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Definitions

• the present invention is directed to light emitting devices incorporating metal complexes for improved efficiency and stability.
• Electronic display cunently is a primary means for rapid delivery of information.
• OLEDs organic light emitting devices
• OLEDs are of considerable interest for their potential role in the development of full color, flat-panel display systems that may render obsolete the bulky cathode ray tubes still currently used in many television sets and computer monitors.
• OLEDs are comprised of several organic layers in which at least one of the layers can be made to electroluminesce by applying a voltage across the device (see, e.g., Tang, et al,Appl Phys. Lett.
• the cathode effectively reduces the adjacent organic layers (i.e., injects electrons) whereas the anode effectively oxidizes the adjacent organic layers (i.e., injects holes). Holes and electrons migrate across the device toward their respective oppositely charged electrodes. When a hole and electron meet on the same molecule, recombination is said to occur and an exciton is formed. Recombination of the hole and electron is preferably accompanied by radiative emission, thereby producing electroluminescence.
• the exciton which results from hole and electron recombination can have either a triplet or singlet spin state.
• Luminescence from a singlet exciton results in fluorescence whereas luminescence from a triplet exciton results in phosphorescence.
• Electro- phosphorescent OLEDs have now been show to have superior overall device efficiencies as compared with electro-fluorescent OLEDs (see, e.g., Baldo, et al, Nature, 1998, 395, 151 and Baldo, e.g., Appl Phys. Lett. 1999, 75(3), 4).
• OLEDs contain several thin organic layers between a hole injecting anode layer, comprising an oxide material such as indium-tin oxide (ITO), Zn-In-SnO 2 , SbO 2 , or the like, and an electron injecting cathode layer, comprising a metal layer such as Mg, Mg:Ag, or LiF:Al.
• HTL hole transporting layer
• ETL electrostatic transporting layer
• Alq 3 aluminum tris(8-hydroxyquinolate)
• the ETL and HTL are often refened to as carrier layers.
• an additional a layer may be present for enhancing hole or electron injection from the electrodes into the HTL or ETL, respectively.
• These layers are often refened to as hole injecting layers (HILs) or electron injecting layer (EIL).
• HIL hole injecting layers
• EIL electron injecting layer
• the HIL may be comprised of a small molecule such as 4,4',4"-tris(30methylphenylphenylamino)triphenylamine (MTDATA) or polymeric material such as poly(3,4-ethylenedioxythiophene) (PEDOT).
• the EIL may be comprised of a small molecule material such as, e.g., copper phthalocyanine (CuPc).
• OLEDs further comprise an emissive layer (EL), or alternatively termed, luminescent layer, situated between the ETL and HTL, where electroluminescence occurs. Doping of the luminescent layer with various luminescent materials has allowed fabrication of OLEDs having a wide variety of colors.
• EL emissive layer
• OLEDs have also been constructed with one or more blocking layers to help maximize efficiency. These layers serve to block the migration of holes, electrons, and/or excitons from entering inactive regions of the device.
• a blocking layer that confines holes to the luminescent layer effectively increases the probability that holes will result in a photoemissive event.
• Hole blocking layers desirably have a deep (i.e., low) HOMO energy level (characteristic of materials that are difficult to oxidize) and conversely, electron blocking materials generally have a high LUMO energy level.
• Exciton blocking materials have also been shown to increase device efficiencies.
• Triplet excitons which are relatively long-lived, are capable of migrating about 1500 to 2000 A, which is sometimes greater than the entire width of the device.
• An exciton blocking layer comprising materials that are characterized by a wide band gap, can serve to block loss of excitons to non-emissive regions of the device.
• Iridium-based and other metal-containing emitters have been reported in, e.g., Baldo, et al, Nature, 1998, 395, 151; Baldo, et al, Appl. Phys. Lett., 1999, 75, 4; Adachi, et al, Appl Phys. Lett., 2000, 77, 904; Adachi, et al, Appl. Phys. Lett., 2001, 78, 1622; Adachi, et al, Bull Am. Phys. Soc. 2001, 46, 863, Wang, et al, Appl Phys. Lett., 2001, 79, 449, and U.S. Pat. Nos.
• a metal-containing blocking layer has also been reported. Specifically, (1,1'- biphenyl)-4-olato)bis(2-methyl-8-quinolinolato Nl,O8)aluminum (BAlq) has been used as a blocking layer in the OLEDs reported in Watanabe, et al "Optimization of driving lifetime durability in organic LED devices using Ir complex," in Organic Light Emitting Materials and Devices IV, Kafafi, ed. Proceedings of SPIE Vol.4105, p. 175 (2001).
• OLEDs promise new technologies in electronic display, they often suffer from degradation, short life spans, and loss of efficiency over time.
• the organic layers can be ineversibly damaged by sustained exposure to the high temperatures typically encountered in devices. Multiple oxidation and reduction events can also cause damage to the organic layers. Consequently, there is a need for the development of new materials for the fabrication of OLEDs.
• Compounds that are stable to both oxidation and reduction, have high T g values, and readily form glassy thin films are desirable.
• the invention described hereinbelow helps fulfill these and other needs.
• the present invention provides light emitting devices comprising a hole transporting layer that includes at least one metal complex.
• the hole transporting layer consists essentially of said metal complex or complexes.
• the hole transporting layer comprises an organic matrix doped with said metal complex or complexes.
• the metal complex is coordinatively saturated, preferably wherein metal complex has a coordination number of four or six.
• the metal the said metal complex is a transition metal, which can be a first row, second row or third row transition metal.
• the metal of said metal complex is Fe, Co, Ru, Pd, Os or Ir, or any subcombination thereof.
• At least one metal complex has one of the formulas I or II:
• M' and M'" are each, independently, a metal atom
• R 10 , R 13 , R 20 and R 2 j are each, independently, N or CH
• R ⁇ and R 12 are each, independently, N, CH, O or S
• Ring systems A, B, G, K and L are each independently a mono-, di- or tricyclic fused aliphatic or aromatic ring system optionally containing up to 5 hetero atoms;
• Z is C,-C 6 alkyl, C 2 -C 8 mono- or poly alkenyl, C 2 -C 8 mono- or poly alkynyl, or a bond;
• Ring system B are each monocyclic.
• Ring system A is a five membered heteroaryl monocyclic ring and Ring system B is a six membered aryl or heteroaryl monocyclic ring.
• R 10 and R u are N, and R ]3 is CH.
• Ring A forms pyrazole.
• Ring B forms phenyl.
• the metal of at least one of the metal complexes is a d°, d 1 , d 2 ,d ,d 4 ,d 5 , or d 6 metal.
• M' is a transition metal.
• M' is Fe, Co, Ru, Pd, Os or Ir. In further embodiments, M' is Fe or Co. In further embodiments, M' Fe, and in still further embodiments, M' is Co.
• the metal complex is Co(ppz) 3 .
• At least one metal complex has the formula II.
• Ring systems G, K and L are each 5 or 6 member monocyclic rings.
• the Ring systems G, K and L are each 5-membered heteroaryl monocyclic rings.
• R 21 and R 22 are each N.
• Ring systems G, K and L each form pyrazole.
• M" ' is a d 5 6 or d 2/3 metal.
• M" ' is a transition metal.
• M" ' is Fe, Co, Ru, Pd, Os or Ir.
• M'" is Fe or Co.
• M" ' is Fe.
• the metal complex is FeTp' 2 .
• the light emitting device further comprises an electron blocking layer, which can be include an organic electron blocking material, a metal complex, or both.
