WO2004023560A1 - 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 - Google Patents
有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 Download PDFInfo
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- WO2004023560A1 WO2004023560A1 PCT/JP2003/010990 JP0310990W WO2004023560A1 WO 2004023560 A1 WO2004023560 A1 WO 2004023560A1 JP 0310990 W JP0310990 W JP 0310990W WO 2004023560 A1 WO2004023560 A1 WO 2004023560A1
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- Prior art keywords
- film transistor
- organic thin
- organic semiconductor
- thin film
- oligomer
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- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
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- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
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- 235000019253 formic acid Nutrition 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
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- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- KDEZIUOWTXJEJK-UHFFFAOYSA-N heptacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC7=CC=CC=C7C=C6C=C5C=C4C=C3C=C21 KDEZIUOWTXJEJK-UHFFFAOYSA-N 0.000 description 1
- QSQIGGCOCHABAP-UHFFFAOYSA-N hexacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC=CC=C6C=C5C=C4C=C3C=C21 QSQIGGCOCHABAP-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
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- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- COQAIRYMVBNUKQ-UHFFFAOYSA-J magnesium;barium(2+);tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Mg+2].[Ba+2] COQAIRYMVBNUKQ-UHFFFAOYSA-J 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- DZVCFNFOPIZQKX-LTHRDKTGSA-M merocyanine Chemical compound [Na+].O=C1N(CCCC)C(=O)N(CCCC)C(=O)C1=C\C=C\C=C/1N(CCCS([O-])(=O)=O)C2=CC=CC=C2O\1 DZVCFNFOPIZQKX-LTHRDKTGSA-M 0.000 description 1
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
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- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 229920005548 perfluoropolymer Polymers 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000323 polyazulene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000015 polydiacetylene Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 125000003960 triphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12)* 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
Definitions
- the present invention relates to an organic thin film transistor and a method of manufacturing the organic thin film transistor.
- Organic semiconductors are easier to process than inorganic semiconductors and have higher affinity for plastic supports, making them attractive as thin-layer devices.
- JP-A-9-232589 and JP-A-7-206599 describe that the carrier mobility of an organic semiconductor layer is improved by providing an alignment film.
- the liquid crystallinity when a semiconductor polymer is heated to a temperature higher than the liquid crystal phase temperature and an alignment film adjacent to the semiconductor polymer are used to perform an alignment treatment of the organic semiconductor, thereby obtaining a mobility of the organic semiconductor channel.
- the technology to improve the quality is shown.
- An object of the present invention is to provide a method for producing an organic thin-film transistor and an organic thin-film transistor in which the mobility of carriers (electrons or holes) is high and in which a general-purpose plastic, transparent resin, or the like can be used as a support. It is to be. Disclosure of the invention
- an organic thin film transistor having at least a gate electrode, an insulating layer, a source electrode, a drain electrode, and an organic semiconductor layer on a support
- the support is composed of one or more resins
- the semiconductor layer includes one or more organic semiconductor materials, and one or more of the one or more organic semiconductor materials has a phase transition temperature of the one or more organic semiconductor materials.
- Organic thin-film transistors that are below the glass transition temperature of one of the resins.
- the organic thin-film transistor according to the item 11 having an orientation layer, wherein the orientation layer is in contact with the organic semiconductor layer.
- organic thin film transistor according to 11 above wherein one of the one or more organic semiconductor materials is a ⁇ -conjugated polymer or a 7 ⁇ -conjugated oligomer.
- the thiophene homopolymer or copolymer is a homopolymer or copolymer containing a unit in which two or more (3-alkylthiophenes) are regioregularly and continuously connected, and the thiophene homooligomer is 109.
- the production method comprises preparing a solution or dispersion of the organic semiconductor material to obtain an organic semiconductor layer coating solution, and applying the coating solution on the support or the insulating layer to form an organic semiconductor layer. Including forming a semiconductor layer.
- the manufacturing method may include, after forming the organic semiconductor layer, setting the organic semiconductor layer to the phase transition temperature or higher and the glass transition point or lower. A heat treatment at the heat treatment temperature.
- the heat treatment temperature is in a range of 100 to 250 ° C.
- the phase transition temperature is in a range of 100 to 240.
- the glass transition point is in a range of 110 to 250 ° C.
- one of the one or more organic semiconductor materials may be a 7T conjugated polymer or the like. Or ⁇ -conjugated oligomer.
- the ⁇ -conjugated polymer is a homopolymer or copolymer of thiophene
- the pit-conjugated oligomer is a homo-oligomer of thiophene or Cooligomers.
