WO1995009435A1 - Verfahren zum herstellen mikrokristalliner schichten und deren verwendung - Google Patents
Verfahren zum herstellen mikrokristalliner schichten und deren verwendung Download PDFInfo
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- WO1995009435A1 WO1995009435A1 PCT/DE1994/001158 DE9401158W WO9509435A1 WO 1995009435 A1 WO1995009435 A1 WO 1995009435A1 DE 9401158 W DE9401158 W DE 9401158W WO 9509435 A1 WO9509435 A1 WO 9509435A1
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- Prior art keywords
- hydrogen
- cvd
- microcrystalline
- reactor
- layers
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- 238000000034 method Methods 0.000 title claims abstract description 109
- 230000008569 process Effects 0.000 title claims abstract description 61
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 57
- 239000001257 hydrogen Substances 0.000 claims abstract description 56
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000007789 gas Substances 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 125000004122 cyclic group Chemical group 0.000 claims abstract description 6
- 229910052718 tin Inorganic materials 0.000 claims abstract description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract 2
- 229910045601 alloy Inorganic materials 0.000 claims abstract 2
- 239000000956 alloy Substances 0.000 claims abstract 2
- 239000010703 silicon Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 3
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 22
- 230000008021 deposition Effects 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000004020 luminiscence type Methods 0.000 description 11
- 238000005401 electroluminescence Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000001237 Raman spectrum Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- -1 GaAs compound Chemical class 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02518—Deposited layers
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- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only AIVBIV alloys, e.g. SiGe
- H01L31/1816—Special manufacturing methods for microcrystalline layers, e.g. uc-SiGe, uc-SiC
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- H01L33/0054—Processes for devices with an active region comprising only group IV elements
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- H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
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Definitions
- the invention relates to a process for the production of microcrystalline layers from elements of the IV main group of the periodic table, such as silicon, germane or tin, and a process for the production of luminescent silicon structures, solar cells and transistors.
- the invention further relates to the layers or products produced using these methods.
- Microcrystalline layers in particular made of silicon, are becoming increasingly important because of their optical and electronic properties and because of the possibility of depositing the layers at low temperatures (200 to 300 ° C.). Preferred areas of application of such layers are solar cells, thin-film transistors as well as LEDs.
- the most common method for the deposition of microcrystalline silicon ( ⁇ c-Si) is the CVD method.
- the layers are produced using SiH 4 in hydrogen as the process gas. SiH 4 is in a highly diluted form
- Hydrogen (less than 5 vol.%) Applied (T. Hamasaki, H. Kurata, M. Hirose, U. Osaka, Appl. Phys. Lett. 37 (1980) 1084).
- the low-temperature formation of the crystalline phase can be understood as a balance between the silicon deposition and the removal of the areas with disordered Si-Si bonds by the atomic hydrogen. This process is referred to as hydrogen etching (C.C. Tsai, G.B. Anderson, R. Thompson, B. Wacker, J. Non-Cryst. Sol. 114 (1989) 151).
- a problem with this conventional PE-CVD is that the growth of the ordered microcrystalline Si layer requires mild plasma conditions, whereas the production of the necessary atomic hydrogen for the hydrogen etching requires a high pressure and a high power of the hydrogen plasma .
- Another problem is that the deposition rate is very low at 5 to 10 ⁇ / min.
- microcrystalline produced in this way Layers are particularly characterized in that the microcrystalline layer has a crystallite content of 20 to 95%, so-called element dots, ie spatially limited crystallites, being formed.
- the hydrogen treatment is carried out in such a way that after the amorphous layer has been deposited with process gases known per se and under customary conditions, the process gas stream and the hydrogen flow and the connection of the CVD reactor to the pump are at least temporarily interrupted.
- the hydrogen treatment is carried out with the amount of hydrogen still in the reactor.
- the procedure is preferably such that the hydrogen flow is switched off with a time delay, so that there is an increased proportion of hydrogen in the reactor. Because the hydrogen is present in the closed system, the conversion of the amorphous layer to the microcrystalline layer is favored.
