WO2001020650A1 - Systeme d'exposition, dispositif d'exposition, dispositif d'application, dispositif de developpement, et procede de regulation de l'environnement de traitement de plaquette dans le systeme d'exposition - Google Patents

Systeme d'exposition, dispositif d'exposition, dispositif d'application, dispositif de developpement, et procede de regulation de l'environnement de traitement de plaquette dans le systeme d'exposition Download PDF

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Publication number
WO2001020650A1
WO2001020650A1 PCT/JP1999/005026 JP9905026W WO0120650A1 WO 2001020650 A1 WO2001020650 A1 WO 2001020650A1 JP 9905026 W JP9905026 W JP 9905026W WO 0120650 A1 WO0120650 A1 WO 0120650A1
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WO
WIPO (PCT)
Prior art keywords
exposure
substrate
chamber
space
coating
Prior art date
Application number
PCT/JP1999/005026
Other languages
English (en)
Japanese (ja)
Inventor
Toshihiko Tsuji
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to PCT/JP1999/005026 priority Critical patent/WO2001020650A1/fr
Priority to AU56513/99A priority patent/AU5651399A/en
Priority to TW088116365A priority patent/TW430877B/zh
Publication of WO2001020650A1 publication Critical patent/WO2001020650A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

Definitions

  • Exposure system Exposure system, exposure apparatus, coating apparatus, developing apparatus, and method for controlling processing environment of substrate in exposure system
  • the present invention relates to, for example, an exposure system used in a photolithography process in a manufacturing process of a micro device such as a semiconductor device, a liquid crystal display device, an imaging device, a thin film magnetic head, a reticle, and a photo mask.
  • a micro device such as a semiconductor device, a liquid crystal display device, an imaging device, a thin film magnetic head, a reticle, and a photo mask.
  • the present invention relates to an apparatus, a coating apparatus, an imaging apparatus, and a method for controlling a processing environment of a substrate in an exposure system.
  • the photolithography process for manufacturing semiconductor devices and the like is roughly divided into the following steps.
  • Photosensitive material application step A step of applying a photosensitive material such as photoresist on a substrate such as a wafer or a glass plate.
  • Exposure step a step of projecting and transferring an image of a pattern formed on a mask such as a reticle or a photomask onto the substrate on which the photosensitive material has been applied in the photosensitive material application step.
  • Developing step a step of developing a latent image of the pattern formed on the substrate in the exposing step.
  • the photosensitive material coating step and the developing step are realized by a coating and developing apparatus (coater, developer) installed in a clean room.
  • the exposing step is realized by an exposing apparatus also installed in a clean room.
  • the coating and developing apparatus and the exposing apparatus deliver the substrate between the two apparatuses.
  • the exposure system may be connected via an interface device to constitute an exposure system having an in-line configuration. In this case, the transfer of the substrate is performed between the coating and developing device and the exposure device by a substrate transfer device provided in the interface device.
  • the coating and developing apparatus various chemicals are used because the processes of coating the photosensitive material and developing the pattern image are performed as described above. For this reason, if the coating and developing apparatus and the exposure apparatus are simply connected via an interface apparatus, vapors, droplets, and the like derived from the chemicals will be generated in the exposure apparatus via the interface apparatus. May invade Such vapors, droplets and the like adhere to various optical elements provided in the exposure apparatus or the surface of a carried-in substrate or the like and become a contaminant, thereby lowering the exposure accuracy of the pattern in the exposure apparatus. This is one factor.
  • the pressure in the coating and developing apparatus is not uniform, but varies from manufacturer to manufacturer. For this reason, it is necessary to adjust the pressure on the exposure apparatus side according to the coating and developing apparatus to be connected, and there is a problem that it is troublesome.
  • the pressure adjustment on the side of the exposure apparatus is performed by adjusting a supply amount of a clean gas such as air into a chamber in which a stage for mounting each optical element, a mask, a substrate, etc. of the exposure apparatus is housed. It is common to be done. In other words, the pressure inside the exposure tool This has been raised by increasing the supply of clean gas from the air conditioner that air-conditions the chamber.
  • a clean gas such as air
  • a measurement system for accurately measuring the position and the inclination of the stage and the substrate using light for measurement is also provided in the chamber.
  • the supply amount of the clean gas is increased as described above, the flow of the clean gas around the measurement light becomes turbulent, and the space through which the measurement light passes fluctuates. There has been a new problem that the measurement accuracy may be reduced.
  • the present invention has been made by paying attention to such problems existing in the conventional technology.
  • the objectives are: an exposure system that can perform accurate exposure while avoiding the cumbersome adjustment of each device and the size of each device, and control of the processing environment of the exposure device, the coating device, the developing device, and the substrate in the exposure system. It is to provide a method. Disclosure of the invention
  • an exposure system is installed in a first space (14), and an exposure apparatus (12) for forming an image of a pattern on a substrate (W); and an exposure system is installed in the first space (14).
  • a processing apparatus (1 1) having a processing function different from that of the exposure apparatus (1 2), and transfer of the substrate (W) between the exposure apparatus (1 2) and the processing apparatus (1 1).
  • the gas inside the processing device (1 1) is passed through the first space (14).
  • the processing apparatus is, for example, a coating apparatus having a function of coating a photosensitive material on a substrate (W), or a function of developing a substrate (W) on which a pattern image is formed.
  • a developing device having a coating function a coating developing device having a coating function and a developing function (11).
  • the gas inside at least one of the coating device and the developing device and the exposure device is discharged to the second space different from the first space where those devices are installed via the delivery unit.
  • the contaminants floating inside the coating device or the developing device are discharged to the second space together with the gas inside the coating device or the developing device. Therefore, it is possible to suppress the intrusion of contaminants from the coating device or the developing device into the light-emitting device without increasing the pressure in the exposure device higher than the pressure in the coating device or the developing device.
  • the pollutant is not released into the first space. Therefore, when air for air-conditioning the inside of the exposure apparatus is taken in from the third space, it is possible to prevent the contaminants from entering the inside of the exposure apparatus.
  • the inside of the first space is inside the coating apparatus or the developing apparatus. Since the possibility of the presence of contaminants floating in the air is low, it is possible to suppress the deterioration of the filter due to the contaminants.
