WO2002041375A1 - Procedes et dispositfs de transfert et d'exposition et procede servant a fabriquer un composant - Google Patents
Procedes et dispositfs de transfert et d'exposition et procede servant a fabriquer un composant Download PDFInfo
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- WO2002041375A1 WO2002041375A1 PCT/JP2001/009973 JP0109973W WO0241375A1 WO 2002041375 A1 WO2002041375 A1 WO 2002041375A1 JP 0109973 W JP0109973 W JP 0109973W WO 0241375 A1 WO0241375 A1 WO 0241375A1
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- WIPO (PCT)
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- mask
- reticle
- substrate
- gas
- foreign matter
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
Definitions
- the present invention relates to a transfer method and an apparatus, an exposure method and an apparatus, and a device manufacturing method.
- the present invention relates to a method and an apparatus for transferring a substrate on which a pattern is formed, and more particularly to a method for manufacturing an electronic device such as a semiconductor element, a liquid crystal display element, an imaging element (such as a CCD), or a thin film magnetic head. It is used for the exposure method and its apparatus.
- an electronic device such as a semiconductor element, a liquid crystal display element, an imaging element (such as a CCD), or a thin film magnetic head.
- a photomask as a substrate, which is drawn by enlarging the pattern to be formed by about 4 to 5 times, or A method of exposing and transferring a pattern of a reticle (hereinafter, collectively referred to as a “mask”) onto a substrate to be exposed such as a wafer using a projection exposure apparatus such as a stepper is used.
- a thin film called a pellicle is mounted on the mask to prevent foreign substances such as dust from adhering to the pattern area.
- the pellicle is usually formed of a transparent thin film-like member having a thickness of several hundred nm to several meters and containing an organic substance such as nitrocellulose as a main component.
- an organic substance such as nitrocellulose as a main component.
- the wavelength of an exposure beam has been shifted to a shorter wavelength side in order to cope with miniaturization of a semiconductor integrated circuit.
- the KrF excimer laser (248 nm), ArF Ri Na to use exposure light source having a short wavelength such as an excimer laser (1 9 3 nm), further F 2, single The one (1 5 7 nm) that uses a projection exposure as the light in the vacuum ultraviolet region of shorter The device is also in the stage of practical use.
- the present invention has been made in view of the above circumstances, and has as its object to provide a transfer method and a transfer device that can prevent attachment of minute foreign matter and keep a substrate being transferred in a clean state.
- Another object of the present invention is to provide an exposure method, an exposure apparatus, and a device manufacturing method capable of improving throughput and exposure accuracy. Disclosure of the invention
- the transfer method of the present invention is the transfer method for transferring a substrate, wherein, during the transfer of the substrate, the substrate is accommodated in a space filled with a predetermined gas; A predetermined force is applied to the foreign matter near the surface to move the foreign matter away from the surface of the substrate, and the surface of the substrate together with the predetermined gas supplied into the space. Foreign matter separated from the surface is discharged out of the space.
- a predetermined force is applied to a foreign substance adhering to the surface of the substrate being transferred or a foreign substance near the surface of the substrate, so that the foreign substance is separated from the surface of the substrate, and the foreign substance is separated from the surface of the substrate or the vicinity thereof. Remove foreign objects. Furthermore, the substrate is accommodated in a space to which a predetermined gas is supplied, and foreign substances separated from the surface of the substrate are discharged together with the predetermined gas. The amount of foreign substances inside is reduced.
- the predetermined gas may be supplied before the substrate is accommodated in the space, or may be supplied after the foreign matter has left the surface of the substrate.
- the foreign substance adhering to the substrate or the surface of the substrate may be vibrated by a sound wave or an ultrasonic wave. In this case, when the substrate or the foreign matter vibrates, the foreign matter attached to the surface of the substrate is easily separated from the surface. .
- the foreign matter is easily separated from the surface of the substrate, and the reattachment of the foreign matter due to the electrostatic force is suppressed.
- the mask in the exposure method of irradiating an exposure beam onto a mask having a pattern formed thereon and transferring the pattern of the mask onto an object, the mask is accommodated in a space to which a predetermined gas is supplied.
- a predetermined force is applied to the foreign matter adhering to the surface of the mask or a foreign matter near the surface of the mask to separate the foreign matter from the surface of the mask; and the mask together with the predetermined gas supplied into the space Foreign matter separated from the surface is discharged out of the space.
- a predetermined force is applied to a foreign matter attached to the surface of the mask being transferred or a foreign matter near the surface of the mask, so that the foreign matter is separated from the surface of the mask. Remove foreign matter from or near the mask surface. Further, the mask is accommodated in a space where a predetermined gas is supplied, and foreign substances separated from the surface of the mask are discharged together with the predetermined gas, so that reattachment of the foreign substances to the mask is prevented, and The amount of foreign matter in the space is reduced. According to Thus, the mask mounted on the exposure apparatus main body is kept in a clean state.
- the predetermined gas may be supplied before the substrate is accommodated in the space, or may be supplied after the foreign matter has left the surface of the substrate.
- the mask is a mask on which a protection member for protecting a surface on which the pattern is formed is not mounted, the exposure beam is an energy beam having a wavelength of 200 nm or less, and the predetermined gas is It may be a transmission gas having low energy absorption with respect to the exposure beam. In this case, exposure using a short-wavelength exposure light source can be performed.
- the mask may be transported into the space using the transport method of the present invention. In this case, the mask conveyed into the space is kept clean.
- the transfer method of the present invention is a transfer device for transferring a substrate, wherein: a container for housing the substrate in a space to which a predetermined gas is supplied; a foreign substance attached to a surface of the substrate; A foreign matter removing device that applies a predetermined force to the foreign matter to separate the foreign matter from the surface of the substrate, and discharges the foreign matter separated from the surface of the substrate together with the predetermined gas from the container.
- a transfer device of the type described above can be realized by a transfer device of the type described above.
- the exposure method of the present invention is directed to an exposure apparatus that irradiates an exposure beam onto a mask on which a pattern is formed and transfers the pattern of the mask onto an object, wherein the mask is accommodated in a space to which a predetermined gas is supplied.
