WO2002027305A1 - Dispositif de detection de defauts - Google Patents

Dispositif de detection de defauts Download PDF

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Publication number
WO2002027305A1
WO2002027305A1 PCT/JP2001/008295 JP0108295W WO0227305A1 WO 2002027305 A1 WO2002027305 A1 WO 2002027305A1 JP 0108295 W JP0108295 W JP 0108295W WO 0227305 A1 WO0227305 A1 WO 0227305A1
Authority
WO
WIPO (PCT)
Prior art keywords
unit
illumination
diffraction angle
angle
diffraction
Prior art date
Application number
PCT/JP2001/008295
Other languages
English (en)
Japanese (ja)
Inventor
Yoshinari Ota
Original Assignee
Olympus Optical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co., Ltd. filed Critical Olympus Optical Co., Ltd.
Priority to KR1020037002521A priority Critical patent/KR100705983B1/ko
Priority to JP2002530633A priority patent/JP3699958B2/ja
Priority to AU2001288115A priority patent/AU2001288115A1/en
Publication of WO2002027305A1 publication Critical patent/WO2002027305A1/fr
Priority to US10/394,379 priority patent/US6753542B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

Definitions

  • the present invention provides a defect detection device that irradiates an inspection target such as a semiconductor wafer with illumination light and performs a defect inspection based on an image of light from the inspection target, and a computer that stores the defect detection device.
  • an inspection target such as a semiconductor wafer with illumination light
  • a computer that stores the defect detection device.
  • macro inspections such as dust, unevenness, and dirt on the surface of the semiconductor substrate are performed.
  • illumination light is applied to the surface of a semiconductor wafer, its normal reflection light, diffraction light, scattered light, and the like are imaged by an imaging device, and the image data is image-processed. Detects defects such as scratches, dust, unevenness, and dirt on the semiconductor wafer surface.
  • FIG. 3 is a schematic diagram of a macro inspection device according to a conventional example.
  • a semiconductor wafer 2 is placed on the stage 1, and an illuminating unit 3 is arranged diagonally above the stage 1, and an imaging unit 4 is arranged at a position opposite the illuminating unit 3 to the semiconductor wafer 2.
  • the imaging unit 4 is arranged at a position opposite the illuminating unit 3 to the semiconductor wafer 2.
  • the semiconductor wafer is detected in order to detect the diffracted light.
  • the lighting angle for 2 is variably set.
  • the illumination unit 3 irradiates the illumination light onto the semiconductor wafer 2 while irradiating the illumination light, that is, the illumination angle.
  • the inclination angle of the part 3 with respect to the semiconductor wafer 2 is varied, for example, in the range of + 20 ° to 120 °. Then, the diffracted light from the semiconductor wafer 2 is imaged by the imaging unit 4, an angle at which the first-order diffracted light can be captured is obtained from the image data, and the illumination unit 3 is set to that angle.
  • the illumination angle is, for example, + 20 ° to 120 ° every time the type of the semiconductor wafer 2 changes.
  • the angle of inclination of the illuminator 3 must be set in order to find the incident angle at which the first-order diffracted light can be satisfactorily taken while looking at the captured image data. It takes.
  • the angle of incidence and the direction at which the imaging unit can satisfactorily capture the diffracted light from the pattern on the semiconductor wafer 2 are determined. different. For this reason, it is not always possible to set the illuminating device 3 at an optimum angle and direction in which the diffracted light can be taken.
  • An object of the present invention is to provide a defect detection device that can set illumination light at an optimal angle at which diffracted light required for inspection can be taken.
  • Another object of the present invention is to provide a computer-readable storage medium that stores a program for setting illumination light at an optimum angle at which diffracted light required for inspection can be captured. To do that.
  • a defect detection device of the present invention includes: an illumination unit that irradiates an inspection target with illumination light; and an imaging unit that captures diffracted light from the inspection target.