• the organic electron blocking material is selected from triarylamines or benzidenes.
• the electron blocking layer consists essentially of the metal complex.
• the electron blocking layer comprises a matrix doped with said metal complex.
• the electron blocking layer has a HOMO energy level close to the HOMO energy level of said hole transporting layer. In further embodiments, the electron blocking layer has a HOMO energy level higher than the HOMO energy level of said hole transporting layer.
• the metal complex of the electron blocking layer comprises a metal selected from Ga, In, Sn, or a group 8, 9, or 10 transition metal. In some embodiments, the metal complex of said electron blocking layer comprises Ga. In further embodiments, the metal complex of the electron blocking layer comprises a multidentate ligand. In some embodiments, the multidentate ligand has a bridging atom selected from N and P. In further embodiments, the multidentate ligand has a mesityl bridge moiety. In further embodiments, the multidentate ligand comprises up to three mono-, bi- or tricyclic heteroaromatic moieties.
• the electron blocking layer comprises a compound having the formula III:
• M is a metal atom
• X is N or CX' where X' is H, C r C 20 alkyl, C 2 -C 40 mono- or poly alkenyl, C 2 -C 40 mono- or poly alkynyl, C 3 -C 8 cycloalkyl, aryl, heteroaryl, aralkyl, heteroaralkyl, or halo;
• R 1 and R 2 together with the carbon atoms to which they are attached, link to form a fused C 3 -C 8 cycloalkyl or aryl group;
• R 3 is H, C,-C 20 alkyl, C 2 -C 40 alkenyl, C 2 -C 40 alkynyl, C 3 -C 8 cycloalkyl, aryl, aralkyl, or halo; and n is i to 5.
• M is a trivalent metal atom
• X is CH or N
• A is N or 1,3, 5 -phenyl
• each R 1 and R 2 are H, or R 1 and R 2 , together with the carbon atoms to which they are attached, link to form a phenyl group, R 3 is H; and n is 1 or 2.
• M is Ga.
• the electron blocking layer comprises Ga(pma) 3 .
• the metal complex of said hole transporting layer is Co(ppz) 3 . In further embodiments of the light emitting devices of the invention, the metal complex of said hole transporting layer is FeTp' 2 . In further embodiments of the light emitting devices of the invention, the electron blocking layer comprises Ga(pma) 3 and the metal complex of said hole transporting layer is Co(ppz) 3 .
• the electron blocking layer comprises Ga(pma) 3 and the metal complex of said hole transporting layer is FeTp' 2 .
• the present invention also provides light emitting devices comprising the substructure HTL EL or HTL EBL/EL; wherein each of said EL, HTL, and EBL comprise at least one metal complex.
• Also provided by the present invention are light emitting devices comprising the substructure HTL/EL or HTL/EBL/EL; wherein none of said EL, HTL, or EBL is comprised solely of organic molecules.
• the present invention further provides light emitting devices having a plurality of layers, the devices being devoid of a layer that is composed solely of organic molecules.
• each of said layers contains at least one metal complex.
• the present invention also provides light emitting devices comprising a hole transporting layer, an emissive layer, and a blocking layer; said hole transporting layer having a first HOMO energy, wherein said hole transporting layer comprises at least one metal complex; said emissive layer comprising at least one material capable of transporting electrons, said material having a second HOMO energy; and said blocking layer comprising a material having a HOMO energy that is between said first and second HOMO energies.
• the blocking layer resides between said hole transporting layer and said emissive layer.
• the blocking layer comprises an organic electron blocking material, which can be, but is not necessarily, selected from triarylamines or benzidenes.
• electron blocking layer comprises a metal complex.
• the present invention also provides methods of facilitating hole transport in a light emitting device, said light emitting device comprising a hole transporting layer and an emissive layer; said hole transporting layer comprising at least one metal complex and having a first
• said emissive layer comprising at least one material capable of transporting electrons, said material having a second HOMO energy higher than said HOMO energy of said hole transporting layer; said method comprising the step of placing a blocking layer between said hole transporting layer and said emissive layer, wherein said blocking layer comprises a material having a HOMO energy level that is intermediate between said first and second HOMO energies.
• the metal complex of said hole transporting layer is a complex formula I or II, as described above.
• the metal complex of the hole transporting layer is Co(ppz) 3 or FeTp' 2 .
• the blocking layer comprises at least one metal complex.
• the metal complex of said blocking layer is a compound having the formula III as described above.
• the metal complex of the blocking layer is Ga(pma) 3 .
• the hole transporting layer comprises Co(ppz) 3 or FeTp' 2
• said banier layer comprises Ga(pma) 3 .
• the present invention also provides methods of fabricating a light emitting device, said method comprising placing a hole transporting layer in electrical contact with an emissive layer, wherein said hole transporting layer comprises a compound of formulas I or II as described above.
• the light emitting device further comprises an electron blocking layer.
• the electron blocking layer comprises a compound having the formula III as described above.
• the electron blocking layer comprises Ga(pma) 3 .
• the compound is a compound of formula I, and is Co(ppz) 3 or FeTp' 2 . In further embodiments, the compound if Co(ppz) 3 .
• the present invention also provides methods of transporting holes in a hole transporting layer of a light emitting device, wherein said hole transporting layer comprises at least one metal complex, said method comprising applying a voltage across said device.
• pixels and displays comprising the devices described herein.
• Figure 1 compares plots of quantum efficiency v. cunent density for devices of the structure ITO/NPD(500 A)/Alq 3 (600 A)/MgAg and ITO/Co(ppz) 3 (500 A)/Alq 3 (600 A)/MgAg.
• Figure 2 compares plots of cunent density v. voltage for devices of the structure ITO/NPD(500 A)/Alq 3 (600 A)/MgAg and ITO/Co(ppz) 3 (500 A)/Alq 3 (600 A)/MgAg.
• Figure 3 compares plots of cunent density v. voltage for devices of the structure ITO/NPD(500 A)/Alq 3 (600 A)/MgAg and ITO/Co(ppz) 3 (500 A)/Alq 3 (600 A)/MgAg.
• Figure 4A-4C compares plots of quantum efficiency v. cunent density for devices comprising Co(ppz) 3 .
• Figure 5 compares plots of cunent density v. voltage for devices comprising Co(ppz) 3 .
• Figures 6A-6B show electronic spectra for Ga(pma) 3 .
• Figure 7 shows a cunent density v. voltage plot for a device having the structure ITO/Co(ppz) 3 (400A)/Ga(pma) 3 (100A)/Alq 3 (500A)/MgAg(1000A)/Ag.
• Figure 8 shows a luminance v. voltage plot for devices of the structure
• ITO/Co(ppz) 3 400 A)/Ga(pma) 3 (100 A)/Alq 3 (500 ⁇ )/MgAg(1000 A)/Ag.
• Figure 9 shows an external quantum efficiency v. voltage plot for devices of the structure ITO/Co(ppz) 3 (400 A)/Ga(pma) 3 (100 A)/Alq 3 (500 A)/MgAg(1000 A)/Ag.
• Figure 10 shows an external quantum efficiency v. cunent density plot for devices of the structure ITO/Co(ppz) 3 (400 A)/Ga(pma) 3 (100 A)/Alq 3 (500 A)/MgAg(1000 A)/Ag.
• Figures 11 A-l IB show cunent density v. voltage and brightness v. voltage plots for devices having the structure ITO/HTL(500 A)/CBP:Irppy(6%)(200 A)/BCP(150 A)Alq 3 (200 A)/LiF/Al.
