WO2003107073A1 - 光学ローパスフィルタ - Google Patents
光学ローパスフィルタ Download PDFInfo
- Publication number
- WO2003107073A1 WO2003107073A1 PCT/JP2003/007167 JP0307167W WO03107073A1 WO 2003107073 A1 WO2003107073 A1 WO 2003107073A1 JP 0307167 W JP0307167 W JP 0307167W WO 03107073 A1 WO03107073 A1 WO 03107073A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- birefringent
- pass filter
- wafer
- degrees
- optical low
- Prior art date
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/08—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/288—Filters employing polarising elements, e.g. Lyot or Solc filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
- G02B27/46—Systems using spatial filters
Definitions
- the present invention relates to an optical aperture-one-pass filter / letter using a birefringent wafer.
- the optical low-pass filter cuts a high-frequency component of the image frequency of light in order to suppress a pseudo signal generated when an image sensor receives light, and its characteristics are determined by a separation pattern that separates light.
- This optical aperture one-pass filter is formed by superposing three birefringent wafers having different optical axes.
- the three superposed birefringent wafers are divided to form a large number of single-pass filters.
- all three birefringent wafers are formed by cutting a quartz ingot at 44.8 degrees with respect to its optical axis. These three birefringent wafers separate the incident light into a horizontal birefringent wafer in the horizontal direction and the incident light from the horizontal birefringent wafer by +45 degrees with respect to the separation direction. It consists of a 5-degree birefringent wafer and a 14-degree birefringent wafer that separates the incident light in the 45-degree direction with respect to the separation direction of the horizontal birefringent wafer.
- the + 45-degree birefringent plate and the -45-degree birefringent plate are sequentially superimposed to form an optical low-pass filter.
- the light incident on the optical low-pass filter is separated into an ordinary ray and an extraordinary ray by a horizontal birefringent plate, and the separated ordinary ray and extraordinary ray are separated by ⁇ 45 degrees birefringent plate. Points are separated.
- the cell pitch of the image sensor tends to be small.
- the number of pixels is increased by reducing the cell pitch (for example, from 2,000,000 pixels to 300,000 pixels) in a design of the same size as the conventional one. is there. Therefore, it is necessary to shorten the light separation width in the optical low-pass filter as the cell pitch of the CCD decreases.
- the thickness of the ⁇ 45 degree birefringent wafer needs to be 2 times that of the horizontal birefringent wafer. For this reason, a thinner thickness is required for a ⁇ 45 degree birefringent wafer, and it is difficult to perform polishing, which is a factor of cost increase.
- a quartz ingot does not actually grow so large, it is difficult to obtain a large ⁇ 45 ° birefringent wafer.
- a ⁇ 45-degree birefringent wafer has a rectangular shape with sides extending in the 45-degree direction with respect to the optical axis, and one corner is largely missing. In this case, the efficiency is poor due to loss of material in a multi-cavity process of dividing the birefringent wafer into a large number of rectangular optical aperture one-pass filters.
- an object of the present invention is to provide an optical low-pass filter that facilitates polishing of a birefringent wafer. It is an object of the present invention to provide an optical low-pass filter in which a large number of pieces are produced in a single production by reducing or reducing the ratio of the optical low-pass filter. Disclosure of the invention To achieve the above object, an optical low-pass filter according to the present invention is an optical low-pass filter comprising a birefringent wafer formed by cutting a quartz ingot at an angle with respect to its optical axis and separating incident light. The birefringent wafer is formed by cutting the crystal ingot at an angle larger than 44.8 degrees with respect to its optical axis.
- the birefringent wafer is formed by cutting the crystal ingot at an angle larger than 44.8 degrees with respect to its optical axis, so that the conventional cutting angle is 44.8 degrees.
- the processing work can be performed easily without worrying about material loss such as breakage of the birefringent wafer. This makes it possible to reduce production costs.
- the cutting angle of the birefringent wafer is set to an angle larger than 44.8 degrees with respect to the optical axis of the crystal ingot, the area of the birefringent wafer can be increased even if the crystal ingot has not grown so large.
- the ratio of the chipped portion to the entire birefringent wafer is reduced, so that it is divided into a large number of optical aperture one-pass filters.
- the production cost can be reduced by suppressing the number of defective optical aperture-one-pass filters formed during the process.
- the birefringent wafer is formed by cutting the crystal ingot at an angle larger than 44.8 degrees with respect to its optical axis, it is possible to increase the thickness of the birefringent wafer. This makes it possible to easily adjust the thickness to a preset thickness.