  • the exposure apparatus (1 2) includes a substrate exchange mechanism (6 2) for exchanging the substrate (W), a substrate stage (WST) on which the substrate (W) is mounted, and an illumination optical system (illuminating the mask (R)). 7) and a projection optical system (71) for projecting an image of the pattern formed on the mask (R) onto the substrate (W) mounted on the substrate stage (W).
  • the interior of the device (1 2) contains a substrate stage (WST) and a first chamber (78) for accommodating the first part of the projection optical system (71), a part of the illumination optical system (77), and a projection optical system.
  • the first chamber (78) is divided into a second chamber (65) for accommodating the first part of the system (71) and a third chamber (66) for accommodating the substrate exchange mechanism (62). , Room 2 (65), Room 3 (6 You may set so that the pressure inside may become low in order of 6). That is, the pressure of the gas inside the first chamber (78)> second chamber (65)> third chamber (66) may be controlled.
  • a gas flow is formed from the first chamber to the second chamber and from the second chamber to the third chamber in the exposure apparatus. For this reason, in the exposure apparatus, a gas flow from a chamber having high required cleanliness and high precision of temperature control to a low chamber is ensured.
  • the pressure inside the transfer section (1 3) should be lower than the pressure inside any of the third chamber (66) of the coating device (11), the exposure device (12), and the developing device (11). May be set.
  • the gas in the coating device, the third chamber of the exposure device, and the developing device is reliably discharged to the second space via the delivery unit.
  • an exposure apparatus (12) is connected to at least one of a coating device (1 1) that applies a photosensitive material on the substrate (W) and a developing device (11) that develops the substrate (W) on which the pattern image has been transferred. Then, the image of the pattern formed on the mask (R) is transferred to the substrate (W) coated with the photosensitive material via the projection optical system (71). At least one of the coating device (11) and the developing device (11) and the exposure device (12) are installed in the first space.
  • the exposing device includes a delivery unit (1 3) for transferring the substrate (W) between the exposing device and at least one of the coating device (11) and the developing device (11), and a coating device (1). 1) and at least one of the developing device (11) and the exposing device (12) through a transfer part (13) to transfer a second gas different from the first space (14) through the delivery part (13). Exhaust means to exhaust into space (54)
  • an application device (11) is connected to an exposure device (12) for transferring the image of the pattern formed on the mask (R) to the substrate (W), and is exposed on the substrate (W) to transfer the pattern.
  • the coating device (1 1) and the exposure device (1 2) are installed in the first space.
  • the coating device includes: a delivery section (13) for transferring a substrate (W) to and from the exposure device (1 2); and a gas inside the coating device (1 1) and the exposure device (1 2).
  • An exhaust means (52) is provided through the delivery section (13) to discharge to a second space (54) different from the first space (14).
  • the gas inside the coating device and the exposure device is discharged to the second space different from the first space where the devices are installed via the delivery unit.
  • the contaminants floating inside the coating device are discharged into the second space together with the gas inside the coating device. For this reason, it is possible to suppress the intrusion of contaminants from the coating device into the exposure device without increasing the pressure in the exposure device higher than the pressure in the coating device.
  • a developing device (11) is connected to the exposure device S (1 2) that transfers the image of the pattern formed on the mask (R) onto the substrate (W) coated with the photosensitive material. Develop the substrate (W) on which the pattern image has been transferred.
  • the exposure device (1 2) and the developing device (1 1) are installed in the first space.
  • the developing device (1 1) includes a transfer section (13) for transferring the substrate (W) to and from the exposure device (1 2), and a transfer device (13) for the exposing device (12) and the developing device (11).
  • An exhaust means (52) is provided for discharging the internal gas to a second space (54) different from the first space (14) via the delivery section (13).
  • the gas inside the exposure device and the developing device is discharged to the second space different from the first space in which the devices are installed via the delivery unit.
  • the contaminants floating inside the developing device are discharged to the second space together with the gas inside the developing device. For this reason, it is possible to suppress the intrusion of contaminants from the developing device into the exposure device without increasing the pressure in the exposure device higher than the pressure in the developing device.
  • an environment control method for an exposure system A photosensitive material is applied onto the substrate (W) by the coating device (11), and the substrate (W) coated with the photosensitive material is received by the exposing device (12) via the transfer part (13). Passed. Then, the image of the pattern formed on the mask (R) is transferred onto the substrate (W) by the exposure device (12), and the substrate (W) on which the pattern image is transferred is developed through the transfer unit. Handed over to device (1 1). Then, the substrate (W) to which the pattern has been transferred is developed by the developing device (11). At least one of the coating device (11) and the developing device (11) and the exposure device (12) are installed in the first space.
  • FIG. 1 is a cross-sectional view showing a schematic configuration of an exposure system according to a first preferred embodiment of the present invention when a wafer is carried in and out of a coating and developing apparatus.
  • FIG. 2 is a block diagram showing a schematic configuration of the exposure system of FIG.
  • FIG. 3 is a cross-sectional view showing a schematic configuration of FIG. 1 when a wafer is carried in and out of an exposure apparatus.
  • FIG. 4 is a sectional view showing a schematic configuration of a main part of an exposure apparatus according to a second preferred embodiment of the present invention.
  • FIG. 5 is a cross-sectional view illustrating a schematic configuration of a main part of a coating and developing apparatus according to a third preferred embodiment of the present invention.
  • this exposure system is composed of a coating and developing device 11 as a coating device and a developing device, an exposure device 12 and an interface device 13 as a delivery unit. .
  • These coating / developing apparatus 11, exposure apparatus 12 and interface apparatus 13 are installed in a clean room 14 as a first space, and chambers 21 and 2 are provided for air conditioning and dust prevention, respectively. It is housed in 2, 23.
  • a first opening 24 for transferring a wafer W as a substrate is formed at a joint portion between the coating and developing device 11 and the interface device 13, and the first opening 24 is opened and closed.
  • Shutter 25 is provided.
  • a second opening 26 for transferring the wafer W is formed at a joint between the exposure apparatus 12 and the interface apparatus 13, and a shutter for opening and closing the second opening 26. 27 are provided.
  • the coating / developing unit 11 includes a carry-in unit 31, a carry-out unit 32, a coater unit (coating unit) 33, a developer unit (developing unit) 34, and a wafer transfer unit 35, It is equipped with a wafer loading unit 36, a wafer transfer device 37 and an air conditioner 38. Each of these units 31 to 36 and the wafer transfer device 37 are partitioned into a unit room 39 partitioned below the chamber 21, and the air conditioner 38 is partitioned above the chamber 21. Each of them is disposed in the air conditioner room 40. Further, on the wall opposite to the first opening 24 of the coating and developing apparatus 11, an opening / closing door 4 for loading or unloading a wafer carrier for accommodating a plurality of wafers W is carried out.
