WO2002063663A1 - Appareil d"exposition a faisceau d"electrons et procede d"exposition - Google Patents

Appareil d"exposition a faisceau d"electrons et procede d"exposition Download PDF

Info

Publication number
WO2002063663A1
WO2002063663A1 PCT/JP2002/000715 JP0200715W WO02063663A1 WO 2002063663 A1 WO2002063663 A1 WO 2002063663A1 JP 0200715 W JP0200715 W JP 0200715W WO 02063663 A1 WO02063663 A1 WO 02063663A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
exposure
sectional shape
cross
pattern
Prior art date
Application number
PCT/JP2002/000715
Other languages
English (en)
Japanese (ja)
Inventor
Keita Bunya
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Publication of WO2002063663A1 publication Critical patent/WO2002063663A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Definitions

  • the present invention relates to an electron beam exposure apparatus and an exposure method.
  • This application is related to the following Japanese patent application. For those designated countries that are allowed to be incorporated by reference to the literature, the contents described in the following application are incorporated into this application by reference and are incorporated in the description of this application.
  • Patent application 2 0 0 1— 0 2 7 0 1 0 Filing date February 2, 2001 Background technology
  • exposure processing is performed using exposure data common to a plurality of electron beam exposure apparatuses. Also, when exposing the same pattern to a wafer in a plurality of electron beam exposure apparatuses, the exposure processing is performed using exposure time data common to the plurality of electron beam exposure apparatuses.
  • an object of the present invention is to provide an electron beam exposure apparatus and an exposure method that can solve the above-mentioned problems. This object is achieved by a combination of features described in the independent claims.
  • the dependent claims define further advantageous embodiments of the present invention. Disclosure of the invention
  • an electron beam exposure apparatus for exposing a pattern on a wafer by using an electron beam, wherein exposure data indicating a pattern to be exposed is obtained.
  • a data memory for storing, receiving the exposure data, a pattern generating section for generating cross-sectional shape information for defining a cross-sectional shape of the electron beam based on the received exposure data, and receiving the cross-sectional shape information;
  • An irradiation time determination unit that determines an irradiation time, which is a time for irradiating the wafer with the electron beam based on the irradiation time.
  • the data memory may further store exposure time data indicating an irradiation time, and the irradiation time determining unit may determine the irradiation time by correcting the exposure time data based on the received cross-sectional shape information.
  • the data memory further includes a pattern data memory storing exposure data including cross-sectional shape identification information that is information for identifying a cross-sectional shape of the electron beam, and storing the cross-sectional shape information in association with the cross-sectional shape identification information.
  • the generator may extract and output the cross-sectional shape information stored in the pattern data memory in association with the cross-sectional shape identification information included in the received exposure data.
  • An electron beam shaping means for shaping the cross-sectional shape of the electron beam is further provided.
  • the pattern data memory stores the shape of the electron beam transferred to the wafer when the electron beam shaping means actually shapes the electron beam based on the exposure data.
  • the apparatus further includes electron beam shaping means for shaping the cross-sectional shape of the electron beam into a rectangle, and the cross-sectional shape information includes information on a length of two sides of a rectangle which is a cross-sectional shape of the electron beam formed by the electron beam shaping means.
  • the pattern generation unit may extract and output the lengths of two sides of the rectangle stored in the pattern data memory based on the cross-sectional shape identification information.
  • the irradiation time determination unit further includes a pattern correction coefficient memory for storing a pattern correction coefficient, which is a correction coefficient for correcting the exposure time based on the cross-sectional shape of the electron beam, in association with the cross-sectional shape information.
