WO2000074120A1 - Procede et appareil d'exposition - Google Patents
Procede et appareil d'exposition Download PDFInfo
- Publication number
- WO2000074120A1 WO2000074120A1 PCT/JP2000/003389 JP0003389W WO0074120A1 WO 2000074120 A1 WO2000074120 A1 WO 2000074120A1 JP 0003389 W JP0003389 W JP 0003389W WO 0074120 A1 WO0074120 A1 WO 0074120A1
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- WO
- WIPO (PCT)
- Prior art keywords
- exposure
- gas
- chamber
- exposure apparatus
- exposure beam
- Prior art date
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
Definitions
- the present invention relates to a device for manufacturing a device such as a semiconductor device, an imaging device (CCD, etc.), a liquid crystal display device, a plasma display device, or a thin-film magnetic head.
- a device for manufacturing a device such as a semiconductor device, an imaging device (CCD, etc.), a liquid crystal display device, a plasma display device, or a thin-film magnetic head.
- Exposure apparatus used to transfer a mask pattern onto a substrate during lithography, especially when using an exposure beam in the vacuum ultraviolet region (VUV) with a wavelength of about 200 nm or less. It is suitable.
- VUV vacuum ultraviolet region
- a wafer stage unit, a reticle stage unit, a projection optical system unit, and an illumination optical system unit are mechanically integrated integrally with each other.
- the structure integrally connected in this way was supported on the floor via a vibration isolating structure.
- a measurement system for measuring the position of the movable part of each stage with reference to the projection optical system was also attached to a part of the integrated structure.
- a projection exposure apparatus it is also required to improve the throughput by increasing the illuminance of the exposure beam.
- the exposure beam is shortened, the exposure beam generated by a gas (atmosphere) on the optical path is required. Absorption gradually increases. That is, when the wavelength of the exposure beam is in the vacuum ultraviolet region (VUV) of about 200 nm or less, such as ArF excimer laser light, oxygen, water vapor, The absorption of the exposure beam by a substance such as carbon dioxide (hereinafter referred to as “absorbing substance”) increases, and the absorption amount becomes particularly large when the wavelength becomes 180 nm or less.
- VUV vacuum ultraviolet region
- absorbing substance a substance such as carbon dioxide
- the stage, the projection optical system, and the measurement system are integrally connected, so that the vibration of the movable part in the stage is directly transmitted to the measurement system, and the stage control is performed.
- the vibration of the movable part in the stage is directly transmitted to the measurement system, and the stage control is performed.
- the movement of the movable part caused deformation of a part of the measurement system, which could cause measurement errors, albeit very slight.
- vacuum ultraviolet light such as ArF excimer laser light is used as the exposure light, it is necessary to purge most of the optical path of the exposure light with nitrogen or the like. It was not easy to make a good airtight structure at the boundary between the stage and the projection optical system.
- a first object of the present invention is to provide an exposure method capable of improving the control accuracy of a movable portion of a stage.
- the present invention is directed to a second aspect of the present invention in which when a gas having a high transmittance is supplied to at least a part of the optical path of the exposure beam, the mixing of an external gas is reduced. Aim.
- a fourth object of the present invention is to provide an exposure apparatus that can use such an exposure method.
- a fifth object of the present invention is to provide a method for manufacturing such an exposure apparatus, and a method for manufacturing a device capable of manufacturing a highly accurate device using such an exposure apparatus or the exposure apparatus.
- Disclosure of the invention A first exposure method according to the present invention illuminates a first object (R) with an exposure beam, and exposes a second object (W) via a projection system (PL) with an exposure beam having passed the pattern of the first object.
- vibration is transmitted between the first stage system (63) for positioning the first object, the projection system, and the second stage system (64) for positioning the second object. We support it as difficult.
- a first exposure apparatus illuminates a first object (R) with an exposure beam from an illumination system (62), and projects a projection system with an exposure beam passing through the pattern of the first object.
- the first exposure method of the present invention can be used.
- the projection system has a structure in which the internal optical member is substantially sealed, and the first chamber (6) surrounding the optical member on the first object side of the illumination system, and the first stage system.
- Flexible to seal It is desirable to provide a connecting member (25, 36, 43) having a property. This makes it difficult for external gas to enter the optical path of the exposure beam at the boundary between the chambers or the like, so that the optical member is less clouded.
- the exposure beam is vacuum ultraviolet light having a wavelength of 200 nm or less
- the exposure beam is placed on an optical path inside the first chamber, the second chamber, the projection system, and the third chamber, respectively. It is desirable to supply a gas permeable to the exposure beam.
- the boundary portion is a connecting member having flexibility, a decrease in purity of the gas is suppressed, so that the transmittance of the exposure beam is kept high.
- a second exposure method provides an exposure method for exposing an object (R, W) with an exposure beam, wherein the object (R, W) is adjacent to at least a part of an optical path of the exposure beam and at least a part of a transport path of the object
- two airtight chambers (108, 104) are provided, each of which substantially isolates the internal space from the outside air, and gas that transmits the exposure beam is supplied to the two adjacent airtight chambers.
- the space between two adjacent airtight chambers is substantially sealed by a covering member (101B) formed of a flexible film-like material.
- the light amount of the exposure beam can be kept high, and the covering member has flexibility. Even if vibration occurs in one of the hermetic chambers, the vibration is not transmitted to the other hermetic chamber. Therefore, for example, even if vibrations are generated by moving the object, the vibrations are not transmitted to the projection optical system or the like, and the imaging characteristics are not deteriorated, so that highly accurate exposure can be performed.
- a second exposure apparatus is an exposure apparatus that exposes an object (R, W) with an exposure beam.
- two airtight chambers (108, 104), which are arranged adjacent to at least a part of the transport path of the airtight chamber, respectively, and substantially isolate the internal space from the outside air.
- a covering member (101B) provided so as to substantially seal the space between the two airtight chambers.
- a third exposure apparatus is an apparatus for exposing a second object (W) with an exposure beam through a first object (R), the apparatus being adjacent to at least a part of the first object on a conveyance path.
- Two airtight chambers (108, 117) that are arranged so as to substantially isolate the internal space from the outside air, and the exhaust of the gas in these two airtight chambers, and the A gas supply mechanism (113) for supplying gas passing through the exposure beam, and a space between two adjacent airtight chambers formed of a flexible film-like material.
- a covering member (118 A) provided so as to substantially seal the air.
- the second exposure method of the present invention can be performed.
- the connecting member or the covering member may include a thin film of a first material (ethylene / vinyl / alcohol, polyamide, polyimide, polyester, or the like) having a good gas barrier property. Desirable. This keeps the purity of the gas passing through the exposure beam inside the hermetic chamber high.
- a first material ethylene / vinyl / alcohol, polyamide, polyimide, polyester, or the like
- a thin film made of a second material for example, an inorganic substance made of metal, etc.
- a second material for example, an inorganic substance made of metal, etc.
- a thin film made of a third material having good elasticity is applied to the outer surface of the first member of the connecting member or the covering member by laminating, and the connecting member or the covering member thereof is applied.
- the third material at both ends of the connecting member or the covering member may be welded to each other so as to close the open end of the cylindrical shape.
- the first material has excellent gas barrier properties, but may not have good elasticity, but this elasticity is supplemented by the third material.
- the method for manufacturing the first and second devices of the present invention includes the steps of: forming a mask pattern (R) using the second exposure method of the present invention, or the second or third exposure apparatus of the present invention, respectively.
- the process includes a step of transferring onto the substrate (W) as the object.
- the second exposure method of the present invention by using the second exposure method of the present invention or the use of the second or third exposure apparatus of the present invention, it is possible to perform exposure with high accuracy while reducing the influence of vibration. And high-performance devices can be manufactured.
- a first method for manufacturing an exposure apparatus includes illuminating a first object with an exposure beam from an illumination system, and exposing a second object via a projection system with an exposure beam having passed through the pattern of the first object.
- a method of manufacturing an exposure apparatus for exposing an illumination system, a projection system, a first stage system for positioning a first object, a second stage system for positioning a second object, and a first stage system.
- the assembly system, the projection system thereof, and the second stage system thereof are assembled independently of each other with a supporting member connected via a vibration isolation member in a predetermined positional relationship.
- the mask pattern is formed by the first exposure method or the first exposure apparatus of the present invention, respectively.
- the method includes a step of transferring onto a substrate as two objects. According to the present invention, by using the first exposure method or the first exposure apparatus of the present invention, it is possible to improve the control accuracy of the movable part of the movable part of the stage system and perform highly accurate exposure. It can manufacture high-performance devices.
- a second method for manufacturing an exposure apparatus is a method for manufacturing an exposure apparatus that exposes an object with an exposure beam, wherein the second method is adjacent to at least a part of an optical path of the exposure beam and at least a part of a transfer path of the object.
