WO1998014991A1 - Halbleiteranordnung mit einer schicht aus einem edelmetall und verfahren zum herstellen derselben - Google Patents
Halbleiteranordnung mit einer schicht aus einem edelmetall und verfahren zum herstellen derselben Download PDFInfo
- Publication number
- WO1998014991A1 WO1998014991A1 PCT/DE1997/002036 DE9702036W WO9814991A1 WO 1998014991 A1 WO1998014991 A1 WO 1998014991A1 DE 9702036 W DE9702036 W DE 9702036W WO 9814991 A1 WO9814991 A1 WO 9814991A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- substrate
- silicon nitride
- platinum
- dielectric
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000010970 precious metal Substances 0.000 title abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910000510 noble metal Inorganic materials 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 239000012300 argon atmosphere Substances 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000007767 bonding agent Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000002318 adhesion promoter Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- -1 platinum metals Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
Definitions
- the present invention relates to a semiconductor arrangement with a layer of a noble metal, in particular platinum metal, according to the preamble of claim 1 and a method for producing such a semiconductor arrangement.
- Platinum layers are widely used as electrodes and also as conductor tracks in semiconductor devices. Recently, this also applies to capacitors whose dielectric is ferroelectric or has a high dielectric constant in the order of 100 or greater than 100.
- adhesion promoters for thin platinum layers have so far been used.
- Such an additional adhesion promoter layer naturally means an additional effort, which, however, has so far been accepted without any problems, since it ensures secure adhesion between the thin platinum layer and the silicon dioxide substrate is considered mandatory.
- silicon nitride is therefore used as an adhesion promoter between a layer of a noble metal, in particular platinum metal, and a substrate.
- the substrate can consist of the silicon nitride itself. This means that the silicon nitride serves as a substrate and is also its own adhesion promoter. Ru, Os, Rh, Ir, Pd or Pt are used as platinum metals. However, the invention is also generally applicable to precious metals such as gold, silver and alloys thereof.
- a substrate bias of 100 to 1000 V, preferably 250 V is therefore applied between the silicon nitride substrate as the cathode and an anode arranged at a distance during the sputtering of, for example, platinum.
- a platinum layer produced under this condition shows a particularly excellent adhesion to the underlying silicon nitride substrate even without any adhesion promoter between the silicon nitride substrate and the platinum layer.
- This saving of an adhesion promoter Layer the process steps for producing a semiconductor arrangement, for example a DRAM or an FeRAM (ferroelectric RAM), can be considerably simplified.
- the use of the silicon nitride substrate is advantageous since, as is known, silicon nitride has been introduced in semiconductor technology for decades, so that there is a great deal of experience with its manufacture, handling and properties.
- a dielectric is additionally applied to the platinum layer, the adherence of the platinum layer to a silicon nitride substrate provided underneath is still sufficient, even in high-temperature processes of the order of 700 ° to 800 ° C.
- a platinum layer applied under prestress to a silicon nitride substrate can be used even with capacitors with a ferroelectric dielectric or a dielectric with a high dielectric constant, even if these capacitors have to be produced at high temperatures.
- (Ba, Sr) Ti0 2 or SrBi 2 Ta 2 0 9 or SrBi 2 (Ta, Nb) 2 0 9 or perovskite-like para- or ferroelectric layers can be used as the dielectric.
- a high frequency power of 300 W is used for 5 minutes in an argon atmosphere at a pressure of 0.66 Pa (5 mTorr).
- the substrate bias is 250 V. This enables a well-adhering platinum layer with a layer thickness of approximately 40 nm to be produced on a silicon nitride substrate with a layer thickness of approximately 550 nm.
- Fig. 1 shows schematically a reactor for performing the method according to the invention and Fig. 2 shows the construction of a capacitor in a DRAM or FeRAM.
- one or more silicon wafers 3 are located on a cathode 2 serving as a base, on the upper sides of which silicon nitride layers 4 are provided.
- An anode 5 is arranged opposite the cathode 2 as a sputtering target, from which a noble metal, such as Pt in particular, is sputtered by applying a bias voltage between the anode 5 and the cathode 2.
- a ring 8 can also be used to apply the voltage.
- a platinum layer 6 is then each applied to the silicon nitride layers 4 by sputtering.
- the sputtering takes place at a high-frequency power of 300 W in an argon atmosphere with a pressure of about 0.66 Pa (5 mTorr).
- the platinum layers 6 reach a layer thickness of approximately 40 nm over a period of 5 minutes.
- a dielectric is also applied to the platinum layer 6, such as (Ba, Sr) Ti0 3 or SrBi 2 Ta 2 0 9 , - or SrBi 2 (Ta, Nb) 2 0 9 or a perovskite-like para- or ferro-electric layer
- the adhesion of the underlying platinum layer 6 to the silicon nitride layer 4 becomes especially high at temperatures between 500 ° and 800 ° C and in particular between 700 ° and 800 ° C further improved.
- the method according to the invention is therefore also outstandingly suitable for producing capacitors whose dielectric is ferroelectric or has a high dielectric constant of the order of 50 to 100 or more.
- Such a dielectric 7 is shown schematically in broken lines in the figure.
- the invention thus makes it possible in a simple manner to produce platinum layers which are distinguished by a high level of adhesion to underlying silicon nitride layers.
