Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32458—Vessel
  • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
  • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Definitions

• the present invention relates to a plasma processing apparatus.
• a plasma processing apparatus for example, a plasma etching processing apparatus is used for performing fine processing of a surface of a semiconductor wafer or the like, which is an object to be processed in a semiconductor manufacturing process.
• a conventional plasma etching apparatus includes a processing vessel into which an etching reaction gas is introduced, and an upper electrode and a lower electrode as processing chamber components that are arranged in parallel in the processing chamber so as to face each other.
• a semiconductor wafer is arranged on the lower electrode, and the etching reaction gas is dissociated by plasma generated between the upper electrode and the lower electrode when excited by applying high-frequency power to the lower electrode. Then, the semiconductor wafer is etched by the radical component generated thereby.
• the lower electrode is made of aluminum
• the upper electrode is made of rubber.
• a 1 2 0 3 (alumina) manufactured by Sera Mi click, S i 0 2, Q z ( quartz), and C (carbon) or the like is used
• CF (fluorocarbon) -based gas is widely used as the processing gas introduced into the processing vessel.
• a CF-based polymer which is a by-product of the reaction due to the plasma treatment of the CF-based gas, is generated on the inner wall of the processing vessel and the surfaces of the processing chamber components.
• the inner wall of the processing vessel is heated to 200 to 300 ° C., or the inner wall of the processing vessel is removed to remove the deposited deposition.
• the frequency of regular cleaning was increased.
• heating the inner wall of the processing vessel to 220 to 300 ° C causes an increase in the size of the processing equipment due to the heat insulation structure, an increase in the amount of power used for heating, and an increase in cost. They have the problem that the frequency of regular cleaning increases the amount of labor and time it takes.
• An object of the present invention is to provide a plasma processing apparatus capable of reducing deposition of a CF polymer deposition in a processing chamber. Disclosure of the invention
• a plasma processing apparatus comprising: a processing container for exciting plasma therein to finely process a surface of an object to be processed; and a processing chamber component disposed inside the processing container. in the processing apparatus, least for the even one surface of the surface of the inner wall of the processing chamber and the processing chamber component surfaces straight connection Y 2 0 3 plasma processing apparatus which is coated with the sprayed film is provided in a predetermined area .
• the predetermined area is not less than a surface area S (m 2 ) satisfying the following expression.
• A is the gas flow rate (sccm) in the processing vessel
• t denotes the Y 2 0 3 of the sprayed coating thickness to (m).
• the predetermined area is preferably 0.65 m 2 or more.
• the predetermined area is more preferably 0.91 m 2 or more.
• the processing chamber component comprises an upper electrode or a lower electrode.
• the plasma processing apparatus according to the present invention is preferably used for a contact process.
• the plasma processing apparatus according to the present invention is more preferably used for a self-contact contact process.
• FIG. 1 is a diagram showing a schematic configuration of a plasma processing apparatus according to an embodiment of the present invention.
• Figure 2 is a graph showing the relationship between the front area and the CF-based gas flow rate of the inner wall 3 b of Y 2 0 3 sprayed coating 4 1 is coated in FIG.
• FIG. 3 is a graph showing the relationship between the number of particles in the processing chamber 2 in FIG. 1 and the high-frequency power application time by the high-frequency power supply 27.
• a processing container that excites plasma inside to finely process the surface of an object to be processed, and a processing chamber component disposed inside the processing container And at least one surface of the inner wall surface of the processing vessel and the surface of the processing chamber components has a predetermined area, preferably 0.65 m 2 or more, and more preferably. in 0s. 9 1 when m 2 or more to Wataru connexion Y 2 0 3 is coated with a thermally sprayed film, Upsilon 2 0 3 sprayed coating and can trigger reaction of CF-based poly mer, also I treatment chamber It has been found that deposition of CF-based polymer can be reduced.
• the present inventors when the surface of the upper electrode or the lower electrode are covered with Y 2 0 3 sprayed coating, can trigger effectively reacting Upsilon 2 0 3 sprayed coating and the CF-based poly mer Thus, it has been found that the deposition of CF-based polymer deposits in the processing chamber can be effectively reduced.
• the present invention has been made based on the results of the above research.
• FIG. 1 is a diagram showing a schematic configuration of a plasma processing apparatus according to an embodiment of the present invention.
• a plasma etching apparatus 1 includes a plasma processing vessel 3 having a large diameter at a lower part and a small diameter at an upper part to form a processing chamber 2 therein.
• An annular permanent magnet 4 is fitted on the upper part of the plasma processing vessel 3.
• the plasma processing container 3 has a downward concave portion 5 inside the top portion, and has an opening 12 at the center portion of the bottom portion.
