WO2003100838A1 - Dispositif d'alignement de projection de balayage et procede d'alignement - Google Patents

Dispositif d'alignement de projection de balayage et procede d'alignement Download PDF

Info

Publication number
WO2003100838A1
WO2003100838A1 PCT/JP2003/006342 JP0306342W WO03100838A1 WO 2003100838 A1 WO2003100838 A1 WO 2003100838A1 JP 0306342 W JP0306342 W JP 0306342W WO 03100838 A1 WO03100838 A1 WO 03100838A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
wafer
substrate
exposure
reticle
Prior art date
Application number
PCT/JP2003/006342
Other languages
English (en)
Japanese (ja)
Inventor
Yuichi Shibazaki
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2004508395A priority Critical patent/JPWO2003100838A1/ja
Priority to AU2003242368A priority patent/AU2003242368A1/en
Publication of WO2003100838A1 publication Critical patent/WO2003100838A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device, a liquid crystal display device, an image pickup device (CCD, etc.), a thin film magnetic head, or the like by using a photolithographic process to form a pattern on a mask through a projection optical system.
  • the present invention relates to a scanning exposure apparatus and a scanning exposure method used for exposing a substrate.
  • the present invention is particularly suitable for a scanning exposure apparatus and a scanning exposure method in which a substantial illumination area on a mask is not rotationally symmetric with respect to the optical axis of the projection optical system.
  • a substantially square illumination area is set on a reticle as a mask, and a pattern in the illumination area is used as a photosensitive substrate via a projection optical system.
  • a batch exposure type projection exposure apparatus such as a stepper for exposing on a wafer (or a glass plate or the like) has been widely used.
  • a slit-shaped illumination area such as a rectangle or an arc is set on the reticle, and the pattern in the illumination area is projected onto the wafer via the projection optical system, and the reticle and the wafer are projected.
  • This scanning exposure type projection exposure apparatus exposes the slit-shaped exposure area almost inscribed in the effective exposure field of the projection optical system while scanning the wafer, so that the effective exposure field of the projection optical system
  • the length of the transfer pattern in the scanning direction can be longer than the diameter of the effective exposure field, resulting in the transfer of a large area reticle pattern onto the wafer with small aberrations. it can.
  • an illumination area that is not rotationally symmetric with respect to the optical axis of a projection optical system is set on a reticle during exposure. Therefore, even if the rate of absorption of the irradiation energy of the glass material constituting the lens of the projection optical system is small, a temperature distribution of the lens is generated due to the heat absorbed by the irradiation energy.
  • the lens thermally deforms non-rotationally symmetrically due to the temperature distribution of the lens, and the refractive index distribution of the glass material changes non-rotationally symmetrically due to a partial temperature rise. Thereby, the aberration of the projection optical system fluctuates.
  • i-line with a wavelength of 365 nm is mainly used as the illumination light for exposure using an ultra-high pressure mercury lamp as a light source, but recently, a wavelength in the far ultraviolet region shorter than the i-line is 248 ! 1 1113 ⁇ 4: F excimer laser light is being used, and the use of ArF excimer laser light with a wavelength of 193 nm is also being studied.
  • pulse laser light The lens of the projection optical system of a projection exposure system that uses such pulsed laser light (hereinafter referred to as “pulse laser light”) is irradiated with pulsed laser light at a high frequency, and only the irradiated part has a transmittance. Occurs. A phenomenon in which the refractive index increases only in the part of the lens that is irradiated with the pulsed laser light also occurs.
  • Such a change in the refractive index is caused by a chemical change in the glass, and a partial increase in the non-rotationally symmetric distribution of the refractive index of the lens is extremely bad particularly for the aberration of the projection optical system. affect. If the temperature distribution of the lens occurs in a non-rotationally symmetric distribution, it will cause a local increase in the temperature distribution in the lens, and as a result, the lens will be non-rotationally symmetrically thermally deformed, and further adversely affect the aberration. Become. An increase in temperature also causes an increase in the refractive index of the lens, which also adversely affects the aberration of the projection optical system.
  • conventional exposure equipment controls the pressure of the gas in contact with the lens in the projection optical system.
  • the aberration fluctuation of the projection optical system was corrected by moving or moving a part of the lens constituting the projection optical system.
  • the degree of non-rotational symmetry of the illumination area was low, so that aberration variation could be sufficiently corrected.
