WO2001084887A1 - Plaque chauffante en ceramique - Google Patents

Plaque chauffante en ceramique Download PDF

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Publication number
WO2001084887A1
WO2001084887A1 PCT/JP2001/003777 JP0103777W WO0184887A1 WO 2001084887 A1 WO2001084887 A1 WO 2001084887A1 JP 0103777 W JP0103777 W JP 0103777W WO 0184887 A1 WO0184887 A1 WO 0184887A1
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WO
WIPO (PCT)
Prior art keywords
ceramic
heating element
resistance heating
substrate
ceramic substrate
Prior art date
Application number
PCT/JP2001/003777
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English (en)
Japanese (ja)
Inventor
Yasuji Hiramatsu
Yasutaka Ito
Original Assignee
Ibiden Co., Ltd.
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Filing date
Publication date
Application filed by Ibiden Co., Ltd. filed Critical Ibiden Co., Ltd.
Publication of WO2001084887A1 publication Critical patent/WO2001084887A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic

Definitions

  • the present invention relates to a ceramic heater mainly used in the semiconductor industry, and more particularly to a ceramic heater excellent in uniform control of temperature distribution on a substrate heating surface.
  • a typical semiconductor chip is manufactured by slicing a silicon single crystal into a predetermined thickness to produce a silicon wafer, and then forming a plurality of integrated circuits and the like on the silicon wafer.
  • a silicon wafer placed on an electrostatic chuck is subjected to various processes such as etching and CVD to form a conductive circuit or to apply a resin for resist. After that, heating and drying are performed. Ceramic heaters are often used for such treatments.
  • Japanese Patent Application Laid-Open Nos. Hei 11-43030 and Hei 4-43049 disclose ceramic ceramics made of carbide or nitride.
  • a ceramic heater as shown in FIG. 1 has a configuration in which resistance heating elements are arranged concentrically or spirally.
  • a resistive heating element pattern having an even arrangement, if the pattern is divided into two or more to be individually controlled, interference occurs due to each pattern. In this case, if power is applied excessively in one pattern, it will affect the temperature distribution of other patterns, and it will be impossible to control the temperature distribution accurately over the entire substrate.
  • An object of the present invention is to provide a ceramic having excellent controllability of uniform temperature distribution on a substrate heating surface.
  • An object of the present invention is to provide a heater.
  • Another object of the present invention is to provide a plurality of heating element patterns provided on a single substrate, so that heat interference does not occur between adjacent resistance heating element patterns.
  • the idea is to design the layout of the turns.
  • the present invention is a ceramic heater according to the following gist configuration.
  • a buffer area is provided between the adjacent resistance heating element patterns. Is provided.
  • the buffer region is a region for mitigating heat interference occurring between adjacent resistive heating element patterns.
  • the ceramic substrate has a circular shape.
  • the ceramic substrate is made of a carbide ceramic or a nitride ceramic.
  • the surface of the ceramic substrate is covered with an insulating layer.
  • the insulating layer is formed of a layer coated with an oxide ceramic.
  • the buffer region has a width in a radial direction of the ceramic substrate and a size within a range of 0.5% to 35.5% of the substrate diameter.
  • the buffer region has a width that is more than about twice the distance between the respective resistance heating elements in the resistance heating element pattern.
  • the ceramic substrate according to the above (9) is characterized in that it has a disk shape.
  • the ceramic substrate according to the above (9) is characterized in that it is a charcoal nitride or a nitride ceramic.
  • the width in the radial direction of the non-resistance heating element forming region is 0.5% to 35% of the diameter of the ceramic substrate.
  • the width in the diameter direction of the non-resistance heating element formation region is characterized by exceeding twice the diametric width between the resistance heating elements constituting the resistance heating element formation region.
  • the present invention is a ceramic heater in which a plurality of resistance heating element patterns constituting independent circuits that are individually controlled are provided on the surface or inside of a ceramic substrate.
  • the temperature of the ceramic substrate can be controlled for each part.