  • the cross-sectional shape information output by the pattern generator The irradiation time may be determined based on the pattern correction coefficients stored in the pattern correction coefficient memory in association with each other.
  • the data processing apparatus may further include an exposure sequence control unit that notifies the data memory of an exposure area to be irradiated with the electron beam on the wafer, and the irradiation time determination unit may determine the irradiation time further based on the exposure area.
  • a field data memory for storing a field correction coefficient identification information for identifying a field correction coefficient which is a correction coefficient for correcting an exposure time in the exposure area in association with the exposure area;
  • the control unit may extract and output the field correction coefficient identification information stored in the field data memory in association with the exposure area notified to the data memory.
  • the apparatus further includes a field correction coefficient memory for storing a field correction coefficient in association with the field correction coefficient identification information, and the irradiation time determining unit associates the field correction coefficient identification information output by the exposure sequence control unit with the field correction coefficient memory.
  • the irradiation time may be determined based on the field correction coefficient stored in the field correction coefficient memory.
  • the irradiation time may be determined based on the determined cross-sectional shape information.
  • FIG. 1 shows a configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention.
  • FIG. 2 shows an example of the configuration of the control system 140 according to the present embodiment.
  • FIG. 3 shows an example of the flow of the exposure method according to the present embodiment.
  • FIG. 1 shows a configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention.
  • the electron beam exposure apparatus 100 includes an exposure unit 150 for performing a predetermined exposure process on the wafer 44 with an electron beam, and a control system 1 for controlling the operation of each component included in the exposure unit 150. 40 is provided.
  • the exposure unit 150 generates an electron beam inside the housing 8 and irradiates the wafer 44 with the electron beam forming means 110 for generating a plurality of electron beams and shaping the cross-sectional shape of the electron beam as desired.
  • Irradiation switching means 1 12 for independently switching whether or not to perform for each electron beam; and projection system 1 14 for C which adjusts the direction and size of the image of the pattern transferred to C 4 4
  • An electronic optical system is provided.
  • the exposure unit 150 includes a stage system including a wafer stage 46 on which a wafer 44 on which a pattern is to be exposed is mounted, a wafer for driving the wafer stage 46, and a stage driving unit 48. .
  • the electron beam shaping means 110 includes an electron beam generator 10 for generating a plurality of electron beams, and a first shaping device having a plurality of openings for shaping the cross-sectional shape of the electron beam by passing the electron beam.
  • a first shaping / deflecting section 18 and a second shaping / deflecting section 20 for independently deflecting the electron beam.
  • the electron beam generator 10 has a plurality of electron guns 104 and a substrate 106 on which the electron guns 104 are formed.
  • the electron gun 104 is a power sword that generates thermionic electrons.
  • a Darlid 102 formed to surround the node 12 and stabilizing the thermoelectrons generated by the force source 12.
  • the force sword 12 and the grid 102 are electrically insulated.
  • the electron beam generator 10 forms an electron gun array by providing a plurality of electron guns 104 at predetermined intervals on a base material 106.
  • the first molded member 14 and the second molded member 22 desirably have a grounded metal film of platinum or the like on the surface irradiated with the electron beam.
  • the cross-sectional shape of the plurality of openings included in the first molding member 14 and the second molding member 22 may have a spread along the electron beam irradiation direction in order to efficiently pass the electron beam. . Further, it is preferable that the plurality of openings included in the first molded member 14 and the second molded member 22 be formed in a rectangular shape.
  • the irradiation switching means 1 1 and 2 independently converge a plurality of electron beams and adjust the focus of the electron beam.