  • a carrier carry-in / out port 42 having 1 is provided. Then, the wafer carrier is carried into the carrier carry-in unit 31 in the chamber 21 through the carrier carry-in / out port 42, and the wafer carrier is carried in from the carrier carry-out unit 32.
  • the carry-in unit 31 contains several wafers to be processed by this exposure system.
  • a carrier mounting table for mounting the wafer carrier containing W is provided.
  • the carrier mounting table is provided with a positioning device such as a universal coupling for detachably mounting the wafer carrier, and an elevating device for raising and lowering the wafer carrier as necessary.
  • the carrier carry-out unit 32 is equipped with a carrier mounting table on which a wafer carrier for accommodating a plurality of wafers W processed by the exposure system is mounted.
  • This carrier mounting table is also equipped with a positioning device and a lifting device similar to the carrier mounting table of the carrier carry-in unit 31.
  • the coating unit 33 includes a spin coating device, a baking device, and the like.
  • the spin coater is for forming a uniform resist film on the wafer W by rotating a wafer W placed on a rotary table in a horizontal state while dripping a photo resist. Before and after the application of the photoresist, the wafer W is appropriately subjected to baking and cooling by a baking device for dehydration and the like.
  • the developer unit 34 is a device that includes a spin developer, a baking device, and the like, and develops a latent image in a registry formed on the surface of the wafer W after the exposure processing.
  • the spin developer is for developing the developer by spraying a developer onto the surface of the wafer W by, for example, a nozzle while rotating the wafer W.
  • the wafer W is appropriately cooled by baking before and after development by a baking device for dehydration and the like.
  • the wafer unloading unit 35 temporarily stores the wafer W coated with the photo resist by the coat unit 33 until the wafer W is unloaded to the exposure apparatus 12. Further, the wafer carry-in unit 36 temporarily stores the wafer W carried in from the exposure apparatus 12 until the wafer W is subjected to development in the developer unit 34.
  • the wafer transfer device 37 has a hand portion 43 at the tip for vacuum suction of the wafer W.
  • the robot comprises an articulated robot 44 and a slide device 45 for moving the articulated robot 44 in the X-axis direction.
  • the horizontal direction along the plane of the paper is the X-axis direction
  • the direction perpendicular to the plane of the paper is the Y-axis direction
  • the vertical direction along the plane of the paper is the Z-axis direction.
  • the wafer transfer device 37 is disposed between the units 31 to 36, and has a role of transferring (transferring) wafers to the units 31 to 36.
  • the wafer transfer unit 37 is connected via a first opening 24 between a wafer transfer unit 35 or a wafer transfer unit 36 and a wafer transfer table 51 of an interface device 13 described later. It is also responsible for loading and unloading wafers W.
  • the air conditioner 38 takes air in the clean room 14 into the air conditioner room 40 via a chemical filter 46 arranged on a wall surface above the chamber 21. Then, the air conditioner 38 is supplied to the unit room 39 as clean air via the chemical filter 47 in a state where the taken air is adjusted to a predetermined temperature and humidity by a compressor in the air conditioner 38. .
  • the interface device 13 absorbs the difference (inconsistency) in the design specifications between the coating and developing device gl 1 and the exposure device 12 designed and manufactured independently of each other, and also maintains the exposure device 12.
  • This is a device installed to improve the performance.
  • the coating and developing apparatus 1] and the exposure apparatus 12 are designed and manufactured independently of each other, and these are combined to form a production line (exposure system), for example, the transfer position of the wafer W is not suitable. A matching part may occur. Therefore, an interface device 13 is interposed between the coating and developing device 11 and the exposure device 12 so that the interface device 13 has a function of elevating and lowering the wafer W. Differences in design specifications can be absorbed while maintaining independence.
  • the interface device 13 includes a wafer delivery table 51 and a blower 52 as an exhaust means.
  • the wafer transfer table 51 is provided on the transfer path of the wafer W between the coating and developing apparatus 11 and the exposure apparatus 12 in the transfer chamber 53 of the chamber 21.
  • the blower 52 is disposed below the chamber 23 and plays a role of discharging the air in the delivery room 53 to the floor 54 of the clean room 14 as the second space.
  • the exposure apparatus 12 includes an exposure apparatus main body 61, a wafer loader 62 as a substrate exchange mechanism, a reticle loader 63, and an air conditioner 64.
  • the chamber 22 accommodating the exposure apparatus 12 includes a main chamber 65 serving as a second chamber accommodating the exposure apparatus main body 61, and a first transfer chamber 66 serving as a third chamber accommodating the wafer loader 62. And a transfer room 67 as a third room for housing the reticle loader 63 and an air conditioning room 68 for housing an air conditioner 64.
  • the exposure apparatus main body 6 1 has a role of performing an exposure process of projecting and transferring an image of a pattern formed on the reticle R as a mask onto the wafer W via the projection optical system 71.
  • the lens barrel 71 a that houses the projection optical system 71 is filled with an inert gas such as nitrogen, helium, neon, argon, krypton, xenon, and radon.
  • the exposure apparatus body 6 1 has a vibration isolating table 7 2 installed on the floor of the chamber 22, and the X, Y, and ⁇ axes are mounted on the vibration isolating table 72 via a stage base 73.
  • a wafer stage WS ⁇ ⁇ that can move in the direction is mounted. Then, the wafer W is suction-held on the wafer stage W S # via the wafer holder 74.
  • a first column 75 is planted on the vibration isolating table 72 so as to include the moving range of the wafer stage WS #, and a projection optical system 71 is attached to the upper center of the first column 75.
  • the second column 76 is fixed on the first column 75, and the second A reticle stage RST for holding the reticle R by suction is provided at the upper center of the system 76.
  • the reticle stage RST holds the reticle R so as to be able to move synchronously with the scanning of the wafer W.
  • An illumination optical system 77 for illuminating the reticle R is disposed above the reticle stage RST.
  • the exposure light for example, K r F excimer laser light, A r F excimer one laser light, F 2, single-laser light or the like is summer as is emitted.
  • inert gas such as nitrogen, helium, neon, argon, krypton, xenon, and radon is also provided inside the lens barrel that houses the illumination optical system 77. Is filled with
  • a column room 78 as a first room is defined by a first column 75.
