WO2002027803A1 - Capteur de pression et son procede de fabrication - Google Patents
Capteur de pression et son procede de fabrication Download PDFInfo
- Publication number
- WO2002027803A1 WO2002027803A1 PCT/JP2001/008646 JP0108646W WO0227803A1 WO 2002027803 A1 WO2002027803 A1 WO 2002027803A1 JP 0108646 W JP0108646 W JP 0108646W WO 0227803 A1 WO0227803 A1 WO 0227803A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pressure sensor
- phase
- manufacturing
- aluminum oxide
- aluminum
- Prior art date
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0075—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a ceramic diaphragm, e.g. alumina, fused quartz, glass
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
Definitions
- the present invention relates to a pressure sensor in which a plate member made of high-phase alumina such as sapphire is joined to a pressure sensor chip formed of ⁇ -phase aluminum oxide (alumina) such as sapphire, and a method of manufacturing the pressure sensor.
- a plate member made of high-phase alumina such as sapphire
- a pressure sensor chip formed of ⁇ -phase aluminum oxide (alumina) such as sapphire
- This pressure sensor chip has a housing composed of a base having a predetermined space and a diaphragm disposed in the space of the base, and has a fixed electrode disposed on the base, a movable electrode fixed to the diaphragm, It has.
- the diaphragm is deformed under pressure, the distance between the movable electrode and the fixed electrode changes, and the capacitance between them changes. Based on this change in capacitance, the pressure received by the diaphragm can be measured.
- a pressure sensor chip As such a pressure sensor chip, one using sapphire for a base and a diaphragm constituting a housing has been proposed.
- Sapphire or corundum (a single crystal of ct phase aluminum oxide), is thermally very stable, hardly soluble in acids and alkalis, and can be used in a wide range of materials such as refractories, insulators, and abrasives. is there.
- the pressure sensor chip can measure the pressure by directly receiving the fluid on the diaphragm even if the measurement target is a corrosive fluid. Becomes possible.
- the pressure sensor chip is fixed to a pedestal as shown in FIG. 10 and used as a pressure sensor.
- the pressure sensor chip 1001 is placed in a recess 1003 formed in the center of a pedestal 1002 made of, for example, glass, with the diaphragm portion facing upward in the drawing. Is placed.
- recess 1 A vent hole 106 communicating with the pedestal 1002 bottom surface is formed on the bottom surface of the 003.
- the chip 1001 is fixed to the recess 1003 by pressing the peripheral portion of the upper surface by the cover plate 1007 having an opening at the center.
- the cover plate 1007 is fixed to the pedestal 1002 by being joined to the upper surface of the pedestal 1002 with glass once melted. At the contact point between the cover plate 1007 and the chip 1001, the fluid to be measured in contact with the upper surface of the chip 1001 enters the recess 1003 around the chip 1001. They are connected in a hermetically sealed state so that they do not.
- the cover plate 1007 has the same shape as the chip 1001 in the state of deformation due to temperature. It is made of sapphire made of the same material as that of 001.
- the contact surface with the chip 1001 is bonded by direct bonding.
- the joining surfaces of the sapphire are mirror-polished and brought into contact, and the two sapphire members to be joined are heated with a pressure applied between them, without using an adhesive or the like. A strong joint has been obtained.
- the present invention has been made in order to solve the above-mentioned problems, and a pressure sensor in which a housing or the like is made of ⁇ -phase aluminum oxide such as sapphire without deteriorating the characteristics of the material. It is intended to be able to be formed at low cost.
- the pressure sensor according to one embodiment of the present invention includes a base made of ⁇ -phase aluminum oxide, a diaphragm made of ⁇ -phase aluminum oxide disposed on the main surface of the base, and a diaphragm made of a concave part formed in the base.