• Figures 12A-12B show quantum efficiency v. cunent density and emission spectrum plots for devices having the structure ITO/HTL(500 A)/CBP:Trppy(6%)(200 A)/BCP(150 A)Alq 3 (200 A)/LiF/Al.
• Figure 13 shows a plot of cunent v. voltage for devices of the structure ITO/Co(ppz) 3 (400 A)/NPD(100 A)/Alq 3 (500 A)/Mg:Ag(1000 A)/Ag(400 A).
• Figure 14 shows a plot of brightness v. voltage for devices of the structure ITO/Co(ppz) 3 (400 A)/NPD(100 A)/Alq 3 (500 A)/Mg:Ag(1000 ⁇ )/Ag(400 A).
• Figures 15A-15B show a plots of quantum efficiency v. voltage and quantum efficiency v. cunent density for devices of the structure ITO/Co(ppz) 3 (400 A)/NPD(100 A)/Alq 3 (500 A)/Mg:Ag(1000 A)/Ag(400 A).
• Figure 16 illustrates some hole transporting materials.
• Figure 17 illustrates some metal complexes suitable in layers of the devices of the present invention.
• Figure 18 describes aspects of carrier migration
• Figure 19 shows chemical syntheses of metal complexes suitable in devices of the present invention.
• Figure 20 shows absorption spectra of several Co compounds suitable in devices of the present invention.
• Figure 21 shows cyclic voltammograms for Co complexes suitable in devices of the present invention.
• Figure 22 illustrates properties of devices comprising Co compounds.
• Figure 23 illustrates properties of devices comprising Co(ppz) 3 and an NPD electron blocking layer.
• Figure 24 illustrates photophysical properties of Ga(pma) 3 .
• Figure 25 illustrates properties of devices devoid of a purely organic layer.
• Figure 26 illustrates properties of devices devoid of a purely organic layer.
• Figure 27 compares properties of devices comprising NPD with properties of devices comprising Co and Ga metal complexes instead of NPD.
• the terms “low” and “deep,” in reference to molecular orbital energies, are used interchangeably. Lower and deeper generally describe molecular orbitals residing at a lower, or more stable, energy level. Ionization of electrons from deeper orbitals requires more energy than ionization of electrons in shallower, or higher, orbitals. Thus, although the deeper orbitals are said to be lower, they are often refened to numerically by higher numbers. For example, a molecular orbital residing at 5.5 eV is lower (deeper) than a molecular orbital residing at 2.5 eV. Similarly, the terms “shallow” and “high” in reference to orbital energy levels, refer to orbitals at less stable energies. These terms are well known to those skilled in the art.
• adjacent in reference to layers of light emitting devices, refers to layers having contacting sides.
• a first layer and a second layer that are adjacent to one another describe, for example, contacting layers where one side of one layer is in contact with one side of the other layer.
• the term "gap” or “band-gap” generally refers to an energy difference, such as, for example, between a HOMO and a LUMO.
• a “wider gap” refers to an energy difference that is greater than for a “nanower gap” or “smaller gap.”
• a “carrier gap” refers to the energy difference between the HOMO and LUMO of a carrier.
• the present invention is directed to, inter alia, light emitting devices comprising one or more layers that in turn comprise at least one metal complex. Devices, as such, may have higher efficiencies and higher stability as compared with devices having traditional organic blocking layers.
• the light emitting devices of the present invention are typically layered structures that electroluminesce when a voltage is applied across the device.
• Typical devices are structured so that one or more layers are sandwiched between a hole injecting anode layer and an electron injecting cathode layer.
• the sandwiched layers have two sides, one facing the anode and the other facing the cathode. These sides are refened to as the anode side and the cathode side, respectively.
• Layers are generally deposited on a substrate, such as glass, on which either the anode layer or the cathode layer may reside. In some embodiments, the anode layer is in contact with the substrate.
• an insulating material can be inserted between the electrode layer and the substrate.
• Typical substrate materials that may be rigid, flexible, transparent, or opaque, include glass, polymers, quartz, sapphire, and the like.
• Hole transporting layers are placed adjacent to the anode layer to facilitate the transport of electrons.
• a hole injecting layer for enhancing hole injection sometimes refened to as a hole injecting enhancement layer, may be placed adjacent to the anode, between the anode and the HTL.
• Materials suitable for the HTL include any material that is known by one skilled in the art to function as such.
• Suitable materials are typically easy to oxidize and include triaryl amines such as N,N'-diphenyl-N,N'- bis(3-methylphenyl)l-l'biphenyl-4,4'diamine (TPD), 4,4'-bis[N-(l-naphthyl)-N-phenyl- amino]biphenyl ( ⁇ -NPD), 4,4'-bis[N-(2-naphthyl)-N-phenyl-amino]biphenyl ( ⁇ -NPD), and the like.
• TPD N,N'-diphenyl-N,N'- bis(3-methylphenyl)l-l'biphenyl-4,4'diamine
• TPD 4,4'-bis[N-(l-naphthyl)-N-phenyl- amino]biphenyl
• ⁇ -NPD 4,4'-bis[N-(2-naphthyl)-
• ETLs are situated adjacent to the cathode layer to facilitate transport of electrons.
• An electron inj ecting enhancement layer can optionally be placed adjacent to ETL or cathode layer.
• Materials suitable for the ETL include any materials known in the art to function as such. Typical ETL materials are relatively easy to reduce and can include, for example, aluminum tris(8-hydroxyquinolate) (Alq 3 ), carbazoles, oxadiazoles, triazoles, thiophene, oligothiophene, and the like.
• HTL and ETL carrier layers can have thicknesses ranging from about 100 to about 1000 A.
• the EL layer is preferably somewhere between the HTL and ETL.
• the EL can optionally be in contact with one or both of the HTL and ETL or may be flanked by one or more blocking layers.
• EL materials can include, for example dye-doped Alq 3 and the like.
• neat (un-doped) films of luminescent material may be used as the emissive layer.
• layers can serve dual functions. For example, an ETL or HTL can also function as an EL.
• devices comprise at least one charge transport layer (i.e., carrier layer), such as, for example, a HTL, ETL, hole injecting layer, or electron injecting layer, that comprises at least one metal complex.
• the canier layer can be a thin film consisting essentially of metal complex or an organic matrix doped with metal complex.
• devices of the present invention comprise a hole blocking layer that includes at least one metal complex.
• the metal complexes of the HTLs can be selected such that their HOMO energy levels will support hole transport.
• Metal complexes that are suitable for use in devices as a charge transport layer can be selected on the basis of properties that facilitate this function.
• a hole transporting material typically undergoes one electron oxidation.
• metal complexes that are stable to one electron oxidation processes can be suitable as hole transporters.
• metal complexes that are stable to one electron reductions can be suitable as a electron transporting materials.
• Stable oxidation and reduction processes can be identified by electrochemical methods such as cyclic voltammetry, which is further discussed below. Another consideration is charge mobility.
• materials having high hole mobilities can generally function as good hole transporters. Charge mobility often conesponds with low reorganizational energies for redox processes.
• metal complexes showing little structural differences when oxidized or reduced typically have a relatively small energy barrier (reorganizational energy) associated with oxidation or reduction.
• reorganizational energy energy barrier
• Certain metal properties such as electron configuration can affect reorganizational barriers, as is well known in the art and further discussed below.
• certain ligand properties such as denticity, can affect reorganizational barriers of redox events in metal complexes, the details of which are also further discussed below.
• one or more layers of the device comprise one or more dopants.
• Emissive dopants i.e., photoemitting molecules, emitters
• Doped layers usually comprise a maj ority of host material and minority of dopant.
• Host material also refened to as matrix typically transfers excitons through a non-radiative process to the emissive dopant material, which then emits light of a wavelength characteristic of the dopant, rather than the host.
• Dopants can also serve to trap charge.
• the LUMO levels of the host and dopant can be ananged such that the LUMO level of the dopant is lower than the LUMO level of the host, such that the dopant molecule can act as an electron trap.
• the HOMO levels of the host and dopant can be ananged such that the HOMO level of the dopant is higher than the HOMO level of the host, such that the dopant molecule would act as a hole trap.
• one or more dopants, refened to as transfer dopants can be used to facilitate the transfer of energy from the host to the emissive dopant.
• cascade doping can be used, which involves the non-radiative transfer of excitons from a molecule of the host through one or more transfer dopants to the emissive dopant.
• These intermediate transfers can be by F ⁇ rster transfer, Dexter transfer, hole trapping or electron trapping that eventually leads to the formation of an exciton on the transfer dopant or the emissive dopant, or by any other suitable mechanism.
• Dopants can be present in the host material in quantities ranging, for example, from about 0.1% to about 50%, from about 1% to about 20%, or from 1% to about 10% by weight. A level of about 1% by weight of doping is prefened for emissive dopants in host material. Alternatively, in some embodiments, levels of dopant result in an average intermolecular distance between dopant molecules of about the F ⁇ rster radius of the dopant, such as, for example, from about 20 to about 40 A, or from about 25 to about 35 A, or about 30 A.
• Emissive dopants can include any compound that is capable of photoemission. Emissive dopants include fluorescent organic dyes, such as laser dyes, as known and used in the art.
• Prefened emissive dopants include phosphorescent metal complexes such as the Ir, Pt, and other heavy metal complexes disclosed in Application Ser. Nos. 08/980,986, filed December 1, 1997, 09/883,734, filed June 18, 2001, and 60/283,814, filed April 13, 2001, each of which is herein inco ⁇ orated by reference in its entirety.
• devices of the present invention comprise at least one blocking layer.
• Blocking layers function to confine holes, electrons, and/or excitons to specific regions of the light emitting devices. For example, device efficiency can be increased when excitons are confined to the EL and/or when holes and electrons are prevented from migrating out of the EL.
• Blocking layers can serve one or more blocking functions.
• a hole blocking layer can also serve as an exciton blocking layer.
• the hole blocking layer does not simultaneously serve as an emissive layer in devices of the present invention.
• a blocking layer can include compounds that are capable of emitting, emission can occur in a separate emissive layer. Thus, in prefened embodiments, the blocking layer does not luminesce.
• Blocking layers can be thinner than canier layers.
• Typical blocking layers have thicknesses ranging from about 50 A to about 1000 A, or from about 50 A to about 750 A, or from about 50 A to about 500 A. Additionally, blocking layers preferably comprise compounds other than BAlq.
• Hole blocking layers are typically comprised of materials that have difficulty acquiring a hole. For example, hole blocking materials can be relatively difficult to oxidize. In most instances, hole blocking materials are more difficult to oxidize than an adjacent layer from transporting holes. A material that is more difficult to oxidize than another material typically possesses a lower HOMO energy level.
• holes originating from the anode and migrating into an EL can be effectively blocked from exiting the EL (on the cathode side) by placing a blocking layer of material adjacent to the EL on the cathode side of the device.
• the blocking layer preferably has a HOMO energy level lower than the HOMO energy levels of the EL. Larger differences in HOMO energy levels conespond to better hole blocking ability.
• the HOMO of the materials of the blocking layer are preferably at least about 50, 100, 200, 300, 400, 500 meV (milli-electronvolts) or more deeper than the HOMO level of an adjacent layer in which holes are to be confined. In some embodiments, the HOMO of the materials of the blocking layer are at least about 200 meV deeper than the HOMO level of an adjacent layer in which holes are to be confined.
• the layer in which holes are to be confined can comprise more than one material, such as a host material (matrix) and a dopant.
• a HBL preferably has a HOMO energy level that is lower (deeper) than the material of the adjacent layer which carries the majority of positive charge (i.e., the material with the highest (shallowest) HOMO energy level).
• an emissive layer can comprise a host material having a deeper HOMO energy level than the dopant.
• the dopant acts as a trap for holes and can be the principle hole transporter of the emissive layer.
• the HOMO energy of the dopant is considered when selecting a hole blocking layer.
• the HOMO energy level of the HBL can be higher than the host material and lower than that of the dopant.
• Hole blocking layers are also preferably good electron injectors. Accordingly, the LUMO energy level of the HBL is preferably close to the LUMO energy level of the layer in which holes are to be confined. Differences in LUMO energy levels between the two layers in some embodiments can be less than about 500 meV, 200 meV,100 meV, 50 meV, or even smaller. Hole blocking layers that are also good electron injectors typically have smaller energy baniers to electron injection than for hole leakage. Accordingly, the difference between the LUMO energies of the HBL and the layer in which holes are to be confined (conesponding to an electron inj ection energy barrier) is smaller than the difference in their HOMO energies (i.e., hole blocking energy barrier).
• EBLs electron blocking layers
• a material that is more difficult to reduce than another material generally has a higher LUMO energy level.
• electrons originating from the cathode and migrating into an EL layer can be blocked from exiting the EL (on the anode side) by placing a blocking layer adjacent to the anode side of the EL where the blocking layer has a LUMO energy level higher than the LUMO energy level of the EL. Larger differences in LUMO energy levels conespond to better electron blocking ability.
• the LUMO of the materials of the blocking layer are preferably at least about 50 meV, 100 meV, 200 meV, 300 meV, 400 meV, 500 meV or more higher (shallower) than the LUMO level of an adjacent layer in which holes are to be confined.
• the LUMO of the materials of the blocking layer can be at least about 200 meV higher (shallower) than the LUMO level of an adjacent layer in which holes are to be confined.
• the layer in which electrons are to be confined can comprise more than one material, such as a host material (matrix) and a dopant.
• an EBL preferably has a LUMO energy level that is higher than the material of the adjacent layer which canies the majority of negative charge (e.g., either the host or dopant having the lowest LUMO energy level).
• an emissive layer can include a host material having a deeper LUMO energy level than the dopant.
• the host can be the principle electron transporter of the emissive layer.
• the LUMO energy level of the EBL can be higher than the host material and lower than that of the dopant.
• the dopant served as the primary carrier of electrons then the EBL preferably has a higher LUMO than the dopant.
• Electron blocking layers are also preferably good hole injectors. Accordingly, the
• HOMO energy level of the EBL is preferably close to the HOMO energy level of the layer in which electrons are to be confined. Differences in HOMO energy levels between the two layers in some embodiments can be less than about 500 meV, 200 meV, 100 meV, 50 meV, or even smaller. Electron blocking layers that are also good hole injectors typically have smaller energy barriers to hole injection than for electron leakage. Accordingly, the difference between the HOMO energies of the EBL and the layer in which electrons are to be confined (conesponding to an hole injection energy barrier) is smaller than the difference in their LUMO energies (i.e., electron blocking energy barrier).
• excitons from the EL to other parts of the devices can be blocked with materials that have difficulty acquiring excitons. Transfer of an exciton from one material to another may be prevented when the receiving material has a wider (greater) optical gap than the exciton donating material.