  • the wafer stage WST and the end of the projection optical system 71 on the wafer side are accommodated in the column chamber 78, and the end of the projection optical system 71 on the reticle R side and the illumination optical system 77 are It will be housed in the main room 65.
  • a movable mirror 79 is attached to one end of the wafer stage WST in the X-axis direction and the Y-axis direction.
  • a laser interferometer 80 is disposed so as to face each movable mirror 79. Then, the position of the wafer stage WST in the X-axis direction and the Y-axis direction is measured by interference between the laser light emitted from each laser interferometer 80 and the laser light reflected by the movable mirror 79. It has become.
  • a light transmitting system 81 and a light receiving system 82 arranged similarly so as to sandwich the end of the projection optical system 71 in the column chamber 78.
  • a pair of oblique incidence type focus detection systems 83 composed of Then, a light beam to which the photoresist is not exposed is radiated from the light transmitting system 81 to the surface of the wafer W held on the wafer stage WST, and reflected light from the surface of the wafer W is received by the light receiving system 81.
  • the position of the surface of the wafer W in the Z-axis direction and the inclination of the projection optical system 71 with respect to the optical axis are measured.
  • the wafer loader 62 includes a wafer transfer device 84 and a wafer storage shelf 85.
  • the wafer transfer device 84 has the same configuration as the wafer transfer device 37 of the coating and developing device 11. That is, the wafer transfer device 84 includes an articulated robot 44 having a hand portion 43 at the tip for vacuum suction of the wafer W, and a slide device for moving the articulated robot 44 in the X-axis direction. 4 and 5.
  • the wafer storage shelves 85 hold wafers W loaded from the wafer delivery table 51 until they are exposed on the wafer stage WST, or wafers W exposed on the wafer stage WST are transferred to the wafer delivery table. 5 Temporarily store until transported to 1.
  • the wafer W is transferred by the wafer transfer device 84 between the wafer delivery table 51 of the interface device 13 and the wafer storage shelf 85 via the second opening 26. Further, a third opening 86 provided in a partition wall 75 between the main body chamber 65 and the first transfer chamber 66 between the wafer storage shelf 85 and the wafer stage WST of the exposure apparatus main body 61. The wafer W is transferred through a fourth opening 87 provided in the first column 75 between the main chamber 65 and the column chamber 78.
  • the reticle loader 63 includes a reticle transport device 88 and a reticle storage shelf 89.
  • the reticle transfer device 88 has the same configuration as the wafer transfer device 37 of the coating and developing device 11. That is, the reticle transport device 88 is composed of a multi-joint robot having a hand at the tip for vacuum suction of the reticle R, and a slide device for moving the multi-joint robot in the X-axis direction. I have.
  • the reticle transfer device 88 transfers a reticle selected from the plurality of reticles R stored in the reticle storage shelf 89 according to the exposure condition to the main body chamber 65 and the second transfer chamber 67. Is transported onto the reticle stage RST through the fifth opening 90 provided in the partition wall.
  • the reticle R is accommodated in the reticle case through a reticle loading / unloading opening 96 provided in a partition wall between the clean room 14 and the second transfer chamber 67. It is carried into the transfer chamber 67.
  • Reticle storage shelves 8 9 Stored in each case. Then, reticle transport device 84 takes out or stores reticle R from the reticle case. Reticle carry-in-The opening 96 for carrying out is closed by the opening / closing door 97 except when carrying in / out the reticle case.
  • the air conditioner 64 receives air in the clean room 14 through a chemical filter 91 disposed in a partition opposite to the partition provided with the second opening 26 of the chamber 22. It has become.
  • the air conditioner 64 adjusts the air taken in by the compressor therein to a predetermined temperature and humidity, and supplies the air to the column via the i-th clean air supply passage 92 and the chemical filter 93, respectively.
  • the clean air is supplied to the chamber 78 through the second purified air supply passage 94 and the chemical filter 95 to the main body chamber 65 and the second transfer chamber 67. Clean air is supplied to the first transfer chamber 66 via the second transfer chamber 67.
  • the supply amount (air volume) of the clean air to the column chamber 78, the main body chamber 65, and the second transfer chamber 67 depends on the pressure inside the column chamber 78, the main body chamber 65, and the second transfer chamber. It is adjusted to be lower in the order of 67. That is, the internal pressures of these are controlled so as to satisfy the relationship of the column chamber 78> the main body chamber 65> the second transfer chamber 67. Further, the column chamber 78 and the main body chamber 65 communicate with each other through the fourth opening 87, the main body chamber 65 and the second transfer chamber 67 communicate with each other through the fifth opening 90, 65 and the first transfer chamber 66 communicate with each other through the third opening 86.
  • the second transfer chamber 67 and the first transfer chamber 66 are communicated with each other such that the internal pressures thereof are substantially equal or the first transfer chamber 66 is slightly lower.
  • a predetermined amount of clean air is also supplied from the air conditioner 38 to the unit room 39 of the coating and developing device 11 as described above.
  • the pressures in the column room 78, main unit room 65, first and second transfer rooms 65, 67, and unit room 39 of the coating and developing device 11 should be higher than the pressure in the clean room 14. Supplied from the air conditioner 3 8 and the air conditioner 6 4 Controlled by the amount of clean air generated.
  • the air in the delivery room 53 of the interface device 13 is constantly discharged to the floor 54 of the clean room 14 by the blower 52, and the first transfer room 66 and the The pressure in the unit chamber 39 of the coating and developing apparatus 11 is negative.
  • the delivery chamber 53 is maintained at a lower pressure than any of the column chamber 78, the main body chamber 65, the transfer chambers 66, 67, and the unit chamber 39. I have.
  • HMDS hexamethyldisilazane
  • resist resist
  • rinse solution There are a developer and a stripper.
  • HMDS substances include trimethylsilanol and hexamethyldisiloxane
  • the substance of the resist or rinse solution include butyl acetate, 1-methoxy-2-propanol, and ethyl lactate.
  • the material of the developer or the stripper include methoxypropyl acetate, 2-ethoxyxetyl acetate, N-methyl-2-pyrrolidone (NMP), and the like.
  • NMP N-methyl-2-pyrrolidone
  • acetone, ethanol, etc. in addition to the above substances.