- a pressure sensor chip having a covered capacity chamber, a fixed electrode disposed at the bottom of the capacity chamber, a movable electrode fixed to the diaphragm facing the fixed electrode inside the capacity chamber, and an ⁇ -phase A plate member made of ⁇ -phase aluminum oxide connected via an intermediate layer made of aluminum oxide, and the intermediate layer contains a solution containing a solution containing a compound containing aluminum and oxygen. After being heated, it becomes an intermediate state made of aluminum oxide other than the ct phase or amorphous aluminum oxide. Aluminum oxide state between bodies by phase transition Ru der those with c-phase.
- the joint between the pressure sensor chip and the plate member is substantially the same as the plate member, for example, substantially ⁇ -phase aluminum oxide such as sapphire.
- a method of manufacturing a pressure sensor comprising the steps of: forming a base made of single-phase aluminum oxide; a diaphragm made of single-phase aluminum oxide disposed on the main surface of the base; Pressure sensor chip comprising: a capacity chamber composed of a concave portion covered with a diaphragm; a fixed electrode disposed at the bottom of the capacity chamber; and a movable electrode fixed to the diaphragm in the capacity chamber so as to face the fixed electrode.
- a solution layer made of a solution in which a compound containing aluminum and oxygen is dissolved is formed on the surface of the plate member. Is heated to form a state in which an intermediate layer made of aluminum oxide other than the ⁇ -phase or amorphous aluminum oxide is formed on the surface of the plate member.
- an electric field is applied, and the intermediate layer is irradiated with ultraviolet rays and heated to cause a phase transition of aluminum oxide other than the ⁇ -phase or amorphous aluminum oxide constituting the intermediate layer.
- the joining portion between the pressure sensor chip and the plate member is substantially in the state of ⁇ -phase aluminum oxide such as sapphire.
- the compound containing aluminum and oxygen is aluminum hydroxide
- the solution layer is an aqueous solution
- the compound containing aluminum and oxygen is, for example, boehmite.
- the compound containing aluminum and oxygen is an aluminum-metal organic metal compound, and may be an organic acid salt of aluminum such as A 1 (CHaCOO).
- the aluminum organometallic compound may be an aluminum alkoxide or an aluminum metal carbonyl.
- the wavelength of the ultraviolet light may be 200 nm or less.
- a pressure sensor chip may be formed by fixing a buffer member made of ⁇ -phase aluminum oxide on the periphery of the diaphragm, and the plate member may be in contact with the buffer member.
- the ⁇ phase aluminum oxide is sapphire
- the aluminum oxide other than the ⁇ phase is ⁇ phase, ⁇ phase, t phase, ⁇ phase, ⁇ phase, ⁇ phase, Either ⁇ phase or ⁇ phase or a mixture.
- FIG. 1 is a configuration diagram showing a state where a cover plate 130 is joined to a chip 110 of a pressure sensor according to an embodiment of the present invention.
- FIG. 2 is a configuration diagram showing the configuration of the chip 110 of the pressure sensor in which the buffer member 120 is formed.
- FIG. 3 is a plan view showing the configuration of the buffer member 120.
- FIG. 4 is a plan view showing a configuration of a cover plate 130 made of sapphire to which a metal plate 140 is joined.
- FIG. 5 is a process chart illustrating a method for manufacturing a pressure sensor according to an example of the present invention.
- FIG. 6 is a process diagram illustrating a method for manufacturing a pressure sensor according to an embodiment of the present invention.
- FIG. 7 is a configuration diagram illustrating a partial configuration of the pressure sensor according to the embodiment of the present invention.
- FIG. 8 is a configuration diagram illustrating a partial configuration of the pressure sensor according to the embodiment of the present invention.
- FIG. 9 is an explanatory diagram showing the state of] 3-alumina.
- FIG. 10 is a configuration diagram showing a partial configuration of the pressure sensor. Detailed description of the embodiment
- FIG. 1 is a configuration diagram illustrating a configuration of a pressure sensor chip according to an embodiment of the present invention.
