WO1999008328A9 - Integrierte elektrische schaltung mit kondensator - Google Patents
Integrierte elektrische schaltung mit kondensatorInfo
- Publication number
- WO1999008328A9 WO1999008328A9 PCT/DE1998/002231 DE9802231W WO9908328A9 WO 1999008328 A9 WO1999008328 A9 WO 1999008328A9 DE 9802231 W DE9802231 W DE 9802231W WO 9908328 A9 WO9908328 A9 WO 9908328A9
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- capacitor
- electrical circuit
- integrated electrical
- circuit according
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101100520151 Mus musculus Pirt gene Proteins 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
Definitions
- the invention relates to an integrated electrical circuit with at least one capacitor, the first capacitor plate consisting of a first electrically conductive layer and the second capacitor plate consisting of a second electrically conductive layer.
- An example of an integrated electrical circuit in which it is essential that the capacitors have a relative accuracy of less than 200 ppm is an analog-to-digital converter circuit. Such a high relative accuracy is necessary for a clear conversion from analog to digital signals or vice versa.
- the object of the invention is therefore to design a generic integrated electrical circuit in such a way that the absolute and / or relative accuracy of the capacitance of the capacitor or capacitors is as good as possible.
- Such a circuit should also be as simple as possible
- this object is achieved in that there is an insulation layer having at least one hole in a generic integrated electrical circuit between the capacitor plates, the bottom surface and at least part of the side surfaces of the hole being covered with an electrically conductive material, and in which there is at least one the first capacitor plate is in contact with another layer of a dielectric material.
- the invention therefore provides for an integrated electrical circuit in which contact is made between two conductive layers on the one hand at the locations provided for this purpose and on the other hand capacitors are formed in the surface areas provided with a dielectric layer. In the regions in which capacitors are formed, an insulation layer with holes and a further layer made of a dielectric material are arranged. One of the capacitor plates is in direct contact with this dielectric layer.
- the integrated electrical circuit such that the contact area between the first capacitor plate and the further layer occupies the entire surface of the first capacitor plate facing the second capacitor plate. This means that the first capacitor plate is completely in contact with the dielectric layer.
- CVD Chemical Vapor Deposition
- the producibility of the dielectric layer using one of the known methods of layer production has the advantage that a precisely defined, constant layer thickness can be achieved. With sufficient lateral expansion of the rather this applies because of the then existing planarity of their metal filling
- the dielectric layer In addition to the thickness of the dielectric layer, its lateral extent is another critical variable. If the areal dimension of the dielectric layer is smaller than that of the capacitor plate to which it lies, an undesirably large change in capacitance occurs.
- the dielectric layer and the electrically conductive layer forming the capacitor plate are not congruent with one another. It is therefore expedient for the further layer to have a slightly larger surface area than the capacitor plate on which it rests. In this case, even with a slight shift in the relative positions between the capacitor plate and the dielectric layer adjacent to it, the entire capacitor area is covered by the dielectric. Since protruding portions of the dielectric layer affect the capacitance only insignificantly, it is possible to ensure a precisely defined capacitance of the capacitor.
- the dielectric layer is removed outside the capacitor.
- the upper electrically conductive layer can simultaneously serve as a wiring level.
- the dielectric layer is removed at the locations where no capacitance is desired in order to make contact via the holes (plugs) filled with a conductive material. This enables a connection to the wiring level formed in the lower metal layer.
- a high dielectric constant (of the material used has the advantage that the required capacitance of the capacitor can be realized with a smaller capacitor area.
- the selection of the materials for the dielectric layer is very complex because a variety of requirements must be met at the same time.
- the layer material must also have the highest possible maximum field strength, good insulation properties and good manufacturability.
- the capacitance of the capacitor must remain constant over the entire range of the voltages used; this is a condition that can be easily met for microscopic capacitors Here it is much more difficult to fulfill, since there are considerably higher electric field strengths due to the small effective spacing of the capacitor plates.
- Nitride layers are particularly suitable for the construction of the dielectric layer in the circuits according to the invention. Silicon nitride Si3N4 may be mentioned here as an example.
- layer thicknesses of less than 35 nm can also be produced with a thickness less than 10 nm.
- the thickness of the layer should generally not be less than 2 nm. Such a lower limit is also necessary because otherwise fluctuations in the thickness of the layer from a few atomic layers have a large relative influence on the capacity.
- the drawing shows a partial cross section through a semiconductor structure.
- a structured lower metal layer 2 which consists for example of an aluminum alloy, is applied to an insulation layer, not shown. Between the metal layer 2 and the semiconductor substrate there may be further layers which are also not shown.