- Two hermetically sealed chambers each of which is arranged so as to substantially isolate the internal space from the outside air, exhausting the gas in the two hermetically sealed chambers, and supplying the gas that transmits the exposure beam to the hermetically sealed chambers
- the third method for manufacturing an exposure apparatus is the method for manufacturing an exposure apparatus that exposes a second object with an exposure beam via a first object, wherein at least a part of the first object on a transport path is provided.
- Two airtight chambers arranged adjacent to each other to substantially isolate the interior space from the outside air, the exhaust of the gas in the two airtight chambers, and the transmission of the exposure beam into the airtight chambers
- the assembled covering member is assembled in a predetermined positional relationship.
- FIG. 1 is a sectional view showing a schematic configuration of a projection exposure apparatus and an air conditioner according to a first embodiment of the present invention.
- Figure 2 shows the gas circulation system of the embodiment.
- FIG. 3 is a schematic configuration diagram in which a part of a system is cut away.
- FIG. 3 is a schematic configuration diagram of a projection exposure apparatus according to a second embodiment of the present invention, with a portion cut away.
- FIG. 4 is a perspective view showing the film-shaped cover 101A of FIG.
- FIG. 5 is a cross-sectional view showing the film-shaped cover 101A of FIG. 3 in an enlarged manner in the thickness direction.
- FIG. 6A is a perspective view showing another example of the film-like cover 141 according to the embodiment of the present invention, and FIG. 6B is an enlarged view of a part of the film-like cover 141 in the thickness direction.
- the present invention is applied to a step-and-scan type projection exposure apparatus in which a gas having a high transmittance is supplied to most of the optical path of an exposure beam.
- FIG. 1 shows a schematic configuration of a projection exposure apparatus and an air conditioner of the present embodiment.
- a projection exposure apparatus is installed in a clean room on a floor F1 on a certain floor of a semiconductor manufacturing plant
- An air conditioner is installed in the so-called machine room (utility space) on the floor F2 of the building to supply temperature-controlled air around the projection exposure apparatus on the floor.
- a gas circulation device (see Fig. 2) that circulates gas with high transmittance in the optical path of the exposure beam of the projection exposure apparatus.
- a projection exposure apparatus comprising a reticle stage system 63, a projection optical system PL, and a wafer stage system 64 is installed.
- the light source system 61 and the illumination system 62 constitute an illumination optical system.
- columns 8A and 8B are stably fixed on the floor F1, and the upper portions of the columns 8A and 8B are connected by a ceiling plate 8C.
- the floor F 1 and the columns 8A and 8B correspond to the support members of the present invention.
- a second embodiment FIG.
- the exposure apparatus may be installed on the floor via a base member (102C), or the platen 39 on which the wafer stage system 64 is mounted may be provided with columns 8A and 8B by means of a frame or the like. It may be suspended from. In the former, the base member and column 8A, 8B force In the latter, the columns 8A, 8B correspond to the support member of the present invention.
- the light source system 61 and the illumination system 62 are housed in the highly airtight box-shaped first sub-chamber 1 and second sub-chamber 6, respectively, and the first sub-chamber 1 is vibration-isolated on the floor F1.
- the second sub-chamber 6 containing the lighting system 62 is directly fixed to the upper part of the column 8A and part of the ceiling plate 8C, which is installed via the tables 2A and 2B, and the columns 8A and 8B
- the wafer stage system 64 is installed on the floor F1 between the two via the vibration isolation tables 40A and 40B.
- the anti-vibration tables 4OA and 40B are active anti-vibration mechanisms combining, for example, an air damper and a voice coil motor (VCM) type electromagnetic damper.
- VCM voice coil motor
- the second sub-chamber 6 may be used as a housing, and the lens barrel of the illumination system 62 may be housed in this housing. It may be regarded as two sub-chambers 6 (corresponding to the first chamber of the present invention). In short, the sub-chamber is not limited to the housing.
- a support plate 32 is installed between the columns 8A and 8B above the wafer stage system 64 via vibration isolating mechanisms 35A and 35B, and is provided at an opening in the center of the support plate 32.
- the projection optical system PL is mounted.
- Columns 8A and 8B A reticle stage system 63 is installed above the projection optical system PL via anti-vibration mechanisms 24 A and 24 B.
- the vibration isolating mechanism 35A, 35B, 24A, 24B for example, an air damper or a hydraulic damper that can expand and contract in the horizontal direction can be used.
- the reticle stage system 63 as the first stage system, the projection optical system PL as the projection system, and the wafer stage system 64 as the second stage system are arranged on the floor in a state where vibrations are not easily transmitted to each other. Supported by F 1 and columns 8A, 8B. Since the illumination system 62 hardly generates vibration, there is almost no adverse effect even if it is fixed directly to the column 8A or the like. However, at least a part of the illumination system 62 may be arranged separately from the columns 8A and 8B.
- the illumination optical system is divided into two by a fixed blind 15 A described later, and the fixed blind 15 A and the optical system arranged on the reticle side are provided on the main body side (columns 8 A and 8 B), and the rest is provided. May be provided on a stand separate from columns 8A and 8B.
- the movable or replaceable optical element (for example, movable blind 15B) in the illumination optical system should be placed on another stand.
- the reticle stage system 63 and the wafer stage system 64 are housed in the highly airtight box-shaped third and fourth sub-chambers 23 and 42, respectively.
- the space between the optical members in the interior is practically sealed to form an airtight chamber.
- an ArF excimer laser (wavelength: 193 nm) is used as the exposure beam, but such vacuum ultraviolet light is greatly absorbed by oxygen, so in this example, the attenuation on the optical path is reduced.
- nitrogen gas (N 2 ) is supplied as a chemically stable gas with high transmittance on the optical path of the exposure beam.
- Helium gas (H e) can be used as a stable gas with high transmittance.
- Nitrogen gas is used in this example because nitrogen has a sufficient transmittance up to a length of about 150 nm and nitrogen is inexpensive as compared with a helium. Therefore, in this example, high-purity nitrogen gas is respectively contained in the first subchannel 1, the second subchamber 6, the third subchamber 23, and the fourth subchamber 42 by the gas circulation system described later. It is supplied (purged), and high-purity nitrogen gas is also supplied to the airtight chamber in the projection optical system PL.
- the boundary between the second sub-chamber 6 and the third sub-chamber 23, the boundary between the bottom surface of the reticle stage system 63 and the upper part of the projection optical system PL, the lower part of the projection optical system PL and the fourth sub-chamber Bellows 25, 36, 43 are attached to the boundary with 42.
- a material such as a metal
- a material coated with Teflon to prevent degassing may be used as the bellows 25, 36, 43.
- the bellows 25, 36, and 43 can be made of a material such as synthetic resin or synthetic rubber. In this case, it is preferable to apply a coating for preventing degassing. Since these bellows 25, 36, and 43 substantially seal the boundary between them, the optical path of the exposure beam is almost completely sealed. As a result, the impurity gas hardly enters the optical path of the exposure beam from the outside, and the attenuation of the exposure beam is extremely low.
- a beam matching unit including an exposure light source 3 composed of an ArF excimer laser light source in a first sub-chamber 1 and a movable mirror for positionally matching an optical path with an exposure main body. 4, and a pipe 5 formed of a light-shielding material and through which an exposure beam passes.
- the ultraviolet pulse light IL having a wavelength of 193 nm as an exposure beam emitted from the exposure light source 3 reaches the second sub-chamber 6 via the inside of the BMU 4 and the pipe 5.
- the ultraviolet pulse light IL passes through a variable attenuator 9 as an optical attenuator 9 and a beam shaping optical system composed of lens systems 10A and 10B, and then becomes an optical integrator.
- the light enters the fly-eye lens 11 as a homogenizer.
- An aperture stop system 12 of an illumination system for changing illumination conditions in various ways is arranged on the exit surface of the fly-eye lens 11.
- the ultraviolet pulse light IL emitted from the fly-eye lens 11 and passing through a predetermined aperture stop in the aperture stop system 1 2 passes through the reflection mirror 13 and the condenser lens system 14 and is transmitted into the reticle blind mechanism 16.
- the movable blind 15B reduces the moving stroke of the reticle stage in the scanning direction and the width of the light-shielding band of the reticle R.
- the pulsed ultraviolet light IL shaped into a slit with the fixed blind 15 A of the reticle blind mechanism 16 passes through the reticle through the imaging lens system 17, the reflection mirror 18, and the main condenser lens system 19.
- a slit-shaped illumination area on the R circuit pattern area is irradiated with a uniform intensity distribution.
- the illumination system 62 is composed of optical members from the variable dimmer 9 to the main condenser lens system 19.