- the thickness of the optical low-pass filter is changed, and this change causes
- the thickness of the birefringent wafer was conventionally adjusted by adjusting the cutting angle of the birefringent wafer. It is possible to reduce the production cost by simply setting the size of the birefringent wafer without changing the optical path length in the digital camera.
- the thickness of the optical low-pass filter is reduced to prevent an increase in production cost due to a design change of the imaging device itself. Is set in advance. Therefore, if the optical low-pass filter according to the present invention is used for the imaging device, the birefringent wafer is formed by cutting the crystal ingot at an angle larger than 44.8 degrees with respect to the optical axis thereof. The separation width can be reduced without changing the thickness, and it is possible to cope with an increase in the number of pixels of the CCD.
- a plurality of the birefringent wafers are formed while being superimposed and divided into a plurality of pieces, and at least one of the plurality of birefringent wafers is configured so that the crystal ingot has an optical axis. It can also be formed by cutting at an angle greater than 44.8 degrees.
- the plurality of birefringent wafers are formed, and the plurality of birefringent wafers are divided to form a plurality of birefringent plates, respectively. At least one of the plurality of birefringent plates is formed by cutting the quartz ingot at an angle greater than 44.8 degrees with respect to its optical axis. You may.
- At least the crystal ingot is formed by cutting at least 44.8 degrees with respect to its optical axis on the plurality of superimposed birefringent wafers, and the incident light is directed in the horizontal direction or
- the first birefringent wafer, which is separated vertically, and the crystal ingot are formed by cutting the crystal ingot at an angle larger than 44.8 degrees with respect to the optical axis, and the incident light is formed in the horizontal or vertical direction.
- a second birefringent wafer separated in the direction of 45 degrees.
- the thickness of the second birefringent wafer separated in the direction of 45 degrees with respect to the horizontal or vertical direction is increased, the thickness of the second birefringent wafer, which is usually thinner than the thickness of the first birefringent wafer, is increased.
- the thickness of the refraction wafer is increased and the second birefringence wafer is polished, it is possible to easily perform a processing operation without worrying about the breakage of the birefringence wafer.
- the superimposed birefringent wafers are composed of one first birefringent wafer and two second birefringent wafers, and the first birefringent wafers are opposed to each other.
- the second birefringent wafer is formed in a rectangular shape having two sides parallel to the optical axis, and the second birefringent wafer has a pentagonal shape, and three adjacent corners are formed at substantially right angles. A side facing the center corner of the three corners and orthogonal to the optical axis may be formed.
- the angle larger than 44.8 degrees with respect to the optical axis of the crystal ingot is preferably set to 80 degrees or less with respect to the optical axis, and particularly, set to 69 degrees. It is more preferable for facilitating the formation of the optical low-pass filter.
- FIG. 1 (a) is a schematic view of a crystal ingot according to an embodiment of the present invention, in which a cutting angle for forming a birefringent wafer is 44.8 degrees with respect to an optical axis;
- the figure is a schematic diagram of a quartz ingot with a cutting angle of 69 degrees to the optical axis for forming a birefringent wafer.
- FIG. 2 (a) is a plan view of a birefringent wafer for horizontally separating incident light according to the embodiment of the present invention
- FIG. 2 (b) is a plan view of the birefringent wafer according to the embodiment of the present invention.
- FIG. 3 is a plan view of a birefringent wafer that separates incident light in a direction of +45 degrees with respect to the horizontal direction
- FIG. This is a birefringent wafer separated in one 45-degree direction.
- FIG. 4D is a plan view of three birefringent wafers according to the embodiment of the present invention, which are superposed.
- FIG. 5 is a graph showing the relationship between the cutting angle and the thickness ratio of the birefringent wafers 32, 33 when the cutting angle is 44.8 degrees according to the embodiment of the present invention. .
- FIG. 6 (a) is a layout view of components in an optical path of an imaging apparatus provided with an optical low-pass filter according to an embodiment of the present invention
- FIG. FIG. 4 is a layout diagram of components in an optical path of an imaging device provided with an optical low-pass filter.
- FIG. 7 is a diagram showing a separation pattern of light that has passed through the optical low-pass filter according to the embodiment of the present invention.
- FIGS. 8 (a) and 8 (b) show the thickness and the thickness of each crystal ingot respectively formed in order to compare the optical low-pass filter according to the embodiment of the present invention with the conventional optical low-pass filter. It is a figure showing effective length.