  • an illumination area on the reticle is slit-shaped such as a rectangle or an arc as in a scanning exposure type projection exposure apparatus, an illumination area that is not rotationally symmetrical with respect to the optical axis is used.
  • correction is made by applying non-rotationally symmetric external forces on the optical axis from two directions to the side surface of a given part of a certain lens in the projection optical system, and deforming that lens.
  • correcting the lens by deforming it with external force requires a considerable amount of pressure, which is not practical. For this reason, aberration fluctuations due to the slit-shaped illumination area cannot be completely canceled by deformation due to external force.
  • the scanning exposure is performed in a state where the aberration cannot be corrected, it is difficult to maintain the uniformity of the pattern line width, and the defect rate of the produced device may increase.
  • the present invention has been made in consideration of the above points, and suppresses non-rotationally symmetric aberrations generated in a projection optical system when a pattern on a reticle is transferred onto a wafer via a projection optical system. It is an object of the present invention to provide a scanning type exposure apparatus and a scanning type exposure method which can be performed. Disclosure of the invention
  • the scanning exposure apparatus of the present invention projects a mask pattern image onto a substrate via a projection optical system by synchronously moving the mask and the substrate in a first direction with respect to exposure light.
  • This apparatus includes a changing device for changing the setting of the exposure light irradiation area on the mask, and a changing device for the exposure light.
  • a switching device for switching the direction of synchronous movement between the mask and the substrate to a second direction different from the first direction in accordance with a change in the irradiation area.
  • the mask and the substrate are synchronously moved with respect to the exposure light in a first direction, and a pattern image of the mask is projected on the substrate via a projection optical system.
  • This method includes a step of changing the setting of the exposure light irradiation area on the mask, and a method of changing the direction of the synchronous movement between the mask and the substrate from the first direction in accordance with the change of the exposure light irradiation area. Switching the direction.
  • the illumination area with respect to the mask is changed at an arbitrary timing, and the synchronous movement direction between the mask and the substrate is switched according to the changed illumination area.
  • the direction (area) of illuminating the optical element of the optical system can be changed. Therefore, the non-rotational symmetry of the temperature distribution of the optical element due to the absorption heat of the irradiation energy can be reduced, and the non-rotational symmetry aberration caused by the temperature change can be suppressed.
  • the present invention by suppressing non-rotationally symmetric aberrations generated in the projection optical system in this way, it is possible to maintain excellent imaging characteristics, and have a uniform and desired line width on the substrate.
  • a highly integrated device can be manufactured by forming a fine pattern, and device defects caused by non-rotationally symmetric aberrations can be reduced.
  • the time required for substrate replacement alignment can be omitted, which can contribute to an improvement in throughput.
  • FIG. 1 is a schematic configuration diagram of a scanning exposure apparatus according to the present invention.
  • 2A to 2C are plan views of the reticle blind.
  • FIG. 3 is a schematic configuration diagram of a plane motor included in the traveling type exposure apparatus.
  • FIG. 4 is a control block diagram of the exposure apparatus.
  • FIG. 5 is a flowchart showing an embodiment of the present invention.
  • FIG. 6 is a diagram showing the second embodiment of the present invention, and is a plan view in which two wafer stages are provided.
  • FIG. 7 is a flowchart illustrating an example of a semiconductor device manufacturing process. BEST MODE FOR CARRYING OUT THE INVENTION
  • This embodiment is a step-and-scan scanning method in which a pattern on a reticle is sequentially transferred and exposed to each shot area on the wafer by scanning the reticle and wafer synchronously with respect to a projection optical system.
  • This is an example in which the present invention is applied to a ⁇ -type exposure apparatus and a scanning-type exposure method.
  • FIG. 1 shows a schematic configuration of a scanning exposure apparatus of the present embodiment.
  • the illumination optical system 1 includes a light source, an optical integrator (for example, an open lens or a fly-eye lens) for uniforming the illuminance distribution on the reticle, a reticle blind, a condenser lens, and the like.
  • the illumination light (exposure light) emitted from the illumination optical system 1 forms a slit-shaped illumination area on the pattern formation surface (lower surface) of the reticle (mask) 2 set by the reticle blind (change device) RB. Illuminate with a uniform illuminance distribution.
