WO1999040446A1 - Procede de mesure du courant, detecteur de courant et testeur ci utilisant ledit detecteur - Google Patents

Procede de mesure du courant, detecteur de courant et testeur ci utilisant ledit detecteur Download PDF

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Publication number
WO1999040446A1
WO1999040446A1 PCT/JP1998/000479 JP9800479W WO9940446A1 WO 1999040446 A1 WO1999040446 A1 WO 1999040446A1 JP 9800479 W JP9800479 W JP 9800479W WO 9940446 A1 WO9940446 A1 WO 9940446A1
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WO
WIPO (PCT)
Prior art keywords
current
optical
light
under test
test
Prior art date
Application number
PCT/JP1998/000479
Other languages
English (en)
Japanese (ja)
Other versions
WO1999040446A8 (fr
Inventor
Toshiyuki Okayasu
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Priority to KR1019997009086A priority Critical patent/KR20010006008A/ko
Priority to GB9923232A priority patent/GB2340233A/en
Priority to PCT/JP1998/000479 priority patent/WO1999040446A1/fr
Priority to DE19882306T priority patent/DE19882306T1/de
Priority to CN98803958.3A priority patent/CN1252130A/zh
Priority to TW087103066A priority patent/TW359753B/zh
Publication of WO1999040446A1 publication Critical patent/WO1999040446A1/fr
Publication of WO1999040446A8 publication Critical patent/WO1999040446A8/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2879—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/24—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices
    • G01R15/241—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices using electro-optical modulators, e.g. electro-absorption
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
    • G01R19/16571—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing AC or DC current with one threshold, e.g. load current, over-current, surge current or fault current

Definitions

  • the present invention relates to a current measurement method capable of adopting a wide measurement range by using an optical modulator, a current sensor configured using the current measurement method, and an IC test apparatus using the current sensor.
  • An IC tester that measures a small current at rest at the power supply terminal of the IC under test composed of a die IC at high speed, and determines the quality of the IC based on whether the measured current value falls within the normal range.
  • Figure 15 shows an example of the test method.
  • a predetermined power supply voltage V DD is applied to the power supply terminal T VDD of the IC under test 11 from the DC power supply 12 through the current measuring means 13.
  • the current measuring means 13 includes a shunt resistor SR for converting a current into a voltage, a differential amplifier DF for extracting a potential difference generated between both ends of the shunt resistor SR as a voltage value, and a differential amplifier DF. It consists of a limiter diode D connected in parallel to the input terminal.
  • the voltage signal output from the differential amplifier DF is sampled and held by the sample and hold circuit 14 at a predetermined timing, the sampled and held voltage is AD converted by the AD converter 15, and the digital output is measured as a current measurement result. And outputs the result to the arithmetic processing unit 16 to determine whether the measured current value is within a predetermined range.
  • the inside of the IC under test 11 is generally constituted by a CMOS circuit. It is a target.
  • the CMOS type circuit has an N-channel FET and a P-channel FET that are connected in a complementary manner, and both of them are alternately turned on and off, and the signal is inverted. Execute transmission.
  • a relatively large current flows when the complementary-connected FETs invert the state of each other, and when the state is stabilized, the current (generally referred to as a leak current) sharply decreases to a minute value. That is, the current flows in a pulse shape as shown by the dotted line in FIG.
  • Peak of high current pulses I PL flowing in pulses is reached in large scale numbers in IC A, the leakage current I s flowing through a stationary state is approximately several / i A.
  • the leakage current I s flowing while the FET state is stable falls within a normal range. Therefore it is necessary to accurately measure the leakage current I s.
  • a phenomenon that stabilizes at the target leakage current value (hereinafter, this phenomenon is referred to as settling) occurs.
  • Ri by the fact that this set ring occurs, the timing of the falling edge of the high current pulse I PL ⁇ .
