WO2001048277A1 - Procede et appareil utiles pour produire un monocristal de carbure de silicium - Google Patents
Procede et appareil utiles pour produire un monocristal de carbure de silicium Download PDFInfo
- Publication number
- WO2001048277A1 WO2001048277A1 PCT/JP2000/009238 JP0009238W WO0148277A1 WO 2001048277 A1 WO2001048277 A1 WO 2001048277A1 JP 0009238 W JP0009238 W JP 0009238W WO 0148277 A1 WO0148277 A1 WO 0148277A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- raw material
- silicon
- carbon
- silicon carbide
- single crystal
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Definitions
- the silicon carbide single crystal obtained by the sublimation method that is, the method using silicon carbide powder as a raw material
- the silicon carbide single crystal obtained by the sublimation method that is, the method using silicon carbide powder as a raw material
- the silicon carbide single crystal obtained by the sublimation method has a high quality and a stable quality.
- the properties are not satisfactory enough.
- it is necessary to use high-purity silicon carbide powder as a raw material but high-purity raw materials are difficult to obtain and are expensive. There is also.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60036197T DE60036197T2 (de) | 1999-12-27 | 2000-12-26 | Verfahren und vorrichtung zur herstellung von einkristallen aus siliciumcarbid |
EP00985890A EP1158077B1 (en) | 1999-12-27 | 2000-12-26 | Method and apparatus for producing single crystal of silicon carbide |
AU22256/01A AU2225601A (en) | 1999-12-27 | 2000-12-26 | Method and apparatus for producing single crystal of silicon carbide |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP37046099 | 1999-12-27 | ||
JP11/370460 | 1999-12-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001048277A1 true WO2001048277A1 (fr) | 2001-07-05 |
Family
ID=18496970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2000/009238 WO2001048277A1 (fr) | 1999-12-27 | 2000-12-26 | Procede et appareil utiles pour produire un monocristal de carbure de silicium |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1158077B1 (ja) |
AU (1) | AU2225601A (ja) |
DE (1) | DE60036197T2 (ja) |
WO (1) | WO2001048277A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004131376A (ja) * | 2002-09-19 | 2004-04-30 | Showa Denko Kk | 炭化珪素単結晶、その製造方法および製造装置 |
JP2006503781A (ja) * | 2002-05-15 | 2006-02-02 | セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク | 単結晶炭化ケイ素の形成 |
WO2008056758A1 (fr) * | 2006-11-09 | 2008-05-15 | Bridgestone Corporation | Procédé destiné à la production d'un monocristal de carbure de silicium |
JP2010150111A (ja) * | 2008-12-26 | 2010-07-08 | Fujikura Ltd | 窒化物単結晶とその製造方法および製造装置 |
WO2013151045A1 (ja) * | 2012-04-03 | 2013-10-10 | 独立行政法人物質・材料研究機構 | 結晶成長方法および結晶成長装置 |
CN117187961A (zh) * | 2023-09-21 | 2023-12-08 | 通威微电子有限公司 | 气动补料长晶设备和方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2008335680B2 (en) * | 2007-12-12 | 2013-11-21 | Sk Siltron Css, Llc | Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes |
CN102586858A (zh) * | 2012-04-01 | 2012-07-18 | 北京华进创威电子有限公司 | 一种双坩埚感应加热物理气相传输生长单晶的装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06128094A (ja) * | 1992-10-19 | 1994-05-10 | Nisshin Steel Co Ltd | 炭化ケイ素単結晶の製造方法 |
JPH06316499A (ja) * | 1993-04-30 | 1994-11-15 | Sharp Corp | 炭化珪素単結晶の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3384242B2 (ja) * | 1996-03-29 | 2003-03-10 | 株式会社豊田中央研究所 | 炭化珪素単結晶の製造方法 |
US5985024A (en) * | 1997-12-11 | 1999-11-16 | Northrop Grumman Corporation | Method and apparatus for growing high purity single crystal silicon carbide |
EP0933450B1 (en) * | 1998-01-19 | 2002-04-17 | Sumitomo Electric Industries, Ltd. | Method of making SiC single crystal and apparatus for making SiC single crystal |
-
2000
- 2000-12-26 WO PCT/JP2000/009238 patent/WO2001048277A1/ja active IP Right Grant
- 2000-12-26 AU AU22256/01A patent/AU2225601A/en not_active Abandoned
- 2000-12-26 EP EP00985890A patent/EP1158077B1/en not_active Expired - Lifetime
- 2000-12-26 DE DE60036197T patent/DE60036197T2/de not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06128094A (ja) * | 1992-10-19 | 1994-05-10 | Nisshin Steel Co Ltd | 炭化ケイ素単結晶の製造方法 |
JPH06316499A (ja) * | 1993-04-30 | 1994-11-15 | Sharp Corp | 炭化珪素単結晶の製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP1158077A4 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006503781A (ja) * | 2002-05-15 | 2006-02-02 | セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク | 単結晶炭化ケイ素の形成 |
JP2004131376A (ja) * | 2002-09-19 | 2004-04-30 | Showa Denko Kk | 炭化珪素単結晶、その製造方法および製造装置 |
JP4505202B2 (ja) * | 2002-09-19 | 2010-07-21 | 昭和電工株式会社 | 炭化珪素単結晶の製造方法および製造装置 |
WO2008056758A1 (fr) * | 2006-11-09 | 2008-05-15 | Bridgestone Corporation | Procédé destiné à la production d'un monocristal de carbure de silicium |
JP2010150111A (ja) * | 2008-12-26 | 2010-07-08 | Fujikura Ltd | 窒化物単結晶とその製造方法および製造装置 |
WO2013151045A1 (ja) * | 2012-04-03 | 2013-10-10 | 独立行政法人物質・材料研究機構 | 結晶成長方法および結晶成長装置 |
JPWO2013151045A1 (ja) * | 2012-04-03 | 2015-12-17 | 国立研究開発法人物質・材料研究機構 | 結晶成長方法および結晶成長装置 |
CN117187961A (zh) * | 2023-09-21 | 2023-12-08 | 通威微电子有限公司 | 气动补料长晶设备和方法 |
Also Published As
Publication number | Publication date |
---|---|
DE60036197D1 (de) | 2007-10-11 |
EP1158077A1 (en) | 2001-11-28 |
DE60036197T2 (de) | 2008-05-15 |
EP1158077A4 (en) | 2003-07-23 |
AU2225601A (en) | 2001-07-09 |
EP1158077B1 (en) | 2007-08-29 |
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