- FIG. 9 is a diagram showing another separation pattern of the light that has passed through the optical aperture one-pass filter according to the embodiment of the present invention, which is different from the separation pattern shown in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
- three birefringent wafers 31, 32, and 33 formed by cutting a crystal ingot 2 as shown in FIG. It is composed of
- the birefringent wafer 31 is the first birefringent wafer referred to in the present invention, and is a wafer that separates incident light in the horizontal direction.
- This birefringent wafer 31 is formed by cutting the crystal ingot 2 at 44.8 degrees with respect to its optical axis A, and as shown in FIG. It is formed in a rectangular shape parallel to the optical axis A.
- the birefringent wafer 32 is a wafer that separates incident light in the +45 degree direction with respect to the horizontal direction.
- This birefringent wafer 32 is formed by cutting the crystal ingot 2 at 69 degrees with respect to its optical axis A, and has a pentagonal shape as shown in FIG.
- Three contacting corners 5 are formed at right angles, and a side 6 is formed opposite to the central corner 5 of the three corners 5 and orthogonal to the optical axis A.
- the birefringent wafer 33 is a wafer that separates incident light in a direction of 144 degrees with respect to the horizontal direction.
- the birefringent wafer 33 is formed by cutting the crystal ingot 2 at 69 degrees with respect to its optical axis A, and has a pentagonal shape as shown in FIG.
- One corner 5 is formed at a right angle, and a side 6 is formed opposite to the central corner 5 of the three corners 5 and orthogonal to the optical axis A.
- These birefringent wafer 3 2, 3 3 is a second birefringent wafer in the present invention, 6 9 ° cutting angle for forming these birefringent wafer 3 2, 3 3 relative to the optical axis A
- this 69 degrees is calculated from Equation 1 shown below.
- FIG. 5 is a graph showing the relationship between the cutting angle and the thickness ratio of the birefringent wafers 32 and 33 when the cutting angle is 44.8 degrees.
- the separation width d (see FIG. 7) of the birefringent wafers 31, 32, 33 is related to the cutting angle ⁇ and the thickness t of the birefringent wafer.
- the cutting angle for forming the birefringent wafers 32 and 33 is 69 degrees with respect to the optical axis A, compared with the case where the cutting is performed at 44.8 degrees.
- the separation width d is reduced.
- the crystal ingot 2 is cut at 44.8 degrees with respect to its optical axis A (see FIG. 1 (a)) to form a birefringent wafer 31 shown in FIG. 2 (a).
- the crystal ingot 2 is cut at 69 degrees with respect to its optical axis A (see FIG. 1 (b)), and the birefringent wafer 32 shown in FIGS. 2 (b) and 2 (c) is cut. , 33 are formed.
- the formed birefringent wafers 31, 32, and 33 are overlapped and joined in the order of the birefringent wafer 31, the birefringent wafer 32, and the birefringent wafer 33.
- the bonded birefringent wafers 31, 32, and 33 are divided on a dividing line (see Fig. 2 (d)) into nine rectangular shapes by a dicing machine as a cutting device, and operate normally. Seven possible optical aperture one-pass filters 1 are formed.
- the light incident on the formed optical low-pass filter 1 is separated into an ordinary ray and an extraordinary ray by a horizontal birefringent plate (not shown) formed from the birefringent wafer 31, and the separated ordinary ray is separated from the ordinary ray.
- the extraordinary rays are separated into four points by ⁇ 45 degree birefringent plates (not shown) formed from the birefringent wafers 32 and 33, respectively.
- the optical low-pass filter 1 produced by the above-described production process is used for an imaging device such as a digital camera as shown in FIG. 6 (a), for example.
- this image pickup device receives a light condensed by the lens 7 and a plurality of light receiving elements (not shown) that converge the light taken in during the photographing.
- a CCD 8 for converting light information into digital data is provided.
- the optical low-pass filter 1 is provided in an optical path (length 1) between the lens 7 and the CCD 8.
- An AR coat (not shown) is formed on the light incident surface 1a and the light exit surface 1b of the optical low-pass filter 1 in order to prevent irregular reflection of light.
- the imaging device In the imaging device, light is incident on the lens 7 from the outside and is collected by the lens 7. Then, the condensed light is separated by the optical low-pass filter 1 and is incident on each light receiving element of the CCD 8.