- the thiophene homopolymer or copolymer comprises two or more (3-alkylthiophenes) in a regioregular and continuous manner.
- a homopolymer or a copolymer comprising units connected in series, wherein the homo-oligomer or co-oligomer of the thiophene is a unit in which two or more (3-alkylthiophenes) are connected in a regioregular and continuous manner.
- the homopolymer comprises a unit in which the two or more (3_alkylthiophenes) are regioregularly and continuously connected.
- the alkyl of a copolymer, or the alkyl of a homo- or co-oligomer containing a unit in which two or more (3-alkylthiophenes) are connected in a regioregular and continuous manner has 4 to 15 carbon atoms. This is an alkyl group.
- an organic thin film transistor having at least a gate electrode, an insulating layer, a source electrode, a drain electrode, and an organic semiconductor layer on a support,
- the support is composed of at least one resin, the organic semiconductor layer includes at least one organic semiconductor material, and at least one phase transition temperature of the organic semiconductor material configures the support.
- An organic thin film transistor having a glass transition temperature of at least one of the above resins.
- the organic semiconductor layer may include a step of applying a solution or dispersion of at least one kind of organic semiconductor material.
- Characteristic method for producing organic thin film transistor BRIEF DESCRIPTION OF THE FIGURES
- 1 (a) to 1 (f) are cross-sectional views showing an embodiment of the configuration of the organic thin film transistor of the present invention.
- the present inventors have found that at least a gate electrode, an insulating layer, a source electrode, a drain electrode, and an organic semiconductor layer are formed on a support, as described in claim 1.
- the support is made of at least one kind of resin
- the organic semiconductor layer contains at least one kind of semiconductor material
- at least one phase transition temperature of the semiconductor material is the same as the above.
- the mobility of carriers (electrons or holes) is high by adjusting at least one of the resins constituting the support so as to be lower than the softening point, and a general-purpose plastic or transparent material is used as the support. It has been found that it is possible to provide an organic thin film transistor and a method of manufacturing an organic thin film transistor in which a suitable resin or the like can be used.
- Organic semiconductor materials also called organic semiconductor compounds
- the organic semiconductor material according to the present invention will be described.
- the organic semiconductor material known T-conjugated polymers, 7C-conjugated oligomers or other compounds described below are used.
- the 7T copolymer-based oligomer refers to an oligomer whose number of repeating units in the oligomer is 2 to 20 (polymerization degree n is 2 to 20).
- the 7T conjugated polymer preferably has a weight-average molecular weight in the range of 100 to 500, more preferably 500 to 0000. Say something.
- Examples of the ⁇ -conjugated polymer include polypyrroles such as polypyrrole, poly ( ⁇ -substituted pyrrole), poly (3-substituted pyrrole), poly (3,4-disubstituted pyrrole), polythiophene, poly ( Polythiophenes such as 3-substituted thiophene), poly (3,4-disubstituted thiophene) and polybenzothiophene; polyisothianaphthenes such as polyisothianaphthene; and polychenylenevinylenes such as polycelenylenevinylene Poly ( ⁇ -phenylenevinylene), such as poly ( ⁇ -phenylenevinylene), polyaniline, poly ( ⁇ ⁇ -substituted aniline), poly (3-substituted aniline), poly (2,3-substituted aniline) Polyacetylenes, such as polyacetylene, polyacetylenes such
- Polypyrenes such as polypyrene, polycarbazoles such as polycarbazole and poly ( ⁇ -substituted rubazole), polyselenophenes such as polyselenophene, polyfurans such as polyfuran and polybenzofuran, poly ( ⁇ -phen) Poly ( ⁇ -phenylene) s such as diene); polyindoles such as polyindole; polypyridazines such as polypyridazine; and polysulfides such as polyphenylene sulfide and polyvinylene sulfide.
- an optional component of the polymer A copolymer consisting of a plurality of fibers can be used.
- an oligomer having the same repeating unit as the above-mentioned polymer for example, a thiophene hexamer, iesecityofen, ⁇ , ⁇ -dihexyl ⁇ -sexitythiophene, ⁇ , ⁇ -diene Oligomers such as hexyl- ⁇ -quinkethiophene,, ⁇ -bis (3-butoxypropyl) - ⁇ -sexityophen, and the like.
- organic semiconductor materials include styrylbenzene derivatives, naphthene sen, pen benzene, hexacene, heptacene, dibenzopentacene, tetrabenzophenone, pyrene, dibenzopyrene, chrysene, perylene, coronene, terylene, and saibaren. , Quaterylene, sacamamthracene and other polyacenes and derivatives in which a portion of the carbon of the polyacenes is substituted with an atom such as N, S, 0, etc., or a functional group such as a carbonyl group.