  • the following operation is performed in order to prevent these substances from being mixed into the exposure apparatus 12 and fogging the optical elements such as lenses constituting the exposure apparatus 12.
  • the carry-out door 41 for the carrier 21 in the chamber 21 is opened, and the wafer carrier storing a plurality of wafers W on the carrier mounting table of the carry-in unit 31 is opened. Place.
  • one of the wafers W stored in the wafer carrier is taken out by the articulated robot 44 of the wafer transfer device 37, and is placed on the spin coater of the coater unit 33 to be suction-held. .
  • Dropping photoresist solution onto the surface of wafer W while rotating wafer W As a result, a uniform photoresist film is formed on the wafer W.
  • baking, cooling, etc. are performed as necessary.
  • the wafer W is transferred to the wafer unloading unit 35 by the articulated robot 44 and is temporarily stored.
  • the blower 52 may be operated in conjunction with the opening and closing of at least one of the shirts 25, 27. That is, when at least one of the shirts 25 and 27 is opened, the blower 52 is operated, and when both the shirts 25 and 27 are closed, the blower 52 is stopped. When the blower 52 is stopped, the blower 52 may be stopped after a predetermined time has passed since the shirts 25 and 27 were closed. By doing so, it is possible to remove the volatile chemicals from the wafer W on which the resist is applied.
  • this configuration is used when there is almost no air flow between the coating and developing device 11, the exposure device 12, and the interface device 13 except when the shirts 25 and 27 are open. Used for
  • the wafer W is opened.
  • the knit room 39 and the delivery room 53 are communicated.
  • the second opening 26 is closed by the shutter 27.
  • the air in the unit room 39 is discharged to the underfloor 54 of the clean room 14 via the delivery room 53 without flowing into the exposure apparatus 12 side.
  • the wafer W of the wafer unloading unit 35 is placed on the wafer transfer table 51 of the interface unit 13 through the first opening 24 by the wafer transport unit 37 of the coating and developing apparatus 11. Will be moved.
  • the shirt 25 is closed.
  • the delivery chamber 53 is shut off from both the unit chamber 39 of the coating and developing apparatus 11 and the first transfer chamber 67 of the exposure apparatus 12.
  • the air force S in the delivery room 53 is discharged to the floor 54 of the clean room 14 for a predetermined time.
  • the wafer delivery table 51 is raised and lowered by the lifting device, and the wafer W is moved to the height of the wafer transfer device 84 of the exposure device 12 (for example, the articulated robot of the wafer transfer device 84).
  • the hand part 43 of 4 corresponds to the position where the wafer W can be delivered to the delivery table 51). Then, as shown in FIG. 3, in order to transfer the wafer W between the exposure apparatus 12 and the interface apparatus 13, a shutter 27 for opening the wafer W through the second opening 26 opens. Then, the first transfer chamber 66 and the delivery chamber 53 are communicated. At that time, the first opening 24 is closed by the shirt 25. As a result, the air in the first transfer room 66 flows into the transfer room 53 ⁇ , and further below the floor of the clean room 14
  • the hand unit 43 of the articulated robot 44 of the wafer transfer device 84 of the exposure apparatus 12 is positioned below the wafer W, and the wafer transfer table 51 is released to release the suction of the wafer transfer table 51. And the wafer W is transferred to the articulated robot 44 of the wafer transfer device 84. Then, the wafer W is transferred to the wafer storage shelf 85 and temporarily stored by the wafer transfer device 84.
  • Wafer W temporarily stored in wafer storage shelf 85 is transferred by wafer transfer device 84 onto wafer holder 74 on wafer stage WST. And wafer transfer The multi-joint robot 44 of the transfer device 84 is evacuated (moved toward the interface device 13 to carry in the next wafer W), and the wafer W is held on the wafer holder 74 by vacuum suction. .
  • the wafer stage WST is driven to move the wafer W to the projection position of the projection optical system 71.
  • a predetermined laser beam is emitted from the laser interferometer 80 toward the opposing moving mirror 79, and interferes with the reflected light from the moving mirror to make the X-axis direction and the Y-axis direction of the wafer W. Measure the position of.
  • a predetermined light beam is emitted from the light transmitting system 81 of the focus detection system 83 to the surface of the wafer W, and the light reflected on the surface of the wafer W is received by the light receiving system 82, and the surface of the wafer W is received. Detects the position in the Z-axis direction.
  • the exposure apparatus body 61 is a step-and-scan type exposure apparatus in which the reticle R and the wafer W are synchronously moved with respect to the projection optical system 71 and successive exposures are sequentially controlled. .
  • the vacuum suction of the wafer holder 74 is released, and the wafer holder 74 is suction-held by the hand unit 43 of the articulated robot 44.
  • the wafer W sucked and held by the hand unit 43 waits for the shutter 27 to be opened in the wafer storage shelf 85, and then the wafer is transferred to the interface device 13 via the second opening 26.
  • the table is transported to 51. At this time, the first opening 24 is closed by the shirt 25.
  • the suction holding of the hand section 43 of the articulated robot 44 is released, the wafer transfer table 51 is raised, the wafer W is transferred to the wafer transfer table 51, and the articulated robot 44 is moved. Evacuate (move toward exposure unit 61 to carry out next wafer W).
  • the wafer W on the wafer transfer table 5 1 waits for the shirt 25 to be opened, and then, through the first opening 24, is transferred to the coating and developing apparatus 1 1 by the wafer transfer device 37 of the coating and developing apparatus 11.
  • the wafer is transferred to the wafer loading unit 36.
  • the second opening 26 is closed by the shutter 27.
  • the wafer to the wafer carry-in unit 36 When the transfer of W is completed, the first opening 24 is also closed by the shirt 25.
  • the shutters 25 and 27 are closed and the delivery chamber 53 is moved to the first transfer chamber 66 of the exposure apparatus 12 and the coating and developing apparatus 1. Cut off from unit room 39 of unit 1. Then, in this state, the air in the delivery room 53 may be discharged to the underfloor 54 of the clean room 14 for a predetermined time.
  • the reticle is transferred onto the spin developer of the developer unit 34 by the wafer transfer device 37 of the coating and developing device 11, and is exposed and transferred by being sprayed with the developer while being rotated or vibrated.
  • the image of the pattern on R is developed.
  • the developed wafer W is stored in the wafer carrier on the carrier mounting table of the carrier carry-out unit 32 by the wafer transfer device 37.