- the image of the circuit pattern in the illumination area of the reticle R is transferred to the slit-like exposure area of the resist layer on the wafer W via the projection optical system PL. .
- the exposure area is located on one shot area among a plurality of shot areas on the wafer.
- Projection optics of this example The system PL is a dioptric system (refractive system). However, since glass materials that can transmit such short-wavelength ultraviolet light are limited, the projection optical system PL is changed to a cardio dioptric system (catadioptric system) or As a reflection system, the transmittance of the ultraviolet pulse light IL at the projection optical system PL may be increased.
- the Z axis is taken parallel to the optical axis AX of the projection optical system PL, and the X axis is parallel to the plane of FIG. 1 in a plane perpendicular to the Z axis (almost horizontal in this example).
- the explanation is given taking the Y axis perpendicular to the paper.
- the reticle stage 20 can move on the reticle base 21 in the X direction (running direction) at a constant speed, and in the X and Y directions. It is mounted so that it can move slightly in the rotation direction.
- a moving mirror (not shown) is fixed to a side surface of the reticle stage 20, and a reference mirror 22 is fixed to an upper side surface of the projection optical system PL.
- a reticle interferometer main body 33 is fixed to a support plate 32 that supports the projection optical system PL, and an upper portion of the interferometer main body 33 is passed through an opening of the reticle base 21 to form a third sub-chamber 23. Has reached within.
- the opening around the interferometer main body 33 is sealed with, for example, a resin having elasticity and low degassing.
- the moving mirror of reticle stage 20 and the reference mirror 22 of projection optical system PL are irradiated with laser beams from interferometer main body 3 3, and reference mirror 2 2 (projection optical system)
- the two-dimensional position and rotation angle of the reticle stage 20 are measured with reference to PL), and the measurement results are supplied to a drive control device (not shown).
- a reticle stage system 63 is composed of the reticle stage 20 and the reticle base 21, and the interferometer main body 33 corresponds to the first measurement system.
- wafer W is held by suction on wafer holder 37, wafer holder 37 is fixed on wafer stage 38, and wafer stage 38 is placed on surface plate 39.
- the wafer stage 38 is an auto focus method By controlling the focus position (position in the Z direction) and the tilt angle of the wafer W to adjust the surface of the wafer W to the image plane of the projection optical system PL, the wafer W is scanned at a constant speed in the X direction, and X Stepping in the Y direction.
- a moving mirror (not shown) is also fixed to a side surface of the wafer stage 38, and a reference mirror 41 is fixed to a lower side surface of the projection optical system PL.
- a wafer interferometer main body 34 is fixed to a support plate 32 that supports the projection optical system PL.
- the lower part of the interferometer main body 34 is placed on a surface plate 39 in the fourth sub-chamber 42. Has reached.
- the gap between the opening of the fourth sub-chamber 42 and the interferometer main body 34 is sealed with, for example, a resin having elasticity and low degassing.
- the reference mirror 41 of the PL is irradiated with a laser beam, and the interferometer body 34 receives the two-dimensional position and the rotation angle of the wafer stage 38 with respect to the reference mirror 41 (projection optical system PL). (Including the amount of jogging, pitching, and rolling) and supplies the measurement results to a drive controller (not shown).
- the wafer stage system 64 is composed of the wafer holder 37, the wafer stage 38, the surface plate 39, and the like, and the interferometer main body 34 corresponds to the second measurement system.
- the support plate 32 has a sensor for measuring the Z-direction interval and tilt angle of the reticle base 21 with respect to the projection optical system PL, and the Z-direction interval and tilt angle of the surface plate 39 with respect to the projection optical system PL. It is desirable to provide a sensor for measuring the temperature as a measurement system.
- the reticle stage 3 is synchronized with the reticle R being scanned in the + X direction (or -X direction) at the speed Vr through the reticle stage 20 with respect to the illumination area of the ultraviolet pulse light IL.
- the wafer W is scanned in the -X direction (or + X direction) at a speed of / 3 'Vr (/ 3 is a projection magnification from the reticle R to the wafer W) with respect to the exposure area via 8.
- the scanning directions of the reticle R and the wafer W are opposite because the projection optical system PL performs reverse projection.
- the columns 8A and 8B, the portion on the reticle side of the second sub-chamber 6 in which the illumination system 62 is housed, the third sub-chamber 23, the projection optical system PL, and the fourth sub-chamber 42 Is housed in a large box-shaped chamber 7 as a whole, and the upper part of the chamber 7 is supplied with temperature-controlled air from the air conditioner 52 on the floor F2 below the floor via piping 51.
- the supplied air passes through the diffusing section 49 and is passed to a dust filter 50 such as a HEPA filter (high efficiency part iculate air-filter) and a filter 50 including a chemical filter that removes trace amounts of organic substances.
- the air passing through the fill portion 50 flows downward around the second sub-chamber 6 to the fourth sub-chamber 42 (downflow), and is exhausted from an opening (not shown) on the bottom portion of the chamber 7. Have been. Thereby, the temperature around the second sub-chamber 6 to the fourth sub-chamber 42 in this example is maintained at a substantially constant state.
- a load lock chamber 26 is provided to keep the device in a completely airtight state, and a reticle for transferring a reticle to and from a reticle library (not shown) so as to be in contact with the side of the load lock chamber 26.
- Loader system 28 is arranged.
- the reticle loader system 28 is fixed on the side surface of the column 8B and is fixed on a support plate 27 passing through the opening of the chamber 7, and a fifth sub-chamber 29 is provided so as to cover the reticle loader system 28. ing.
- Openable and closable doors are respectively installed on the surfaces of the load lock chamber 26 facing the reticle loader system 28 and the reticle stage 21, and the periphery of the load lock chamber 26 is sealed.
- the periphery is sealed to transfer the wafer between the wafer stage system 64 and the outside.
- the load lock room 44 was installed at A wafer loader system 45 for transferring a wafer to and from a transfer line (not shown) is arranged so as to be in contact with the side surface of the load lock chamber 44.
- Wafer opening system 45 is fixed on floor F 1, and a sixth sub-chamber 46 is provided so as to cover wafer loader system 45.
- the load lock chamber 4 4 is also provided with a pair of openable and closable doors. Temperature-controlled air is supplied from the air conditioner 52 downstairs to the upper portions of the fifth subchamber 29 and the sixth subchamber 48 via the piping 31 and the piping 48, respectively, and the supplied air is filled. After passing through the evening portions 30 and 47, the gas flows downward around the reticle opening system 28 and the wafer opening system 45, respectively, and is exhausted.
- the temperature-regulated air is also supplied to the periphery of the reticle loader system 28 and the Jehachi loader system 45, but the sub-chambers 29 and 46 and the sub-chambers 23 and 4 surrounding these are also provided. Mouth lock rooms 26 and 44 are located between the two. Therefore, for example, when replacing the reticle R, close the right door, store the reticle R in the load lock chamber 26, close the left and right doors, open the right door, and open the load lock chamber 26. Replace reticle R with another reticle. Then, in the load lock chamber 26 Close the left and right doors, evacuate the interior using the exhaust system described below, and then fill with nitrogen gas.
- the reticle loader system 28 prevents air from entering the third sub-chamber 23. Is done. By the same operation, the air from the wafer porter system 45 is prevented from entering the fourth sub-chamber 42. Since the load lock chambers 26 and 44 as transfer chambers are provided, the temperature-controlled air can also flow around the reticle loader system 28 and the wafer loader system 45.
- the materials of the sub-chambers 6, 23, and 42, or members disposed inside the sub-chambers, for example, a part of the interferometer main bodies 33 and 34 are made of stainless steel. It is desirable to reduce the outgassing as much as possible, for example, by using Teflon coating.
- FIG. 2 shows a gas circulation system of the projection exposure apparatus of the present embodiment.
- an exhaust device including a vacuum pump is provided on a floor F 2 below the floor F 1 where the projection exposure apparatus is installed. 5.
- Nitrogen gas recovery device 6 6 Storage device 6 7 for storing high-purity nitrogen in the form of liquid nitrogen, etc., and temperature controller 68 8 for controlling the temperature of nitrogen gas and supplying it to the outside .
- the exhaust device 65 selectively sucks gas to a vacuum state through two exhaust pipes 70 and 72, and supplies the sucked gas to the recovery device 66 via a pipe 74.
- the recovery device 66 includes a suction unit that sucks gas from the exhaust pipe 73, a separation unit that separates nitrogen gas from the gas from this suction unit and the gas collected through the pipe 74, It is composed of a storage unit that performs temporary storage, and a supply unit that supplies the stored nitrogen gas to the temperature control device 68 through the pipe 75.
- the storage device 67 supplies the stored nitrogen to the temperature control device 68 via a pipe 76 provided with a valve V22 as needed.
