DE60036197D1 - Verfahren und vorrichtung zur herstellung von einkristallen aus siliziumkarbid - Google Patents

Verfahren und vorrichtung zur herstellung von einkristallen aus siliziumkarbid

Info

Publication number
DE60036197D1
DE60036197D1 DE60036197T DE60036197T DE60036197D1 DE 60036197 D1 DE60036197 D1 DE 60036197D1 DE 60036197 T DE60036197 T DE 60036197T DE 60036197 T DE60036197 T DE 60036197T DE 60036197 D1 DE60036197 D1 DE 60036197D1
Authority
DE
Germany
Prior art keywords
silicon carbide
producing crystals
crystals
producing
carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60036197T
Other languages
English (en)
Other versions
DE60036197T2 (de
Inventor
Masashi Shigeto
Kotaro Yano
Nobuyuki Nagato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of DE60036197D1 publication Critical patent/DE60036197D1/de
Application granted granted Critical
Publication of DE60036197T2 publication Critical patent/DE60036197T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60036197T 1999-12-27 2000-12-26 Verfahren und vorrichtung zur herstellung von einkristallen aus siliciumcarbid Expired - Lifetime DE60036197T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP37046099 1999-12-27
JP37046099 1999-12-27
PCT/JP2000/009238 WO2001048277A1 (fr) 1999-12-27 2000-12-26 Procede et appareil utiles pour produire un monocristal de carbure de silicium

Publications (2)

Publication Number Publication Date
DE60036197D1 true DE60036197D1 (de) 2007-10-11
DE60036197T2 DE60036197T2 (de) 2008-05-15

Family

ID=18496970

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60036197T Expired - Lifetime DE60036197T2 (de) 1999-12-27 2000-12-26 Verfahren und vorrichtung zur herstellung von einkristallen aus siliciumcarbid

Country Status (4)

Country Link
EP (1) EP1158077B1 (de)
AU (1) AU2225601A (de)
DE (1) DE60036197T2 (de)
WO (1) WO2001048277A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2839730B1 (fr) * 2002-05-15 2004-08-27 Centre Nat Rech Scient Formation de carbure de silicium monocristallin
JP4505202B2 (ja) * 2002-09-19 2010-07-21 昭和電工株式会社 炭化珪素単結晶の製造方法および製造装置
JP2008120615A (ja) * 2006-11-09 2008-05-29 Bridgestone Corp 炭化珪素単結晶の製造方法
RU2495163C2 (ru) * 2007-12-12 2013-10-10 Доу Корнинг Корпорейшн Способ получения больших однородных кристаллов карбида кремния с использованием процессов возгонки и конденсации
JP5182758B2 (ja) * 2008-12-26 2013-04-17 株式会社フジクラ 窒化物単結晶の製造方法および製造装置
CN102586858A (zh) * 2012-04-01 2012-07-18 北京华进创威电子有限公司 一种双坩埚感应加热物理气相传输生长单晶的装置
WO2013151045A1 (ja) * 2012-04-03 2013-10-10 独立行政法人物質・材料研究機構 結晶成長方法および結晶成長装置
CN117187961A (zh) * 2023-09-21 2023-12-08 通威微电子有限公司 气动补料长晶设备和方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06128094A (ja) * 1992-10-19 1994-05-10 Nisshin Steel Co Ltd 炭化ケイ素単結晶の製造方法
JPH06316499A (ja) * 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
JP3384242B2 (ja) * 1996-03-29 2003-03-10 株式会社豊田中央研究所 炭化珪素単結晶の製造方法
US5985024A (en) * 1997-12-11 1999-11-16 Northrop Grumman Corporation Method and apparatus for growing high purity single crystal silicon carbide
EP0933450B1 (de) * 1998-01-19 2002-04-17 Sumitomo Electric Industries, Ltd. Verfahren und Vorrichtung zur Herstellung eines SiC-Einkristalles

Also Published As

Publication number Publication date
EP1158077A4 (de) 2003-07-23
EP1158077A1 (de) 2001-11-28
AU2225601A (en) 2001-07-09
WO2001048277A1 (fr) 2001-07-05
DE60036197T2 (de) 2008-05-15
EP1158077B1 (de) 2007-08-29

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