  • the second multi-axis electron lens 24 and independently deflect the plurality of electron beams for each electron beam.
  • a blanking electrode array 26 that independently switches whether or not to irradiate the electron beam onto the wafer 44 for each electron beam, and a plurality of openings through which the electron beam passes, the An electron beam shielding member 28 for shielding the deflected electron beam.
  • the blanking electrode array 26 may be a blanking aperture array.
  • the wafer projection system 114 converges multiple electron beams independently and reduces the beam diameter of the electron beam.
  • a fifth multi-axis electron lens 62 that functions as a lens and converges a plurality of electron beams independently.
  • the control system 140 includes a general control unit 130 and an individual control unit 120.
  • the individual control section 120 includes an electron beam control section 80, a multi-axis electron lens control section 82, a shaping deflection control section 84, a blanking electrode array control section 86, and a deflection control section 92.
  • n general controller 1 3 0 and a Wehasute over di controller 9 6, for example, a workstation der
  • each control unit included in the individual control unit 120 is collectively controlled.
  • the electron beam controller 80 controls the electron beam generator 10.
  • the multi-axis electronic lens control unit 82 includes the first multi-axis electronic lens 16, the second multi-axis electronic lens 24, the third multi-axis electronic lens 34, the fourth multi-axis electronic lens 36 and the fifth The current supplied to the multi-axis electron lens 62 is controlled.
  • the molding deflection control unit controls the first molding deflection unit 18 and the second molding deflection unit 20.
  • the blanking electrode array controller 86 controls the voltage applied to the deflection electrodes included in the blanking electrode array 26.
  • the deflection control unit 92 controls the voltage applied to the deflection electrodes of the plurality of deflectors included in the deflection unit 60.
  • Wafer stage control section 96 controls wafer stage drive section 48 to move wafer stage 46 to a predetermined position.
  • the electron beam generator 10 generates a plurality of electron beams.
  • the generated electron beam is applied to the first forming member 14 to be formed.
  • the first multi-axis electron lens 16 independently converges a plurality of rectangularly shaped electron beams, and independently adjusts the focus of the electron beam on the second formed member 22 for each electron beam.
  • the first shaping deflection unit 18 deflects a plurality of rectangularly shaped electron beams to a desired position with respect to the second shaping member independently for each electron beam.
  • the second shaping / deflecting unit 20 deflects the plurality of electron beams deflected by the first shaping / deflecting unit 18 in a direction substantially perpendicular to the second shaping member 22 independently for each electron beam.
  • the second forming member 22 including a plurality of openings having a rectangular shape is configured to emit a plurality of electron beams having a rectangular cross-sectional shape applied to each opening to a desired rectangular shape to be applied to the wafer 44. It is further shaped into an electron beam having a cross-sectional shape.
  • the second multi-axis electron lens 24 converges the plurality of electron beams independently, and performs the focus adjustment of the electron beam to the blanking electrode array 26 independently for each electron beam.
  • the electron beam focused by the second multi-axis electron lens 24 passes through a plurality of apertures included in the blanking electrode array 26.
  • Electrode array controller 86 is formed on blanking electrode array 26 Also, it controls whether or not to apply a voltage to the deflection electrode provided near each aperture.
  • the blanking electrode array 26 switches whether or not to irradiate the electron beam onto the wafer 44 based on the voltage applied to the deflection electrode.
  • the electron beam that is not deflected by the blanking electrode array 26 has its electron beam diameter reduced by the third multi-axis electron lens 34, and passes through the opening included in the electron beam shielding member 28.
  • the fourth multi-axis electron lens 36 independently converges the plurality of electron beams, performs focus adjustment of the electron beam with respect to the deflecting unit 60 independently for each electron beam, and the focus-adjusted electron beam is The light enters the deflector included in the deflecting unit 60.