- the temperature controller 68 controls the temperature of the gas (here, nitrogen gas) supplied through the pipes 75 and 76, and controls the temperature of the gas supplied from the temperature controller as necessary.
- a filter section including a HEPA filter and a chemical filter that remove dust from the blown gas. The gas passing through the filter section is supplied to the air supply pipe. Is done.
- impurities (contaminants) as well as dust and moisture are removed.
- the impurities removed here adhere to the surface of each optical element of the exposure light source 3, the illumination optical system, and the projection optical system PL and cause clouding, or float in the optical path of the exposure beam.
- a substance that changes the transmittance (illuminance) or the illuminance distribution of the illumination optical system or projection optical system PL, or a substance that adheres to the surface of the JEW (resist) and deforms the pattern image after development processing. is there.
- Activated carbon filter for example, Gigasobu (trade name) manufactured by Niyu Co., Ltd.
- Zeolite filter or a combination of these filters can be used as a part of filter in filter section 7.
- the siloxane siloxane: S i —substance whose axis is the chain
- silazane silazane: S i—N chain
- the recovery device 66 and the temperature control device 68 correspond to the gas circulation device of the present invention.
- the tip of the air supply pipe 69 from the downstairs branches into a first branch pipe having a valve V1 to a seventh branch pipe having a valve V7, and the valve V
- the first branch with 1 is connected to the first subchamber 1 (light source system 6 1)
- the second branch with the valve V 2 is connected to the second subchamber 6 (illumination system 6 2)
- the third branch pipe with V3 The fourth branch pipe with valve V4 is connected to the airtight chamber of the projection optical system PL
- the fifth branch pipe with valve V5 is connected to the subchamber 23 (reticle stage system 63).
- a second branch pipe having a valve V6 and a seventh branch pipe having a valve V7 are connected to the load lock chambers 26 and 44, respectively. Therefore, the air blowing operation of the gas from the temperature control device 68 and the selective opening / closing operation of the valves V1 to V7 allow any of the airtight chambers from the first subchamber 1 to the mouth-to-lock chamber 44. It is also configured so that a gas (here, nitrogen gas) permeable to the exposure beam can be purged at any time.
- a gas here, nitrogen gas
- first sub-chamber 1 to the third sub-chamber 23, the hermetic chamber of the projection optical system PL, and the fourth sub-chamber 42 are connected to the exhaust pipe 7 via branch pipes having valves V11 to V15, respectively.
- the exhaust pipe 71 is connected to the exhaust pipes 72 and 73 via valves V 20 and V 21. Therefore, by selectively opening and closing the valves V20 and V21, the gas in the first to fourth subchambers 1 to 42 can be exhausted by the exhaust device 65 or the recovery device 66 as needed.
- the load lock chambers 26 and 44 are connected to the exhaust pipe 70 through branch pipes having valves V 16 and V 17, respectively, and selectively connect the valves V 16 and V 17.
- the gas in the load lock chambers 26 and 44 can be evacuated to a vacuum state by the evacuation device 65 as needed by appropriate opening and closing.
- a pressure sensor and an impurity sensor for detecting the concentration of impurities such as oxygen are provided in the first subchamber 1 to the load lock chamber 44, respectively. If the detection result of the impurity sensor exceeds the allowable range, after exhausting the corresponding chamber or airtight chamber, the pressure detected by the pressure sensor becomes a predetermined reference pressure (for example, atmospheric pressure). Until in the corresponding chamber or airtight chamber It is desirable to supply a permeable gas.
- the valve V20 is closed, the valve 21 is opened to start the exposure operation, and during the exposure operation, the first subchamber 1 to the fourth subchamber 42 are closed.
- the impurity concentration increases, a certain amount of gas is exhausted through the recovery device 66 in order to slightly replace the gas in the impurity concentration, and then the permeable gas is removed through the temperature control device 68. Perform a purge. By this operation, the amount of permeable gas used can be reduced, and the operating cost can be reduced.
- the reticle or wafer to be used next is stored in the load lock chamber 26 or 44, and the left and right doors are locked.
- the amount of impurities mixed into the optical path side of the exposure beam from the reticle loader system or the wafer loader system can be almost eliminated. For this reason, there is an advantage that the throughput of the exposure process hardly decreases.
- the same is applied to the first subchamber 1 to the fourth subchamber 42.
- a kind of gas that is stable and transmissive here, nitrogen gas
- nitrogen gas is supplied.
- parts that require particularly stable optical characteristics, such as in the projection optical system PL have different permeability.
- Helium gas which is a stable gas, may be supplied.
- helium gas is expensive, it has the advantage that the thermal conductivity is about six times that of nitrogen gas, so that it has excellent heat dissipation effect and that the fluctuation of the refractive index is small, so that the imaging characteristics are stable. By circulating and using the Helium gas, an increase in operating costs can be suppressed.
- the recovered nitrogen is compressed to about 100 to 200 atm by a compressor, or liquefied by a liquefier using a turbine or the like and stored in an internal cylinder. You may do it.
- the illumination optical system is housed in the second sub-chamber 6 and a part of the second sub-chamber 6 is installed in the chamber 7, but, for example, all of the second sub-chamber 6 is installed in the chamber 7. May be. In this case, the amount of impurities in the second sub-chamber 6 can be reduced.
- a single gas (nitrogen or a rare gas such as helium or neon) is supplied into each of the first subchamber 1 to the fourth subchamber 42.
- a gas in which nitrogen and helium are mixed at a predetermined ratio may be supplied.
- the mixed gas is not limited to the combination of nitrogen and helium, but may be combined with neon, hydrogen, or the like.
- a transparent and chemically stable gas provided in at least one of the first to fourth subchambers 1 to 4, the projection optical system PL, and the load lock chambers 26 and 44 and the other.
- the purity (concentration) of impurities may be varied. In addition, it is divided into three or more groups, The same kind of gas may have different purities (impurity concentrations).
- each unit such as an illumination optical system, a projection optical system, a reticle stage system, and a wafer stage system and a method of supporting the units are not limited to the above-described embodiment (FIGS. 1 and 2). Any unit may be used as long as it supports each unit so that vibrations are not easily transmitted to each other.
- the bellows 25, 36, 43 need not be provided at all of the above-mentioned connection portions, but may be provided at least at one of the connection portions. Further, when the illumination optical system or the projection optical system is housed in a plurality of hermetic chambers separately, the above-mentioned bellows may be provided at the connection portion. This is the same when the reticle loader system 28 or the wafer loader system 45 is housed in a plurality of airtight chambers.
- an optical system for example, an interferometer body 33, 34, a reticle alignment system, a wafer alignment system), a part of which is disposed outside the third subchamber 23 or the fourth subchamber 42, , An autofocus sensor, etc.
- an optical system may be provided with a bellows at the connection between the lens barrel (housing) that houses the sub-chamber. Further, a bellows may be provided at a connection portion between each of the sub-chambers, the projection optical system, and the like and a purge gas supply / exhaust pipe.
- a r F excimer one The in the exposure beam for example, K r F excimer one The (wavelength 2 4 8 nm), F 2 laser (wavelength 1 5 6 nm) , K r 2, single-tHE (wavelength 1 4 7 nm), or a r 2, single the may be used (wavelength 1 2 6 nm), etc., but the present invention to an exposure apparatus equipped with the light sources Can be applied.
- an exposure apparatus using a KrF excimer laser it is not necessary to replace the air in the projection optical system with nitrogen, helium, or the like, and the air in the KrF excimer laser light source and the illumination optical system is replaced with nitrogen. It just needs to be replaced with etc.
- an oscillation beam is used as an exposure beam, for example, at or near any of the wavelengths of 248 nm, 193 nm, and 157 nm.
- the present invention is also applicable to a case where a harmonic of a solid-state laser such as a YAG laser having a vector is used.
- the present invention is applied to a step-and-scan projection exposure apparatus using vacuum ultraviolet light as an exposure beam.
- the inside of the reticle stage system, the wafer stage system, and the projection optical system is changed.
- Each lens is housed in an airtight unit, and the space between adjacent airtight units is sealed by a bellows mechanism made of metal or the like.
- the bellows mechanism installed between the airtight units is made of metal and has high rigidity, the vibration generated when the wafer stage system and the reticle stage system are driven, and the movement of the center of gravity of those stage systems
- the deformation of the airtight unit due to (uneven load) may be transmitted to the projection optical system via the bellows mechanism, and the imaging characteristics of the projection optical system may be deteriorated.
- the influence of the vibration or the unbalanced load generated from the stage system is transmitted to a laser interferometer alignment device or the like, and the measurement accuracy may be deteriorated.
- the effects of such vibrations can be reduced to some extent by adjusting the rigidity of the bellows mechanism, but it is desirable to further reduce the effects.