  • a thermocouple, a thermopure, or the like is attached and the temperature of the ceramic substrate is measured, the applied power can be controlled for each resistance heating element pattern, and the temperature distribution on the substrate heating surface can be finely adjusted. Will be able to
  • a buffer area which is a non-resistance heating element forming area, is provided between the respective resistance heating element patterns.
  • This buffer area is composed of adjacent resistance heating element patterns This is a region for mitigating the thermal interference that occurs between one another. With such a buffer area, even if a large amount of electric power is applied to one resistive heating element pattern and the temperature of this area rises, the effect of the temperature rise is affected by the presence of the buffer area. Precise temperature distribution can be controlled without spreading to other resistance heating element pan formation areas.
  • FIG. 2 shows that the temperature of a laminar heater having the conventional resistance heating element pattern shown in FIG. 1 is raised to 140 ° C., and a semiconductor wafer at 25 ° C. is placed on the surface of the ceramic substrate.
  • FIG. 9 shows a temporal change in temperature in the middle, center, and outer peripheral portions of the ceramic substrate when held at an interval of 0 zm.
  • the temperature of each part did not stabilize and the temperature distribution was not even after 40 seconds as shown in the figure.
  • the ceramic heater having the resistive heating element pattern according to the present invention shown in FIG. 4 due to the existence of the buffer area, the settling has already been set after the elapse of 40 seconds as shown in FIG.
  • the temperature distribution is almost completely uniform.
  • the buffer area is provided between each of the individually controlled resistance heating element patterns, so that the influence of the temperature change of another adjacent resistance heating element pattern can be reduced. This can be eliminated or reduced, and uniform control of the temperature distribution on the heating surface of the ceramic substrate can be performed quickly and accurately.
  • the ceramic heater of the present invention is formed by combining concentric, spiral, and bent (wavy) resistance heating element patterns and disposing them in the radial direction.
  • the buffer area that is, the area where the resistance heating element pattern is not formed, is an area where the resistance heating element pattern is formed and an area where another resistance heating element circuit is formed adjacent to the area. And where no so-called resistance heating element is formed.
  • the size (distance) of the buffer area in the radial direction of the substrate is determined by the distance between adjacent resistance heating elements in each pattern. It is desirable to make the width larger than the space between them, especially more than twice (radial space).
  • the size (interval) in the radial direction of the substrate between the patterns of the resistance heating elements and the turns is 0.5% to 35%, preferably 0.5% to 35%, in the radial direction (width) of the circular ceramic substrate. Should be about 5% to 30%.
  • the width of the buffer area between the respective resistive heating element patterns is smaller than the above-mentioned width, or if the spacing in the radial direction of the ceramic substrate is less than 5%, heat interference occurs. If it exceeds 0%, the temperature in the buffer region becomes too low, and in any case, the temperature distribution on the heating surface tends to be uneven.
  • FIG. 1 is a rear view of a ceramic substrate illustrating a conventional resistance heating element pattern
  • FIG. 2 is a graph showing a temperature distribution of a conventional ceramic heater
  • FIG. 3 is a temperature distribution of a ceramic heater according to the present invention
  • FIG. 4 is a rear view of a ceramic substrate illustrating a resistance heating element pattern according to the present invention
  • FIG. 5 is a partial cross-sectional view of the ceramic heater, which is partially cut away.
  • the ceramic substrate of the present invention uses a nitride ceramic or a carbide ceramic as a ceramic substrate, and preferably forms an oxide ceramic insulating layer on the surface thereof. This is because nitride ceramics as a substrate material tend to have a low volume resistance at high temperatures due to solid solution of oxygen and the like, and carbide ceramics have conductivity unless they are highly purified. By coating the substrate with an oxide ceramic, a short circuit between the patterns can be prevented even at high temperatures or even when impurities are contained, and the temperature controllability can be further facilitated.
  • nitride ceramic constituting the ceramic substrate examples include metal nitride ceramics, for example, aluminum nitride, silicon nitride, boron nitride, titanium nitride, and the like.