- copper phthalocyanine metal phthalocyanines such as fluorine-substituted copper phthalocyanine described in Japanese Patent Application Laid-Open No.
- naphthalene 1,4,5,8-tetrafluorosulfonic acid diimide N, N '—Bis (4-trifluoromethylbenzyl) naphthalene 1,4,5,8-Tetra-propionic diimide, N, N, monobis (1H, 1H-perfluorooctyl), N , N'-bis (1H, 1H-perfluorobutyl) and ⁇ , ⁇ 'dioctylnaphthalene 1,4,5,8-tetracarboxylic acid diimide derivative, naphthalene 2,3,6,7 tetrapyrupon Tetraimides such as naphthalene tetracarboxylic acid diimides and anthracene 2,3,6,7-tetracarboxylic acids Condensed rings such as anthracenetetracarboxylic acid diimides such as ruponic acid diimides Tetra sulfonic acid diimides, fuller
- organic semiconductor materials include tetrathiafulvalene (TTF)-tetracyanoquinodimethane (TCNQ) complex, bisethylenetetrathiafulvalene (BEDTTTF)-perchlorate complex, BEDTTT F-iodine complex, TCNQ-iodine complex Organic molecule complexes such as and can also be used. Further, sigma-conjugated polymers such as polysilane and polygermane can also be mentioned as organic / inorganic hybrid materials described in JP-A-2000-260999.
- organic semiconductor materials described above thiophene, vinylene, chenylenevinylene, phenylenevinylene, ⁇ -phenylene, a substituted body thereof, or a 7-conjugated polymer or oligomer having a repeating unit of two or more thereof, a pen
- At least one member selected from the group consisting of condensed polycyclic aromatic compounds such as benzene is preferred.
- an organic semiconductor material having a substituent such as an alkyl group having 415 carbon atoms in at least one position of the repeating unit and having a three-dimensional regular structure is preferable.
- the alkyl group as a substituent increases the solubility of the organic semiconductor material in an organic solvent, and is effective in imparting regularity to the higher-order structure of the polymer when the organic semiconductor layer is formed.
- C-conjugated polymers or oligomers homopolymers, copolymers, homo-oligomers and co-oligomers having a thiophene ring are preferred, and two or more (3-alkylthiophenes) are connected regularly and continuously. More preferred are homopolymers, copolymers, homooligomers or cooligomers containing units.
- a method of preparing a coating liquid containing an organic semiconductor material and then applying the coating liquid is preferably used from the viewpoint that productivity is improved and thin film preparation can be precisely controlled.
- the alkyl group of the trialkylthiophene a linear alkyl group having 4 to 15 carbon atoms is preferable, and further, the transition temperature of the organic semiconductor material in the organic semiconductor layer described below to the liquid crystal layer is 240 ° C or lower, and in order to make a general-purpose resin usable as a support, a linear alkyl group having 6 or more carbon atoms is preferable, and a linear alkyl group having 8 to 6 carbon atoms is particularly preferable. 12 alkyl groups .
- Body such as regioregu 1 ar body.
- polymers or oligomers can be used.
- Examples of the polythiophene used in the present invention include JP-A-10-190001, Nature, Vol. 41, p. 685 (1999), Appl. Phy s. Lett. 69, p. 4108 (1996), etc. And the like.
- the weight average molecular weight of the thiophene homopolymer or copolymer according to the present invention is preferably in the range of 1,000 to 500,000, more preferably in the range of 5,000 to 100,000.
- the organic thin-film transistor of the present invention has the effects described in the present invention, that is, an organic thin-film transistor that has high carrier (electron or hole) mobility and can use a general-purpose plastic, transparent resin, or the like as a support.
- the phase transition temperature of the organic semiconductor material includes a melting point, a softening point, a secondary transition temperature (for example, a glass transition temperature), a transition temperature to a liquid crystal phase, and the like.
- the phase transition temperature is preferably in the range of 100 to 240 ° C.
- the melting point of the organic semiconductor material, the transition temperature to the liquid crystal phase, and the like are the few factors that constitute the support. It is preferably at least the glass transition point of at least one resin.
- the above melting point was measured using a commercially available automatic melting point analyzer, and the liquid crystal phase transition temperature was also measured using a commercially available differential scanning calorimeter (DSC) and polarization microscope observation (POM).