  • a diffraction angle calculation unit that determines a diffraction angle of the illumination light with respect to the inspection target that is optimal for imaging the diffracted light based on the design information of the inspection target.
  • An illumination setting unit configured to set an incident angle of the illumination unit to the diffraction angle calculated by the diffraction angle calculation unit.
  • FIG. 1 is a diagram showing a configuration of a defect detection device according to an embodiment of the present invention.
  • FIG. 2 is a luminance distribution diagram obtained when the angle of illumination light is changed in the defect detection device according to the embodiment of the present invention.
  • Fig. 3 is a schematic diagram of a conventional macro inspection device.
  • FIG. 1 is a diagram showing a configuration of a defect detection device according to an embodiment of the present invention.
  • the defect detection device shown in Fig. 1 detects defects on an inspection target with a regular pattern formed on the substrate surface, such as a semiconductor wafer or a glass substrate of a flat panel display such as a liquid crystal display.
  • a semiconductor wafer 2 to be inspected is placed on stage 1 .
  • a line-shaped illumination unit 3 and an image pickup unit 4 including a liner force camera are arranged.
  • the illuminating unit 3 is arranged with the optical axis inclined at a predetermined angle with respect to the surface of the semiconductor wafer 2, and irradiates line-shaped illumination light to the surface of the semiconductor wafer 2.
  • the imaging unit 4 is arranged so that the optical axis is inclined at a predetermined angle with respect to the surface of the semiconductor wafer 2, and diffracts the diffracted light from the surface of the semiconductor wafer 2 caused by the illumination from the illumination unit 3 line by line. Take an image.
  • the imaging unit 4 is fixed with the optical axis inclined at a predetermined angle.
  • the illumination unit 3 is rotatably provided so that the inclination angle with respect to the surface of the semiconductor wafer 2 can be adjusted within a predetermined range, and is fixed at a desired position by an electric or mechanical stopper. You can do it.
  • An imaging unit 4, an image display unit 5, a stage transfer rotation control unit 6, an optical system control unit 7, an illumination angle control unit 8, and a substrate transfer unit 9 are connected to the detection device main body 10.
  • the illumination unit 3 is connected to the optical system control unit 7 and the illumination angle control unit 8.
  • the stage 1 is connected to the stage transfer rotation controller 6.
  • the detection device main body 10 has a function of executing various controls necessary for automatically setting an incident angle (tilt angle) of the illumination unit 3 on the surface of the semiconductor wafer 2 and an illumination direction thereof.
  • the CPU computer power
  • the main control unit 11 is connected to a program memory 12, an image memory 13, an input unit 14, an output unit 15, and an inspection result memory 20.
  • the program stored in the program memory 12 is executed, so that the diffraction angle calculating section 16, the luminance distribution calculating section 17, and the illumination setting section 1 are provided. 8 and the functions of the defect detection unit 19 are activated.
  • the program memory 12 can be read by the main control unit 11.
  • the program memory 12 based on the design information of the semiconductor wafer 2, an optimum diffraction angle of the illumination light with respect to the semiconductor wafer 2 for imaging the diffracted light is obtained, and the diffraction angle of the illuminating part 3 is determined.
  • Control programs related to defect detection such as control for setting the incident angle, are stored.
  • the image signal output from the imaging unit 4 is digitized by an AZD converter (not shown), and the image data is stored in the image memory 13.
  • the input unit 14 is used to input design information of the semiconductor wafer 2 input from a predetermined database or input by an inspector using, for example, a keyboard and a mouse, and the wavelength of illumination light output from the illumination device 3. It has a function to capture various information such as.
  • the design information includes the pattern pitch, the reflectance, the pattern shape, and the film thickness of the semiconductor wafer 2.
  • the diffraction angle calculation unit 16 is an illumination device that is optimal for imaging the diffraction light from the semiconductor wafer 2 by the imaging unit 4 based on the design information of the semiconductor wafer 2 captured from the input unit 14. The diffraction angle of light with respect to the semiconductor wafer 2 is obtained. Further, the diffraction angle calculation unit 16 calculates the desired ⁇ n times of the diffracted light from the semiconductor wafer 2 Find the diffraction angle of the folded light. In this case, the n-th order diffracted light desired by the inspector is set by operating the keyboard or the mouse of the input unit 14.
