WO2008084537A1 - 電子銃及び電子ビーム露光装置 - Google Patents

電子銃及び電子ビーム露光装置 Download PDF

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Publication number
WO2008084537A1
WO2008084537A1 PCT/JP2007/050214 JP2007050214W WO2008084537A1 WO 2008084537 A1 WO2008084537 A1 WO 2008084537A1 JP 2007050214 W JP2007050214 W JP 2007050214W WO 2008084537 A1 WO2008084537 A1 WO 2008084537A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron
electron source
distal end
electrode
exposure device
Prior art date
Application number
PCT/JP2007/050214
Other languages
English (en)
French (fr)
Inventor
Hiroshi Yasuda
Takeshi Haraguchi
Yoshinori Terui
Seiichi Sakawa
Ryozo Nonogaki
Original Assignee
Advantest Corporation
Denki Kagaku Kogyo Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation, Denki Kagaku Kogyo Kabushiki Kaisha filed Critical Advantest Corporation
Priority to PCT/JP2007/050214 priority Critical patent/WO2008084537A1/ja
Priority to JP2008552979A priority patent/JP4959723B2/ja
Priority to TW096150244A priority patent/TW200836228A/zh
Publication of WO2008084537A1 publication Critical patent/WO2008084537A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/065—Construction of guns or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06375—Arrangement of electrodes

Abstract

本願は輝度を向上した電子銃とそれを用いることにより、スループットを向上した電子ビーム露光装置に関するものである。 六ホウ化ランタン（ＬａＢ6）又は六ホウ化セリウム（ＣｅＢ6）からなる電子源（２０）と、サプレッサ電極（２４）と加速電極（２１）からなる電子銃において、前記電子源の先端部が前記サプレッサ電極と前記加速電極との間に配置され、前記電子源は、電子放出領域と電子放出制限領域を有し、前記電子放出制限領域は、前記電子源先端部の電子放出面以外の該電子源側面であって、カーボン（３０）で覆われている。前記電子源は、その先端部が直径１０μｍ～１００μｍの円柱形状からなるようにしても良く、前記電子源の先端部が前記サプレッサ電極上面から２．５ｍｍ以上突き出していて、電子源先端と加速電極との距離が５ｍｍ以下に配置されるようにしても良い。
PCT/JP2007/050214 2007-01-11 2007-01-11 電子銃及び電子ビーム露光装置 WO2008084537A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2007/050214 WO2008084537A1 (ja) 2007-01-11 2007-01-11 電子銃及び電子ビーム露光装置
JP2008552979A JP4959723B2 (ja) 2007-01-11 2007-01-11 電子銃及び電子ビーム露光装置
TW096150244A TW200836228A (en) 2007-01-11 2007-12-26 Electron gun and electron beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/050214 WO2008084537A1 (ja) 2007-01-11 2007-01-11 電子銃及び電子ビーム露光装置

Publications (1)

Publication Number Publication Date
WO2008084537A1 true WO2008084537A1 (ja) 2008-07-17

Family

ID=39608440

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/050214 WO2008084537A1 (ja) 2007-01-11 2007-01-11 電子銃及び電子ビーム露光装置

Country Status (3)

Country Link
JP (1) JP4959723B2 (ja)
TW (1) TW200836228A (ja)
WO (1) WO2008084537A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2444990A1 (en) * 2010-10-19 2012-04-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Simplified particle emitter and method of operating thereof
CN112786416A (zh) * 2021-03-03 2021-05-11 大束科技(北京)有限责任公司 发射尖端及热场发射电子源

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5363413B2 (ja) * 2010-05-10 2013-12-11 電気化学工業株式会社 電子源
CN111048383B (zh) * 2018-10-12 2021-01-15 中国电子科技集团公司第三十八研究所 电子源和电子枪

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03114215A (ja) * 1990-05-18 1991-05-15 Toshiba Corp 電子ビーム露光方法
JPH10321120A (ja) * 1997-05-15 1998-12-04 Nikon Corp 電子銃

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03114215A (ja) * 1990-05-18 1991-05-15 Toshiba Corp 電子ビーム露光方法
JPH10321120A (ja) * 1997-05-15 1998-12-04 Nikon Corp 電子銃

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2444990A1 (en) * 2010-10-19 2012-04-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Simplified particle emitter and method of operating thereof
TWI485740B (zh) * 2010-10-19 2015-05-21 Integrated Circuit Testing 簡化之粒子發射器及該發射器之操作方法
US10699867B2 (en) 2010-10-19 2020-06-30 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Simplified particle emitter and method of operating thereof
CN112786416A (zh) * 2021-03-03 2021-05-11 大束科技(北京)有限责任公司 发射尖端及热场发射电子源

Also Published As

Publication number Publication date
JP4959723B2 (ja) 2012-06-27
TWI362050B (ja) 2012-04-11
JPWO2008084537A1 (ja) 2010-04-30
TW200836228A (en) 2008-09-01

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