- the lower metal layer 2 is formed as an electrical connection level in surface areas of the circuit, not shown. It is thus possible to implement the contacting function and the lower capacitor plates solely through the metal layer 2. Above the metal layer 2 there is a 600 to 900 nm thick insulation layer 3, into which a large hole 5 and a small hole 6 have been etched. The holes 5 and 6 are filled over their entire surface with a conductive metal, preferably a tungsten alloy, with a significant depression occurring in the hole 5.
- a 20 nm thick dielectric layer 7 made of silicon nitride (Si3N4) is in direct contact with the insulation layer 3 and the metal fillings of the holes 5 and 6. The dielectric layer 7 is in contact with an upper metal layer 4 on its upper surface.
- the upper metal layer 4 can, for example, also consist of an aluminum alloy, like the lower metal layer 2. However, it can also be formed by a layer system, for example with the layer sequence Ti / TiN / AlSixCuy / TiN.
- the upper metal layer 4, like the lower metal layer 2 can be formed as an electrical connection level in other parts of the circuit. It is thus possible to use at least one of the two metal layers 2 and 4 several times. For this multiple use, it is only necessary to apply the dielectric layer 7 in selected surface areas. In this way, it is possible to provide capacitors for their manufacture by depositing only a single additional layer - this L ⁇ La to tsJ ⁇ * ⁇ *
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020007001145A KR20010022554A (ko) | 1997-08-04 | 1998-08-03 | 집적회로 |
EP98948718A EP1005705A1 (de) | 1997-08-04 | 1998-08-03 | Integrierte elektrische schaltung mit kondensator |
JP2000506687A JP2001526457A (ja) | 1997-08-04 | 1998-08-03 | 集積電気回路 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1997133736 DE19733736A1 (de) | 1997-08-04 | 1997-08-04 | Integrierte elektrische Schaltung |
DE19733736.8 | 1997-08-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999008328A1 WO1999008328A1 (de) | 1999-02-18 |
WO1999008328A9 true WO1999008328A9 (de) | 1999-05-06 |
Family
ID=7837984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1998/002231 WO1999008328A1 (de) | 1997-08-04 | 1998-08-03 | Integrierte elektrische schaltung mit kondensator |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1005705A1 (de) |
JP (1) | JP2001526457A (de) |
KR (1) | KR20010022554A (de) |
DE (1) | DE19733736A1 (de) |
WO (1) | WO1999008328A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19945939A1 (de) * | 1999-09-24 | 2001-04-12 | Infineon Technologies Ag | Integrierte Halbleiterschaltung mit Kondensatoren exakt vorgegebener Kapazität |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3377960D1 (en) * | 1982-06-30 | 1988-10-13 | Fujitsu Ltd | A field-effect semiconductor device |
US5210599A (en) * | 1988-09-30 | 1993-05-11 | Fujitsu Limited | Semiconductor device having a built-in capacitor and manufacturing method thereof |
JPH03104273A (ja) * | 1989-09-19 | 1991-05-01 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
US5036020A (en) * | 1990-08-31 | 1991-07-30 | Texas Instrument Incorporated | Method of fabricating microelectronic device incorporating capacitor having lowered topographical profile |
KR940005288B1 (ko) * | 1991-07-11 | 1994-06-15 | 금성일렉트론 주식회사 | 반도체 장치의 제조방법 |
US5397729A (en) * | 1992-06-15 | 1995-03-14 | Asahi Kasei Microsystems Co., Ltd. | Method for fabrication of semiconductor device having polycrystalline silicon and metal silicides |
US5576240A (en) * | 1994-12-09 | 1996-11-19 | Lucent Technologies Inc. | Method for making a metal to metal capacitor |
US5708559A (en) * | 1995-10-27 | 1998-01-13 | International Business Machines Corporation | Precision analog metal-metal capacitor |
US5926359A (en) * | 1996-04-01 | 1999-07-20 | International Business Machines Corporation | Metal-insulator-metal capacitor |
-
1997
- 1997-08-04 DE DE1997133736 patent/DE19733736A1/de not_active Ceased
-
1998
- 1998-08-03 JP JP2000506687A patent/JP2001526457A/ja active Pending
- 1998-08-03 EP EP98948718A patent/EP1005705A1/de not_active Ceased
- 1998-08-03 KR KR1020007001145A patent/KR20010022554A/ko not_active Application Discontinuation
- 1998-08-03 WO PCT/DE1998/002231 patent/WO1999008328A1/de not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE19733736A1 (de) | 1999-02-25 |
JP2001526457A (ja) | 2001-12-18 |
WO1999008328A1 (de) | 1999-02-18 |
EP1005705A1 (de) | 2000-06-07 |
KR20010022554A (ko) | 2001-03-26 |
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