  • the measurement point PT can be set only after a lapse of at least a time TS (hereinafter, this time TS is referred to as a settling time). So within the settling time TS The correct current value cannot be measured.
  • the current Is flowing through the power supply terminal T VDD of the IC under test 11 when the IC under test 11 is at rest is measured, and the presence or absence of a large value of leak current that should not flow naturally Is checked to determine whether the IC is good or not. Whether or not a fault location inside the IC is reflected in the leakage of the power supply current depends on the logic state of the fault location. Therefore, it is necessary to measure the power supply current each time while changing the combination of logic states inside the IC. To change the combination of logic states, the IC under test 11 must be inverted. Since the large current pulse IPL always flows when the IC under test 11 is operated, the leakage current IS after the state change is measured after the settling time TS has elapsed.
  • the measurement period T Es for repeating the state change and the measurement of the leakage current I s is affected by the length of the settling time T S.
  • the settling time TS is long, the cycle of changing the state of the IC under test 11 cannot be shortened, so that the measurement cycle TES of the leak current I s becomes long, and all the states of the ICI 1 under test are tested.
  • the time is long. As ICs tend to increase in size, the time required for testing increases.
  • the DC power supply 12 and the current measuring means 13 are arranged near the IC 11 under test, that is, in a portion called a test head, and the output signal of the differential amplifier DF is output from the test head by a cable or the like.
  • the signal is transmitted to the measuring instrument main body that is located at a distance, sample hold and AD conversion are executed on the measuring instrument main body side, and the arithmetic processing unit 16 compares and judges the quality. For this reason, when the distance between the test head and the measuring instrument body becomes long, it is susceptible to the influence of the capacitance of the signal transmission line, parasitic inductor, external noise, etc., and there is a disadvantage that the measurement accuracy is deteriorated.
  • a first object of the present invention is to provide a current measurement method having a wide current measurement range, that is, a wide dynamic range, so that the above-described settling does not occur, and therefore, for a very short time immediately after a large current pulse. It proposes a current measurement method capable of measuring a quiescent current, a current sensor using the current measurement method, and an IC test apparatus using the current sensor.
  • a second object of the present invention is to increase the distance between the test head and the measuring instrument body.
  • it proposes a current measurement method that is not affected by the signal transmission path, and therefore has little deterioration in measurement accuracy, and an IC test apparatus using this method. Disclosure of the invention
  • a current to be measured in which a large current having a large amplitude in a pulse form and a small current are alternately repeated is converted into a voltage signal, and this voltage signal is applied to an electric field application electrode of an optical modulator.
  • the optical modulator modulates the light, interferes the modulated light with the unmodulated light to obtain interference light, and converts the intensity of the interference light into an electric signal by a photodetector, thereby obtaining an optical signal. It proposes a current measurement method that extracts electric signals corresponding to the measured current value.
  • the optical modulator does not saturate even when a large-amplitude electric field is applied, and there is no settling even immediately after a large-amplitude pulsed voltage signal is applied. .
  • the leakage current I s should be measured without being affected by the settling. Can be.
  • the present invention further proposes an Ic test apparatus to which the current measuring method is applied.
  • the IC test apparatus proposed in the present invention measures the leakage current at rest in each state while changing the state of the CMOS type IC, and determines whether the leakage current at rest is greater than a specified value.
  • the leak current can be measured immediately without being affected by settling, and the state of Ic under test can be measured at high speed.
  • the inversion can be performed, and the leakage current in each inversion state can be measured.
  • a test head on which the IC under test is mounted can be connected to the measuring instrument main body that executes a process such as a current value comparison operation by an optical waveguide. Therefore, the optical waveguide is not affected by the capacitance, the parasitic inductor, and the external induction noise. As a result, the distance between the test head and the measuring Even if this is not the case, the advantage is obtained that the measurement accuracy can be maintained in a good state.
  • FIG. 1 is a plan view for explaining a current measuring method according to the present invention and a current sensor using the current measuring method.