• excitons can be substantially confined to the EL layer of a device by placing, adjacent to the EL layer, an exciton blocking layer having a wider optical gap than the materials comprising the EL layer.
• Exciton blocking layers can also be placed on either side of the EL.
• Exciton blocking layers can also serve as HBLs or EBLs, depending on the energy levels of the HOMO or LUMO of the exciton blocking material compared with those of adjacent layers (as discussed above).
• exciton blocking layers can be good electron or hole injectors when either the HOMO or LUMO energy level of the exciton blocking layer is close in energy to the respective HOMO or LUMO energy level of an adjacent layer.
• the exciton blocking layer can have a HOMO energy level that is less than about 500, 200, or 100 meV from the HOMO energy level of said emissive layer.
• the exciton blocking layer can have a LUMO energy level that is less than about 500, 200, 100 meV from the LUMO energy level of said emissive layer.
• blocking layers can also comprise dopants.
• the blocking layer can be comprised of a wide band-gap matrix (host) material doped with a smaller band-gap dopant.
• the effective LUMO energy of the blocking layer can be lowered by the presence of dopant, consequently improving the electron conduction and injection properties of a hole blocking layer.
• the effective HOMO energy of the blocking layer can be raised by the presence of dopant, thereby improving hole injection properties.
• HBLs comprise a wide band-gap matrix doped with a smaller band-gap material where the deep HOMO energy level of the matrix serves to prevent transport of holes and the relatively shallow LUMO level of the dopant favors electron injection.
• the matrix can comprise a substantially conjugated organic molecule such as, for example, octaphenyl cyclooctatetraene (OPCOT), oligophenylenes such as hexaphenyl, and other similar materials having a wide band-gap.
• Suitable matrix band gap values can be at least about 3 eV, but can also be at least about 2.5 eV, 3.0 eV, 3.3 eV, 3.5 eV or higher.
• Dopant is preferably a metal complex. Doping levels can range from about 1 % to about 50%, or more preferably from about 5% to about 20%o, or even more preferably from about 10 to about 15% by weight.
• An example of a suitable metal complex used as a dopant for blocking layers is bis(2-(4,6- difluorophenyl)pyridyl-N, C2')iridium(III) picolinate (Fl ⁇ ic).
• An example of hole blocking layer comprising a matrix doped with a metal complex is OPCOT doped with 15% by weight of Fl ⁇ ic (OPCOT:FI ⁇ ic(l 5%)).
• OPCOT:FI ⁇ ic can effectively confine holes to an emissive layer comprising CBP doped with Ir(ppy) 3 (tris(2-phenylpyridyl-N, C2')iridium(III), Irppy) because the HOMO of OPCOT is lower than the HOMO of Ixppy and the LUMO of Fl ⁇ ic is higher than the LUMO of CBP.
• Ir(ppy) 3 tris(2-phenylpyridyl-N, C2')iridium(III), Irppy
• Metal complexes used in the devices of the present invention include any metal coordination complex comprising at least one metal atom and at least one ligand. Metal complexes can be charged or uncharged; however, uncharged complexes are more amenable to the thin layer deposition techniques used in OLED fabrication. Metal complexes are preferably stable to both one electron oxidation and one electron reduction processes. Redox-stable complexes can be identified, for example, by cyclic voltammetry (e.g., identification of reversible redox events). Additionally, such metal complexes often have low reorganizational energy baniers associated with oxidation and reduction. Accordingly, complexes having low reorganizational energy barriers show little structural difference between resting state, oxidized, and reduced state.
• Metal complexes typically characterized as having low reorganizational energy baniers include complexes having d°, d 1 , d 2 , d 3 , d 4 , d 5 and d 6 electron configurations.
• octahedral complexes having d 3 or d 6 metals typically generally have low reorganizational energy barriers.
• Metal complexes in which redox events affect predominantly non-bonding molecular orbitals (such as the t 2g set in octahedral transition metal complexes) generally have low reorganizational energy barriers, since little structural change is seen in the ligand set upon oxidation or reduction. Reorganizational energy associated with redox events can also be modulated by the ligand set.
• multidentate ligands can structurally impose a certain coordination geometry in metal complexes.
• Relatively rigid tridentate, tetradentate, hexadentate ligands, and the like can constrain coordination geometry such that redox events do not result in significant structural reorganization.
• metal complexes that are coordinatively saturated such as six-coordinate complexes, which are less likely to have significant structural change associated with oxidation or reduction, are also prefened.
• Four-coordinate complexes can also be suitable and can include both tetrahedral and square-planar complexes as well as others. Octahedral complexes are also suitable due to their propensity for forming glassy films.
• Metal complexes comprising aromatic ligands may help facilitate redox processes, preferably in those instances where redox events are largely centered on the ligand. Furthermore, metal complexes comprising heavy metals are prefened over those with lighter metals for their greater thermal stability. For example, complexes comprising second and third row transition metals are prefened.
• Any metal atom, in any of its accessible oxidation states, is suitable in metal complexes, including main group, transition metals, lanthanides, actinides, alkaline earth, and alkali metals.
• Transition metals include Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, and Hg.
• Main group metals include Al, Ga, Ge, In, Sn, Sb, Tl, Pb, Bi, and Po. In some embodiments, metals having an atomic number greater than about 13, 36, or 54 are prefened.
• Metal complexes can include any suitable ligand system. Suitable ligands can be monodentate, bidentate, multidentate, ⁇ -bonding, organic, inorganic, charged, or uncharged. Further, ligands preferably comprise one or more heteroatoms through which the metal atom is coordinated, although organometallic compounds comprising coordinating carbon are also suitable and also considered as metal complexes. Coordinating heteroatoms of the ligands can include oxygen, nitrogen, sulphur, phosphorus, and the like.
• Nitrogen-containing ligands can include amines, nitrenes, azide, diazenes, triazenes, nitric oxide, polypyrazolylborates, heterocycles such as 2,2'-bipyridine (bpy), 1,10-phenanthroline, te ⁇ yridine (frpy), pyridazine, pyrimidine, purine, pyrazine, pyridine, 1 ,8-napthyridine, pyrazolate, imidazolate, and macrocycles including those with and without a conjugated ⁇ system, and the like.
• Phosphorus-containing ligands typically include phosphines and the like.
• Oxygen-containing ligands include water, hydroxide, oxo, superoxide, peroxide, alkoxides, alcohols, aryloxides, ethers, ketones, esters, carboxylates, crown ethers, ⁇ -diketones, carbamate, dimethylsulfoxide, and oxo anions such as carbonate, nitrate, nitrite, sulfate, sulfite, phosphate, perchlorate, molybdate, tungstate, oxalate and related groups.
• Sulfur-containing ligands can include hydrogen sulfide, thiols, thiolates, sulfides, disulfides, thioether, sulfur oxides, dithiocarbamates, 1,2-dithiolenes, and the like.
• Ligands comprising coordinating carbon atoms can include cyanide, carbon disulfide, alkyl, alkenes, alkynes, carbide, cyclopentadienide, and the like. Halides can also serve as ligands.
• Ligands can be further derivatized with one or more substituents, including anionic groups, to fully or partially neutralize any positive formal charge associated with the metal atoms of the metal complexes.
• Suitable anionic substitutents can include carbonate, nitrate, nitrite, sulfate, sulfite, phosphate, and the like.
• suitable metal complexes for use in hole transporting layers can include, inter alia, transition metal complexes having first, second, or third row transition metals, including, for example, Fe,Co, Ru, Pd, Os, and Ir. Further examples include coordinatively saturated complexes and complexes that are six- or four-coordinate.