  • the deflection controller 92 independently controls the plurality of deflectors included in the deflection unit 60.
  • the deflecting unit 60 deflects the plurality of electron beams incident on the plurality of deflectors to a desired exposure position on the wafer 44 independently for each electron beam.
  • the plurality of electron beams that have passed through the deflecting unit 60 are adjusted in focus by the fifth multi-axis electron lens 62, and irradiate the wafer 44.
  • the wafer stage control unit 96 controls the wafer stage drive unit 48 to move the wafer stage 46 in a certain direction.
  • the blanking electrode array control unit 86 determines apertures through which the electron beam passes based on the exposure pattern data, and controls power for each aperture.
  • the aperture through which the electron beam passes is appropriately changed in accordance with the movement of the 44, and the electron beam is deflected by the deflecting unit 60, whereby a desired circuit pattern can be exposed on the wafer 44.
  • FIG. 2 shows an example of the configuration of the control system 140 according to the present embodiment.
  • the control system 140 includes a general control unit 130 and an individual control unit 120.
  • the general control unit 130 includes a central processing unit 132 that controls the control unit 140 in general, and an exposure pattern storage unit 138 that stores an exposure pattern to be exposed to the Ueno 44.
  • An exposure pattern generation unit 134 that generates exposure data that is an exposure pattern in an area to be exposed by each electron beam based on the design data stored in the exposure pattern storage unit 138;
  • An exposure sequence control unit 1442 for controlling a sequence, and a correction unit for correcting an exposure time in the exposure region in association with an exposure region to be irradiated with an electron beam.
  • a field data memory 160 for storing field correction coefficient identification information for identifying a field correction coefficient which is a number
  • a data memory 136 for storing exposure data, and an exposure data are provided for each electron beam.
  • An electron beam correction unit 148 that generates deflection data to be supplied to the molding deflection control unit 84 and the deflection control unit 92 based on the irradiation time.
  • a pattern correction coefficient which is a correction coefficient for correcting the exposure time based on the cross-sectional shape of the electron beam, in association with the irradiation time determining unit 144 to be determined and the cross-sectional shape information defining the cross-sectional shape of the electron beam.
  • Pattern correction coefficient memory 162 that stores the field correction coefficient memory that stores the field correction coefficient in association with the field correction teacher identification information, and determines the irradiation time.
  • 1 4 4 that have a clock generating unit 1 4 6 for generating a blanking clock supplied to the blanking electrode Arei controller 8 6 based on the irradiation time determined by.
  • the electron beam correction unit 148 includes a pattern generation unit 152 that generates cross-sectional shape information that defines the cross-sectional shape of the electron beam based on the exposure data, and a cross-section that is information that identifies the cross-sectional shape of the electron beam
  • a pattern data memory 158 for storing cross-sectional shape information in association with the shape identification information, and a shaping deflection for generating shaping deflection data for the first shaping deflection unit 18 and the second shaping deflection unit 20
  • a deflector correction circuit 156 for generating deflection data for the deflection unit 60.
  • the individual control unit 120 includes a shaping / deflecting control unit 84 that controls the first shaping / deflecting unit 18 and the second shaping / deflecting unit 20; a deflection control unit 92 that controls the deflecting unit 60; A blanking electrode array controller 86 for controlling the ranking electrode array 26.
  • the exposure data generation section 1334 generates exposure data based on the exposure pattern stored in the exposure pattern storage section 1338, and stores it in the data memory 1336.
  • the data memory 136 is preferably a buffer storage unit for temporarily storing exposure data, and stores and outputs the exposure data for each exposure area in the order of exposure.