  • FIG. 2 is a plan view for explaining the current measuring method and the operation of the optical modulator used in the current sensor according to the present invention.
  • FIG. 3 is a waveform chart for explaining the operation of the optical modulator shown in FIG.
  • FIG. 4 is a waveform chart for explaining the operation of the embodiment shown in FIG.
  • FIG. 5 is a plan view showing a modified example of the current sensor shown in FIG.
  • FIG. 6 is a plan view for explaining another example of the current measuring method according to the present invention.
  • FIG. 7 is a perspective view showing an example of a specific structure of an optical modulator used for a current sensor according to the present invention.
  • FIG. 8 is a plan view for explaining an example of an IC test apparatus using the current sensor according to the present invention.
  • FIG. 9 is a waveform chart for explaining the operation of the embodiment shown in FIG.
  • FIG. 10 is a plan view for explaining a modified embodiment of the embodiment shown in FIG.
  • FIG. 11 is a waveform chart for explaining the operation of the embodiment shown in FIG.
  • FIG. 12 is a plan view for explaining a modified embodiment of the embodiment shown in FIG.
  • FIG. 13 is a perspective view for explaining still another modified embodiment of the embodiment shown in FIG.
  • FIG. 14 is a plan view for explaining a modified embodiment of the IC test apparatus according to the present invention.
  • Figure 15 is a connection diagram for explaining the conventional technology.
  • FIG. 16 is a waveform chart for explaining the operation of the conventional technique shown in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
  • the circuit to be measured to output the measured current I M in FIG, 2 0 indicates a current sensor for measuring the value of the measured current IM by the current measuring method proposed in this invention.
  • the measured current I is supplied to the current-to-voltage converter 30, the voltage signal VS generated in the current-to-voltage converter 30 is input to the optical modulator 40, and the voltage signal VS is It proposes a current measurement method that converts the intensity of the interference light into an electric signal, and converts the intensity of the interference light into an electric signal to measure the measured current I.
  • the current sensor 20 includes the substrate 21, the current-to-voltage converter 30 mounted on the substrate 21, and the optical modulator 40 mounted on the substrate 21 similarly.
  • a voltage VS corresponding to the current I M to be measured is generated by the current-to-voltage converter 30, and this voltage VS is applied to the optical modulator 40.
  • the branching interference type optical modulator 40 for example, a branch interference type optical modulator shown in FIG. 2 can be used.
  • the branching interference type optical modulator 40 includes an optical branching section 42 for branching the optical waveguide, an optical multiplexing section 43, and two optical sections formed between the optical branching section 42 and the optical multiplexing section 43. It is composed of optical waveguides 44A, 44B and electric field applying electrodes 45, 46, 47 formed on both sides of the two optical waveguides 44A, 44B.
  • Optical branch unit 4 2, optical multiplexer 4 3, the optical waveguide 4 4 A, 4 4 B respectively e.g. Nio lithium Bed acid (L i N b 0 3) dielectric substrate 4 1 composed of such, for example, titanium And the like can be diffused.
  • an optical waveguide such as an optical fiber is provided at the input end 49 A and the output end 49 B of the light exposed on the end face of the dielectric substrate 41.
  • a light source 51 such as a laser diode was coupled to the other end of the input optical waveguide 22 optically coupled to the input end 49 A, and was coupled to an output end 49 B.
  • a photodetector 53 such as a photodiode is coupled to the other end of the output optical waveguide 23.
  • the light source 51 is driven to a lighting state by the light source driving circuit 52.
  • This example shows a case where the motor is driven by a DC power supply. Therefore, the light source 51 enters a constant amount of laser light into the input optical waveguide 22.
  • a detection circuit 54 is connected to the photodetector 53, and the intensity of light emitted from the output optical waveguide 23 is converted into an electric signal and extracted.
  • the voltage VS generated in the current-to-voltage converter 30 is applied to one pair of the electric field application electrodes 45, 46, and 47.