- the decomposition of SiH 4 in strong hydrogen dilution in plasma is a reversible process, which can be expressed by the following relationship:
- the silicon atoms are etched away from the amorphous solid silicon phase by the hydrogen atoms, and SiH n radicals are formed. Since the attack of the hydrogen atoms takes place at preferred locations on the amorphous silicon layer, corresponding microcrystalline layers also form at preferred locations.
- the process gas stream and the hydrogen stream and the connection to the vacuum pump are not interrupted at the same time, but rather that the hydrogen stream can flow into the reactor for a short time, at most until an increase in pressure in the reactor until about 1 atmosphere takes place.
- the process offers the further advantage that the crystallite content can be controlled individually by the duration of the hydrogen treatment.
- the crystallite content that can be achieved with the process according to the invention is a maximum of 95%.
- the crystallite size can also be set by selecting the process parameters.
- the process described above is called the CC-CVD process.
- the cyclic CC-CVD process accordingly consists of a repeatable cycle, each cycle consisting of two steps, namely a) the deposition of a thin amorphous silicon layer and b) hydrogen treatment in a closed CVD process, such as described above.
- the method presented can in principle be carried out using all common CVD methods. These include ECR-CVD, VHF-CVD and hot wire CVD processes. It is also possible to use different CVD processes for the individual steps of each cycle.
- the method according to the invention is carried out with silicon as element and SiH 4 and hydrogen as process gases.
- the method described above is particularly suitable for producing luminescent element structures, in particular for producing luminescent Si structures.
- Luminescence is the emission of light in the visible range, in the UV and IR spectral range, among others. of solids after energy supply.
- the luminescence is due to a transition from an electron from an energetically higher state to an unoccupied energetically lower state. Since unoccupied electron states are often treated as positively charged "holes", the luminescence can also be described as a recombination of a pair of electron holes in which the energy released is at least partially released in the form of a light quantum (photons).
- the luminescence processes can be based on the type of energy supply in photoluminescence (optical excitation) and classify electroluminescence (application of a voltage by an electric field).
- the phenomenon of luminescence is of particular interest in the semiconducting materials, since it enables various applications in microelectronics.
- Typical materials with such a direct band transition are, for example, GaAs compound semiconductors.
- silicon is a semiconductor material with an indirect band transition. It was therefore to be expected that silicon would not be available for electroluminescence applications.
- various methods and processes have become known which make it possible to produce an electroluminescent Si structure.
- Either the microcrystalline layers produced as described above are subjected to a wet-chemical etching process known per se, or the element dots are passivated under closed-char er conditions.
- the variant of the method according to the invention for processing the microcrystalline layers described under closed-chamber conditions has proven to be favorable. It is advantageous here that several of these layers can be produced one above the other (multi-layers), so that electroluminescence can be achieved with a very high efficiency.
- a further improvement can be achieved by using insulator layers, e.g. from a-SiC: H or a-SiN: H, as an initiating contact. The charge carriers get into the active layer (AL) through tunnels and reach them with very high energy. This results in a further increase in efficiency.
- a further improvement in the yield is achieved by repeating the active layers (AL) and insulating layers (IL).
- the method of microcrystalline layers described at the outset is also particularly suitable for producing solar cells and for producing high-performance thin-film transistors. Further features, details and advantages of the invention result from the following description of a method example of the invention and from the drawings. Show it:
- FIG. 1 schematically shows the CVD reactor both in the first and in the second process step and the associated process parameters
- FIG. 2 shows schematically the formation of the microcrystalline layer for two selected areas during the process
- FIG. 3 shows a Raman Spectrum for two different samples
- FIG. 4 the conductivity of the layer produced according to the invention
- FIG. 5 the deposition rate
- FIG. 1 schematically shows the state of the reaction chamber of a CVD reactor for the two process steps in the upper part of the double graphic.
- the example concerns the deposition of silicon using SiH 4 as process gas and hydrogen.
- the reactor 1 is provided with an inlet 2 for the process gas, here SiH 4 , and a separate inlet 3 for the hydrogen.
- the reactor 1 is connected via the outlet 5 to a pump (not shown).
- the first step ie the deposition of an amorphous SiH layer, is carried out under conditions known per se with the known process gases SiH 4 and hydrogen.
- Output 5 to the pump is open, so that the deposition on the substrate 6 is carried out in gas flow (in s).
- the pressure in mbar can be seen on the ordinate.