  • the exposure data includes exposure time data indicating the irradiation time, which is the time for irradiating the electron beam onto the wafer 44, and the interruption of the electron beam. It is preferable to have cross-sectional shape identification information that is information for identifying the surface shape, and information on the exposure position with respect to the exposure region.
  • the exposure sequence control unit 142 instructs the data memory 1336 to specify an exposure area, and outputs exposure data.
  • the pattern generating section 152 extracts the cross-sectional shape information stored in the pattern data memory 158 in association with the cross-sectional shape identification information included in the exposure data received from the data memory 1336. Then, the pattern generating section 152 notifies the extracted cross-sectional shape information to the shaping deflector correction circuit 154 and the deflector correction circuit 156. In addition, the pattern generation unit 152 notifies the irradiation time determination unit 144 of the extracted cross-sectional shape information. Further, the exposure sequence control unit 142 extracts the field correction coefficient identification information stored in the field data memory 160 in association with the exposure area notified to the data memory 136, and the irradiation time determination unit. Notify 1 4 4
  • the irradiation time determination unit 144 extracts the pattern correction coefficient stored in the pattern correction coefficient memory 162 in association with the cross-sectional shape information received from the pattern generation unit 152. Further, the irradiation time determination unit 144 extracts the field correction coefficient stored in the field correction coefficient memory 164 in association with the field correction coefficient identification information received from the exposure sequence control unit 142. . The irradiation time determining unit 144 corrects the exposure time data included in the exposure data using the pattern correction coefficient and the field correction coefficient, and irradiates the electron beam onto the wafer 44. Determine the irradiation time.
  • the pattern correction coefficient and the field correction coefficient are magnifications for correcting the exposure time data
  • the irradiation time determination unit 144 calculates the exposure time data by multiplying the exposure time data by the pattern correction coefficient and the field correction coefficient. Calculate the irradiation time.
  • the clock generation circuit 144 generates a blanking clock to be supplied to the blanking electrode array control unit 86. Generate. Then, the blanking electrode array control unit 86 controls the blanking electrode array 26 using the blanking clock generated by the clock generation circuit 144.
  • the shaping deflector correction circuit 154 based on the cross-sectional shape information received from the pattern generator 152, forms shaping deflection data to be supplied to the shaping deflection controller 84. Generate Then, the shaping / deflecting control unit 84 controls the first shaping / deflecting unit 18 and the second shaping / deflecting unit 20 based on the shaping / deflecting data received from the shaping / deflecting device correction circuit 1554. Further, the deflector correction circuit 156 generates deflection data to be supplied to the deflection control unit 92 based on the exposure position information received from the pattern generation circuit 152. The deflection controller 92 controls the deflection unit 60 based on the deflection data received from the deflector correction circuit 156.
  • the exposure data stored in the data memory 136 is not data unique to the electron beam exposure apparatus 100, but may be data that can be used in another electron beam exposure apparatus.
  • the cross-sectional shape information generated by the pattern generating section 152 is data unique to the electron beam exposure apparatus 100, and is transferred to the wafer 44 when an electron beam is formed by the exposure data. It is preferably determined based on the shape of the electron beam and stored in the pattern data memory 158.
  • the finolade correction coefficient identification information stored in the field data memory 160 is address information of the field correction coefficient memory 164. Further, it is preferable that the field correction coefficient identification information is determined based on the exposure amount when the electron beam is irradiated based on the exposure data, and is stored in the field data memory 160. Further, it is preferable that the field correction coefficient identification information is stored in association with the exposure area so that the exposure amount becomes equal in all the exposure areas.