- DSC differential scanning calorimeter
- POM polarization microscope observation
- XRD X-ray diffraction
- the method for producing the organic semiconductor layer (organic thin film) according to the present invention includes a vacuum deposition method, a molecular beam epitaxy growth method, an ion cluster beam method, a low energy ion beam method, an ion plating method, and a CVD (Chemica 1 V) method. aor D epostion) method, sputtering method, plasma polymerization method, electrolytic polymerization method, chemical polymerization method, spray coating method, spin coating method, blade coating method, dip coating method, casting method, roll coating method, per coating method, A die coating method, an ink jet method, an LB method, and the like can be used, and can be used depending on the material.
- an organic semiconductor material is dissolved in an appropriate organic solvent, and a thin film can be easily and precisely formed using the prepared solution, a spin coating method, a blade coating method, a dip coating method.
- Preferred examples of the method for producing the organic semiconductor layer include a roll coating method, a bar coating method, a die coating method, and an ink jet method.
- heat treatment is preferably performed.
- the semiconductor layer is formed by heating the organic semiconductor material to a phase transition temperature, preferably a melting point or higher, to cause the semiconductor material to undergo phase transition, and then solidify by cooling.
- the thickness of the organic semiconductor thin film is not particularly limited, but the characteristics of the obtained transistor are largely influenced by the thickness of the organic semiconductor layer composed of the organic semiconductor.
- the thickness varies depending on the organic semiconductor, but is generally preferably 1 m or less, particularly preferably in the range of 10 nm to 300 nm.
- the glass transition point (S ° C) of at least one resin constituting the support is determined by determining at least one type of phase transition temperature (T °) of the organic semiconductor material.
- T ° phase transition temperature
- a general-purpose resin may be used as the resin constituting the support as long as the above relational expression is satisfied. Can be used.
- the support is made of glass or a flexible resin sheet.
- a plastic film can be used as the sheet.
- the plastic film include conventionally known polyester films such as polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, and syndiotactic polystyrene.
- Polyethylene Polypropylene, cellophane, polyethersulfone (PES), polyetherimide (PEI), polyetheretherketone, polysulfone (PSF), polyphenylenesulfide, polyarylate, polyimide, polyamide, Licaponate (PC), norpolenene (cycloolefin) resin, polymethylpentene, fluororesin, nylon, polymethylmethacrylate, acrylic resin, cell roast triacetate (TAC), cellulose diacetate, cellulose acetate propionate (CAP), cellulose acetate butyrate And cellulose esters such as cellulose acetate phthalate and cellulose nitrate, and derivatives thereof, and the like.
- PES polyethersulfone
- PEI polyetherimide
- PSF polysulfone
- PC Licaponate
- norpolene (cycloolefin) resin polymethylpentene, fluororesin, nylon, polymethylmethacrylate, acrylic resin, cell roast triacetate (
- PES polyethersulfone
- PE1 polyetherimide
- PSF polyetheretherketone
- TAC cellulose triacetate
- DAC cell mouth diacetate
- CAP Cellulose acetate propionate
- CAP Cellulose acetate propionate
- These films can be subjected to known surface treatment and surface coating.
- a co-evaporated film of silicon oxide and aluminum oxide, a mixed film of silicon oxide and metal oxide such as aluminum oxide by an atmospheric pressure plasma method or a multilayer composite film may be formed as the gas barrier layer.
- a composite film may be used by laminating a film or the like on which a metal thin film such as aluminum is deposited, or a metal oxide fine particle may be contained in the film.
- the weight can be reduced as compared with the case of using a glass substrate, portability can be improved, and resistance to impact can be improved.
- the glass transition point of the resin constituting the support can be determined using a differential scanning calorimeter (DSC) or a dynamic viscoelasticity measuring device.
- the glass transition point of the polymer used in the present invention is preferably 11 ° C. or higher, more preferably 150 ° C. or higher. Further, the glass transition point of the polymer is preferably 350 ° C. or lower.
- the organic semiconductor material included in the organic semiconductor layer constituting the organic thin film transistor of the present invention has a liquid crystal property
- the organic semiconductor material having the liquid crystal property has a specific orientation adjacent to the organic semiconductor layer. It is preferable to have an orientation layer having a function of providing.
- the alignment layer (alignment film) a known technique used for a liquid crystal display or the like, for example, a technique described in JP-A-9-1194725 or JP-A-9-1258229 may be applied. it can.
- a material for forming the alignment layer (alignment film) polyimide, perfluoropolymer, liquid crystal polymer, or the like is used, and it is preferable to perform a rubbing treatment after forming the film. The method of orienting in an electromagnetic field described in U.S. Pat. No. 5,468,519 may be used.
- a photo-aligned alignment layer (alignment film) is preferable, and examples thereof include alignment described in JP-A-8-286180, JP-A-8-313910, and JP-A-9-148040.