• the plasma processing vessel 3, forming a two-layer structure of Arumai bets treated aluminum Niumu made of the outer wall 3 a, and A 1 2 0 3 canceler Mi click made of the inner wall 3 b.
• the concave portion 5 at the top is closed by an upper electrode 11 having a plurality of holes 10, and the opening 12 at the bottom is made of a conductive material such as stainless steel erected from the bottom. It is closed by the exhaust ring 16 etc. through the bellows 14 made of steel.
• the bellows 14 is fixed to the exhaust ring 16 so as to fit to the first bellows cover 15 erected at the bottom of the plasma processing vessel 3 and the first bellows force par 15. Protected by the second bellows cover 17 provided.
• the exhaust ring 16 has a lower electrode 21 in the center thereof, and the lower surface of the lower electrode 21 extends from below the plasma processing vessel 3 and is oxidized.
• a tubular member 22 made of a conductive material such as A1 and an elevating shaft 23 that is housed in the tubular member 22 and moves the lower electrode 21 up and down in the direction A in the figure are fixed.
• the lower electrode 21 has its lower surface and side surfaces protected by an electrode protection member 24, and the lower surface and side surfaces of the electrode protection member 24 are covered by a conductive member 25.
• a high-frequency power source 27 is connected to the elevating shaft 23 via a matching unit 26.
• An insulator ring 31 is arranged around the upper surface of the lower electrode 21, and an electrostatic chuck 32 is arranged on the upper surface of the lower electrode 21 inside the insulator ring 31. .
• a focusing ring 33 is disposed on the insulator ring 31, and a processed object is disposed on the electrostatic chuck 32 inside the focusing ring 33.
• a semiconductor device 34 as an object is mounted.
• the plasma processing vessel 3 has a gas supply port 51 at the top thereof, and the gas supply port 51 is used for supplying a processing gas into the processing chamber 2 via a flow control valve 52 and an on-off valve 53.
• a gas supply source 54 is connected, and an exhaust port 55 is provided at the bottom thereof.
• a vacuum pump 56 for evacuating the inside of the processing chamber 2 is connected to the exhaust port 55.
• the plasma processing container 3 further has, on the lower side thereof, an object transfer port 57 for carrying in and out the semiconductor wafers 34.
• the inner wall 3 b surface of the plasma processing vessel 3 and Y 2 0 3 sprayed coating 4 1 is coated, the Upsilon 2 0 3 sprayed coating 4 1 is grounded.
• the plasma etching apparatus 1 configured as described above has a drive (not shown).
• the position of the semiconductor wafer 34 is adjusted by moving the elevating shaft 23 in the direction of arrow A by the moving mechanism.
• a high frequency power of, for example, 13.56 MHz is applied to the lower electrode 21 by the high frequency power supply 27 via the elevating shaft 23.
• the pressure in the processing chamber 2 is reduced to a predetermined vacuum atmosphere by the vacuum pump 56, and a processing gas containing a CF-based gas is introduced into the processing chamber 2 from the gas supply source 54 through the gas supply port 51. Then, a glow discharge is generated between the upper electrode 11 and the lower electrode 21, and the processing gas is turned into plasma. As a result, the desired fine processing is performed on the masked semiconductor wafer 34.
• the solid particles are scattered CF-based poly mer generated from decomposed components of I that CF-based gas bra Zuma, the inner wall 3 b surface of the plasma processing vessel 3 Y 2 0 3 thermal spraying, coating 4 Since 1 is coated, deposition of the CF-based polymer on the inner wall 3b and the surface of the processing chamber component is prevented.
• Y 2 0 3 sprayed coating 4 1 details the suppressing mechanism deposition de Position emission of CF-based poly mer in the processing chamber 2.
• the CF 2 polymer to be deposited is represented by the following formula (1) ) Is generated as shown in (3).
• Ru can and this to reduce the deposition of Depojishi Yo emission of CF 2 poly mer in the inner wall 3 b ⁇ Pi processing chamber component .
• Figure 2 is a graph showing the relationship between the front area and the CF-based gas flow rate of the inner wall 3 b of Y 2 0 3 sprayed coating 4 1 is coated in FIG.
• the ratio of CF 2 poly mer is Depojisho in to Y 2 0 3 sprayed coating 4 1 (side wall 6 surface area of 0) Bruno ((upper and lower electrodes 1 1, 2 1 surface area) + (the side wall 6 0 represented by the surface area)), also 8% (which is the upper electrode 1 1 and the distance 2 0 mm lower electrodes 2 1) this and and Y 2 0 3 sprayed coating 4 1 of life with a minimum Y 2 0 for avoiding from the This 1 0 0 0 hours corresponding to the life of the components is also necessary with rather little of the side wall 6 0, the Depojisho emissions of CF 2 poly mer Te
• the molecular weight of Y 2 0 3 is about 2 2 and a 6 in which this need by weight of Y 2 0 3 sprayed coating 4 1 for avoiding Depojishi ® emission of CF 2 poly mer, 0.