  • the pattern in the illumination area on the reticle 2 is inverted at a projection magnification (/ 3 is, for example, 1/4) through the projection optical system PL to form a slit on the wafer (substrate) 6.
  • the image is projected on the exposure area.
  • the illumination light K r F excimer laser light, or A r F E key Shimareza light, F 2 laser beam, harmonics of a copper vapor laser or YAG laser, or an ultra-high pressure mercury lamp bright line (g-line, i-line, etc.) are used.
  • the reticle blind RB has two L-shaped movable blades 11 and 12 and an actuator 13 that drives the movable blades.
  • the two movable blades 11 and 12 are arranged near a shared surface optically conjugate to the reticle 2 and the wafer 6, and are controlled by the main control system 20 (see FIG. 4).
  • the position and size of the rectangular illumination area of the illumination light on the reticle R are variably set on the XY plane by moving independently of each other in a plane orthogonal to the optical axis of the illumination light by the drive of 13. You can use four I-shaped movable blades.
  • the reticle 2 is connected to a reticle holder as a holding unit via a reticle holder (not shown).
  • (Mask stage) 3 The reticle stage 3 is supported above the reticle base (base) 4 in a plane (XY plane) perpendicular to the optical axis, and is supported two-dimensionally in the XY plane by driving a plane motor described later.
  • the reticle 2 is moved and positioned, and is movable at a predetermined scanning speed.
  • the reticle stage 3 has such a stroke that at least the entire pattern area of the reticle 2 can cross the illumination area in each of the X and Y scanning directions.
  • moving mirrors 5X and 5Y that reflect the laser beam from the laser interferometer 21 are fixed along the Y and X directions, respectively.
  • the position of the reticle stage 3 in the X and Y directions is constantly monitored by the laser interferometer 21.
  • the position information of the reticle stage 3 from the laser interferometer 21 is supplied to the main control system 20. Based on the position information, the main control system 20 passes through a drive system (not shown) on the reticle base 4. Controls the position and speed of the reticle stage 3.
  • the wafer 6 is held and mounted on a wafer stage (substrate stage) 7 as a holding unit via a wafer holder (not shown).
  • the wafer stage 7 is supported while floating above the wafer base (base) 8 in a plane (XY plane) perpendicular to the optical axis, and moves two-dimensionally in the XY plane ⁇ by driving a plane motor described later.
  • the wafer 6 is positioned and can be moved at a predetermined scanning speed.
  • a step-and-scan operation is repeated in which the wafer stage 7 repeats the operation of scanning exposure to each shot area on the wafer 6 and the operation of stepping to the next exposure start position.
  • the wafer 6 can be moved in the Z direction by the wafer stage 7 and tilted with respect to the XY plane.
  • movable mirrors 9X and 9Y for reflecting a laser beam from an external laser interferometer 22 are fixed along the Y and X directions, respectively.
  • the position of wafer stage 7 (wafer 6) is constantly monitored by laser interferometer 22.
  • the position information of the wafer stage 7 from the laser interferometer 22 is sent to the main control system 20, and the main control system 20 determines the position and speed of the wafer stage 7 via a plane motor based on the position information. Controlling.
  • the reticle 2 moves in the + Y direction (or For example, in synchronization with scanning at the speed VR, the shot area to be exposed on the wafer 6 moves in the one Y direction (or + Y direction) at a speed VW with respect to the exposure area. Is done.
  • the ratio between the scanning speed VR and the speed VW (VW / VR) is exactly the same as the projection magnification of the projection optical system PL, whereby the pattern image on the reticle 2 is It is accurately transferred to each shot area.
  • FIG. 3 is a schematic configuration diagram of the planar motors (driving devices) 3M and 7M used in the reticle stage 3 and the wafer stage 7, respectively. Since the configuration of the planar motors 3M and 7M in both stages 3 and 7 is the same, only the reference numerals are used for the planar motor 3M for the reticle stage 3, and only the planar motor 7M for the wafer 7 is described below. explain.
  • the planar motor 7M shown in this figure drives the wafer stage 7 using electromagnetic force (Lorentz force), and includes a magnet array 24 and a coil array 26.
  • the magnet array 24 is arranged adjacent to the coil array 26, supplies a permanent magnetic field that interacts with the current distribution of the coil array 26, and provides a thrust between the magnet array 24 and the coil array 26.
  • the interaction between the magnetic field and the current distribution enables one of the magnetic array 24 and the coil array 26 to move relative to the other in at least three and preferably six degrees of freedom.
  • the current in coil array 26 can interact with the magnetic field from magnet array 24 to produce forces in the X, Y, and ⁇ directions, and torque around the X, ⁇ , and ⁇ axes. it can.
  • the magnet array 24 is attached to the wafer stage 7 and moves with the wafer stage 7 relatively to the stationary coil array 26.
