WO2004051720A1 - プラズマドーピング方法 - Google Patents
プラズマドーピング方法 Download PDFInfo
- Publication number
- WO2004051720A1 WO2004051720A1 PCT/JP2003/014633 JP0314633W WO2004051720A1 WO 2004051720 A1 WO2004051720 A1 WO 2004051720A1 JP 0314633 W JP0314633 W JP 0314633W WO 2004051720 A1 WO2004051720 A1 WO 2004051720A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- substance
- doping method
- mixed
- doped
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000126 substance Substances 0.000 claims abstract description 53
- 239000012535 impurity Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000010790 dilution Methods 0.000 claims abstract description 6
- 239000012895 dilution Substances 0.000 claims abstract description 6
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 229910052756 noble gas Inorganic materials 0.000 claims 1
- 239000002019 doping agent Substances 0.000 abstract description 5
- 238000010494 dissociation reaction Methods 0.000 abstract 1
- 230000005593 dissociations Effects 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 74
- 150000002500 ions Chemical class 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 231100000086 high toxicity Toxicity 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101000962469 Homo sapiens Transcription factor MafF Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 102100039187 Transcription factor MafF Human genes 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
Definitions
- the present invention relates to a method for introducing a substance near a surface of a solid or the like using plasma.
- the reaction Chenpa introducing an 10 silicon ⁇ er Ha 20, the pressure was reduced to base Ichisu vacuum 5xl (r 7 Torr (6.7x10- 5 Pa), in He up to 0.05% introducing the diluted B 2 H 6 gas 30, a state of vacuum 5xl0_ 4 Torr (0.067 Pa). in this state, by introducing a high frequency through the power supply to the ECR plasma source 40 generates a flop plasma 45. next In addition, a high frequency is supplied from an RF power supply 60 to the wafer holder 50 on which the wafer 20 is placed, and a certain voltage is applied between the generated plasma 45 and the silicon wafer 20, and 700 V is applied according to the induction example. As a result, as shown in FIG.
- the purpose of diluting B 2 H 6 with He is an attempt to increase the safety by diluting B 2 H 6, which has extremely high toxicity to the human body, as much as possible.
- B According the partial pressure of H 6 is reduced, including the in B in the plasma And the doping efficiency was significantly reduced.
- He used for the purpose of dilution has a small atomic radius and is adopted because it can be easily diffused and removed to the outside by heat treatment even after it is introduced into silicon, but the ionization energy is high. Therefore, when generating and maintaining the plasma, the state of the plasma could become unstable.
- FIG. 1 is a diagram showing a plasma doping apparatus according to one embodiment of the present invention.
- FIG. 2 is a diagram showing the dependency of the ion current density on the B 2 H 6 gas concentration in one embodiment of the present invention.
- Figure 3 is a diagram showing a B 2 H e gas concentration dependence of the electron temperature in one embodiment of the present invention.
- FIG. 4 is a diagram showing a relationship between a bias voltage application time and a sheet resistance in one embodiment of the present invention.
- FIG. 5A is a diagram showing a conventional plasma doping apparatus.
- FIG. 5B is an enlarged view of region A in FIG. 5A.
- the reason that the plasma doping method of the present invention uses a substance having a higher ionization energy than a substance containing an impurity to be doped as a dog is that plasma doping using a plasma having a high ion current density and an electron temperature becomes possible. It is. Specifically, it is suitable that B 2 H 6 gas is used as a substance containing impurities to be doped, and He is used as a substance having a high ionization energy, and the concentration of B 2 H 6 is less than 0.05%. With the above composition, a plasma having a higher ion current density and an electron temperature can be obtained as a plasma containing B 2 H 6 at a certain pressure. That is, B 2 ion current density and electron temperature according to the concentration is lower in H 6 is increased, B 2 concentration of H 6 is desirable that reach nearly saturated is less than 0.05%.