- a chip 110 of the pressure sensor to which the buffer member 120 is fixed is made of a sapphire which is a single crystal of aluminum oxide (alumina) of ⁇ phase.
- the cover plate (a plate member made of ⁇ -phase aluminum oxide) 130 was joined.
- the pressure sensor chip 110 joining the cover plate 130 is formed of a base 101 made of sapphire and a diaphragm 102 made of sapphire, and is formed by a recess formed in the center of the base 101.
- the capacity chamber 103 is formed, and the movable electrode 104 is formed on the diaphragm 102 side of the capacity chamber 103, on the base 101 side of the capacity chamber 103, that is, on the bottom of the concave portion of the base 101.
- a fixed electrode 105 is formed. Although not shown, an electrode pad connected to the movable electrode 104 and an electrode pad connected to the fixed electrode 105 are formed on the back surface of the base 101.
- a plurality of the chips 110 are formed on a disk-shaped sapphire wafer having a diameter of 4 inches, for example, and are formed by cutting out the sapphire wafer.
- the sapphire wafer on which a plurality of the chips 110 are formed has a disk-shaped safari having a diameter of 4 inches formed with a plurality of buffer members.
- the wafer and the formation part of the chip and the buffer member are aligned and directly joined, and the bonded wafer is cut out at a time, as shown in Fig. 2.
- the buffer member 120 is joined to 110. Therefore, it can be said that the chip 110 and the cushioning member 120 constitute one pressure sensor chip.
- ring-shaped contact areas 1 2 1 and 1 2 2 are formed on the front surface and the back surface, respectively.
- 21 is directly bonded to the surface of the diaphragm 102 of the chip 110.
- An opening 123 is formed in the center of the cushioning member 120.
- the buffer member 120 is used to relieve stress generated when the cover plate 130 is joined, and to prevent deformation of the very thin diaphragm 102. Therefore, when no stress is generated at the time of joining, the buffer member 120 need not be used. When the buffer member 120 is not used, the cover plate 130 described below is joined to the surface of the diaphragm 102.
- a metal film is formed in advance in a joining region of the cover plate 130 by a plating method and the like.
- the metal plate 140 is joined by welding.
- the back surface 13 1 of the cover plate 130 is joined to the contact area 122 of the cushioning member 120.
- a pressure sensor made of sapphire was manufactured at a very low cost as compared with direct joining.
- a coating solution was prepared by adding titanium dioxide to an aqueous solution of boehmite (A 1 O (OH)), a hydroxide mineral of aluminum, and as shown in Fig. 5, this coating solution was The plate 140 is applied to the surface of the welded cover plate 130 to form a coating film 501.
- the cover plate 130 on which the coating film 501 is formed is heated to, for example, 450 ° C.
- the coating film composed of the boehmite aqueous solution first becomes a gel-like film.
- the gel-like boehmite on the cover plate 130 undergoes a dehydration reaction by further heating, becomes ⁇ _alumina, and is in a state of being joined to the cover plate 130 made of sapphire. .
- an intermediate layer 61 made of ⁇ -alumina or alumina in an amorphous state is formed on the bonding region on the surface of the cover plate 130 in a bonded state. .
- the intermediate layer 600 is formed by applying an aqueous solution of boehmite, the surface of the intermediate layer 600 absorbs irregularities on the surface of the cover plate 130 and is flat. It has become. This is a state where the intermediate layer 601 is sapphire and is flattened to the extent that it can be directly joined.
- Alumina has a very stable state as a corundum such as sapphire by having a corundum type crystal structure ( ⁇ phase).
- mono-alumina which has a cubic spinel-type crystal structure, is in a state in which a number of lattice defects lacking oxygen atoms exist due to an unreasonable crystal structure. In the amorphous alumina, more lattice defects are present.
- oxygen constituting the sapphire on the sapphire surface enters the lattice defects and becomes stable. Try to form a state that has been.
- the cover plate 130 made of sapphire and the intermediate layer 61 formed on this surface are in a state of being chemically bonded to each other.
