WO2008102435A1 - 電子銃、電子ビーム露光装置及び露光方法 - Google Patents

電子銃、電子ビーム露光装置及び露光方法 Download PDF

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Publication number
WO2008102435A1
WO2008102435A1 PCT/JP2007/053101 JP2007053101W WO2008102435A1 WO 2008102435 A1 WO2008102435 A1 WO 2008102435A1 JP 2007053101 W JP2007053101 W JP 2007053101W WO 2008102435 A1 WO2008102435 A1 WO 2008102435A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron
emitting surface
beam exposure
electron beam
gun
Prior art date
Application number
PCT/JP2007/053101
Other languages
English (en)
French (fr)
Inventor
Hiroshi Yasuda
Takeshi Haraguchi
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Priority to PCT/JP2007/053101 priority Critical patent/WO2008102435A1/ja
Priority to DE112007000045T priority patent/DE112007000045T5/de
Priority to JP2007557258A priority patent/JP4685115B2/ja
Priority to TW097105718A priority patent/TW200849306A/zh
Priority to US12/075,067 priority patent/US20080211376A1/en
Publication of WO2008102435A1 publication Critical patent/WO2008102435A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48—Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/063—Geometrical arrangement of electrodes for beam-forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/075—Electron guns using thermionic emission from cathodes heated by particle bombardment or by irradiation, e.g. by laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H01J2237/06316—Schottky emission

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

本発明は、電子銃に関して、電子を放出する電子源の熱による昇華量を削減し、長期間安定に使用することを課題とする。 本発明の電子銃は、電子源（２０）の電子放出面と対向して配置され電子を加速する加速電極（２５）と、電子放出面と加速電極との間に配置され電子放出面に向かって光軸上に中心を持つ球状の凹面を有し当該電子放出面から電子を引き出す引き出し電極（２１）と、電子放出面の引き出し電極と反対側に配置され電子源の側面からの電子放出を抑制するサプレッサー電極（２４）とを有し、電子源の材料の昇華が発生しない程度の低い温度に保ちながら電子放出面に電界を印加して熱電界放射電子を放出させる。
PCT/JP2007/053101 2007-02-20 2007-02-20 電子銃、電子ビーム露光装置及び露光方法 WO2008102435A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/JP2007/053101 WO2008102435A1 (ja) 2007-02-20 2007-02-20 電子銃、電子ビーム露光装置及び露光方法
DE112007000045T DE112007000045T5 (de) 2007-02-20 2007-02-20 Elektronenkanone, Elektronenstrahl-Bestrahlungsgerät und Bestrahlungsverfahren
JP2007557258A JP4685115B2 (ja) 2007-02-20 2007-02-20 電子ビーム露光方法
TW097105718A TW200849306A (en) 2007-02-20 2008-02-19 Electron gun, electron beam exposure apparatus, and exposure method
US12/075,067 US20080211376A1 (en) 2007-02-20 2008-03-07 Electron gun, electron beam exposure apparatus, and exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/053101 WO2008102435A1 (ja) 2007-02-20 2007-02-20 電子銃、電子ビーム露光装置及び露光方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/075,067 Continuation US20080211376A1 (en) 2007-02-20 2008-03-07 Electron gun, electron beam exposure apparatus, and exposure method

Publications (1)

Publication Number Publication Date
WO2008102435A1 true WO2008102435A1 (ja) 2008-08-28

Family

ID=39709721

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/053101 WO2008102435A1 (ja) 2007-02-20 2007-02-20 電子銃、電子ビーム露光装置及び露光方法

Country Status (5)

Country Link
US (1) US20080211376A1 (ja)
JP (1) JP4685115B2 (ja)
DE (1) DE112007000045T5 (ja)
TW (1) TW200849306A (ja)
WO (1) WO2008102435A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192456A (ja) * 2010-03-12 2011-09-29 Horon:Kk 荷電粒子線装置
TWI724803B (zh) * 2019-04-18 2021-04-11 日商日立全球先端科技股份有限公司 電子源及荷電粒子束裝置