  • the above-mentioned carbide ceramics include metal carbide ceramics, for example, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, tanste carbide. And the like. It should be noted that an oxide ceramic may be used as the ceramic substrate, and alumina, silica, glasslite, mullite, zirconia, beryllia, and the like can be used.
  • a sintering aid in the ceramic substrate material.
  • Alkali metal oxides, alkaline earth metal oxides, and rare earth oxides can be used as sintering aids for aluminum nitride.
  • these sintering aids CaO, Y 2 ⁇ 3, Na 2 0, Li. ⁇ , Rb 2 0 3 are preferred.
  • alumina may be used.
  • the content of these sintering aids is desirably 0.1 to 20 wt%.
  • silicon carbide it is preferable to use B 4 C, C, or ALN as a sintering aid.
  • the ceramic substrate contains about 5 to 500 ppm of carbon.
  • the ceramic substrate can be blackened, and when used as a heater, the radiation characteristics of radiant heat can be expected to be improved.
  • the carbon may be amorphous or crystalline. When amorphous carbon is used, it is possible to prevent a decrease in volume resistivity at high temperatures, and when using crystalline one, it is possible to prevent a decrease in thermal conductivity at high temperatures. Because you can. Therefore, depending on the application, both crystalline carbon and amorphous carbon may be used in combination. Further, the content of carbon is more preferably 50 to 2000 ppm.
  • the ceramic substrate has a diameter of 20 Omm or more, especially 12 inches (300 mm) or more. This is because it can be adapted to the next generation of semiconductor wafers.
  • the thickness is preferably 5 Omm or less, particularly preferably 25 mm or less. The reason is that when the thickness of the ceramic substrate exceeds 25 mm, the heat capacity of the ceramic substrate becomes large, and the temperature follow-up property in the case of heating and cooling via the temperature control means 5 is reduced. In this sense, it is optimal that the thickness of the substrate is about 5 mm or more, and the thickness is preferably more than 1.5 mm.
  • an oxide ceramic is desirable, and specifically, silica, alumina, mullite, cordierite, beryllia, or the like can be used.
  • the insulating layer may be formed by subjecting a sol solution obtained by hydrolyzing and polymerizing an alkoxide to spin coating, followed by baking, or by performing a treatment such as sputtering or CVD.
  • the insulating layer may be an oxide layer formed by oxidizing the surface of a ceramic substrate.
  • the semiconductor wafer is directly mounted on the surface (heating surface) of the ceramic substrate on which the wafer is mounted, and the semiconductor wafer is supported on support pins (reflection pins) or spacers.
  • support pins reflection pins
  • spacers spacers.
  • a certain distance may be interposed between the ceramic substrate and the wafer and held.
  • the distance between the substrate heating surface and the semiconductor wafer is desirably about 5 to 500 ⁇ m.
  • a bottomed hole 6 can be provided as needed to embed a thermocouple as a side temperature element. This is because the temperature of the ceramic substrate is measured by the thermocouple, and based on the data, the voltage and the current to each resistance heating element pattern are changed to effectively control the temperature distribution of the entire substrate.
  • the size of the junction of the metal wires of the thermocouple should be the same as or larger than the diameter of each metal wire. For example, 0.5 mm or less is preferable. With this configuration, the heat capacity of the junction is reduced, and the temperature can be accurately and quickly converted to a current value. As a result, the temperature controllability is improved, and the difference in the temperature distribution on the substrate heating surface can be reduced.
  • thermocouple for example, as shown in JIS-C-162 (1980), K-type, R-type, B-type, S-type, E-type, J-type and T-type Can be used.
  • This thermocouple may be bonded to the bottom of the bottomed hole using gold brazing, silver brazing, or the like, or may be inserted into the bottomed hole and sealed with a heat-resistant resin.
  • a heat-resistant resin for example, a thermosetting resin, particularly, an epoxy resin, a polyimide resin, a bismaleimide-triazine resin, or the like can be used. These resins may be used alone or in combination of two or more.