- Layer (orientation film) is preferable, and examples thereof include alignment described in JP-A-8-286180, JP-A-8-313910, and JP-A-9-148040.
- the thickness of the orientation layer is preferably in the range of 1 nm to 5 m, and more preferably in the range of 5 nm to 100 nm.
- the organic semiconductor layer includes, for example, a material having a functional group such as acrylic acid, acetoamide, dimethylamino group, cyano group, carbonyl group, nitro group, or a benzoquinone derivative; And materials that act as electron acceptors, such as compounds and derivatives thereof, materials that have functional groups such as amino, triphenyl, alkyl, hydroxyl, alkoxy, and phenyl groups, and phenylenediamine Materials that can serve as donors of electrons, such as amines, anthracene, benzanthracene, substituted benzoanthracenes, pyrene, substituted pyrene, carpazole and its derivatives, and tetrathiafulvalene and its derivatives. And do so-called doping treatment.
- a material having a functional group such as acrylic acid, acetoamide, dimethylamino group, cyano group, carbonyl group, nitro group, or a benzoquinone derivative
- the above-mentioned doping means that an electron donating molecule (vacancy) or an electron donating molecule (donor) is introduced as a dopant into the thin film.
- the doped thin film is a thin film containing the condensed polycyclic aromatic compound and the dopant. Either an acceptor or a donor can be used as the dopant used in the present invention.
- the donor examples include alkali metals such as Li, Na, K, Rb, and Cs; alkaline earth metals such as Ca, Sr, and Ba; Y, La, Ce, Pr, Nd, Sm, and Eu. , Gd, Tb, Dy, Ho, Er, Yb and other rare earth metals, ammonium ions, R 4 P +, R 4 As +, R 3 S + (each R is alkyl Group, aryl group and the like. ), Acetylcholine and the like.
- alkali metals such as Li, Na, K, Rb, and Cs
- alkaline earth metals such as Ca, Sr, and Ba
- Y La, Ce, Pr, Nd, Sm, and Eu.
- Gd, Tb, Dy Ho, Er, Yb and other rare earth metals, ammonium ions
- R 4 P +, R 4 As +, R 3 S + each R is alkyl Group, aryl group and the like.
- a method of doping these dopants a method of preparing a thin film of an organic semiconductor in advance and introducing a dopant later, or a method of introducing a dopant at the time of forming a thin film of an organic semiconductor can be used.
- the doping of the former method gas-phase doping using a dopant in a gas state, liquid-phase doping in which a solution or liquid dopant is brought into contact with the thin film, and doping in which a solid-state dopant is brought into contact with the thin film.
- a solid-phase doping method for diffusing and doping a punt can be cited.
- the efficiency of doping can be adjusted by electrolysis.
- a mixed solution or a dispersion of the organic semiconductor material and the dopant may be simultaneously applied and dried.
- the dopant can be introduced by co-evaporating the dopant together with the organic semiconductor material.
- a dopant can be introduced into the thin film by sputtering using a binary target of an organic semiconductor material and a dopant.
- Still other methods include electrochemical doping, chemical doping such as photoinitiated doping, and for example the publications ⁇ Industrial Materials, Vol. 34, No. 4, p. 55,
- a gate electrode, a source electrode, and a drain electrode will be described.
- a material known as an organic thin film transistor can be used as the gate electrode, the source electrode, and the drain electrode.
- the source electrode and the drain electrode have low electric resistance at the contact surface with the semiconductor layer.
- a method for forming an electrode As a method for forming an electrode, a method for forming an electrode using a known photolithography method and a lift-off method on a conductive thin film formed by using a method such as evaporation or sputtering using the above as a raw material, or a metal such as aluminum or copper There is a method of etching using a resist by thermal transfer, ink jet, or the like on a foil.
- a conductive polymer solution or dispersion, or a conductive fine particle dispersion may be directly patterned by an ink jet, or may be formed from a coating film by lithography or laser ablation.
- a method of patterning an ink containing a conductive polymer or conductive fine particles, a conductive paste, or the like by a printing method such as letterpress, intaglio, planographic printing, screen printing, or the like can also be used.
- a printing method such as letterpress, intaglio, planographic printing, screen printing, or the like
- signal lines, scanning lines, and display electrodes are provided.
- the above materials and forming methods can be applied.
- fine particles used for the preparation of the conductive fine particles fine particles such as metals, inorganic oxides, inorganic nitrides, and polymers are used, but metal fine particles are preferable.
- the metal of the metal fine particles of the present invention includes platinum, gold, silver, nickel, chromium, copper, iron, tin, tantalum, indium, cobalt, palladium, tellurium, rhenium, iridium, aluminum, ruthenium, germanium, molybdenum, tungsten, Zinc, etc. can be used.
