763B4 (de) 2005-05-18 2018-02-01 Infineon Technologies Ag Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises
DE102005039365B4 (de) * 2005-08-19 2022-02-10 Infineon Technologies Ag Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis
CN100449783C (zh) * 2005-11-29 2009-01-07 台湾积体电路制造股份有限公司 具有体接触窗的鳍状场效应晶体管及其制造方法
DE102006022105B4 (de) * 2006-05-11 2012-03-08 Infineon Technologies Ag ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis
DE102006023429B4 (de) * 2006-05-18 2011-03-10 Infineon Technologies Ag ESD-Schutz-Element zur Verwendung in einem elektrischen Schaltkreis
US7456471B2 (en) * 2006-09-15 2008-11-25 International Business Machines Corporation Field effect transistor with raised source/drain fin straps
CN102683418B (zh) * 2012-05-22 2014-11-26 清华大学 一种finfet动态随机存储器单元及其制备方法
US8785968B2 (en) * 2012-10-08 2014-07-22 Intel Mobile Communications GmbH Silicon controlled rectifier (SCR) device for bulk FinFET technology
US9209265B2 (en) * 2012-11-15 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. ESD devices comprising semiconductor fins
US9093492B2 (en) * 2012-11-29 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Diode structure compatible with FinFET process
CN104124153B (zh) * 2013-04-28 2016-08-31 中芯国际集成电路制造(上海)有限公司 鳍式双极结型晶体管及其形成方法
US9601607B2 (en) * 2013-11-27 2017-03-21 Qualcomm Incorporated Dual mode transistor
CN107369710B (zh) * 2016-05-12 2020-06-09 中芯国际集成电路制造(上海)有限公司 栅控二极管及其形成方法
CN107492569B (zh) * 2016-06-12 2020-02-07 中芯国际集成电路制造(上海)有限公司 栅控二极管及其形成方法

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US4037140A (en) * 1976-04-14 1977-07-19 Rca Corporation Protection circuit for insulated-gate field-effect transistors (IGFETS)
US4282556A (en) * 1979-05-21 1981-08-04 Rca Corporation Input protection device for insulated gate field effect transistor
JPH0425175A (ja) * 1990-05-21 1992-01-28 Canon Inc ダイオード
US5610790A (en) * 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
JPH10125801A (ja) * 1996-09-06 1998-05-15 Mitsubishi Electric Corp 半導体集積回路装置
US5952695A (en) * 1997-03-05 1999-09-14 International Business Machines Corporation Silicon-on-insulator and CMOS-on-SOI double film structures
US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
US6894324B2 (en) * 2001-02-15 2005-05-17 United Microelectronics Corp. Silicon-on-insulator diodes and ESD protection circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283934A (ja) * 2008-05-09 2009-12-03 Imec ＭｕＧＦＥＴのＥＳＤ保護デバイスの設計手法
JP2012521091A (ja) * 2009-03-19 2012-09-10 インターナショナル・ビジネス・マシーンズ・コーポレーション ゲート・ダイオード構造及びゲート・ダイオード構造の製造方法

Also Published As

Publication number Publication date
EP1599904A4 (fr) 2006-04-26
CN100459119C (zh) 2009-02-04
EP1599904A1 (fr) 2005-11-30
CN1695245A (zh) 2005-11-09
WO2004051749A1 (fr) 2004-06-17
AU2002351206A1 (en) 2004-06-23

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