  • the voltage VS generated in the current-to-voltage converter 30 is applied between the electric field applying electrodes 45 and 46, and the pair of the electric field applying electrodes 45 and 47 is The case where no electric field is applied by connecting the electrodes 45 and 47 in common is shown.
  • the optical waveguide 44A to which the electric field is applied has a phase with the light.
  • the light that is modulated and passes through the other electric field-side optical waveguide 44B passes without modulation.
  • the optical modulation characteristic shown in A shows a case where the optical path lengths of the optical waveguides 44 A and 44 B are the same, but between one optical path length and the other optical path length, only one to four wavelengths of the light propagating.
  • the value of the current to be measured I M can be specified simply by measuring the voltage between these values.
  • the circuit 54 can measure a voltage corresponding to a current value without saturation even without a limiter circuit. As a result, since the settling phenomenon even after a large current pulse I PL as shown in FIG. 4 is not generated, timing T. falling of a large current pulse I PL After a short period of time, the small current I s can be measured, and the high-speed test can be performed by measuring the leakage current flowing when the COMS type IC is at rest and using the IC test equipment to judge the quality of the IC under test. Is obtained.
  • the detection sensitivity of the current sensor 20 is proportional to the electrode length L of the electric field application electrodes 45, 46, and 47, and is inversely proportional to the gap between the electrodes, so that the electrode gap is narrow and the electrode length L is long. Desired sensitivity can be obtained.
  • the detection sensitivity can also be increased by increasing the light emission intensity of the light source 51 as necessary.
  • the detection sensitivity can be doubled by differentially applying the voltage VS to the two optical waveguides 44A and 44B.
  • FIG. 6 shows another embodiment of the current measuring method according to the present invention.
  • the photodetector 53 By inputting and detecting the transmission amount of the light pulse 56 by the photodetector 53, the measured value at the target timing position can be accurately measured.
  • the timing position to be measured is determined by the application timing of the light pulse 56. Therefore, by restricting the pulse width of the light pulse 56 to be narrow, the position of the measurement timing can be set with high resolution.
  • the photodetector 53 only needs to measure the total amount of transmitted light. Therefore, an integrating circuit 57 is provided on the output side of the detecting circuit 54, and by measuring the integrated voltage integrated in the integrating circuit 57, the measured current The value of IM can be measured. Therefore, the response speed of the photodetector 53 is Not required. Therefore, in addition to requiring high-speed operation only for the optical switch 55, other elements and circuits can achieve high-resolution measurement timing resolution without requiring high-speed operation.
  • FIG. 7 shows an example of a specific implementation structure of the current sensor 2 ().
  • the substrate 21 can be made of, for example, an insulating material such as a ceramic.
  • a resistive film 31 constituting the current-to-voltage converter 30 is formed on one surface of the substrate 21 while forming the same.
  • the electrodes 32, 33 are formed on both ends of the resistive film 31.
  • the ends of the electrodes 32, 33 are electrically connected to the current measuring terminals 34, 35, respectively.
  • the converter 30 is constituted.
  • the substrate 21 can be formed in a shape having a side of about 10 mm ⁇ 10 mm.
  • the current sensor 20 can be configured by mounting the dielectric substrate 41 configuring the optical modulator 40 on a blank portion of the surface on which the current-to-voltage converter 30 is formed.
  • Each of the electrodes 32 and 33 and the electric field applying electrodes 45 and 46 constituting the optical modulator 40 can be electrically connected by, for example, a bonding wire BF or the like.
  • a bonding wire BF By forming the current sensor 20 into a card as shown in FIG. 7, it is effective when applied to an IC test device described below.
  • FIG. 8 shows an example of an IC test apparatus to which the current measuring method and the current sensor 20 according to the present invention are applied.
  • This embodiment shows a case where the current sensor 20 described with reference to FIGS. 1 to 6 is applied to an IC test apparatus.