  • gold brazing it is selected from 37-80.5wt% Au-63-; L9.5wt% Cu alloy, 81.5-82.5wt Au-18.5-17.5wt% Ni alloy At least one is preferred. These are because the melting temperature is 900 ° C or higher, and it is difficult to melt even in a high temperature region.
  • the silver solder for example, an Ag—C 11-based solder can be used.
  • the resistance heating element is divided into at least two or more patterns composed of independent circuits that can be controlled individually. More preferably, it is divided into the following patterns. Since the resistance heating element pattern is divided into a plurality of parts, the amount of heat generated is changed by individually controlling the power supplied to each resistance heating element pattern, and the temperature distribution of the entire substrate, that is, the temperature of the wafer heating surface The distribution can be finely adjusted. As examples of the pattern of the resistance heating element, concentric, spiral, eccentric, bent (wavy), etc. are well suited.
  • a conductive paste containing metal particles is applied to the surface of the ceramic substrate to form a conductive paste layer having a predetermined pattern, which is then baked. And firing the above metal particles.
  • the firing of the metal particles is desirably performed so that the metal particles fuse with each other and between the metal particles and the ceramic.
  • FIG. 4 is an example of a preferred embodiment of the resistance heating element pattern of the present invention.
  • a concentric resistive heating element pattern 2a is provided on the front surface (substrate back surface) of the ceramic substrate 1 opposite to the non-heated surface, a central portion is provided with two concentric resistive heating elements,
  • the resistance heating element patterns 2b, 2b, and the outer periphery are divided into four wavy resistance heating element patterns 2c in the circumferential direction, each with a buffer area 3 It was formed.
  • the buffer region 3 Due to the presence of the buffer region 3, for example, even if a large amount of power is applied to the resistance heating element pattern 2 b and the temperature rises, the buffer region 3 exists, and concentric circular resistance heating element patterns 2 a and The wavy resistance on the outside has no effect on the heating element pattern 2c and does not interfere with each other.c Therefore, the temperature such as lowering the temperature of the resistance heating element pattern 2a or the resistance heating element pattern 2c No control is required, and the temperature difference on the heated surface of the substrate can be reduced quickly with simple control.
  • Each of the resistance heating element patterns 2 a, 2 b, 2 b ′, and 2 c is formed in a concentric, spiral, or bent (wave-shaped) pattern as described above. It is desirable to form a circuit in the evening formation region. This is because it is easier to control if the control unit is a single circuit.
  • the thickness of the resistance heating element itself is preferably about 1 to 30 m, more preferably 1 to 10 m.
  • the line width of the resistive heating element is preferably about 0.1 to 20 mm, more preferably about 0.1 to 5 mm.
  • Such a resistance heating element can vary its resistance value depending on its width and thickness, but the above range is the most practical. The resistance value increases as the thickness decreases and the resistance decreases.
  • the resistance heating element By arranging the resistance heating element as described above, the heat generated from the resistance heating element is diffused throughout the ceramic substrate while propagating in the thickness direction of the substrate, and the object to be heated (silicon wafer) The temperature distribution on the surface where the object is heated is made uniform, and as a result, the temperature in each part of the object to be heated is made uniform.
  • This resistance heating element may have a rectangular or elliptical cross section, but is preferably flat. This is because the flattened surface is more scattered toward the wafer heating surface, and thus it is difficult to achieve a non-uniform temperature distribution on the wafer heating surface. That is, the aspect ratio (width of the heating element / thickness of the heating element) of the cross section of the resistance heating element is desirably about 10 to 500,000. Adjusting this range will increase the resistance of the heating element. This is because the uniformity of the temperature of the wafer heating surface can be ensured.
  • the aspect ratio is smaller than the above range, the amount of heat transmitted in the direction of the heating surface of the ceramic substrate 1 to the wafer decreases, and the heat distribution approximated to the pattern of the heating element becomes smaller. It occurs on the heated surface, and conversely the aspect ratio
  • the aspect ratio of the cross section is 10 to 500.
  • the aspect ratio of the resistance heating element is as follows when the resistance heating element is formed on the surface of the substrate. If it is formed inside, it is desirably 200 to 500,000.
