Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P70/00—Cleaning of wafers, substrates or parts of devices
  • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
  • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
  • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
  • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
  • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
  • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/60—Wet etching
  • H10P50/64—Wet etching of semiconductor materials
  • H10P50/642—Chemical etching

Definitions

• the present invention relates to an etching gas and a cleaning gas suitable for semiconductor manufacturing applications.
• Perfluorinated compounds such as CF 4 , C 2 F 6 , C 4 F 8 ( ⁇ .-fluoro ⁇ sig ⁇ f, tan) and SF 6 are used in large quantities in the semiconductor production process as cleaning gas for cleaning gas and plasma CVD. Used for These are long life stable compounds in the air, fried infrared absorbance is high, global warming potential than carbon dioxide gas, 6300-fold with CF 4, Ji 2? 6 12500 times, C 4 F e but 9100-fold, SF 6 is very large as 24900 times, the development of low alternative gas global warming potential has become an urgent issue.
• An object of the present invention is to provide an alternative gas which is suitable as an etching gas and a plasma CVD cleaning gas used in a semiconductor production process and has a small global warming effect.
• the present invention provides the following etching gas and cleaning gas.
• n and X each represent an integer of 1 to 5; m and y each represent an integer of 0 to 11 (however, m and y are not simultaneously 0); 1 and z each represent an integer of 0 to 11 (however, 1 and z are not simultaneously 0)];
• a represents an integer of 1 to 3.
• n, x, m, y, 1, and z are the same as above;
• a represents an integer of 1 to 3.
• the present invention relates to the following etching method and cleaning method.
• At least one gas selected from the group consisting of the fluorine-based compounds represented by the general formulas (1), (2) and (3) can be used.
• Preferred compounds among the fluorine compounds represented by the general formula (1) are HCF 20 CF 2 CF 3 , CF 3 OCF 2 CF 2 H, HCF 2 OCF 2 CF 2 H, CF 3 CF 2 OCFHCF 3 , CF 3 CF 2 Gases such as OCF 2 CF 2 H, CF 3 CFHCF 20 CH 3 , CF 3 CF 2 CF 2 OCFHCF 3 are also used, and these can be used alone or in combination of two. .
• the etching gas of the invention He, N e, A r , single gas such as H 2> N 2, O 2 , C Compound gases such as H 4 , C 2 H 6 and NH 3 may be mixed and used at an appropriate ratio.
• the etching method of the present invention is performed under various dry etching conditions such as plasma etching, reactive ion etching, and microphone mouth-wave etching.
• Examples of the film to be processed on the substrate processed by the etching method of the present invention include a Si film, a SiO 2 film, a Si 3 N 4 film, and a refractory metal silicite film.
• the etching gas of the present invention has high precision and high selectivity, and has reached a practical level as a substitute for CF "C 2 F 6 , C 4 F 8 , SF 6 which has been widely used as an etching gas in the past.
• the etching gas of the present invention has a sufficiently low global warming potential as compared with CF 4 , C 2 F 6 , C 4 F 8 and SF 6 .
• the gas of the general formulas (1) to (3) exemplified above as the etching gas or the gas specifically exemplified above. Regardless of which etching gas is used, the dimensional accuracy of the pattern is similarly high and the selectivity to the layer to be processed is high, so that it can be used without any practical problems.
• At least one kind of gas selected from the group consisting of the fluorine compounds represented by the above general formulas (1), (2) and (3) can be used.
• Preferred compounds among the fluorine compounds represented by the above general formula (1) are HCF 2 0 CF 2 CF 3 , CF3OCF2CF2H, HCF2OCF2CF2H.CF 3 C F2OC FHC F 3, CF 3 C F2OC F 2 CF 2 H, CF 3 Gases such as CFHCF 2 OCH 3 and CF 3 CF 2 CF 20 CFHCF 3 are also used for L and deviation, and these can be used alone or in combination of two. Monkey
• CF3COOCH2CF3, CF 3 CF 2 COOCH 2 CF 3, CF 3 CF 2 CF 2 C 0 OCH 2 CF 3 use gas such that both t, is, they can be used singly or in combination of two or more.
• Chamber cleaning gas of the present invention He, N e, A r , H 2, N 2, O 2 alone gas may be used in combination, such as.
• a known material such as stainless steel and A1 alloy may be used as a material of the chamber.
• the chamber cleaning gas of the present invention can quickly remove reaction by-products adhering to the chamber without damaging these materials used for the chamber.
• the chamber cleaning gas of the present invention is at a level that can be used sufficiently as a substitute for CF 4 , C 2 F 6 , and SF 6 conventionally used as a chamber cleaning gas. Moreover, the chamber cleaning gas of the present invention has a sufficiently low global warming potential as compared with CF 4 , C 2 F 6 and SF 6 .
• the object can be removed sufficiently and quickly, and the chamber can be used practically without damaging the chamber.

Landscapes

• Drying Of Semiconductors (AREA)
• Cleaning Or Drying Semiconductors (AREA)
• ing And Chemical Polishing (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=12219507

Family Applications (1)

Country Status (2)

Cited By (8)

Families Citing this family (13)

Citations (3)

• 1997
  • 1997-02-12 JP JP9027382A patent/JPH10223614A/ja active Pending
• 1998
  • 1998-02-05 WO PCT/JP1998/000496 patent/WO1998036449A1/ja not_active Ceased

Patent Citations (3)

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