  • the common terminal T vss Given supply voltage V DD from the DC power source 1 2 to the power supply terminal T VD D of the test IC 1 1, the common terminal T vss is connected to the common potential point.
  • the current-to-voltage converter 30 generates a voltage VS corresponding to the value of the current I DD .
  • This voltage VS is applied between the electric field application electrodes 45 and 46, and the optical modulator 40 gives optical modulation corresponding to the current flowing through the power supply terminal T VDD of the IC 11 under test.
  • the photodetector 53 converts the emission intensity of the light emitted from the output optical waveguide 23 into an electric signal, and outputs the electric signal from the detection circuit 54 as a voltage signal.
  • the voltage signal output from the detection circuit 54 is converted to a sampling pulse TGP output from the pattern generator 58 by the sample and hold circuit 14 at the timing when the ICI 1 under test is stationary. Therefore, sample and hold, the sampled and held voltage value is subjected to AD conversion by the AD conversion means 15, and the AD converted digital signal is input to the arithmetic processing unit 16 so that the digital value falls within a desired voltage range. It is determined whether or not the IC under test 11 is good or not.
  • the pattern generator 58 supplies a drive signal to the IC under test 11 to convert the state of the IC under test 11 one step at a time, and the value of the power supply current I DD in the quiescent state of each step falls within a predetermined range. Test whether it is
  • the sample-and-hold circuit 14 applies a sampling pulse TGP to the sample-and-hold circuit 14 at a timing TST slightly after the falling timing of the large current pulse IPL flowing through the IC under test 11 as shown in FIG. the minute current I s in each still state after the test IC 1 1 is inverted operation one stearyl-up was measured at each step, it is determined compared to quality with a set value previously set by the processor 1 6.
  • the IC tester be tested IC 1 1 consumes intermittent large-current pulse I PL, current sensor 2 0 and
  • the detection circuit 54 can be operated without being saturated. ⁇ Tsu Te, according to the embodiment shown in FIG.
  • the sample and hold circuit 1 4 can be sampled and held by the immediately following slight time T ST since the fall of the data Imingu high current pulses I PL, it is possible to complete the measurement in a short time. Therefore, since the cycle TES of the inversion operation of the IC under test 11 can be shortened, even if all the states of the IC under test 11 are tested, the benefit of shortening the time required for the test can be obtained. Further, according to the embodiment shown in FIG.
  • an optical switch 55 is connected to an input optical waveguide 22 connecting the light source 51 and the optical modulator 40, and the optical switch 55 is turned on in synchronization with the timing to be measured.
  • a case is shown in which the optical pulse 56 (see FIG. 11B) is applied to the optical modulator 40 in synchronization with the timing to be measured by turning off.
  • an integrating circuit 57 is provided on the output side of the detecting circuit 54, and the integrating circuit 57 integrates the total amount of light received by the photodetector 53.
  • the integrated voltage INTV (FIG. 11C) ) Is sampled and held by the sample-and-hold circuit 14 in synchronization with the sampling pulse TGP (Fig. 11D), and the sample-and-hold voltage is AD-converted by the AD converter 15 and input to the arithmetic processing unit 16. Can be configured.
  • the integration voltage I NTV of the integration circuit 57 is reset by a reset pulse R SP shown in FIG. 11E every time sampling is completed.
  • the measurement timing is determined by the application timing of the optical pulse 56 as described above with reference to FIG. . Therefore, by reducing the pulse width of the optical pulse 56, there is obtained an advantage that the resolution in the time axis direction of the measurement timing can be increased. Furthermore, according to this embodiment, since the photodetector 53, the detection circuit 54, and the sample hold circuit 14 need only obtain a value corresponding to the total amount of light received by the photodetector 53, high-speed response can be achieved. Is not required. Therefore, there is also obtained an advantage that it can be constituted by an inexpensive element that does not operate at high speed.
  • FIG. 12 shows an embodiment for testing an IC having a plurality of power supply terminals TVDD .