- platinum, gold, silver, copper, copper, chromium, iridium, nickel, palladium, molybdenum, and tungsten having a work function of 4.5 eV or more are preferable.
- a method for producing such metal fine particles there are physical production methods such as gas evaporation method, sputtering method and metal vapor synthesis method, and reduction of metal ion in liquid phase such as colloid method and coprecipitation method.
- Chemical production method for producing fine metal particles by using the colloid method described in JP-A-11-176800, JP-A-11-180647, JP-A-2000-239853, etc. is preferable.
- Insulating layer also called gate insulating layer
- the insulating layer (gate insulating layer) used in the organic thin film transistor of the present invention will be described.
- Various insulating films can be used as the gate insulating layer.
- an inorganic oxide film having a high relative dielectric constant is preferable.
- Inorganic oxides include silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, barium strontium titanate, barium zirconate titanate, and zirconate titanate.
- Inorganic nitrides such as silicon nitride and aluminum nitride can also be suitably used.
- Examples of the method for forming the above-mentioned film include dry deposition methods such as vacuum deposition, molecular beam epitaxy, ion cluster beam, low energy ion beam, ion plating, CVD, sputtering, and atmospheric pressure plasma.
- Process coating method such as spray coating method, spin coating method, blade coating method, dip coating method, casting method, roll coating method, bar coating method, die coating method, etc., and patterning method such as printing and ink jetting.
- Etching process can be used and can be used depending on the material.
- the wet process is a method of applying and drying a liquid obtained by dispersing fine particles of an inorganic oxide in an optional organic solvent or water using a dispersing aid such as a surfactant as necessary.
- the so-called sol-gel method of applying and drying a solution of the alkoxide compound is used. Of these, the atmospheric pressure plasma method and the sol-gel method are preferred.
- the method of forming the insulating film by the atmospheric pressure plasma method will be described as follows.
- the above-mentioned method of forming an insulating film by the atmospheric pressure plasma method refers to a process of forming an insulating film on a substrate by discharging under an atmospheric pressure or a pressure near the atmospheric pressure, exciting a reactive gas by plasma, and forming an insulating film on a substrate.
- the method is described in JP-A-11-133205, JP-A-2000-185362, JP-A-11-61406, JP-A-2000-147209, and 2000-121804. As a result, highly functional thin films can be produced with high productivity. Can be formed.
- organic compound film examples include polyimide, polyamide, polyester, polyacrylate, a photo-curable resin of a photo-radical polymerization system, a photo-thion polymerization system, a copolymer containing an acrylonitrile component, polyvinyl phenol, Polyvinyl alcohol, nopolak resin, cyanoethyl pullulan, a phosphazene compound containing a polymer, an elastomer, or the like can also be used.
- the above-mentioned jet process is preferable.
- the inorganic oxide film and the organic compound film can be laminated and used together.
- the thickness of these insulating films is generally 50 nm to 3 m, preferably 100 nm to lzm.
- the surface of the insulating film can be surface-treated using a known silane coupling agent.
- FIG. 1 (a) to FIG. 1 (f) each show sectional views of a configuration example of the organic thin film transistor of the present invention.
- FIG. 1 (a) shows that a source electrode 2 and a drain electrode 3 each made of a metal foil or the like are formed on a support 6, and an organic semiconductor layer 1 containing an organic semiconductor material is formed between both electrodes.
- FIG. 4 is a cross-sectional view of an organic thin film transistor obtained by forming an insulating layer 5 thereon, and further forming a gate electrode 4 thereon to form an organic thin film transistor.
- the organic semiconductor layer 1 is formed between the electrodes in FIG. 1 (a), and the source electrode 2, the drain electrode 3 and the support 6 are formed using a coating method or the like.
- FIG. 3 is a cross-sectional view of an organic thin-film transistor obtained by forming so as to cover the entire surface.
- the organic semiconductor layer 1 is formed on the support 6 in advance using a coating method or the like.
- 3 is a cross-sectional view of an organic thin-film transistor obtained by forming a source electrode 2, a drain electrode 3, an insulating layer 5, and a gate electrode 4 in that order.
- FIG. 1 (d) shows that after forming a gate electrode 4 on a support 6 using a metal foil or the like, an insulating layer 5 is formed thereon, and a source electrode 2 and a drain electrode 3 are formed on the insulating layer 5 with a metal foil or the like. Are each formed, and an organic semiconductor layer 1 containing an organic semiconductor material is formed between the electrodes.