- the present invention can be realized by the exposure apparatus of the present invention, which includes a foreign matter removing device that discharges together with the predetermined gas from the mask chamber.
- FIG. 2 is a sectional view showing a second embodiment of the transport device according to the present invention.
- FIG. 3A and FIG. 3B are perspective views showing examples of the configuration of the ejection nozzle.
- FIG. 4 is a sectional view showing a third embodiment of the transfer device according to the present invention.
- FIG. 5 is a sectional view showing a fourth embodiment of the transfer device according to the present invention.
- FIG. 6 is a sectional view showing a fifth embodiment of the transfer device according to the present invention.
- FIG. 7 is a sectional view showing one embodiment of the exposure apparatus according to the present invention.
- FIG. 8 is a cross-sectional view showing a state in which a foreign matter removing device is provided in the reticle chamber.
- FIG. 9 is a flowchart of an embodiment of the device manufacturing method according to the present invention. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 shows a first embodiment of a transfer apparatus according to the present invention.
- This transfer apparatus HI is a method for exposing a photomask (hereinafter referred to as a reticle R) on which a circuit pattern is formed as a substrate to an exposure method described later. It is for transporting into the apparatus main body.
- a photomask hereinafter referred to as a reticle R
- the transfer device HI includes a reticle transfer chamber 10 for accommodating the reticle R being transferred, a reticle loader 11 that holds the reticle R and moves in a predetermined direction, and a reticle R for removing foreign matter attached to the reticle R.
- the apparatus includes a foreign matter removing device 12 and the like.
- the operation of the transfer device HI consists of a microcomputer (or minicomputer) that includes a CPU (central processing unit), ROM (read only memory), RAM (random 'access' memory), etc. It is totally controlled by the device 60.
- the reticle transfer chamber 10 is formed of a space surrounded by a partition wall 20, and the partition wall 20 is formed with openings 20 a and 2 Ob for carrying out and carrying in the reticle R.
- the openings 20 a and 20 b have a structure that can be opened and closed by doors 21 and 22.
- the doors 21 and 22 are controlled to open and close by a main controller 60 via a drive system (not shown).
- the reticle R transported by the transport device H1 is used for a projection exposure apparatus using an exposure beam in a vacuum ultraviolet region.
- Light in the vacuum ultraviolet region (hereinafter referred to as vacuum ultraviolet light)
- the light energy is absorbed by substances such as oxygen molecules, water molecules, carbon dioxide molecules, and organic substances (hereinafter referred to as light-absorbing substances) contained in the air. Therefore, for the purpose of preventing the light absorbing substance from adhering to the reticle R, the reticle transfer chamber 10 is replaced with a predetermined gas.
- a replacement gas used for this gas replacement a gas that transmits light in a vacuum ultraviolet region (a substance having almost no energy absorption), for example, nitrogen gas (N 2 ), helium (H e), neon (N e), a rare gas consisting of argon (Ar), krypton (Kr), xenon (Xe), and radon (Rn) are used.
- nitrogen gas and the rare gas will be collectively referred to as “permeated gas”.
- the partition wall 20 of the reticle transfer chamber 10 is provided with an air supply valve 23 and an exhaust valve 24.
- the air supply valve 23 is connected to a gas supply device 25 (not shown) via an air supply line
- the exhaust valve 24 is connected to a gas discharge device 26 via an exhaust line.
- the reticle transfer chamber 10 is provided with a concentration sensor 27 for measuring the concentration of a predetermined substance (here, a light absorbing substance) in the reticle transfer chamber 10.
- the gas supply device 25, the gas discharge device 26, and the concentration sensor 27 are each controlled by the main control device 60.
- the gas supply device 25 includes a cylinder in which the above-described permeated gas (for example, helium gas) is compressed or liquefied in a high-purity state and stored, a pipe for gas supply, and a flow control valve (all not shown). And the like, and is configured to supply a permeated gas into the reticle transfer chamber 10 under the control of the main controller 60.
- the gas discharge device 26 includes a gas discharge pipe, a vacuum pump for exhausting the gas inside the housing through the pipe, and an opening / closing valve (both not shown). Under the control of 0, gas is discharged from the reticle transfer chamber 10.
- concentration sensor 27 for example, an oxygen concentration meter, a dew point meter as a water vapor concentration meter, a compound sensor combining a carbon dioxide sensor, and the like, a device such as a mass spectrometer are used. The timing of gas supply / discharge operation is controlled based on the measurement result of the concentration sensor.
- the reticle loader 11 comprises a robot arm for carrying in and out the reticle R through the opening 20a with respect to the second space SP2 adjacent to the reticle transfer chamber 10. Note that the first space SP 1 outside the door 22 is also A reticle transport system (not shown), which includes a robot arm for loading and unloading the reticle R, is provided.
- the reticle loader 11 suction-holds the periphery of the area where the reticle R pattern is formed (pattern area PA) with the reticle R pattern surface down. Further, the reticle loader 11 is provided with an opening 11 a so that the pattern area PA of the reticle R is exposed to a space (lower space) in the reticle transfer chamber 10.
- the reticle R transported by the transport device HI is used in a projection exposure apparatus using an exposure beam in the vacuum ultraviolet region.
- an organic thin film called a pellicle for preventing foreign matter from adhering to the pattern area PA is mounted via a pellicle frame. It is not mounted on the reticle R in this example because the energy absorption for the luminous flux in the ultraviolet region is extremely large. That is, in reticle transfer chamber 10, the pattern surface of reticle R (pattern area PA) is exposed to the atmosphere in reticle transfer chamber 10.
- the foreign matter removing device 12 is intended to remove, in particular, foreign matter that has adhered to or is about to adhere to the reticle R in the powder region PA.
- the reticle R is transported from a space that is more contaminated than the reticle transport chamber 10, that is, a space in which foreign matter floats.
- the foreign matter includes, for example, a minute foreign matter that is disposed in the first space SP1 and that is generated from the reticle transport mechanism / member surface.
- the foreign matter removing device 12 includes a gas supply device 30 for flowing the above-described permeated gas (such as helium gas) along the pattern surface of the reticle R, and a reticle transfer chamber 1 for transmitting the permeated gas flowing along the pattern surface of the reticle R.
- a gas discharge device 31 that discharges gas from the inside to the outside is provided.
- the gas supply device 30 for removing foreign matter has substantially the same configuration as the gas supply device 25 for gas replacement described above.
- the gas supply device 30 in which the above-described permeated gas is compressed or liquefied in a high-purity state and stored is used.
- the gas discharge device 31 for removing foreign substances has substantially the same configuration as the gas discharge device 26 for gas replacement described above. Pipes, vacuum pumps for exhausting the gas inside the housing through these pipes, open / close valves (both not shown), etc., as well as foreign matter separated from the surface of the reticle R pattern surface together with the gas. It has a gas suction nozzle 33 for suction.
- the gas flow forming nozzle 32 and the gas suction nozzle 33 are positioned below the reticle R being transported and on the pattern surface. It is arranged close to.
- the timing of the gas supply / discharge operation in the foreign matter removing device 12 and the flow rate thereof are controlled by the main controller 60.
- a filter HEPA filter, ULPA filter, etc.
- a light absorbing substance absorbing gas, etc.
- the permeated gas may be circulated through such a filter.
- main controller 60 replaces the inside of reticle transport chamber 10 with the above-described permeated gas. That is, the main controller 60 opens the air supply valve 23 and drives the gas supply device 25 to supply the permeated gas into the reticle transfer chamber 10, and at the same time, opens the exhaust valve 24 to release the gas. The discharge device 26 is driven to discharge gas from the reticle transfer chamber 10. Main controller 60 adjusts a flow control valve (not shown) so that the gas supply amount and the gas discharge amount per unit time at this time are substantially the same.
- Whether or not the inside of the reticle transfer chamber 10 has been replaced with the permeated gas may be determined based on the measurement result of the concentration of the light absorbing substance in the gas exhausted from the reticle transfer chamber 10 by the concentration sensor 27. As a result, the reticle transfer chamber 10 is filled with the permeated gas, and the light absorbing material is reduced.
- main controller 60 moves reticle R from reticle transfer system (not shown) in first space SP 1 holding reticle R into reticle transfer chamber 10. Starts transporting.
- the door 22 provided on the partition wall 20 is opened. Open. At this time, the opening 20a at the boundary between the reticle transfer chamber 10 and the second space SP2 is closed by the door 21.
- main controller 60 transmits reticle R from reticle transport system in first space SP 1 holding reticle R to reticle loader 11 in reticle transport chamber 10 through opening 20b. Hand over. After the delivery of reticle R is completed, main controller 60 closes door 22. As a result, a space with a high degree of sealing is formed in the reticle transfer chamber 10. That is, the reticle scale is housed in the reticle transfer chamber 10 which is a closed chamber filled with the permeated gas.
- main controller 60 removes foreign matter adhering to reticle R by foreign matter removing device 12. That is, the main controller 60 drives the gas supply device 30 to supply the gas for removing foreign matter (the above-described permeation gas) toward the reticle R, and drives the gas discharge device 31 to drive the reticle. Discharge the gas flowing from Kuru R to the outside. At this time, a gas flow is formed along the pattern surface of the reticle R by the gas flow forming nozzle 32, and foreign matter adhering to the pattern surface of the reticle R is caused by the force of the gas flow, for example, below the pattern surface. Alternatively, they are separated in the horizontal direction along the gas flow.
- Such foreign matter removal by the foreign matter removing device 12 is continuously performed while the reticle R is stored in the reticle transfer chamber 10. That is, a gas flow is formed along the pattern surface of the reticle R regardless of whether the reticle loader 11 is stopped or moving. That is, the pattern surface of reticle R is always covered with the gas from gas supply device 30. For this reason, a small foreign substance generated from the surface of the mechanical unit disposed in the reticle transfer chamber 10 or the surface of the member may newly adhere to the pattern surface of the reticle R, or a foreign substance separated from the pattern surface may adhere again. Is prevented. Foreign matter contained in the gas is immediately discharged to the outside by the gas discharge device 31, so that the amount of foreign matter in the reticle transfer chamber 10 is reduced.
- the reticle to be transported does not have a pellicle, the size of foreign matter that is allowed to adhere to the pattern surface is extremely small, but foreign matter (including light absorbing material) is reduced.
- the pattern surface of the reticle being transported is always kept clean.
- the main controller 60 opens the door 21 and opens the door 21.
- the reticle R is carried into the reticle transport system in the second space SP 2 by the reticle loader 11. Further, the reticle opening 11 is returned to the reticle transfer chamber 10 through the opening 20a, and the door 21 is closed.
- the reticle R can be transported from the first space SP1 to the second space SP2 via the reticle transport chamber 10 while the pattern surface is always kept clean.
- the reticle transfer chamber 10 is provided with the air supply valve 23, the gas supply device 25, the exhaust valve 24, and the gas discharge device 26, but the gas flow forming nozzle 32 is constituted.
- the gas supply pipe is provided with an air supply valve 23, and the gas exhaust pipe constituting the gas suction nozzle 33 is provided with an exhaust valve 24, and the gas supply device 25, the gas exhaust device 26, and their piping are omitted. It is also possible.
- FIGS. 2, 3A and 3B a second embodiment of the transport device according to the present invention will be described with reference to FIGS. 2, 3A and 3B. 2, 3A, and 3B, the same reference numerals are given to portions corresponding to FIG. 1 and the description thereof is omitted.
- the transfer device H2 of the second embodiment is different from the above embodiment in that a gas ejection device 40 for ejecting gas to the surface of the reticle R as a foreign matter removing device, and a reticle transfer device for the gas colliding on the surface of the reticle R.
- the gas ejection device 40 is for locally ejecting a predetermined gas (here, a permeated gas) having an increased pressure onto the pattern surface of the reticle R, and has an ejection nozzle 42 for adjusting the flow of the ejection gas. are doing.
- a predetermined gas here, a permeated gas
- the gas discharge device 41 has a gas suction nozzle 43 for efficiently sucking gas in the vicinity of where gas is blown out by the gas blowout device 40.
- the gas is ejected from the gas ejection device 40 to collide the gas with the pattern surface of the reticle R. At this time, the foreign matter is easily separated from the pattern surface of the reticle R by the force of the gas jet. Then, the foreign matter separated from the pattern surface of the reticle R is discharged to the outside by the gas discharge device 41 together with the gas.
- the ejection nozzle 42 of the gas ejection device 40 and the reticle R may be relatively moved. That is, the ejection nozzle 42 is fixed at a predetermined position, and the reticle R mounted on the reticle opening 11 is moved with respect to the ejection nozzle 42, or conversely, the ejection is performed by a predetermined driving device. It is preferable to move or rotate the nozzle 42 along the pattern surface of the reticle R.
- the plurality of ejection nozzles 41 may be separately arranged inside the reticle transfer chamber 10 such as the openings 20 a and 20 b of the reticle transfer chamber 10 and the center of the reticle transfer chamber 10. Good. Further, the gas jetted by the gas jetting device 40 may be heated to a high temperature to increase the energy of the gas jet.
- FIG. 4 a third embodiment of the transport device according to the present invention will be described with reference to FIG. 4, the same reference numerals are given to the portions corresponding to FIG. 1, and the description thereof will be omitted.
- the transport device H3 of the third embodiment is different from each of the above embodiments and includes a reticle R or a sound wave generator 45 for applying a sound wave or an ultrasonic wave to the surface of the reticle R.
- the sound wave generator 45 includes a screwdriver for generating sound waves, a power supply, a transmitter, and the like.
- the vibrator for example, a piezoelectric vibrator (such as crystal), an electrostrictive vibrator, a magnetostrictive vibrator, a sound generator, and the like are used.
- Reticle R or a method of applying sound waves or ultrasonic waves to the surface of reticle R
- the above-mentioned vibrator is brought into direct contact with the reticle loader 11 holding the reticle R ⁇ the reticle R, or the sound wave from the above-mentioned vibrator is brought into contact with the reticle R in a non-contact manner using the gas in the reticle transfer chamber 10 as a medium. Or give it.
- a sound wave may be applied to the gas supplied from the gas supply device 30 for removing foreign matter, and the gas may be applied to the reticle R.
- the timing of generating the sound wave, its frequency, and its intensity are controlled by main controller 60.
- the reticle R is vibrated (micro vibration) by applying a sound wave to the reticle R or the reticle loader 11 by the sound wave generator 45.
- the vibration of the reticle R facilitates the detachment of the foreign matter from the surface of the reticle R, for example, the foreign matter adhering to the surface of the reticle R easily falls.
- the frequency, intensity, and duration of the sound wave are determined so that the reticle R and the reticle loader 11 will not be affected.
- a sound wave or an ultrasonic wave is used to vibrate the reticle R, but the reticle R may be vibrated using other means.
- the reticle transfer chamber 10 is provided with a vibration isolating structure, or a vibration isolating member is provided between the reticle transfer chamber 10 and other devices. It is good to arrange.
- FIG. 5 portions corresponding to those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.
- the transport device H4 of the fourth embodiment is different from each of the above embodiments, and includes a static eliminator (ionizer) 47 that removes static electricity charged on the surface of the reticle R.
- a static eliminator (ionizer) 47 that removes static electricity charged on the surface of the reticle R.
- the ionizer 47 for example, one that generates positive and negative ions for neutralization using corona discharge, one that emits X-rays (soft X-rays, etc.) or ⁇ rays into gas to generate ionized ions, and the like are used.
- the present invention is not limited to these.
- the ionizer 47 is arranged, for example, to discharge ions for static elimination into the piping path of the gas supply device 30 for removing foreign substances, and to send the ions to the pattern surface of the reticle R together with the gas for removing foreign substances. . It may be arranged such that ions for static elimination are emitted (remote irradiation) toward the pattern surface of the reticle R without passing through the gas supply device 30.
- the ionizer 47 is used to transport the reticle R.
- Static electricity appearing on the turn surface is removed without contact.
- the foreign matter is easily separated from the surface of the reticle R, and the adhesion (or re-adhesion) of the foreign matter due to the electrostatic force is suppressed.
- Static electricity is generated due to friction between the surface of the reticle R and the gas during transport, separation of objects due to the transfer operation of the reticle R, and the like. Therefore, it is preferable that the above static elimination is always performed on the reticle R.
- FIG. 6 portions corresponding to FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.
- the transport device H5 of the fifth embodiment is different from the above embodiments in that a protective member 50 for covering the pattern surface of the reticle R is attached to the reticle loader 11, and an inner space covered by the protective member 50 is provided.
- the gas for removing foreign matter (here, the above-described permeated gas) is configured to always flow. That is, the transfer device H5 is provided with a substantially closed space that covers the pattern surface of the reticle R and that is separate from the reticle transfer chamber 10, and the space is kept in a pure state free of foreign matter.
- the gas supply pipe 51 and the discharge pipe 52 for supplying the gas for removing foreign substances may have flexible structures.
- the pattern surface of the reticle R is covered by the protection member 50, the pattern surface is provided with a mechanism part in the reticle transfer chamber 10 and a member surface. It is possible to prevent the foreign matter generated from the surface from adhering.
- the protective member 50 forms a substantially closed narrow space covering the surface of the reticle R, and the space moves integrally with the reticle R. Therefore, during the transportation of the reticle R, the reticle R It is possible to reliably maintain the gas in contact with the pattern surface in a clean state.
- the transfer device shown in each of the above-described embodiments is used, for example, in the projection exposure apparatus shown in FIG.
- the exposure apparatus shown in FIG. 7 irradiates a reticle R as a mask with an exposure beam LB in a vacuum ultraviolet region, and transfers a pattern of the reticle R onto a wafer W as an object via a projection optical system PL.
- repeat type reduction projection exposure equipment That is, it is a stepper.
- FIG. 7 is a diagram showing a schematic configuration of the projection exposure apparatus of the present example.
- the mechanical parts of the projection exposure apparatus are an illumination system 100, a reticle operation unit 101, a projection optical system PL, and a wafer operation unit 102.
- the illumination system 100, the reticle operation unit 101, the projection optical system PL, and the wafer operation unit 102 are respectively provided inside an illumination system chamber 105, a reticle chamber 106, a lens barrel 107, and a wafer chamber 108 each having a box-shaped airtight structure. It is housed in a state where it is isolated from outside air (here, gas in a chamber described later).
- the projection exposure apparatus as a whole is housed in one large chamber (not shown) in which the temperature of the gas inside is controlled within a predetermined target range.
- the operation of the projection exposure system is controlled by a microcomputer (or minicomputer) that includes a CPU (central processing unit), ROM (read only memory), RAM (random access memory), etc. It is totally controlled by the device 60.
- a microcomputer or minicomputer
- CPU central processing unit
- ROM read only memory
- RAM random access memory
- the device 60 is totally controlled by the device 60.
- the direction perpendicular to the plane of FIG. 2 is the X direction
- the direction perpendicular to the X direction in the plane is the Y direction
- the direction parallel to the optical axis of the projection optical system PL Is described below as the Z direction. It is assumed that the scanning direction of the reticle R and the wafer W at the time of exposure in this example is the Y direction.
- a light source that emits light belonging to the vacuum ultraviolet region with a wavelength of about 120 ⁇ m to about 180 nm for example, a fluorine laser (F 2 laser) with an oscillation wavelength of 157 nm, Krypton dimer lasers with an oscillation wavelength of 146 nm (Kr 2 laser) and argon dimer lasers with an oscillation wavelength of 126 nm (Ar 2 laser) are used.
- a fluorine laser F 2 laser
- Krypton dimer lasers with an oscillation wavelength of 146 nm Krypton dimer lasers with an oscillation wavelength of 146 nm
- Ar 2 laser argon dimer lasers with an oscillation wavelength of 126 nm
- an ArF xima laser having an oscillation wavelength of 193 nm may be used as a light source.
- the exposure beam LB emitted from the exposure light source 200 into the illumination system chamber 105 is reflected by the mirror 201, and an automatic tracking unit (not shown) for adjusting the optical axis shift due to vibration or the like, and shaping the cross-sectional shape of the exposure beam LB.
- the light is incident on a fly-eye lens (or rod lens) 203 as an optical integrator (homogenizer) through a beam shaping optical system (not shown) that performs light and light control.
- An aperture stop (not shown) is arranged on the exit surface of the fly-eye lens 203, and most of the exposure beam LB emitted from the fly-eye lens 203 and passing through the aperture stop is a beam.
- the light is reflected by the split lens 204 and reaches the field stop (reticle blind) 206 through the relay lens 205.
- a light amount monitor 210 composed of a photoelectric conversion element is arranged on the transmitted light path of the beam splitter 204.
- the arrangement surface of the field stop 206 is almost conjugate with the pattern surface of the reticle R to be exposed, and the field stop 206 is used to define the shape of the illumination area such as a long and narrow rectangle on the pattern surface. It has a fixed blind and a movable blind that closes its illumination area at the start and end of scanning exposure to prevent exposure to unnecessary parts.
- the exposure beam LB that has passed through the field stop 206 is reticked via a relay lens 207, a mirror 208, a transmission window 209 fixed to the tip of the illumination system chamber 105, and the like. Illuminates a rectangular (slit-shaped) illumination area on the pattern surface of R with a uniform illuminance distribution.
- the illumination system 100 is constituted by the above-described exposure light source 2000 and a plurality of optical members from the mirror 201 to the transmission window 209.
- the optical path of the exposure beam LB in the illumination system 100 that is, the optical path from the exposure light source 200 to the transmission window 209 is in a space whose degree of sealing is increased by the illumination system chamber 105.
- reticle R is held on reticle stage 220.
- the reticle stage 220 continuously moves the reticle R in the Y direction on a reticle base (not shown), and reduces synchronization errors with the wafer stage 230 described later in the X, Y, and rotation directions.
- Drive reticle R as described above.
- the position and rotation angle of reticle stage 220 are measured with high precision by a laser interferometer (not shown), and reticle stage 220 is driven based on the measured values and control information from main controller 60.
- a reticle operation unit 101 is composed of a reticle stage 220, a reticle base (not shown), a reticle loader, and the like.
- the optical path from 9 to the projection optical system PL is in a space whose degree of sealing is increased by the reticle chamber 106.
- the projection optical system PL the object plane (reticle R) side and the image plane (wafer W) side are both telecentric and have a circular projection visual field, and a plurality of optical glass materials such as quartz or fluorite are used. A refraction optical system having a reduction magnification having the above optical element is used.
- the plurality of optical elements constituting the optical system are housed in a lens barrel 107, and the projection optical system PL
- the optical path from the optical element on the reticle R side to the optical element on the wafer W side is in a space where the degree of sealing is increased by the lens barrel 107.
- the image of the pattern in the illumination area of the reticle R is projected through the projection optical system PL through a projection magnification] 3 (3 is, for example, 1/4, 1 / 5), and is projected onto the wafer W coated with the photosensitive material (photoresist).
- the wafer W is a disk-shaped substrate such as a semiconductor (silicon or the like) or SOI (silicon on insulator).
- the wafer W is sucked and held on the mounting surface on the wafer holder 230.
- the wafer holder 230 is fixed on a wafer stage 231, which is a stage device arranged on the image plane side of the projection optical system PL, and the wafer stage 231, on a wafer base (not shown) in the Y direction. It is configured to continuously move the wafer W at a time and to move the wafer W stepwise in the X direction and the Y direction.
- Wafer stage 2 3 1 position in X and Y directions, rotation angle around X axis (pitching amount), rotation angle around Y axis (rolling amount), and rotation angle around Z axis (jowing amount) ) Is measured with high accuracy by a laser interferometer 2 32, and the wafer stage 2 31 is driven via a drive unit (not shown) based on the measured values and control information from the main controller 60. .
- the wafer operation unit 102 is constituted by the wafer holder 230, the wafer stage 231, the wafer base, and the driving device, and is located at a position apart from the wafer operation unit 102 (for example, X from the wafer operation unit 102). (A position distant in the direction), a wafer transfer system 233 such as a wafer loader is arranged. Further, the upper part of the wafer operation unit 102 and the lower side surface of the projection optical system PL are covered with a cover constituting the wafer chamber 108, and are in a space with a high degree of sealing inside.
- the image of the pattern formed on the reticle R is held on the wafer stage 231, by irradiating the reticle R held on the reticle stage 220 with the exposure beam LB. Exposure to transfer to wafer W is performed.
- Reference numerals 181 to 187 denote air supply valves for controlling the supply of permeated gas to the respective internal spaces, and reference numerals ⁇ 1 to ⁇ 7 denote exhaust valves for controlling the discharge of gas from the internal spaces. It is.
- a reticle transport path 240 having a space filled with the above-described permeated gas is provided between the reticle library RL for storing the reticle R and the reticle chamber 106.
- the reticle library R L has a plurality of shelves in which the reticles R are stored, and the internal space is filled with the above permeated gas at a predetermined pressure.
- the reticle transport path 240 is composed of first and second reticle transport chambers 241, 242 divided into two, of which the second reticle transport chamber 241 adjacent to the reticle chamber 106 has the transport shown in FIG.
- the reticle transfer chamber 10 provided in the device HI.
- the first reticle transfer chamber 242 disposed between the second reticle transfer chamber 241 and the reticle library RL also has substantially the same configuration as the reticle transfer chamber i0 of the transfer apparatus HI shown in FIG. . That is, the transfer apparatus HI shown in FIG. 1 transfers the reticle R from the first reticle transfer chamber 242 on the reticle library RL side to the reticle chamber 106 of the exposure apparatus main body in the projection exposure apparatus.
- the reticle R to be transported in this example does not have a pellicle. Therefore, the size of foreign matter that is allowed to adhere to the pattern surface is extremely small.
- the pattern surface of the reticle R being transferred is always kept in a clean state by the foreign substance removing apparatus. It is possible to omit the process related to the foreign substance inspection of the reticle R when the reticle R is transferred into the chamber 106).
- the configuration in which the first and second reticle transfer chambers 241 and 242 are provided with the transfer device HI has been described, but the first and second reticle transfer chambers 241 and 242 have the same structure. Either one may be provided with the transport device H1.
- the reticle R being transported may have an organic substance attached thereto in addition to the foreign matter. Therefore, as another embodiment, it is desirable to provide an optical cleaning device that generates ultraviolet light in the transport path and optically clean the reticle R during transport.
- the transfer device H1 may be provided in the first reticle transfer chamber 241
- the light cleaning device 250 may be provided in the second reticle transfer chamber 242.
- This light washing device 250 is provided with a laser light source that generates ultraviolet light, a low-pressure mercury lamp or an ultraviolet lamp, and the ultraviolet light includes ArF (193 nm), KrF (248 nm), XeCl (308 nm) and the like are used.
- the first reticle transfer chamber 24 1 may be provided with an optical cleaning device 250 and the second reticle transfer room 24 2 may be provided with a transfer device H 1, or the first and second reticle transfer rooms
- An optical cleaning device and a foreign matter detection device may be provided in each of the components 2 41 and 2 42.
- a foreign matter detection device for detecting foreign matter attached to the reticle R may be provided in the first reticle transfer chamber 241, and a transfer device HI may be provided in the second reticle transfer chamber 242.
- the foreign matter removal device provided in the transfer device H1 of the second reticle transfer chamber 2442 allows the foreign matter adhering to the pattern surface of the reticle R (a size small enough to affect the pattern transfer). The size that does not affect the pattern transfer can be ignored).
- the transfer device H1 may be provided in the first reticle transfer chamber 241, and the above-described foreign matter detection device may be provided in the second reticle transfer chamber 2432.
- the foreign matter removal device provided in the transfer device HI of the second reticle transfer chamber 242 allows the foreign matter attached to the pattern surface of the reticle R (the size of the foreign matter to be small enough to affect the pattern transfer, The size of the reticle can be ignored if the size does not affect the pattern transfer.) If there is no foreign matter on the pattern surface of the reticle R, the first reticle transfer chamber 2 The foreign matter removal operation in 41 can be omitted. In this projection exposure apparatus, the foreign matter removing operation is performed on the pattern surface of the reticle R even in the reticle chamber 106. That is, as shown in FIG.
- a foreign matter removal device 250 is provided in the reticle chamber 106. It is preferable that the foreign matter removing device 250 be disposed at a position where the reticle R is retracted from the optical path of the exposure beam LB. By providing the foreign matter removing device at the retracted position of the reticle R, it is possible to suppress the removed foreign matter from adhering to a member on the optical path of the exposure beam.
- the timing at which foreign matter is removed from the reticle R in the reticle chamber 106 may be, for example, when a predetermined time has elapsed, when the reticle R is replaced, or the like. By periodically removing foreign matter from the pattern surface of the reticle R, the pattern surface of the reticle R is kept clean even after being loaded into the reticle chamber 106.
- foreign matter removal may be performed at the time of wafer exchange or every time the one-shot scan exposure operation is completed, that is, every time the movement of the reticle R stops.
- the pattern surface of the reticle R can be always kept in a clean state by using the foreign matter removing device even during the transfer or after the reticle is stored in the reticle chamber 106. Therefore, exposure failure due to foreign matter can be prevented, and exposure accuracy can be improved.
- one or more inventions can be obtained by extracting each constituent element or each constituent element described in the present embodiment singly or in combination.
- a reticle without a pellicle is used because vacuum ultraviolet light is used as an exposure beam.
- the present invention is not limited to this. That is, when an exposure beam that is not absorbed by an organic substance is used, a reticle equipped with a pellicle made of an organic substance thin film may be used.
- organic thin film pellicles As a material, a material mainly composed of quartz, for example, crystals such as fluorine-doped quartz, fluorite, magnesium fluoride, lithium fluoride, etc., in which hydroxyl groups are eliminated to less than about 1 Oppm and fluorine is contained about 1%
- a thin plate made of a material having a thickness of about 300 to 100 may be used.
- the foreign matter attached to the pellicle surface can be removed.
- the reticle R was transferred into the reticle transfer chamber 10 after the reticle transfer chamber 10 was replaced with gas, but the reticle R was transferred to the reticle transfer chamber 10 before the reticle.
- the inside of the transfer chamber 10 may be replaced with gas.
- the substrate to be transported in the present invention is not limited to a reticle, but is also applied to a substrate to be exposed, for example, a glass plate.
- the above-described foreign matter removal may be always performed on each reticle R stored in the reticle library RL shown in FIG.
- the above-described foreign matter removing device may be installed inside a storage box called a “Smift box” for storing a reticle for transporting the reticle, and the above-described foreign matter removal may be always performed on the reticle in the box. Good.
- the reticle in the reticle transfer chamber is cleaned not only by physically removing foreign particles (particle removal) but also by guiding illumination light of a predetermined wavelength to the reticle transfer chamber. You may do so.
- An exposure apparatus to which the present invention is applied includes a scanning exposure method (for example, a step-and-scan method) in which a mask (reticle) and a substrate (wafer) are relatively moved with respect to exposure illumination light (exposure beam).
- a scanning exposure method for example, a step-and-scan method
- a static exposure method in which the pattern of the mask is transferred onto the substrate while the mask and the substrate are almost stationary, for example, a step-and-repeat method may be used.
- the present invention can be applied to a step-and-stitch type exposure apparatus that transfers a pattern to each of a plurality of shot areas whose peripheral portions overlap on a substrate.
- the optical system may be any of a reduction system, an equal magnification system, and an enlargement system, and may be any of a refraction system, a catadioptric system, and a reflection system. Further, the present invention can be applied to a proximity type exposure apparatus that does not use a projection optical system, for example.
- Exposure apparatus to which the present invention is applied g-ray as the exposure beam, i-rays, K r F excimer Marais one laser light (2 4 8 nm), A r F excimer laser beam (1 9 3 nm), F 2 Les monodentate light (1 5 7 nm), laser light, and not only the ultraviolet light, such as a r 2 laser beam, E UV light for example, X-rays, or the like charged particle beam such as an electron beam or an ion beam using You may.
- the light source for exposure is not limited to a mercury lamp or an excimer laser, but may be a harmonic generator such as a YAG laser or a semiconductor laser, an S ⁇ R, a laser plasma light source, an electron gun, or the like.
- the exposure apparatus to which the present invention is applied is not limited to semiconductor device manufacturing, but includes liquid crystal display devices, display devices, thin-film magnetic heads, imaging devices (such as CCDs), micromachines, and microchips such as DNA chips. It may be used for manufacturing a device (electronic device) or for manufacturing a photomask / reticle used in an exposure apparatus.
- a linear motor is used for the wafer stage / reticle stage described above, either an air levitation type using an air bearing or a magnetic levitation type using Lorentz force or reactance force may be used.
- the stage may be a type that moves along a guide or a guideless type that does not have a guide.
- one of the magnet unit (permanent magnet) and the armature unit is connected to the stage, and the other of the magnet unit and the armature unit is connected to the moving surface of the stage. It may be provided on the side (base).
- the reaction force generated by the movement of the wafer stage may be mechanically released to the floor (ground) using a frame member, as described in Japanese Patent Application Laid-Open No. 8-166475.
- the present invention is also applicable to an exposure apparatus having such a structure.
- the reaction force generated by the movement of the reticle stage may be mechanically released to the floor (ground) by using a frame member, as described in Japanese Patent Application Laid-Open No. 8-330224.
- the present invention is also applicable to an exposure apparatus having such a structure.
- the exposure apparatus to which the present invention is applied includes the components described in the claims of the present application. It is manufactured by assembling various subsystems including, so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electrical systems before and after assembly Is adjusted to achieve electrical accuracy.
- the process of assembling the exposure apparatus from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an individual assembly process for each subsystem before the assembly process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustments are made to ensure the various accuracy of the entire exposure apparatus. It is desirable to manufacture the exposure apparatus in a clean room in which the temperature, cleanliness, etc. are controlled.
- FIG. 9 is a flowchart of an example of manufacturing a device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin-film magnetic head, a micromachine, etc.).
- a device a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin-film magnetic head, a micromachine, etc.
- step 301 design step
- function and performance design of the device for example, circuit design of a semiconductor device
- a pattern for realizing the function is designed.
- step 302 mask manufacturing step
- step 303 wafer manufacturing step
- a wafer is manufactured using a material such as silicon.
- step 304 wafer processing step
- an actual circuit or the like is formed on the wafer by lithography technology or the like.
- step 304 device assembling step
- step 305 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) as necessary.
- step 3 06 inspection step
- Inspections such as operation confirmation test and durability test of the selected device are performed. After these steps, the device is completed and shipped.
- the transfer method or the transfer apparatus of the present invention it is possible to reduce foreign matter in the space for accommodating the substrate, remove foreign matter from the surface of the substrate or near the surface thereof, and prevent the foreign matter from re-adhering.
- the substrate being transported can be kept clean.
- the exposure method or the method of manufacturing an exposure apparatus or device of the present invention the substrate being transported is always kept in a clean state, thereby eliminating foreign substance inspection of the substrate when transported into the exposure apparatus main body. Throughput can be improved.
- by maintaining the substrate being transported or being mounted on the exposure apparatus main body in a clean state exposure accuracy can be improved.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2002543682A JPWO2002041375A1 (ja) | 2000-11-15 | 2001-11-15 | 搬送方法及びその装置、露光方法及びその装置、並びにデバイスの製造方法 |
AU2002223125A AU2002223125A1 (en) | 2000-11-15 | 2001-11-15 | Method and device for transfer, method and device for exposure, and method of manufacturing device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-347993 | 2000-11-15 | ||
JP2000347993 | 2000-11-15 |
Publications (1)
Publication Number | Publication Date |
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WO2002041375A1 true WO2002041375A1 (fr) | 2002-05-23 |
Family
ID=18821642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/009973 WO2002041375A1 (fr) | 2000-11-15 | 2001-11-15 | Procedes et dispositfs de transfert et d'exposition et procede servant a fabriquer un composant |
Country Status (3)
Country | Link |
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JP (1) | JPWO2002041375A1 (ja) |
AU (1) | AU2002223125A1 (ja) |
WO (1) | WO2002041375A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005354025A (ja) * | 2004-05-13 | 2005-12-22 | Tokyo Electron Ltd | 基板搬送機構、該基板搬送機構を備える基板搬送装置、基板搬送機構のパーティクル除去方法、基板搬送装置のパーティクル除去方法、該方法を実行するためのプログラム、及び記憶媒体 |
JP2007180549A (ja) * | 2005-12-27 | 2007-07-12 | Asml Netherlands Bv | リソグラフィ装置および方法 |
US7897305B2 (en) | 2005-12-27 | 2011-03-01 | Lg Display Co., Ltd. | Method for forming pattern and method for fabricating LCD device using the same |
JP2011237718A (ja) * | 2010-05-13 | 2011-11-24 | Toppan Printing Co Ltd | 露光装置 |
JP2012138364A (ja) * | 2005-02-25 | 2012-07-19 | Cymer Inc | Euvプラズマ源ターゲット供給システム |
JP2014007417A (ja) * | 2009-08-07 | 2014-01-16 | Nikon Corp | 露光装置及び露光方法、並びにデバイス製造方法 |
US8735051B2 (en) | 2010-12-14 | 2014-05-27 | Nikon Corporation | Exposure method and exposure apparatus, and device manufacturing method |
JP2015511769A (ja) * | 2012-03-14 | 2015-04-20 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
KR20190117685A (ko) * | 2017-02-24 | 2019-10-16 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템 |
CN110858553A (zh) * | 2018-08-23 | 2020-03-03 | 细美事有限公司 | 基板处理装置及方法 |
KR102242026B1 (ko) * | 2020-06-29 | 2021-04-19 | 피엠씨글로벌 주식회사 | 내부공간에 질소가스가 주입되는 포토마스크 케이스 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109874A (ja) * | 1991-10-18 | 1993-04-30 | Fujitsu Ltd | 液中搬送装置及び回収装置 |
JPH05114540A (ja) * | 1991-10-23 | 1993-05-07 | Fujitsu Ltd | レチクル搬送装置 |
JPH08316284A (ja) * | 1995-05-15 | 1996-11-29 | Sony Corp | フォトマスクの搬送装置 |
JP2000049081A (ja) * | 1998-07-31 | 2000-02-18 | Nikon Corp | 荷電粒子線投影露光装置 |
-
2001
- 2001-11-15 JP JP2002543682A patent/JPWO2002041375A1/ja not_active Withdrawn
- 2001-11-15 AU AU2002223125A patent/AU2002223125A1/en not_active Abandoned
- 2001-11-15 WO PCT/JP2001/009973 patent/WO2002041375A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109874A (ja) * | 1991-10-18 | 1993-04-30 | Fujitsu Ltd | 液中搬送装置及び回収装置 |
JPH05114540A (ja) * | 1991-10-23 | 1993-05-07 | Fujitsu Ltd | レチクル搬送装置 |
JPH08316284A (ja) * | 1995-05-15 | 1996-11-29 | Sony Corp | フォトマスクの搬送装置 |
JP2000049081A (ja) * | 1998-07-31 | 2000-02-18 | Nikon Corp | 荷電粒子線投影露光装置 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005354025A (ja) * | 2004-05-13 | 2005-12-22 | Tokyo Electron Ltd | 基板搬送機構、該基板搬送機構を備える基板搬送装置、基板搬送機構のパーティクル除去方法、基板搬送装置のパーティクル除去方法、該方法を実行するためのプログラム、及び記憶媒体 |
JP4623715B2 (ja) * | 2004-05-13 | 2011-02-02 | 東京エレクトロン株式会社 | 基板搬送機構及び該基板搬送機構を備える基板搬送装置 |
JP2012138364A (ja) * | 2005-02-25 | 2012-07-19 | Cymer Inc | Euvプラズマ源ターゲット供給システム |
JP2007180549A (ja) * | 2005-12-27 | 2007-07-12 | Asml Netherlands Bv | リソグラフィ装置および方法 |
US7897305B2 (en) | 2005-12-27 | 2011-03-01 | Lg Display Co., Ltd. | Method for forming pattern and method for fabricating LCD device using the same |
JP2014007417A (ja) * | 2009-08-07 | 2014-01-16 | Nikon Corp | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2015179295A (ja) * | 2009-08-07 | 2015-10-08 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
JP2011237718A (ja) * | 2010-05-13 | 2011-11-24 | Toppan Printing Co Ltd | 露光装置 |
JP2014195099A (ja) * | 2010-12-14 | 2014-10-09 | Nikon Corp | 露光装置及びデバイス製造方法 |
US8735051B2 (en) | 2010-12-14 | 2014-05-27 | Nikon Corporation | Exposure method and exposure apparatus, and device manufacturing method |
US9575417B2 (en) | 2010-12-14 | 2017-02-21 | Nikon Corporation | Exposure apparatus including a mask holding device which holds a periphery area of a pattern area of the mask from above |
JP2015511769A (ja) * | 2012-03-14 | 2015-04-20 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
KR20190117685A (ko) * | 2017-02-24 | 2019-10-16 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템 |
KR102534203B1 (ko) * | 2017-02-24 | 2023-05-19 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템 |
CN110858553A (zh) * | 2018-08-23 | 2020-03-03 | 细美事有限公司 | 基板处理装置及方法 |
CN110858553B (zh) * | 2018-08-23 | 2023-08-11 | 细美事有限公司 | 基板处理装置及方法 |
KR102242026B1 (ko) * | 2020-06-29 | 2021-04-19 | 피엠씨글로벌 주식회사 | 내부공간에 질소가스가 주입되는 포토마스크 케이스 |
Also Published As
Publication number | Publication date |
---|---|
AU2002223125A1 (en) | 2002-05-27 |
JPWO2002041375A1 (ja) | 2004-03-25 |
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