  • the diffraction angle calculation unit 16 has a function of calculating an optimum diffraction angle of the illumination light with respect to the semiconductor wafer 2 as described above.
  • the first-order diffraction angle is represented by the following equation (1). Can be obtained by calculating. That is, if the diffraction angle is 0 d , the incident angle of the illumination light is 0 i, the diffraction order is m, the pattern pitch of the semiconductor wafer 2 is p, and the wavelength of the illumination light is;
  • the diffraction angle calculation unit 16 calculates the diffraction angle 0 d by calculating the above equation (1).
  • the above equation (1) is derived as follows.
  • the diffracted light generated from a plane grating (pattern) having a two-dimensional periodic structure satisfies the following conditions.
  • K i ' Wave number vector of incident light (illumination light) Component parallel to the lattice plane of K i
  • n d k 0 sin 0 i n i k o sin ⁇ ⁇ + K... dni: refractive index on the incident side, n d : refractive index on the diffraction side 0 i: incident angle, 6 d : diffraction angle
  • Equation (3) Equation (3)
  • the luminance distribution calculation unit 17 converts the image data obtained by the imaging unit 4 into an image when the incident angle of the illumination unit 3 is changed, for example, in a range of + 20 ° to 120 °. From the memory 13, the actual luminance distribution with respect to the incident angle of the illumination light as shown in FIG. 2 is obtained from the image data.
  • the illumination setting section 18 sends a command for setting the illumination section 3 to the diffraction angle calculated by the diffraction angle calculation section 16 to the illumination angle control section 8 via the output section 15.
  • the illumination setting unit 18 compares the actual luminance distribution calculated by the luminance distribution calculation unit 17 with the diffraction angle calculated by the diffraction angle calculation unit 16 and agrees with the diffraction angle. Or the angle of the brightness peak in the closest brightness distribution is selected as the diffraction angle.
  • the illumination setting unit 18 sends a command for setting the incident angle of the illumination unit 3 to the selected diffraction angle to the illumination angle control unit 8 via the output unit 15
  • the illumination angle control unit 8 performs illumination
  • the incident angle of the illumination unit 3 is changed according to the diffraction angle specified by the setting unit 18 and the half of the illumination unit 3 is changed.
  • the illumination angle control unit 8 and the stage transfer rotation control unit 6 rotate the illumination unit 3 integrally with and in parallel with the semiconductor wafer 2 above the semiconductor wafer 2 to irradiate the semiconductor wafer 2 with illumination light. It also has the function of changing the direction of the movement in two dimensions.
  • the stage 1 is rotated by the stage transfer rotation control unit 6, and the illumination light is transmitted to the semiconductor wafer 2.
  • the irradiation direction may be changed in two dimensions.
  • the defect inspection unit 19 converts the image data obtained by the imaging by the imaging unit 4 into an image memory 1. 3, the image data is subjected to image processing, and defects such as scratches, dust, unevenness, and dirt on the surface of the semiconductor device 2 are detected.
  • the inspection result memory 20 stores information such as the number of types of defects detected by the defect inspection unit 19, the position, and the area.
  • the image display unit 5 displays information such as the type, the number, the position, and the area of the defects detected by the defect inspection unit 19.
  • the stage transfer rotation control unit 6 moves the stage 1 on which the semiconductor wafer 2 is mounted in one direction (X direction) at a pitch synchronized with the imaging by the imaging unit 4, and controls the rotation and positioning of the stage 1. Control.
  • the stage 1 itself can be rotated.However, a rotary stage for mounting the semiconductor wafer 2 on the stage 1 that can move uniaxially is provided, and this rotary stage is rotated. Is preferred.