- the reason why the plasma doping method of the present invention generates plasma of a substance having a smaller ionization energy than that of the substance containing the impurity to be doped and then discharges the substance containing the impurity to be doped This is because the state of the plasma is stabilized when the plasma including the plasma is generated.
- plasma doping can be performed by discharging a substance containing impurities to be doped at a lower pressure than in a case where plasma of a substance with a small energy is not generated in advance. This is because plasma doping becomes possible.
- a plasma having an ion current density of 1.1 mA / cm 2 or more and an electron temperature of 6.0 eV or more at a pressure of about 0.9 Pa can be obtained stably. It is possible to provide a plasma doping method in which the dose can be controlled by changing the time for applying the bias voltage using such plasma. The advantage is that even when the absolute value of the bias voltage is small, the dose can be easily controlled while securing the throughput required industrially, and deposition is less likely to occur.
- the substance containing impurities to be doped is B 2 H 6 , and He is used for dilution.
- the degree of dilution with He is n (%) and the pressure at the time of plasma generation is P (Pa)
- B 2 H 6 which is extremely toxic to the human body, can be diluted as much as possible to enhance safety.
- a plasma having a higher ion current density and an electron temperature can be obtained as a plasma containing an impurity to be doped at a certain pressure. Further, the state of the plasma can be stabilized when the plasma is generated.
- the device 100 controls the discharge with the high-frequency power source 101 for generating plasma.
- the glass member 116 is a member made of quartz glass or the like that can transmit the generated electromagnetic wave into the chamber 115 while maintaining the degree of vacuum of the chamber 115.
- the required gas is supplied from the Ar gas source or the B 2 H 6 gas source into the chamber reaction 115 via the mass flow controller 104 or 105.
- the degree of vacuum in the reaction chamber 115 is controlled by the mass flow controllers 104 and 105, the turbo molecular pump 106, the conductance pump 107, and the dry pump 108.
- Power is supplied to the reaction chamber 115 from the RF or DC power supply 110 via the matching box 111.
- the object to be processed 113 is placed on a susceptor 114 installed in the reaction chamber 115 and supplied with the electric power.
- Ar gas is introduced into the reaction chamber 115, source power is applied, and discharge is performed to generate Ar plasma.At the same time as He gas is introduced, supply of Ar gas is stopped and He plasma is generated. After that, an experiment was conducted in which B 2 H 6 gas was introduced to generate a mixed plasma of He and B 2 H 6 . The experiment was performed by changing the pressure, and the pressure range in which a mixed plasma of He and B 2 H 6 was obtained was examined. As a result, they found that stable discharge was possible when the pressure was 0.8 Pa or more.
- B 2 H 6 gas is used as a substance containing impurities to be dropped, and Ar gas is used as a substance having a small ionization energy, and plasma of a substance having a smaller ionization energy than the substance containing the impurities to be doped is used. previously it is generated, and in that discharging the material containing impurities to be doped after mowing, mixed-plasma of He and B 2 H 6 at a pressure lower than that did not discharge prior to ionization energy is small material Was able to occur.
- Figure 2 shows the change in ion current density when helicon wave plasma is generated by changing the mixing ratio of B 2 H 6 gas and He gas.
- the vertical axis represents the ion current density
- the horizontal axis represents the B 2 H 6 gas concentration in the mixed gas of B 2H 6 gas and He gas.
- the Ka gas concentration on the horizontal axis indicates the He gas concentration.
- the pressure was set at 0.9 Pa.
- B 2 H 6 gas concentration was decreased, the ion current density increased stepwise when the B 2 H 6 gas concentration was 1% or less.
- B 2 H 6 gas concentration is 5% 2.
- the ion current density drastically changes stepwise at around 0.5%.
- the fact that such a tendency is obtained at less than 0.5% using a helicon wave plasma source is a remarkable effect not disclosed in the conventional example.
- Electronic temperature Figure 3 shows the change in electron temperature when the mixing ratio of B 2 H 6 gas and He gas is changed.
- the vertical axis represents the electron temperature Te (e V)
- the horizontal axis represents the B 2 H 6 gas concentration in the mixed gas of B 2 H 6 gas and He gas.
