EP1599904A4 - Structure et procede de lubistor lateral - Google Patents
Structure et procede de lubistor lateralInfo
- Publication number
- EP1599904A4 EP1599904A4 EP02786852A EP02786852A EP1599904A4 EP 1599904 A4 EP1599904 A4 EP 1599904A4 EP 02786852 A EP02786852 A EP 02786852A EP 02786852 A EP02786852 A EP 02786852A EP 1599904 A4 EP1599904 A4 EP 1599904A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- lateral
- lubistor
- lubistor structure
- lateral lubistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L2029/7857—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET of the accumulation type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2002/038546 WO2004051749A1 (fr) | 2002-12-03 | 2002-12-03 | Structure et procede de lubistor lateral |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1599904A1 EP1599904A1 (fr) | 2005-11-30 |
EP1599904A4 true EP1599904A4 (fr) | 2006-04-26 |
Family
ID=32467120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02786852A Ceased EP1599904A4 (fr) | 2002-12-03 | 2002-12-03 | Structure et procede de lubistor lateral |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1599904A4 (fr) |
JP (1) | JP2006522460A (fr) |
CN (1) | CN100459119C (fr) |
AU (1) | AU2002351206A1 (fr) |
WO (1) | WO2004051749A1 (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005007822B4 (de) * | 2005-02-21 | 2014-05-22 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Tunnel-Feldeffekttransistor |
DE102005022763B4 (de) * | 2005-05-18 | 2018-02-01 | Infineon Technologies Ag | Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises |
DE102005039365B4 (de) * | 2005-08-19 | 2022-02-10 | Infineon Technologies Ag | Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis |
CN100449783C (zh) * | 2005-11-29 | 2009-01-07 | 台湾积体电路制造股份有限公司 | 具有体接触窗的鳍状场效应晶体管及其制造方法 |
DE102006022105B4 (de) | 2006-05-11 | 2012-03-08 | Infineon Technologies Ag | ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis |
DE102006023429B4 (de) | 2006-05-18 | 2011-03-10 | Infineon Technologies Ag | ESD-Schutz-Element zur Verwendung in einem elektrischen Schaltkreis |
US7456471B2 (en) * | 2006-09-15 | 2008-11-25 | International Business Machines Corporation | Field effect transistor with raised source/drain fin straps |
EP2117045A1 (fr) * | 2008-05-09 | 2009-11-11 | Imec | Méthodologie de conception pour dispositifs de protection MuGFET contre les décharges éléctrostatiques ESD |
US8232603B2 (en) * | 2009-03-19 | 2012-07-31 | International Business Machines Corporation | Gated diode structure and method including relaxed liner |
CN102683418B (zh) * | 2012-05-22 | 2014-11-26 | 清华大学 | 一种finfet动态随机存储器单元及其制备方法 |
US8785968B2 (en) | 2012-10-08 | 2014-07-22 | Intel Mobile Communications GmbH | Silicon controlled rectifier (SCR) device for bulk FinFET technology |
US9209265B2 (en) * | 2012-11-15 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD devices comprising semiconductor fins |
US9093492B2 (en) | 2012-11-29 | 2015-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode structure compatible with FinFET process |
CN104124153B (zh) * | 2013-04-28 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | 鳍式双极结型晶体管及其形成方法 |
US9601607B2 (en) * | 2013-11-27 | 2017-03-21 | Qualcomm Incorporated | Dual mode transistor |
CN107369710B (zh) * | 2016-05-12 | 2020-06-09 | 中芯国际集成电路制造(上海)有限公司 | 栅控二极管及其形成方法 |
CN107492569B (zh) * | 2016-06-12 | 2020-02-07 | 中芯国际集成电路制造(上海)有限公司 | 栅控二极管及其形成方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4037140A (en) * | 1976-04-14 | 1977-07-19 | Rca Corporation | Protection circuit for insulated-gate field-effect transistors (IGFETS) |
US4282556A (en) * | 1979-05-21 | 1981-08-04 | Rca Corporation | Input protection device for insulated gate field effect transistor |