  • the wafer W after development may be stored on the carrier carrier shelf on the carrier mounting table of the carrier carry-in unit 31 by the wafer transfer device 37. Note that baking and cooling are performed on the wafers before and after the development as necessary.
  • the internal pressure of the unit chamber 39 of the interface device 13 is lower than the internal pressure of the coating and developing device 11 and the internal pressure of each of the chambers in the exposure device 12 and the clean room 14 has a lower internal pressure. It is set higher than the pressure.
  • the air inside the two devices 11 and 12 is supplied to the interface device 13 that connects the coating and developing device 11 and the exposure device 12 with the two devices 11 and 1.
  • a blower 52 is provided below the floor 54 of the clean room 14 where 2 is installed.
  • the air inside the coating and developing device 11 and the exposure device 12 is reliably discharged to the underfloor 54 of the clean room 14 via the interface device 13.
  • gaseous or mist-like chemicals used in the coating or developing process of the photo resist on the wafer W and drifting inside the coating and developing apparatus 11 are brought into the clean room by the flow of air. It is discharged to the underfloor of 14-4. Therefore, the intrusion of chemicals and the like from the coating and developing apparatus 11 to the exposure apparatus 12 is suppressed without increasing the pressure in the exposure apparatus 12 as compared with the pressure in the coating and developing apparatus 11 as in the conventional configuration. Is done. Further, contamination of many optical elements provided in the exposure apparatus 12 can be suppressed.
  • the pressure inside the exposure apparatus 12 can be set to a substantially constant condition at a lower pressure than that of the conventional configuration, and the column chamber 78, the main body chamber 65, and the main chamber 65 in the exposure apparatus 12 can be set.
  • the supply amount of clean air to the two transfer chambers 66, 67 can be kept lower. As a result, there is no need to operate the compressor in the air conditioner 64 of the exposure apparatus 12 at high speed or to increase the size of the air conditioner 64.
  • the vibration applied to the exposure apparatus main body 61 does not increase.
  • the turbulence of the air flow in the column chamber 78 is suppressed, and it is possible to avoid the fluctuation that hinders the accurate measurement of the position of the wafer W in the laser interferometer 80 and the focus detection system 83. it can. Therefore, accurate exposure operation in the exposure apparatus main body 61 can be ensured in addition to the above-described effect of suppressing contamination of the optical element.
  • gaseous or mist-like chemicals inert gas leaking from the lens barrel containing the projection optical system 71, illumination optical system 77, etc., and gas such as ozone generated by exposure to exposure light, It is not released from the coating and developing device 11 or the exposure device 12 into the clean room 14. Therefore, contamination of the working environment in the clean room 14 can be suppressed.
  • the interior of the exposure apparatus 12 includes a column chamber 78 for accommodating the wafer stage WST and the end of the projection optical system 71 on the wafer W side, and an illumination optical system 77. And a first transfer chamber 66 for accommodating a wafer loader 62, and a main chamber 65 for accommodating the projection optical system 71 and an end of the projection optical system 71 on the reticle R side. And The supply amount of clean air to each of the chambers 78, 65, 66 is set so that the pressure inside the column chamber 78, the main body chamber 65, and the first transfer chamber 66 decreases in this order. .
  • an air flow is formed from the column chamber 78 to the main body chamber 65 and from the main body chamber 65 to the first transfer chamber 66.
  • the required cleanliness and temperature control accuracy are highest in the column chamber 78, then in the main body chamber 65, and then in the first transfer chamber 66. I have.
  • the air flow is ensured from a portion where the required cleanliness and temperature control accuracy are high to a portion where the accuracy is low.
  • the cleanliness and temperature control accuracy required for each of the chambers 78, 65, and 66 are ensured, and the wafer stage WS, reticle stage RST, and wafer transfer device 84 are provided inside them.
  • high control accuracy of an operation system such as the wafer loader 62 or a measurement system such as the laser interferometer 80 and the focus detection system 83 can be secured.
  • high cost performance of the projection optical system 71 and the illumination optical system 77 can be secured.
  • the pressure inside 53 is set to be lower than the pressure in any one of the unit chamber 39 of the coating and developing apparatus 11 and the first transfer chamber 66 of the exposure apparatus 12.
  • the air in 6 6 surely flows into the transfer room 53 of the interface device 13, and is discharged to the underfloor 54 of the clean room 14 by the blower 52.
  • shirts 25 and 27 are provided to open and close the first opening 24 and the second opening 26 of the interface device 13 respectively.
  • the interface device 13 When the wafer W passes through the interface device 13, The wafers W can be transferred by opening the cutters 25 and 27 one by one. As a result, when the wafer W is transferred, the unit chamber 39 of the coating and developing apparatus 11 and the first transfer chamber 66 of the exposure apparatus 12 are connected to the transfer chamber 53 of the interface apparatus 13. No communication through
  • the wafer W coated with the resist is placed on the wafer delivery table 51 in the delivery chamber 53, and the first opening 24 and the second opening 26 are connected. In the closed state, the air in the delivery room 53 is discharged to the underfloor 54 of the clean room 14 for a predetermined time.
  • the chemicals volatilizing from the resist-coated wafer W can be sufficiently removed before the wafer W is carried into the exposure apparatus 12, and the chemicals in the exposure apparatus 12 can be removed.
  • the degree of cleanliness can be kept higher.
  • the interface device 13 is stored in the power exposure device 12. That is, a delivery chamber 53 is defined on the side of the first transport chamber 66 of the exposure apparatus 12 connected to the coating and developing apparatus 11.
  • the first opening 24 that communicates the delivery chamber 53 with the unit chamber 39 of the coating and developing device 11 is a second opening that communicates the delivery chamber 53 with the first transfer chamber 66 by the shutter 25.
  • the shutter 26 is opened and closed by a shutter 27.
  • the wafer W is directly transferred between the two hand units 43 between the wafer transfer device 37 of the coating and developing device 11 and the wafer loader 62 of the exposure device 12. It has become.
  • the first opening 24 and the second opening 26 are both closed shirts 25, It is made to be closed by 27.
  • the wafer transfer device 84 of the wafer loader 62 is equipped with a wafer W elevating function. This makes it possible to absorb differences in design specifications while ensuring the independence of the coating and developing apparatus 11 and the exposure apparatus 12.
  • an exhaust passage 98 communicating between the delivery room 53 of the exposure apparatus 12 and the floor 54 of the clean room 14 is provided so as to extend below the floor 54.