  • the aspect ratio can be increased when the resistance heating element is formed inside the substrate.
  • the distance between the wafer heating surface and the heating element becomes shorter, and This is because it is necessary to make the heating element itself flat because the temperature uniformity of the heating element decreases.
  • the conductive paste for forming such a resistance heating element is not particularly limited, but contains metal particles or conductive ceramic for ensuring conductivity, and also contains a resin, a solvent, a thickener, etc. Is preferred.
  • metal particles for example, noble metals (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel and the like are preferable. These may be used alone or in combination of two or more. This is because these metals are relatively hard to oxidize and have sufficient resistance to generate heat.
  • the conductive ceramic include carbides of tungsten and molybdenum. These may be used alone or in combination of two or more.
  • the metal particles or conductive ceramic particles preferably have a particle size of 0.1 to 100 ⁇ m. If it is too small, less than 0.1 m, it is liable to be oxidized, while if it exceeds 100 m ', sintering becomes difficult and the resistance value becomes large.
  • the shape of the metal particles may be spherical or scaly. Use these metal particles -In that case, it may be a mixture of the above-mentioned spheres and the above-mentioned flakes. When the metal particles are flakes or a mixture of spheres and flakes, the metal oxide between the metal particles is easily retained, and the adhesion between the heating element and the nitride ceramic is improved. This is advantageous because it can ensure that the resistance can be increased.
  • Examples of the resin used for the conductor base include an epoxy resin and a phenol resin.
  • Examples of the solvent include isopropyl alcohol.
  • Examples of the thickener include cellulose.
  • the conductor paste is formed by adding a metal oxide to metal particles and sintering the metal particles and the metal oxide as a resistance heat generator.
  • the ceramic substrate ie, the nitride ceramic or the carbide ceramic
  • the ceramic substrate ie, the nitride ceramic or the carbide ceramic
  • the surface of metal particles and the surfaces of nitride ceramics and carbide ceramics are slightly oxidized. This does not mean that the oxide films are formed by sintering through the metal oxide to form an integrated film, thereby improving the adhesion between the metal particles and the nitride ceramic or the carbide ceramic. It is thought.
  • metal oxide for example, at least one selected from the group consisting of lead oxide, zinc oxide, silica, boron oxide (B 2 ⁇ 3 ), alumina, methanol and titania is preferable. This is because these oxides can improve the adhesion between the metal particles and the nitride ceramic or the carbide ceramic without increasing the resistance value of the heating element.
  • the amount of the metal oxide to be added to the metal particles is preferably from 0.1 wt% to less than 10 wt%. Further, when the heating element is formed by using the conductor paste having such a configuration, the sheet resistivity is preferably 1 to 45 ⁇ / port.
  • the sheet resistivity exceeds 45 ⁇ , the calorific value becomes too small with respect to the applied voltage, and it is difficult to control the calorific value of a ceramic substrate provided with a resistive heating element on its surface. If the added amount of the metal oxide is 1 O wt% or more, the sheet resistivity exceeds 50 ⁇ , and the calorific value becomes too small, so that the temperature control becomes difficult and the uniformity of the temperature distribution decreases. I do.
  • the surface of the heating element is desirably covered with a metal coating layer 8 as shown in FIG. This is to prevent the internal resistance heating element (metal sintered body) from being oxidized and changing the resistance value.
  • the thickness of the metal covering layer 8 to be formed is preferably 0.1 to 10 zm.
  • the metal used for forming the metal coating layer 8 is not particularly limited as long as it is a non-oxidizing metal. Specific examples include gold, silver, palladium, platinum, and nickel. Can be These may be used alone or in combination of two or more. Of these, nickel is preferred.
  • connection terminal 9 with pins for connecting to an external power supply.
  • the connection terminal 9 is attached to the resistance heating element 2 via a solder layer 10. This is because the thermal diffusion of the solder is prevented.
  • Examples of the connection terminal 9 include, for example, terminal pins made of console.