  • the cross-sectional shape identification information may be the cross-sectional shape information before being corrected, and more preferably, is the address information of the pattern data memory 158 storing the corrected cross-sectional shape information.
  • the cross-sectional shape information may be information on the length of two orthogonal sides of a rectangle which is the cross-sectional shape of the electron beam formed by the electron beam forming means 110.
  • the pattern data memory 158 may store the length of the two sides in association with the cross-sectional shape identification information.
  • the pattern generating unit 152 extracts the length of the two sides stored in the pattern data memory 158 in association with the cross-sectional shape identification information included in the exposure data received from the data memory 1336. May be output.
  • the electron beam exposure apparatus 100 based on the cross-sectional shape information of the electron beam and the exposure area on the wafer! By correcting the irradiation time of the electron beam to the wafer, the pattern can be accurately exposed to the wafer.
  • the pattern data memory 158, field data memory 160, pattern correction coefficient memory 162, and field correction coefficient memory 164 correction processing of the exposure time of the electron beam and exposure Processing can be efficiently performed in parallel.
  • the corrected irradiation time is used for the exposure process without storing it for a long time. Can be greatly reduced.
  • the information stored in the pattern data memory 158 and the field data memory 160 is updated by actually performing the exposure processing, the irradiation time of the electron beam based on the characteristics of each electron beam exposure apparatus is determined. Can be corrected.
  • FIG. 3 shows an example of the flow of the exposure method according to the present embodiment.
  • the exposure data generation section 134 generates exposure data based on the exposure pattern stored in the exposure pattern storage section 138 (S100). Then, when the electron beam is formed by the exposure data, the shape of the electron beam transferred to the wafer is obtained (S102). Then, the pattern data memory 158 stores the cross-sectional shape information determined based on the acquired shape of the electron beam in association with the cross-sectional shape identification information (S104).
  • the pattern generating section 152 extracts the cross-sectional shape information stored in the pattern data memory 158 in association with the cross-sectional shape identification information included in the exposure data (S106). Then, the irradiation time determination unit 144 uses the pattern correction coefficient stored in the pattern correction coefficient memory 162 and the field correction coefficient stored in the field correction coefficient memory 164 to calculate the exposure data. The exposure time data contained in the electronic beam is corrected to determine the irradiation time of the electron beam (S108).
  • the click generation circuit 144 generates a blanking clock based on the irradiation time determined by the irradiation time determination unit 144 (S110).
  • the blanking electrode array controller 86 uses a blanking clock to control the blanking electrode array. 26 is controlled, and the wafer 44 is exposed for the irradiation time determined by the irradiation time determination unit 144 (S112). This is the end of the flow of the exposure method of the present example.
  • the irradiation time of the electron beam to the wafer is corrected based on the cross-sectional shape information of the electron beam and the exposure area on the wafer, so that the pattern on the wafer can be accurately formed. Can be exposed.
  • the pattern data memory 158, field data memory 160, pattern correction coefficient memory 162, and field correction coefficient memory 164 correction processing of the exposure time of the electron beam and exposure Processing can be efficiently performed in parallel.
  • the corrected irradiation time is used for the exposure process without storing it for a long time. The amount of data stored in the device can be significantly reduced.
  • the information stored in the pattern data memory 158 and the field data memory 160 is updated by actually performing the exposure processing, the irradiation time of the electron beam based on the characteristics of each electron beam exposure apparatus is determined. Can be corrected.
  • an electron beam exposure apparatus and an exposure method capable of correcting the irradiation time of an electron beam on a wafer and accurately exposing a pattern on the wafer. Can be.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