- the imaging characteristics of the projection optical system due to the effects of vibration and unbalanced load generated from those loader systems In order to reduce the deterioration of the measurement accuracy of the interferometer, etc., it is sufficient to provide an anti-vibration mechanism in the reticle loader system and the wafer loader system.
- the disadvantage is that the manufacturing cost is high. Therefore, in the following second embodiment, an example in which the vibration isolation characteristics are further improved will be described.
- FIG. 3 is a schematic configuration diagram showing the projection exposure apparatus of this example.
- the projection exposure apparatus of this example uses an ArF excimer laser light source (wavelength: 193 nm) as an exposure light source. While using, other F 2 laser light source (wavelength 1 57 nm), K r 2 laser light source (wavelength 146 nm), harmonic generator of YAG, single tHE, a semiconductor laser such as a harmonic generator A light source that generates vacuum ultraviolet light (light having a wavelength of 200 nm or less in this example) can also be used.
- ArF excimer laser light source wavelength: 193 nm
- other F 2 laser light source wavelength 1 57 nm
- K r 2 laser light source wavelength 146 nm
- harmonic generator of YAG single tHE
- a semiconductor laser such as a harmonic generator
- a light source that generates vacuum ultraviolet light light having a wavelength of 200 nm or less in this example
- the present invention can be applied when the transmittance of the exposure beam is to be particularly increased. .
- the vacuum ultraviolet light is absorbed by oxygen, water vapor, hydrocarbon gases (carbon dioxide, etc.), organic substances, and halides that are present in the normal atmosphere. Since the light is largely absorbed by the substance, the concentration of the gas of these light absorbing substances (impurities) must be suppressed to about 10 to 100 ppm or less in order to prevent the exposure beam from attenuating. Therefore, in this example, the gas on the optical path of the exposure beam is converted into a gas through which the exposure beam passes, that is, nitrogen (N 2 ) gas, or helium (He), neonone (Ne), argon (Ar), krypton.
- nitrogen (N 2 ) gas or helium (He), neonone (Ne), argon (Ar), krypton.
- purge gas a gas that is chemically stable with high transmittance to an exposure beam such as a rare gas, and has a high degree of removal of light-absorbing substances ( Hereinafter, it will be referred to as “purge gas”.
- Nitrogen gas is also exposed up to a wavelength of about 150 nm even in the vacuum ultraviolet region. Although it can be used as a gas through which the beam passes (purge gas), it almost acts as a light-absorbing substance for light with a wavelength of about 150 nm or less. Therefore, it is desirable to use a rare gas as a purge gas for an exposure beam having a wavelength of about 150 nm or less.
- a rare gas is desirable from the viewpoints of stability of refractive index and high thermal conductivity. However, helium is expensive. May be used.
- the purge gas not only a single kind of gas may be supplied, but also a mixed gas such as a gas obtained by mixing nitrogen and helium at a predetermined ratio may be supplied.
- helium gas is used as the purge gas with emphasis on the stability of the refractive index (stability of the imaging characteristics) and the high thermal conductivity (high cooling effect). Therefore, for example, a high-purity purge gas is supplied to a machine room below the floor where the projection exposure apparatus of this example is installed, and to a plurality of hermetic chambers in the projection exposure apparatus and the apparatus attached thereto, An air supply / exhaust mechanism 113 is installed to collect and reuse the gas flowing through the airtight chamber.
- the main body of the projection exposure apparatus of this example is mounted on a base member 102C, and is substantially a gate including four or three legs (columns) on a base member 102C.
- the first frame 102 A of the mold is installed.
- the illumination optical system of this example is composed of an exposure light source and optical members such as an optical integrator (uniformizer or homogenizer), and the optical members except for the exposure light source are highly airtight box-shaped first sub-chambers.
- the first sub-chamber 103 is housed in the first sub-chamber 103, and is installed above the first frame 102A.
- An exposure beam (exposure light) composed of a pulse laser beam with a wavelength of 193 nm emitted from an exposure light source (not shown) of the illumination optical system is used as a mask. -Illuminates the pattern area on the bottom surface (lower surface).
- the exposure beam transmitted through the reticle R passes through a projection optical system 104 as a projection system onto a pheno ⁇ (wafer) W as a substrate to project a pattern of the reticle R at a projection magnification j3 (; 3 is 1 Z 4, 1 Z 5 etc.).
- the wafer W is, for example, a semiconductor such as silicon or a disc-shaped substrate such as SOI (silicon insulator), on which a photoresist is applied.
- the reticle R and the wafer W of the present example respectively correspond to an object to be exposed according to the present invention.
- one projection optical system 104 is used.
- a straight cylindrical catadioptric system composed of a plurality of refractive lenses arranged along the optical axis and two concave mirrors each having an opening near the optical axis, and along one optical axis It is possible to use a straight-tube-type refraction system configured by disposing a refraction lens. Further, a double-cylinder catadioptric system or the like may be used as the projection optical system 104.
- the Z axis is set parallel to the optical axis of the projection optical system 104
- the X axis is set parallel to the plane of FIG.
- the illumination area on reticle R has a slit shape elongated in the X direction, and the scanning direction of reticle R and wafer W during exposure is in the Y direction.
- the reticle stage 107 b is held on the reticle base 107 b and moves continuously in the Y direction (scanning direction) on the reticle base 107 c in a linear mode, and the reticle in the XY plane. Fine-tune the R position.
- the reticle base 107c is defined as a law of conservation of momentum in the direction opposite to the direction of movement of the reticle stage 107b on the base member 121 when the reticle stage 107b moves in the Y direction.
- Reticle stage 107 b to suppress the occurrence of vibration when moving.
- the base member 1 2 1 Through the anti-vibration members 12 A and 12 B on the four (or even three) support plates in the middle of the frame 102 A (only two are shown in Fig. 3) Supported.
- the anti-vibration members 1 2 3 A and 1 2 3 B are active anti-vibration devices that combine an air damper (or a hydraulic damper or the like) and an electromagnetic actuator such as a voice coil motor. It is.
- a reticle stage system RST is composed of a reticle holder 107 a, a reticle stage 107 b, a reticle base 107 c and the like, and the reticle stage system RST is a highly airtight box-shaped second subchamber 1. 0 8 (reticle chamber).
- the anti-vibration members 124A and 124B are active vibration isolators similar to the anti-vibration members 123A and 123B.
- the laser interferometer 1 1 1 (reticle interferometer) is installed on the upper surface of the second frame 102 B, and the movable mirror installed on the laser interferometer 1 1 1 and the reticle stage 107 b.
- the position of the reticle stage 107 b (reticle R) in the X and Y directions, and the X-axis, Y-axis, and the rotation angle around the axis, if necessary, are measured by 1 and 9, and these measured values are used.
- the position and moving speed of the reticle stage 107 b are controlled by a stage control system (not shown) based on the position.
- a stage control system (not shown)
- a reticle alignment support frame 112 is installed on the second frame 102 B.
- a reticle alignment microscope (Not shown) is installed above the reticle stage 107 b of the support frame 112.
- the wafer W is placed on the sample stage 105a via a wafer holder (not shown).
- the sample stage 105 a is fixed on the XY stage 105 b, and the XY stage 105 b moves the sample stage 105 a (wafer W) on the wafer base 122 in the Y direction.
- the sample table 105a is moved stepwise in the X and Y directions as necessary.
- the sample stage 105a controls the focus position (position in the Z direction) of the wafer W, and the tilt angle around the X axis and the Y axis.
- the XY stage 105b is driven by a drive unit (not shown) of, for example, a linear motor type so as to satisfy the law of conservation of momentum, and the generation of vibration when driving the XY stage 105b is suppressed. I have.
- the wafer base 122 is connected to the base via four (or three, etc.) anti-vibration members 125 A and 125 B (only two are shown in FIG. 3).
- the anti-vibration members 125A and 125B are mounted on the member 102C, and are the same active vibration isolator as the anti-vibration members 123A and 123B.
- the wafer stage WST is composed of the sample stage 105a, the XY stage 105b, etc., and the wafer stage WST is housed in the highly airtight box-shaped third subchamber 106 (wafer chamber). Has been delivered.
- a laser interferometer 109 (wafer interferometer) is fixed to a support plate in the middle of the second frame 102B, and the side surface of the sample stage 105a is machined into a movable mirror.
- the position of the sample stage 105a (wafer W) in the X and Y directions, and the X-axis, Y-axis, and Z-axis The rotation angle of the rotation is measured, and the operation of the XY stage 105b is controlled by a stage control system (not shown) based on these measured values.