  • solder layer 10 is preferably 0.1 to 50 m. This is because the range is sufficient to secure connection by soldering.
  • a slurry is prepared by mixing a sintering aid such as yttria or a binder as necessary with the powder of the above-mentioned nitride ceramic or carbide ceramic, and then preparing the slurry.
  • a sintering aid such as yttria or a binder as necessary with the powder of the above-mentioned nitride ceramic or carbide ceramic, and then preparing the slurry.
  • thermocouple a temperature measuring element such as a thermocouple or a portion serving as a through hole 4 into which a lift pin 5 for supporting a silicon wafer can be vertically moved as required, in the above-described formed body.
  • the portion which becomes the bottomed hole 6 of the above is formed.
  • the formed body is heated, fired, and sintered to produce a ceramic plate.
  • the ceramic substrate 1 is manufactured by processing into a predetermined shape, but may be a shape that can be used as it is after firing.
  • Heating and firing may be performed at a temperature equal to or higher than the sintering temperature.
  • the temperature is 100 to 250 ° C.
  • the conductor paste is generally a high-viscosity fluid composed of metal particles, a resin, and a solvent.
  • the conductor paste is printed on the portion where the resistance heating element is to be provided by screen printing or the like to form a conductor paste layer.
  • the resistance heating element should be printed in a pattern as shown in Fig. 4 because it is necessary to keep the entire substrate at a uniform temperature.
  • the conductor paste layer is desirably formed so that the cross section of the resistance heating element 2 after firing is rectangular and flat.
  • the conductor paste layer printed on the bottom surface of the ceramic substrate 1 is heated and baked to remove the resin and the solvent, and the metal particles are sintered and baked on the bottom surface of the substrate 1 to form the resistance heating element 2 .
  • the heating and firing temperature is preferably from 500 to 100 ° C.
  • the metal oxide is added to the conductor paste, the metal particles, substrate and Since the metal oxide and the metal oxide are sintered and integrated, the adhesion between the resistance heating element 2 and the ceramic substrate 1 is improved.
  • the metal coating layer 8 can be formed by electrolytic plating, electroless plating, sputtering or the like, but in consideration of mass productivity, electroless plating is optimal.
  • connection terminal 9 for connection to an external power supply is attached to an end of the pattern of the resistance heating element 2 via a solder layer 10.
  • thermocouples are fixed to the bottomed holes 6 with silver braze, gold braze, etc., sealed with polyimide or other heat-resistant resin, and the production of ceramic heaters is completed.
  • an electrostatic electrode may be provided to serve as a static chuck, or a cap top conductor layer may be provided to serve as a wafer prober.
  • thermocouple (diameter: 1.1 mm, depth 2 mm).
  • a disk having a diameter of 8 inches (210 mm) was cut out from the plate to obtain a ceramic plate (ceramic substrate 1).
  • a conductive paste was printed on the ceramic substrate 1 obtained in the above (3) by screen printing.
  • the printing patterns were two concentric patterns and four wavy patterns on the outer periphery as shown in FIG.
  • the distance between the resistance heating element pattern 2a and the resistance heating element pattern 2b is 1 mm
  • the distance between the resistance heating element pattern 2b and the resistance heating element pattern 25c is 20mm
  • the resistance heating element pattern 2 c The distance between them is 8 mm.
  • the distance between the circumferentially adjacent resistance heating element patterns 2c is 8 mm. Also,
  • Solvent PS 603D manufactured by Tokuka Chemical Laboratory, which is used for forming through holes in printed wiring boards, was used.
  • This conductive paste is a silver-lead paste, and based on 100 parts by weight of silver, lead oxide (5 wt%), zinc oxide (55 wt%), silica (10 wt%), boron oxide (25 wt%) and It contained 7.5 parts by weight of metal oxide consisting of alumina (5 wt%).
  • the silver particles had an average particle size of 4.5 ⁇ m and were scaly.
  • the ceramic substrate on which the conductive paste is printed is heated and fired at 780 ° C. 5 to sinter the silver and lead in the paste and to bake the substrate 1 to generate resistance heat.