- the Ka gas concentration on the horizontal axis indicates the He gas concentration.
- the pressure was 0.9 Pa using helicon wave plasma.
- the electron temperature increased as the B 2 H 6 gas concentration decreased.
- the B 2 H 6 gas concentration was almost saturated at 0.025%.
- the electron temperature was less than 6. O eV when the B 2 H 6 gas concentration was 0.29% or more, and was 6. O eV or more when the B 2 H 6 gas concentration was 0.025%.
- Plasma doping was performed on n_Si (100) wafers using two types of mixed plasmas of B 2 H 6 and He with B 2 H 6 gas concentrations of 0.025% and 0.29%.
- the bias voltage was -60V and the pressure was 0.8Pa.
- an annealing treatment was performed at 1100 ° C. for 3 minutes. Then, the sheet resistance was measured by the four probe method.
- the boron dose after plasma doping was measured by SIMS.
- Figure 4 shows the relationship between the bias voltage application time (horizontal axis) and the sheet resistance value (vertical axis).
- the line 401 shows the measurement result when the B 2 H 6 gas concentration is 0.29% (that is, the He gas concentration is 99.71), and the line 402 shows the measurement result when the B 2 H 6 gas concentration is 0.025%. (Ie, the He gas concentration is 99.975%).
- the sheet resistance was about 400 oh s / squ, even if the bias voltage application time was changed to 3, 7, and 30 seconds. Did not change much at.
- the sheet resistance is changed to 1,020, 460, and 370 by changing the bias voltage application time to 1, 3, 7, and 30 seconds. 350, 290 ohms / squ.
- the amount of pollen after the plasma doping was variable as 2.2E, 6.0E14, 6.5E14, 8.0E14 atoms / cm 2 .
- the depth at which the concentration of the polon becomes 1E18 atoms / cm 3 was 4 to 6 nm or less.
- a device was prototyped using the plasma doping apparatus shown in Fig. 1.
- An n-Si (100) wafer 113 with a mask patterned in advance is placed on a susceptor 111 and accommodated in a reaction chamber 111, and then the conductance valve 107 is opened.
- the pressure in the reaction chamber 1 1 15 was reduced using 06.
- Ar gas was introduced into the reaction chamber 115 through the mass flow controller 104, and a source power was applied to discharge the gas to generate Ar plasma.
- He gas was introduced through the mass flow controller 105 and the supply of Ar gas was stopped at the same time to generate He plasma.
- the source power of the helicon wave was set to 150 W.
- a mixed gas with a B 2 H 6 gas concentration of 0.025% and a He gas concentration of 99.975% is introduced via the MAFF controller 105. Then, a mixed plasma was generated at a pressure of 0.8 Pa. Doping was performed by applying a bias voltage of 160 V for 30 seconds. After the treatment, the removed wafer 113 was heat-treated. On the wafer 113 after the heat treatment, a resistance pattern corresponding to a sheet resistance value of 290 ohms / squ. was formed. In a similar manner, by doping with a bias voltage of 160 V for various times, patterns with different sheet resistance values could be formed.
- the plasma doping method of the present invention can be used for manufacturing electric and electronic devices such as semiconductor devices and liquid crystal panels, or passive electric devices such as capacitors, resistors, and coils.
- INDUSTRIAL APPLICABILITY As described above, according to the present invention, B 2 H 6 is diluted as much as possible to enhance safety and to stably generate plasma without reducing doping efficiency.