  • the optical system control unit 7 controls the light amount of the illumination unit 3 and the insertion of an interference filter (not shown) when acquiring an interference image.
  • the illumination angle control unit 8 controls the angle of incidence of the illumination unit 3 on the surface of the semiconductor wafer 2 according to the instruction of the main control unit 11 as described above.
  • the substrate transport section 9 takes out the semiconductor wafers 2 one by one from a storage stocker (cassette) (not shown) and places them on the stage 1. After the defect inspection, the semiconductor wafer 2 on the stage 1 is removed. Return to storage power.
  • the semiconductor wafer 2 to be inspected is taken out of a stocker (not shown) by the substrate carrying section 9, carried to the stage 1 and placed thereon. Then, the position of the stage 1 on which the semiconductor wafer 2 is mounted is determined by the stage transfer rotation control section 6. Thereafter, the following defect inspection method is performed on the semiconductor wafer 2.
  • design information of the semiconductor wafer 2 for example, a pattern pitch, a reflectance, a pattern shape, a film thickness, or a lighting unit of the semiconductor wafer 2 is obtained from a predetermined database or by operation of a keyboard and a mouse by an inspector.
  • the wavelength of the illumination light output from 3 is input to the detection device main body 10 via the input section 14.
  • the design information of the semiconductor wafer 2 is sent to the diffraction angle calculator 16.
  • the main control unit 11 reads the program in the program memory 12 and instructs the diffraction angle calculation unit 16, the illumination setting unit 18, and the defect inspection unit 19 to operate.
  • the diffraction angle calculator 16 Based on the design information of the semiconductor wafer 2 taken from the input unit 14, the above equation (1) is calculated, and the primary diffracted light from the semiconductor wafer 2 is imaged by the imaging unit 4.
  • the diffraction angle of the illuminating light with respect to the semiconductor wafer 2 and the illumination direction thereof, which are most suitable for the semiconductor wafer 2, are obtained.
  • the diffraction angle calculating unit 16 Calculation corresponding to the narrowest pattern pitch is performed.
  • the diffraction angle calculation unit 16 performs an operation corresponding to a pattern pitch that allows a wide range of inspection. Is made.
  • the illumination setting unit 18 receives the eleventh order diffraction angle calculated by the diffraction angle calculation unit 16 and sends the diffraction angle command to the illumination angle control unit 8 via the output unit 15. Send out.
  • the incident angle of the illumination unit 3 is set to the diffraction angle specified by the driving of the illumination angle control unit 8.
  • the illumination angle control unit 8 makes the illumination unit 3 parallel to the semiconductor wafer 2 above the semiconductor wafer 2 if there is an instruction on the two-dimensional direction of irradiating the semiconductor wafer 2 with the illumination light.
  • the direction of irradiating the semiconductor wafer 2 with the illumination light is changed by rotating the semiconductor wafer 2 integrally in this state or by rotating the stage 1.
  • the illumination light is output from the illumination unit 3 under the control of the optical system control unit 7 in accordance with the instruction of the main control unit 11, the illumination light is formed on the semiconductor wafer 2.
  • the semiconductor wafer 2 is irradiated at an optimum incident angle and its illumination direction at which n-order diffracted light generated due to a difference in chip pattern and pitch can be captured.
  • fine adjustment is required for the angle of the illumination unit 3 automatically set as described above due to an error between the manufactured semiconductor wafer 2 and the design information.
  • the inspector sends a fine adjustment command from the input unit 14 to the illumination angle control unit 8 via the output unit 15.
  • the illumination unit 3 is driven by the illumination angle control unit 8 to adjust the angle in accordance with the instruction.
  • the diffracted light or interference light from the semiconductor wafer 2 is imaged by the imaging unit 4, and the image signal is output from the imaging unit 4.
  • This image signal is digitized by an AZD converter (not shown) and stored as image data in the image memory 13 of the detection device main body 10.