- a multi-point optical auto-focus sensor (AF sensor) 110 of an oblique incidence type is fixed to a support plate in the middle of the second frame 102 B, and this auto-focus sensor 1 Based on the information on the focus positions at a plurality of measurement points on wafer W measured by 10, sample stage 105 a is moved to wafer W by autofocus method and auto repeller method. Controls the focus position, and the tilt angle around the X and Y axes. Thus, the surface of the wafer W is continuously focused on the image plane of the projection optical system 104 during the exposure.
- AF sensor optical auto-focus sensor
- a wafer alignment system 114 of an off-axis system and an imaging system for performing wafer W alignment is also fixed to the second frame 102 B.
- a reticle loader system RRD for transferring a reticle R to and from a reticle stage system RST, and a wafer W is transferred to and from a wafer stage system WS.
- the wafer loader system WRD is housed in the interface and column 1 17 is installed.
- the reticle stage RST and the wafer stage system WST should be open to the outside air at the transfer port for transferring the reticle and the transfer port for transferring the reticle in column 1 17 of this interface.
- Gate valves 115 and 116 are provided in order to minimize the number of gates.
- the next shot area is moved to the scanning start position by the step movement of the XY stage 105b, and then the reticle stage 107 is moved.
- b and the XY stage 105b on the eight side are synchronously scanned in the Y direction using the projection magnification of the projection optical system 104] 3 as the speed ratio, that is, the reticle R and the corresponding shot area on the wafer W.
- the operation of scanning them while maintaining the imaging relationship is repeated in a step-and-scan manner.
- the pattern image of the reticle R is sequentially transferred to each shot area on the wafer W.
- the projection exposure apparatus of this embodiment is provided with a supply / exhaust mechanism 113 for replacing (purging) a gas in a space including the optical path of the exposure beam with a gas (purge gas) transmitted through the exposure beam.
- a supply / exhaust mechanism 113 for replacing (purging) a gas in a space including the optical path of the exposure beam with a gas (purge gas) transmitted through the exposure beam.
- the sub-chambers 103, 108, and 106 have high airtightness as a closed room, and the space between each optical member in the projection optical system 104 has a high airtightness. (This also corresponds to an airtight room).
- a high-purity purge gas is supplied into the sub-chambers 103, 108 and 106 by an air supply / exhaust mechanism 113, and each of the lens chambers in the projection optical system 104 is also supplied with a high-purity purge gas.
- a high-purity purge gas is supplied (details will be described later).
- the second sub-chamber 108 and the third sub-chamber 106 and the gate valves 1 15 and 1 16 of the column 1 17 are also flexible.
- a cylindrical film-like cover 1118A and 1188B having the properties are provided.
- the film-shaped cover 110 A to 101 D, 118 A and 118 B correspond to the flexible film-shaped covering member of the present invention, and the film cover is a soft shield. It can also be called a member or a bellows with extremely low stiffness.
- These film-shaped covers 110 A to 101 D, 118 A and 118 B substantially seal their boundaries, so that the optical path of the exposure beam is almost completely sealed. It will be. For this reason, the gas containing the light absorbing substance from the outside is hardly mixed into the optical path of the exposure beam, and the attenuation of the exposure beam can be suppressed to a very low level.
- the supply / exhaust mechanism 113 of the present example includes a collection unit for collecting the purge gas, a storage unit for storing the high-purity purge gas, and a temperature control of the purge gas. It is composed of an air supply section and the like to be supplied to the outside. High-purity purge gas is supplied to the sub-chambers 103, 108, 106 and the projection optical system 104 via the air supply pipe 126, respectively. Purge gas supplied at a pressure slightly higher than atmospheric pressure (positive pressure) and containing impurities flowing through the subchambers 103, 108, 106 and the inside of the projection optical system 104 Are respectively recovered through exhaust pipes 1 27 with a valve V.
- the supply / exhaust mechanism 113 separates the purge gas from the collected gas and compresses the separated purge gas to a high pressure or liquefies and temporarily stores the purge gas.
- an impurity sensor for measuring, for example, the concentration of oxygen as a light-absorbing substance is installed inside the sub-chambers 103, 108, 106 and the projection optical system 104. If the concentration of the light-absorbing substance detected by the impurity sensor exceeds a predetermined allowable value, recover gas through the exhaust pipe 127 and replenish high-purity purge gas through the air supply pipe 126. However, the gas flow is controlled by flowing gas at a substantially constant (slightly positive) pressure.
- the allowable value of the concentration may be changed according to the type of the light-absorbing substance, for example, by setting the allowable value of the concentration for the organic substance to be lower than the allowable value of the concentration of carbon dioxide or the like. Good. Also, the part for storing the reticle-port-type RRD and the wafer-port-type WRD in the interface * column 117 is made airtight, and purge gas may be supplied to these spaces. Good.
- the purge gas obtained by treating the gas recovered from the sub-chamber 103 to the projection optical system 104 as described above is supplied into the interface face • column 117, and the sub-chamber 103 is supplied. Unused high-purity purge gas accumulated in the purge gas accumulation section may be supplied to the projection optical system 104. It should be noted that the concentration of impurities in each of the sub-chamber projection optical systems is not limited to the above-mentioned allowable value (10 to 100 ppm), and the allowable value may be varied depending on the location. .
- the supply / exhaust mechanism 113 adjusts the temperature, humidity, pressure, etc. of the supplied purge gas when supplying the purge gas, and also removes dust by using a dust filter such as a HEPA filter (high efficiency particulate air filter).
- a dust filter such as a HEPA filter (high efficiency particulate air filter).
- the above-mentioned light-absorbing substances and the like are removed from the purge gas by a filter such as a chemical filter for removing the above-mentioned light-absorbing substances containing a trace amount of organic substances and the like.
- the material to be removed here may be a substance that adheres to the optical element used in the projection exposure apparatus and causes fogging, or floats in the optical path of the exposure beam and causes the illumination optical system or the projection optical system 104 Substances that change transmittance (illuminance) or illuminance distribution, or substances that adhere to the surface of wafer W (photoresist) and deform the pattern image after development processing are also included.
- an activated carbon filter eg, Gigasorb (trade name) manufactured by Niyu Co., Ltd.
- a zeolite filter a filter combining these can be used.
- silicon-based organic substances such as siloxane (a substance whose axis is a Si single chain) or silazane (a substance whose axis is a Si_N chain) are removed.
- the transmittance for the exposure beam is maintained high, and the illuminance of the exposure beam incident on the wafer W is increased. Exposure time for each shot area can be shortened, and throughput can be improved.
- the optical paths of the measurement beams of the optical measuring instruments such as the laser interferometers 109 and 111 and the autofocus sensor 110 are set in the atmosphere of the purge gas. Yotsute thereto, c which can suppress the generation of measurement error due to fluctuation of the gas on the optical path of the measurement beam of the optical measuring instrument
- the film-shaped covers 101A to 101D, 118A, and 118B of this example will be described in detail with reference to FIGS.
- the configuration of the film-shaped cover 101A will be described typically.
- FIG. 4 shows a state in which the film-shaped cover 101 A of this example is attached.
- both ends of the film-shaped cover 101 A are made of metal such as aluminum, ceramics, or the like.
- the film-shaped cover 110 A is provided with the lower end of the first sub-chamber 3 and the second sub-chamber 1 in FIG. 3 through the flanges 130 and 13 1. It is mounted so as to cover the top of 08, and the flanges 130, 13 1 are screwed to the installation surface.
- a ring or the like made of a material (for example, a fluorine-based resin) with a small outgassing may be arranged between the flanges 130 and 13 and the installation surface.
- Fig. 5 shows a cross-sectional view of the film-shaped cover 101A of Fig. 3 enlarged in the thickness direction.
- the film-shaped cover 101A of this example is made of an ethylene-vinyl-alcohol resin.
- EVOH resin ethylene-vinyl-alcohol resin
- a flexible stretchable protective film made of polyethylene (1- (CH 2 CH 2 ) n- ) is adhered to the outer surface of the film material 101 c via an adhesive
- a stabilizing film 101b made of aluminum (A1) is coated on the inner surface of the film material 101c by vapor deposition or the like.
- Ethylene vinyl alcohol resin (EVOH resin) is extremely excellent in gas barrier properties (gas barrier properties).
- the stabilizing film 101b is formed of a substance that does not generate degassing or has extremely low degassing.
- the film-like cover 101 A is basically composed of a protective film 10 Id (third material) having good elasticity and a film material 1 ⁇ 1 having good gas barrier property. c (first material) and a laminating process (multi-layer process), and a stabilizing film 101b (second material) with extremely low degassing is applied to the inner surface of the laminate film.
- the overall thickness of the cover 101A is about 0.1 mm.
- the end A is welded with a protective film 101d having excellent welding properties facing the other end, and the welded portion is bonded. The material is completely sealed with 101 e.