- the surface of the intermediate layer 60 1 on the cover plate 130 is brought into contact with the surface of the contact area 122 of the buffer member 120, and in this state, the chip 1 1 1
- a pressure of about 100 to 300 Pa, preferably about 2000 Pa is applied between 0 and the cover plate 130, so that the chip 110 and the cover plate 130 Load is applied.
- An electric field of about 5 kVZmm is applied to the intermediate layer 601, and ultraviolet rays (185 nm) are irradiated. In addition, these are heated to about 700 ° C.
- FIG. Fig. 7 As shown in (1), first, a chip 110 to which a buffer member 120 is bonded is placed on a surface plate 701 made of ceramic such as alumina, and a cover plate 1 is placed on the buffer member 120. 30 is placed, and a pressure frame 720 is placed on the cover plate 130, and a load of a weight (about 200 kg) of the pressure frame 720 is applied. An intermediate layer (not shown) is formed between the cover plate 130 and the cushioning member 120. On the surface plate 701, a lower electrode 703 is arranged so as to surround the periphery of the chip 110 to which the buffer member 120 is bonded.
- the shielding member 704 is fitted into the opening area of the cover plate 130, and the frame-shaped upper electrode 705 disposed around the shielding member 704 is connected to the edge of the opening area of the cover plate 130. Place on the part. At this time, a gap is formed between the inside of the pressurizing frame 720 and the outside of the upper electrode 705, and the joining area between the cover plate 130 and the cushioning member 120 can be seen through the gap from above. State.
- the atmosphere is evacuated or depressurized, ultraviolet light is irradiated from the upper part of the pressurizing frame 702, and a voltage is applied between the lower electrode 703 and the upper electrode 705.
- heat is generated by applying heat to a heat transfer heater (not shown) built in the platen 701, thereby heating the entire board.
- the intermediate layer 600 shown in FIG. 6 is transformed into the ⁇ phase to form corundum, that is, sapphire, and the cover plate 130 and the cushioning member 120 are formed of the same sapphire. As a result, a tightly joined state without boundaries can be obtained.
- titanium dioxide is preliminarily added to the intermediate layer, and in addition, by applying an electric field as described above and irradiating ultraviolet rays, as described below, even at a lower temperature, aluminum is added. It is considered that the bond between oxygen and oxygen is easily broken, and it is possible to increase the mobility of each primitive.
- the titanium dioxide added to the intermediate layer generates a hole-electron pair when irradiated with ultraviolet rays.
- the generated hole-electron * f is separated, and each of them continues to exist without disappearing. If titanium dioxide in such a state exists near the anode, it receives electrons from the anode and becomes in a state of excess electrons.
- the aluminum-oxygen bond that has received the emitted electrons breaks at about 700 ° C., generating ⁇ 2 _, causing oxygen defects in the crystal lattice where oxygen atoms should not be located where they should not be. generate.
- the intermediate layer 601 is corundum-transformed by heating at about 700 ° C. It becomes possible.
- the joining process of the cover plate 130 is the highest temperature treatment, the movable electrode 104 and the fixed electrode 105 formed inside the chip 110 are heated to 700 ° C. What is necessary is just to comprise with a conductive member, such as a metal which can endure.
- a conductive member such as a metal which can endure.
- a base 150 made of glass and formed with a concave portion 151 at the center is prepared, and the cover plate 130 is provided together with the metal plate 140 together with the buffer member 120.
- the chip 110 mounted via the base 150 is fixed in the recessed part 151 of the base 150.
- the base 150 has an upper end exposed at the bottom of the recess 1501, and the base 150
- An electrode pin 152 is provided that penetrates the portion and has a lower end protruding from the bottom surface.
- a vent hole 153 penetrating below the base 150 is formed.
- a metal frame 160 is fixed to the base 150 so as to surround the periphery.