- the conditions for depositing the a-Si: H layer were as follows:
- the deposition rate was 2.5 ⁇ / s under these conditions.
- a time period of 35 s was selected for the time period (T d ).
- T d is approximately 5 s. This makes it possible to produce 12.4 ⁇ thick a-Si: H layers in every cycle.
- the second step of the cycle for producing the microcrystalline layers is essential to the invention.
- the output 5 of the pump and the feeds 2 and 3 for the process gas stream and the hydrogen are closed for a certain period of time T H.
- the procedure was such that the interruption of the hydrogen flow (switching point B) was carried out after the interruption of the process gas flow and the closing of the outlet to the pump (switching point A). It is thereby achieved that the pressure in the reactor rises as a result of the inflowing hydrogen, so that the hydrogen treatment is carried out with an increased proportion of hydrogen, which enables acceleration of the second process step.
- the curve C within the time interval T H gives the pressure curve again, as it is in CC hydrogen treatment.
- D represents the course as it occurs when the plasma is switched off or when the process is open, ie in the process known from the prior art.
- E shows the course for the CC process according to the invention
- F shows the course for the "open process" known from the prior art.
- the SiH 4 concentration at the beginning of the second step, ie during the hydrogen treatment is zero (curve F).
- the hydrogen treatment accordingly takes place in a pure hydrogen atmosphere.
- the hydrogen treatment in the CC-CVD process takes place in the presence of SiH 4 molecules. This fact obviously has a positive effect on the deposition rate.
- T H means the duration of the hydrogen treatment
- ⁇ d the layer thickness per cycle
- R the deposition rate
- d the total film thickness
- ⁇ d the dark
- ⁇ ph the photoconductivity
- E act the activation energy.
- FIG. 2 shows schematically the formation of the microcrystalline layer, starting from the amorphous layer (a) to the microcrystalline layer (b).
- An amorphous SiH layer is formed by the first process step of the cycle.
- This amorphous SiH layer contains partially ordered districts (see arrow).
- the microcrystalline layer forms - starting from the partially ordered areas shown in (a) - this process can be explained in such a way that it takes place in two stages.
- a first stage is called “nucleation” and a second stage is called “recrystallization”.
- G and S symbolize the silicon atoms in the gas phase (G) and the SiH species (S).
- FIG. 3 shows in comparison the Raman spectra of two samples which were produced by the method according to the invention.
- the Raman spectrum shows a curve A of sample C 409 that lasts 15 seconds and a curve B (sample C 407) that has been treated with H 2 for 90 seconds and a curve c of sample 0408. It can be seen from this that the method according to the invention is very flexible with regard to the formation of crystallinity. The Raman intensity is canceled on the ordinate.
- FIG. 4 shows the increase in conductivity (in s / cm) with the progress of the hydrogen treatment in s. This is particularly advantageous for microcrystalline TFTs.
- FIG. 5 shows how the deposition rate (rpm) of the method according to the invention (symbolized by filled triangles) differs from the open process (filled quadrilaterals). For completeness, the hydrogen dilution is included in this graphic. The activation energy is plotted on the abscissa.
- microcrystalline layers produced by the process according to the invention are clearly superior to the prior art. These layers open up possible applications for luminescence applications as well as for transistors or solar cells.
- Fig. 6 (a) shows the structure of a pn diode.
- a substrate preferably glass or other at least partially transparent substrates, is provided with a contact electrode layer.
- Such a substrate is made using the method described above
- the CC-CVD process provided with a microcrystalline layer.
- the procedure according to the invention is such that at least one cycle, but preferably 2 to 2000 cycles, are carried out so that a sufficiently thick layer is achieved.
- the microcrystalline layer is produced by means of the CC-CVD process, it is no longer necessary, as previously known from the prior art, to form the microcrystalline layer for luminescence applications from Si wafers in such a way that the Surface of a wa- is treated.
- the microcrystalline layer thus produced is preferably passivated in a further process step using the CC-CVD process. The passivation can also take place in a "normal", ie open CVD process.
- a cycle therefore consists of three steps, namely formation of the amorphous SiH layer, generation of the microcrystalline layer and passivation.