  • a blower 52 is provided at an extended portion of the exhaust passage 98 below the floor 54. The blower 52 discharges the air in the delivery room 53 to the floor 54 below the clean room 14 irrespective of the opening and closing of both shirts 25, 27.
  • the shutters 25 and 27 are simultaneously opened for a short time.
  • the discharge capacity of the blower 52 is controlled so as to keep the pressure in the delivery chamber 53 lower than that of any of the unit chamber 39 and the first transfer chamber 66. For this reason, the air in the unit chamber 39 of the coating and developing apparatus 11 does not flow into the first transfer chamber 66 when the shirt 25 is opened, but flows through the exhaust passage 98 to the clean room 1. It is discharged to the floor below the floor.
  • the wafer W is directly transferred between the hand unit 43 between the wafer transfer device 37 of the coating and developing device 11 and the wafer loader 62 of the exposure device 12.
  • the processing may be performed via the wafer delivery table 51 as in the first embodiment. Therefore, according to the present embodiment, the following effects can be obtained in addition to the effects substantially similar to the effects (1) to (2) in the first embodiment.
  • the wafer loader 62 also plays the role of the interface device 13 of the first embodiment.
  • the configuration of the exposure system can be greatly simplified, and the size of the entire exposure system can be reduced.
  • the blower 52 for discharging the air in the first transfer chamber 66 to the floor 54 below the clean room 14 is provided with an exhaust air independent of the exposure apparatus 12.
  • the passage 98 is provided in a portion extending below the floor 54.
  • the vibration caused by the rotation of the blower 52 is not easily transmitted to the exposure apparatus main body 61, and a more accurate exposure operation in the exposure apparatus 12 can be secured.
  • an interface device 13 such as a wafer delivery table 51 is built in the coating and developing device 11. That is, a delivery room 53 is defined on the side of the coating developing device 11 connected to the exposure device 12 in the unit room 39.
  • the first opening 24 that connects the delivery room 53 and the unit room 39 is a second opening that connects the delivery room 53 and the first transfer chamber 66 of the exposure apparatus 12 with the shirt 25. 26 is opened and closed by a shirt 27.
  • the air in the delivery room 53, the first transfer room 66, and the unit room 39 is discharged to the floor of the clean room 14 by the blower 52, but the delivery room 53 is a factory. It is also possible to connect to a duct communicating with the exhaust air and discharge the air inside the first transfer chamber 66 and the unit chamber 39 through the delivery chamber 53.
  • the shirts 25 and 27 in each embodiment may be omitted.
  • the discharge capacity of the blower 52 should be kept lower than that of the unit chamber 39 of the coating / developing device 11 and the first transfer chamber 66 of the exposure device 12 by keeping the pressure in the delivery chamber 53. You need to control.
  • a shirt may be provided in each of the third opening 86, the fourth opening 87, and the fifth opening 90.
  • the fourth opening 87 is opened when the wafer W is transferred, and the fourth opening 87 is closed when the wafer W is not transferred.
  • Moyore, D also when transferring the wafer W between the first transfer chamber 6 6 and the body chamber 6 5 opens the third opening 8 6, a third opening 8 6 when not transporting the wafer W You can keep it closed.
  • the fifth opening 90 is opened, and when the reticle R is not transferred, the fifth opening 90 is closed. You may.
  • the gas supplied into the chambers 21 to 23 has been described by taking air in a clean room as an example, but is not limited to this.
  • a configuration in which the purified air is supplied from a stored cylinder via a supply pipe may be employed. At that time, it is possible to supply clean air from a cylinder to the coating and developing device 11, the developing device or the developing device, and the exposure device 12.
  • an inert gas such as a nitrogen gas or a helium into each of the chambers 21 to 23. Good.
  • the coating and developing device 11 in which the coating device having the coater unit 33 and the developing device having the developer unit are accommodated in a single chamber 21 is disposed adjacent to the exposure device 12.
  • the coating device and the developing device may be housed in independent chambers, for example, the coating device may be arranged on one side of the exposure device 12 and the developing device on the other side.
  • the exposure device 12, the coating device, and the developing device may be connected by the interface device 13 of each embodiment.
  • the interface device 13 detects the pressure in the coating and developing device 11 (unit chamber 39) and the exposure device 12 (first transfer chamber 66), and based on the detection result, A pressure adjusting device for setting the pressure in the delivery chamber 53 low may be provided.
  • a pressure detection sensor for detecting the pressure in the coating developing device 11 and the exposing device 12 may be provided.
  • the coater unit 33 and the developer bar unit 34 are equipped with a spin type coater and a developer.
  • the coater and the developer bar may be equipped with a dip type, a spray type or the like. Good.
  • the exposure light emitted from the illumination optical system 7 7 for example, K r F excimer, single laser light, A r F excimer one laser light, is adopted F 2 excimer laser beam or the like
  • exposure As light continuous light in the visible or ultraviolet region such as g-line, h-line, and i-line may be employed. In this case, it is not necessary to fill the inside of the lens barrel that houses the projection optical system 71 or the illumination optical system 77 with an inert gas.
  • a single-wavelength laser in the infrared or visible range oscillated by a DFB semiconductor laser or fiber laser is amplified by, for example, a fiber amplifier doped with erbium (or both erbium and yttrium), and is non-linear.
  • a harmonic converted to ultraviolet light using an optical crystal may be used.
  • a refractive optical element may be employed, a reflective system including only a reflective optical element, or a catadioptric system having a reflective optical element and a refractive optical element ( Force dioptric system).
  • a catadioptric system having a concave mirror or the like can be used as a catoptric element without using a beam splitter.
  • an exposure system having a so-called step-and-scan type scanning exposure apparatus for manufacturing a semiconductor device has been described as an example.
  • the present invention may be embodied in an exposure system for manufacturing a micro device such as the above, or for manufacturing a mask such as a reticle and a photomask.
  • a batch exposure type exposure apparatus, a contact type exposure apparatus, and a proximity type exposure apparatus The present invention may be embodied as an optical device, a mirror projection type exposure device, or the like. Even in this case, substantially the same effects as in the above embodiments can be obtained.
  • the coating and developing apparatus 11, the exposure apparatus 12 and the interface apparatus 13 of each embodiment are mechanically constructed by the respective elements constituting the apparatuses 11 to 13 in order to achieve the above-mentioned functions. It is assembled by combining (including piping) and electrically (including wiring).