- the protective film 101d has good stretchability, it has poor gas barrier properties, is easily degassed, and has the drawback that metal and the like are not easily adhered to the inner surface. Therefore, in this example, the film material 101 c having excellent gas barrier properties, preventing the inflow of outside air and the outflow of purge gas, and easily adhering metal or the like to the inner surface of the protective film 101 d. Is formed, and a stabilizing film 101 b is formed on the inner surface thereof.
- the stabilizing film 101b prevents the adhesive used for forming the film-like cover 101A, the protective film 10ld, and degassing generated from heat sealing, etc., from the film-like cover. It is prevented from entering inside 101 A, that is, on the optical path of the exposure beam. Further, by coating the inner surface with the stabilizing film 101b, the barrier property against gas is further improved.
- the film-shaped cover 101A of this example has a large flexibility such as a film material 101c, that is, is formed of a material having extremely small rigidity and excellent gas barrier properties. Compared to the case where a metal bellows mechanism is used, the same gas barrier property is obtained, and the sub-chamber 103 and the sub-chamber 108 (reticle chamber) shown in Fig. 3 are mutually connected. Vibration is hardly transmitted to
- other film-shaped covers 110 B: L 0 1 D, 118 A, and 118 B are formed in the same manner as the film cover 110 A, and are formed between adjacent airtight chambers. This makes it difficult to transmit vibrations to each other.
- the effects of vibrations and eccentric loads generated from the reticle stage system RST and the wafer stage system WS T in FIG. 3 are hardly transmitted to the projection optical system 104, the second frame 102, etc., and the wafer stage system WS Deterioration of the imaging characteristics of the projection optical system 104 due to vibration or uneven load generated from ⁇ can be suppressed, and high-precision exposure can be performed.
- the laser interferometers 109 and 111 attached to the second frame 102 ⁇ , the support frame 112 for the reticle alignment system, the wafer alignment system 114, and the auto focus sensor 1 The occurrence of measurement errors such as 10 can be suppressed.
- a film cover is provided between the reticle stage system RST (second subchamber 108) and the wafer stage system WS ⁇ (third subchamber 106) and the interface / column 117, respectively.
- the 1 18 ⁇ and 1 ⁇ 8 ⁇ it is possible to prevent the vibration generated from the reticle loader system RRD and wafer loader system WRD in the interface column 1 117 from being transmitted to the projection exposure apparatus main body.
- the gate valves 1 15 and 1 16 on the side of the interface 1 and column 1 17 the effects of vibrations that occur when the gate valves 1 1 5 and 1 16 open and close are suppressed. be able to.
- the material of the film material 101c used for forming the film cover 101 1 to 118 1 is not limited to the ethylene / vinyl / alcohol resin of this example, but may be a polyamide (polyamide). ), Polyimide, polyester, or the like, as long as the material has good barrier properties against gas and is flexible.
- ethylene / vinyl / alcohol resin is most desirable in terms of the best gas barrier properties
- polyester is most desirable in terms of price and economy
- polyamide or polyimide is most desirable in terms of cost performance. Is desirable.
- the material coated on the inner surface of the film cover 101A to 118B as the protective film 101d is not limited to aluminum of this example, but may be other metals or inorganic materials such as ceramics. A material having low reactivity to an exposure beam such as vacuum ultraviolet light and low degassing as described above may be used.
- the protective film 10 Id polypropylene or the like can be used in addition to polyethylene.
- the film material is used only from the film material 101c and the stabilizing film 101b.
- the cover 101 A to 118 B may be formed.
- the film cover 110 A to 118 B can be formed only from the film material 101 c. May be formed.
- the number and locations of the film-shaped covers 101A to 118B are not limited to the configuration of this example, but may be such that the optical path of the exposure beam is sealed or a portion (reticle) leading to the optical path. It is only necessary that a film-like cover be installed so as to hermetically seal the loader system RRD installation section. For example, when driving each stage system using the counter balance to satisfy the law of conservation of momentum, a film cover may be installed in the space between the counter balance and the movable stage of the stage system. Good.
- FIG. 6 (a) shows the film-shaped cover 141 of this example, and the film-shaped cover 141 of this example is similar to the above-described film-shaped covers 101A to 118B. It is formed by laminating a film material with good gas barrier properties and a protective film with good elasticity.
- the above-mentioned film-shaped cover 101 A-l 18 B Force Protective film 1 0 1 d
- the film-shaped cover 14 1 of the present example has a protective film 14 1 a having excellent welding properties so as to cover the joining portion of the cylindrically wound member. It is formed in a cylindrical shape by joining. That is, as shown in FIG.
- the film-like cover 14 1 of this example is made of polyethylene, which is bonded to the outer surface of a film material 14 1 c made of ethylene / vinyl / alcohol resin through an adhesive material 14 1 e.
- a flexible stretchable protective film 141d is applied, and a protective film 1441a with excellent weldability is welded so as to cover the joint from the outer surface, or applied via an adhesive. It is formed by doing
- a stabilizing film 144b made of aluminum is coated on the inner surface of the film material 141c by vapor deposition or the like.
- the overall thickness d1 of the film-shaped cover 141 is about 0.1 mm.
- the thickness d2 of the joining protective film 141a for closing the film-shaped cover 141 in a cylindrical shape is about 0.03 mm.
- the cause of the impurities remaining on the inner surface of the film-like cover 141 is as follows. Therefore, there is an advantage that the inside of the film-like cover 141 can be more efficiently purged.
- the outer surface of one end and the inner surface of the other end may be simply overlapped with a predetermined width and fixed by an adhesive or welding.
- the film-shaped cover 110A to 118B and 141 are made of a flat material
- the film-shaped cover as a covering member is formed in a bellows shape. You may.
- the bellows shape facilitates installation or improves durability against external pressure differences May be.
- the film-shaped covers 101 A to 118 B and 141 do not need to be provided at all the connection parts described above, and need only be provided at at least one connection part. Further, when the illumination optical system or the projection optical system is stored in a plurality of hermetic chambers separately, the above-mentioned film cover may be provided at the connection portion. This is the same when the reticle loader system RRD or the wafer loader system WRD is stored in a plurality of hermetic chambers. Further, an optical system (for example, a wafer alignment system 114, an auto focus sensor 110, a laser interference system), a part of which is disposed outside the second sub-chamber 108 or the third sub-chamber 106.
- an optical system for example, a wafer alignment system 114, an auto focus sensor 110, a laser interference system
- a film cover may be provided at the connection between the lens barrel (housing) that houses the total of 109, 111, etc.) and its sub-chamber. Further, a film-shaped cover may be provided at a connection portion between each of the above sub-chambers, the projection optical system, and the like and a pipe for supplying and discharging the purge gas.
- the film-like cover of the second embodiment may be used instead of the bellows 25, 36, 43, or the bellows may be used.
- the stabilizing film 101b of the second embodiment may be provided on the inner surfaces of 25, 36, and 43.
- the bellows in the first embodiment or the film-like cover in the second embodiment has an inner surface made of a material with less degassing, but degassing from the inner surface. When this can occur, a suction tube may be connected to a portion of the bellows or film cover to recover the degassed gas.
- the present invention is applied to a step-and-scan type projection exposure apparatus.
- the present invention is applied to a step-and-stitch type scanning exposure apparatus. It can also be applied to a batch exposure type projection exposure apparatus such as a mirror, a stepper, etc., and also to a mirror type or proximity type exposure apparatus that does not use a projection optical system. It is clear that.
- the optical system may be any one of a refraction system, a reflection system, and a catadioptric system, and may be any one of a reduction system, a unit magnification system, and an enlargement system. You may.
- the present invention can be applied to an exposure apparatus that transfers a circuit pattern onto a glass substrate, a silicon wafer, or the like.
- a transmissive reticle is generally used in an exposure apparatus using DUV (far ultraviolet) light, VUV (vacuum ultraviolet) light, or the like, and quartz glass, fluorine-doped quartz glass, or fluorescent glass is used as a reticle substrate. Stone, magnesium fluoride, quartz, or the like is used.
- a reflection type mask is used in an exposure apparatus that uses EUV light (extreme ultraviolet light) as an exposure energy beam.
- EUV light extreme ultraviolet light
- a transmission type mask stencil mask, membrane
- a mask is used, and a silicon wafer or the like is used as a mask substrate.
- a single-wavelength laser in the infrared or visible range oscillated from a DFB semiconductor laser or a fiber laser for example, Erbium (Er) (or Erbium and Ytterbium (Yb))
- Erbium (Er) or Erbium and Ytterbium (Yb)
- the present invention is also applied to a case where a harmonic is amplified by a doped fiber amplifier and wavelength-converted to ultraviolet light using a nonlinear optical crystal.
- the generation wavelength is in the range of 189 to 199 nm.
- a 10th harmonic having a wavelength in the range of 151 to 159 nm is output.