- the chip 110 is fixed by welding a metal plate 140 to the upper surface of the frame 160.
- the upper surface of the diaphragm 102 of the chip 110 passes through the opening portion 123 of the buffer member 120 and the opening region 133 of the cover plate 130, as shown in FIG. It is in a state of being exposed in a region above the paper surface. Therefore, base 1
- the fluid in the upper region of FIG. 8 separated by 50 and the frame 160 is in direct contact with the pressure receiving surface of the chip 110.
- the frame 16 0 and the metal plate 14 0, the metal plate 14 0 and the cover plate 13 3 °, the cover plate 13 0 and the cushioning member 12 0, the cushioning member 12 0 and the diaphragm 10 0 2 are joined without any gaps, so the fluid that comes into direct contact with the pressure receiving surface of the chip 110 leaks into the area at the bottom of FIG. 8 separated by the base 150 and the frame 160. I will not give it out.
- the surface roughness of the joining surface of the cover plate may be set to, for example, about 10 nm.
- the surface of the intermediate layer becomes the surface roughness of the sapphire substrate. It is only necessary that the state be absorbed and be flat.
- a sapphire substrate having a surface roughness of about 10 nm is used, for example, in a window of a wristwatch, and at this size, the price is one hundred yen, and it is inexpensive.
- such high precision is not required in the above embodiment.
- the cover plate made of sapphire can be joined in a state similar to that of direct joining without requiring high-precision processing that causes an increase in cost.
- the cushioning member and the cover plate or the chip and the cover plate It is joined through an intermediate layer of sapphire (aluminum oxide in phase), substantially similar to a chip and cover plate.
- boehmite is used.
- this is one form of aluminum hydroxide, and the same applies to the use of aluminum hydroxide such as gibbsite or diaspore.
- the intermediate layer 61 (FIG. 6) formed on the cover plate 130 made of sapphire was formed as follows.
- an aqueous solution of aluminum nitrate is applied to a predetermined area (joining area) of the cover plate 130, and the intermediate layer made of 7 _ alumina is applied onto the cover plate 130 in the area where the aqueous solution is heated and applied. 1 was formed.
- the aqueous solution of aluminum nitrate loses nitric acid after the water evaporates due to the heating, becomes a basic salt, and finally becomes a phase aluminum oxide ( ⁇ / -alumina).
- an intermediate layer 601 made of ⁇ -alumina is formed on the cover plate 130 as in the above-described embodiment. Subsequent steps are the same as in the above embodiment.
- an aqueous solution of aluminum nitrate was applied to the cover plate.However, a strong acid or strong alkaline aqueous solution was applied to the cover plate and heated to cause a chemical reaction on the sapphire itself on the surface of the cover plate. An aluminum nitrate layer may be formed on the surface of the cover plate.
- an organic solvent solution of an organometallic compound of aluminum is applied to the cover plate 130, and the cover plate 130 is heated to about 200 to 600 ° C.
- An intermediate layer 600 (FIG. 6) made of ⁇ -alumina was formed on 130.
- the organometallic compound of aluminum include, for example, ethyl acetate, benzodiamine, dimethylisopropylate, and aluminum isopropylate.
- the coating film of an organic solvent solution of an organometallic compound of aluminum is first turned on by heating.
- the solvent evaporates.
- the organometallic compound is decomposed and the organic components are vaporized, leaving aluminum oxide in an amorphous state or in a ⁇ phase other than the ⁇ phase.
- This decomposition can be performed at a lower temperature by irradiating ultraviolet rays or in an oxygen plasma.
- an intermediate layer 61 made of amorphous alumina or ⁇ -alumina is formed on the force bar plate 130 as in the above-described embodiment. Subsequent steps are the same as in the above-described embodiment.
- the electrode formed in the chip is a pressure sensor for measuring pressure, but to use a metal is not limited thereto, N a 2 0 * 1
- 1 A 1 2 O 3 K 2 0 ⁇ 1 1 A 1 2 0 3 may be a material which is called i3- alumina such as to constitute the electrodes.