• the surface area of the inner wall 3 b of Y 2 0 3 sprayed coating 4 1 is coated is not to preferable not less 0. 9 1 m 2 or more
• the inner wall 3 b of the processing chamber 2 is covered with Y 2 0 3 sprayed coating 4 1 healed in a wide area of realm to be exposed to the plasma, the inner wall 3 b Upsilon 2 0 3 sprayed coating 4 1 and CF-based poly Ma one and can trigger reactions, Ru can and this to reduce the Depojishi ® down the deposition of CF-based poly mer in even I processing chamber 2.
• the magnetic field assist type plasma etching apparatus 1 in which the permanent magnets 4 are arranged on the outer periphery of the plasma processing vessel 3 has been described as an example, but the present invention is not limited to this.
• the permanent magnet 4 instead of providing the permanent magnet 4, the same applies to an ion assist type plasma etching apparatus 1 that generates plasma by applying high frequency power to both the upper electrode 11 and the lower electrode 21. It goes without saying that it can be applied to
• the results of a comparative study of the relationship between the number of particles and the high-frequency power application time by the high-frequency power supply 27 are shown.
• FIG. 3 is a graph showing the relationship between the number of particles in the processing chamber 2 in FIG. 1 and the high-frequency power application time by the high-frequency power supply 27.
• line A is, if the conventional plasma etching apparatus, the broken line B, respectively in the case of a plasma etching apparatus 1 of the present invention Y 2 0 3 sprayed coating 4 1 is coated on the inner wall 3 b s Show.
• the number of particles increases rapidly with the application of the high-frequency power, and about 30 hours or 1 after 5 hours. Approximately 220 pieces after 0 hours, and about 330 pieces after 15 hours. No measurements have been taken after 15 hours, but are expected to increase further.
• the plasma etching apparatus 1 of the present invention can reduce the periodical cleaning interval from the conventional 30 hours to 15 hours because the deposition of the deposition in the processing chamber 2 is reduced. Can be extended to 0 hours.
• a turbo-molecular pump with a larger pumping speed and a larger pumping speed for example, a turbo-molecular pump with a pumping speed of 2.2 mVsec
• CF-based fine particles floating in the processing chamber 2 can be used. Deposition of degraded C0 etc. can be quickly discharged to the outside of the processing chamber 2 without staying in the processing chamber 2, so that the CF-based polymer in the processing chamber 2 can be discharged quickly. This can further reduce the accumulation of deposits.
• C 0 generated in the equation (4) is a CF-based gas generated by plasma. Inactivates the fluorine radical (F *) of the active species generated upon dissociation and improves the selectivity to SiN (silicon nitride) and the underlying Si (silicon).
• F * fluorine radical
• the predetermined area is 0.6 because it is 5 m 2 or more, to ensure the deposition of de Pojishi ® emission of CF-based poly mer in the process chamber when device for diameter 2 0 0 mm about the following of the object Can be reduced.
• the predetermined area to zero. 9 1 because it is m 2 or more, to ensure the deposition of de Pojishi ® emission of CF-based poly mer in the process chamber when device for diameter 3 0 0 mm about the following of the object It can be reduced.
• the processing chamber components upper electrode and least for the even formed Runode from one of the lower electrode, Y 2 0 3 sprayed coating and CF-based polymer and can trigger effectively react, CF in even I treatment chamber It is possible to effectively reduce the deposition of system polymer deposits. Further, since it is used for a contact process, it is possible to improve the selectivity to silicon nitride and base silicon.

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• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Plasma & Fusion (AREA)
• Chemical & Material Sciences (AREA)
• Analytical Chemistry (AREA)
• Drying Of Semiconductors (AREA)

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• 2002
  • 2002-03-11 JP JP2002065265A patent/JP2003264169A/ja active Pending
• 2003
  • 2003-03-10 AU AU2003221340A patent/AU2003221340A1/en not_active Abandoned
  • 2003-03-10 US US10/505,176 patent/US20050106869A1/en not_active Abandoned
  • 2003-03-10 WO PCT/JP2003/002773 patent/WO2003077300A1/ja not_active Ceased
  • 2003-03-10 CN CNB038057581A patent/CN100355039C/zh not_active Expired - Fee Related
  • 2003-03-10 KR KR10-2004-7013171A patent/KR20040103948A/ko not_active Ceased

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