- the cell pitch of the CCD 8 tends to be small. That is, near 7167
- the thickness of the optical aperture pass filter is adjusted by superposing a pass glass or the like on the birefringent plate.
- the thickness of the ⁇ 45-degree birefringent plates 32a and 33b is large, these ⁇ 45-degree birefringent Adjust the thickness of the plates 32a and 33b to a preset thickness.
- the separation width d can be shortened to cope with the increase in the number of pixels of the CCD 8, and without using other media such as pass glass other than the birefringent plate.
- production costs can be reduced. That is, for example, when increasing the number of pixels of the CCD 8 from 2.0 million pixels to 3.0 million pixels, the force S that requires a design change of the digital camera itself, such as changing the optical path length 1 in the digital camera, According to this optical low-pass filter 1, it is only necessary to adjust the thickness of the birefringent plates 32a, 33b in the ⁇ 45 degree direction to a preset thickness, and it is possible to reduce the production cost. .
- the birefringent wafer 32, 33 force separating the crystal ingot in the ⁇ 45 degree direction with respect to the horizontal direction is 69 degrees with respect to its optical axis A.
- the crystal ingot 2 forming the birefringent wafers 32 and 33 shown in the embodiment of the present invention is represented by t when viewed from the seed crystal 21.
- t when these birefringent wafers 32 and 33 are formed by cutting a quartz ingot at 44 and 8 degrees with respect to the optical axis as in the conventional case, as shown in FIG. 8 (b), The thickness of the crystal ingot 2 is t 'when viewed from the seed crystal 21'.
- the birefringent wafers 32 and 33 are formed from the crystal ingot 2 having the thickness t as shown in the embodiment of the present invention, and the birefringent wafer 3 2 ′ is formed from the conventional crystal ingot 21 and the conventional crystal ingot 21.
- the growth time of the crystal ingot 2 can be shortened, and the production cost can be reduced.
- the effective lengths Y and Y 'of the crystal ingots 2 and 2' become shorter as they are grown.
- the birefringent wafers 32 and 33 formed from the crystal ingot 2 are different. This is preferable in terms of production cost.
- the crystal ingot 2 having a thickness t is cut at 44.8 degrees with respect to its optical axis A to form a birefringent wafer 34, as shown in FIG. And the angle of the birefringent wafer 34 increases, so that many birefringent plates cannot be formed from the birefringent wafer 34, which is not preferable in terms of production efficiency.
- the cutting angle of the birefringent wafers 32, 33 is set with respect to the optical axis A of the crystal ingot 2.
- the angle By setting the angle to 69 degrees, the area of the birefringent wafers 3 2 and 3 3 can be increased and the corners of the birefringent wafers 3 2 and 3 3 can be increased even if the crystal ingot 2 has not grown so large. Even if one is missing, the ratio of the missing part to the entire birefringent wafers 32 and 33 becomes small, so that the defect formed when dividing into nine optical low-pass filters 1 is reduced.
- the number of optical low-pass filters 11 (see FIG. 2 (d)) can be reduced to two to reduce the production cost.
- the birefringent wafers 32 and 33 are formed by cutting at an angle of 69 degrees with respect to the optical axis A of the crystal ingot 2, and as can be seen from FIGS.
- the thickness t of the birefringent wafer can be increased by about 1.501 times as compared with the case where the cutting angle is 44.8 degrees. Even if it is other than 69 degrees, if it exceeds 44.8 degrees and is below the critical value of 80 degrees, which is the critical value where the thickness changes rapidly as shown in Fig. 5, the cutting angle is set arbitrarily.
- the thickness t of the birefringent wafer becomes larger than when the cutting angle is 44.8 degrees, and the effects of the embodiment of the present invention can be obtained.
- optical low-pass filter 1 is formed in a rectangular shape, the present invention is not limited to this.
- the optical low-pass filter 1 may be formed in any shape according to a required shape. Is also good.
- a force S using a wafer that separates the light incident on the birefringent wafer 31 in the horizontal direction, and a wafer that separates the incident light in the vertical direction may be used.
- the birefringent wafer 32 uses a wafer that separates the incident light in the +45 degree direction with respect to the vertical direction
- the birefringent wafer 33 uses the wafer that separates the incident light with respect to the vertical direction. Use a wafer that separates in 5 degrees direction.
- the force formed by superposing the birefringent wafer 31, the birefringent wafer 32, and the birefringent wafer 33 in this order is not limited to this.