• devices comprise a hole blocking layer comprising at least one metal complex of Formula I or II:
• M' and M'" are each, independently, a metal atom
• R 13 , R 20 and R 21 are each, independently, N or CH;
• R u and R 12 are each, independently, N, CH, O or S;
• Ring systems A, B, G, K and L are each independently a mono-, di- or tricyclic fused aliphatic or aromatic ring system optionally containing up to 5 hetero atoms;
• Z is Cj-C 6 alkyl, C 2 -C 8 mono- or poly alkenyl, C 2 -C 8 mono- or poly alkynyl, or a bond;
• Q is BH, N, or CH.
• a particularly suitable compound of the above Formula I is Co(ppz) 3 , the structure of which is shown below.
• Another particularly suitable compound of the above Formula II is iron trispyrazolylborate (FeTp' 2 ), the structure of which is shown below.
• Metal complexes suitable for hole blocking layers can include, inter alia, complexes of Os, Ir, Pt, and Au, including those described in Application Ser. Nos. 08/980,986, filed December 1, 1997, 09/883,734, filed June 18, 2001, and 60/283,814, filed April 13, 2001, each of which is herein inco ⁇ orated by reference in its entirety.
• An example of a metal complex suitable in hole blocking layers is bis(2-(4,6-difluorophenyl)pyridyl-N, C2')iridium(III) picolinate (Fl ⁇ ic), the structure of which is shown below.
• Metal complexes suitable for electron blocking layers include those that are relatively difficult to reduce (i.e., high LUMO energy level). Suitable metal complexes include metal complexes of the formula:
• M is a metal atom
• X is N or CX' where X' is H, C,-C 20 alkyl, C 2 -C 40 mono- or poly alkenyl, C 2 -C 40 mono- or poly alkynyl, C 3 -C 8 cycloalkyl, aryl, heteroaryl, aralkyl, heteroaralkyl, or halo;
• R 1 and R 2 together with the carbon atoms to which they are attached, link to form a fused C 3 -C 8 cycloalkyl or aryl group;
• R 3 is H, C,-C 2 o alkyl, C 2 -C 40 alkenyl, C 2 -C 40 alkynyl, C 3 -C 8 cycloalkyl, aryl, aralkyl, or halo; and n is 1 to 5.
• M is a trivalent metal such as Al or Ga.
• Variable A may preferably be CR 3 or N.
• R 1 and R 2 in some embodiments, j oin to form a fused aromatic ring such as phenyl or pyridyl.
• a particularly suitable compound of the above formula is gallium(III)tris[2-(((pynole-2-yl)methylidene)amino)ethyl]amine (Ga(pma) 3 ) shown below.
• M is a metal atom; is N or CX' where X' is H, C,-C 20 alkyl, C 2 -C 40 mono- or poly alkenyl, C 2 -C 40 mono- or poly alkynyl, C 3 -C 8 cycloalkyl, aryl, heteroaryl, aralkyl, heteroaralkyl, or halo; each R 1 and R 2 is, independently, H, C,-C 20 alkyl, C 2 -C 40 alkenyl, C 2 -C 40 alkynyl, C 3 - C g cycloalkyl, aryl, aralkyl, or halo; or
• R 1 and R 2 together with the carbon atoms to which they are attached, link to form a fused C 3 -C 8 cycloalkyl or aryl group; and R 3 is H, C,-C 20 alkyl, C 2 -C 40 alkenyl, C 2 -C 40 alkynyl, C 3 -C 8 cycloalkyl, aryl, aralkyl, or halo.
• alkyl groups include optionally substituted linear and branched aliphatic groups.
• Cycloalkyl refers to cyclic alkyl groups, including, for example, cyclohexyl and cyclopentyl, as well as heterocycloalkyl groups such as pyranyl, and furanyl groups. Cycloalkyl groups may be optionally substituted.
• Alkenyl groups may be substituted or unsubstituted and comprise at least one carbon-carbon double bond.
• Alkynyl groups may be substituted or unsubstituted and comprise at least one carbon- carbon triple bond.
• Aryl groups are aromatic and substituted aromatic groups having about 3 to about 50 carbon atoms, including, for example, phenyl and naphthyl.
• Heteroaryl groups are aromatic or substituted aromatic groups having from about 3 to about 50 carbon atoms and comprising at least one heteroatom. Examples of heteroaryl groups include pyridyl and imidazolyl groups.
• Aralkyl groups can be substituted or unsubstituted and have about 3 to about 30 carbon atoms, and include, for example, benzyl.
• Heteroaralkyl include aralkyl groups comprising at least one hetero atom.
• Halo includes fluoro, chloro, bromo, and iodo. Substituted groups may contain one or more substituents.
• Suitable substituents may include, for example, H, C,-C 20 alkyl, C 2 -C 40 alkenyl, C 2 -C 40 alkynyl, C 3 -C 8 cycloalkyl, C 3 -C 8 heterocycloalkyl, aryl, heteroaryl, aralkyl, heteroaralkyl, halo, amino, azido, nitro, carboxyl, cyano, aldehyde, alkylcarbonyl, aminocarbonyl, hydroxyl, alkoxy, and the like.
• Substituents can also be electron-withdrawing groups and electron-donating groups.
• hetero is intended to denote a non-carbon atom, for example N, O, or S.
• Metal complexes suitable for exciton blocking layers include those that have relatively wide optical gaps.
• Metal complexes suitable for the preparation of hole blocking layers include high energy absorbers and emitters, such as for example, blue emitters.
• Prefened metal complexes include those in which the metal has a closed valence shell (no unpaired electrons). As a result, many prefened metal complexes for preparing exciton blocking layers are colorless, since their optical gap energy falls outside the visible range. Further, complexes having heavy metals are prefened. For example, heavy metals of the second and third row transition series tend to have larger optical gaps due to a stronger ligand field.
• metal complexes for exciton blocking layers include, inter alia, complexes of Os, Ir, Pt, and Au, such as those described in Application Ser. Nos.08/980,986, filed December 1, 1997, 09/883,734, filed June 18, 2001, and 60/283,814, filed April 13, 2001, each of which is herein inco ⁇ orated by reference in its entirety.
• metal complexes suitable for exciton blocking layers include Fl ⁇ ic, Ga(pma) 3 , and related compounds.
• devices can include a hole transporting layer that includes at least one metal complex, and, in some embodiments, an electron blocking layer that includes, for example, organic material, a metal complex, or both.
• Suitable organic materials include any organic electron blocking material known in the art such as, for example, triarylamines or benzidenes.
• the electron blocking layer resides between the HTL and EL. Accordingly, the electron blocking layer can be selected such that the HOMO energy level of the electron blocking layer falls between the HOMO energy levels of the HTL and EL. In other embodiments, the HOMO energy level of the electron blocking layer is close to the HOMO energy level of the hole transporting layer.
• the magnitude of the difference between the HOMO energy levels of the electron blocking layer and the hole transporting layer can be about 500, 200, 100, 50 meV'or less.
• metal complexes suitable as electron blocking layers include complexes having Ga, In, Sn or a transition metal such as a group 8, 9, or 10 transition metal.
• suitable metal complexes include complexes having multidentate ligands.
• a particularly suitable metal complex is Ga(pma) 3 .
