JPH10223614A - エッチングガスおよびクリーニングガス - Google Patents

エッチングガスおよびクリーニングガス

Info

Publication number
JPH10223614A
JPH10223614A JP9027382A JP2738297A JPH10223614A JP H10223614 A JPH10223614 A JP H10223614A JP 9027382 A JP9027382 A JP 9027382A JP 2738297 A JP2738297 A JP 2738297A JP H10223614 A JPH10223614 A JP H10223614A
Authority
JP
Japan
Prior art keywords
gas
etching
film
general formula
integer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9027382A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10223614A5 (https=
Inventor
Mitsushi Itano
充司 板野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd filed Critical Daikin Industries Ltd
Priority to JP9027382A priority Critical patent/JPH10223614A/ja
Priority to PCT/JP1998/000496 priority patent/WO1998036449A1/ja
Publication of JPH10223614A publication Critical patent/JPH10223614A/ja
Publication of JPH10223614A5 publication Critical patent/JPH10223614A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Landscapes

  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP9027382A 1997-02-12 1997-02-12 エッチングガスおよびクリーニングガス Pending JPH10223614A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9027382A JPH10223614A (ja) 1997-02-12 1997-02-12 エッチングガスおよびクリーニングガス
PCT/JP1998/000496 WO1998036449A1 (fr) 1997-02-12 1998-02-05 Gaz d'attaque et de nettoyage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9027382A JPH10223614A (ja) 1997-02-12 1997-02-12 エッチングガスおよびクリーニングガス

Publications (2)

Publication Number Publication Date
JPH10223614A true JPH10223614A (ja) 1998-08-21
JPH10223614A5 JPH10223614A5 (https=) 2005-04-21

Family

ID=12219507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9027382A Pending JPH10223614A (ja) 1997-02-12 1997-02-12 エッチングガスおよびクリーニングガス

Country Status (2)

Country Link
JP (1) JPH10223614A (https=)
WO (1) WO1998036449A1 (https=)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787053B2 (en) 2000-09-11 2004-09-07 Asahi Glass Company, Limited Cleaning gases and etching gases
US6849194B2 (en) 2000-11-17 2005-02-01 Pcbu Services, Inc. Methods for preparing ethers, ether compositions, fluoroether fire extinguishing systems, mixtures and methods
US6893964B2 (en) 2001-03-14 2005-05-17 Tokyo Electron Limited Cleaning method for substrate treatment device and substrate treatment device
JP2010073935A (ja) * 2008-09-19 2010-04-02 Casio Computer Co Ltd シリコン化合物膜のドライエッチング方法
JP2010287907A (ja) * 2010-08-06 2010-12-24 Casio Computer Co Ltd シリコン化合物膜のドライエッチング方法
JP2011510501A (ja) * 2008-01-23 2011-03-31 ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツング 太陽電池の製造方法
WO2013015033A1 (ja) 2011-07-27 2013-01-31 セントラル硝子株式会社 ドライエッチング剤
JP2013508990A (ja) * 2009-10-26 2013-03-07 ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツング Ｔｆｔマトリックスを製造するためのエッチングプロセス
US8524112B2 (en) 2007-12-21 2013-09-03 Solvay Fluor Gmbh Process for the production of microelectromechanical systems
US9017571B2 (en) 2010-07-12 2015-04-28 Central Glass Company, Limited Dry etching agent and dry etching method
US9093388B2 (en) 2010-02-01 2015-07-28 Central Glass Company, Limited Dry etching agent and dry etching method using the same
AU2016204849B2 (en) * 2004-04-29 2018-06-07 Honeywell International, Inc. Compositions containing fluorine substituted olefins
KR20190124258A (ko) 2017-02-28 2019-11-04 샌트랄 글래스 컴퍼니 리미티드 드라이 에칭제, 드라이 에칭 방법 및 반도체 장치의 제조방법
US10607850B2 (en) 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
WO2024178258A1 (en) * 2023-02-24 2024-08-29 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Etching method using oxygen-containing hydrofluorocarbon
WO2024178284A1 (en) * 2023-02-24 2024-08-29 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Etching method using oxygen-containing hydrofluorocarbon