- Birefringent wafer 32, birefringent wafer 33, and birefringent wafer 31 in that order or birefringent wafer 31, birefringent wafer 33, and birefringent wafer 32 in that order. You may use it.
- the number is not limited.
- the number is changed according to the application such as five, and the light separation point is changed. May be changed.
- the birefringent wafers 32 and 33 separate light in the direction of ⁇ 45 degrees, but the present invention is not limited to this.
- the light is separated in the direction of ⁇ 30 degrees according to the application. The angle may be changed.
- the light separation point can be changed from two to an arbitrary number of points.
- various patterns can be formed as shown in FIGS. 9 (a) to 9 (d).
- the birefringent wafers 32, 33 according to the embodiment of the present invention have a pentagonal shape.
- all the birefringent wafers may be formed by cutting the crystal ingot 2 at 69 degrees with respect to its optical axis ⁇ ⁇ in order to easily form the birefringent wafer.
- optical low-pass filters 1 are formed from the superposed birefringent wafer 31, birefringent wafer 32, and birefringent wafer 33, but this is required.
- the number of optical low-pass filters may be set arbitrarily according to the size.
- the production process of the optical low-pass filter 1 according to the embodiment of the present invention may be a production process described in detail below.
- the optical low-pass filter 1 produced from this production process has the same operational effects as the optical low-pass filter 1 produced from the production process described above.
- the crystal ingot 2 is cut at 44.8 degrees with respect to its optical axis A (see FIG. 1 (a)) to form a birefringent wafer 31 shown in FIG. 2 (a).
- the crystal ingot 2 is cut at 69 degrees with respect to its optical axis A (see FIG. 1 (b)), and the birefringent wafer shown in FIGS. 2 (b) and 2 (c) is cut.
- 32, 33 are formed. These formed birefringent wafers 31, 32, 33 are separated on a dividing line by a dicing machine, and each of the birefringent wafers 31, 32, 33 has nine birefringent plates (shown in the figure). (Omitted) Is done.
- each of the birefringent plates formed from the separate birefringent wafers 31, 32, and 33 is superposed and joined in that order, and one optical low-pass filter 1 is formed.
- an optical low-pass filter 1 that can operate normally is formed from the birefringent plates formed from the remaining birefringent wafers 31, 32, and 33.
- the optical low-pass filter 1 is used for an imaging device such as a digital camera, but the arrangement is not limited to the arrangement shown in FIG. 6 (a). 6 (b) The arrangement shown in FIG.
- a 45 ° directional birefringent plate 33a is provided in contact with the light incident surface of the CCD 8, and the horizontal birefringent plate 31a and the + 45 ° birefringent plate
- the directional birefringent plate 32a is provided at a position around the middle of the optical path (length 1) between the CCD 8 and the lens 7.
- An AR coat (not shown) is formed on 32c.
- the separation width d may be shortened by forming a plurality of birefringent plates, which are the configuration of the optical low-pass filter 1, at intervals.
- the 45 ° birefringent plate 33a is provided in contact with the light incident surface of the CCD 8, and the horizontal birefringent plate 31a and +
- the 45-degree directional birefringent plate 32a is provided at a position around the middle of the optical path between the CCD 8 and the lens 7, but is not limited to this. Alternatively, an arbitrary number of birefringent plates may be provided at arbitrary positions to separate light in arbitrary directions. Industrial applicability
- the optical low-pass filter according to the present invention it is possible to facilitate the polishing of the birefringent wafer, and to eliminate or reduce the ratio of the chipped portion to the entire birefringent wafer to perform one-time production. To produce a large number of units and reduce production costs Can be.
- the birefringent wafer is formed by cutting the crystal ingot at an angle larger than 44.8 degrees with respect to its optical axis, so that the conventional cutting angle is 44.8 degrees.
- the processing work can be easily performed without worrying about material loss such as breakage of the birefringent wafer. Can be performed, and the production cost can be reduced.
- the cutting angle of the birefringent wafer is set to an angle larger than 44.8 degrees with respect to the optical axis of the crystal ingot, the area of the birefringent wafer can be increased even if the crystal ingot has not grown so large.
- the ratio of the chipped portion to the entire birefringent wafer becomes small, so that when dividing into a large number of optical low-pass filters, Production costs can be reduced by reducing the number of defective optical low-pass filters formed.
- the birefringent wafer moves the quartz ingot with respect to its optical axis.