- i3- alumina such as to constitute the electrodes.
- This type of / 3_alumina has conductivity 14 and is compatible with the sapphire of the electrode forming base, so that the thermal stress in the pressure sensor manufacturing process and the deformation stress of the diaphragm applied at the time of pressure measurement, etc. As a result, the peeling of the electrode due to the above is suppressed.
- alumina is a high melting point material having a melting point of 900 ° C.
- cover plate joining step a higher temperature treatment can be performed, and the phase transition of the intermediate layer made of amorphous or ⁇ -alumina can be performed more quickly and reliably.
- sapphire is used.
- the present invention is not limited to this. Any member made of ⁇ -phase aluminum oxide can be joined in the same manner as described above.
- a plate member made of ⁇ -phase aluminum oxide such as sapphire is directly applied to a pressure sensor chip in which a member such as a housing is made of ⁇ -phase aluminum oxide such as sapphire. It is possible to join in a state similar to joining, and an excellent effect is obtained that a pressure sensor made of sapphire can be formed at low cost without impairing the characteristics of sapphire.
- a plate member made of a-phase aluminum oxide, such as sapphire, can be joined to a pressure sensor chip that is made of ⁇ -phase aluminum oxide, such as iron, with a member such as a housing, in a state similar to that of direct joining. It is suitable for forming a pressure sensor at low cost without deteriorating the characteristics of the sapphire.
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US10/381,800 US6904808B2 (en) | 2000-09-29 | 2001-10-01 | Pressure sensor and method for manufacturing pressure sensor |
DE60142483T DE60142483D1 (de) | 2000-09-29 | 2001-10-01 | Verfahren zur herstellung eines drucksensors |
EP01970321A EP1329960B1 (en) | 2000-09-29 | 2001-10-01 | Method for manufacturing a pressure sensor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000298160A JP4091241B2 (ja) | 2000-09-29 | 2000-09-29 | 圧力センサおよび圧力センサの製造方法 |
JP2000-298160 | 2000-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002027803A1 true WO2002027803A1 (fr) | 2002-04-04 |
Family
ID=18780160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/008646 WO2002027803A1 (fr) | 2000-09-29 | 2001-10-01 | Capteur de pression et son procede de fabrication |
Country Status (6)
Country | Link |
---|---|
US (1) | US6904808B2 (ja) |
EP (1) | EP1329960B1 (ja) |
JP (1) | JP4091241B2 (ja) |
CN (1) | CN1208843C (ja) |
DE (1) | DE60142483D1 (ja) |
WO (1) | WO2002027803A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103148977A (zh) * | 2013-02-27 | 2013-06-12 | 东南大学 | 基于柔性基板的具有自封装功能的无源无线压力传感器 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3920551B2 (ja) * | 2000-09-29 | 2007-05-30 | 株式会社山武 | 接合方法 |
JP3925341B2 (ja) * | 2002-07-30 | 2007-06-06 | 豊田合成株式会社 | 結晶成長基板及び半導体発光素子の製造方法 |
JP4014006B2 (ja) * | 2004-06-17 | 2007-11-28 | 株式会社山武 | 圧力センサ |