  • the drive circuits of the pattern generator 58 and the light source 51 and the internal structure of the current sensor 20 are omitted.
  • a number of current sensors 20 corresponding to the number of power supply terminals T VDD of the IC under test 11 are prepared. That is, in this embodiment, four current sensors 20 are prepared, one end of the current-to-voltage converter 30 of each current sensor 20 is connected to the positive voltage terminal of the DC power supply 12, and the current-to-voltage conversion is performed. Connect the other end of the unit 30 to each power supply terminal T VDD .
  • the input optical waveguide 22 and the output optical waveguide 23 leading to the optical modulator 40 are connected in series, a light source 51 is optically coupled to one end of the serially connected optical waveguide, and the other end is connected to the other end.
  • the photodetector 53 is optically coupled.
  • the light incident on the photodetector 53 has a light amount corresponding to the sum of the light modulation amounts received by the four current sensors 20, and the light amount is equal to each light It corresponds to the total value of the current flowing through the source terminal TVDD . Therefore, an addition means is configured in the optical system, and the total sum of the currents flowing through the plurality of power supply terminals TVDD is measured by one light source 51, one photodetector 53, and one detection circuit 54. it can be can Rukoto is determined whether the sum of the currents flowing through the power supply terminal T VD D is in the range of normal values.
  • FIG. 13 shows a modified embodiment of FIG. This embodiment shows an embodiment in which a probe 63 is brought into contact with an electrode portion of an IC chip 62 formed on a wafer 61 to directly test the IC in a chip state.
  • the probe 63 is supported by projecting toward the center of the ring-shaped probe force probe 64, and the tip of each probe 63 is brought into contact with each electrode portion of the chip formed on the wafer 61.
  • the power supply current and the drive signal are supplied through each probe 63, and the power supply current is measured on the power supply 12 side.
  • the current sensor 20 is mounted in the middle of the probe 63, and the optical signal optically modulated by the current sensor 20 is transmitted through the optical waveguide 23 and received by the optical detector 53. It should be done.
  • the probe card 64, the light source 51, the light detector 53, the detection circuit 53, the detection circuit 54, and the sample hold are not disturbed by extraneous electromagnetic waves even if the extension distance of the optical waveguide 23 is long. Even if the circuit 14 etc. is housed in a measuring instrument placed away from the installation position (test head) of the IC under test 11, the IC in the chip state can be tested without being affected by external electromagnetic waves. It can be carried out.
  • FIG. 14 shows a modification of the current measuring method.
  • an embodiment aiming at removing the influence of the drift of the light emission amount of the light source 51 and removing the offset voltage of the photodetector 53 will be described.
  • an optical splitter 65 is connected to the input optical waveguide 22 on the side of the light source 51, and one of the lights split by the optical splitter 65 is input to the optical modulator 40, and the other. Is passed through a correction optical waveguide 66 formed adjacent to the optical modulator 40, and the emitted light is
  • the photodetector 5 3B receives light, and a voltage signal corresponding to the amount of received light is fed back to the drive circuit 52 of the light source 51 to stabilize and control the light emission intensity of the light source 51.
  • Subtraction circuit 67 subtracts the voltage signal corresponding to the amount of light received at 3 A and 53 B Thus, the offset voltage generated in the photodetector 53 A and the detection circuit 54 A can be removed.
  • the optical branching device 65 since the light branched by the optical branching device 65 is made to pass through the optical waveguide for correction 66 formed adjacent to the optical modulator 40, the optical waveguide for correction 66 is used. Since the passing light is affected by the same temperature as the light passing through the optical modulator 40, there is an advantage that the fluctuation of the optical modulation characteristic of the optical modulator 40 due to the temperature fluctuation of the dielectric substrate 41 can be removed.
  • the current measuring method according to the present invention is suitable for measuring a leak current flowing through a power supply terminal of a CMOS type IC, and determines whether the IC is good or not based on whether or not the leak current is within a specified range. It is suitable for application to a test apparatus.