- the thickness of the birefringent wafer can be increased, and the thickness can be easily adjusted to a preset thickness.
- the thickness of the optical low-pass filter is changed, and this change is performed.
- the cutting angle of the birefringent wafer is adjusted, and the thickness of the digital camera is conventionally reduced. Since it can be made the same as that of the digital camera, it is not necessary to change the optical path length in the digital camera only by setting the dimensions of the birefringent wafer, and the production cost can be reduced.
- the thickness of the optical low-pass filter is reduced to prevent an increase in production cost due to a design change of the imaging device itself. Is set in advance. Therefore, if the optical low-pass filter according to the present invention is used for the imaging device, the birefringent wafer becomes a quartz crystal. Since the ingot is formed by cutting the ingot at an angle larger than 44.8 degrees with respect to its optical axis, the separation width can be shortened without changing the thickness of the optical low-pass filter, and the number of pixels of the CCD is reduced. Can be accommodated.
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Abstract
Description
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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AU2003242203A AU2003242203A1 (en) | 2002-06-18 | 2003-06-05 | Optical low-pass filter |
JP2004513829A JPWO2003107073A1 (ja) | 2002-06-18 | 2003-06-05 | 光学ローパスフィルタ |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2002-177175 | 2002-06-18 | ||
JP2002177175 | 2002-06-18 |
Publications (1)
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WO2003107073A1 true WO2003107073A1 (ja) | 2003-12-24 |
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PCT/JP2003/007167 WO2003107073A1 (ja) | 2002-06-18 | 2003-06-05 | 光学ローパスフィルタ |
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JP (1) | JPWO2003107073A1 (ja) |
CN (1) | CN100498426C (ja) |
AU (1) | AU2003242203A1 (ja) |
TW (1) | TWI269067B (ja) |
WO (1) | WO2003107073A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007271900A (ja) * | 2006-03-31 | 2007-10-18 | Kyocera Kinseki Corp | 1/4波長板 |
US8514316B2 (en) | 2007-10-25 | 2013-08-20 | Nikon Corporation | Image device and optical device for providing dust removing capabilities |
Citations (3)
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JPH0943542A (ja) * | 1995-07-28 | 1997-02-14 | Daishinku Co | 光学ローパスフィルタの製造方法 |
JP2001221979A (ja) * | 2000-02-08 | 2001-08-17 | Daishinku Corp | 光学ローパスフィルタ用偏光解消板及びその偏光解消板を使用した光学ローパスフィルタ |
JP2001272632A (ja) * | 2000-01-21 | 2001-10-05 | Daishinku Corp | 偏光解消部材及び光学ローパスフィルタ用偏光解消部材並びにその偏光解消部材を使用した光学ローパスフィルタ |
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2003
- 2003-06-05 WO PCT/JP2003/007167 patent/WO2003107073A1/ja active Application Filing
- 2003-06-05 AU AU2003242203A patent/AU2003242203A1/en not_active Abandoned
- 2003-06-05 CN CNB038015099A patent/CN100498426C/zh not_active Expired - Fee Related
- 2003-06-05 JP JP2004513829A patent/JPWO2003107073A1/ja active Pending
- 2003-06-11 TW TW92115868A patent/TWI269067B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0943542A (ja) * | 1995-07-28 | 1997-02-14 | Daishinku Co | 光学ローパスフィルタの製造方法 |
JP2001272632A (ja) * | 2000-01-21 | 2001-10-05 | Daishinku Corp | 偏光解消部材及び光学ローパスフィルタ用偏光解消部材並びにその偏光解消部材を使用した光学ローパスフィルタ |
JP2001221979A (ja) * | 2000-02-08 | 2001-08-17 | Daishinku Corp | 光学ローパスフィルタ用偏光解消板及びその偏光解消板を使用した光学ローパスフィルタ |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007271900A (ja) * | 2006-03-31 | 2007-10-18 | Kyocera Kinseki Corp | 1/4波長板 |
US8514316B2 (en) | 2007-10-25 | 2013-08-20 | Nikon Corporation | Image device and optical device for providing dust removing capabilities |
Also Published As
Publication number | Publication date |
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CN100498426C (zh) | 2009-06-10 |
TWI269067B (en) | 2006-12-21 |
JPWO2003107073A1 (ja) | 2005-10-13 |
AU2003242203A1 (en) | 2003-12-31 |
TW200402546A (en) | 2004-02-16 |
CN1592865A (zh) | 2005-03-09 |
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