  • Body 2 formed.
  • the silver-lead resistance heating element 2 had a thickness of 5 m, a width of 2.4 mm, and an area resistivity of 7.7 ⁇ / m2.
  • the ceramic substrate 1 prepared in (5) above was treated with nickel sulfate 80 g / l, sodium hypophosphite 24 g / l, sodium acetate 12 g / l, boric acid 8 g / l, and ammonium chloride 6 gZl.
  • the metal coating layer (nickel layer) 8 having a thickness of 1 m was deposited on the surface of the silver-lead resistance heating element 2 by immersing it in an electroless nickel plating bath composed of an aqueous solution.
  • a silver-lead solder paste (manufactured by Tanaka Kikinzoku) was printed by screen printing on the portion where the connection terminals 9 with pins for securing connection to the power supply were to be formed, thereby forming a solder layer 150.
  • Kovar external terminal connection pins 9 were placed on the solder layer 10 and reflowed by heating at 420 ° C., and the connection terminals 9 were attached to the surface of the resistance heating element 2.
  • a thermocouple was buried in the bottomed hole 6 for temperature control, filled with polyimide resin, and baked at 190 ° C for 2 hours to obtain a ceramic heater (Fig. 4). .
  • Aluminum nitride powder manufactured by Tokuyama, average particle size: LI j
  • yttria average particle size: 0.4 jam
  • 4 parts by weight acrylic binder, 11.5 parts by weight, dispersing agent, 0.5 parts by weight
  • a green sheet having a thickness of 0.47 mm was obtained by molding using a paste obtained by mixing 53 parts by weight of alcohol composed of ethanol and ethanol by a dough plate method.
  • connection pad for connection with the connection terminal pin 9
  • a conductive paste B was prepared by mixing 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 ⁇ m, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of a terpionone solvent, and 0.2 parts by weight of a dispersant. Prepared.
  • the conductive paste A was printed on a green sheet by a screen printing method to form a conductive paste layer.
  • As the printing pattern three concentric patterns as shown in FIG. 4 were formed near the center and four wavy patterns were formed on the outer periphery.
  • the distance between the resistance heating element pattern 2a and the resistance heating element pattern 2b is 7 O mm
  • the distance between the resistance heating element pattern 2b and the resistance heating element pattern 2c is 20 mm
  • the distance between the heating elements is 2 mm.
  • the through-hole provided in the substrate 1 was filled with the conductive paste B.
  • Tungsten paste is further printed on the green sheet after the above processing -37 green sheets not to be laminated were stacked on the upper side (heating surface) and 13 on the lower side at 130 ° C and a pressure of 80 kg / cm.
  • the obtained laminate was degreased in a nitrogen gas at 600 ° C for 5 hours, and subjected to a hot press at 1890 ° C and a pressure of 150 kg / cm for 3 hours to form a 3 mm-thick aluminum nitride 5 plate. I got a body. This is cut out into a 210mm disk, with a thickness of 6 zm and a width of 1
  • a ceramic heater having a 0 mm resistance heating element embedded therein was obtained.
  • connection terminal 9 for power supply connection was fixed.
  • connection terminals 9 is desirably a structure that supports the tungsten support at three points. This is because connection reliability can be ensured.
  • thermocouple of Example 1 for temperature control was inserted and buried in the bottomed hole 6, embedded with a silicon sol, and dried at 100 ° C for 1 hour to produce a ceramic heater. Completed.
  • Example 1 a single concentric resistive heating element pattern 2 having spirals having different diameters arranged on the entire substrate as shown in FIG.
  • the diameter of the ceramic substrate 1 is 210 mm
  • the resistance heating element pattern is 2.4 mm
  • the radial width between the resistance heating elements is 4.8 mm.
  • Example 2 It is the same as in Example 1, but has three spiral (concentric) patterns as shown in FIG. 1, and four wavy patterns on the outer periphery.
  • the distance between the resistive heating element pattern 2a and the resistive heating element pattern 2b is 77mm
  • the distance between the resistive heating element pattern 2b and the resistive heating element pattern 2c is 20mm
  • the distance between the adjacent Resistance heating element pattern The distance between 2c is 0.8 mm.