  • the measured current value detected by the current sensor 20 is transmitted through the output optical waveguide 23, and therefore, there is no possibility that the output optical waveguide 23 will be subjected to various electrical disturbances. Therefore, even if the distance between the test head and the measuring instrument body is greatly increased, there is an advantage that the measurement accuracy of the minute current can be maintained at a high accuracy state.

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  • Environmental & Geological Engineering (AREA)
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Abstract

L'invention concerne un procédé de mesure du courant consistant à convertir un courant à mesurer en un signal de tension, à moduler en phase la lumière qui traverse un modulateur optique, en raison de ce signal de tension, à obtenir une lumière d'interférence en laissant la lumière modulée en phase interférer avec la lumière non modulée en phase, et à mesurer le courant sur l'objet, en se basant sur l'intensité de la lumière d'interférence. L'invention concerne également un testeur CI adapté pour mesurer un courant circulant dans une borne d'alimentation d'un CI à tester, en utilisant le procédé précité de mesure du courant, de façon à déclarer l'objet CI défectueux lorsque l'intensité du courant résultant est supérieure à une valeur prédéterminée.
PCT/JP1998/000479 1998-02-05 1998-02-05 Procede de mesure du courant, detecteur de courant et testeur ci utilisant ledit detecteur WO1999040446A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019997009086A KR20010006008A (ko) 1998-02-05 1998-02-05 전류측정방법, 전류센서 및 이 전류센서를 사용한 ｉｃ 시험장치
GB9923232A GB2340233A (en) 1998-02-05 1998-02-05 Current measuring method,current sensor,and IC tester using the same current sensor
PCT/JP1998/000479 WO1999040446A1 (fr) 1998-02-05 1998-02-05 Procede de mesure du courant, detecteur de courant et testeur ci utilisant ledit detecteur
DE19882306T DE19882306T1 (de) 1998-02-05 1998-02-05 Strommessverfahren, Stromsensor und unter Verwendung des Stromsensors arbeitendes IC-Testgerät
CN98803958.3A CN1252130A (zh) 1998-02-05 1998-02-05 电流测定方法,电流传感器及使用该电流传感器的ic试验装置
TW087103066A TW359753B (en) 1998-02-05 1998-03-03 Current measuring method, current sensor, and IC tester using the same current sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/000479 WO1999040446A1 (fr) 1998-02-05 1998-02-05 Procede de mesure du courant, detecteur de courant et testeur ci utilisant ledit detecteur

Publications (2)

Publication Number Publication Date
WO1999040446A1 true WO1999040446A1 (fr) 1999-08-12
WO1999040446A8 WO1999040446A8 (fr) 1999-12-16

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104569544A (zh) * 2013-10-07 2015-04-29 姚晓天 法拉第电流传感器和法拉第温度传感器
CN109709384A (zh) * 2018-12-13 2019-05-03 北京航天时代光电科技有限公司 一种采用集成化光路结构的电流传感器
KR20220043433A (ko) * 2020-09-29 2022-04-05 엘아이지넥스원 주식회사 FET(Field Effect Transistor) 고장 검출 장치 및 방법
US11333688B2 (en) 2016-02-16 2022-05-17 Xiaotian Steve Yao Reflective current and magnetic sensors based on optical sensing with integrated temperature sensing