- FIG. 1 (e) shows a gate electrode 4 similar to FIG. 1 (d) except that the organic semiconductor layer 1 is formed so as to cover the source electrode 2, the drain electrode 3 and the insulating layer 5.
- FIG. 4 is a cross-sectional view of an organic thin-film transistor obtained by forming the organic semiconductor on a support 6 having the same.
- FIG. 1 (f) shows that a gate electrode 4 is formed on a support 6, an insulating layer 5 is formed on the gate electrode 4 and the support 6, and an organic semiconductor layer 1 is formed on the insulating layer 5.
- FIG. 2 is a cross-sectional view of an organic thin film transistor obtained by forming a source electrode 2 and a drain electrode on the organic semiconductor layer 1.
- Organic thin film transistors 1 to 11 were produced as described below.
- An organic thin film transistor 1 of the present invention was produced as described below.
- a 100 / im thick PES film (FS-130, manufactured by Sumitomo Belite Co., Ltd., the peak of the glass transition point of which was measured by DSC at 228 ° C) was used for sputtering.
- a 300-nm-thick and 300-m-wide aluminum film was formed by the Electrode.
- anodizing was performed in a 30% by mass aqueous sulfuric acid solution for 2 minutes using a direct current supplied from a low-voltage power supply of 30 V so that the thickness of the anodized film became 120 nm. . Furthermore, after performing steam sealing in a saturated steam chamber at 1 atmosphere and 100 ° C, a solution of polyimide 521 (manufactured by Nissan Chemical Industries, Ltd.) was applied using Apliquet It was applied to form a polyimide thin film having a thickness of 50 nm.
- Source and drain electrodes having a width of 100 im and a thickness of 100 nm were arranged so as to be orthogonal to the gate electrode.
- a poly (3-octylthiophene) regioregu 1 ar form (Rieke Meta 1 s, Inc., DSC, well-purified) so that the contents of Zn and Ni are reduced to 10 ppm or less.
- a chloroform solution having a melting point measured by 187 ° C) was prepared. This solution was discharged between a source electrode and a drain electrode using a piezo-type inkjet in a N 2 gas replacement atmosphere, dried at room temperature, and then subjected to a heat treatment at 50 ° C. for 30 minutes. . At this time, the thickness of poly (3-year-old tylthiophene) in the channel portion was 50 nm.
- This organic thin-film transistor exhibited favorable operating characteristics of a p-channel enhancement-type FET.
- it was When you calculate the mobility from the saturation region of the I one V characteristic 2 X 1 0- 3 cm 2 / V ⁇ s.
- the p-channel enhancement type FET exhibited good operating characteristics, and had a mobility of 1 ⁇ 10 to 2 cmVV ⁇ s.
- An organic thin-film transistor 3 was obtained in the same manner as in the preparation of the organic thin-film transistor 2 except that a 100 / zm-thick polyetherimide (PEI) film (FS_1400, manufactured by Sumitomo Beclite) was used.
- PEI polyetherimide
- the measured peak of the glass transition point of the above film by DSC was 219 ° C.
- DAC cellulose diacetate
- PSF polysulfone
- Synitomo Beichikrite, FS-1200 glass transition point: 190 °
- Organic thin film transistors 4 and 5 were produced in the same manner except that C) was used.
- the evaluation of the mobility was performed in the same manner as the evaluation of the organic thin film transistor 1.
- An organic thin film transistor 6 was manufactured in the same manner as in the preparation of the organic thin film transistor 2, except that a commercially available ARTON (manufactured by JSR Corporation) (glass transition point: 171 ° C.) was used as a support.
- ARTON manufactured by JSR Corporation
- organic thin film transistor 2 instead of poly (3-octylthiophene), a regiore gu ar body of poly (3-decylthiophene) (manufactured by LiekeMetals, Inc.) was used as the organic semiconductor, and Organic thin film transistors 7, 8, and 9 were produced in the same manner except that commercially available PES (polyether sulfone), DAC (diacetyl cellulose), and PEN (polyethylene naphthalate) were used.
- PES polyether sulfone
- DAC diacetyl cellulose
- PEN polyethylene naphthalate
- the mobility was evaluated in the same manner as the evaluation of the organic thin film transistor 1.
- organic thin film transistor 2 In the fabrication of the organic thin film transistor 2, a poly (3-hexylthiophene) regioreg U 1 ar body (manufactured by Lieke Metals, Inc.) was used as the organic semiconductor instead of poly (3-hexylthiophene).
- Organic thin-film transistors 10 and 11 were produced in the same manner except that commercially available PES and PEI (polyesterimide) were used as bodies.
- the evaluation of the mobility was performed in the same manner as the evaluation of the organic thin film transistor 1.