  • the defect inspection unit 19 reads the image data obtained by the imaging of the imaging device 4 from the image memory 13, processes the image data, and processes the image data to obtain a flaw or dust on the surface of the semiconductor wafer 2. Detect defects such as unevenness and dirt. The defect inspection unit 19 stores the information on the detected defect in the inspection result memory 20 and displays the information on the image display unit 5.
  • design information of the semiconductor wafer 2 such as a pattern pitch, a reflectance, a pattern shape, and a film of the semiconductor wafer 2 are obtained from a predetermined database or by operation of a keyboard mouse by an inspector.
  • the thickness or the wavelength of the illumination light output from the illumination unit 3 is taken into the detection device main body 10 via the input unit 14.
  • the design information of the semiconductor wafer 2 is sent to the diffraction angle calculation means 16.
  • the main controller 11 stores the program in the program memory 12.
  • the operation is instructed to the reading, diffraction angle calculation unit 16, luminance distribution calculation unit 17, illumination setting unit 18, and defect inspection unit 19.
  • the diffraction angle calculation unit 16 calculates the above equation (1) based on the design information of the semiconductor wafer 2 taken in from the input unit 14, and converts the first-order diffracted light from the semiconductor wafer 2 into the imaging unit 4. Then, the diffraction angle and the diffraction direction of the illuminating light with respect to the semiconductor laser 2 which are optimal for imaging are obtained.
  • the main control unit 11 issues a command to the illumination angle control unit 8 via the output unit 15 to change the incident angle of the illumination unit 3 within a range of, for example, + 20 ° to 120 °. Emit.
  • the driving of the illumination angle control unit 8 changes the incident angle of the illumination light emitted from the illumination unit 3 to the surface of the semiconductor wafer 2 within a range of + 20 ° to 120 °.
  • the imaging unit 4 captures the diffracted light from the semiconductor wafer 2 and outputs the image signal.
  • This image signal is digitized by an AZD converter (not shown) and stored as image data in the image memory 13 of the detection device main body 10.
  • the luminance distribution calculation unit 17 converts the image data obtained when the angle of the illumination unit 3 is varied in the range of + 20 ° to 120 ° from the image memory 13 as described above. After reading, the actual luminance distribution with respect to the incident angle of the illumination light as shown in FIG. 2 is obtained from the image data.
  • the illumination setting unit 18 compares the actual luminance distribution calculated by the luminance distribution calculation unit 17 with the diffraction angle calculated by the diffraction angle calculation unit 16, and calculates the diffraction angle. Matches or most Select the angle of the luminance peak in the close luminance distribution as the diffraction angle.
  • the illumination setting unit 18 sends a command for setting the incident angle of the illumination unit 3 to the selected diffraction angle to the illumination angle control unit 8 via the output unit 15.
  • the incident angle of the illumination unit 3 is set to the diffraction angle specified by the driving of the illumination angle control unit 8.
  • the illumination angle control unit 8 makes the illumination unit 3 parallel to the semiconductor wafer 2 above the semiconductor wafer 2 when the two-dimensional direction of irradiating the illumination light onto the semiconductor wafer 2 is instructed.
  • the direction of irradiating the semiconductor wafer 2 with the illumination light is changed by rotating the stage 1 integrally or by rotating the stage 1.
  • the illumination light is transmitted to the chip pattern formed on the semiconductor wafer 2.
  • the semiconductor wafer 2 is irradiated at an optimum angle and a direction in which the diffracted light generated due to the difference in the pitch and the pitch can be captured. Due to the error between the manufactured semiconductor wafer 2 and the design information, fine adjustment may be required for the incident angle of the illumination unit 3 automatically set as described above. In this case, the inspector sends a fine adjustment command from the input unit 14 to the illumination angle control unit 8 via the output unit 15. Thus, the illumination unit 3 is adjusted in angle according to the instruction by driving the illumination angle control unit 8.
  • the diffracted light or the interference light from the semiconductor wafer 2 is imaged by the imaging unit 4, and the image signal is output from the imaging unit 4.