L"invention concerne un appareil d"exposition à faisceau d"électrons, destiné à réaliser un motif sur une tranche, comprenant une mémoire de stockage de données d"exposition correspondant au motif à exposer sur la tranche, une section de production de motif recevant les données d"exposition afin de générer une information de forme de section permettant de définir la forme de section d"un faisceau d"électrons en fonction des données d"exposition reçues, et une section de détermination de durée d"irradiation recevant l"information de forme de section afin de déterminer une durée d"irradiation correspondant à la durée d"irradiation de la tranche par le faisceau d"électrons, basée sur l"information de forme de section reçue.
PCT/JP2002/000715 2001-02-02 2002-01-30 Appareil d"exposition a faisceau d"electrons et procede d"exposition WO2002063663A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-27010 2001-02-02
JP2001027010A JP4199425B2 (ja) 2001-02-02 2001-02-02 電子ビーム露光装置及び露光方法

Publications (1)

Publication Number Publication Date
WO2002063663A1 true WO2002063663A1 (fr) 2002-08-15

Family

ID=18891732

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/000715 WO2002063663A1 (fr) 2001-02-02 2002-01-30 Appareil d"exposition a faisceau d"electrons et procede d"exposition

Country Status (2)

Country Link
JP (1) JP4199425B2 (fr)
WO (1) WO2002063663A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03173119A (ja) * 1989-12-01 1991-07-26 Hitachi Ltd 電子線描画装置
JPH04177717A (ja) * 1990-11-09 1992-06-24 Fujitsu Ltd 荷電粒子ビーム露光装置および露光方法
JPH04278516A (ja) * 1991-03-07 1992-10-05 Nec Corp 電子ビーム露光装置
JPH05160009A (ja) * 1991-12-09 1993-06-25 Mitsubishi Electric Corp 荷電ビーム描画装置および荷電ビームによるパターン形成方法
JPH10242025A (ja) * 1997-02-27 1998-09-11 Jeol Ltd 可変面積型電子ビーム描画方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105328B2 (ja) * 1986-11-26 1995-11-13 株式会社東芝 荷電ビ−ム露光装置
JP3330306B2 (ja) * 1997-05-14 2002-09-30 東芝機械株式会社 荷電ビーム描画方法
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
JP2000021731A (ja) * 1998-07-02 2000-01-21 Advantest Corp 荷電粒子ビーム露光装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03173119A (ja) * 1989-12-01 1991-07-26 Hitachi Ltd 電子線描画装置
JPH04177717A (ja) * 1990-11-09 1992-06-24 Fujitsu Ltd 荷電粒子ビーム露光装置および露光方法
JPH04278516A (ja) * 1991-03-07 1992-10-05 Nec Corp 電子ビーム露光装置
JPH05160009A (ja) * 1991-12-09 1993-06-25 Mitsubishi Electric Corp 荷電ビーム描画装置および荷電ビームによるパターン形成方法
JPH10242025A (ja) * 1997-02-27 1998-09-11 Jeol Ltd 可変面積型電子ビーム描画方法

Also Published As

Publication number Publication date
JP4199425B2 (ja) 2008-12-17
JP2002231610A (ja) 2002-08-16

Similar Documents

Publication Publication Date Title
JP5069331B2 (ja) 電子ビーム露光システム
US7041988B2 (en) Electron beam exposure apparatus and electron beam processing apparatus
WO2002058118A1 (fr) Dispositif d'exposition a des faisceaux d'electrons et dispositif de deviation de faisceaux d'electrons
JP3658235B2 (ja) 電子銃および電子銃を用いた描画装置および電子線応用装置
US9336980B2 (en) Electron beam writing apparatus, and method for adjusting convergence half angle of electron beam
JP4156862B2 (ja) 電子ビーム露光装置及び電子ビーム処理装置
JP4301724B2 (ja) 電子ビーム露光装置及び電子レンズ
JP4246373B2 (ja) 電子ビーム生成装置及び電子ビーム露光装置
JP4959723B2 (ja) 電子銃及び電子ビーム露光装置
JP2002289517A (ja) 電子ビーム近接露光装置及び方法
WO2002063663A1 (fr) Appareil d"exposition a faisceau d"electrons et procede d"exposition
JP4112791B2 (ja) 電子ビーム補正方法及び電子ビーム露光装置
WO2002041372A1 (fr) Systeme d'exposition a un faisceau electronique, procede d'exposition a un faisceau electronique et procede de production d'elements semi-conducteurs
JP2005026241A (ja) 電子ビーム生成装置、及び電子ビーム露光装置
WO2002061812A1 (fr) Dispositif d'exposition a des faisceaux electroniques et lentille a electrons
JP2002150989A (ja) 電子ビーム露光装置及び電子レンズ
KR102255028B1 (ko) 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법
JP7192254B2 (ja) マルチ荷電粒子ビーム描画装置及びその調整方法
US20020038853A1 (en) Electron beam exposure apparatus
JPS62160648A (ja) 集束イオンビ−ム装置
JP2002260988A (ja) 電子ビーム露光装置、電子ビーム成形装置、及び電子ビーム露光方法
JP2004039457A (ja) 電子ビーム生成装置、電子ビーム露光装置、及び電子ビーム制御方法
JP2003323858A (ja) 電子ビーム処理装置及び電子ビーム形状測定方法
JP2002190447A (ja) 電子ビーム露光装置
WO2002052623A1 (fr) Systeme d'exposition d'un faisceau d'electrons et element d'etalonnage de la positon d'irradiation du faisceau d'electrons

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): DE US

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642