  • Such a configuration in which the magnet moves is preferable to a configuration in which the coils move, since the magnet array 24 does not require a current connection.
  • cooling tubes (not shown) are attached to the coil array 26, but electrical connections and cooling tubes may interfere with the movement of the coil array 26.
  • a configuration in which the coil array 26 is attached to the wafer stage 7 and is relatively moved with respect to the fixed magnet array 24 is also possible.
  • the coil array 26 is used to move the wafer stage 7 along the X axis.
  • a Y-coil array 52 for moving the wafer stage 7 along the Y-axis.
  • a rectifying circuit and a current source (not shown) supply two-phase, three-phase, or multi-phase rectified current to the X coil array 50 to apply a thrust in the X-axis direction to the wafer stage 7. .
  • a current rectified into two phases, three phases, or multiple phases is supplied to the Y coil array 52 by a rectifier circuit and a current source.
  • Rectified currents are individually supplied to coils 54 in X coil array 50 to provide rotation to wafer stage 7 in an XY plane parallel to the X and Y axes.
  • the current may be supplied to all the coils 54 of the X coil array 50 individually and in opposite polarities. In this case, one coil is supplied with force in one direction, and the other coil is supplied with force in the opposite direction, thereby generating a torque around the Z axis.
  • the driving of the planar motors 3M and 7M including the rectifier circuit and the current source is controlled by the main control system 20, and the switching device according to the present invention is controlled by the planar motors 3M and 7M and the main control system 20. Is composed.
  • the X coil array 50 is oriented so that the coil 54 becomes the major axis in a direction perpendicular to the X axis
  • the Y coil array 52 is oriented so that the coil 56 becomes the major axis in the direction perpendicular to the Y axis.
  • each coil 54, 56 produces a substantially constant thrust along each of the X or Y directions.
  • a coil 56 placed directly below the magnet array 24 and the wafer stage 7 is excited.
  • the magnet array 24 and the coil 54 placed directly below the wafer stage 7 are excited to generate a thrust in the X direction.
  • either a coil 54, 56 or a coil array 52, 54, or both the X and Y coil arrays are selectively energized.
  • FIG. 4 is a block diagram showing a main configuration of a control system of the exposure apparatus according to the present embodiment.
  • This control system is mainly composed of a main control system 20 composed of a microcomputer (or a workstation). As shown in this figure, the measurement results of the laser interferometers 21 and 22 are output to the main control system 20.
  • the main control system 20 includes the reticle laser interferometer system 21 and the wafer laser interferometer system 2
  • the drive of the planar motors 3M and 7M is controlled based on the measurement result of 2, and the drive of the actuator 13 is controlled based on the recipe (exposure data).
  • Step S 1 When the exposure process starts (Step S 0), the wafer 6 coated with the resist is transferred onto the wafer stage 7 (Step S 1) 0
  • Step S 2 the reticle 2 on the reticle stage 3 is moved. Align with the coordinate system (projection optical system PL).
  • the reticle alignment in step S2 may be performed anywhere after the reticle exchange processing until the completion of the wafer transfer processing. '
  • the main control system 20 drives the movable blades 11 and 12 via the actuator 13 to perform scanning exposure in the Y-axis direction (first direction).
  • a rectangular illumination area (irradiation area) SY extending in the X-axis direction is set (step S3).
  • the width of the rectangular illumination area in the Y-axis direction is set to be smaller than the width in the X-axis direction.
  • the exposure apparatus performs a wafer alignment in step S5 to perform alignment between the reticle 2 and the wafer 6.
  • the projection optical system PL is adjusted based on the EGA parameters (scaling parameters) calculated based on the wafer alignment mark position information measured by an alignment system (not shown). Adjust the imaging characteristics such as the projection magnification of.
  • the wafer 6 is positioned at the scanning exposure start position according to the position information (coordinate value) of each shot on the wafer 6 calculated based on the above-mentioned EGA parameters and the design coordinate value of each shot.
  • the scanning exposure of the reticle 2 and the wafer 6 is performed by driving the planar motors 3 M and 7 M to synchronously move the reticle stage 3 and the wafer stage 7 in the Y-axis direction with respect to the illumination area SY ( Step S7).
  • the projection optical system PL optical element constituting the projection optical system
  • the illumination light is applied to a range corresponding to the illumination area SY, and is formed on the reticle 2 on a predetermined shot area.
  • the resulting pattern is projected 'transferred.
  • step S8 it is determined whether or not the exposure processing has been completed in the exposure of this shot area. If the exposure processing has been completed, the processing is terminated (step S11). It is determined whether the exposure process for the wafer 6 being processed is completed and the wafer is replaced (step S 9). If the exposure process for another shot region remains, the exposure process is performed for all the shot regions. The sequence of the above steps S7 to S9 is sequentially repeated until the process is performed.