- the present invention can provide a plasma doping method which can maintain the temperature and can easily control the amount of dopant to be injected.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/532,768 US7192854B2 (en) | 2002-11-29 | 2003-11-18 | Method of plasma doping |
AU2003284404A AU2003284404A1 (en) | 2002-11-29 | 2003-11-18 | Method of plasma doping |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-347177 | 2002-11-29 | ||
JP2002347177A JP4544447B2 (ja) | 2002-11-29 | 2002-11-29 | プラズマドーピング方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004051720A1 true WO2004051720A1 (ja) | 2004-06-17 |
Family
ID=32462873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/014633 WO2004051720A1 (ja) | 2002-11-29 | 2003-11-18 | プラズマドーピング方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7192854B2 (ja) |
JP (1) | JP4544447B2 (ja) |
AU (1) | AU2003284404A1 (ja) |
TW (1) | TWI307119B (ja) |
WO (1) | WO2004051720A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7348264B2 (en) * | 2004-12-13 | 2008-03-25 | Matsushita Electric Industrial Co., Ltd. | Plasma doping method |
CN102203946A (zh) * | 2008-10-31 | 2011-09-28 | 应用材料股份有限公司 | P3i工艺中掺杂分布的修正 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040149219A1 (en) * | 2002-10-02 | 2004-08-05 | Tomohiro Okumura | Plasma doping method and plasma doping apparatus |
CN1751381A (zh) * | 2003-02-19 | 2006-03-22 | 松下电器产业株式会社 | 杂质导入方法 |
EP1672683A4 (en) * | 2003-10-09 | 2008-10-01 | Matsushita Electric Ind Co Ltd | TRANSITION EDUCATION PROCEDURE AND OBJECT THEREFORE TO BE PROCESSED AND PRODUCED |
JPWO2005119745A1 (ja) * | 2004-06-04 | 2008-04-03 | 松下電器産業株式会社 | 不純物導入方法 |
US20050287307A1 (en) * | 2004-06-23 | 2005-12-29 | Varian Semiconductor Equipment Associates, Inc. | Etch and deposition control for plasma implantation |
US20060040499A1 (en) * | 2004-08-20 | 2006-02-23 | Steve Walther | In situ surface contaminant removal for ion implanting |
US20090233383A1 (en) | 2005-02-23 | 2009-09-17 | Tomohiro Okumura | Plasma Doping Method and Apparatus |
JP5097538B2 (ja) * | 2005-03-28 | 2012-12-12 | パナソニック株式会社 | プラズマドーピング方法およびこれに用いられる装置 |
WO2006106871A1 (ja) * | 2005-03-30 | 2006-10-12 | Matsushita Electric Industrial Co., Ltd. | アッシング装置、アッシング方法および不純物ドーピング装置 |
CN101151707B (zh) | 2005-03-30 | 2012-08-29 | 松下电器产业株式会社 | 杂质导入装置和杂质导入方法 |
US20090035878A1 (en) * | 2005-03-31 | 2009-02-05 | Yuichiro Sasaki | Plasma Doping Method and Apparatus |
CN101160643B (zh) | 2005-05-12 | 2012-04-18 | 松下电器产业株式会社 | 等离子体掺入方法和等离子体掺入设备 |
KR100631400B1 (ko) * | 2006-06-29 | 2006-10-04 | 주식회사 아이피에스 | 상변화 메모리용 칼코제나이드막 증착 방법 |
KR100955144B1 (ko) * | 2006-10-03 | 2010-04-28 | 파나소닉 주식회사 | 플라즈마 도핑 방법 및 장치 |
WO2008059827A1 (fr) | 2006-11-15 | 2008-05-22 | Panasonic Corporation | Procédé de dopage de plasma |
US7732309B2 (en) * | 2006-12-08 | 2010-06-08 | Applied Materials, Inc. | Plasma immersed ion implantation process |
JP2008300687A (ja) * | 2007-05-31 | 2008-12-11 | Tokyo Electron Ltd | プラズマドーピング方法及びその装置 |
US8012862B2 (en) | 2007-11-22 | 2011-09-06 | Panasonic Corporation | Method for manufacturing semiconductor device using plasma doping |
JP4880033B2 (ja) * | 2007-12-28 | 2012-02-22 | パナソニック株式会社 | 半導体装置の製造方法 |