- the oscillation wavelength is within the range of 1.544 to 1.553 zm
- the 8th harmonic within the range of 193 to 194 nm, that is, ultraviolet light having substantially the same wavelength as the ArF excimer laser is obtained, and the oscillation wavelength is set within the range of 1.57 to 1.58 xm.
- a 10th harmonic within the range of 157 to 158 nm, that is, ultraviolet light having substantially the same wavelength as the F 2 laser is obtained.
- the illumination optical system composed of a plurality of optical elements and the projection optical system are incorporated into the main body of the exposure apparatus to perform optical adjustment, and the reticle stage and wafer stage consisting of many mechanical parts are attached to the main body of the exposure apparatus and wired.
- An exposure apparatus can be manufactured. It is desirable to manufacture the exposure apparatus in a clean room where the temperature, cleanliness, etc. are controlled.
- a step of designing function and performance of the device a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and a reticle pattern by the exposure apparatus of the above-described embodiment. It is manufactured through the steps of exposing a wafer to a wafer, device assembly steps (including dicing, bonding, and packaging steps), and inspection steps.
- the present invention is not limited to the above-described embodiment, and can take various configurations without departing from the gist of the present invention.
- Japanese Patent Application No. 111149598 filed on May 28, 1999, and Japanese Patent Filed on February 28, 2000, including the specification, claims, drawings and abstract.
- the entire disclosure of application No. 2000-5110 is hereby incorporated by reference in its entirety.
- Industrial applicability According to the first exposure method of the present invention, since the stage system and the projection system are supported so that vibrations are not easily transmitted to each other, the vibration of the movable part of the stage system is not easily transmitted to the projection system or the like. Therefore, the position of the movable part can be measured with high accuracy. Therefore, there is an advantage that the control accuracy of the movable part can be improved.
- the stage system and the projection system are connected to the support member via the vibration isolating members independently of each other, the stage system and the projection system Vibration is hardly transmitted between them, and the first exposure method of the present invention can be used.
- the projection system has an airtight structure
- a chamber surrounding each part of the illumination system and each stage system is provided, and a flexible connecting member for sealing each chamber and the projection system is provided.
- the light amount of the exposure beam can be kept high, and even if vibration occurs in one of the hermetic chambers, Is not transmitted to other hermetic chambers.For example, even if vibration is generated by moving the object, the imaging characteristics of the projection optical system and the measurement accuracy of the laser interferometer do not deteriorate. High-throughput and high-precision exposure can be performed.
- highly accurate exposure can be performed by using the exposure method or the exposure apparatus of the present invention, and a highly functional device can be manufactured.
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/979,749 US6961113B1 (en) | 1999-05-28 | 2000-05-26 | Exposure method and apparatus |
KR1020017015127A KR20020036951A (ko) | 1999-05-28 | 2000-05-26 | 노광방법 및 장치 |
AU49499/00A AU4949900A (en) | 1999-05-28 | 2000-05-26 | Exposure method and apparatus |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14959899 | 1999-05-28 | ||
JP11/149598 | 1999-05-28 | ||
JP2000/51106 | 2000-02-28 | ||
JP2000051106 | 2000-02-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000074120A1 true WO2000074120A1 (fr) | 2000-12-07 |
Family
ID=26479434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2000/003389 WO2000074120A1 (fr) | 1999-05-28 | 2000-05-26 | Procede et appareil d'exposition |
Country Status (5)
Country | Link |
---|---|
US (1) | US6961113B1 (ja) |
KR (1) | KR20020036951A (ja) |
AU (1) | AU4949900A (ja) |
TW (1) | TW544754B (ja) |
WO (1) | WO2000074120A1 (ja) |
Cited By (6)
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JP2003007580A (ja) * | 2001-06-19 | 2003-01-10 | Canon Inc | 温調エア供給装置及び半導体製造装置 |
JP2003086504A (ja) * | 2001-08-15 | 2003-03-20 | Asml Netherlands Bv | リソグラフィ機器、装置製造方法および製造される装置 |
US6614508B2 (en) | 2001-08-16 | 2003-09-02 | Nikon Corporation | Reversed, double-helical bellows seal |
WO2003092057A1 (fr) * | 2002-04-24 | 2003-11-06 | Nikon Corporation | Systeme d'exposition et procede de fabrication de dispositif |
US6690450B2 (en) | 2000-01-31 | 2004-02-10 | Nikon Corporation | Exposure method, exposure apparatus, method for producing exposure apparatus, and method for producing device |
JP2019066887A (ja) * | 2004-11-18 | 2019-04-25 | 株式会社ニコン | 露光装置及び露光方法、並びに半導体デバイス製造方法 |
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AU2003235305A1 (en) * | 2002-04-19 | 2003-11-03 | Tokyo Electron Limited | Method of treating substrate and process for producing semiconductor device |
JP2004110970A (ja) * | 2002-09-19 | 2004-04-08 | Tdk Corp | ディスク状記録媒体の製造方法 |
US20060285091A1 (en) * | 2003-07-21 | 2006-12-21 | Parekh Bipin S | Lithographic projection apparatus, gas purging method, device manufacturing method and purge gas supply system related application |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
JP2005142185A (ja) * | 2003-11-04 | 2005-06-02 | Canon Inc | 露光装置及びその環境制御方法 |
US20070085984A1 (en) * | 2005-10-18 | 2007-04-19 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method and device manufactured thereby |
TWI330762B (en) * | 2005-03-29 | 2010-09-21 | Asml Netherlands Bv | Seal of a lithographic apparatus, lithographic apparatus, device manufacturing method and data storage medium |
US7502095B2 (en) * | 2005-03-29 | 2009-03-10 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US7389206B2 (en) * | 2006-08-10 | 2008-06-17 | General Electric Company | Inspection systems and methods of operation |
DE502006008851D1 (de) * | 2006-11-08 | 2011-03-17 | Integrated Dynamics Eng Gmbh | Kombiniertes Motion-Control-System |
NL1036957A1 (nl) * | 2008-06-13 | 2009-12-15 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
JP5737983B2 (ja) * | 2010-04-23 | 2015-06-17 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
DE102012219806A1 (de) * | 2012-10-30 | 2014-04-30 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage mit mindestens einem Mittel zur Reduktion des Einflusses von Druckschwankungen |
IL230327B (en) | 2014-01-01 | 2019-11-28 | Israel Aerospace Ind Ltd | An interceptor missile and a warhead for it |
WO2016047620A1 (ja) * | 2014-09-22 | 2016-03-31 | イーグル工業株式会社 | 液体供給システム |
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- 2000-05-26 US US09/979,749 patent/US6961113B1/en not_active Expired - Fee Related
- 2000-05-26 WO PCT/JP2000/003389 patent/WO2000074120A1/ja active Application Filing
- 2000-05-26 KR KR1020017015127A patent/KR20020036951A/ko not_active Application Discontinuation
- 2000-05-26 AU AU49499/00A patent/AU4949900A/en not_active Abandoned
- 2000-05-29 TW TW089110388A patent/TW544754B/zh not_active IP Right Cessation
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Publication number | Priority date | Publication date | Assignee | Title |
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US6690450B2 (en) | 2000-01-31 | 2004-02-10 | Nikon Corporation | Exposure method, exposure apparatus, method for producing exposure apparatus, and method for producing device |
SG101954A1 (en) * | 2000-01-31 | 2004-02-27 | Nikon Corp | Exposure method, exposure apparatus, method for producing exposure apparatus, and method for producing device |
JP2003007580A (ja) * | 2001-06-19 | 2003-01-10 | Canon Inc | 温調エア供給装置及び半導体製造装置 |
JP2003086504A (ja) * | 2001-08-15 | 2003-03-20 | Asml Netherlands Bv | リソグラフィ機器、装置製造方法および製造される装置 |
US6614508B2 (en) | 2001-08-16 | 2003-09-02 | Nikon Corporation | Reversed, double-helical bellows seal |
US6888617B2 (en) | 2001-08-16 | 2005-05-03 | Nikon Corporation | Reversed, double-helical bellows seal |
WO2003092057A1 (fr) * | 2002-04-24 | 2003-11-06 | Nikon Corporation | Systeme d'exposition et procede de fabrication de dispositif |
US7106414B2 (en) | 2002-04-24 | 2006-09-12 | Nikon Corporation | Exposure system and method for manufacturing device |
JP2019066887A (ja) * | 2004-11-18 | 2019-04-25 | 株式会社ニコン | 露光装置及び露光方法、並びに半導体デバイス製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US6961113B1 (en) | 2005-11-01 |
AU4949900A (en) | 2000-12-18 |
KR20020036951A (ko) | 2002-05-17 |
TW544754B (en) | 2003-08-01 |
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