  • step S9 the process returns to step S1 to perform wafer transfer (unloading and loading), and changes the mounting direction of the reticle 2 in step S10.
  • the reticle 2 placed on the reticle stage 3 in response to the synchronous movement in the Y-axis direction is moved to the reticle stage 3 in order to correspond to the synchronous movement in the X-axis direction (second direction).
  • ° Rotate and place This change of the mounting direction is performed, for example, by detaching the reticle 2 from the reticle stage 3 by using a reticle transport device (not shown), and then setting the reticle 2 to 90. After rotation, a method of mounting the reticle on the reticle stage 3 again can be adopted.
  • the reticle 2 mounting direction can be changed before or after wafer transport if it is before the reticle alignment.
  • step S3 the main control system 20 drives the movable blades 11 and 12 via the actuator 13 and the X-axis
  • the setting is changed to a rectangular illumination area SX extending in the Y-axis direction as shown in FIG. 2C.
  • the rectangular illumination area is set to have a smaller width in the X-axis direction than in the Y-axis direction.
  • step S7 in response to the exchange of the wafer 6, the main control system 20 controls the driving of the planar motors 3M and 7M as a control device and a change device, thereby causing the reticle stage 2 and the wafer Change and switch the direction of synchronous movement with Tage 7 to X axis. That is, in the present embodiment, the main control system 20 alternately changes / switches the synchronous movement direction according to the number of processed wafers (here, each time the wafer is replaced).
  • the illumination light is applied to an area corresponding to the illumination area SX different from the illumination area SY, and the predetermined light is projected onto the reticle 2 on a predetermined shot area.
  • the pattern formed on is projected and transferred.
  • the illumination area and the synchronous movement direction are switched each time the wafer is replaced. Therefore, when the illumination area of the illumination light to the projection optical system PL is considered on a time average basis, the illumination areas SY and SX are combined. Can be made equivalent to a cross shape.
  • the heat of absorption of the irradiation energy in the optical element of the projection optical system PL can be dispersed, and the non-rotational symmetry of the temperature distribution of the optical element due to the heat of absorption can be reduced.
  • the present embodiment by suppressing non-rotationally symmetric aberrations generated in the projection optical system PL, it is possible to maintain excellent imaging characteristics, and achieve a uniform and desired line width on the wafer 6. It is possible to manufacture a highly integrated device by forming a fine pattern having a pattern, and reduce device defects due to non-rotationally symmetric aberrations.
  • FIG. 6 is a diagram showing a scanning exposure apparatus according to a second embodiment of the present invention.
  • the same elements as those of the first embodiment shown in FIGS. 1 to 5 are denoted by the same reference numerals, and description thereof will be omitted.
  • the difference between the second embodiment and the first embodiment is the configuration of the reticle stage 2, the wafer stage 7, and the configuration of the motor that drives these stages. Since the configurations of reticle stage 2 and wafer stage 7 are the same, only wafer stage 7 will be described below.
  • a wafer stage (holding unit) 7 Y which is supported above the wafer base 8 while floating above the wafer base 8 and synchronously moves and scans in the Y-axis direction, A wafer stage (holding unit) 7X that moves synchronously and runs is provided.
  • the wafer stage 7 ⁇ is movably supported by an X guide 31 extending in the X direction, and is moved in the X direction by driving the X linear motors 32, 32 using the X guide 31 as a guide.
  • a mover 33 is provided at one end of X guide 3 1 .
  • the mover 33 moves relative to a stator 34 provided on one side edge of the wafer base 8 along the Y direction.
  • the mover 33 and the stator 34 constitute a Y linear motor 35.
  • the wafer stage 7X is movably supported by a Y guide 41 extending in the Y direction, and is driven by the Y linear motors 42 and 42 so that the Y guide 41 guides the Y guide 41 to move in the Y direction. Go to At one end of Y guide 41. Mover 4 03 06342
  • the mover 43 moves relative to the stator 44 installed on one side edge of the wafer base 8 along the X direction.
  • the mover 43 and the stator 44 constitute an X linear motor 45.
  • Each of the wafer stages 7X and 7Y is set to be movable to a position directly below the projection optical system PL, and when the other stage moves to a position directly below the projection optical system PL, the other stage and the linear stage are moved. It is configured to be able to retreat to a position that does not interfere with the motor and guide.
