JP4959723B2 - 電子銃及び電子ビーム露光装置 - Google Patents
電子銃及び電子ビーム露光装置 Download PDFInfo
- Publication number
- JP4959723B2 JP4959723B2 JP2008552979A JP2008552979A JP4959723B2 JP 4959723 B2 JP4959723 B2 JP 4959723B2 JP 2008552979 A JP2008552979 A JP 2008552979A JP 2008552979 A JP2008552979 A JP 2008552979A JP 4959723 B2 JP4959723 B2 JP 4959723B2
- Authority
- JP
- Japan
- Prior art keywords
- electron
- electron source
- tip
- source
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010894 electron beam technology Methods 0.000 title claims description 37
- 230000001133 acceleration Effects 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000004075 alteration Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/065—Construction of guns or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06308—Thermionic sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06375—Arrangement of electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Electron Sources, Ion Sources (AREA)
Description
(電子ビーム露光装置の構成)
図1に、本実施形態に係る電子ビーム露光装置の構成図を示す。
(電子銃の構成)
図2に電子銃101の構成図を示す。電子銃101は、電子源20、カーボン製の電子源加熱用発熱体22、支持具23、サプレッサ電極24、加速電極21とを有している。電子源20は、例えば単結晶のLaB6またはCeB6を用いる。
(電子源の構成)
以下に、本実施形態で使用する電子源20の構成について説明する。
(電子源の表面に電子放出を制限する領域を形成する方法)
次に、上記の電子放出を制限する領域を電子源20に形成する方法について説明する。
(効果)
以上説明したように、本実施形態では、電子源20の露出した先端部分に大きな電界を与えることができるため、電子放射面から高輝度の電子放射を達成でき、本電子銃を電子ビーム露光装置に用いることにより、高いスループットを実現することができる。
Claims (4)
- 六ホウ化ランタン(LaB6)又は六ホウ化セリウム(CeB6)からなる電子源と、サプレッサ電極と、加速電極とを備えた電子銃において、
前記電子源の先端部が前記サプレッサ電極と前記加速電極との間に配置され、
前記電子源は、電子放出領域と電子放出制限領域とを有し、
前記電子放出制限領域は、前記電子源の先端部の電子放出面以外の該電子源側面であって、カーボンで覆われており、
前記電子源の先端部が前記サプレッサ電極上面から2.5mm以上突き出していて、前記電子源の先端部と前記加速電極との距離が5mm以下に配置されることを特徴とする電子銃。 - 前記電子源は、その先端部が直径10μm〜100μmの円柱形状からなることを特徴とする請求項1に記載の電子銃。
- 前記電子源は、直径が10μm〜100μmの円柱形状からなる先端部と、上面と上面より面積の広い底面を有するテーパ状の側面を有する中間部と、軸方向に垂直な断面部の最大長さが前記先端部の直径より長く2mm以下の円柱又は角柱形状からなる本体部からなり、前記中間部上面と前記先端部の電子放出面に対向する端面を同一面とし、前記中間部の底面と前記本体部の端面を同一面とし、前記先端部、前記中間部及び前記本体部は中心軸を同一にして一体となっていることを特徴とする請求項1に記載の電子銃。
- 請求項1から3のいずれか一項に記載の電子銃を有することを特徴とする電子ビーム露光装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/050214 WO2008084537A1 (ja) | 2007-01-11 | 2007-01-11 | 電子銃及び電子ビーム露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008084537A1 JPWO2008084537A1 (ja) | 2010-04-30 |
JP4959723B2 true JP4959723B2 (ja) | 2012-06-27 |
Family
ID=39608440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008552979A Active JP4959723B2 (ja) | 2007-01-11 | 2007-01-11 | 電子銃及び電子ビーム露光装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4959723B2 (ja) |
TW (1) | TW200836228A (ja) |
WO (1) | WO2008084537A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5363413B2 (ja) * | 2010-05-10 | 2013-12-11 | 電気化学工業株式会社 | 電子源 |
EP2444990B1 (en) | 2010-10-19 | 2014-06-25 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Simplified particle emitter and method of operating thereof |
CN111048383B (zh) * | 2018-10-12 | 2021-01-15 | 中国电子科技集团公司第三十八研究所 | 电子源和电子枪 |
CN112786416A (zh) * | 2021-03-03 | 2021-05-11 | 大束科技(北京)有限责任公司 | 发射尖端及热场发射电子源 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0719744B2 (ja) * | 1990-05-18 | 1995-03-06 | 株式会社東芝 | 電子ビーム露光方法 |
JPH10321120A (ja) * | 1997-05-15 | 1998-12-04 | Nikon Corp | 電子銃 |
-
2007
- 2007-01-11 JP JP2008552979A patent/JP4959723B2/ja active Active
- 2007-01-11 WO PCT/JP2007/050214 patent/WO2008084537A1/ja active Application Filing
- 2007-12-26 TW TW096150244A patent/TW200836228A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TWI362050B (ja) | 2012-04-11 |
WO2008084537A1 (ja) | 2008-07-17 |
TW200836228A (en) | 2008-09-01 |
JPWO2008084537A1 (ja) | 2010-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4685115B2 (ja) | 電子ビーム露光方法 | |
JP5065903B2 (ja) | 露光方法 | |
US7091504B2 (en) | Electron beam exposure system | |
JPH09139344A (ja) | 低輝度を有する電子ビーム・リソグラフィ・システム | |
US6593686B1 (en) | Electron gun and electron beam drawing apparatus using the same | |
US7041988B2 (en) | Electron beam exposure apparatus and electron beam processing apparatus | |
JP3859437B2 (ja) | 荷電ビーム露光装置 | |
JP4298399B2 (ja) | 電子線装置及び該電子線装置を用いた電子線描画装置 | |
JP4959723B2 (ja) | 電子銃及び電子ビーム露光装置 | |
JP2016197503A (ja) | 電子ビーム装置 | |
JP5159035B2 (ja) | レンズアレイ及び該レンズアレイを含む荷電粒子線露光装置 | |
CN109709771B (zh) | 多带电粒子束描绘装置 | |
JP5373329B2 (ja) | 荷電粒子ビーム描画装置 | |
JP6966317B2 (ja) | カソード | |
KR20080100158A (ko) | 전자총, 전자빔 노광 장치 및 노광 방법 | |
JP4975095B2 (ja) | 電子銃及び電子ビーム露光装置 | |
JP2012044191A (ja) | 電子銃及び電子ビーム露光装置 | |
JP7480918B1 (ja) | マルチ荷電粒子ビーム描画装置 | |
JP7192254B2 (ja) | マルチ荷電粒子ビーム描画装置及びその調整方法 | |
JP3703774B2 (ja) | 荷電ビーム露光装置、荷電ビームを用いた露光方法およびこの露光方法を用いた半導体装置の製造方法 | |
JP7468795B1 (ja) | マルチ荷電粒子ビーム描画装置 | |
JP2004228309A (ja) | 荷電ビーム制御方法、これを用いた半導体装置の製造方法および荷電ビーム露光装置 | |
JP2001189144A (ja) | 電子ビームコラム用4極管電子銃 | |
JPH0636724A (ja) | 荷電粒子線装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120116 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120306 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120321 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150330 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4959723 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |