WO2005036622A1 - 基板搬送装置、露光装置、並びにデバイス製造方法 - Google Patents
基板搬送装置、露光装置、並びにデバイス製造方法 Download PDFInfo
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- WO2005036622A1 WO2005036622A1 PCT/JP2004/014856 JP2004014856W WO2005036622A1 WO 2005036622 A1 WO2005036622 A1 WO 2005036622A1 JP 2004014856 W JP2004014856 W JP 2004014856W WO 2005036622 A1 WO2005036622 A1 WO 2005036622A1
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- Prior art keywords
- substrate
- liquid
- transport
- transport mechanism
- arm
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
Definitions
- Substrate transfer apparatus for exposure apparatus, exposure apparatus, and device manufacturing method
- the present invention relates to a technique for filling at least a part of a space between a projection optical system and a substrate with a liquid and exposing a pattern on the substrate via the projection optical system and the liquid, and particularly relates to a substrate transfer device and an exposure device. And a device manufacturing method.
- Semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate.
- An exposure apparatus used in the photolithography process has a mask stage for supporting a mask and a substrate stage for supporting a substrate, and sequentially moves the mask stage and the substrate stage to project a pattern of the mask through a projection optical system. Transfer to the substrate.
- further improvement in the resolution of the projection optical system has been desired in order to cope with higher integration of device patterns.
- the resolution of the projection optical system increases as the exposure wavelength used decreases and as the numerical aperture of the projection optical system increases.
- the exposure wavelength used in the exposure apparatus is becoming shorter year by year, and the numerical aperture of the projection optical system is also increasing.
- the mainstream exposure wavelength is 248 nm of KrF excimer laser, but 193 nm of shorter wavelength ArF excimer laser is also being put to practical use.
- the depth of focus (DOF) is as important as the resolution.
- the resolution and the depth of focus ⁇ are respectively represented by the following equations.
- ⁇ is the exposure wavelength
- ⁇ is the numerical aperture of the projection optical system
- k and k are process coefficients.
- a liquid immersion method disclosed in Patent Document 1 below has been proposed.
- the space between the lower surface of the projection optical system and the substrate surface is filled with a liquid such as water or an organic solvent, and the wavelength of the exposure light in the liquid lZn in the air (n is the refractive index of the liquid)
- n is the refractive index of the liquid
- Patent Document 1 International Publication No. 99-49504 pamphlet
- a carry-in path (loader space) for carrying a substrate into the exposure processing unit and a carry-out path (unloader space) for carrying out the substrate from the exposure processing unit. are often placed close to each other.
- liquid immersion method there is a possibility that liquid may adhere to the substrate after the exposure processing, and this liquid may be scattered during the transport of the substrate, and the liquid being transported to the exposure processing unit or the liquid before the exposure processing There is a possibility that the substrate may adhere to a transport member that transports the substrate.
- the adhered liquid collects impurities contained in a surrounding gas and causes exposure.
- the substrate before processing is contaminated.
- the substrate may be contaminated before the next exposure processing.
- the mark is left on the substrate surface, so that the exposure accuracy is likely to be reduced.
- the present invention has been made in view of the above circumstances, and can prevent liquid from adhering to a substrate before exposure processing based on the liquid immersion method or a member that transports a substrate before exposure processing. It is an object of the present invention to provide a substrate transfer device that can be used.
- Another object of the present invention is to provide an exposure apparatus that can perform exposure processing with high accuracy based on a liquid immersion method. Another object of the present invention is to provide a device manufacturing method capable of manufacturing a high-quality device.
- the present invention employs the following configuration corresponding to Figs.
- the substrate transport apparatus (H) of the present invention includes a substrate transporter (EX) that carries out an exposure process via a projection optical system (PL) and a liquid (LQ).
- the scattering control mechanism (110) is, for example, a partition member provided between the transport space of the first transport mechanism (HI) and the transport space of the second transport mechanism (H2). It has (111).
- the scattering control mechanism (110) is provided with an opening () that communicates at least a part of the transport space of the first transport mechanism (HI) and the transport space of the second transport mechanism (H2). It may have a partition member (111) formed with 112) and an opening / closing member (113) for opening and closing the opening (112).
- the scattering control mechanism (110) is configured to transport the substrate (P) before the liquid is attached.
- the first transport mechanism (HI) for transporting the second transport mechanism (H2) may also have an isolation mechanism (130) for isolating the transport path force of the second transport mechanism (H2).
- the scattering control mechanism (110) forms an air curtain between the transfer space of the first transfer mechanism (HI) and the transfer space of the second transfer mechanism (H2). There may be.
- the scattering control mechanism (110) is provided in the first transport mechanism (HI), and has a first substrate storage container (140) that stores the substrate (P) before the liquid is attached. It's a little.
- the scattering control mechanism (110) is provided in the second transport mechanism (H2), and has a second substrate storage container (141) for storing the substrate after the liquid is attached. You can.
- the second transfer mechanism and the second transfer mechanism transfer the at least one of the first transfer mechanism and the substrate transferred by the first transfer mechanism by the scattering suppression mechanism. Since the scattering of the liquid having at least one force with the substrate to be transferred is suppressed, the liquid is prevented from adhering to the first transfer mechanism or the substrate transferred by the first transfer mechanism. In other words, liquids and foreign substances are prevented from adhering to the substrate before exposure processing based on the immersion method.
- the substrate transfer device (H) of the present invention has a first storage container (150) for storing the substrate (P) to which the liquid (LQ) has adhered, and the liquid (LQ) having adhered thereto. And a second storage container (151) for storing the substrate (P).
- the exposure apparatus (EX-SYS) of the present invention provides a mask (M) with at least a part between the projection optical system (PL) and the substrate (P) filled with a liquid (LQ).
- An exposure apparatus including an exposure processing unit (EX) that projects an image of the formed pattern onto the substrate (P) and exposes the substrate (P), the apparatus including the substrate transport device (H) described above. It is characterized by.
- a device manufacturing method of the present invention is characterized by using the above-described exposure apparatus.
- the provision of the scattering control mechanism can prevent the liquid or foreign matter from adhering to the substrate before the exposure processing based on the liquid immersion method.
- liquid and foreign substances are prevented from adhering to the substrate before the exposure processing based on the liquid immersion method during the transfer of the substrate, so that the exposure processing can be performed with high accuracy. It can be carried out.
- a high-quality device can be manufactured by an exposure process based on a liquid immersion method.
- FIG. 1 is a schematic view showing an embodiment of a device manufacturing system including an exposure apparatus according to the present invention.
- FIG. 1 is a schematic view showing an embodiment of a device manufacturing system including an exposure apparatus according to the present invention.
- FIG. 2 is a view of FIG. 1 as viewed from above.
- FIG. 3 is a diagram schematically showing a configuration example of a scattering suppression mechanism.
- FIG. 4 is a schematic configuration diagram illustrating an embodiment of an exposure apparatus main body that performs an exposure process.
- FIG. 5 is a diagram showing an example of the arrangement of supply nozzles and recovery nozzles.
- FIG. 6 is a diagram schematically showing a configuration example of a liquid removal system.
- FIG. 7 is a diagram schematically showing another configuration example of the scattering suppression mechanism.
- FIG. 8A is a diagram schematically showing another configuration example of the scattering control mechanism.
- FIG. 8B is a view schematically showing another configuration example of the scattering control mechanism.
- FIG. 8C is a view schematically showing another configuration example of the scattering control mechanism.
- FIG. 9 is a diagram schematically showing another configuration example of the scattering suppression mechanism.
- FIG. 10 is a diagram showing a configuration example when a substrate cassette is used.
- FIG. 11 is a diagram showing another configuration example when a substrate cassette is used.
- FIG. 12 is a flowchart showing an example of a semiconductor device manufacturing process.
- H substrate transfer system (substrate transfer device), SYS: device manufacturing system, EX-SYS: exposure device, EX: exposure device body (exposure processing unit), CZD-SYS: coater, developer device, IF: interface Section, CONT... Control device, PST... Substrate stage (exposure processing section), LQ... Liquid, P... Substrate, ......... Mask, ......... 1st arm (1st transfer mechanism),... 2... 2nd arm (2nd transport mechanism), 100 ⁇ liquid removal system, 110 ⁇ ⁇ ⁇ scattering control mechanism, 111 ⁇ ⁇ ⁇ partition member, 112 ⁇ ⁇ ⁇ opening, 113 ⁇ opening and closing member, 121 ⁇ gas supply device, 123 ⁇ Nozzle, 130... Separation mechanism, 131 ⁇
- FIG. 1 is a diagram showing one embodiment of a device manufacturing system provided with an exposure apparatus of the present invention, and is a schematic configuration diagram viewed from a side
- FIG. 2 is a diagram showing FIG. 1 viewed from above.
- the device manufacturing system SYS includes an exposure apparatus EX—SYS and a coater ′. It has a development device CZD-SYS.
- the exposure apparatus EX—SYS is composed of an interface section IF that forms a connection with the coater / developing apparatus CZD—SYS, the space between the projection optical system PL and the substrate P filled with liquid LQ, and the projection optical system PL and liquid LQ.
- the exposure apparatus body EX that exposes the substrate P by projecting the pattern formed on the mask onto the substrate P through the interface, and the substrate that transports the substrate P between the interface IF and the exposure apparatus body EX
- the transport system H as a transport device, the liquid removal system 100 that is provided in the middle of the transport path of the transport system H and removes the liquid LQ adhering to the surface of the substrate P, and the overall operation of the exposure system EX-SYS It has a control device CONT for controlling.
- Coater / developing device CZD-SYS is a coating device C that applies a photoresist (photosensitizer) to the base material of the substrate P before the exposure process, and after the exposure process is performed by the exposure device body EX.
- a developing device (processing device) D for developing the substrate P The exposure apparatus body EX is disposed inside the first chamber apparatus CH1 in which cleanliness is controlled.
- the coating device C and the developing device D are arranged inside the second chamber device CH2 different from the first chamber device CH1. Then, the first chamber device CH1 that houses the exposure apparatus body EX and the second chamber device CH2 that houses the coating device C and the imaging device D are connected via an interface IF.
- the coating device C and the developing device D housed inside the second chamber device CH2 are collectively referred to as “coater / developing unit body CZD” as appropriate.
- the exposure apparatus body EX has an illumination optical system IL that illuminates the mask M supported on the mask stage MST with the exposure light EL, and a pattern of the mask M illuminated with the exposure light EL.
- the projection optical system includes a projection optical system PL that projects an image on the substrate P, and a substrate stage PST that supports the substrate P.
- the exposure apparatus body EX of the present embodiment is a scanning type that exposes a pattern formed on the mask M to the substrate P while synchronously moving the mask M and the substrate P in different directions (opposite directions) in the scanning direction.
- An exposure apparatus (a so-called scanning stepper).
- the direction of synchronous movement (scanning direction) of the mask M and the substrate P in the horizontal plane is the X-axis direction
- the direction orthogonal to the X-axis direction in the horizontal plane is the Y-axis direction (non-scanning direction)
- the X-axis The direction perpendicular to the Y-axis direction and coincident with the optical axis AX of the projection optical system PL is defined as the Z-axis direction.
- the “substrate” includes a semiconductor wafer coated with a resist
- the “mask” includes a reticle on which a device pattern to be reduced and projected on the substrate is formed.
- the transfer system ⁇ includes a first arm HI as a first transfer mechanism for loading (loading) the substrate ⁇ before being subjected to the exposure processing into the substrate stage PST, and a substrate stage after the exposure processing.
- a second arm H2 as a second transfer mechanism for unloading (unloading) from the PST is provided.
- Coating device C force The transported substrate P before exposure processing is transferred to the third arm H3 via the interface IF.
- the third arm H3 transfers the substrate P to the bri-alignment unit PAL.
- the blind alignment section PAL roughly adjusts the position of the substrate P with respect to the substrate stage PST.
- the substrate P aligned by the bri-alignment unit PAL is loaded on the substrate stage PST by the first arm HI.
- the second arm H2 transfers the substrate P after the exposure processing to a holding table HT provided in the middle of the transport path of the substrate P.
- the holding table HT constitutes a part of the liquid removing system 100, and temporarily holds the transferred substrate P.
- the holding table HT is disposed inside the cover member 70, and the cover member 70 is provided with openings 71 and 72 for allowing the substrate P to be conveyed to pass therethrough.
- the openings 71 and 72 are provided with shirt portions 71A and 72A, respectively, which open and close the openings 71 and 72.
- the holding table HT is rotatable while holding the substrate P.
- the substrate P turned by the rotation of the holding table HT is held by the fourth arm H4 and transported to the interface IF. .
- the substrate P transported to the interface section IF is transferred to the developing device D.
- the developing device D performs a developing process on the transferred substrate P.
- the first to fourth arms HI-H4, the pre-alignment unit PAL, and the holding table HT are also disposed inside the first chamber device CHI.
- an opening and a shirt that opens and closes the opening are provided in portions facing the interface IF of each of the first and second chamber devices CH1 and CH2. The shutter is released during the transfer operation of the board P to the interface IF.
- the first arm HI holds the substrate P before the exposure processing and loads it on the substrate stage PST.
- the liquid LQ after the immersion exposure processing may adhere to the second arm H2. Unload from the substrate stage PST while holding the substrate P with potential.
- the first arm HI for transporting the substrate P before the exposure processing and the second arm H2 for transporting the substrate P after the exposure processing to which the liquid LQ may be attached are separated. Therefore, it is possible to prevent the liquid LQ or foreign matter from adhering to the back surface of the substrate P loaded on the substrate stage PST, etc., without the liquid LQ adhering to the first arm HI. Therefore, even if the substrate holder of the substrate stage PST holds the substrate P by vacuum suction, it is possible to prevent the inconvenience of the liquid LQ from entering the vacuum system such as a vacuum pump through the suction hole of the substrate holder. it can.
- the second arm H2 for unloading the substrate from the substrate stage PST is provided for the first arm HI for loading the substrate into the substrate stage PST as a part of the exposure processing unit. Is located below. This is because the liquid adhering to the substrate after the exposure processing carried by the second arm H2 falls on at least one of the first arm HI or the substrate P before the exposure processing carried by the first arm HI, and This is to prevent the liquid from adhering to the transported substrate before the exposure processing.
- the transfer system H of the present example includes at least one of the second arm H2 and the substrate transferred by the second arm H2 with respect to at least one of the first arm HI and the substrate P transferred by the first arm HI.
- a scatter control mechanism 110 for suppressing scatter of liquid from the water is provided.
- FIG. 3 schematically shows a configuration example of the scattering control mechanism 110.
- the scattering control mechanism 110 includes a partition member 111 provided between the transfer space of the first arm HI and the transfer space of the second arm H2, and an opening formed in the partition member 111.
- An opening / closing member 113 for opening and closing the mouth 112 and a driving device 114 for driving the opening / closing member 113 are included.
- the partition member 111 is formed of a plate-like member, has a wall provided between the transfer space of the first arm HI and the transfer space of the second arm H2, and direct gas flow between the two spaces. It blocks the traffic.
- the partition member 111 is disposed so as not to hinder the movement of the arms HI and H2, while the partition member 111 has a transfer space for the first arm HI and a transfer space for the second arm H2.
- An opening 112 that communicates a part of is formed.
- the opening 112 is provided to prevent interference between the arms H1 and H2 and the partition member 111, for example, when transferring a substrate.
- the position, the size, the number, and the like to be formed are appropriately determined based on each operation of the first arm HI and the second arm H2.
- An opening / closing member 113 is slidably provided in the opening 112 of the partition member 111, and the opening / closing member 113 is driven by a driving device 114.
- a sliding property improving agent is used for a sliding portion such as the opening / closing member 113, a substance in which the generation of volatile substances (organic substances such as carbide) is suppressed, for example, a fluorine-based grease or the like is used.
- the liquid may be scattered from the substrate after the exposure processing during the transport by the second arm H2 due to the airflow in the chamber CH1 (see Fig. 2).
- the suppression mechanism 110 prevents the liquid from adhering to the first arm HI or the substrate being conveyed by the first arm HI. In other words, even if the substrate force liquid on the second arm H2 scatters, the movement of the liquid in the air is blocked by the partition member 111, and the liquid is conveyed by the first arm H1 or the first arm H1. The adhesion of the liquid to the substrate inside is prevented.
- the opening / closing member 113 of the opening 112 is appropriately opened, and the movement of the arms Hl and H2 is performed through the opening 112.
- interference between the arms Hl and H2 and the partition member 111 is avoided.
- FIG. 4 is a schematic configuration diagram of the exposure apparatus main body EX.
- the illumination optical system IL illuminates the mask M supported by the mask stage MST with the exposure light EL, and is used for uniformizing the illuminance of the exposure light source and the luminous flux emitted from the exposure light source. It has an integrator, a condenser lens that collects the exposure light EL from the optical integrator, a relay lens system, and a variable field stop that sets the illumination area on the mask M by the exposure light EL in a slit shape. A predetermined illumination area on the mask M is illuminated by the illumination optical system IL with exposure light EL having a uniform illuminance distribution.
- Illumination optical system IL power Exposure light EL emitted is, for example, a mercury lamp power emitted ultraviolet rays (g-line, h-line, i-line) and far ultraviolet light (wavelength 248 nm) such as KrF excimer laser light (wavelength 248 nm). Vacuum ultraviolet light such as DUV light, Ar F excimer laser light (wavelength 193 nm) and F laser light (wavelength 157 nm)
- VUV light VUV light
- ArF excimer laser light ArF excimer laser light
- the mask stage MST supports the mask M, and is an optical axis of the projection optical system PL. It is two-dimensionally movable in a plane perpendicular to AX, that is, in an XY plane, and is capable of minute rotation in the ⁇ Z direction.
- the mask stage MST is driven by a mask stage driving device MSTD such as a linear motor.
- the mask stage drive MSTD is controlled by the controller CONT.
- a moving mirror 56 is provided on the mask stage MST, and a laser interferometer 57 is provided at a position facing the moving mirror 56.
- the two-dimensional position and rotation angle of the mask stage MST holding the mask M are measured in real time by a laser interferometer, and the measurement results are output to the controller CONT.
- the control device CONT drives the mask stage driving device MSTD based on the measurement result of the laser interferometer, thereby positioning the mask M supported by the mask stage MST.
- the projection optical system PL is for projecting and exposing the pattern of the mask M onto the substrate P at a predetermined projection magnification of 13, and is composed of a plurality of optical elements (lenses and mirrors).
- the lens barrel is housed in the PK.
- the projection optical system PL is a reduction system whose projection magnification j8 is, for example, 1Z4 or 1Z5. Note that the projection optical system PL may be either a unity magnification system or an enlargement system.
- an optical element (lens) 2 is exposed from the lens barrel PK on the distal end side (substrate P side) of the projection optical system PL of the present embodiment. This optical element 2 is provided detachably (exchangeable) with respect to the barrel PK.
- the optical element 2 is formed of fluorite. Since fluorite has a high affinity for pure water, the liquid LQ can be brought into close contact with almost the entire tip surface (liquid contact surface) 2a of the optical element 2. That is, in the present embodiment, since the affinity for the liquid contact surface 2a of the optical element 2 is high and the liquid (water) LQ is supplied, the liquid contact surface 2a of the optical element 2 is supplied. And liquid LQ.
- the optical element 2 may be quartz having a high affinity for water. Further, the liquid contact surface 2a of the optical element 2 may be subjected to a hydrophilic (lyophilic) treatment so as to further enhance the affinity with the liquid LQ.
- the substrate stage PST supports the substrate P.
- the Z stage 51 holds the substrate P via a substrate holder
- the XY stage 52 supports the Z stage 51, and supports the XY stage 52.
- the substrate stage PST is driven by a substrate stage driving device PSTD such as a linear motor.
- Substrate stage drive PSTD Controlled by CONT.
- the Z stage 51 controls the focus position and the tilt angle of the substrate P to adjust the surface of the substrate P to the image plane of the projection optical system PL by the autofocus method and the auto-leveling method
- the XY stage 52 Performs positioning of P in the X and Y axis directions. It goes without saying that the Z stage and the XY stage may be provided integrally.
- a movable mirror 54 is provided on the substrate stage PST (Z stage 51).
- a laser interferometer 55 is provided at a position facing the movable mirror 54.
- the two-dimensional position and rotation angle of the substrate P on the substrate stage PST are measured in real time by the laser interferometer 55, and the measurement result is output to the control device CONT.
- the controller CONT drives the substrate stage driving device PSTD based on the measurement result of the laser interferometer 55 to position the substrate P supported by the substrate stage PST.
- a liquid immersion method is applied in order to substantially shorten the exposure wavelength to improve the resolution and substantially widen the focal depth. Therefore, at least while the image of the pattern of the mask M is being transferred onto the substrate P, the predetermined liquid LQ is filled between the surface of the substrate P and the tip surface 2a of the optical element 2 of the projection optical system PL. It is. As described above, the optical element 2 is exposed at the distal end side of the projection optical system PL, and the liquid LQ is configured to contact only the optical element 2. This prevents corrosion of the lens barrel PK made of metal and the like. In the present embodiment, pure water is used for the liquid LQ.
- Pure water can be used not only for ArF excimer laser light, but also for exposure light EL such as ultraviolet emission lines (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm). Even when light (DUV light) is used, the exposure light EL can be transmitted.
- exposure light EL such as ultraviolet emission lines (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm). Even when light (DUV light) is used, the exposure light EL can be transmitted.
- the exposure apparatus main body EX includes a liquid supply mechanism 10 for supplying a liquid LQ between the tip surface 2a of the optical element 2 of the projection optical system PL and the substrate P, and a liquid for collecting the liquid LQ on the substrate P. And a recovery mechanism 20.
- the liquid supply mechanism 10 supplies a predetermined liquid LQ to form the liquid immersion area AR2 on the substrate P.
- the liquid supply device 10 is capable of delivering the liquid LQ.
- a supply nozzle 13 connected to the liquid supply device 11 via a supply pipe 12 and having a supply port for supplying the liquid LQ sent from the liquid supply device 11 onto the substrate P.
- the supply nozzle 13 is arranged close to the surface of the substrate P.
- the liquid supply device 11 includes a tank for storing the liquid LQ, a pressure pump, and the like, and supplies the liquid LQ onto the substrate P via the supply pipe 12 and the supply nozzle 13.
- the liquid supply operation of the liquid supply device 11 is controlled by the control device CONT, and the control device CONT can control the amount of liquid supply to the substrate P by the liquid supply device 11 per unit time.
- the liquid supply device 11 has a liquid LQ temperature adjustment mechanism, and supplies the liquid LQ having substantially the same temperature (for example, 23 ° C.) as the temperature in the chamber in which the device is accommodated, onto the substrate P. It has become.
- the liquid recovery mechanism 20 recovers the liquid LQ on the substrate P, and includes a recovery nozzle 23 disposed close to the surface of the substrate P without coming into contact with the surface of the substrate P, and a recovery pipe 22 connected to the recovery nozzle 23. And a liquid recovery device 21 connected through the.
- the liquid recovery device 21 includes, for example, a vacuum system (suction device) such as a vacuum pump and a tank for storing the recovered liquid LQ, and recovers the liquid LQ on the substrate P via a recovery nozzle 23 and a recovery pipe 22. .
- the liquid recovery operation of the liquid recovery device 21 is controlled by the control device CONT, and the control device CONT can control the amount of liquid recovered by the liquid recovery device 21 per unit time.
- the substrate P moves in the + X direction (or -X direction) at the speed ⁇ ⁇ ⁇ ( ⁇ is the projection magnification) through the XY stage 52 in synchronization with the movement in the direction (or + X direction) at the speed V. I do.
- the next shot area is moved to the scanning start position by the stepping of the substrate, and thereafter, the exposure processing for each shot area is sequentially performed by the step-and-scan method.
- the liquid LQ is set to flow along the moving direction of the substrate.
- FIG. 5 shows a projection area AR1 of the projection optical system PL, a supply nozzle 13 (13A-13C) for supplying the liquid LQ in the X-axis direction, and a collection nozzle 23 (23A, 23B) for collecting the liquid LQ.
- FIG. 6 is a diagram showing a positional relationship with the stakeholder.
- the shape of the projection area AR1 of the projection optical system PL is in the Y-axis direction.
- the three supply nozzles 13A-13C are arranged on the + X side so as to sandwich the projection area AR1 in the X-axis direction, and the two collection nozzles 23A on the X direction. , 23B are located.
- the supply nozzles 13A to 13C are connected to the liquid supply device 11 via the supply pipe 12, and the recovery nozzles 23A and 23B are connected to the liquid recovery device 21 via the recovery pipe 22.
- the supply nozzles 15A to 15C and the recovery nozzles 25A and 25B are arranged in a positional relationship in which the supply nozzles 13A to 13C and the recovery nozzles 23A and 23B are rotated by approximately 180 °.
- the supply nozzles 13A-13C and the collection nozzles 25A, 25B are arranged alternately in the Y-axis direction.
- the supply nozzles 15A-15C and the collection nozzles 23A, 23B are arranged alternately in the Y-axis direction, and the supply nozzles 15A-15C. Is connected to the liquid supply device 11 via the supply pipe 14, and the recovery nozzles 25A and 25B are connected to the liquid recovery device 21 via the recovery pipe 24.
- the supply pipe 12 When scanning exposure is performed by moving the substrate P in the scanning direction (the X direction) indicated by the arrow Xa, the supply pipe 12, the supply nozzles 13A to 13C, the collection pipe 22, and the collection nozzles 23A and 23B are connected.
- the liquid LQ is supplied and collected by the liquid supply device 11 and the liquid recovery device 21.
- the liquid LQ is supplied onto the substrate P from the liquid supply device 11 via the supply pipe 12 and the supply nozzle 13 (13A-13C), and the collection nozzle 23
- the liquid LQ is recovered by the liquid recovery device 21 via the liquid collecting device 21 (23A, 23B) and the recovery pipe 22, and the liquid LQ flows in the X direction so as to fill the space between the projection optical system PL and the substrate P.
- the supply pipe 14 when scanning exposure is performed by moving the substrate P in the scanning direction (+ X direction) indicated by the arrow Xb, the supply pipe 14, the supply nozzles 15A to 15C, the collection pipe 24, and the collection nozzles 25A and 25B are connected.
- the liquid LQ is supplied and collected by the liquid supply device 11 and the liquid recovery device 21. That is, when the substrate P moves in the + X direction, the liquid LQ is supplied from the liquid supply device 11 onto the substrate P via the supply pipe 14 and the supply nozzle 15 (15A-15C), and the collection nozzle 25 (25A, 25B) and the collection pipe 24, the liquid LQ is collected by the liquid collection device 21, and the liquid LQ flows in the + X direction so as to fill the space between the projection optical system PL and the substrate P.
- the control device CONT uses the liquid supply device 11 and the liquid recovery device 21 to flow the liquid LQ in the same direction as the movement direction of the substrate P along the movement direction of the substrate P.
- the liquid is supplied from the liquid supply device 11 through the supply nozzle 13. Since the liquid LQ flows as it is drawn between the projection optical system PL and the substrate P as the substrate P moves in the X direction, the liquid LQ is projected even if the supply energy of the liquid supply device 11 is small. It can be easily supplied between the optical system PL and the substrate P. By switching the direction in which the liquid LQ flows according to the scanning direction, the liquid flows between the projection optical system PL and the substrate P regardless of whether the substrate P is scanned in the + X direction or the X direction. LQ can be satisfied, and high resolution, wide, and depth of focus can be obtained.
- FIG. 6 is a diagram showing the liquid removal system 100.
- the second arm H2 holding the substrate P after the immersion exposure enters the inside of the cover member 70 accommodating the holding table HT through the opening 71.
- the controller CONT drives the shutter 71A to open the opening 71.
- the opening 72 is closed by the shirt part 72A.
- a spray nozzle (not shown) blows gas on the back surface of the substrate P to remove the liquid adhering to the back surface of the substrate P.
- the second arm H2 transfers the substrate P to the holding table HT.
- the holding table HT holds the transferred substrate P by vacuum suction.
- a spray nozzle 103 constituting a part of the liquid removal system 100 is arranged, and a gas supply system 104 is connected to the spray nozzle 103 via a flow path 105.
- the flow path 105 is provided with a filter for removing foreign substances (dust and oil mist) in the gas blown against the substrate P. Then, when the gas supply system 104 is driven, a predetermined gas is blown from the spray nozzle 103 to the surface of the substrate P via the flow path 105 and adheres to the surface of the substrate P. It is blown off by the blown gas and removed.
- a liquid recovery unit 80 is connected to the cover member 70 via a recovery pipe 81.
- the recovery pipe 81 is provided with a valve 82 for opening and closing the flow path of the recovery pipe 81.
- the liquid LQ blown off from the substrate P is collected by a liquid collecting unit 80 connected to the cover member 70.
- the liquid recovery unit 80 recovers the liquid LQ blown from the substrate P by sucking the gas inside the cover member 70 together with the scattered liquid LQ.
- the liquid recovery unit 80 continuously performs the bowing I operation of the gas inside the cover member 70 and the scattered liquid LQ.
- the liquid LQ does not stay inside the cover member 70 such as the inner wall and the bottom of the cover member 70, and
- the humidity inside the bar member 70 does not fluctuate greatly. Further, even when the shutter portions 71A and 72A are opened, the moist gas in the cover member 70 does not flow out of the cover member 70.
- the exposure apparatus body EX performs the exposure processing based on the liquid immersion method.
- the scattering control mechanism 110 prevents the liquid from adhering to the substrate before the exposure processing and the first arm HI for transporting the substrate.
- a decrease in exposure accuracy due to the liquid adhering to the substrate before the exposure processing is prevented, and a malfunction and an environmental change due to the liquid adhering to the first arm HI are prevented. Therefore, the device manufacturing system SYS can perform exposure processing with high accuracy.
- FIGS. 7 to 9 show other examples of the scattering control mechanism 110.
- the anti-scattering mechanism 110 of FIG. 7 includes a gas supply device 121 and a nozzle 123 connected to the gas supply device 121 via a pipe 122 to blow out gas.
- the nozzles 123 are arranged between the first arm HI and the second arm H2, and a plurality of nozzles 123 are arranged in the movement direction of the arms Hl and H2. Further, the nozzle 123 is arranged so as to blow gas downward.
- various types of nozzles can be applied, such as a nozzle having a slit-shaped outlet or a nozzle having a plurality of holes.
- the pipe 122 is provided with a filter (not shown) for removing impurities (particles or oil mist) in the gas. In this example, dry air is used as the gas blown out from the nozzle 123. In addition, other gases such as nitrogen gas and helium gas may be used.
- the gas supply device 121 is driven, and the nozzle 123 blows out gas, so that an air curtain is provided between the transfer space of the first arm HI and the transfer space of the second arm H2.
- a wall formed by the gas flow is formed between the transfer space of the first arm HI and the transfer space of the second arm H2.
- the scattering suppression mechanism 110 in Fig. 7 suppresses the liquid from being scattered by the air curtain, and therefore has a simpler configuration than the configuration in which the scattering is suppressed using the plate-like member shown in Fig. 3 above.
- the formation of the air curtain may be performed only when there is a high possibility that the liquid is scattered.
- the air curtain may be formed only while the substrate after the exposure processing is being conveyed by the second arm H2.
- the scattering control mechanism 110 shown in FIGS. 8A to 8C includes an isolation mechanism 130 that isolates the first arm HI from the transport path of the second arm H2.
- the isolation mechanism 130 includes a storage container 131 that stores the second arm H2, and an opening / closing mechanism 132 that is provided in the storage container 131 and that moves the second arm H2 in and out.
- the first arm HI carries the substrate before the exposure processing (referred to as the first substrate) into the substrate stage PST. While the first arm HI carries the first substrate into the substrate stage PST, in the brialignment unit PAL, the next substrate before exposure processing (referred to as the second substrate) is roughly positioned with respect to the substrate stage PST. Perform alignment. Then, the second substrate positioned by the briar alignment unit PAL is loaded on the substrate stage PST by the first arm HI. When the second substrate is loaded by the first arm HI, the exposed first substrate is unloaded from the substrate stage PST by the second arm H2.
- the second arm H2 and the second arm H2 there is a possibility that the scattered liquid may adhere to at least one of the second substrate carried by the first arm HI and the first arm H1.
- the first arm HI and the second arm H2 When they pass each other, the first arm HI is retracted into the container 131. After the second arm H2 moves away from the container 131, that is, the first arm HI, the first arm HI exits the container 131 again and loads the second substrate onto the substrate stage PST.
- the substrate after the exposure processing is transported by the second arm H2.
- the first arm HI is isolated in the container 131. Therefore, the liquid scattered by the second arm H2 and the substrate after the exposure processing is prevented from adhering to at least one of the first arm HI and the substrate before the exposure processing.
- the method of isolating the transfer path force of the second arm H2 from the first arm HI is not limited to the method described above.
- the first arm HI may be separated by a member of another form without being limited to the box-shaped container.
- the first arm HI may be retracted with respect to the second arm H2 while the substrate is being transported by the second arm H2, and the second arm H2 may be kept at a position where the liquid does not scatter.
- the scattering control mechanism 110 shown in FIG. 9 is provided on the first arm HI and stores a first substrate storing container 140 for storing a substrate, and a second substrate H is provided on the second arm H2 and stores a substrate. And The first substrate container 140 moves with the first arm HI, and the second substrate container 141 moves with the second arm H2.
- opening / closing mechanisms 142 and 143 for loading and unloading substrates are provided in the storage containers 140 and 141, respectively.
- the opening / closing mechanisms 142 and 143 are disposed so as to open and close openings provided in the storage containers 140 and 141, and are driven by a driving device (not shown).
- the substrate before the exposure processing is transferred by the first arm HI
- the substrate is stored in the first substrate storage container 140.
- the first substrate storage container 140 moves together with the first arm HI.
- the transfer of the substrate is performed via an opening / closing mechanism 142 provided in the first substrate storage container 140.
- the substrate after the exposure processing is transported by the second arm H2
- the substrate is stored in the second substrate storage container 141.
- the second substrate container 141 moves together with the second arm H2 that transfers the substrate.
- the transfer of the substrate is performed via an opening / closing mechanism 143 provided in the second substrate storage container 141.
- the second substrate container 141 prevents the liquid from scattering around the substrate after the exposure processing. Therefore, adhesion of the liquid to the substrate before the exposure processing is reliably prevented. Further, in this example, since the storage containers 140 and 141 for suppressing the scattering of the liquid move together with the arms Hl and H2, there is little waste in the substrate transfer operation.
- a substrate storage container that stores a substrate is provided in both the first arm HI and the second arm H2, but the substrate storage container is provided only in one of the arms. It may be.
- the substrate container is formed in, for example, a box shape so as to prevent intrusion and scattering of the liquid, but this form can also be arbitrarily modified.
- an air curtain may be formed in the opening of the substrate container. In the configuration in which the air curtain is formed in the opening, the sliding mechanism can be omitted, and there is an advantage in terms of cleanliness control.
- FIG. 10 shows a configuration example in which a substrate is transferred to and from the exposure apparatus EX-SYS via the substrate cassettes 150 and 151.
- each of the substrate cassettes 150 and 151 is configured to be capable of accommodating a plurality of substrates, and a plurality of substrates are collectively stored between a plurality of exposure processing steps or during a test exposure processing. It is used when transporting to a destination.
- installation sections 152 and 153 for installing the substrate cassettes 150 and 151 are provided.
- the installation section 152 is provided with a substrate cassette 150 for accommodating the substrate before the exposure processing
- the installation section 153 is provided with a substrate cassette 151 for accommodating the substrate after the exposure processing, that is, the substrate to which the liquid is attached. Is installed. That is, in this example, the substrate cassette is used separately before and after the exposure processing! / Puru.
- the substrates P before the exposure processing are taken out one by one from the substrate cassette 150 installed in the installation section 152.
- the first arm HI transfers (loads) the substrate P to the substrate stage PST.
- the substrate P after the immersion exposure is carried out from the substrate stage PST by the second arm H2.
- the second arm H2 stores the substrate P in the substrate cassette 151 installed in the installation section 153 (unload).
- Substrate cassette When a predetermined number of substrates are stored in the substrate 151, the substrate cassette 151 is sent to, for example, an apparatus for development processing.
- the substrate after the immersion exposure is returned to the substrate cassette 151 different from the substrate cassette 150 accommodating the substrate before the exposure processing.
- scattering of the liquid adhering to the substrate after the immersion exposure to the substrate before the exposure processing is prevented.
- the exposure apparatus EX-SYS of this example When the exposure apparatus EX-SYS of this example is provided with the liquid removal system for removing the liquid attached to the substrate as described above, the liquid on the substrate after the immersion exposure is used. After the removal, the substrate may be sent to the substrate cassette 151.
- the substrate from which the liquid has been removed by the liquid removal system is returned to the substrate cassette 150 containing the substrate before the exposure processing, and the substrate to which the liquid has adhered is not passed through the liquid removal system. You may return to the other substrate cassette 151!
- FIG. 11 shows a configuration example in which the exposure units EX-SYS shown in FIG. 2 are provided with the installation units 162 and 163 of the substrate cassettes 160 and 161.
- the installation section 162 is provided with a substrate cassette 160 for accommodating a substrate P to be fed by a load system (the first arm Hl, the third arm H3, etc.), and the installation section 163 is provided with an unload system (the second arm H2, A substrate cassette 161 for storing the substrates P sent from the fourth arm H4) is installed.
- the substrate cassettes 160 and 161 are used when a problem such as deterioration of the imaging performance occurs. Specifically, when a failure occurs, the substrate P held by the load system (the first arm Hl, the third arm H3, etc.) is collected in the substrate cassette 160, and the unload system (the second arm H2, the fourth arm H4, etc.) The substrate P held by the parentheses is collected in the substrate cassette 161. In the event of a failure, the substrate P held by the load system is not exposed before the exposure process, so the liquid is likely to adhere to the substrate P. However, the substrate P held by the unload system is after the exposure process. Therefore, there is a high possibility that the liquid is attached.
- the load system the first arm Hl, the third arm H3, etc.
- the unload system the second arm H2, the fourth arm H4, etc.
- the unloading system collects the substrates before exposure processing collected from the loading system. Spattering of the liquid from the substrate is prevented. As a result, the substrates recovered from the load system can be reused.
- the liquid removal system After removing the liquid adhering to the substrate with a system, the liquid may be collected in the substrate cassette 161.
- the liquid is attached to the substrate surface in order to perform the exposure processing quickly.
- the substrate may be collected in the substrate cassette 161 without passing through the liquid removing system.
- the detection mechanism when a detection mechanism for detecting the presence / absence of the liquid adhered on the substrate surface is provided instead of the liquid removal system, the detection mechanism may be used based on the detection result of the detection mechanism.
- the substrate cassette 160 for collecting the substrates may be used.
- the liquid used in the exposure processing is the liquid used in the exposure processing
- Pure water is used as LQ. Pure water can be easily obtained in large quantities at semiconductor manufacturing plants and the like, and has the advantage that it does not adversely affect the photoresist on the substrate P, optical elements (lenses), and the like.
- pure water has no adverse effect on the environment and has an extremely low impurity content. Therefore, it is expected that the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL will be cleaned. it can.
- the refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is said to be approximately 1.44, and ArF excimer laser light (wavelength 193 nm) is used as the light source of the exposure light EL. If used, the wavelength is shortened to lZn, that is, about 134 nm on the substrate P, and high resolution is obtained. Furthermore, since the depth of focus is expanded to about n times, that is, about 1.44 times as compared to that in the air, if it is sufficient to secure the same depth of focus as that used in the air, the projection optical system PL Can further increase the numerical aperture, and in this regard, the resolution is also improved.
- the lens 2 is attached to the tip of the projection optical system PL.
- the optical characteristics of the projection optical system PL for example, aberration ( An optical plate used for adjusting spherical aberration, coma, etc.) may be used. Alternatively, it may be a parallel flat plate that can transmit the exposure light EL.
- the space between the projection optical system PL and the surface of the substrate P is filled with the liquid LQ.
- the liquid LQ is filled in a state where a cover glass having a parallel flat plate force is attached to the surface of the substrate P may be used.
- F laser light When F laser light is used as exposure light, F laser light can be transmitted as liquid.
- a suitable fluorine-based liquid for example, a fluorine-based oil or perfluoropolyether (PFPE) may be used.
- PFPE perfluoropolyether
- the substrate P in each of the above embodiments is used not only for a semiconductor wafer for manufacturing a semiconductor device, but also for a glass substrate for a display device, a ceramic wafer for a thin-film magnetic head, or an exposure apparatus.
- An original mask or reticle synthetic quartz, silicon wafer is applied.
- a force that employs an exposure apparatus that locally fills the space between the projection optical system PL and the substrate P with a liquid is disclosed in Japanese Patent Application Laid-Open No. 6-124873.
- the exposure apparatus (exposure apparatus main body) EX is a step-and-scan type scanning exposure apparatus (scanning and scanning) that scans and exposes the pattern of the mask M by synchronously moving the mask M and the substrate P.
- the present invention can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the mask M and the substrate P are stationary and the substrate P is sequentially moved in steps.
- the present invention can be applied to an exposure apparatus of a step 'and' stitch method in which at least two patterns are partially overlapped and transferred on the substrate P.
- the type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element for exposing a semiconductor element pattern onto a substrate P, but may be an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin-film magnetic head, It can be widely applied to an image pickup device (CCD), an exposure apparatus for manufacturing a reticle or a mask, and the like.
- CCD image pickup device
- a linear motor (USP5,623,853 or
- each The stages PST and MST may be of the type that moves along the guides or the guideless type that does not have a guide.
- each stage PST, MST is such that a magnet cut in which magnets are arranged two-dimensionally and an armature unit in which coils are arranged two-dimensionally face each other, and each stage PST, MST May be used.
- one of the magnet unit and the armature unit should be connected to the stages PST and MST, and the other of the magnet unit and the armature unit should be provided on the moving surface side of the stages PST and MST!
- a reaction force generated by the movement of the substrate stage PST is not transmitted to the projection optical system PL by using a frame member. May be mechanically released to the floor (ground).
- a frame member is used to prevent the reaction force generated by the movement of the mask stage MST from being transmitted to the projection optical system PL. May be mechanically released to the floor (ground).
- the exposure apparatus EX of the embodiment of the present application is capable of controlling various subsystems including the respective components listed in the claims of the present application to predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling to keep. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electrical For, adjustments are made to achieve electrical accuracy.
- Various subsystems The process of assembling into the exposure apparatus includes mechanical connection, electrical circuit wiring connection, and pneumatic circuit piping connection between the various subsystems. Needless to say, there is an assembling process for each subsystem before the assembling process into the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are secured. It is desirable to manufacture the exposure apparatus in a clean room in which the temperature, cleanliness, etc. are controlled.
- a micro device such as a semiconductor device includes a step 201 for designing the function and performance of the micro device, a step 202 for manufacturing a mask (reticle) based on the design step, Step 203 of manufacturing a substrate as a base material, as described above. It is manufactured through an exposure processing step 204 of exposing a mask pattern onto a substrate by the exposure apparatus EX of the embodiment, a device assembling step (including a dicing step, a bonding step, and a package step) 205, an inspection step 206, and the like.
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims
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JP2005514601A JPWO2005036622A1 (ja) | 2003-10-08 | 2004-10-07 | 基板搬送装置、露光装置、並びにデバイス製造方法 |
US11/398,598 US7515249B2 (en) | 2003-10-08 | 2006-04-06 | Substrate carrying apparatus, exposure apparatus, and device manufacturing method |
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JP2003-349551 | 2003-10-08 | ||
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JPWO2005036622A1 (ja) | 2007-11-22 |
JP2005136364A (ja) | 2005-05-26 |
US7515249B2 (en) | 2009-04-07 |
KR20060120658A (ko) | 2006-11-27 |
US20060250602A1 (en) | 2006-11-09 |
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