  • the exposure apparatus 12 is constructed such that each element is optically coupled (including optical adjustment). It is desirable that the production of the coating and developing apparatus 11, the exposure apparatus 12, and the interface apparatus 13 be performed in a clean room in which temperature, cleanliness, and the like are controlled.
  • the exposure system, the exposure apparatus, the coating apparatus, the image processing apparatus, and the substrate processing environment control method in the exposure system according to the present invention can avoid cumbersome adjustment for each apparatus and increase in size of each apparatus.
  • an accurate exposure operation can be realized.
  • pollutants are not released into the first space, so that deterioration of the environment of the first space can be suppressed.
  • the required cleanliness and temperature control accuracy for each room in the exposure apparatus can be ensured, and the operating system and the measurement system provided in each room can be maintained at a high level and control accuracy.
  • the intrusion of contaminants into the exposure apparatus can be suppressed more reliably.

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Abstract

La présente invention concerne un système d'exposition, un dispositif d'exposition, un dispositif d'application, un dispositif de développement, et un procédé de régulation de l'environnement de traitement de plaquette dans le système d'exposition utilisé à l'étape de photolithogravure dans le processus de fabrication d'un microdispositif, d'un masque, ou analogue. Un dispositif d'application/développement (11) et un dispositif d'exposition (12) sont connecté par un dispositif d'interface (13). Ce dispositif d'interface (13) comporte une soufflante (52) servant à expulser l'air de sa chambre de transfert (53) dans le faux plancher (54) d'une salle blanche (14). L'air d'une chambre de l'unité (39) du dispositif d'application/développement (11) et de chacune des chambres (65, 66, 67, 78) du dispositif d'exposition (12) est expulsé vers le faux plancher (54) via la chambre de transfert (53). Il en résulte que la pression des chambres (65, 66, 67, 78) du dispositif d'exposition (12) ne remonte pas à un niveau supérieur à celui de la chambre de l'unité (39), ce qui fait que les divers produits chimiques provenant du dispositif d'application/développement (11) ne pénètrent pas dans le dispositif d'exposition (12). Pour cette raison, une mesure précise peut être réalisée tout en évitant les délicats réglages de pression des dispositifs (11, 12, 13) et sans augmenter leurs dimensions.
PCT/JP1999/005026 1999-09-14 1999-09-14 Systeme d'exposition, dispositif d'exposition, dispositif d'application, dispositif de developpement, et procede de regulation de l'environnement de traitement de plaquette dans le systeme d'exposition WO2001020650A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP1999/005026 WO2001020650A1 (fr) 1999-09-14 1999-09-14 Systeme d'exposition, dispositif d'exposition, dispositif d'application, dispositif de developpement, et procede de regulation de l'environnement de traitement de plaquette dans le systeme d'exposition
AU56513/99A AU5651399A (en) 1999-09-14 1999-09-14 Exposure system, exposure device, application device, development device, and method of controlling wafer treating environment in the exposure system
TW088116365A TW430877B (en) 1999-09-14 1999-09-23 Exposure system, exposure device, application device, development device, and method of controlling wafer treating environment in the exposure system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1999/005026 WO2001020650A1 (fr) 1999-09-14 1999-09-14 Systeme d'exposition, dispositif d'exposition, dispositif d'application, dispositif de developpement, et procede de regulation de l'environnement de traitement de plaquette dans le systeme d'exposition

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Cited By (6)

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Publication number Priority date Publication date Assignee Title
EP1457832A1 (fr) * 2003-03-11 2004-09-15 ASML Netherlands B.V. Ensemble de projection lithographique, sas de chargement et méthode de transfert d'objets
JP2006196632A (ja) * 2005-01-13 2006-07-27 Nec Electronics Corp 露光装置
JP2006286709A (ja) * 2005-03-31 2006-10-19 Toppan Printing Co Ltd 露光装置及び露光装置を用いたフォトレジストパターン形成方法
US7359031B2 (en) 2003-03-11 2008-04-15 Asml Netherlands B.V. Lithographic projection assembly, load lock and method for transferring objects
CN102854755A (zh) * 2003-07-09 2013-01-02 株式会社尼康 曝光装置
US8425226B2 (en) 2007-06-28 2013-04-23 Fujitsu Semiconductor Limited Heat treatment apparatus and method of manufacturing semiconductor device

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Publication number Priority date Publication date Assignee Title
TW594835B (en) 2000-05-09 2004-06-21 Tokyo Electron Ltd System for coating and developing
CN113721429A (zh) * 2021-09-10 2021-11-30 大连理工大学 一种无掩模光刻系统及其对应的光刻方法

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Publication number Priority date Publication date Assignee Title
JPS6079358A (ja) * 1983-10-07 1985-05-07 Nippon Kogaku Kk <Nikon> 投影光学装置
JPH0590133A (ja) * 1991-09-27 1993-04-09 Matsushita Electric Ind Co Ltd Ｘ線露光装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079358A (ja) * 1983-10-07 1985-05-07 Nippon Kogaku Kk <Nikon> 投影光学装置
JPH0590133A (ja) * 1991-09-27 1993-04-09 Matsushita Electric Ind Co Ltd Ｘ線露光装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1457832A1 (fr) * 2003-03-11 2004-09-15 ASML Netherlands B.V. Ensemble de projection lithographique, sas de chargement et méthode de transfert d'objets
US7359031B2 (en) 2003-03-11 2008-04-15 Asml Netherlands B.V. Lithographic projection assembly, load lock and method for transferring objects
US7878755B2 (en) 2003-03-11 2011-02-01 Asml Netherlands B.V. Load lock and method for transferring objects
CN102854755A (zh) * 2003-07-09 2013-01-02 株式会社尼康 曝光装置
JP2006196632A (ja) * 2005-01-13 2006-07-27 Nec Electronics Corp 露光装置
JP2006286709A (ja) * 2005-03-31 2006-10-19 Toppan Printing Co Ltd 露光装置及び露光装置を用いたフォトレジストパターン形成方法
US8425226B2 (en) 2007-06-28 2013-04-23 Fujitsu Semiconductor Limited Heat treatment apparatus and method of manufacturing semiconductor device
US8889432B2 (en) 2007-06-28 2014-11-18 Fujitsu Semiconductor Limited Heat treatment apparatus and method of manufacturing semiconductor device

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AU5651399A (en) 2001-04-17

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