US7586100B2 (en) * | 2008-02-12 | 2009-09-08 | Varian Semiconductor Equipment Associates, Inc. | Closed loop control and process optimization in plasma doping processes using a time of flight ion detector |
KR100985880B1 (ko) | 2008-05-21 | 2010-10-08 | 주식회사 하이닉스반도체 | 플라즈마 도핑 장비의 모니터링 방법 |
JP5097233B2 (ja) | 2010-03-19 | 2012-12-12 | パナソニック株式会社 | プラズマドーピング方法 |
JP2019046976A (ja) * | 2017-09-01 | 2019-03-22 | Tdk株式会社 | スピン流磁化反転素子、磁気メモリ |
JP7117354B2 (ja) * | 2020-09-14 | 2022-08-12 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
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JPH1012890A (ja) * | 1996-06-20 | 1998-01-16 | Sony Corp | 薄膜半導体装置の製造方法 |
EP1054433A1 (en) * | 1999-05-14 | 2000-11-22 | Canon Sales Co., Inc. | Plasma doping system and plasma doping method |
JP2002170782A (ja) * | 2000-12-04 | 2002-06-14 | Matsushita Electric Ind Co Ltd | プラズマドーピング方法およびプラズマドーピング装置 |
WO2002080254A1 (fr) * | 2001-03-28 | 2002-10-10 | Tokyo Electron Limited | Dispositif de traitement plasma par micro-ondes, procede d'allumage de plasma, procede de formation de plasma et procede de traitement plasma |
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US6784080B2 (en) * | 1995-10-23 | 2004-08-31 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing semiconductor device by sputter doping |
JP2000114198A (ja) * | 1998-10-05 | 2000-04-21 | Matsushita Electric Ind Co Ltd | 表面処理方法および装置 |
US7064491B2 (en) * | 2000-11-30 | 2006-06-20 | Semequip, Inc. | Ion implantation system and control method |
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2002
- 2002-11-29 JP JP2002347177A patent/JP4544447B2/ja not_active Expired - Fee Related
-
2003
- 2003-11-18 WO PCT/JP2003/014633 patent/WO2004051720A1/ja active Application Filing
- 2003-11-18 US US10/532,768 patent/US7192854B2/en not_active Expired - Fee Related
- 2003-11-18 AU AU2003284404A patent/AU2003284404A1/en not_active Abandoned
- 2003-11-28 TW TW092133563A patent/TWI307119B/zh not_active IP Right Cessation
Patent Citations (4)
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JPH1012890A (ja) * | 1996-06-20 | 1998-01-16 | Sony Corp | 薄膜半導体装置の製造方法 |
EP1054433A1 (en) * | 1999-05-14 | 2000-11-22 | Canon Sales Co., Inc. | Plasma doping system and plasma doping method |
JP2002170782A (ja) * | 2000-12-04 | 2002-06-14 | Matsushita Electric Ind Co Ltd | プラズマドーピング方法およびプラズマドーピング装置 |
WO2002080254A1 (fr) * | 2001-03-28 | 2002-10-10 | Tokyo Electron Limited | Dispositif de traitement plasma par micro-ondes, procede d'allumage de plasma, procede de formation de plasma et procede de traitement plasma |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7348264B2 (en) * | 2004-12-13 | 2008-03-25 | Matsushita Electric Industrial Co., Ltd. | Plasma doping method |
US7407874B2 (en) * | 2004-12-13 | 2008-08-05 | Matsushita Electric Industrial Co., Ltd. | Plasma doping method |
CN102203946A (zh) * | 2008-10-31 | 2011-09-28 | 应用材料股份有限公司 | P3i工艺中掺杂分布的修正 |
Also Published As
Publication number | Publication date |
---|---|
TW200415668A (en) | 2004-08-16 |
US20050287776A1 (en) | 2005-12-29 |
US7192854B2 (en) | 2007-03-20 |
JP2004179592A (ja) | 2004-06-24 |
AU2003284404A1 (en) | 2004-06-23 |
TWI307119B (en) | 2009-03-01 |
JP4544447B2 (ja) | 2010-09-15 |
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