JP4548771B2 (ja) * | 2004-06-25 | 2010-09-22 | 株式会社山武 | 容量式圧力センサの製造方法 |
ATE459867T1 (de) * | 2004-10-18 | 2010-03-15 | Silverbrook Res Pty Ltd | Mikro-elektromechanischer drucksensor |
US7240560B2 (en) | 2004-10-18 | 2007-07-10 | Silverbrook Research Pty Ltd | Pressure sensor with remote power source |
US7093494B2 (en) | 2004-10-18 | 2006-08-22 | Silverbrook Research Pty Ltd | Micro-electromechanical pressure sensor |
US7143652B2 (en) | 2004-10-18 | 2006-12-05 | Silverbrook Research Pty Ltd | Pressure sensor for high acceleration environment |
US7089790B2 (en) | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Pressure sensor with laminated membrane |
US7194901B2 (en) | 2004-10-18 | 2007-03-27 | Silverbrook Research Pty Ltd | Pressure sensor with apertured membrane guard |
US6968744B1 (en) | 2004-10-18 | 2005-11-29 | Silverbrook Research Pty Ltd | Capacitative pressure sensor with close electrodes |
CN1764328B (zh) * | 2004-10-18 | 2010-12-15 | 财团法人工业技术研究院 | 动态压力感测装置 |
CA2679648C (en) * | 2007-04-07 | 2015-02-03 | Inficon Gmbh | Method for the production of a diaphragm vacuum measuring cell |
EP2212662A4 (en) * | 2007-11-05 | 2015-11-18 | Univ Colorado Regents | METAL FERRITE SPINELLE ENERGY STORAGE DEVICES AND METHOD FOR MANUFACTURING THEM AND USE THEREOF |
CN101252151B (zh) * | 2008-03-21 | 2010-09-29 | 韦文生 | 一种纳米硅异质结压敏二极管及纳米硅异质结压力传感器 |
EP2229967B1 (en) | 2009-03-17 | 2020-04-15 | F.Hoffmann-La Roche Ag | Cannula assembly and ambulatory infusion system with a pressure sensor made of stacked coplanar layers |
CN102369424B (zh) | 2009-03-30 | 2014-07-30 | 阿自倍尔株式会社 | 静电电容型压力传感器 |
US8141429B2 (en) * | 2010-07-30 | 2012-03-27 | Rosemount Aerospace Inc. | High temperature capacitive static/dynamic pressure sensors and methods of making the same |
JP5969351B2 (ja) * | 2012-10-16 | 2016-08-17 | 京セラ株式会社 | 圧力センサ用部品 |
EP2920668B1 (en) * | 2012-11-14 | 2021-11-03 | GTAT Corporation | A mobile electronic device comprising an ultrathin sapphire cover plate |
JP2014126504A (ja) * | 2012-12-27 | 2014-07-07 | Azbil Corp | 静電容量型圧力センサ |
JP2015068799A (ja) * | 2013-09-30 | 2015-04-13 | セイコーエプソン株式会社 | 物理量センサー、圧力センサー、高度計、電子機器および移動体 |
DE102013220735A1 (de) * | 2013-10-14 | 2015-04-16 | Vega Grieshaber Kg | Messanordnung mit einer keramischen Messzelle |
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CN104990651A (zh) * | 2015-08-16 | 2015-10-21 | 昆山泰莱宏成传感技术有限公司 | 硅-蓝宝石差分电容式压力传感器及制作方法 |
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JP6815221B2 (ja) | 2017-02-17 | 2021-01-20 | アズビル株式会社 | 静電容量型圧力センサ |
US11083902B2 (en) * | 2018-05-29 | 2021-08-10 | International Business Machines Corporation | Biosensor package |
DE102018114300A1 (de) | 2018-06-14 | 2019-12-19 | Endress+Hauser SE+Co. KG | Druckmesseinrichtung und Verfahren zu deren Herstellung |
WO2024087110A1 (en) * | 2022-10-27 | 2024-05-02 | Yangtze Advanced Memory Industrial Innovation Center Co., Ltd | Microelectromechanical system pressure sensor with pressure sensing element having phase-change material |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3404262A1 (de) * | 1983-03-09 | 1984-09-13 | Fuji Electric Co., Ltd., Kawasaki | Kapazitiver messfuehler |