- Table 1 shows the obtained evaluations.
- the organic thin film of the present invention is compared with the comparative organic thin film transistor.
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AU2003264347A AU2003264347A1 (en) | 2002-09-05 | 2003-08-28 | Organic thin-film transistor and method for manufacturing organic thin-film transistor |
EP03794125A EP1548840A4 (en) | 2002-09-05 | 2003-08-28 | ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE TRANSISTOR |
JP2004534118A JP4867168B2 (ja) | 2002-09-05 | 2003-08-28 | 有機薄膜トランジスタの製造方法 |
US10/526,126 US20060060834A1 (en) | 2002-09-05 | 2003-08-28 | Organic thin-film transistor and method for manufacturing organic thin-film transistor |
US11/811,131 US7682867B2 (en) | 2002-09-05 | 2007-06-08 | Organic thin-film transistor and manufacturing method thereof |
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PCT/JP2003/010990 WO2004023560A1 (ja) | 2002-09-05 | 2003-08-28 | 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 |
Country Status (5)
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US (2) | US20060060834A1 (ja) |
EP (1) | EP1548840A4 (ja) |
JP (1) | JP4867168B2 (ja) |
AU (1) | AU2003264347A1 (ja) |
WO (1) | WO2004023560A1 (ja) |
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JP2006093191A (ja) * | 2004-09-21 | 2006-04-06 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ、有機薄膜トランジスタシート及びこれらの製造方法 |
JP2006229053A (ja) * | 2005-02-18 | 2006-08-31 | Ricoh Co Ltd | 有機半導体層を有する電界効果型有機薄膜トランジスタ |
EP1737045A1 (en) * | 2004-03-24 | 2006-12-27 | Japan Science and Technology Agency | Substrate with organic thin film, transistor using same, and methods for producing those |
JP2007535163A (ja) * | 2004-04-27 | 2007-11-29 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 溶融技術により有機半導体デバイスを形成する方法 |
JPWO2005122278A1 (ja) * | 2004-06-10 | 2008-04-10 | コニカミノルタホールディングス株式会社 | 有機半導体薄膜、有機半導体デバイス、有機薄膜トランジスタ及び有機エレクトロルミネッセンス素子 |
JPWO2005122277A1 (ja) * | 2004-06-10 | 2008-04-10 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタ |
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- 2003-08-28 US US10/526,126 patent/US20060060834A1/en not_active Abandoned
- 2003-08-28 WO PCT/JP2003/010990 patent/WO2004023560A1/ja active Application Filing
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Cited By (9)
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EP1737045A1 (en) * | 2004-03-24 | 2006-12-27 | Japan Science and Technology Agency | Substrate with organic thin film, transistor using same, and methods for producing those |
EP1737045A4 (en) * | 2004-03-24 | 2012-02-29 | Japan Science & Tech Agency | SUBSTRATE WITH THIN ORGANIC FILM, TRANSISTOR USING THE SAME, AND METHODS OF MAKING SAME |
JP2007535163A (ja) * | 2004-04-27 | 2007-11-29 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 溶融技術により有機半導体デバイスを形成する方法 |
US8241946B2 (en) | 2004-04-27 | 2012-08-14 | Creator Technology B.V. | Method of forming an organic semiconducting device by a melt technique |
JPWO2005122278A1 (ja) * | 2004-06-10 | 2008-04-10 | コニカミノルタホールディングス株式会社 | 有機半導体薄膜、有機半導体デバイス、有機薄膜トランジスタ及び有機エレクトロルミネッセンス素子 |
JPWO2005122277A1 (ja) * | 2004-06-10 | 2008-04-10 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタ |
JP2006093191A (ja) * | 2004-09-21 | 2006-04-06 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ、有機薄膜トランジスタシート及びこれらの製造方法 |
JP2006229053A (ja) * | 2005-02-18 | 2006-08-31 | Ricoh Co Ltd | 有機半導体層を有する電界効果型有機薄膜トランジスタ |
US7619242B2 (en) * | 2005-02-25 | 2009-11-17 | Xerox Corporation | Celluloses and devices thereof |
Also Published As
Publication number | Publication date |
---|---|
EP1548840A4 (en) | 2006-01-25 |
JP4867168B2 (ja) | 2012-02-01 |
US20080032441A1 (en) | 2008-02-07 |
AU2003264347A1 (en) | 2004-03-29 |
US20060060834A1 (en) | 2006-03-23 |
EP1548840A1 (en) | 2005-06-29 |
US7682867B2 (en) | 2010-03-23 |
JPWO2004023560A1 (ja) | 2006-03-30 |
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