  • the retracted position of each wafer stage is set to an alignment position by an alignment system (not shown). Other configurations are the same as those of the first embodiment.
  • the reticle 2 and the wafer 6 are moved by driving the ⁇ linear motor 35 to move the wafer stage 7Y in the Y-axis direction. Scanning exposure is performed by synchronously moving in the Y-axis direction. Then, when the exposure processing of the wafer held on the wafer stage 7Y is completed, the exposure processing is continuously performed on the wafer held on the wafer stage 7X. That is, by moving the wafer stage 7X in the X-axis direction by driving the X linear motor 45 while the wafer stage 7Y is retracted with respect to the wafer stage 7X, the reticle 2 and the wafer 6 are moved.
  • the illumination area is also switched by the movable blades 11 and 12 in accordance with the switching of the synchronous movement direction, and the reticle is also synchronized with the movement of the wafer by a not-shown remorse motor (which is different from the wafer 6). Move in the opposite direction). At the retracted wafer stage, wafer replacement, wafer alignment, etc. are performed.
  • the illumination area is changed according to the number of processed wafers (here, each time the wafer is replaced), and the wafer stage used for scanning exposure is switched for each wafer.
  • the absorption heat of the irradiation energy in the optical element of the projection optical system PL can be dispersed, so that the same effects as those of the first embodiment can be obtained. Time can be saved, which can contribute to an improvement in throughput.
  • both the reticle stage and the wafer stage are driven by the planar motor or the linear motor.
  • the present invention is not limited to this.
  • a configuration may be adopted in which one of the reticle stage and the wafer stage is driven by a planar motor, and the other is driven by a linear motor.
  • the illumination area and the synchronous movement direction are switched every time the wafer is exchanged at a predetermined timing.
  • the procedure is switched every time a plurality of wafers are exchanged, or every predetermined time elapses.
  • the switching may be performed based on the incident history (for example, the incident time) of the illumination light incident on the projection optical system.
  • a light quantity detector may be arranged in the illumination light path to monitor the integrated light quantity. It is also possible to switch the illumination area and the synchronous movement direction every time the integrated light amount exceeds a predetermined amount.
  • the illumination area and the synchronous movement direction are switched in the X-axis direction and the Y-axis direction, which are substantially orthogonal to each other, so that the configuration can be easily dealt with by a normally used linear motor. Instead, they may be moved synchronously in an oblique direction.
  • the synchronous movement direction By setting the synchronous movement direction to multiple directions in this way, the heat of absorption of irradiation energy in the optical element of the projection optical system PL can be further dispersed, and the non-rotational symmetry of the temperature distribution of the optical element can be reduced. It is possible to further ease.
  • the irradiation area is not limited to a rectangle, and may be an arc-shaped area.
  • the substrate of the present embodiment includes not only a semiconductor wafer 6 for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin-film magnetic head, or an original mask or reticle used in an exposure apparatus (synthesis). Quartz, silicon wafer, etc. are applied.
  • a step of scanning and exposing the pattern of the reticle R by synchronously moving the reticle R and the wafer W and a scanning type exposure apparatus of the scan type (scanning stepper; USP5,473,410).
  • the reticle R and the wafer W are stationary, the pattern of the reticle R is exposed, and the wafer W is sequentially step-moved.
  • a projection exposure apparatus stepper
  • the present invention can also be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially overlapped and transferred on a wafer W.
  • a semiconductor element for exposing a semiconductor element pattern It is not limited to an exposure apparatus for manufacturing a device, but also an exposure apparatus for manufacturing a liquid crystal display element or a display, an exposure apparatus for manufacturing a thin B-magnet magnetic head, an imaging device (CCD), a reticle or a mask, and the like. Widely applicable.
  • Light source g-line (436 nm), h-line (404 nm), i-if spring (365 nm)), KrF excimer laser (248 nm), ArF excimer laser (1 93 nm), F 2 laser (1 57 nm), not only a r 2 laser (1 2 6 nm), as possible out using a charged particle beam such as an electron beam or an ion beam.
  • a charged particle beam such as an electron beam or an ion beam.
  • thermionic emission type Kisaborai bets to lanthanum (L a B 6) can be used tantalum (T a).
  • a harmonic such as a YAG laser or a semiconductor laser may be used.
  • a single-wavelength laser in the infrared or visible range oscillated by a DFB semiconductor laser or fiber laser is amplified by a fiber amplifier doped with erbium (or both erbium and yttrium), and a nonlinear optical crystal is amplified.
  • a harmonic converted to ultraviolet light may be used as exposure light.