  • the distance between the resistance heating elements in the resistance heating element pattern is l mm.
  • Example 1 and Comparative Example 1 were connected to a temperature controller (Omron E5ZE) equipped with a calculation unit, a power supply unit, and a control unit, and the temperature was raised to 140 ° C. Over time, the change in the surface temperature of the ceramic substrate over time was measured when the wafer with the temperature sensor at 25 ° C. was held close to a distance of 100 ⁇ m. The results are shown in FIGS. 2 and 3.
  • FIG. 3 shows Example 1 and FIG. 2 shows Comparative Example 1.
  • Example 1 the temperature returned to 140 ° C. after the elapse of 40 seconds, and was completely settled. However, in Comparative Example 1, it was not settled even after 40 seconds had elapsed. It took 60 seconds to settle.
  • the ceramic heater of the present invention it was confirmed that the temperature distribution on the heating surface can be easily and reliably uniformized with a simple control when the resistance heating element is divided into a plurality and controlled. .
  • the ceramic heater of the present invention is used for an apparatus for manufacturing a semiconductor or inspecting a semiconductor.
  • Examples include an electrostatic chuck, a wafer prober, and a susceptor.
  • an electrostatic chuck in addition to the resistance heating element, an electrostatic electrode,
  • the RF electrode When the RF electrode is used as a wafer prober, a check top conductor layer is formed on the surface as a conductor, and the guard electrode and ground electrode are conductive inside. It is formed as a body. Further, the ceramic substrate for a semiconductor device of the present invention is preferably used at 100 ° C. or higher, preferably 200 ° C. or higher. The upper temperature limit is 800 ° C.

Abstract

L'invention concerne une plaque chauffante en céramique comprenant des motifs de corps de chauffe par résistance posés sur un substrat et des zones tampon entre les motifs de corps de chauffe par résistance contigus destinées à empêcher des interférences thermiques entre lesdits motifs. La contrôlabilité de la répartition uniforme de la température dans la surface de chauffe du substrat est particulièrement excellente.
PCT/JP2001/003777 2000-04-29 2001-05-01 Plaque chauffante en ceramique WO2001084887A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000169734 2000-04-29
JP2000-169734 2000-04-29

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WO2001084887A1 true WO2001084887A1 (fr) 2001-11-08

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003257593A (ja) * 2002-02-27 2003-09-12 Kyocera Corp ウエハ支持部材
JP2006279060A (ja) * 2006-05-19 2006-10-12 Sumitomo Electric Ind Ltd 半導体製造装置用セラミックスヒーター

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH025392A (ja) * 1987-11-24 1990-01-10 Philips Gloeilampenfab:Nv ガラス―セラミック加熱素子及びその製造方法
JPH0677148A (ja) * 1992-07-07 1994-03-18 Ngk Insulators Ltd 半導体ウエハー加熱装置
JPH1140330A (ja) * 1997-07-19 1999-02-12 Ibiden Co Ltd ヒーターおよびその製造方法
JPH11297806A (ja) * 1998-04-15 1999-10-29 Ulvac Corp ホットプレート

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH025392A (ja) * 1987-11-24 1990-01-10 Philips Gloeilampenfab:Nv ガラス―セラミック加熱素子及びその製造方法
JPH0677148A (ja) * 1992-07-07 1994-03-18 Ngk Insulators Ltd 半導体ウエハー加熱装置
JPH1140330A (ja) * 1997-07-19 1999-02-12 Ibiden Co Ltd ヒーターおよびその製造方法
JPH11297806A (ja) * 1998-04-15 1999-10-29 Ulvac Corp ホットプレート

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003257593A (ja) * 2002-02-27 2003-09-12 Kyocera Corp ウエハ支持部材
JP2006279060A (ja) * 2006-05-19 2006-10-12 Sumitomo Electric Ind Ltd 半導体製造装置用セラミックスヒーター

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