  • This image signal is digitized by an AZD converter (not shown), and is converted into image data of the image memory 1 of the detection device main body 10 as image data. 3 will be considered.
  • the defect inspection unit 19 reads the image data obtained by the imaging of the imaging device 4 from the image memory 13, performs image processing on the image data, and processes the image data on the surface of the semiconductor wafer 2. Detect defects such as spots, unevenness and dirt. The defect inspection unit 19 stores the information on the detected defect in the inspection result memory 20 and displays the information on the image display unit 5.
  • the diffraction angle calculation unit 16 obtains the optimum diffraction angle and the diffraction direction for imaging the diffracted light based on the design information of the semiconductor wafer 2. However, depending on the type of the semiconductor wafer 2, if the other diffracted light is easier to observe than the diffracted light obtained by setting the diffraction angle automatically set, the inspector informs the input section. In step 14, operate the keyboard and mouse to specify the desired nth-order diffracted light. Thereby, the diffraction angle calculation unit 16 obtains the optimum diffraction angle and its diffraction direction for imaging the n-th order diffracted light specified based on the design information of the semiconductor device 2.
  • the diffraction angle calculation unit 16 calculates the diffraction angles and the diffraction directions at which both chips in both directions can be observed together with the semiconductor wafer 2. It can be obtained based on the design information of
  • the imaging unit 4 captures the diffracted light generated by the illumination light output from the illumination unit 3 set to the corresponding diffraction angle and the diffraction direction, and the image data is used as a defect. Inspection unit 1 9
  • defects such as scratches, dust, unevenness, and dirt on each chip on the surface of the semiconductor wafer 2 having a chip pattern in two directions can be detected.
  • the diffraction angle calculator 16 can calculate the diffraction angle of each layer based on the thickness of the design information. Thereby, the angle of the diffracted light due to the influence of the surface layer can be calculated and the image can be taken without calculating the angle of the diffracted light due to the influence of the base of the semiconductor wafer 2.
  • stage transfer rotation control section 6 can perform rotation control together with the transfer control of the stage 1 as described above.
  • the rotation control of the stage 1 is controlled so as to correspond to the direction of the pattern of the semiconductor wafer 2 to be inspected.
  • the direction of the pattern of the semiconductor wafer 2 depends on the direction of the pattern. In some cases, diffracted light cannot be imaged. For example, if the direction of the pattern is 90 ° with respect to the line direction of the illumination light, it becomes impossible to image the diffracted light.
  • the stage 1 is controlled to rotate by the stage transfer / rotation control unit 6, and for example, the stage 1 is rotated 90 ° with respect to the center vertical line.
  • the direction of the pattern of the semiconductor wafer 2 becomes the same as the line direction of the illumination light, so that diffracted light can be imaged.
  • the illumination angle control unit 8 can control the inclination angle of the illumination unit 3 with respect to the surface of the semiconductor wafer 2 three-dimensionally.
  • the inclination angle of the illumination unit 3 with respect to the surface of the semiconductor wafer 2 is controlled in two dimensions, it is not always possible to image the diffracted light in a state of high directivity.
  • the illumination unit 3 by operating the illumination unit 3 in three dimensions, it is possible to image the diffracted light having the highest directivity according to the pattern of the semiconductor wafer 2.
  • the same effect can be obtained by controlling the stage 1 to swing in three dimensions by the stage transfer rotation control unit 6.
  • the illuminating section 3 is not limited to one that irradiates linear illumination light, and one that irradiates radial illumination light is also applicable.
  • the radial illumination light is converted into a line by a lens.
  • the semiconductor wafer 2 has been described as an object to be inspected. It can also be applied to inspection for defects such as contamination and dirt.
  • the design information of the semiconductor wafer 2 (for example, the pattern pitch, the reflectance, the pattern shape, the film thickness, or the wavelength of the illumination light output from the illumination unit 3 of the semiconductor wafer 2)
  • the diffraction angle of the illumination light with respect to the semiconductor wafer 2 that is optimal for imaging the diffracted light is obtained based on the above, and the incident angle or the illumination direction of the illumination unit 3 is set to the calculated diffraction angle.