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101958263B (zh) * 2009-07-14 2013-01-02 致茂电子(苏州)有限公司 半导体晶粒点测机台检验方法及该机台
US10330706B2 (en) 2014-06-04 2019-06-25 Telefonaktiebolaget Lm Ericsson (Publ) Optical electrical measurement system, a measurement probe and a method therefor
CN107861045A (zh) * 2017-10-13 2018-03-30 天津市英贝特航天科技有限公司 一种基于直流ct技术的短路芯片查找装置及方法
CN115856396B (zh) * 2022-12-09 2023-08-29 珠海多创科技有限公司 传感探头模组、非接触式电压测量电路、方法及电子设备
KR102535830B1 (ko) * 2023-04-11 2023-05-26 주식회사 수산이앤에스 광변환기 검사 시스템

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120980A (fr) * 1974-03-11 1975-09-22
JPS59155764A (ja) * 1983-02-24 1984-09-04 Yokogawa Hokushin Electric Corp 光電圧計
JPS59218915A (ja) * 1983-05-27 1984-12-10 Yokogawa Hokushin Electric Corp 光導波路形センサ
JPS6237940A (ja) * 1985-08-12 1987-02-18 Nippon Denshi Zairyo Kk プロ−ブカ−ド
JPS6246268A (ja) * 1985-08-23 1987-02-28 Nippon Denshi Zairyo Kk プロ−ブカ−ド
JPS6478169A (en) * 1987-09-19 1989-03-23 Yaskawa Denki Seisakusho Kk Photosensor device
JPH04172260A (ja) * 1990-11-05 1992-06-19 Toyota Central Res & Dev Lab Inc 電磁界強度測定装置
JPH0574911A (ja) * 1991-09-13 1993-03-26 Nippon Telegr & Teleph Corp <Ntt> 集積回路の試験装置および試験方法
JPH0989961A (ja) * 1995-09-26 1997-04-04 Tokin Corp 電界検出装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120980A (fr) * 1974-03-11 1975-09-22
JPS59155764A (ja) * 1983-02-24 1984-09-04 Yokogawa Hokushin Electric Corp 光電圧計
JPS59218915A (ja) * 1983-05-27 1984-12-10 Yokogawa Hokushin Electric Corp 光導波路形センサ
JPS6237940A (ja) * 1985-08-12 1987-02-18 Nippon Denshi Zairyo Kk プロ−ブカ−ド
JPS6246268A (ja) * 1985-08-23 1987-02-28 Nippon Denshi Zairyo Kk プロ−ブカ−ド
JPS6478169A (en) * 1987-09-19 1989-03-23 Yaskawa Denki Seisakusho Kk Photosensor device
JPH04172260A (ja) * 1990-11-05 1992-06-19 Toyota Central Res & Dev Lab Inc 電磁界強度測定装置
JPH0574911A (ja) * 1991-09-13 1993-03-26 Nippon Telegr & Teleph Corp <Ntt> 集積回路の試験装置および試験方法
JPH0989961A (ja) * 1995-09-26 1997-04-04 Tokin Corp 電界検出装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104569544A (zh) * 2013-10-07 2015-04-29 姚晓天 法拉第电流传感器和法拉第温度传感器
US10281342B2 (en) 2013-10-07 2019-05-07 Xiaotian Steve Yao Faraday current and temperature sensors
US11333688B2 (en) 2016-02-16 2022-05-17 Xiaotian Steve Yao Reflective current and magnetic sensors based on optical sensing with integrated temperature sensing
US12111338B2 (en) 2016-02-16 2024-10-08 Xiaotian Steve Yao Reflective current and magnetic sensors based on optical sensing with integrated temperature sensing
CN109709384A (zh) * 2018-12-13 2019-05-03 北京航天时代光电科技有限公司 一种采用集成化光路结构的电流传感器
KR20220043433A (ko) * 2020-09-29 2022-04-05 엘아이지넥스원 주식회사 FET(Field Effect Transistor) 고장 검출 장치 및 방법
KR102451032B1 (ko) 2020-09-29 2022-10-05 엘아이지넥스원 주식회사 FET(Field Effect Transistor) 고장 검출 장치 및 방법

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KR20010006008A (ko) 2001-01-15
TW359753B (en) 1999-06-01
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DE19882306T1 (de) 2000-04-27
WO1999040446A8 (fr) 1999-12-16
GB9923232D0 (en) 1999-12-08

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