  • the oscillation wavelength of the single-wavelength laser is in the range of 1.544 to 1.553 m
  • the 8th harmonic in the range of 193 to 194 ⁇ m that is, the ultraviolet that has almost the same wavelength as the ArF excimer laser If light is obtained and the oscillation wavelength is in the range of 1.57 to 1.58 ⁇
  • the 10th harmonic in the range of 157 to 158 nm that is, ultraviolet light that has almost the same wavelength as the F 2 laser Light is obtained.
  • a laser plasma light source or a soft X-ray region having a wavelength of about 5 to 5 O nm generated from an SOR, for example, EUV (Extreme Ultra Violet) light having a wavelength of 13.4 nm or 11.5 nm is used as exposure light.
  • EUV Extreme Ultra Violet
  • the EUV exposure apparatus uses a reflective reticle, and the projection optical system is a reduction system including only a plurality of (eg, about 3 to 6) reflective optical elements (mirrors).
  • the projection optical system PL may be not only a reduction system but also an equal magnification system or an enlargement system. Further, the projection optical system PL may be any of a refractive system, a reflective system, and a catadioptric system. When the wavelength of the exposure light is less than about 200 nm, it is desirable to purge the optical path through which the exposure light passes with a gas that absorbs less exposure light (an inert gas such as nitrogen or helium). When an electron beam is used, an electron lens and a deflection An electron optical system consisting of a vessel may be used. The optical path through which the electron beam passes is evacuated.
  • each of the stages 3 and 7 may be of a type that moves along a guide or a guideless type that does not have a guide.
  • the reaction force generated by the movement of the wafer stage 7 is not transmitted to the projection optical system PL as described in Japanese Patent Application Laid-Open No. Hei 8-166475 (US Pat. No. 5,528,118). It may be used to mechanically escape to the floor (ground).
  • the reaction force generated by the movement of the reticle stage 3 is not transmitted to the projection optical system PL, as described in JP-A-8-330224 (US S / N 08 / 416,558). Alternatively, it may be mechanically released to the floor (ground) using a frame member.
  • the exposure apparatus performs various subsystems including each component listed in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. It is manufactured by assembling. To ensure these various precisions, before and after this lamination, adjustments to achieve optical precision for various optical systems, adjustments to achieve mechanical precision for various mechanical systems, Various electrical systems are adjusted to achieve electrical accuracy.
  • the process of assembling the exposure apparatus from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an individual assembly process for each subsystem before the assembly process from these various subsystems to the exposure apparatus.
  • step 201 for designing the function and performance of the microdevice step 202 for fabricating a mask (reticle) based on this design step, and silicon material Step of manufacturing wafer from wafer 203.
  • the reticle pattern is It is manufactured through an exposure processing step 204 for exposing to light, a device assembling step (including a dicing step, a bonding step, and a package step) 205, and an inspection step 206.
  • the present invention by suppressing non-rotationally symmetric aberrations generated in the projection optical system, it is possible to maintain excellent imaging characteristics, and have a uniform and desired line width on the substrate.
  • a highly integrated device can be manufactured by forming a fine pattern, and device defects due to non-rotationally symmetric aberrations can be reduced.
  • the time required for substrate exchange / alignment can be omitted, which can contribute to an improvement in throughput.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un dispositif d'alignement de projection de balayage servant à projeter l'image à motif d'un masque (2) sur un substrat (6) à l'aide d'un système optique de projection PL par déplacement du masque (2) et du substrat de manière synchrone dans une première direction par rapport à une lumière d'exposition. Le dispositif d'alignement comprend une unité RB de modification des paramètres de la zone d'irradiation de la lumière d'exposition sur le masque (2), et une unité de commutation de la direction de mouvement synchrone du masque (2) et du substrat (6) sur une seconde direction différente de la première direction lorsque la zone d'irradiation de la lumière d'exposition est modifiée. Le dispositif d'alignement permet de contrôler une aberration symétrique non rotationnelle se produisant dans le système optique de projection lorsqu'un motif d'un réticule est transféré sur une tranche par l'intermédiaire du système optique de projection.
PCT/JP2003/006342 2002-05-23 2003-05-21 Dispositif d'alignement de projection de balayage et procede d'alignement WO2003100838A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004508395A JPWO2003100838A1 (ja) 2002-05-23 2003-05-21 走査型露光装置および走査型露光方法
AU2003242368A AU2003242368A1 (en) 2002-05-23 2003-05-21 Scanning projection aligner and aligning method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002149732 2002-05-23
JP2002-149732 2002-05-23