  • the chip formed on the semiconductor wafer 2 can be manufactured.
  • the illuminator 3 can be automatically set to the optimal incident angle and direction to capture the first-order diffracted light, and the inspection does not take much time. No.
  • the desired n-order diffraction data can be specified by the input unit 14, and the The optimum diffraction angle and its direction for imaging the diffracted light can be determined based on the design information in (2).
  • the diffraction angle and the diffraction direction in which the chips in both directions can be observed together can be obtained based on the design information of the semiconductor wafer 2. And are possible.
  • the actual luminance distribution calculated by the luminance distribution calculation unit 17 is compared with the diffraction angle calculated by the diffraction angle calculation unit 16 to determine whether the diffraction angle matches the diffraction angle.
  • the angle of the luminance peak in the closest luminance distribution is defined as the diffraction angle, and the angle of incidence of the illumination unit 3 is set to the diffraction angle. Accordingly, even if the diffraction angle and the diffraction direction in which the first-order diffracted light can be captured are changed due to the difference in the pattern of the chips formed on the semiconductor wafer 2 and the pitch thereof, for example, it is possible to optimally capture the first-order diffracted light.
  • the illumination unit 3 can be automatically set at the incident angle and the illumination direction, and the inspection does not take much time.
  • the defect detection apparatus which can set illumination light to the optimal angle which can take in the diffracted light required for an inspection can be provided.

Abstract

L'invention porte sur un dispositif de détection de défauts comportant: une unité d'éclairage de l'objet à contrôler, et une unité d'imagerie de la lumière diffractée par l'objet qui détecte d'éventuels défauts à partir des données d'image fournies par l'unité d'imagerie. Le dispositif comporte en outre une unité qui calcule, en fonction des informations de représentation de l'objet, l'angle de diffraction par rapport à l'objet pour la lumière incidente donnant la diffraction optimale, ainsi qu'une unité de réglage de l'angle d'incidence de l'unité d'éclairage en fonction de l'angle de diffraction calculé.
PCT/JP2001/008295 2000-09-26 2001-09-25 Dispositif de detection de defauts WO2002027305A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020037002521A KR100705983B1 (ko) 2000-09-26 2001-09-25 결함검출장치 및 컴퓨터에 의해 판독 가능한 기억매체
JP2002530633A JP3699958B2 (ja) 2000-09-26 2001-09-25 欠陥検出装置及びコンピュータにより読み取り可能な記憶媒体
AU2001288115A AU2001288115A1 (en) 2000-09-26 2001-09-25 Flaw detecting device and computer-readable storage medium
US10/394,379 US6753542B2 (en) 2000-09-26 2003-03-21 Defect detection apparatus and storage medium readable by computer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000292938 2000-09-26
JP2000-292938 2000-09-26

Related Child Applications (1)

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US10/394,379 Continuation US6753542B2 (en) 2000-09-26 2003-03-21 Defect detection apparatus and storage medium readable by computer

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WO2002027305A1 true WO2002027305A1 (fr) 2002-04-04

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JP (1) JP3699958B2 (fr)
KR (1) KR100705983B1 (fr)
AU (1) AU2001288115A1 (fr)
TW (1) TWI285738B (fr)
WO (1) WO2002027305A1 (fr)

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JP2007040915A (ja) * 2005-08-05 2007-02-15 Toppan Printing Co Ltd 周期構造の欠陥測定装置
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KR20030027060A (ko) 2003-04-03
AU2001288115A1 (en) 2002-04-08
US20030178588A1 (en) 2003-09-25
JPWO2002027305A1 (ja) 2004-02-05
US6753542B2 (en) 2004-06-22
KR100705983B1 (ko) 2007-04-11
TWI285738B (en) 2007-08-21

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