- a platinum metal e.g. Ru, Os, Rh, Ir or Pd can be used.
- noble metals can also be used in general.
- the capacitor 9 has an upper platinum layer 10, a dielectric 11 made of (Ba, Sr) Ti0 3 (BST) or SrBi 2 Ta 2 0 9 (SBT), for example, and a lower platinum layer 12.
- BST BST
- SrBi 2 (Ta, Nb) 2 0 9 or a perovskite-like para- or ferroelectric layer can also be used.
- the lower platinum layer 12 is located on a silicon nitride layer 13 and is applied thereto, for example with the aid of the reactor 1. The platinum layer 12 therefore adheres very well to the silicon nitride layer 13.
- the silicon nitride layer 13 is located on a silicon substrate 14 with a transistor structure 15 and contains bit and word lines 16.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97943753A EP0931334A1 (de) | 1996-09-30 | 1997-09-11 | Halbleiteranordnung mit einer schicht aus einem edelmetall und verfahren zum herstellen derselben |
JP10516110A JP2001501374A (ja) | 1996-09-30 | 1997-09-11 | 貴金属からなる層を有する半導体装置及びその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19640240A DE19640240A1 (de) | 1996-09-30 | 1996-09-30 | Halbleiteranordnung mit einer Schicht aus einem Edelmetall und Verfahren zum Herstellen derselben |
DE19640240.9 | 1996-09-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998014991A1 true WO1998014991A1 (de) | 1998-04-09 |
Family
ID=7807400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1997/002036 WO1998014991A1 (de) | 1996-09-30 | 1997-09-11 | Halbleiteranordnung mit einer schicht aus einem edelmetall und verfahren zum herstellen derselben |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0931334A1 (de) |
JP (1) | JP2001501374A (de) |
KR (1) | KR20000029581A (de) |
CN (1) | CN1226999A (de) |
DE (1) | DE19640240A1 (de) |
TW (1) | TW398027B (de) |
WO (1) | WO1998014991A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW437010B (en) | 1998-09-08 | 2001-05-28 | Siemens Ag | A layer-arrangement with a material-layer and a diffusion-barrier against diffusable material-components |
DE19845033A1 (de) * | 1998-09-30 | 2000-04-20 | Siemens Ag | Halbleiterbauelement |
JP4539844B2 (ja) * | 2004-04-15 | 2010-09-08 | セイコーエプソン株式会社 | 誘電体キャパシタおよびその製造方法ならびに半導体装置 |
DE102009019524B4 (de) | 2009-04-30 | 2023-07-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4129848A (en) * | 1975-09-03 | 1978-12-12 | Raytheon Company | Platinum film resistor device |
US4507851A (en) * | 1982-04-30 | 1985-04-02 | Texas Instruments Incorporated | Process for forming an electrical interconnection system on a semiconductor |
EP0273550A1 (de) * | 1986-12-04 | 1988-07-06 | Machine Technology Inc. | Verfahren und Vorrichtung zur Ablagerung und Oberflächenglättung |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL9000602A (nl) * | 1990-03-16 | 1991-10-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met geheugenelementen vormende condensatoren met een ferroelectrisch dielectricum. |
JP3131982B2 (ja) * | 1990-08-21 | 2001-02-05 | セイコーエプソン株式会社 | 半導体装置、半導体メモリ及び半導体装置の製造方法 |
JP3407409B2 (ja) * | 1994-07-27 | 2003-05-19 | 富士通株式会社 | 高誘電率薄膜の製造方法 |
US5573979A (en) * | 1995-02-13 | 1996-11-12 | Texas Instruments Incorporated | Sloped storage node for a 3-D dram cell structure |
-
1996
- 1996-09-30 DE DE19640240A patent/DE19640240A1/de not_active Ceased
-
1997
- 1997-09-11 KR KR1019997000642A patent/KR20000029581A/ko not_active Application Discontinuation
- 1997-09-11 JP JP10516110A patent/JP2001501374A/ja active Pending
- 1997-09-11 TW TW086113182A patent/TW398027B/zh not_active IP Right Cessation
- 1997-09-11 EP EP97943753A patent/EP0931334A1/de not_active Ceased
- 1997-09-11 CN CN97196961A patent/CN1226999A/zh active Pending
- 1997-09-11 WO PCT/DE1997/002036 patent/WO1998014991A1/de not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4129848A (en) * | 1975-09-03 | 1978-12-12 | Raytheon Company | Platinum film resistor device |
US4507851A (en) * | 1982-04-30 | 1985-04-02 | Texas Instruments Incorporated | Process for forming an electrical interconnection system on a semiconductor |
EP0273550A1 (de) * | 1986-12-04 | 1988-07-06 | Machine Technology Inc. | Verfahren und Vorrichtung zur Ablagerung und Oberflächenglättung |
Also Published As
Publication number | Publication date |
---|---|
CN1226999A (zh) | 1999-08-25 |
KR20000029581A (ko) | 2000-05-25 |
DE19640240A1 (de) | 1998-04-02 |
JP2001501374A (ja) | 2001-01-30 |
TW398027B (en) | 2000-07-11 |
EP0931334A1 (de) | 1999-07-28 |
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