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1947674B1 (en) * 2005-11-08 2015-06-17 Advantest Corporation Electron gun, electron beam exposure system and exposure method
JP2008041289A (ja) * 2006-08-02 2008-02-21 Hitachi High-Technologies Corp 電界放出型電子銃およびそれを用いた電子線応用装置
EP2264738B1 (en) * 2009-06-18 2017-12-06 Carl Zeiss NTS Ltd. Electron gun used in a particle beam device
TWI410757B (zh) * 2010-06-18 2013-10-01 Univ Nat Taiwan An electron beam exposure apparatus, an electron beam generating apparatus, and an exposure method
EP2444990B1 (en) * 2010-10-19 2014-06-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Simplified particle emitter and method of operating thereof
US8581481B1 (en) * 2011-02-25 2013-11-12 Applied Physics Technologies, Inc. Pre-aligned thermionic emission assembly
EP2779201A1 (en) * 2013-03-15 2014-09-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High brightness electron gun, system using the same, and method of operating the same
US10133181B2 (en) * 2015-08-14 2018-11-20 Kla-Tencor Corporation Electron source
FR3048846B1 (fr) * 2016-03-08 2018-04-13 Pantechnik Dispositif de modulation de l'intensite d'un faisceau de particules d'une source de particules chargees
US10096447B1 (en) * 2017-08-02 2018-10-09 Kla-Tencor Corporation Electron beam apparatus with high resolutions
CN110400731A (zh) * 2018-04-24 2019-11-01 大连纳晶科技有限公司 空心阴极旁热式六硼化镧电子束枪
DE102018123100A1 (de) 2018-09-20 2020-03-26 Thales Deutschland GmbH Electron Devices Elektronenkanone
KR102523388B1 (ko) * 2018-09-25 2023-04-20 주식회사 히타치하이테크 열전계 방출 전자원 및 전자빔 응용 장치
CN113678224A (zh) * 2019-07-23 2021-11-19 株式会社Param 电子枪装置
US11417492B2 (en) 2019-09-26 2022-08-16 Kla Corporation Light modulated electron source
US11562879B2 (en) * 2020-09-15 2023-01-24 Nuflare Technology, Inc. Low-blur electrostatic transfer lens for multi-beam electron gun
CN112802728A (zh) * 2021-01-18 2021-05-14 万华化学集团电子材料有限公司 一种基于固态电解质的氧离子源、离子注入机及其在制备soi晶片中的应用
US11640896B2 (en) * 2021-05-13 2023-05-02 Nuflare Technology, Inc. Method and apparatus for Schottky TFE inspection

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0631059U (ja) * 1990-12-28 1994-04-22 日本電子株式会社 電子線装置
JPH06139983A (ja) * 1992-10-28 1994-05-20 Nikon Corp 荷電粒子線装置
JP2001325910A (ja) * 2000-05-16 2001-11-22 Denki Kagaku Kogyo Kk 電子銃とその使用方法
JP2003016987A (ja) * 2001-06-26 2003-01-17 Hitachi Ltd ショットキー電子銃及び電子線装置
JP2005190758A (ja) * 2003-12-25 2005-07-14 Denki Kagaku Kogyo Kk 電子源

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2582991Y2 (ja) * 1992-09-16 1998-10-15 株式会社堤製作所 表面処理用電極
JPH0831332A (ja) * 1994-07-13 1996-02-02 Hitachi Ltd カラー陰極線管
JPH08184699A (ja) 1994-12-28 1996-07-16 Hitachi Medical Corp 高エネルギ電子加速器用電子銃

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0631059U (ja) * 1990-12-28 1994-04-22 日本電子株式会社 電子線装置
JPH06139983A (ja) * 1992-10-28 1994-05-20 Nikon Corp 荷電粒子線装置
JP2001325910A (ja) * 2000-05-16 2001-11-22 Denki Kagaku Kogyo Kk 電子銃とその使用方法
JP2003016987A (ja) * 2001-06-26 2003-01-17 Hitachi Ltd ショットキー電子銃及び電子線装置
JP2005190758A (ja) * 2003-12-25 2005-07-14 Denki Kagaku Kogyo Kk 電子源

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192456A (ja) * 2010-03-12 2011-09-29 Horon:Kk 荷電粒子線装置
TWI724803B (zh) * 2019-04-18 2021-04-11 日商日立全球先端科技股份有限公司 電子源及荷電粒子束裝置

Also Published As

Publication number Publication date
US20080211376A1 (en) 2008-09-04
JPWO2008102435A1 (ja) 2010-05-27
DE112007000045T5 (de) 2010-04-22
TW200849306A (en) 2008-12-16
JP4685115B2 (ja) 2011-05-18

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