US5616944A (en) * | 1990-05-21 | 1997-04-01 | Canon Kabushiki Kaisha | Diode and semiconductor device having a controlled intrinsic or low impurity concentration region between opposite conductivity type semiconductor regions |
US6096584A (en) * | 1997-03-05 | 2000-08-01 | International Business Machines Corporation | Silicon-on-insulator and CMOS-on-SOI double film fabrication process with a coplanar silicon and isolation layer and adding a second silicon layer on one region |
US6413802B1 (en) * | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
US20020109153A1 (en) * | 2001-02-15 | 2002-08-15 | Ming-Dou Ker | Silicon-on-insulator diodes and ESD protection circuits |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5610790A (en) * | 1995-01-20 | 1997-03-11 | Xilinx, Inc. | Method and structure for providing ESD protection for silicon on insulator integrated circuits |
JPH10125801A (ja) * | 1996-09-06 | 1998-05-15 | Mitsubishi Electric Corp | 半導体集積回路装置 |
-
2002
- 2002-12-03 WO PCT/US2002/038546 patent/WO2004051749A1/fr active Application Filing
- 2002-12-03 EP EP02786852A patent/EP1599904A4/fr not_active Ceased
- 2002-12-03 AU AU2002351206A patent/AU2002351206A1/en not_active Abandoned
- 2002-12-03 CN CNB028299787A patent/CN100459119C/zh not_active Expired - Lifetime
- 2002-12-03 JP JP2004557083A patent/JP2006522460A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4037140A (en) * | 1976-04-14 | 1977-07-19 | Rca Corporation | Protection circuit for insulated-gate field-effect transistors (IGFETS) |
US4282556A (en) * | 1979-05-21 | 1981-08-04 | Rca Corporation | Input protection device for insulated gate field effect transistor |
US5616944A (en) * | 1990-05-21 | 1997-04-01 | Canon Kabushiki Kaisha | Diode and semiconductor device having a controlled intrinsic or low impurity concentration region between opposite conductivity type semiconductor regions |
US6096584A (en) * | 1997-03-05 | 2000-08-01 | International Business Machines Corporation | Silicon-on-insulator and CMOS-on-SOI double film fabrication process with a coplanar silicon and isolation layer and adding a second silicon layer on one region |
US6413802B1 (en) * | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
US20020109153A1 (en) * | 2001-02-15 | 2002-08-15 | Ming-Dou Ker | Silicon-on-insulator diodes and ESD protection circuits |
Non-Patent Citations (2)
Title |
---|
See also references of WO2004051749A1 * |
YASUHISA OMURA: "A lateral, unidirectional, bipolar-type insulated-gate transistor-A novel semiconductor device", APPL. PHYS. LETT., vol. 40, no. 6, 15 March 1982 (1982-03-15), pages 528 - 529, XP002369302 * |
Also Published As
Publication number | Publication date |
---|---|
WO2004051749A1 (fr) | 2004-06-17 |
JP2006522460A (ja) | 2006-09-28 |
CN1695245A (zh) | 2005-11-09 |
CN100459119C (zh) | 2009-02-04 |
EP1599904A1 (fr) | 2005-11-30 |
AU2002351206A1 (en) | 2004-06-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20050701 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO |
|
DAX | Request for extension of the european patent (deleted) | ||
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 27/12 20060101ALI20060228BHEP Ipc: H01L 29/786 20060101ALI20060228BHEP Ipc: H01L 21/336 20060101ALI20060228BHEP Ipc: H01L 27/01 20060101ALI20060228BHEP Ipc: H01L 23/62 20060101ALI20060228BHEP Ipc: H01L 27/02 20060101ALI20060228BHEP Ipc: H01L 29/739 20060101AFI20060228BHEP |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20060313 |
|
17Q | First examination report despatched |
Effective date: 20060720 |
|
17Q | First examination report despatched |
Effective date: 20060720 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED |
|
18R | Application refused |
Effective date: 20101118 |