- the procedure here is that the microcrystalline layers are treated with either an oxidizing or a nitriding gas. As a result, so-called active layers (AL) are formed.
- an active layer produced in this way is again provided with a contact electrode layer on the surface.
- the contact electrode layer is N-conductive with a metal contact.
- the contact electrode layer applied to the substrate in the example according to FIG. 6 (a) consists of ITO (indium tin oxide). Electroluminescence was observed when DC voltage was applied to such a pn diode.
- FIG. 6 (b) An improvement in the efficiency of the electroluminescence can be achieved (FIG. 6 (b)) by applying insulation layers.
- Fig. 6 (b) shows an example of the setup of such an electroluminescent application.
- an indium-tin oxide contact electrode is applied as shown in FIG. 6 (a).
- the active layer AL is surrounded by two insulation layers IL.
- the thickness of such a layer is in the range from 20 to 500 ⁇ .
- Such an insulator layer can consist, for example, of amorphous SiC: H or amorphous SiN: H. If an alternating voltage is applied, the charge carriers enter the active layer through tunnels and reach them with high energy.
- Important parameters for this ac operation are a voltage (determined by the thickness and composition of the insulator layer) and b frequency (determined by the transport properties and the density of states of the active material).
- the electroluminescence with such a structure shows a significantly better efficiency than the pn-Diode according to FIG. 6 (a).
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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EP94928282A EP0721656A1 (de) | 1993-09-30 | 1994-09-29 | Verfahren zum herstellen mikrokristalliner schichten und deren verwendung |
JP7510063A JPH09508236A (ja) | 1993-09-30 | 1994-09-29 | 微結晶層を製造する方法、および、それら微結晶層の利用 |
US08/624,403 US5851904A (en) | 1993-09-30 | 1994-09-29 | Method of manufacturing microcrystalline layers and their utilization |
Applications Claiming Priority (2)
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DEP4333416.4 | 1993-09-30 | ||
DE4333416A DE4333416C2 (de) | 1993-09-30 | 1993-09-30 | Verfahren zur Herstellung von mikrokristallinen Schichten und deren Verwendung |
Publications (1)
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WO1995009435A1 true WO1995009435A1 (de) | 1995-04-06 |
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PCT/DE1994/001158 WO1995009435A1 (de) | 1993-09-30 | 1994-09-29 | Verfahren zum herstellen mikrokristalliner schichten und deren verwendung |
PCT/DE1994/001168 WO1995009443A1 (de) | 1993-09-30 | 1994-09-30 | Verfahren zum herstellen von lumineszenten elementstrukturen |
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PCT/DE1994/001168 WO1995009443A1 (de) | 1993-09-30 | 1994-09-30 | Verfahren zum herstellen von lumineszenten elementstrukturen |
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US (1) | US5851904A (de) |
EP (1) | EP0721656A1 (de) |
JP (1) | JPH09508236A (de) |
DE (1) | DE4345229C2 (de) |
WO (2) | WO1995009435A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE19711268B4 (de) * | 1996-03-18 | 2004-09-16 | Boe-Hydis Technology Co., Ltd. | Chemisches Dampfabscheidungsverfahren mit induktiv gekoppeltem Plasma, Verwendung des Verfahrens zum Herstellen von Dünnschichttransistoren und durch das Verfahren hergestellte Dünnschichten aus amorphen Silizium |
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US6303945B1 (en) | 1998-03-16 | 2001-10-16 | Canon Kabushiki Kaisha | Semiconductor element having microcrystalline semiconductor material |
FR2812763B1 (fr) * | 2000-08-04 | 2002-11-01 | St Microelectronics Sa | Formation de boites quantiques |
US7122736B2 (en) * | 2001-08-16 | 2006-10-17 | Midwest Research Institute | Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique |
JP2003298077A (ja) * | 2002-03-29 | 2003-10-17 | Ebara Corp | 太陽電池 |