JPH06186106A (ja) * | 1992-12-18 | 1994-07-08 | Yamatake Honeywell Co Ltd | 静電容量式圧力センサ |
JPH06265428A (ja) * | 1993-03-11 | 1994-09-22 | Yamatake Honeywell Co Ltd | 静電容量式圧力センサ |
JPH06300650A (ja) * | 1993-04-12 | 1994-10-28 | Yamatake Honeywell Co Ltd | 静電容量式圧力センサ |
JPH0727645A (ja) * | 1993-07-14 | 1995-01-31 | Yamatake Honeywell Co Ltd | 静電容量式圧力センサ |
JPH07253372A (ja) * | 1994-03-15 | 1995-10-03 | Yamatake Honeywell Co Ltd | 静電容量式圧力センサ |
US5954900A (en) | 1996-10-04 | 1999-09-21 | Envec Mess- Und Regeltechnik Gmbh + Co. | Process for joining alumina ceramic bodies |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2896725B2 (ja) * | 1991-12-26 | 1999-05-31 | 株式会社山武 | 静電容量式圧力センサ |
JP3114570B2 (ja) * | 1995-05-26 | 2000-12-04 | オムロン株式会社 | 静電容量型圧力センサ |
US6167761B1 (en) * | 1998-03-31 | 2001-01-02 | Hitachi, Ltd. And Hitachi Car Engineering Co., Ltd. | Capacitance type pressure sensor with capacitive elements actuated by a diaphragm |
JP3771425B2 (ja) * | 2000-07-04 | 2006-04-26 | 株式会社山武 | 容量式圧力センサおよびその製造方法 |
-
2000
- 2000-09-29 JP JP2000298160A patent/JP4091241B2/ja not_active Expired - Fee Related
-
2001
- 2001-10-01 WO PCT/JP2001/008646 patent/WO2002027803A1/ja active Application Filing
- 2001-10-01 EP EP01970321A patent/EP1329960B1/en not_active Expired - Lifetime
- 2001-10-01 CN CNB018165893A patent/CN1208843C/zh not_active Expired - Fee Related
- 2001-10-01 DE DE60142483T patent/DE60142483D1/de not_active Expired - Lifetime
- 2001-10-01 US US10/381,800 patent/US6904808B2/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3404262A1 (de) * | 1983-03-09 | 1984-09-13 | Fuji Electric Co., Ltd., Kawasaki | Kapazitiver messfuehler |
JPH06186106A (ja) * | 1992-12-18 | 1994-07-08 | Yamatake Honeywell Co Ltd | 静電容量式圧力センサ |
JPH06265428A (ja) * | 1993-03-11 | 1994-09-22 | Yamatake Honeywell Co Ltd | 静電容量式圧力センサ |
JPH06300650A (ja) * | 1993-04-12 | 1994-10-28 | Yamatake Honeywell Co Ltd | 静電容量式圧力センサ |
JPH0727645A (ja) * | 1993-07-14 | 1995-01-31 | Yamatake Honeywell Co Ltd | 静電容量式圧力センサ |
JPH07253372A (ja) * | 1994-03-15 | 1995-10-03 | Yamatake Honeywell Co Ltd | 静電容量式圧力センサ |
US5954900A (en) | 1996-10-04 | 1999-09-21 | Envec Mess- Und Regeltechnik Gmbh + Co. | Process for joining alumina ceramic bodies |
Non-Patent Citations (1)
Title |
---|
See also references of EP1329960A4 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103148977A (zh) * | 2013-02-27 | 2013-06-12 | 东南大学 | 基于柔性基板的具有自封装功能的无源无线压力传感器 |
Also Published As
Publication number | Publication date |
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US6904808B2 (en) | 2005-06-14 |
DE60142483D1 (de) | 2010-08-12 |
JP4091241B2 (ja) | 2008-05-28 |
CN1466780A (zh) | 2004-01-07 |
EP1329960A1 (en) | 2003-07-23 |
CN1208843C (zh) | 2005-06-29 |
EP1329960A4 (en) | 2007-01-24 |
US20040007071A1 (en) | 2004-01-15 |
EP1329960B1 (en) | 2010-06-30 |
JP2002111011A (ja) | 2002-04-12 |
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