• the metal complexes of the metal complex-containing HTLs described herein can impart charge-carrying and/or blocking functions
• the metal complexes also provide the additional advantage of increasing the thermal stability of devices of the invention. This is significant because OLEDs and similar light emitting devices can be subject to elevated temperatures for prolonged periods of time, and such exposure is thought to be a limiting factor in the lifetimes of such devices. Accordingly, devices of the invention containing for example, complexes of heavy metals such as second and third row transition metals and fourth and fifth row main group metals are envisaged to benefits in terms of lifetime of the device.
• the HOMO and LUMO energy levels for OLED materials can be measured, or estimated, in several ways known in the art.
• the two common methods for estimating HOMO energy levels include solution electrochemistry, such as cyclic voltammetry, and ultraviolet photoelectron spectroscopy (UPS).
• Two methods for estimating LUMO levels include solution electrochemistry and inverse photoemission spectroscopy. As discussed above, alignment of the HOMO and LUMO energy levels of adjacent layers can control the passage of holes and electrons between the two layers.
• Cyclic voltammety is one of the most common methods for determining oxidation and reduction potentials of compounds. This technique is well known to those skilled in the art, and a simple description of this process follows.
• a test compound is dissolved along with a high concentration of electrolyte. Electrodes are inserted and the voltage scanned in either the positive or negative direction (depending on whether an oxidation or reduction is being performed). The presence of a redox reaction is indicated by cunent flowing through the cell. The voltage scan is then reversed and the redox reaction is reversed.
• the reference can be an external electrode, such as Ag/AgCl or SCE, or it can be an internal one, such as fenocene, which has a known oxidation potential.
• a useful parameter that may come from cyclic voltammetry is the carrier gap. If both the reduction and oxidation are reversible, one can determine the energy difference between the hole and the electron (i.e. taking an electron out of the HOMO versus putting one into the LUMO). This value can be used to determine the LUMO energy from a well defined HOMO energy. Method for determining redox potentials and reversiblity of redox events using cyclic voltammetry is well known in the art.
• UPS is an alternative technique for determining absolute binding energies in the solid state.
• solution electrochemistry is typically adequate for most compounds, and for giving relative redox potentials, the measurements taken in the solution phase can differ from values in the solid phase.
• a prefened method of estimating HOMO energies in the solid state is UPS. This is a photoelectric measurement, where the solid is inadiated with UV photons. The energy of the photons are gradually increased until photogenerated electrons are observed. The onset of ejected electrons gives the energy of the HOMO. The photons at that energy have just enough energy to eject an electron from the top of the filled levels. UPS provides HOMO energy level values in eV relative to vacuum which conesponds to the binding energy for the electron.
• Inverse photoemission may be used to directly estimate LUMO energy levels. This technique involves pre-reducing the sample and then probing the filled states to estimate the LUMO energies. More specifically, a material is injected with electrons which then decay into unoccupied states and emit light. By varying the energy of the incoming electrons and the angle of the incident beam, electronic structure of a material can be studied. Methods of measuring LUMO energy levels using inverse photoemission are well known to those skilled in the art. Optical gap values can be determined from the intersection of the normalized abso ⁇ tion and emission spectra.
• the optical gap roughly conesponds to the HOMO- LUMO gap, and such estimation may be adequate for ideal systems.
• the shift between the abso ⁇ tion and emission maxima is large (Stokes shift) the optical gap can be more difficult to determine. For example, if there is a structural reanangement in the excited state or the measured abso ⁇ tion does not represent the lowest energy excited state, then there can be a substantial enor.
• the edge of the abso ⁇ tion band of the material is preferably used to obtain a value for its optical gap.
• device layers comprising materials having abso ⁇ tion band energies higher than for adjacent layers may serve as effective exciton blocking layers. For example, if an exciton approaches a layer in a device having a higher energy abso ⁇ tion edge than the material containing the exciton, the probability that the exciton will be transfened into the higher energy material is low.
• the abso ⁇ tion edge is a prefened estimate for optical gap, since the intersystem crossing leads to a very large Stokes shift.
• Light emitting devices of the present invention can be fabricated by a variety of techniques well known to those skilled in the art.
• Small molecule layers including those comprised of neutral metal complexes, can be prepared by vacuum deposition, organic vapor phase deposition (OVPD), such as disclosed in Application No.08/972, 156, filed November 17, 1997, which is inco ⁇ orated herein by reference in it its entirety, or solution processing such as spin coating.
• Polymeric films can be deposited by spin coating and CVD.
• Layers of charged compounds, such as salts of charged metal complexes can be prepared by solution methods such a spin coating or by an OVPD method such as disclosed in U.S. Pat. No. 5,554,220, which is inco ⁇ orated herein by reference in its entirety.
• Layer deposition generally, though not necessarily, proceeds in the direction of the anode to the cathode, and the anode typically rests on a substrate.
• methods of fabricating devices involving depositing a blocking layer that comprises a metal complex onto a preexisting layer, are also encompassed by the present invention.
• Preexisting layers include any layer that is designed to be in contact with the blocking layer.
• the preexisting layer can be an emissive layer or a HTL. Devices and techniques for their fabrication are described throughout the literature and in, for example, U.S. Pat. Nos.5,703,436; 5,986,401; 6,013,982; 6,097,147; and 6,166,489.
• a transparent anode material such as ITO may be used as the bottom electron. Since the top electrode of such a device does not need to be transparent, such a top electrode, which is typically a cathode, may be comprised of a thick and reflective metal layer having a high electrical conductivity. In contrast, for transparent or top-emitting devices, a transparent cathode may be used such as disclosed in U.S. Pat. Nos. 5,703,436 and 5,707,745, each of which is inco ⁇ orated herein by reference in its entirety. Top-emitting devices may have an opaque and/or reflective substrate, such that light is produced substantially out of the top of the device. Devices can also be fully transparent, emitting from both top and bottom.
• Transparent cathodes such as those used in top-emitting devices preferably have optical transmission characteristics such that the device has an optical transmission of at least about 50%), although lower optical transmissions can be used.
• devices include transparent cathodes having optical characteristics that permit the devices to have optical transmissions of at least about 10%, 85%, or more.
• Transparent cathodes such as those described in U.S. Pat. Nos. 5,703,436 and 5,707,745, typically comprise a thin layer of metal such as Mg:Ag with a thickness, for example, that is less than about 100 A.
• the Mg: Ag layer can be coated with a transparent, electrically-condutive, sputter-deposited, ITO layer.
• Such cathodes are often refened to as compound cathodes or as TOLED (transparent- OLED) cathodes.
• the thickness of the Mg:Ag and ITO layers in compound cathodes may each be adjusted to produce the desired combination of both high optical transmission and high electrical conductivity, for example, an electrical conductivity as reflected by an overall cathode resistivity of about 30 to 100 ohms per square.
• an electrical conductivity as reflected by an overall cathode resistivity of about 30 to 100 ohms per square.
• resistivity can still be somewhat too high for passive matrix anay OLED pixels in which the cunent that powers each pixel needs to be conducted across the entire anay through the nanow strips of the compound cathode.
• the present invention further includes methods of facilitating hole transport in a light emitting device, wherein the light emitting device preferably comprises a hole transporting layer and an emissive layer, and wherein the hole transporting layer comprises at least one metal complex.
• the device is designed such that the emissive layer has a higher HOMO energy level than the HOMO energy level of the hole transporting layer.
• the methods involve placing an electron blocking layer between the HTL and EL, where the HOMO energy level of the electron blocking layer has a HOMO energy level between that of the HTL and EL.