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6120697A (en) * 1997-12-31 2000-09-19 Alliedsignal Inc Method of etching using hydrofluorocarbon compounds
US6352081B1 (en) 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
JP3865113B2 (ja) * 2000-07-07 2007-01-10 三洋電機株式会社 クリーニングガス及びエッチングガス
WO2002021586A1 (en) * 2000-09-07 2002-03-14 Daikin Industries, Ltd. Dry etching gas and method for dry etching
TWI670768B (zh) * 2014-10-30 2019-09-01 日商日本瑞翁股份有限公司 電漿蝕刻方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04239723A (ja) * 1991-01-23 1992-08-27 Nec Corp 半導体装置の製造方法
JP3198538B2 (ja) * 1991-05-24 2001-08-13 ソニー株式会社 ドライエッチング方法
JP3115715B2 (ja) * 1992-11-12 2000-12-11 三菱電機株式会社 高誘電率を有する多元系酸化物膜のエッチング方法、高融点金属含有膜のエッチング方法および薄膜キャパシタ素子の製造方法

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787053B2 (en) 2000-09-11 2004-09-07 Asahi Glass Company, Limited Cleaning gases and etching gases
EP1318542A4 (en) * 2000-09-11 2006-10-25 Nat Inst Of Advanced Ind Scien CLEANING GASES AND AGING GASES
US6849194B2 (en) 2000-11-17 2005-02-01 Pcbu Services, Inc. Methods for preparing ethers, ether compositions, fluoroether fire extinguishing systems, mixtures and methods
US6893964B2 (en) 2001-03-14 2005-05-17 Tokyo Electron Limited Cleaning method for substrate treatment device and substrate treatment device
AU2016204849B2 (en) * 2004-04-29 2018-06-07 Honeywell International, Inc. Compositions containing fluorine substituted olefins
US8524112B2 (en) 2007-12-21 2013-09-03 Solvay Fluor Gmbh Process for the production of microelectromechanical systems
JP2011510501A (ja) * 2008-01-23 2011-03-31 ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツング 太陽電池の製造方法
US8394686B2 (en) 2008-09-19 2013-03-12 Casio Computer Co., Ltd. Dry etching method of silicon compound film
KR101153679B1 (ko) * 2008-09-19 2012-06-18 가시오게산키 가부시키가이샤 실리콘을 포함하는 막의 드라이 에칭방법
JP2010073935A (ja) * 2008-09-19 2010-04-02 Casio Computer Co Ltd シリコン化合物膜のドライエッチング方法
JP2013508990A (ja) * 2009-10-26 2013-03-07 ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツング Ｔｆｔマトリックスを製造するためのエッチングプロセス
US9230821B2 (en) 2010-02-01 2016-01-05 Central Glass Company, Limited Dry etching agent and dry etching method using the same
US9093388B2 (en) 2010-02-01 2015-07-28 Central Glass Company, Limited Dry etching agent and dry etching method using the same
US9017571B2 (en) 2010-07-12 2015-04-28 Central Glass Company, Limited Dry etching agent and dry etching method
JP2010287907A (ja) * 2010-08-06 2010-12-24 Casio Computer Co Ltd シリコン化合物膜のドライエッチング方法
WO2013015033A1 (ja) 2011-07-27 2013-01-31 セントラル硝子株式会社 ドライエッチング剤
US10607850B2 (en) 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
US11430663B2 (en) 2016-12-30 2022-08-30 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
KR20190124258A (ko) 2017-02-28 2019-11-04 샌트랄 글래스 컴퍼니 리미티드 드라이 에칭제, 드라이 에칭 방법 및 반도체 장치의 제조방법
US11566177B2 (en) 2017-02-28 2023-01-31 Central Glass Company, Limited Dry etching agent, dry etching method and method for producing semiconductor device
WO2024178258A1 (en) * 2023-02-24 2024-08-29 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Etching method using oxygen-containing hydrofluorocarbon
WO2024178284A1 (en) * 2023-02-24 2024-08-29 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Etching method using oxygen-containing hydrofluorocarbon
TWI892472B (zh) * 2023-02-24 2025-08-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 使用含氧氫氟烴之蝕刻方法

Also Published As

Publication number Publication date
WO1998036449A1 (fr) 1998-08-20

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