JPH10223614A5 - - Google Patents

Info

Publication number
JPH10223614A5
JPH10223614A5 JP1997027382A JP2738297A JPH10223614A5 JP H10223614 A5 JPH10223614 A5 JP H10223614A5 JP 1997027382 A JP1997027382 A JP 1997027382A JP 2738297 A JP2738297 A JP 2738297A JP H10223614 A5 JPH10223614 A5 JP H10223614A5
Authority
JP
Japan
Prior art keywords
gas
group
film
etching
chamber cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997027382A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10223614A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9027382A priority Critical patent/JPH10223614A/ja
Priority claimed from JP9027382A external-priority patent/JPH10223614A/ja
Priority to PCT/JP1998/000496 priority patent/WO1998036449A1/ja
Publication of JPH10223614A publication Critical patent/JPH10223614A/ja
Publication of JPH10223614A5 publication Critical patent/JPH10223614A5/ja
Pending legal-status Critical Current

Links

JP9027382A 1997-02-12 1997-02-12 エッチングガスおよびクリーニングガス Pending JPH10223614A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9027382A JPH10223614A (ja) 1997-02-12 1997-02-12 エッチングガスおよびクリーニングガス
PCT/JP1998/000496 WO1998036449A1 (fr) 1997-02-12 1998-02-05 Gaz d'attaque et de nettoyage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9027382A JPH10223614A (ja) 1997-02-12 1997-02-12 エッチングガスおよびクリーニングガス

Publications (2)

Publication Number Publication Date
JPH10223614A JPH10223614A (ja) 1998-08-21
JPH10223614A5 true JPH10223614A5 (https=) 2005-04-21

Family

ID=12219507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9027382A Pending JPH10223614A (ja) 1997-02-12 1997-02-12 エッチングガスおよびクリーニングガス

Country Status (2)

Country Link
JP (1) JPH10223614A (https=)
WO (1) WO1998036449A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6120697A (en) * 1997-12-31 2000-09-19 Alliedsignal Inc Method of etching using hydrofluorocarbon compounds
US6352081B1 (en) 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
JP3865113B2 (ja) * 2000-07-07 2007-01-10 三洋電機株式会社 クリーニングガス及びエッチングガス
WO2002021586A1 (en) * 2000-09-07 2002-03-14 Daikin Industries, Ltd. Dry etching gas and method for dry etching
JP4112198B2 (ja) * 2000-09-11 2008-07-02 財団法人地球環境産業技術研究機構 クリーニングガス及びエッチングガス、並びにチャンバークリーニング方法及びエッチング方法
US6849194B2 (en) 2000-11-17 2005-02-01 Pcbu Services, Inc. Methods for preparing ethers, ether compositions, fluoroether fire extinguishing systems, mixtures and methods
JP4754080B2 (ja) * 2001-03-14 2011-08-24 東京エレクトロン株式会社 基板処理装置のクリーニング方法及び基板処理装置
AU2013203627B2 (en) * 2004-04-29 2014-07-03 Honeywell International, Inc. Compositions containing fluorine substituted olefins
CN101925983A (zh) 2007-12-21 2010-12-22 苏威氟有限公司 用于生产微机电系统的方法
US10453986B2 (en) * 2008-01-23 2019-10-22 Solvay Fluor Gmbh Process for the manufacture of solar cells
JP4596287B2 (ja) * 2008-09-19 2010-12-08 カシオ計算機株式会社 シリコンを含む膜のドライエッチング方法
KR20120098751A (ko) * 2009-10-26 2012-09-05 솔베이 플루오르 게엠베하 Ｔｆｔ 매트릭스 제조를 위한 식각 공정
WO2011093263A1 (ja) 2010-02-01 2011-08-04 セントラル硝子株式会社 ドライエッチング剤及びそれを用いたドライエッチング方法
JP5434970B2 (ja) 2010-07-12 2014-03-05 セントラル硝子株式会社 ドライエッチング剤
JP5454411B2 (ja) * 2010-08-06 2014-03-26 カシオ計算機株式会社 シリコンを含む膜のドライエッチング方法
JP2013030531A (ja) 2011-07-27 2013-02-07 Central Glass Co Ltd ドライエッチング剤
TWI670768B (zh) * 2014-10-30 2019-09-01 日商日本瑞翁股份有限公司 電漿蝕刻方法
US10607850B2 (en) 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
WO2018159368A1 (ja) 2017-02-28 2018-09-07 セントラル硝子株式会社 ドライエッチング剤、ドライエッチング方法及び半導体装置の製造方法
US20240290628A1 (en) * 2023-02-24 2024-08-29 American Air Liquide, Inc. Etching method using oxygen-containing hydrofluorocarbon
US20240290627A1 (en) * 2023-02-24 2024-08-29 American Air Liquide, Inc. Etching method using oxygen-containing hydrofluorocarbon

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04239723A (ja) * 1991-01-23 1992-08-27 Nec Corp 半導体装置の製造方法
JP3198538B2 (ja) * 1991-05-24 2001-08-13 ソニー株式会社 ドライエッチング方法
JP3115715B2 (ja) * 1992-11-12 2000-12-11 三菱電機株式会社 高誘電率を有する多元系酸化物膜のエッチング方法、高融点金属含有膜のエッチング方法および薄膜キャパシタ素子の製造方法

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