• the present invention further includes methods of transporting holes in a hole transporting layer of a light emitting device, where said hole transporting layer comprises at least one metal complex, comprising applying a voltage across a device of this structure.
• Structures of light emitting devices are often refened to by a sequential listing of layer materials separated by slashes.
• a device having an anode layer adjacent to a hole transporting which is adjacent to an emissive layer which is adjacent to an electron blocking layer which is adjacent to a cathode layer can be written as anode/HTL/EL/ETL/cathode.
• devices of the present invention can include the substructures HTL/EL/HBL, HTL/EBL/EL, HTL/EBL/ETL, an others.
• Some prefened structures of the present invention include anode/HTL/EL/HBL/ETL/cathode and anode HTL/EBL/EL/ETL/cathode.
• inventions include devices with substructures HTL/EL or HTL/EBL/EL where each of the EL, HTL, and EBL comprise at least one metal complex or where none of the EL, HTL, or EBL comprise solely organic molecules.
• Further embodiments include a device, having a plurality of layers, devoid of a layer that is composed solely of organic molecules or a device having a plurality of layers where each of the layers contains at least one metal complex.
• Light emitting devices of the present invention can be used in a pixel for a display.
• Virtually any type of display can inco ⁇ orate the present devices.
• Displays can include computer monitors, televisions, personal digital assistants, printers, instrument panels, bill boards, and the like.
• the present devices can be used in heads-up displays because they can be substantially transparent when not in use.
• the reaction mixture was transfened to a separatory funnel containing aqueous NH 4 C1 (lOg/liter, 75ml) and CH 2 C1 2 (75ml) and shook.
• the resulting thick emulsion was passed through a course fritted funnel, which aided the separation of the two layers.
• the organic layer was isolated and the aqueous layer was extracted twice more with CH 2 C1 2 (75ml).
• the CH 2 C1 2 solutions were combined, dried over MgSO 4 , filtered and concentrate under reduced pressure. Addition of hexanes to the black/yellow concentrate caused the product to precipitate as a dark yellow solid.
• the reaction mixture was transfened to a separatory funnel containing aqueous NH 4 C1 (lOg/liter, 75ml) and CH 2 C1 2 (75ml) and shook.
• the resulting thick emulsion was passed through a course fritted funnel, which aided the separation of the two layers.
• the organic layer was isolated and the aqueous layer was extracted twice more with CH 2 C1 2 (75ml).
• the CH 2 C1 2 solutions were combined, dried over MgSO , filtered and concentrate under reduced pressure. Addition of hexanes to the black/yellow concentrate caused the product to precipitate as a dark yellow solid.
• Ligand synthesis (4-methoxyphenylpyrazole): A 250ml flask was charged with a magnetic stiner bar, 4-methoxyboronic acid (16mmol, 2.0equiv.), pyrazole (8mmol, 1.Oequiv.), anhydrous cupric acetate (12mmol, 1.5mmol), 6g activated 4A molecular sieves, pyridine (16mmol, 2. Oequiv.), and 96 ml dichloromethane. The reaction was stined under air at ambient temperature in a loosely capped flask for 2 days.
• the reaction mixture was transfened to a separatory funnel containing aqueous NH 4 C1 (lOg/liter, 75ml) and CH 2 C1 2 (75ml) and shook.
• the resulting thick emulsion was passed through a course fritted funnel, which aided the separation of the two layers.
• the organic layer was isolated and the aqueous layer was extracted twice more with CH 2 C1 2 (75ml).
• the CH 2 C1 2 solutions were combined, dried over MgSO 4 , filtered and concentrate under reduced pressure. Addition of hexanes to the black/yellow concentrate caused the product to precipitate as a dark yellow solid.
• the reaction mixture was transfened to a separatory funnel containing aqueous NH 4 C1 (lOg/liter, 75ml) and CH 2 C1 2 (75ml) and shook.
• the resulting thick emulsion was passed through a course fritted funnel, which aided the separation of the two layers.
• the organic layer was isolated and the aqueous layer was extracted twice more with CH 2 C1 2 (75ml).
• the CH 2 C1 2 solutions were combined, dried over MgSO 4 , filtered and concentrate under reduced pressure. Addition of hexanes to the black/yellow concentrate caused the product to precipitate as a dark yellow solid.
• the reaction mixture was transfened to a separatory funnel containing aqueous NH 4 C1 (lOg/liter, 75ml) and CH 2 C1 2 (75ml) and shook.
• the resulting thick emulsion was passed through a course fritted funnel, which aided the separation of the two layers.
• the organic layer was isolated and the aqueous layer was extracted twice more with CH 2 C1 2 (75ml).
• the CH 2 C1 2 solutions were combined, dried over MgSO 4 , filtered and concentrate under reduced pressure. Addition of hexanes to the black/yellow concentrate caused the product to precipitate as a dark yellow solid.
• the reaction mixture was transfened to a separatory funnel containing aqueous NH 4 C1 (lOg/liter, 75ml) and CH 2 C1 2 (75ml) and shook.
• the resulting thick emulsion was passed through a course fritted funnel, which aided the separation of the two layers.
• the organic layer was isolated and the aqueous layer was extracted twice more with CH 2 C1 2 (75ml).
• the CH 2 C1 2 solutions were combined, dried over MgSO 4 , filtered and concentrate under reduced pressure. Addition of hexanes to the black/yellow concentrate caused the product to precipitate as a dark yellow solid.
• the ligand [(((pynole-2-yl)methylidene)amino)ethyl]amine was prepared by adding a methanolic solution of pynole-2-carboxaldehyde (1.430 g, 15 mmol, 100 mL) to a methanolic solution of tris(2-aminoethyl)amine (0.720 g, 5 mmol, 10 mL). The resulting yellow solution was stined at room temperature for 30 min. A methanolic solution of gallium(III) nitrate hydrate (1.280 g, 5 mmol, 150 mL) was added to the ligand solution and stined at room temperature for 30 min. The solution was filtered and left to stand at ambient temperature until crystallization occuned. The crude material was then sublimed at 235 °C.
• Example 8 Devices of the present invention.
• Functional OLEDs were prepared with the structure ITO HTL/Alq 3 MgAg where Co(ppz) 3 was used as the HTL. These devices had lower efficiency than for comparable devices in which the HTL was composed of friary lamines. Higher efficiencies were achieved for these devices when a thin layer of NPD was inset between the Co(ppz) 3 and Alq 3 layers.
• the HOMO levels for both NPD and Co(ppz) 3 are at comparable energies (5.5 eV for NPD and 5.4 eV for Co(ppz) 3 ). See Figures 13-15.
• Example 9 Devices according to embodiments of the present invention.
• Functional OLEDs were prepared with a Co(ppz) 3 hole transporting layer, a Ga(pma) 3 electron blocking layer and an Alq 3 emissive layer.
• Example 10 Devices according to embodiments of the present invention Functional OLEDs were prepared with a Co(ppz) 3 /Ga(pma) 3 hole tranporting layer and a doped CBP emissive layer. An analogous device was also prepared with an NPD hole transporting layer. Overall, the Co(ppz) 3 /(Ga(pma) 3 device performed better than the device with the NPD layer. The low voltage cunents are lower and the spectra show no blue emission (below 400 nm) for Co(ppz) 3 /(Ga(pma) 3 . The turn-on voltages for the Co(ppz) 3 /(Ga(pma) 3 based device was slightly higher than for the NPD-based device and the quantum efficiency was lower. Both of these parameters are expected to improve with device optimization. See Figures 11-12.

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