Publications (1)

Publication Number Publication Date
WO2003100838A1 true WO2003100838A1 (fr) 2003-12-04

Family

ID=29561217

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/006342 WO2003100838A1 (fr) 2002-05-23 2003-05-21 Dispositif d'alignement de projection de balayage et procede d'alignement

Country Status (4)

Country Link
JP (1) JPWO2003100838A1 (fr)
AU (1) AU2003242368A1 (fr)
TW (1) TW200400545A (fr)
WO (1) WO2003100838A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120019A (ja) * 1987-11-02 1989-05-12 Nec Corp 半導体装置のパターン形成方法
JPH06151273A (ja) * 1992-11-12 1994-05-31 Nikon Corp 投影露光装置
JPH11288880A (ja) * 1998-03-06 1999-10-19 Siemens Ag スキャン・タイプ露光システムとそのスキャン方向制御方法
WO2000011707A1 (fr) * 1998-08-24 2000-03-02 Nikon Corporation Procede et appareil d'exposition a un balayage, et micro-dispositif
WO2000046911A1 (fr) * 1999-02-04 2000-08-10 Nikon Corporation Dispositif a moteur plat et procede d'entrainement correspondant, unite d'activation et procede d'entrainement correspondant, appareil d'exposition et procede correspondant et dispositif avec procede de fabrication correspondant
JP2001203140A (ja) * 2000-01-20 2001-07-27 Nikon Corp ステージ装置、露光装置及びデバイス製造方法
US6335785B1 (en) * 1998-03-12 2002-01-01 Fujitsu Limited Scan-type reducing projection exposure method and apparatus

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120019A (ja) * 1987-11-02 1989-05-12 Nec Corp 半導体装置のパターン形成方法
JPH06151273A (ja) * 1992-11-12 1994-05-31 Nikon Corp 投影露光装置
JPH11288880A (ja) * 1998-03-06 1999-10-19 Siemens Ag スキャン・タイプ露光システムとそのスキャン方向制御方法
US6335785B1 (en) * 1998-03-12 2002-01-01 Fujitsu Limited Scan-type reducing projection exposure method and apparatus
WO2000011707A1 (fr) * 1998-08-24 2000-03-02 Nikon Corporation Procede et appareil d'exposition a un balayage, et micro-dispositif
WO2000046911A1 (fr) * 1999-02-04 2000-08-10 Nikon Corporation Dispositif a moteur plat et procede d'entrainement correspondant, unite d'activation et procede d'entrainement correspondant, appareil d'exposition et procede correspondant et dispositif avec procede de fabrication correspondant
JP2001203140A (ja) * 2000-01-20 2001-07-27 Nikon Corp ステージ装置、露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
TW200400545A (en) 2004-01-01
JPWO2003100838A1 (ja) 2005-09-29
AU2003242368A1 (en) 2003-12-12

Similar Documents

Publication Publication Date Title
JP6183418B2 (ja) 露光装置及びデバイス製造方法
KR100705497B1 (ko) 기판을 지지하거나 및/또는 열적으로 콘디셔닝하는 장치,방법, 지지테이블 및 척
CN110716396B (zh) 用于保持光刻设备的物体的卡盘和夹具和用于控制光刻设备的夹具保持的物体的温度的方法
US7292317B2 (en) Lithographic apparatus and device manufacturing method utilizing substrate stage compensating
US20090009742A1 (en) Optical element driving apparatus, barrel, exposure apparatus and device manufacturing method
US20080012511A1 (en) Planar Motor Device, Stage Device, Exposure Device and Device Manufacturing Method
JP2002208562A (ja) 露光装置及び露光方法
JP2005019628A (ja) 光学装置、露光装置、並びにデバイス製造方法
JP2005064391A (ja) 光学部材の冷却方法、冷却装置、露光装置、及び、デバイスの製造方法
US20030147155A1 (en) Optical element holding device
US7106413B2 (en) Cooling mechanism
WO1999036949A1 (fr) Procede d'exposition et systeme de lithographie, appareil d'exposition et son procede de fabrication
JP2005057289A (ja) リソグラフィ装置及びデバイスの製造方法
JP2001093808A (ja) 露光方法及び露光装置
JP2004246039A (ja) 保持装置、当該保持装置を有する露光装置、及びデバイス製造方法
US20100151394A1 (en) System for Contactless Cleaning, Lithographic Apparatus and Device Manufacturing Method
JP2000286191A (ja) 露光装置および露光方法ならびにデバイス製造方法
JP4018564B2 (ja) 光学系、及びそれを用いた露光装置、デバイスの製造方法
JP5644416B2 (ja) 光学ユニット、光学系、露光装置、及びデバイスの製造方法
JP5434498B2 (ja) 光学素子の保持装置、光学系、及び露光装置
WO2003100838A1 (fr) Dispositif d'alignement de projection de balayage et procede d'alignement
JP2005116849A (ja) 静電吸着装置及び方法、露光装置、デバイスの製造方法
CN113892061A (zh) 分裂式双面晶片和掩模板夹具
JP2008235470A (ja) 平面モータ装置、ステージ装置、露光装置及びデバイスの製造方法
JP2003031646A (ja) ステージ装置および露光装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2004508395

Country of ref document: JP

122 Ep: pct application non-entry in european phase