US7273818B2 (en) * | 2003-10-20 | 2007-09-25 | Tokyo Electron Limited | Film formation method and apparatus for semiconductor process |
TW200905730A (en) * | 2007-07-23 | 2009-02-01 | Ind Tech Res Inst | Method for forming a microcrystalline silicon film |
WO2009145068A1 (ja) | 2008-05-26 | 2009-12-03 | 三菱電機株式会社 | 薄膜形成装置および半導体膜製造方法 |
GB2549951B (en) * | 2016-05-03 | 2019-11-20 | Metodiev Lavchiev Ventsislav | Light emitting structures and systems on the basis of group-IV material(s) for the ultra violet and visible spectral range |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0526779A1 (de) * | 1991-08-05 | 1993-02-10 | International Business Machines Corporation | Plasmaunterstützte Gasphasenabscheidung von Silizium mit gepulster Gas-Einspeisung |
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JPS5871589A (ja) * | 1981-10-22 | 1983-04-28 | シャープ株式会社 | 薄膜el素子 |
JPS59181683A (ja) * | 1983-03-31 | 1984-10-16 | Hiroshi Kukimoto | 発光素子 |
NL8501769A (nl) * | 1984-10-02 | 1986-05-01 | Imec Interuniversitair Micro E | Bipolaire heterojunctie-transistor en werkwijze voor de vervaardiging daarvan. |
US4920387A (en) * | 1985-08-26 | 1990-04-24 | Canon Kabushiki Kaisha | Light emitting device |
US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
DE4042389C2 (de) * | 1989-06-23 | 1993-10-21 | Sharp Kk | Dünnfilm-Elektrolumineszenzvorrichtung |
JP2880322B2 (ja) * | 1991-05-24 | 1999-04-05 | キヤノン株式会社 | 堆積膜の形成方法 |
DE4126955C2 (de) * | 1991-08-14 | 1994-05-05 | Fraunhofer Ges Forschung | Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen |
US5206523A (en) * | 1991-08-29 | 1993-04-27 | Goesele Ulrich M | Microporous crystalline silicon of increased band-gap for semiconductor applications |
JPH06326024A (ja) * | 1993-05-10 | 1994-11-25 | Canon Inc | 半導体基板の製造方法及び非晶質堆積膜の形成方法 |
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1993
- 1993-09-30 DE DE4345229A patent/DE4345229C2/de not_active Expired - Fee Related
-
1994
- 1994-09-29 EP EP94928282A patent/EP0721656A1/de not_active Withdrawn
- 1994-09-29 JP JP7510063A patent/JPH09508236A/ja active Pending
- 1994-09-29 WO PCT/DE1994/001158 patent/WO1995009435A1/de not_active Application Discontinuation
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EP0526779A1 (de) * | 1991-08-05 | 1993-02-10 | International Business Machines Corporation | Plasmaunterstützte Gasphasenabscheidung von Silizium mit gepulster Gas-Einspeisung |
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A. ASANO: "Effects of hydrogen atoms on the network structure of hydrogenated amorphous and microcrystalline silicon thin films", APPLIED PHYSICS LETTERS., vol. 56, no. 6, 5 February 1990 (1990-02-05), NEW YORK US, pages 533 - 535 * |
A.ASANO ET AL.: "Preparation of highly photoconductive hydrogenated amorphous silicon carbide films with a multiplasma-zone apparatus", JOURNAL OF APPLIED PHYSICS, vol. 65, no. 6, 15 March 1989 (1989-03-15), NEW YORK US, pages 2439 - 2444 * |
M. OTOBE ET AL.: "Growth mechanism of microcrystalline silicon prepared by alternating deposition of amorphous silicon and hydrogen radical annealing", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2, vol. 31, no. 10A, 1 October 1992 (1992-10-01), TOKYO JP, pages L1388 - L1391 * |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE19711268B4 (de) * | 1996-03-18 | 2004-09-16 | Boe-Hydis Technology Co., Ltd. | Chemisches Dampfabscheidungsverfahren mit induktiv gekoppeltem Plasma, Verwendung des Verfahrens zum Herstellen von Dünnschichttransistoren und durch das Verfahren hergestellte Dünnschichten aus amorphen Silizium |
Also Published As
Publication number | Publication date |
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DE4345229C2 (de) | 1998-04-09 |
DE4345229A1 (de) | 1995-04-06 |
US5851904A (en) | 1998-12-22 |
WO1995009443A1 (de) | 1995-04-06 |
EP0721656A1 (de) | 1996-07-17 |
JPH09508236A (ja) | 1997-08-19 |
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